Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
  • H10K50/15—Hole transporting layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
• • C—CHEMISTRY; METALLURGY
  • C07—ORGANIC CHEMISTRY
  • C07D—HETEROCYCLIC COMPOUNDS
  • C07D249/00—Heterocyclic compounds containing five-membered rings having three nitrogen atoms as the only ring hetero atoms
  • C07D249/02—Heterocyclic compounds containing five-membered rings having three nitrogen atoms as the only ring hetero atoms not condensed with other rings
  • C07D249/04—1,2,3-Triazoles; Hydrogenated 1,2,3-triazoles
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/14—Carrier transporting layers
  • H10K50/15—Hole transporting layers
  • H10K50/155—Hole transporting layers comprising dopants
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K50/00—Organic light-emitting devices
  • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
  • H10K50/18—Carrier blocking layers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
  • H10K85/6565—Oxadiazole compounds
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
  • H10K2102/301—Details of OLEDs
  • H10K2102/351—Thickness
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
  • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
  • H10K85/60—Organic compounds having low molecular weight
  • H10K85/649—Aromatic compounds comprising a hetero atom
  • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom

Definitions

• the present invention relates to current excitation type light-emitting elements. Further, the present invention relates to light-emitting devices and electronic devices which have the light-emitting element.
• the light-emitting element can be formed into a film shape, light emission can be easily obtained from a flat surface with large-area. This is a feature which is difficult to be obtained by point light sources typified by an incandescent lamp and an LED or linear light sources typified by a fluorescent lamp. Accordingly, the light-emitting element is extremely effective for use as a flat light source applicable to illumination and the like.
• Light-emitting elements utilizing electroluminescence are classified broadly according to whether they use an organic compound or an inorganic compound as a light-emissive substance. [0006]
• an organic compound When an organic compound is used as a light-emitting substance, electrons and holes are each injected into a layer including a light-emitting organic compound from a pair of electrodes by voltage application to a light-emitting element, so that a current flows therethrough. The electrons and holes (carriers) are recombined, and thus, the light-emitting organic compound is excited. The light-emitting organic compound relaxes to a ground state from the excited state, thereby emitting light. Based on this mechanism, such a light-emitting element is referred to as current excitation type light-emitting element.
• the excited state of an organic compound can be a singlet excited state or a triplet excited state, and luminescence from the singlet excited state is referred to as fluorescence, and luminescence from the triplet excited state is referred to as phosphorescence.
• fluorescence luminescence from the triplet excited state
• phosphorescence luminescence from the triplet excited state
• a hole-blocking layer is provided, whereby light is efficiently emitted from a light-emitting element using a phosphorescent material.
• the hole-blocking layer does not have durability and a lifetime of the light-emitting element is extremely short. Thus, it has been desired to develop a light-emitting element of which light-emitting efficiency is high and lifetime is long.
• the object of the present invention to provide a light-emitting element with high luminous efficiency, high luminous efficiency, and a long lifetime.
• the object of the present invention also includes provision of a light-emitting device and an electronic device with high luminous efficiency, high luminous efficiency, and a long lifetime.
• a light-emitting element includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property
• the second organic compound is a substance into which a hole is not injected and which reduces a hole-transporting property of the first layer. Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than that of the second electrode.
• a light-emitting element includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property, while the second organic compound is a hole-blocking material having a dipole moment of larger than or equal to 2.0 debye.
• the light-emitting element of the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property and a difference in the ionization potential between the second organic compound and the first organic compound is greater than or equal to 0.5 eV.
• the dipole moment of the second organic compound is also larger than or equal to 2.0 debye.
• Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than a potential of the second electrode.
• a light-emitting element includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property
• the second organic compound has an ionization potential of greater than or equal to 5.8 eV and simultaneously has a dipole moment of larger than or equal to 2.0 debye.
• Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than a potential of the second electrode.
• Another feature of the present invention provides a light-emitting element _
• the light-emitting element of the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property, and the difference in the ionization potential between the second organic compound and the first organic compound is greater than or equal to 0.5 eV.
• the second organic compound has a heterocycle. Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than a potential of the second electrode.
• the present invention provides a light-emitting element having a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property
• the second organic compound has an ionization potential of greater than or equal to 5.8 eV and also has a heterocycle.
• Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than a potential of the second electrode.
• a light-emitting element includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property
• the second organic compound is any of an oxadiazole derivative, a triazole derivative, and phenanthroline derivative.
• Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than a potential of the second electrode.
• Another feature of the present invention permits providing a light-emitting element comprising a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode.
• the first layer contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound has a hole-transporting property
• the second organic compound is any of l,3-bis[5-(p-tert-butylphenyl)-l,3,4-oxadiazol-2-yl]benzene,
• Light emission is obtained from the light-emitting layer by applying voltage to the first electrode and the second electrode so that a potential of the first electrode is higher than a potential of the second electrode.
• the light-emitting element has a feature that a concentration of the second organic compound in the first layer is greater than or equal to 1 wt% and less than or equal to 20 wt%. This concentration range allows the formation of a light-emitting element with a long lifetime.
• the first layer may not be in contact with the first electrode and the light-emitting layer.
• a layer may be provided between the first layer and the light-emitting layer and another layer may be provided between the first layer and the first electrode.
• a thickness of the first layer is preferably greater than or equal to 1 nm and less than or equal to 20 run.
• the first layer and the light-emitting layer may be provided so as to be in contact with each other.
• the present invention includes a light-emitting device having the above light-emitting element.
• the light-emitting device shown in this specification includes an image display device, a light-emitting device, or a light source (including a lighting device). Further, the light-emitting device of the present invention includes all the following modules: a module in which a connector such as a flexible printed circuit
• FPC tape automated bonding
• TAB tape automated bonding
• TCP tape carrier package
• the present invention includes an electronic device which is equipped with the light-emitting element of the present invention for the display portion. Therefore, one feature of the electronic device of the present invention is to include a display portion having both the above light-emitting element and a controller which controls light emission of the light-emitting element.
• a layer for controlling the carrier transport is provided; thus, a light-emitting element with high luminous efficiency can be obtained. In addition, a light-emitting element with high luminous efficiency and a long lifetime can be obtained.
• the light-emitting element of the present invention is applied to a light-emitting device and an electronic device, whereby a light-emitting device and an electronic device with high luminous efficiency and reduced power consumption can be obtained.
• a light-emitting device and an electronic device which consumes low power and have a long lifetime can be obtained.
• FIGS. IA and IB are views each illustrating a light-emitting element of the present invention.
• FIGS. 2A and 2B are views each illustrating a light-emitting element of the present invention.
• FIGS. 3 A to 3C are views each illustrating a light-emitting element of the present invention.
• FIG. 4 is a view illustrating a light-emitting element of the present invention
• FIG. 5 is a view illustrating a light-emitting element of the present invention
• FIGS. 6A and 6B are views illustrating a light-emitting device of the present invention
• FIGS. 7A and 7B are views illustrating a light-emitting device of the present invention
• FIGS. 8A to 8D are views each illustrating an electronic device of the present invention.
• FIG. 9 is a view illustrating an electronic device of the present invention.
• FIG. 10 is a view illustrating an electronic device of the present invention.
• FIG. 11 is a view illustrating an electronic device of the present invention
• FIG. 12 is a view illustrating a lighting device of the present invention
• FIG. 13 is a view illustrating a lighting device of the present invention
• FIG. 14 is a view illustrating a light-emitting element of embodiments
• FIG. 15 is a graph illustrating current density-luminance characteristics of the light-emitting elements manufactured in Embodiment 1;
• FIG. 16 is a graph illustrating voltage-luminance characteristics of the light-emitting elements manufactured in Embodiment 1;
• FIG. 17 is a graph illustrating luminance-current efficiency characteristics of the light-emitting elements manufactured in Embodiment 1;
• FIG. 18 is a graph illustrating the emission spectra of the light-emitting elements manufactured in Embodiment 1;
• FIG. 19 is a graph illustrating the results of the continuous lighting tests obtained by constant current driving of the light-emitting elements manufactured in Embodiment 1;
• FIG. 20 is a view illustrating a light-emitting element of embodiments
• FIG. 21 is a graph illustrating current density-luminance characteristics of the light-emitting elements manufactured in Embodiment 2;
• FIG. 22 is a graph illustrating voltage-luminance characteristics of the light-emitting elements manufactured in Embodiment 2;
• FIG. 23 is a graph illustrating luminance-current efficiency characteristics of the light-emitting elements manufactured in Embodiment 2;
• FIG. 24 is a graph illustrating the emission spectra of the light-emitting elements manufactured in Embodiment 2;
• FIG. 25 is a graph illustrating current density-luminance characteristics of the light-emitting elements manufactured in Embodiment 3
• FIG. 26 is a graph illustrating voltage-luminance characteristics of the light-emitting elements manufactured in Embodiment 3;
• FIG. 27 is a graph illustrating luminance-current efficiency characteristics of the light-emitting elements manufactured in Embodiment 3.
• FIG. 28 is a graph illustrating the emission spectra of the light-emitting elements manufactured in Embodiment 3.
• FIG. 29 is a graph illustrating current density-luminance characteristics of the light-emitting elements manufactured in Embodiment 4.
• FIG. 30 is a graph illustrating voltage-luminance characteristics of the light-emitting elements manufactured in Embodiment 4;
• FIG. 31 is a graph illustrating luminance-current efficiency characteristics of the light-emitting elements manufactured in Embodiment 4;
• FIG. 32 is a graph illustrating the emission spectra of the light-emitting elements manufactured in Embodiment 4.
• FIG. 33 is a graph illustrating current density-luminance characteristics of the light-emitting elements manufactured in Embodiment 5;
• FIG. 34 is a graph illustrating voltage-luminance characteristics of the light-emitting elements manufactured in Embodiment 5;
• FIG. 35 is a graph illustrating luminance-current efficiency characteristics of the light-emitting elements manufactured in Embodiment 5;
• FIG. 36 is a graph illustrating the emission spectra of the light-emitting elements manufactured in Embodiment 5;
• FIG. 37 is a graph illustrating oxidation characteristics of NPB
• FIG. 38 is a graph illustrating oxidation characteristics of OXD-7
• FIG. 39 is a graph illustrating oxidation characteristics of TAZOl
• FIG. 40 is a graph illustrating oxidation characteristics of BCP.
• composite refers not only to a state in which two materials are simply mixed but also to a state in which a plurality of materials are mixed and charges are transferred between the materials.
• FIG. IA One mode of a light-emitting element of the present invention will be described with reference to FIG. IA.
• This embodiment mode will describe a light-emitting element in which a layer for controlling the transport of holes is provided as a layer for controlling the carrier transport.
