WO2008081943A1 - 研磨液組成物 - Google Patents
研磨液組成物 Download PDFInfo
- Publication number
- WO2008081943A1 WO2008081943A1 PCT/JP2007/075309 JP2007075309W WO2008081943A1 WO 2008081943 A1 WO2008081943 A1 WO 2008081943A1 JP 2007075309 W JP2007075309 W JP 2007075309W WO 2008081943 A1 WO2008081943 A1 WO 2008081943A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- peak
- range
- diffraction angle
- liquid composition
- polishing liquid
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title abstract 2
- 239000000203 mixture Substances 0.000 title abstract 2
- 238000005498 polishing Methods 0.000 title abstract 2
- 239000002131 composite material Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract 1
- 239000012736 aqueous medium Substances 0.000 abstract 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002270 dispersing agent Substances 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 238000000634 powder X-ray diffraction Methods 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/241—Methods
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/50—Solid solutions
- C01P2002/52—Solid solutions containing elements as dopants
- C01P2002/54—Solid solutions containing elements as dopants one element only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geology (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007800479599A CN101568615B (zh) | 2006-12-28 | 2007-12-28 | 研磨液组合物 |
EP07860512A EP2107093B1 (en) | 2006-12-28 | 2007-12-28 | Polishing liquid composition |
US12/520,747 US8357311B2 (en) | 2006-12-28 | 2007-12-28 | Polishing liquid composition |
KR1020097012348A KR101388956B1 (ko) | 2006-12-28 | 2007-12-28 | 연마액 조성물 |
US13/717,589 US8617994B2 (en) | 2006-12-28 | 2012-12-17 | Polishing liquid composition |
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006356517 | 2006-12-28 | ||
JP2006-356517 | 2006-12-28 | ||
JP2007099866 | 2007-04-05 | ||
JP2007-099866 | 2007-04-05 | ||
JP2007113445 | 2007-04-23 | ||
JP2007-113445 | 2007-04-23 | ||
JP2007139661 | 2007-05-25 | ||
JP2007-139661 | 2007-05-25 | ||
JP2007-141356 | 2007-05-29 | ||
JP2007141356 | 2007-05-29 | ||
JP2007-324025 | 2007-12-14 | ||
JP2007324025A JP5248096B2 (ja) | 2006-12-28 | 2007-12-14 | 研磨液組成物 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/520,747 A-371-Of-International US8357311B2 (en) | 2006-12-28 | 2007-12-28 | Polishing liquid composition |
US13/717,589 Division US8617994B2 (en) | 2006-12-28 | 2012-12-17 | Polishing liquid composition |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081943A1 true WO2008081943A1 (ja) | 2008-07-10 |
Family
ID=41036787
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/075309 WO2008081943A1 (ja) | 2006-12-28 | 2007-12-28 | 研磨液組成物 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8357311B2 (ja) |
EP (1) | EP2107093B1 (ja) |
KR (1) | KR101388956B1 (ja) |
CN (1) | CN101568615B (ja) |
TW (1) | TWI441905B (ja) |
WO (1) | WO2008081943A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010016063A (ja) * | 2008-07-01 | 2010-01-21 | Kao Corp | 研磨液組成物 |
