WO2008044440A1 - Dispositif électroluminescent - Google Patents

Dispositif électroluminescent Download PDF

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Publication number
WO2008044440A1
WO2008044440A1 PCT/JP2007/068150 JP2007068150W WO2008044440A1 WO 2008044440 A1 WO2008044440 A1 WO 2008044440A1 JP 2007068150 W JP2007068150 W JP 2007068150W WO 2008044440 A1 WO2008044440 A1 WO 2008044440A1
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WO
WIPO (PCT)
Prior art keywords
light
substrate
emitting element
electrode
twenty
Prior art date
Application number
PCT/JP2007/068150
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English (en)
Japanese (ja)
Inventor
Kazuo Aoki
Takekazu Ujiie
Masashi Matsuda
Original Assignee
Koha Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koha Co., Ltd. filed Critical Koha Co., Ltd.
Publication of WO2008044440A1 publication Critical patent/WO2008044440A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • the present invention relates to a light emitting device, and more particularly, to a light emitting device with improved light extraction efficiency.
  • LEDs with low power consumption are expected to be highly demanded for lighting in the future.
  • the tens of mA light emitted by conventional LEDs is not enough.
  • the current usage area requires several hundred mA or several A. Come.
  • a Ga 2 O substrate As a conventional light emitting device, a Ga 2 O substrate, an n-type cladding layer, an active layer, and a p-type cladding are used.
  • a light-emitting element that includes a head layer (for example, Patent Document 1).
  • a light-emitting element having a vertical structure in which a GaO substrate side is also used as a light extraction surface can be obtained by using a colorless and transparent conductor that transmits light in the visible region to the ultraviolet region as a substrate.
  • Patent Document 1 Japanese Patent Laid-Open No. 2004-56098
  • the light extraction efficiency from the Ga 2 O substrate side deteriorates and the light emission efficiency is improved.
  • an object of the present invention is to emit light from the visible region to the ultraviolet region using a Ga 2 O substrate.
  • An object of the present invention is to provide a light-emitting element that can be taken out from the substrate side and has excellent light extraction efficiency from the substrate side with little increase in current density.
  • the present invention provides a GaO substrate and a GaO substrate on the GaO substrate.
  • a light-emitting element characterized by including an epitaxial layer having a concavo-convex portion formed.
  • the Ga 2 O substrate is formed with a thickness corresponding to the size.
  • the light emitting element described in the above may be used.
  • the GaO substrate has an n-electrode on the opposite side to the epitaxial layer.
  • the light emitting device according to [1] may be used.
  • the GaO substrate has an n-electrode on the same side as the epitaxial layer.
  • the light emitting device according to [1] may be used.
  • the epitaxial layer may be epitaxially grown directly on the GaO substrate.
  • the light-emitting device according to [1], wherein the light-emitting element is formed by laminating an epitaxial layer.
  • the present invention provides a GaO substrate having a predetermined size and a thickness corresponding to the predetermined size, and an n clad layer formed on the GaO substrate.
  • a light emitting device including an active layer and a p-cladding layer.
  • light from the visible region to the ultraviolet region is also emitted from the substrate side using a GaO substrate.
  • a light-emitting element that can be extracted and has excellent light extraction efficiency from the substrate side with little increase in current density can be provided.
  • FIG. 1 shows a light-emitting element having a double heterostructure according to the first embodiment of the present invention. This shows the structure.
  • FIG. 2 is a plan view of the n-electrode 17 of the light-emitting element 1 according to the first embodiment as viewed from above in FIG.
  • FIG. 3A is a manufacturing process diagram showing the formation method of the reflective layer 15 and the p-electrode 16 formed on the p-cladding layer 14 in order, and is an etching process of the p-cladding layer 14.
  • FIG. 3B is a diagram of the manufacturing process, which is a photolithography process.
  • FIG. 3C is a manufacturing process diagram of the above, and is a film forming process of Ag as the reflective layer 15
  • FIG. 3D is a manufacturing process diagram, and is a lift-off process.
  • FIG. 3E is a diagram of the manufacturing process described above, and is a process of forming an ohmic electrode Ni / Au as the p-electrode 16.