• the light-emitting element of the present invention has a plurality of layers between a pair of electrodes.
• the plurality of layers is stacked by combining layers formed of a substance having a high carrier-injecting property and a substance having a high carrier-transporting property so that a light-emitting region is formed at a position away from the electrodes, that is, so that carriers are recombined at a position away from the electrodes.
• a light-emitting element includes a first electrode 202, a second electrode 204, and an EL layer 203 provided between the first electrode 202 and the second electrode 204.
• first electrode 202 functions as an anode
• second electrode 204 functions as a cathode
• light emission is obtained when a voltage is applied to the first electrode 202 and the second electrode 204 so that the potential of the first electrode 202 is higher than the potential of the second electrode 204.
• a substrate 201 is used as a support of the light-emitting element.
• the substrate 201 glass, plastic, or the like can be used, for example. Note that materials other than glass or plastic can be used as long as they can function as a support of a light-emitting element.
• the first electrode 202 is preferably formed using a material with a high work function (specifically, 4.0 eV or more) such as metals, alloys, electrically conductive compounds, or a mixture of them.
• a material with a high work function such as metals, alloys, electrically conductive compounds, or a mixture of them.
• ITO indium tin oxide
• ITO containing silicon or silicon oxide indium zinc oxide (IZO), indium oxide containing tungsten oxide and zinc oxide (IWZO), and the like can be given.
• Such conductive metal oxide films are generally formed by a sputtering method, but may be also formed by an ink-jet method, a spin coating method, or the like by application of a sol-gel method or the like.
• indium zinc oxide can be deposited by a sputtering method using a target in which 1 to 20 wt% of zinc oxide is added to indium oxide.
• indium oxide containing tungsten oxide and zinc oxide can be deposited by a sputtering method using a target in which 0.5 to 5 wt% of tungsten oxide and 0.1 to 1 wt% of zinc oxide are added to indium oxide.
• the first electrode can be formed using various metals, alloys, electrically conductive compound, a mixture of them, or the like regardless of their work functions.
• aluminum (Al), silver (Ag), an aluminum alloy ⁇ e.g., AlSi), or the like can be used.
• an element belonging to Group 1 or 2 of the periodic table which has a low work function that is, alkali metals such as lithium (Li) and cesium (Cs), alkaline earth metals such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys of them (for example, MgAg and AlLi) can be used.
• alkali metals such as lithium (Li) and cesium (Cs)
• alkaline earth metals such as magnesium (Mg), calcium (Ca), and strontium (Sr), alloys of them (for example, MgAg and AlLi)
• rare earth metals such as europium (Eu) and ytterbium (Yb); alloys of them; or the like can be also used.
• a film made of an alkali metal, an alkaline earth metal, or an alloy of them can be formed by a vacuum deposition method.
• a film made of an alloy of an alkali metal or an alkaline earth metal can be also formed by a sputtering method. It is also possible to deposit a silver paste or the like by an ink-jet method or the like.
• the EL layer 203 shown in this embodiment mode includes a hole-injecting layer 211, a layer 212 for controlling the carrier transport, a hole-transporting layer 213, a light-emitting layer 214, an electron-transporting layer 215, and an electron-injecting layer 216.
• the structure of the EL layer 203 is not limited to the above structure as long as at least the layer for controlling the carrier transport 212 shown in this embodiment and the light-emitting layer 214 are included. That is, the structure of the EL layer 203 is not particularly limited.
• layers which contain a substance having a high electron-transporting property, a substance having a high hole-transporting property, a substance having a high electron-injecting property, a substance having a high hole-injecting property, a substance having a bipolar property (a substance with a high electron-transporting property and a high hole-transporting property), or the like may be appropriately combined with the layer for controlling the carrier transport and the light-emitting layer which are shown in this embodiment mode to form the EL layer 203.
• the EL layer 203 can be formed in any combination of the hole-injecting layer, the hole-transporting layer, the light-emitting layer, the electron-transporting layer, the electron-injecting layer, and the like as long as both the layer for controlling the carrier transport 212 and the light-emitting layer 214 are included. Specific materials for forming each layer are shown below. [0038]
• the hole-injecting layer 211 is a layer containing a substance having a high hole-injecting property.
• a substance having a high hole-injecting property molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, manganese oxide, or the like can be used.
• phthalocyanine-based compounds such as phthalocyanine (abbreviation: H 2 PC), copper(II) phthalocyanine (abbreviation: CuPc), and vanadyl(IV) phthalocyanine (VOPc); aromatic amine compounds such as 4,4',4''-tris(N, ⁇ f-diphenylamino)triphenylamine (abbreviation: TDATA),
• PCzPCAl 3-[N-(9-phenylcarbazol-3-yl)-N " -phenylamino]-9-phenylcarbazole
• PCzPCA2 3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole
• the hole-injecting layer 211 can be formed using a composite material in which a substance having an acceptor property is mixed into a substance having a high hole-transporting property.
• a material for forming the electrode can be selected regardless of its work function with the use of a composite material in which a substance having an acceptor property is mixed into a substance having a high hole-transporting property.
• Such a composite material can be formed by co-depositing a substance having a high hole-transporting property and a substance having an acceptor property.
• an organic compound used for the composite material various compounds such as aromatic amine compounds, carbazole derivatives, aromatic hydrocarbons, and compounds with a high molecular-weight (for example, oligomer, dendrimer, or polymer) can be used.
• the organic compound used for the composite material is preferably an organic compound having a high hole-transporting property. Specifically, a substance with a hole mobility of 10 "6 cm 2 /Vs or more is preferably used. However, other substances may be also used as long as the hole-transporting properties thereof are higher than the electron-transporting properties thereof. Specific organic compounds that can be used for the composite material are described below. [0041]
• organic compounds can be used for the composite material: aromatic amine compounds such as MTDATA, TDATA, DPAB, DNTPD, DPA3B, PCzPCAl, PCzPCA2, PCzPCNl,
• NPB 4,4'-bis[iV-(l-naphthyl)-N-phenylamino]biphenyl
• TPD N ⁇ V r -bis(3-methylphenyl)-iV :( ⁇ r -diphenyl-[l,l'-biphenyl]-4,4'-diamine
• carbazole derivatives such as 4,4'-di(JV-carbazolyl)biphenyl (abbreviation: CBP), l,3,5-tris[4-(N-carbazolyl)phenyl]benzene (abbreviation: TCPB),
• CzPA 9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole
• aromatic hydrocarbon compounds such as 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 2-tert-butyl-9,10-di(l-naphthyl)anthracene, 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA),
• organic compounds such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F 4 -TCNQ) and chloranil, and a transition metal oxide can be given.
• oxides of metals belonging to Groups 4 to 8 in the periodic table can be also given.
• vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide which have high electron-accepting properties.
• molybdenum oxide is particularly preferable because it is stable even in atmospheric air, has a low hygroscopic property, and is easy to handle.
• compounds with a high molecular-weight for example, oligomer, dendrimer, or polymer
• the following compounds with a high molecular-weight can be used: poly(iV-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine) (abbreviation: PVTPA), poly[iV-(4- ⁇ iV -[4-(4-diphenylamino)phenyl]phenyl-iV-phenylammo ⁇ phenyl)methacryla mide] (abbreviation: PTPDMA), poly[iV ⁇ V " '-bis(4-butylphenyl)-N :> N'-bis(phenyl)benzidine (abbreviation: PoIy-TPD), and the like.
• PVK poly(iV-vinylcarbazole)
• PVTPA poly(4-vinyltriphenylamine)
• PTPDMA poly[iV-
• high molecular compounds mixed with acid such as poly (3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) and polyaniline/poly(styrenesulfonate) (PAni/PSS) can be also used.
• a composite material formed by using the above polymers such as
• PVK, PVTPA, PTPDMA, or PoIy-TPD and the above-mentioned substance having an acceptor property can be used as the hole-injecting layer 211.
• the layer 212 for controlling the carrier transport contains a first organic compound and a second organic compound, and a weight percent of the first organic compound is higher than that of the second organic compound.
• the first organic compound is a so-called hole-transporting material which has a hole-transporting property higher than an electron-transporting property.
• an aromatic amine compound can be used.
• MTDATA, TDATA, DPAB, DNTPD, DPA3B, PCzPCAl, PCzPCA2, PCzPCNl can be used.
• NPB 4,4'-bis[iV-(l-naphthyl)-N-phenylamino]biphenyl
• TPD 4,4'-bis[iV-(l-naphthyl)-N-phenylamino]biphenyl
• NPB 4,4'-bis[iV-(l-naphthyl)-N-phenylamino]biphenyl
• TPD N ⁇ -NPD
• TPD N ⁇ -NPD
• TPD N -diphenyl-[l , 1 '-biphenyl] -4,4'-diamine
• a compound with a high molecular-weight such as PVK, PVTPA, PTPDMA, or PoIy-TPD can be also used.
• the second organic compound is an organic compound with a large dipole moment to which a hole is not injected.
• a hole-blocking material can be given as a substance in which a hole is not injected.
• the hole-blocking material is a substance with a high ionization potential.
• a material whose ionization potential is greater than or equal to 5.8 eV is preferable because a hole is not injected to such a material.
• the ionization potential of greater than or equal to 6.0 eV is particularly preferable.
• a material with an ionization potential which is 0.5 eV greater than that of the first organic compound is also preferable because a hole injected to the first compound is not transported to the second organic compound.
• the dipole moment of the second organic compound is preferably larger than or equal to 2.0 debye.
• the organic compound which has the dipole moment of much larger than 2.0 debye can be preferably used as the layer for controlling the carrier transport.
• the second organic compound specifically, the following can be used: oxadiazole derivatives such as l,3-bis[5-(p-tert-butylphenyl)-l,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7) and 2-(4-biphenylyl)-5-(4-fert-butylphenyl)-l,3,4-oxadiazole (abbreviation: PBD); triazole derivatives such as 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-l,2,4-triazole (abbreviation: TAZOl) and 3,5-bis(4-tert-butyl
• FIG. 4 A conceptual view of the layer for controlling the carrier transport which is shown in this embodiment mode is illustrated in FIG. 4.
• a first organic compound 221 has a hole-transporting property; therefore, holes (h + ) are readily injected to the organic compound 221 and transported to the vicinal first organic compound.
• a hole is not injected into a second organic compound 222 because the ionization potential of the second organic compound 222 is larger than that of the first organic compound and because the ionization potential difference between the second organic compound and the first organic compound is greater than or equal to
• the second organic compound 222 is a substance with a large dipole moment. Specifically, the dipole moment is preferably greater than or equal to 2.0 debye. Inclusion of the second organic compound with a large dipole moment decreases the transporting rate of holes which are transported between the first organic compounds. That is, it is considered that the second organic compound with a large dipole moment which is located in vicinity of the first organic compound has an effect to retard the transport of holes.