JP2010016064A (ja) * | 2008-07-01 | 2010-01-21 | Kao Corp | 研磨液組成物 |
WO2011132665A1 (ja) * | 2010-04-20 | 2011-10-27 | 花王株式会社 | ハードディスク用アルミノシリケートガラス基板の製造方法 |
JP2013527985A (ja) * | 2010-04-16 | 2013-07-04 | キャボット マイクロエレクトロニクス コーポレイション | バルクシリコンの研磨組成物及び研磨方法 |
WO2015136832A1 (ja) * | 2014-03-11 | 2015-09-17 | 信越化学工業株式会社 | 研磨組成物及び研磨方法並びに研磨組成物の製造方法 |
WO2016038771A1 (ja) * | 2014-09-12 | 2016-03-17 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
Families Citing this family (27)
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FR2936169B1 (fr) * | 2008-09-24 | 2011-05-13 | Univ Paris Curie | Composition catalytique pour le traitement des gaz de combustion du charbon, son procede de preparation, systeme catalytique la comprenant et utilisation |
JP5402391B2 (ja) * | 2009-01-27 | 2014-01-29 | 信越化学工業株式会社 | 半導体用合成石英ガラス基板の加工方法 |
US20120186572A1 (en) * | 2009-07-28 | 2012-07-26 | Helmuth Treichel | Silicon wafer sawing fluid and process for use thereof |
CN102956450B (zh) * | 2011-08-16 | 2015-03-11 | 中芯国际集成电路制造(北京)有限公司 | 一种制作半导体器件的方法 |
SG188775A1 (en) * | 2011-09-30 | 2013-04-30 | Hoya Corp | Manufacturing method of glass substrate for magnetic disk, magnetic disk, and magnetic data recording/reproducing device |
JP5907081B2 (ja) * | 2012-02-02 | 2016-04-20 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
CN102778767B (zh) * | 2012-06-29 | 2014-11-12 | 南京中电熊猫液晶显示科技有限公司 | 一种液晶面板修复方法 |
US8821215B2 (en) * | 2012-09-07 | 2014-09-02 | Cabot Microelectronics Corporation | Polypyrrolidone polishing composition and method |
JP6156207B2 (ja) | 2013-04-02 | 2017-07-05 | 信越化学工業株式会社 | 合成石英ガラス基板の製造方法 |
EP3039098B1 (en) | 2013-08-30 | 2020-09-30 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
CN103509472A (zh) * | 2013-10-25 | 2014-01-15 | 上海华明高纳稀土新材料有限公司 | 铈基混合稀土抛光粉及其制备方法 |
KR102659674B1 (ko) * | 2014-05-30 | 2024-04-19 | 가부시끼가이샤 레조낙 | Cmp용 연마액, cmp용 연마액 세트 및 연마 방법 |
CN105778774A (zh) * | 2014-12-23 | 2016-07-20 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP2018508568A (ja) | 2015-01-20 | 2018-03-29 | セリオン,リミティド ライアビリティ カンパニー | カタラーゼ様活性を有するeddsでキレート化されたナノセリア |
JP6533439B2 (ja) * | 2015-09-15 | 2019-06-19 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
US9293339B1 (en) * | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
KR102509260B1 (ko) * | 2015-11-20 | 2023-03-14 | 삼성디스플레이 주식회사 | 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법 |
US10580666B2 (en) * | 2016-07-01 | 2020-03-03 | Corning Incorporated | Carrier substrates for semiconductor processing |
JP6827318B2 (ja) * | 2016-12-28 | 2021-02-10 | 花王株式会社 | 酸化セリウム砥粒 |
JP6761339B2 (ja) * | 2016-12-28 | 2020-09-23 | 花王株式会社 | 酸化セリウム砥粒 |
KR102343869B1 (ko) * | 2017-06-01 | 2021-12-27 | 니끼 쇼꾸바이 카세이 가부시키가이샤 | 세리아계 복합 미립자 분산액, 그 제조 방법 및 세리아계 복합 미립자 분산액을 포함하는 연마용 지립 분산액 |
CN109251677B (zh) * | 2017-07-13 | 2021-08-13 | 安集微电子科技(上海)股份有限公司 | 一种化学机械抛光液 |
WO2019043819A1 (ja) * | 2017-08-30 | 2019-03-07 | 日立化成株式会社 | スラリ及び研磨方法 |
JP7028592B2 (ja) * | 2017-09-19 | 2022-03-02 | 株式会社フジミインコーポレーテッド | 表面処理組成物、表面処理組成物の製造方法、表面処理方法、および半導体基板の製造方法 |