• transport rate of carriers can be tuned by controlling the concentration of the second organic compound.
• control of the carrier transport allows the improvement in carrier balance, which results in improved recombination probability of holes and electrons; thus, high luminous efficiency can be obtained.
• a structure in which the layer for controlling the carrier transport is provided between the light-emitting layer and the first electrode which functions as an anode is particularly effective for the light-emitting element in which excessive holes are readily formed upon driving.
• the present invention can be preferably applied to a number of light-emitting elements using an organic compound.
• holes are injected into the hole-transporting layer 213 without receiving the effect of the layer 212 to decelerate the transport of holes, which allows the holes to reach the light-emitting layer 214.
• a light-emitting element using an organic compound readily exists in the hole-excessive state upon driving. In that case, the holes which cannot undergo the recombination with electrons pass through the light-emitting layer 214. When the holes pass through the light-emitting layer 214, the holes reach the vicinities of the interface between the light-emitting layer 214 and the electron-transporting layer 215.
• a light-emitting region is formed in the vicinities of the interface between the light-emitting layer 214 and the electron-transporting layer 215; thus, the recombination probability of the light-emitting layer 214 and luminous efficiency decrease. Further, when the holes reach the electron-transporting layer 215, the electron- transporting layer 215 is readily deteriorated. When the number of holes which reach the electron-transporting layer 215 is increased over time, the recombination probability is reduced over time, which results in reduction in element lifetime (luminance decay over time). [0058]
• holes injected from the first electrode 202 pass through the hole-injecting layer 211, and are injected into the layer 212 for controlling the carrier transport. Transport rate of the holes injected into the layer 212 for controlling the carrier transport is decreased, and the hole injection to the hole-transporting layer 213 is retarded. Therefore, the hole injection to the light-emitting layer 214 is controlled.
• the light-emitting region is formed at around the center of the light-emitting layer 214 in the light-emitting element of the present invention, whereas the light-emitting region is normally formed in the vicinities of the interface between the light-emitting layer 214 and the electron-transporting layer 215 in a conventional light-emitting element. Therefore, the possibility that the holes reach the electron-transporting layer 215, which promotes deterioration of the electron-transporting layer 215, is reduced. [0059] It is important in the present invention that an organic compound having a hole-transporting property is added with an organic compound which reduces a hole-transporting property, instead of just applying a substance with low hole mobility in the layer 212 for controlling the carrier transport.
• Such a structure permits suppressing the change over time of the initially well-controlled number of the injected holes, in addition to just controlling the hole-injection into the light-emitting layer. Accordingly, in the light-emitting element of the present invention, a phenomenon can be prevented, in which carrier balance is deteriorated over time and recombination probability is decreased, which results in extension of element lifetime (suppression of luminance decay over time).
• a light-emitting region is hard to be formed at the interface between the light-emitting layer and the hole-transporting layer or at the interface between the light-emitting layer and the electron-transporting layer. Therefore, the light-emitting element is hardly deteriorated because the light-emitting region is not located in a region close to the hole-transporting layer or the electron-transporting layer. Further, change in carrier balance over time (particularly, change over time of the number of injected electron) can be suppressed. Therefore, a light-emitting element with negligible deterioration and a long lifetime can be obtained. [0061]
• a concentration of the second organic compound in the layer for controlling the carrier transport is preferably greater than or equal to 1 wt% and less than or equal to 20 wt%. This concentration range allows the formation of the light-emitting element with a lifetime. In particular, it is more preferred that the concentration of the second organic compound is greater than or equal to lwt% and less than or equal to 10 wt%.
• the thickness of the layer for controlling the carrier transport is preferably greater than or equal to 1 nm and less than or equal to 20 run.
• the thickness of the layer for controlling the carrier transport is preferably greater than or equal to 1 nm and less than or equal to 20 nm.
• the hole-transporting layer 213 is a layer containing a substance having a high hole-transporting property.
• the substance having a high hole-transporting property specifically, as a organic compound with a low molecular-weight, an aromatic amine compound such as NPB (or ⁇ -NPD), TPD,
• DFLDPBi 4,4'-bis[N-(spiro-9,9'-bifluorene-2-yl)-JV-plienylamino]biphenyl
• BSPB 4,4'-bis[N-(spiro-9,9'-bifluorene-2-yl)-JV-plienylamino]biphenyl
• the substances described here has a mobility of 10 " cm /Vs or more.
• substances other than the above substances may be also used as long as the hole-transporting properties thereof are higher than the electron-transporting properties thereof.
• the layer containing the substance having a high hole-transporting property is not limited to be a single layer but may exist in a stacked form in which two or more layers formed of the above substances are stacked.
• the hole-transporting layer 213 the compound with a high molecular-weight such as PVK, PVTPA, PTPDMA, or PoIy-TPD can be used.
• the light-emitting layer 214 is a layer containing a highly light-emissive substance, which can be formed using various materials.
• the compounds describe below are exemplified as organic compounds with a low molecular-weight.
• JV r ⁇ V -bis[4-(9H-carbazol-9-yl)phenyl]-N J ⁇ 7 ' -diphenylstilbene-4,4'-diamine (abbreviation: (YGA2S); 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA) 5 and the like.
• N-(9, 10-diphenyl-2-anthryl)-iV,N 'Jf -triphenyl-1 ,4-phenylenediamine abbreviation: 2DPAPA
• N " -[9,10-bis(l,l'-biphenyl-2-yl)-2-anthryl]-N ⁇ V' ⁇ V-triphenyl-l,4-phenylenediamine abbreviation: 2DPABPhA
• DPhAPhA DPhAPhA
• rubrene 5,12-bis(l,l'-biphenyl-4-yl)-6,ll-diphenyltetracene
• BPT blue-emitting material
• the light-emitting layer may also have a structure in which the above highly light-emissive substance is dispersed in another substance.
• Various substances can be used for the material in which the light-emissive substance is dispersed. In particular, it is preferable to use a substance whose lowest unoccupied molecular orbital
• the following metal complexes can be used: tris(8-quinolinolato)aluminum(i ⁇ ) (abbreviation: AIq); tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: AhTIq 3 ); bis(10-hydroxybenzo[/j]-quinolinato)beryllium(II) (abbreviation: BeBq 2 ); bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (BAIq); bis(8-quinolinolato)zinc(II) (abbreviation: Znq); bis[2-(2-benzoxazolyl)phenolato]zinc(II) (Abbreviation: ZnPBO); bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: Zn(BTZ) 2 ); and the like.
• AIq tris(8-quino
• heterocyclic compounds can be also used: 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-l,3,4-oxadiazole (abbreviation: PBD); l,3-bis[5-(p-te/t-butylphenyl)-l,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7); 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-l,2,4-triazole (abbreviation: TAZ);
• DPAnth 6,12-dimethoxy-5,ll-diphenylchrysene; and the like.
• N r /V-dipheyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation:
• CzAlPA 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA); iV,9-diphenyl-iV-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amme (abbreviation:
• PCAPA PCAPA
• iV r ,9-diphenyl-iV- ⁇ 4-[4-(10-phenyl-9-anthryl)phenyl]phenyl ⁇ 9H " -carbazol-3-amine abbreviation: PCAPBA
• iV-(9,10-diphenyl-2-anthryl)-iV,9-diphenyl-9H-carbazol-3-amine abbreviation:
• NPB or ⁇ -NPD
• TPD or DFLDPBi
• BSPB or the like.
• the light-emissive substance As a material in which the light-emissive substance is dispersed, plural kinds of materials can be used. For example, a substance such as rubrene or like, which suppresses the crystallization of the light-emissive layer, can be further added in order to suppress the crystallization of the light emissive substrate. In addition, NPB, AIq, or the like may be further added in order to efficiently transfer energy to the light-emissive substance. [0069]
• the crystallization of the light-emitting layer 214 can be suppressed. Further, concentration quenching which results from the high concentration of the highly light-emissive substance can be also suppressed. [0070] Compounds with a high molecular-weight can be also used for the light-emitting layer 214.
• poly(9,9-dioctylfluorene-2,7-diyl) (abbreviation: POF); poly[(9,9-dioctylfluorene-2,7-diyl-co-(2,5-dimethoxybenzene-l,4-diyl)] (abbreviation: PF-DMOP); poly ⁇ (9,9-dioctylfluorene-2,7-diyl)-co-[iV > iV -di-(p-butylphenyl)-l,4-diaminobenzene] ⁇ (abbreviation: TAB-PFH); and the like.
• POF poly(9,9-dioctylfluorene-2,7-diyl)
• PF-DMOP poly[(9,9-dioctylfluorene-2,7-diyl)-co-[iV > i
• poly(p-phenylenevinylene) (abbreviation: PPV); poly[(9,9-dihexylfluorene-2,7-diyl)- ⁇ Zt-co-(benzo[2,l,3]thiadiazol-4,7-diyl)]
• PFBT poly[(9,9-dioctyl-2,7-divinylenefluorenylene)-fl/t-co-(2-methoxy-5-(2-ethylhexyloxy)-l ,4-phenylene)]; and the like.
• poly[2-methoxy-5-(2'-ethylhexoxy)-l,4-phenylenevinylene] (abbreviation: MEH-PPV); poly(3-butylthiophene-2,5-diyl); poly ⁇ [9,9-dihexyl-2,7-bis(l-cyanovinylene)fluorenylene]- ⁇ /t-co-[2,5-bis(iV ;f iV " -diphenyl amino)-l,4-phenylene] ⁇ ; poly ⁇ [2-methoxy-5-(2-ethylhexyloxy)-l,4-bis(l-cyanovinylenephenylene)]- ⁇ /t-co-[2,5- Ms(N 5 N '-diphenylamino)-l,4-phenylene] ⁇ (abbreviation: CN-PPV-
• the electron-transporting layer 215 is a layer containing a substance having a high electron-transporting property.
• the following metal complexes can be used: tris(8-quinolinolato)aluminum(III) (abbreviation: AIq); tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: AInIq 3 ); bis(10-hydroxybenzo[/ ⁇ ]-quinolinato)beryllium(II) (abbreviation: BeBq 2 ); bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (BAIq); bis(8-quinolinolato)zinc(II) (abbreviation: Znq); bis[2-(2-benzoxazolyl)phenolato]zinc(II) (Abbreviation: ZnPBO); bis[2-(2-benzothiazo
• heterocyclic compounds can be also used: 2-(4-biphenylyl)-5 -(4-tert-butylphenyl)- 1 ,3,4-oxadiazole (abbreviation : PBD) ; 1 ,3-bis [5-(p-ter/-butylphen yl)- 1 ,3 ,4-oxadiazol-2-yl]benzene (abbreviation : OXD-7) ; 3-(4-biphenylyl)-4-phenyl-5-(4- ⁇ ert-butylphenyl)-l,2,4-triazole (abbreviation: TAZOl); 2,2',2"-(l,3,5-benzenetriyl)-tris(l-phenyl-lH-benzimidazole) (abbreviation: TPBI); bathophenanthroline (abbreviation: BPhen); bathocuproine (abbreviation: BCP); and the
• the substances described here are substances with a mobility of 10 ⁇ 6 cm2/Vs or more. Note that substances other than the above substances may be also used as the electron-transporting layer as long as the electron-transporting properties thereof are higher than the hole-transporting properties thereof. Further, the electron-transporting layer is not limited to be a single layer but may have a stacked structure in which two or more layers formed of the above substances are stacked. [0072]
• the electron-transporting layer 215 can be also formed using a compound with a high molecular-weight.
• a compound with a high molecular-weight for example, the following can be used: poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridin-3,5-diyl)] (abbreviation: PF-Py), poly[(9,9-dioctyllfmorene-2,7-diyl)-co-(2,2'-pyridin-6,6'-diyl)] (abbreviation: PF-BPy), and the like.
• the electron-injecting layer 216 is a layer containing a substance which has a high ability to promote electron-injection from the second electrode 204 to the EL layer 203.
• a substance having such an ability alkali metals, alkaline earth metals, or compounds thereof can be used such as lithium fluoride (LiF), cesium fluoride (CsF), and calcium fluoride (CaF 2 ).
• LiF lithium fluoride
• CsF cesium fluoride
• CaF 2 calcium fluoride
• the layer formed of a substance having an electron-transporting property in which an alkali earth metal, an alkaline earth metal, or a compound thereof is mixed is used because electrons can be efficiently injected from the second electrode 204.
• the second electrode 204 is preferably formed using a substance with a low work function (specifically, 3.8 eV or less) such as metals, alloys, electrically conductive compounds, or a mixture thereof.
• a cathode material include an element belonging to Group 1 or 2 of the periodic table, that is, alkali metals such a lithium (Li) and cesium (Cs) and alkaline earth metals such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys thereof (for example, MgAg and AlLi).
• alkali metals such as lithium (Li) and cesium (Cs)
• alkaline earth metals such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys thereof (for example, MgAg and AlLi).
• Rare earth metals such as europium (Eu) and ytterbium (Yb), alloys thereof, and the like can be also used.
• a film made of an alkali metal, an alkaline earth metal, or an alloy thereof can be formed by a vacuum deposition method. Further, a film formed of an alloy of an alkali metal or an alkaline earth metal can be formed by a sputtering method. It is also possible to deposit a metal paste such as a silver paste by an ink-jet method or the like.
• the second electrode 204 can be formed using various conductive materials such as Al, Ag, ITO, and ITO containing silicon or silicon oxide, regardless of their work functions.
• conductive materials can be deposited by a sputtering method, an ink-jet method, a spin coating method, or the like.
• a method forming the EL layer various methods can be used regardless of a dry process or a wet process. For example, a vacuum deposition method, an ink-jet method, a spin coating method, or the like can be used. Further, different deposition methods may be used for different electrodes or different layers. [0077]
• a compound with a high molecular-weight may be selected to form the EL layer by a wet process.
• an organic compound with a low molecular-weight may be selected to form the EL layer by a wet process.
• the electrodes can be formed by a wet process such as a sol-gel process or by a wet process with a paste of a metal material.
• the electrodes can be formed by a dry process such as a sputtering method or a vapor deposition method.
• the light-emitting layer is preferably formed by a wet process.
• the light-emitting layer is formed by an ink-jet method, selective deposition of the light-emitting layer for each color can be easily performed even when a large substrate is used.
• one or both the first electrode 202 and the second electrode 204 are light-transmitting electrodes.
• first electrode 202 is a light-transmitting electrode
• second electrode 204 is a light-transmitting electrode
• light emission is extracted from a side opposite to the substrate side through the second electrode 204 as illustrated in FIG. 3B.
• both the first electrode 202 and the second electrode 204 are light-transmitting electrodes
• light emission is extracted from both the substrate side and the side opposite to the substrate side through the first electrode 202 and the second electrode 204 as illustrated in FIG. 3C.
• the structure of the layers provided between the first electrode 202 and the second electrode 204 is not limited to the above structure. Any structure other than the above structure may be employed as long as a light-emitting region in which holes and electrons are recombined is provided apart from the first electrode 202 and the second electrode 204 in order to prevent quenching which occurs when the light-emitting region is close to the electrodes, and as long as the layer for controlling the carrier transport is provided.
• the structure of the layers provided between the first electrode 202 and the second electrode 204 is not particularly limited.
• layers which contain a substance having a high electron-transporting property, a substance having a high hole-transporting property, a substance having a high electron-injecting property, a substance having a high hole-injecting property, and a substance having a bipolar property (a substance with a high electron-transporting property and a hole-transporting property), or the like may be appropriately combined with the layer for controlling the carrier transport and the light-emitting layer which are shown in this embodiment mode.
• the layer for controlling the carrier transport shown in this embodiment mode is a layer for controlling the transport of holes.
• the layer for controlling the carrier transport between the anode and the light-emitting layer.
• a layer is formed between the light-emitting layer 214 and the layer 212 for controlling the carrier transport as illustrated in FIG. IA, that is, when the light-emitting layer 214 and the layer 212 for controlling the carrier transport are not in contact with each other, undesired interaction which occurs between the light-emitting layer 214 and the layer 212 for controlling the carrier transport can be suppressed. Therefore, such a structure is preferable because deterioration of the light-emitting element can be suppressed. [0086]
• a structure in which the light-emitting layer 214 and the layer 212 for controlling the carrier transport are in contact with each other may be employed.
• this structure it is preferable to use an organic compound, in which electrons are not easily injected and a band gap thereof is higher than that of an organic compound having the highest weight percent among the organic compounds contained in the light-emitting layer 214.
• the light-emitting layer 214 and the layer 212 for controlling the carrier transport can be successively formed with the same mask.
• this structure is preferred in manufacturing a full-color display or the like where selective formation of the layer for controlling the carrier transport is required separately for each light-emitting element, because this structure facilitates the manufacture thereof.
• the light-emitting elements illustrated in FIGS. 2A and 2B each have a structure in which the second electrode 204 which functions as a cathode, the EL layer 203, and the first electrode 202 which functions as an anode are sequentially stacked over the substrate 201.
• the light-emitting element illustrated in FIG. 2A has a structure in which the layers of the EL layer illustrated in FIG. IA are stacked in a reverse order, that is, the electron-injecting layer 216, the electron-transporting layer 215, the light-emitting layer 214, the hole-transporting layer 213, the layer 212 for controlling the carrier transport, and the hole-injecting layer 211 are sequentially stacked.
• 2B has a structure in which the layers of the EL layer illustrated in FIG. IB are stacked in a reverse order, that is the electron-injecting layer 216, the electron-transporting layer 215, the light-emitting layer 214, the layer 212 for controlling the carrier transport, the hole-transporting layer 213, and the hole-injecting layer 211 are sequentially stacked.
• the light-emitting element is formed over a substrate made of glass, plastic, or the like.
• a passive matrix type light-emitting device can be manufactured.
• TFTs thin film transistors
• an active matrix type light-emitting device in which drive of the light-emitting elements is controlled with the TFTs can be manufactured.
• the structure of the TFTs is not particularly limited. Either staggered TFTs or inversely staggered TFTs may be employed.
• a driver circuit formed on the TFT substrate may be formed from both N-channel and P-channel TFTs or from one of N-channel and P-channel TFTs.
• the crystallinity of a semiconductor film used for forming the TFTs is not specifically limited. Either an amorphous semiconductor film or a crystalline semiconductor film may be used.
• a light-emitting element of the present invention includes a layer for controlling the carrier transport.
• the layer for controlling the carrier transport contains at least two kinds of substances. Therefore, by selecting the combination of substances and controlling the mixture ratio thereof, the thickness of the layer, or the like, carrier balance can be precisely controlled.
• the carrier balance can be controlled by selecting the combination of substances and by controlling the mixture ratio thereof, the thickness of the layer, or the like, the carrier balance can be more easily controlled than in a conventional light-emitting element. That is, the transport of carriers can be controlled by controlling the mixture ratio of the substances, the thickness of the layer, or the like, without replacing the substances with a different one.
• the luminous efficiency of the light-emitting element can be improved.
• the layer for controlling the carrier transport makes it possible to prevent excessive holes from being injected and also to prevent holes from penetrating the light-emitting layer to reach the electron-transporting layer or the electron-injecting layer.
• the recombination probability in the light-emitting layer decreases (in other words, carrier balance is lost). This phenomenon results in decrease in luminous efficiency. Further, decrease in luminous efficiency over time is caused. That is, the lifetime of the light-emitting element is decreased.
• the layer for controlling the carrier transport as shown in this embodiment mode, it becomes possible to prevent excessive holes from being injected and also to prevent holes from penetrating the light-emitting layer to reach the electron-transporting layer or the electron-injecting layer. Further, a decrease in luminous efficiency over time can be suppressed. That is, a long-lifetime light-emitting element can be obtained.
• the second organic compound which has a lower weight percent than the first organic compound is used for controlling the carrier transport. Therefore, the transport of carriers can be controlled with a component having the lowest concentration among the components contained in the layer for controlling the carrier transport.
• the carrier balance hardly changes compared with the case where the carrier balance is controlled with a single substance.
• the carrier balance of the whole layer is changed by a partial change in morphology, partial crystallization, or the like. Therefore, such a light-emitting element will readily deteriorate over time.
• the transport of carriers is controlled with a component having the lowest weight percent among the components contained in the layer for controlling the carrier transport, it is possible to reduce the effects of morphological change, crystallization, aggregation, or the like, whereby deterioration over time can be suppressed. Therefore, a long-lifetime light-emitting element in which the luminous efficiency will not readily decrease over time can be obtained.
• a structure in which the layer for controlling the carrier transport is provided between the light-emitting layer and the second electrode which functions as a cathode is particularly effective for a light-emitting element which readily exists in the hole-excessive state upon driving. Since a light-emitting element using an organic compound tends to take the hole- excessive, state in many cases, the present invention can be preferably applied to a number of light-emitting elements using an organic compound.