CN107629701B (zh) * | 2017-11-02 | 2021-04-13 | 东旭光电科技股份有限公司 | 抛光液及其制备方法 |
WO2019099655A1 (en) * | 2017-11-15 | 2019-05-23 | Saint-Gobain Ceramics & Plastics, Inc. | Composition for conducting material removal operations and method for forming same |
US11167375B2 (en) | 2018-08-10 | 2021-11-09 | The Research Foundation For The State University Of New York | Additive manufacturing processes and additively manufactured products |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06226094A (ja) * | 1992-12-21 | 1994-08-16 | Rhone Poulenc Chim | セリウム及びジルコニウムの混成酸化物をベースにした組成物、製造法並びに用法 |
JPH10237425A (ja) | 1997-02-24 | 1998-09-08 | Toray Ind Inc | 研磨材 |
JPH10512191A (ja) * | 1995-07-03 | 1998-11-24 | ローヌプーラン シミ | 酸化ジルコニウムと酸化セリウムを基材とした組成物、その製造法及び用途 |
JP2001348563A (ja) | 2000-06-06 | 2001-12-18 | Toray Ind Inc | 研磨剤 |
EP1378489A1 (en) | 2002-07-03 | 2004-01-07 | Eidgenössische Technische Hochschule Zürich | Metal oxides prepared by flame spray pyrolysis |
EP1542266A1 (en) | 2002-07-22 | 2005-06-15 | Seimi Chemical Co., Ltd. | Semiconductor abrasive, process for producing the same and method of polishing |
JP3782771B2 (ja) | 2002-11-06 | 2006-06-07 | ユシロ化学工業株式会社 | 研磨用砥粒及び研磨剤の製造方法 |
EP1707534A1 (en) | 2004-01-21 | 2006-10-04 | Mitsui Mining and Smelting Co., Ltd | Oxide solid solution powder |
WO2006120727A1 (ja) | 2005-05-06 | 2006-11-16 | Asahi Glass Company, Limited | 銅配線研磨用組成物および半導体集積回路表面の研磨方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3341973B2 (ja) | 1995-12-07 | 2002-11-05 | 株式会社豊田中央研究所 | 酸化物固溶体粒子及びその製造方法 |
US5958827A (en) * | 1995-12-07 | 1999-09-28 | Toyota Jidosha Kabushiki Kaisha | Solid solution particle of oxides, a process for producing the same and a catalyst for purifying exhaust gases |
JP3338669B2 (ja) | 1999-08-03 | 2002-10-28 | 株式会社コスメック | データム機能付きクランプ装置 |
JP2001351883A (ja) | 2000-06-06 | 2001-12-21 | Toray Ind Inc | 半導体絶縁膜層用研磨剤 |
JP2001348564A (ja) | 2000-06-06 | 2001-12-18 | Toray Ind Inc | 研磨剤 |
JP2001351882A (ja) | 2000-06-06 | 2001-12-21 | Toray Ind Inc | 研磨剤 |
JP2002097459A (ja) | 2000-09-25 | 2002-04-02 | Toray Ind Inc | 研磨剤 |
JP3999557B2 (ja) * | 2002-04-30 | 2007-10-31 | 株式会社日本触媒 | 炭化水素の部分酸化用触媒及び該触媒を用いた水素含有ガスの製造方法 |
JP4062977B2 (ja) | 2002-06-04 | 2008-03-19 | 日立化成工業株式会社 | 研磨剤及び基板の研磨方法 |
JP2005158867A (ja) | 2003-11-21 | 2005-06-16 | Jsr Corp | 化学機械研磨用水系分散体を調製するためのセット |
US20060083694A1 (en) * | 2004-08-07 | 2006-04-20 | Cabot Corporation | Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same |
US7497935B2 (en) * | 2004-08-27 | 2009-03-03 | Ppg Industries Ohio, Inc. | Electrodepositable coating compositions and methods related thereto |
FR2875149B1 (fr) * | 2004-09-15 | 2006-12-15 | Rhodia Chimie Sa | Procede de fabrication d'un filtre a particules catalyse et filtre ainsi obtenu |
JP4027929B2 (ja) | 2004-11-30 | 2007-12-26 | 花王株式会社 | 半導体基板用研磨液組成物 |
JP2006173411A (ja) | 2004-12-16 | 2006-06-29 | Kao Corp | 半導体基板用研磨液組成物 |
-
2007
- 2007-12-28 EP EP07860512A patent/EP2107093B1/en not_active Not-in-force
- 2007-12-28 CN CN2007800479599A patent/CN101568615B/zh not_active Expired - Fee Related