• This embodiment mode will describe a mode of a light-emitting element in which a plurality of light-emitting units according to the present invention are stacked (hereinafter, referred to as a stacked type element) with reference to FIG. 5.
• This light-emitting element is a light-emitting element including a plurality of light-emitting units between a first electrode and a second electrode.
• a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between a first electrode 501 and a second electrode 502. As to the first electrode 501 and the second electrode 502, similar electrodes to those shown in Embodiment Mode 1 can be applied.
• the first light-emitting unit 511 and the second light-emitting unit 512 may each have the same structure or different structure, and a similar structure to that shown in Embodiment Mode 1 can be employed. [0099]
• a charge generation layer 513 contains a composite material of an organic compound and a metal oxide.
• the composite material of an organic compound and a metal oxide is the composite material shown in Embodiment Mode 1, and includes an organic compound and a metal oxide such as V 2 Os, MoO 3 , or WO 3 .
• the organic compound various compounds such as an aromatic amine compound, a carbazole derivative, aromatic hydrocarbon, and a compound with a high molecular-weight (oligomer, dendrimer, polymer, or the like) can be used.
• As the organic compound it is preferable to use the organic compound which has a hole-transporting property with a hole mobility of 10 "6 cm 2 /Vs or more.
• the composite material of the organic compound and the metal oxide can achieve low-voltage driving and low-current driving because of the superior carrier-injecting property and carrier-transporting property.
• the charge generation layer 513 may be formed by combination of a composite material of the organic compound and the metal oxide with other materials.
• a layer containing a composite material of the organic compound and the metal oxide may be combined with a layer containing one compound selected from substances having an electron-donating property and a compound having a high electron transporting property.
• a layer containing a composite material of the organic compound and the metal oxide may be combined with a transparent conductive film.
• any kind of structure is acceptable as long as the charge generation layer 513 interposed between the first light-emitting unit 511 and the second light-emitting unit 512 is capable of injecting electrons into one of these light-emitting units and holes into the other when voltage is applied to the first electrode 501 and the second electrode 502.
• this embodiment mode describes the light-emitting element having two light-emitting units, the present invention can be similarly applied to a light-emitting element in which three or more light-emitting units are stacked.
• the charge generation layer is provided between the pair of electrodes so as to partition the plural light-emitting units like the light-emitting element of this embodiment mode, it is possible to provide a light-emitting element which exhibits a high luminance at a low current density and a long lifetime. Thus, such a light-emitting element can be applied for illumination. .. [0103]
• the light-emitting units can be designed to emit light having different colors from each other, thereby obtaining light emission of a desired color from the whole light-emitting element.
• the emission colors of the first light-emitting unit and the second light-emitting unit are made complementary, so that a white-emissive light-emitting element can be obtained.
• the word "complementary” refers to the color relationship in which an achromatic color is obtained when colors are mixed. That is, mixing of complementarily colored light gives white light. The same relationship can be applied to a light-emitting element having three light-emitting units.
• This embodiment mode will describe a light-emitting device having a light-emitting element of the present invention.
• FIG. 6A is a top view illustrating a light-emitting device while FIG. 6B is a cross-sectional view taken along lines A-A' and B-B' of FIG. 6A.
• the light-emitting device includes a driver circuit portion (source-side driver circuit) 601, a pixel portion 602, and a driver circuit portion (gate-side driver circuit) 603 which are illustrated with dotted lines. These units control light emission of the light-emitting element.
• reference numeral 604 denotes a sealing substrate; 605, a sealing material; and 607, a space surrounded by the sealing material 605.
• a leading wire 608 is to transmit a signal to be inputted to the source-side driver circuit 601 and the gate-side driver circuit 603, and receive a video signal, a clock signal, a start signal, a reset signal, and the like from an FPC (Flexible Printed Circuit) 609, which serves as an external input terminal.
• FPC Flexible Printed Circuit
• this FPC may be provided with a printed wiring board (PWB).
• PWB printed wiring board
• the light-emitting device in this specification includes not only a light-emitting device itself but also a light-emitting device with an FPC or a PWB attached thereto.
• the driver circuit portion and the pixel portion are formed over an element substrate 610.
• the source-side driver circuit 601, which is the driver circuit portion, and one pixel in the pixel portion 602 are illustrated.
• a CMOS circuit which is a combination of an N-channel TFT 623 and a P-channel TFT 624, is formed as the source-side driver circuit 601.
• the driver circuit may be formed using various kinds of CMOS circuits, PMOS circuits, and NMOS circuits.
• a driver-integration type device in which a driver circuit is formed over the same substrate as a pixel portion, is shown in this embodiment mode, a driver circuit is not necessarily formed over the same substrate as a pixel portion and can be formed outside the substrate.
• the pixel portion 602 has a plurality of pixels, each of which includes a switching TFT 611, a current-controlling TFT 612, and a first electrode 613 which is electrically connected to a drain of the current-controlling TFT 612. Note that an insulator 614 is formed so as to cover an end portion of the first electrode 613. Here, a positive photosensitive acrylic resin film is used for the insulator 614. [0111]
• the insulator 614 is formed so as to have a curved surface having curvature at an upper end portion or a lower end portion thereof in order to obtain favorable coverage.
• the insulator 614 is preferably formed so as to have a curved surface with a curvature radius (0.2 to 3 ⁇ m) only at the upper end portion thereof.
• a negative photoresist which becomes insoluble in an etchant by light irradiation or a positive photoresist which becomes soluble in an etchant by light irradiation can be used for the insulator 614.
• An EL layer 616 and a second electrode 617 are formed over the first electrode 613.
• Various metals, alloys, electrically conductive compounds, and mixture thereof can be used for a material for forming the first electrode 613.
• the first electrode 613 can be formed by using a single-layer film such as a film made of ITO containing silicon, a film made of indium zinc oxide (IZO), a titanium nitride film, chromium film, a tungsten film, a Zn film, or a Pt film; a stacked layer of a titanium nitride film and a film containing aluminum as its main component; a three-layer structure of a titanium nitride film, a film containing aluminum as its main component, and a titanium nitride film; or the like.
• the electrode 613 has low resistance as a wiring, giving a favorable ohmic contact. Further, the first electrode 613 can function as an anode.
• the EL layer 616 is formed by various methods such as a vapor-deposition method using an evaporation mask, an ink-jet method, and a spin coating method.
• the EL layer 616 includes the light-emitting layer shown in Embodiment Mode 1.
• a low molecular compound, oligomer, dendrimer, or a high molecular compound may be also used.
• not only organic compounds but also inorganic compounds can be used for the material for forming the EL layer.
• the second electrode 617 As a material for forming the second electrode 617, various metals, alloys, electrically conductive compounds, and mixture of them can be used. When the second electrode 617 is used as a cathode, it is particularly preferable to select a material with a low work function (a work function of 3.8 eV or less) among such metals, alloys, electrically conductive compounds, and mixture thereof.
• a material with a low work function a work function of 3.8 eV or less
• elements belonging to Group 1 or 2 of the periodic table that is, alkali metals such a lithium (Li) and cesium (Cs) and alkaline earth metals such as magnesium (Mg), calcium (Ca), and strontium (Sr); alloys thereof (for example, MgAg and AlLi); and the like can be given.
• the second electrode 617 may be also formed using a stacked layer of a thin metal film and a transparent conductive film (for example, indium tin oxide (ITO), ITO containing silicon or silicon oxide, indium zinc oxide
• ITO indium tin oxide
• ITO containing silicon or silicon oxide indium zinc oxide
• IZO indium oxide containing tungsten oxide and zinc oxide
• a light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealing material 605.
• the space 607 is filled with a filler.
• an inert gas for example, nitrogen, argon, or the like
• the space 607 is filled with the sealing material 605.
• an epoxy resin is preferably used for the sealing material 605.
• Such material preferably allows as little moisture and oxygen as possible to penetrate.
• a glass substrate or a quartz substrate can be used as well as a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), polyester, acrylic, or the like.
• FIG. 7A is a perspective view of a passive type light-emitting device manufactured by applying the present invention.
• FIG. 7B is a cross-sectional view taken along a line X-Y of FIG. 7A.
• an EL layer 955 is provided between an electrode 952 and an electrode 956 over a substrate 951.
• a side wall of the partition layer 954 has such a gradient that the distance between one side wall and the other side wall is shortened as approaching the substrate surface. That is, a cross section of the partition layer 954 in a short-side direction is trapezoid-like, in which a bottom side (a side in a similar direction to a surface direction of the insulating layer 953, which is in contact with the insulating layer 953) is shorter than an upper side
• the light-emitting device of the present invention has the light-emitting element shown in Embodiment Mode 1 or 2. Thus, a light-emitting device with high luminous efficiency can be obtained.
• the light-emitting device of the present invention has the light-emitting element with high luminous efficiency, a light-emitting device with low power consumption can be obtained.
• the light-emitting device of the present invention has the long-lifetime light-emitting element which is hardly deteriorated, a long-lifetime light-emitting device can be obtained.
• This embodiment mode will describe electronic devices of the present invention, which include the light-emitting device described in Embodiment Mode 3 as part thereof.
• the electronic devices of the present invention each have the light-emitting element described in Embodiment Mode 1 or Embodiment Mode 2, and a display portion having a long lifetime.
• FIG. 8A illustrates a television device according to this embodiment mode, which includes a housing 9101, a support 9102, a display portion 9103, a speaker portion 9104, a video input terminal 9105, and the like.
• the display portion 9103 is formed by arranging similar light-emitting elements to those described in Embodiment Modes 1 and 2 in a matrix form.
• the light-emitting elements have a feature of high luminous efficiency and low power consumption. Further, there is a feature of a long lifetime. Since the display portion 9103 formed using the light-emitting element also has a similar feature, image quality is less deteriorated and low power consumption is achieved in this television device. Through such features, deterioration compensating function circuits and power supply circuits can be greatly reduced in number or in size in the television device; therefore, a reduction in the size and weight of the housing 9101 and the support 9102 can be achieved. Since low power consumption, improvement in image quality, and reduction in size and weight are achieved in the television device according to this embodiment mode, a product which is suitable for a living environment can be provided. [0126]
• FIG. 8B illustrates a computer according to this embodiment mode, which includes a main body 9201, a housing 9202, a display portion 9203, a keyboard 9204, an external connection port 9205, a pointing device 9206, and the like.
• the display portion 9203 is formed by arranging similar light-emitting elements to those described in Embodiment Modes 1 and 2 in a matrix form.
• the light-emitting elements have a feature of high luminous efficiency and low power consumption. Further, there is a feature of a long lifetime. Since the display portion ⁇
• FIG. 8C illustrates a cellular phone according to this embodiment mode, which includes a main body 9401, a housing 9402, a display portion 9403, an audio input portion 9404, an audio output portion 9405, operation keys 9406, an external connection port 9407, an antenna 9408, and the like.
• the display portion 9403 is formed by arranging similar light-emitting elements to those described in Embodiment Modes 1 and 2 in a matrix form.
• the light-emitting elements have a feature of high luminous efficiency and low power consumption. Further, there is a feature of a long lifetime.
• the display portion 9403 formed using the light-emitting element also has a similar feature, image quality is hardly deteriorated and low power consumption is achieved in this cellular phone.
• deterioration compensating function circuits and power supply circuits can be greatly reduced in number or in size in the cellular phone. Therefore, a reduction in the size and weight of the main body 9401 and the housing 9402 can be achieved. Since low power consumption, improvement in image quality, and reduction in size and weight are achieved in the cellular phone according to this embodiment mode, a product which is suitable for being carried can be provided. Further, a product having the display portion which has strong resistance to an impact from external when being carried can be provided. [0128]
• FIG. 8D illustrates a camera according to this embodiment mode, which includes a main body 9501, a display portion 9502, a housing 9503, an external ⁇
• the display portion 9502 is formed by arranging similar light-emitting elements to those described in Embodiment Modes 1 and 2 in a matrix form.
• the light-emitting elements have a feature of high luminous efficiency and low power consumption. Further, there is a feature of a long lifetime. Since the display portion 9502 formed using the light-emitting element also has a similar feature, image quality is hardly deteriorated and low power consumption is achieved in this camera.
• deterioration compensating function circuits and power supply circuits can be greatly reduced in number or in size in the camera. Therefore, a reduction in the size and weight of the main body 9501 can be achieved. Since low power consumption, improvement in image quality, and reduction in size and weight are achieved in the camera according to this embodiment mode, a product which is suitable for being carried can be provided. Further, a product having the display portion which has strong resistance to an impact from external when being carried can be provided. [0129]
• FIG. 9 illustrates an audio reproducing device according to this embodiment mode, specifically a car audio, which includes a main body 701, a display portion 702, and operation switches 703 and 704.
• the display portion 702 can be formed by using the light-emitting device (a passive matrix type or an active matrix type) shown in Embodiment Mode 3. Further, the display portion 702 may be also formed using a light-emitting device of a segment type. In any case, through the use of the light-emitting element according to the present invention, a display portion can be formed with the use of a vehicular power source (12 to 42 V). The display portion which has a longer lifetime and is bright can be formed while low power consumption thereof is achieved. Furthermore, this embodiment mode has shown an in-car audio system; however, the light-emitting device of the present invention may be also used for portable audio systems or audio systems for home use. [0130]
• FIG. 10 illustrates a digital player as one example of the audio reproducing device.
• the digital player illustrated in FIG. 10 includes a main body 710, a display portion 711, a memory portion 712, an operation portion 713, a pair of earphones 714, and the like. Note that a pair of headphones or a pair of wireless earphones can be used instead of the pair of earphones 714.
• the display portion 711 can be formed by using the light-emitting device (a passive matrix type or an active matrix type) shown in Embodiment Mode 3. Further, the display portion 711 may be also formed using a light-emitting device of a segment type.
• display can be also performed with a secondary battery (a nickel-hydrogen battery or the like).
• the display portion 711 which has a longer lifetime and is bright can be formed while low power consumption thereof is achieved.
• a hard disk or a nonvolatile memory is used as the memory portion 712.
• a NAND type nonvolatile memory with a recording capacity of 20 to 200 gigabytes (GBs) is used, and the operation portion 713 is operated, whereby an image or a sound (for example, music) can be recorded and reproduced.
• the display portions 704 and 711 display white characters on a black background so that power consumption can be suppressed. This is particularly effective for a portable audio system. [0131]
• an application range of the light-emitting device which is manufactured by applying the present invention is quite wide, and this light-emitting device can be applied to electronic devices of every field.
• an electronic device having a display portion which consumes low power and has high reliability can be manufactured.
• the light-emitting device to which the present invention is applied has a light-emitting element with high luminous efficiency, and the light-emitting device can be also used as a lighting device.
• One mode of using, as a lighting device, the light-emitting element to which the present invention is applied is described with reference to FIG. 11.
• FIG. 11 illustrates a liquid crystal display device in which the light-emitting device of the present invention is used as a backlight, as an example of the electronic device using the light-emitting device of the present invention.
• FIG. 11 includes a housing 901, a liquid crystal layer 902, a backlight 903, and a housing 904, in which the liquid crystal layer 902 is connected to a driver IC 905.
• the light-emitting device of the present invention is used for the backlight 903, and current is supplied to the backlight 903 through a terminal 906.
• the light-emitting device of the present invention When the light-emitting device of the present invention is used as the backlight of the liquid crystal display device, a backlight with high luminous efficiency can be obtained. Moreover, a long-lifetime backlight can be also obtained. Further, since the light-emitting device of the present invention is a lighting device of surface light emission and the enlargement of the light-emitting device is possible, the backlight can be made larger and the liquid crystal display device can also have a larger area. Furthermore, since the light-emitting device of the present invention is thin and consumes less power, reduction in thickness and power consumption of the display device is possible. [0135]
• FIG. 12 illustrates an example in which the light-emitting device to which the present invention is applied is used as a desk lamp, which is a lighting device.
• the desk lamp illustrated in FIG. 12 includes a housing 2001 and a light source 2002.
• the light-emitting device of the present invention is used as the light source 2002. Since the light-emitting device of the present invention has a long lifetime, the desk lamp can also have a long lifetime.
• FIG. 13 illustrates an example of using the light-emitting device to which the present invention is applied as a lighting device 3001 in the room. Since the light-emitting device of the present invention can be enlarged, the light-emitting device can be used as a large-area lighting device. Moreover, since the light-emitting device of the present invention has a long lifetime, the lighting device can also have a long lifetime. Thus, a television device 3002 according to the present invention similar to the television device described with reference to FIG. 8A can be installed in the room using, as the lighting device 3001, the light-emitting device to which the present invention is applied so that pubic broadcasting and movies can be enjoyed. In such a case, since both the television device and the lighting device have long lifetimes, it is unnecessary to often buy new lighting device or television device (that is, the number of replacing is small) and it is possible to reduce a load to the environment.
• This embodiment will specifically describe a light-emitting element of the present invention with reference to FIG. 14. Note that a light-emitting element 1, a light-emitting element 2, and a comparative light-emitting element 3 were formed over the same substrate. Structural formulas of organic compounds used in Embodiment 1 are shown below.
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate 2201 by a sputtering method to form a first electrode 2202. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode 2202 was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode 2202 was formed came to the lower side.
• a vacuum evaporation apparatus After the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa, 4,4'-bis[N-(l-naphtyl)-N-phenylamino]biphenyl (abbreviation: NPB) and molybdenum (VI) oxide were co-evaporated on the first electrode 2202 to form a layer 2211 containing the composite material.
• the co-evaporation method is an evaporation method in which evaporations from a plurality of evaporation sources are performed at the same time in one treatment chamber.
• a layer 2212 for controlling the carrier transport was formed over the layer 2211 containing a composite material.
• the layer 2212 for controlling the carrier transport was formed by co-evaporating
• NPB 4,4'-bis[N-(l-naphthyl)-iV-phenylamino]biphenyl
• OXD-7 l,3-bis[5-(p-fe ⁇ t-butyrphenyl)-l,3,4-oxadiazol-2-yl]benzene
• NPB 4,4'-bis[JV-(l-naphthyl)-JV-phenylamino]biphenyl
• YGA2S (abbreviation : YGA2S) were co-evaporated to form the light-emitting layer 2214 with a thickness of 30 nm.
• an electron-transporting layer 2215 was formed over the light-emitting layer 2214 by an evaporation method using resistance heating.
• tris(8-quinolinolato)aluminum(III) (abbreviation: AIq) was formed over the light-emitting layer 2214 so as to have a thickness of 20 nm to form a first electron-transporting layer 2231.
• bathophenanthroline (abbreviation: BPhen) was formed over the first electron-transporting layer 2231 so as to have a thickness of
• LiF lithium fluoride
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode 2204. In this manner, a light-emitting element 1 was manufactured.
• the light-emitting element 1 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• the light-emitting element 2 of the present invention was also put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air, in a similar manner to the light-emitting element 1. Then, the operating characteristics of the light-emitting element were measured. The measurement was performed at a room temperature
• the comparative light-emitting element 3 having a structure in which the layer 2212 for controlling the carrier transport in the above light-emitting element 1 and light-emitting element 2 is not provided was formed. The manufacturing method is described below.
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate by a sputtering method to form a first electrode. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode was formed came to the lower side.
• the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa
• NPB 4,4'-bis[N-(l-naphtyl)-N-phenylamino]biphenyl
• (VI) oxide were co-evaporated on the first electrode to form a layer containing a composite material.
• NPB 4,4'-bis[N-(l-naphthyl)-iV-phenylamino]biphenyl
• LiF lithium fluoride
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode. In this manner, a comparative light-emitting element 3 was manufactured.
• the light-emitting element 3 obtained through the above process was also put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air, in a similar manner to the light-emitting element 1. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C). [0160]
• FIG. 15 illustrates the current density vs. luminance characteristics of the light-emitting element 1, the light-emitting element 2, and the comparative light-emitting 3.
• FIG. 16 illustrates the voltage vs. luminance characteristics thereof.
• FIG. 17 illustrates the luminance vs. current efficiency characteristics thereof.
• FIG. 18 illustrates the emission spectra thereof obtained at a current supply of 1 mA.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 1 at the luminance of 950 cd/m 2 were 4.6 cd/A, 5.4 V, 20.7 mA/cm 2 , and 2.6 lm/W, respectively.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 2 at the luminance of 950 cd/m were 6.0 cd/A, 5.4 V, 15.7 mA/cm , and 3.5 lm/W, respectively.
• a current efficiency, a voltage, a current density, and a power efficiency of the comparative light-emitting element 3 at the luminance of 850 cd/m 2 were 3.6 cd/A, 5.2 V, 23.5 mA/cm 2 , and 2.2 lm/W, respectively.
• FIG. 19 illustrates the result of a continuous lighting test in which the light-emitting element 1 and the comparative light-emitting element 3 were continuously driven at constant current with the initial luminance set at 1000 cd/m 2 .
• the vertical axis indicates the relative luminance (normalized luminance) on the assumption that 1000 cd/m 2 is 100 %.