- 2007-12-28 US US12/520,747 patent/US8357311B2/en active Active
- 2007-12-28 WO PCT/JP2007/075309 patent/WO2008081943A1/ja active Application Filing
- 2007-12-28 TW TW096151339A patent/TWI441905B/zh not_active IP Right Cessation
- 2007-12-28 KR KR1020097012348A patent/KR101388956B1/ko active IP Right Grant
-
2012
- 2012-12-17 US US13/717,589 patent/US8617994B2/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06226094A (ja) * | 1992-12-21 | 1994-08-16 | Rhone Poulenc Chim | セリウム及びジルコニウムの混成酸化物をベースにした組成物、製造法並びに用法 |
JPH10512191A (ja) * | 1995-07-03 | 1998-11-24 | ローヌプーラン シミ | 酸化ジルコニウムと酸化セリウムを基材とした組成物、その製造法及び用途 |
JPH10237425A (ja) | 1997-02-24 | 1998-09-08 | Toray Ind Inc | 研磨材 |
JP2001348563A (ja) | 2000-06-06 | 2001-12-18 | Toray Ind Inc | 研磨剤 |
EP1378489A1 (en) | 2002-07-03 | 2004-01-07 | Eidgenössische Technische Hochschule Zürich | Metal oxides prepared by flame spray pyrolysis |
EP1542266A1 (en) | 2002-07-22 | 2005-06-15 | Seimi Chemical Co., Ltd. | Semiconductor abrasive, process for producing the same and method of polishing |
JP3782771B2 (ja) | 2002-11-06 | 2006-06-07 | ユシロ化学工業株式会社 | 研磨用砥粒及び研磨剤の製造方法 |
EP1707534A1 (en) | 2004-01-21 | 2006-10-04 | Mitsui Mining and Smelting Co., Ltd | Oxide solid solution powder |
WO2006120727A1 (ja) | 2005-05-06 | 2006-11-16 | Asahi Glass Company, Limited | 銅配線研磨用組成物および半導体集積回路表面の研磨方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2107093A4 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2010016063A (ja) * | 2008-07-01 | 2010-01-21 | Kao Corp | 研磨液組成物 |
JP2010016064A (ja) * | 2008-07-01 | 2010-01-21 | Kao Corp | 研磨液組成物 |
JP2013527985A (ja) * | 2010-04-16 | 2013-07-04 | キャボット マイクロエレクトロニクス コーポレイション | バルクシリコンの研磨組成物及び研磨方法 |
WO2011132665A1 (ja) * | 2010-04-20 | 2011-10-27 | 花王株式会社 | ハードディスク用アルミノシリケートガラス基板の製造方法 |
JP2011240478A (ja) * | 2010-04-20 | 2011-12-01 | Kao Corp | アルミノシリケートガラス基板用研磨液組成物 |
US9053736B2 (en) | 2010-04-20 | 2015-06-09 | Kao Corporation | Method for manufacturing an aluminosilicate glass substrate for hard disks |
WO2015136832A1 (ja) * | 2014-03-11 | 2015-09-17 | 信越化学工業株式会社 | 研磨組成物及び研磨方法並びに研磨組成物の製造方法 |
JP2015168818A (ja) * | 2014-03-11 | 2015-09-28 | 信越化学工業株式会社 | 研磨組成物及び研磨方法並びに研磨組成物の製造方法 |
US10017669B2 (en) | 2014-03-11 | 2018-07-10 | Shin-Etsu Chemical Co., Ltd. | Polishing composition, polishing method, and method for producing polishing composition |
WO2016038771A1 (ja) * | 2014-09-12 | 2016-03-17 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
JP2016056327A (ja) * | 2014-09-12 | 2016-04-21 | 信越化学工業株式会社 | 研磨組成物及び研磨方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2107093A4 (en) | 2011-06-29 |
CN101568615B (zh) | 2013-02-06 |
EP2107093A1 (en) | 2009-10-07 |
TW200900489A (en) | 2009-01-01 |
US8617994B2 (en) | 2013-12-31 |
US8357311B2 (en) | 2013-01-22 |
US20100056026A1 (en) | 2010-03-04 |
CN101568615A (zh) | 2009-10-28 |
US20130109194A1 (en) | 2013-05-02 |
EP2107093B1 (en) | 2013-02-13 |
TWI441905B (zh) | 2014-06-21 |
KR101388956B1 (ko) | 2014-04-24 |
KR20090091761A (ko) | 2009-08-28 |
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