• the layer for controlling the carrier transport of the present invention has almost the same lifetime as the comparative light-emitting element 3 in which the layer for controlling the carrier transport is not provided. This means that the layer for controlling the carrier transport does not affect the lifetime but improves the current efficiency of the light-emitting element.
• the dipole moment of OXD-7 used in the light-emitting element 1 and the light-emitting element 2 was calculated.
• DFT density functional theory
• the dipole moment of OXD-7 with an optimized structure was calculated to be 3.78 debye.
• the accuracy of calculation of the DFT is higher than that of a Hartree-Fock (HF) method which does not consider electron correlation.
• HF Hartree-Fock
• MP method of perturbation
• NPB and OXD-7 which were used in the layer for controlling the carrier transport in the light-emitting element 1 and the light-emitting element 2 manufactured in this embodiment, were evaluated by using the cyclic voltammetry (CV) measurement.
• the ionization potentials of NPB and OXD-7 were obtained from the CV measurement results. Note that an electrochemical analyzer (ALS model 600A or 600C, product of BAS Inc.) was used for the measurement. [0168]
• a platinum electrode (a PTE platinum electrode, product of BAS Inc.) was used as a working electrode; a platinum electrode (a VC-3 Pt counter electrode (5 cm), product of BAS Inc.) was used as an auxiliary electrode; and an AgZAg + electrode (an RE5 nonaqueous solvent reference electrode, product of BAS Inc.) was used as a reference electrode.
• the CV measurement was conducted at room temperature (20 to 25 0 C).
• potential energy (eV) of the reference electrode (AgZAg + electrode) used in this embodiment with respect to the vacuum level was calculated. That is, the Fermi level of the AgZAg + electrode was calculated. It is known that the oxidation potential of ferrocene in methanol is +0.610 V with respect to a standard hydrogen electrode (Reference: Christian R. Goldsmith et al., J. Am. Chem. Soc, Vol. 124, No. 1, p ⁇ .83-96, 2002). The oxidation potential of ferrocene in methanol measured by using the reference electrode used in this embodiment was found to be +0.20 V vs. AgZAg + . Therefore, it was confirmed that the potential energy of the reference electrode used in this embodiment was lower than that of the standard hydrogen electrode by 0.41 eV. [0170]
• OXD-7 was at least greater than or equal to 5.8 eV.
• OXD-7 can be preferably used for the layer for controlling the carrier transport of the present invention.
• the oxidation characteristics of NPB were evaluated by cyclic voltammetry (CV) measurement.
• the scan rate was set at 0.1 V/sec.
• FIG. 37 illustrates the measurement result.
• the measurement of the oxidation characteristics was performed by the steps of: scanning the potential of the working electrode with respect to the reference electrode in the ranges of -0.20 V to 0.80 V, and then 0.80 V to -0.20 V.
• an oxidation peak potential E p3 appeared at 0.45 V. Therefore, a difference in oxidation peak potential between NPB and OXD-7 measured in the Measurement Example 1 is greater than or equal to 0.55 V. Thus, a difference between the oxidation peak potential of NPB and that of OXD-7 is greater than or equal to 0.5 V, which means that a difference between an ionization potential of NPB and that of OXD-7 is at least greater than or equal to 0.5 eV.
• OXD-7 can be preferably used for the layer for controlling the carrier transport. That is, the layer containing NPB which is an organic compounds having a hole-transporting property and OXD-7 functions as the layer for controlling the carrier transport.
• This embodiment will specifically describe a light-emitting element of the present invention with reference to FIG. 20. Note that a light-emitting element 4 and a light-emitting element 5 manufactured in Embodiment 2 were formed over the same substrate. [0178] (Manufacture of light-emitting element 4)
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate 2201 by a sputtering method, and a first electrode 2202 was formed. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode 2202 was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode 2202 was formed came to the lower side.
• a vacuum evaporation apparatus After the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 " Pa, 4,4'-bis[iV-(l-naphtyl)-iV-phenylamino]biphenyl (abbreviation: NPB) and molybdenum (VI) oxide were co-evaporated on the first electrode 2202 to form a layer 2211 containing a composite material.
• a layer 2212 for controlling the carrier transport was formed over the layer 2211 containing a composite material.
• the layer 2212 for controlling the carrier transport was formed by co-evaporating
• NPB 4,4'-bis[N-(l-naphthyl)-iV-phenylammo]biphenyl
• OXD-7 l,3-bis[5-(p-tert-butylphenyl)-l,3,4-oxadiazol-2-yl]benzene
• a light-emitting layer 2214 was formed over the layer 2212 for controlling the carrier transport.
• an electron-transporting layer 2215 was formed over the light-emitting layer 2214 by an evaporation method using resistance heating.
• tris(8-quinolinolato)aluminum(III) (abbreviation: AIq) was formed over the light-emitting layer 2214 so as to have a thickness of 20 nm to form a first electron- transporting layer 2231.
• bathophenanthroline (abbreviation: BPhen) was formed over the first electron-transporting layer 2231 so as to have a thickness of 10 nm to form a second electron-transporting layer 2232.
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode 2204. In this manner, a light-emitting element 4 was manufactured.
• the light-emitting element 4 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C). [0186] (Manufacture of light-emitting element 5)
• the light-emitting element 5 of the present invention was also put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air, in a similar manner to the light-emitting element 4. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• FIG. 21 illustrates the current density vs. luminance characteristics of the light-emitting element 4 and the light-emitting element 5.
• FIG. 22 illustrates the voltage vs. luminance characteristics thereof.
• FIG. 23 illustrates the luminance vs. current efficiency characteristics thereof.
• FIG. 24 illustrates the emission spectra thereof obtained at a current supply of 1 mA.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 4 at the luminance of 980 cd/m 2 were 4.5 cd/A, 4.8 V, 21.7 rnA/cm 2 , and 3.0 lm/W, respectively.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 5 at the luminance of 940 cd/m 2 were 5.7 cd/A, 4.6 V, 16.5 rnA/cm 2 , and 3.9 lm/W, respectively.
• the dipole moment of OXD-7 used for the light-emitting element 4 and the light-emitting element 5 is 3.78 debye as calculated in Embodiment 1, and the ionization potential of OXD-7 is greater than or equal to 5.8 eV.
• the difference in ionization potential between NPB and OXD-7 is greater than or equal to 0.5 eV.
• OXD-7 used for the light-emitting element 4 and the light-emitting element 5 can be preferably used for the layer for controlling the carrier transport. That is, the layer containing NPB which is an organic compounds having a hole-transporting property and OXD-7 functions as the layer for controlling the carrier transport.
• This embodiment will specifically describe a light-emitting element of the present invention with reference to FIG. 14. Note that a light-emitting element 6, a light-emitting element 7, and a comparative light-emitting element 8 manufactured in
• Embodiment 3 were formed over the same substrate.
• a structural formula of an organic compound used in Embodiment 3 is shown below. [0197]
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate 2201 by a sputtering method, and a first electrode 2202 was formed. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode 2202 was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode 2202 was formed came to the lower side.
• a vacuum evaporation apparatus After the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa, 4,4'-bis[N-(l-naphtyl)-iV-phenylamino]biphenyl (abbreviation: NPB) and molybdenum (VI) oxide were co-evaporated on the first electrode 2202 to form a layer 2211 containing a composite material.
• a layer 2212 for controlling the carrier transport was formed over the layer 2211 containing a composite material.
• the layer 2212 for controlling the carrier transport was formed by depositing 4,4'-bis [JV-(I -naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-l,2,4-triazole (abbreviation: TAZOl) at a thickness of 10 nm by a co-evaporation method.
• NPB 4,4-bis [N-(I -naphthyl)-JV-phenylamino]biphenyl
• an electron-transporting layer 2215 was formed over the light-emitting layer 2214 by an evaporation method using resistance heating.
• tris(8-quinolinolato)aluminum(III) (abbreviation: AIq) was formed over the light-emitting layer 2214 so as to have a thickness of 20 nm to form a first electron-transporting layer 2231.
• bathophenanthroline (abbreviation: BPhen) was formed over the first electron-transporting layer 2231 so as to have a thickness of
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode 2204. In this manner, a light-emitting element 6 was manufactured.
• the light-emitting element 6 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting element was sealed without exposing to atmospheric air. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• the light-emitting element 7 of the present invention was also put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air, in a similar manner to the light-emitting element 6. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• the comparative light-emitting element 8 having a structure in which the layer 2212 for controlling the carrier transport in the above light-emitting element 6 and light-emitting 7 is not provided was formed. The manufacturing method is described below.
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate by a sputtering method, and a first electrode was formed. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode was formed came to the lower side.
• the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa
• NPB 4,4'-bis[N " -(l-naphtyl)-N-phenylamino]biphenyl (abbreviation: NPB) and molybdenum
• (VI) oxide were co-evaporated on the first electrode, resulting in the formation of the layer containing a composite material.
• the thickness was 30 nm, and the evaporation rate was controlled so that the weight ratio of NPB to molybdenum (VI) oxide could be
• NPB 4,4'-bis[iV-(l-naphthyl)-iV-phenylamino]biphenyl
• LiF lithium fluoride
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode. In this manner, a comparative light-emitting element 8 was manufactured.
• the light-emitting element 8 obtained through the above process was also put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air, in a similar manner to the light-emitting element 6. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• FIG. 25 illustrates the current density vs. luminance characteristics of the light-emitting element 6, the light-emitting element 7, and the comparative light-emitting 8.
• FIG. 26 illustrates the voltage vs. luminance characteristics thereof.
• FIG. 27 illustrates the luminance vs. current efficiency characteristics thereof.
• FIG. 28 illustrates the emission spectra thereof obtained at a current supply of 1 mA.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 6 at the luminance of 810 cd/m 2 were 3.3 cd/A, 5.8 V, 24.2 r ⁇ A/cm 2 , and 1.8 lm/W, respectively.
• a current efficiency, a voltage, a current density, and a power efficiency of the comparative light-emitting element 8 at the luminance of 1040 cd/m 2 were 2.8 cd/A, 5.8 V, 36.6 mA/cm 2 , and 1.5 lm/W, respectively.
• the light-emitting element 6 and the light-emitting element 7 in which the layer for controlling the carrier transport of the present invention is provided as compared with the comparative light-emitting element 8 in which the layer for controlling the carrier transport is not provided.
• the driving voltage of the light-emitting element 6 and the light-emitting element 7 is not much different from that of the comparative light-emitting element 8 without the layer for controlling the carrier transport, the light-emitting elements 6 and 7 show high power efficiency, originating from their high current efficiency.
• the light-emitting element of the present invention consumes low power.
• the dipole moment of TAZOl used in the light-emitting element 6 and the light-emitting element 7 was calculated.
• the structure of a ground state of TAZOl was optimized by density functional theory (DFT) at a level of B3LYP/6-311(d,p).
• DFT density functional theory
• the dipole moment of TAZOl with an optimized structure was calculated to be 5.87 debye.
• the calculation was carried out in a similar way shown in Embodiment 1. [0224]
• the oxidation characteristics of TAZOl were evaluated by cyclic voltammetry (CV) measurement.
• the scan rate was set at 0.1 V/sec.
• FIG. 39 illustrates the measurement result.
• the measurement of the oxidation characteristics was performed by the steps of: scanning the potential of the working electrode with respect to the reference electrode in the ranges of -0.47 V to -1.50 V, and then 1.50 V to -0.47 V. [0226]
• an oxidation peak potential E p3 of NPB is 0.45 V
• a difference in oxidation peak potential of TAZOl measured in Measurement Example 3 is greater than or equal to 0.55 V. Therefore, a difference between the oxidation peak potential of NPB and the oxidation peak potential of TAZOl is greater than or equal to 0.5 V. Accordingly, a difference between an ionization potential of NPB and that of TAZOl is at least greater than or equal to 0.5 eV.
• TAZOl can be preferably used for the layer for controlling the carrier transport. That is, it was found that a layer containing NPB and TAZOl which are organic compounds having a hole-transporting property functions as the layer for controlling the carrier transport. In particular, since a dipole moment of TAZOl is large, TAZOl is preferable as a second organic compound which is used for the layer for controlling the carrier transport.
• This embodiment will specifically describe a light-emitting element of the present invention with reference to FIG. 20. Note that a light-emitting element 9 and a light-emitting element 10 manufactured in Embodiment 4 were formed over the same substrate. [0231]
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate 2201 by a sputtering method, and a first electrode 2202 was formed. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode 2202 was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode 2202 was formed came to the lower side.
• a vacuum evaporation apparatus After the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa, 4,4'-bis[JV-(l-naphtyl)-N-phenylamino]biphenyl (abbreviation: ⁇ PB) and molybdenum (VI) oxide were co-evaporated on the first electrode 2202 to form a layer 2211 containing a composite material.
• a layer 2212 for controlling the carrier transport was formed over the layer 2211 containing a composite material.
• the layer 2212 for controlling the carrier transport was formed by depositing 4,4'-bis [N-(I -naphthyl)-iV-phenylammo]biphenyl (abbreviation: NPB) and 3-(4-biphenylyl)-4-phenyl-5-(4-fert-butylphenyl)-l,2,4-triazole (abbreviation: TAZOl) at a thickness of 10 nm by a co-evaporation method.
• a light-emitting layer 2214 was formed over the layer 2212 for controlling the carrier transport.
• YGA2S (abbreviation : YGA2S) were co-evaporated to form the light-emitting layer 2214 with a thickness of 30 nm.
• an electron-transporting layer 2215 was formed over the light-emitting layer 2214 by an evaporation method using resistance heating.
• AIq tris(8-quinolinolato)aluminum(III)
• BPhen bathophenanthroline
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode 2204.
• a light-emitting element 9 was manufactured.
• the light-emitting element 9 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• the light-emitting element 10 of the present invention was also put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air, in a similar manner to the light-emitting element 9. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• FIG. 29 illustrates the current density vs. luminance characteristics of the light-emitting element 9 and the light-emitting element 10.
• FIG. 30 illustrates the voltage vs. luminance characteristics thereof.
• FIG. 31 illustrates the luminance vs. current efficiency characteristics thereof.
• FIG. 32 illustrates the emission spectra thereof obtained at a current supply of 1 mA.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 10 at the luminance of 930 cd/m 2 were 4.8 cd/A, 5.0 V, 19.5 mA/cm 2 , and 3.0 lm/W, respectively.
• light-emitting element 10 is 5.87 debye as calculated in Embodiment 3 and an ionization potential of TAZOl is greater than or equal to 5.8 eV.
• the difference between the ionization potential of NPB and that of TAZOl is greater than or equal to 0.5 eV.
• TAZOl used for the light-emitting element 9 and the light-emitting element 10 can be preferably used for the layer for controlling the carrier transport. That is, it is confirmed that a layer containing NPB which is an organic compound having a hole-transporting property and TAZOl functions as the layer for controlling the carrier transport.
• Embodiment 5 This embodiment will specifically describe a light-emitting element of the present invention with reference to FIG. 14. Note that a light-emitting element 11, a light-emitting element 12, and a comparative light-emitting element 13 manufactured in Embodiment 5 were formed over the same substrate. A structural formula of an organic compound used in Embodiment 5 is shown below. [0250] [CHEMICALFORMULAS]
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate 2201 by a sputtering method to form a first electrode 2202. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode 2202 was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode 2202 was formed came to the lower side.
• the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa
• (VI) oxide were co-evaporated on the first electrode 2202, giving the layer 2211 containing a composite material.
• a layer 2212 for controlling the carrier transport was formed over the layer 2211 containing a composite material.
• the layer 2212 for controlling the carrier transport was formed by depositing 4,4'-bis[iV-(l-naphthyl)-JV-phenylamino]biphenyl (abbreviation: NPB) and bathocuproine (abbreviation: BCP) at a thickness of 10 nm by a co-evaporation method.
• NPB 4,4'-bis[iV-(l-naphthyl)-JV-phenylamino]biphenyl
• BCP bathocuproine
• a film of 4,4'-bis[N-(l-naphthyl)-iV-phenylamino]biphenyl (abbreviation: ⁇ PB) was formed so as to have a thickness of 20 nm to form a hole-transporting layer 2213.
• a light-emitting layer 2214 was formed over the hole-transporting layer
• an electron- transporting layer 2215 was formed over the light-emitting layer 2214 by an evaporation method using resistance heating.
• tris(8-quinolinolato)aluminum(III) (abbreviation: AIq) was formed over the light-emitting layer 2214 so as to have a thickness of 20 nm to form a first electron-transporting layer 2231.
• bathophenanthroline (abbreviation: BPhen) was formed over the first electron-transporting layer 2231 so as to have a thickness of 10 nm to form a second electron-transporting layer 2232.
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode 2204. In this manner, a light-emitting element 11 was manufactured.
• the light-emitting element 11 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C).
• the light-emitting element 12 of the present invention was also put into a glove box containing a nitrogen so that the light-emitting __
• the light-emitting element 12 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting element was sealed in order not to be exposed to atmospheric air. Then, the operating characteristics of the light-emitting element were measured. Note that the measurement was performed at a room temperature (atmosphere kept at 25 0 C). [0263] (Manufacture of comparative light-emitting element 13)
• a comparative light-emitting element 13 having a structure in which the layer 2212 for controlling the carrier transport in the above light-emitting element 11 and light-emitting 12 is not provided was formed.
• the manufacturing method is described below.
• a film of indium tin oxide containing silicon oxide was formed over a glass substrate by a sputtering method to form a first electrode. Note that the thickness was 110 nm and the electrode area was 2 mm x 2 mm.
• the substrate on which the first electrode was formed was fixed to a substrate holder that was provided in a vacuum evaporation apparatus, such that the surface on which the first electrode was formed came to the lower side.
• a vacuum evaporation apparatus After the pressure of the vacuum evaporation apparatus was reduced to be approximately 10 "4 Pa, 4,4'-bis[iV-(l-naphtyl)-iV-phenylamino]biphenyl (abbreviation: NPB) and molybdenum (VI) oxide were co-evaporated on the first electrode to form a layer containing a composite material.
• NPB 4,4'-bis[iV-(l-naphthyl)-iV-phenylammo]biphenyl
• N 5 N'-bis[4-(9H-carbazol-9-yl)phenyl]-NX-diphenylstilbene-4,4'-diamine (abbreviation : YGA2S) were co-evaporated to form the light-emitting layer at a thickness of 30 nm.
• an electron-transporting layer was formed over the light-emitting layer by an evaporation method using resistance heating.
• tris(8-quinolinolato)aluminurn(III) (abbreviation: AIq) was formed over the light-emitting layer so as to have a thickness of 20 nm to form a first electron-transporting layer.
• bathophenanthroline (abbreviation: BPhen) was formed over the first electron-transporting layer so as to have a thickness of 10 nm to form a second electron-transporting layer.
• LiF lithium fluoride
• a film of aluminum was formed so as to have a thickness of 200 nm by an evaporation method using resistance heating to form a second electrode. In this manner, a comparative light-emitting element 13 was manufactured.
• the light-emitting element 13 of the present invention obtained through the above process was put into a glove box containing a nitrogen so that the light-emitting ⁇ A
• FIG. 33 illustrates the current density vs. luminance characteristics of the light-emitting element 11, the light-emitting element 12, and the comparative light-emitting 13.
• FIG. 34 illustrates the voltage vs. luminance characteristics thereof.
• FIG. 35 illustrates the luminance vs. current efficiency characteristics thereof.
• FIG. 36 illustrates the emission spectra thereof obtained at a current supply of 1 mA.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 11 at the luminance of 1130 cd/m 2 were 5.2 cd/A, 5.4 V, 21.9 mA/cm 2 , and 3.0 lm/W, respectively.
• a current efficiency, a voltage, a current density, and a power efficiency of the light-emitting element 12 at the luminance of 1080 cd/m 2 were 5.9 cd/A, 5.4 V, 18.4 mA/cm 2 , and 3.4 lm/W, respectively.
• a current efficiency, a voltage, a current density, and a power efficiency of the comparative light-emitting element 13 at the luminance of 740 cd/m 2 were 3.6 cd/A, 4.8 V, 20.4 mA/cm 2 , and 2.3 lm/W, respectively.
• FIG. 40 illustrates the measurement result.
• the measurement of the oxidation characteristics was performed by the steps of: scanning the potential of the working electrode with respect to the reference electrode in the ranges of -0.20 V to -1.60 V, and then 1.60 V to -0.20 V.
• a peak which corresponds to the oxidation of BCP did not appear even when scanning was performed at least up to 1.0 V. Further, even if ?6
• an oxidation peak potential E p3 of NPB is 0.45 V
• a difference from an oxidation peak potential of BCP measured in Measurement Example 4 is greater than or equal to 0.55 V. Therefore, a difference between the oxidation peak potential of NPB and that of BCP is greater than or equal to 0.5 V. Accordingly, the difference between the ionization potential of NPB and that of BCP is greater than, or equal to 0.5 eV.
• BCP can be preferably used for the layer for controlling the carrier transport.
• a layer containing NPB which is an organic compound having a hole-transporting property and BCP functions as the layer for controlling the carrier transport.

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