  • FIG. 3F is a manufacturing process diagram of the above, and is a film formation process of Ag.
  • FIG. 4 is a diagram showing in detail another embodiment of the groove 14b formed in the p-cladding layer 14.
  • FIG. 5 shows the structure of a flip-type light emitting device according to the second embodiment of the present invention.
  • FIG. 6 is a diagram showing a two-dimensional simulation result of the current density distribution flowing through the active layer of the light emitting device.
  • FIG. 7A is a diagram showing a light-emitting element 3 having a configuration in which an n-electrode 17 is formed on an n-cladding layer 12 for comparison with the light-emitting element 2 according to the second embodiment. is there.
  • FIG. 7B is a diagram showing a light-emitting element 101 having a horizontal electrode structure using a sapphire substrate that has been conventionally used.
  • FIG. 7C is a diagram showing a flip-type light emitting element 102 using a sapphire substrate that has been conventionally used.
  • FIG. 7D is for comparison with the light-emitting element 1 according to the first embodiment, and the GaO substrate 10 and the buffer layer 11 of the light-emitting element 1 according to the first embodiment are lifted off. But
  • FIG. 11 shows a light-emitting element 103 having no configuration.
  • FIG. 8 is a plan view showing a state in which the light-emitting element 1 according to the first embodiment can be emitted. It is a figure which shows the structure made into the mounting state.
  • FIG. 9A shows the light-emitting element 1 according to the first embodiment shown above mounted.
  • FIG. 9B is a graph showing the dependence of the optical output current density on the comparison of the current density and the optical output.
  • FIG. 10 is a plan view of the n-electrode 17 in the case where the light emitting element is formed in a rectangle having a side of 3.4 mm as viewed from above in FIG.
  • FIG. 11 shows the thickness of the Ga 2 O substrate 10 when the light emitting device according to the fourth embodiment emits light.
  • FIG. 12 shows a case where an uneven portion is formed on the substrate surface of the GaO substrate 10 on the active layer 13 side.
  • FIG. 13A is a diagram showing a mounting state in the case of a large-area light emitting device such as the light emitting device according to the fourth embodiment, and is an upper plan view showing an n-electrode arrangement .
  • FIG. 13B is a diagram showing a mounted state of the light emitting element in the case of having the n-electrode arrangement of FIG. 13A.
  • FIG. 13C is a diagram showing a mounted state of the light emitting element in the case of having the n-electrode arrangement of FIG. 13A.
  • FIG. 13D is a diagram showing a mounted state of the light-emitting element when the n-electrode arrangement in FIG. 13A has no n-electrode at the center and n-electrodes 17 only at the four corners.
  • FIG. 1 shows the structure of a light-emitting element having a double heterostructure according to the first embodiment of the present invention.
  • Light-emitting element 1 is formed on the bottom surface of GaO substrate 10 on GaO substrate 10.
  • Buffer layer 11 made of AlGa-N (where 0 ⁇ X ⁇ 1), n-AlGaN (where 0 ⁇ z ⁇ 1) force is formed on the lower surface of the buffer layer 11, n-cladding layer 12, n Clad layer 1
  • P-clad layer made of p-AlGaN (where 0 ⁇ ⁇ 1, p> z)
  • the reflective layer 15 formed on the lower surface of the p-cladding layer 14 and the p-electrode 16 formed on the lower surface of the reflective layer 15 are sequentially stacked.
  • the buffer layer 11, the n-clad layer 12, the active layer 13, and the p-clad layer 14 are formed as an epitaxial layer.
  • the epitaxy layer may be epitaxially grown directly on the GaO substrate 10.
  • gallium oxide substrate EG Villora et al. / Journal of Crystal Growth 270 (2004) 420-426
  • it has high transmittance from the infrared to the ultraviolet region. It is also effective as a bonded substrate for GaAlAs, GaP, or AlGalnP epitaxial layers.
  • n electrode 17 made of Ti / A is formed on the upper surface of the Ga 2 O substrate 10.
  • the pole 17 is composed of an outer Jn electrode 17a and an inner Jn electrode 17b, and the inner Jn electrode 17b has a pad reflection layer 18 formed of Ag or the like that reflects the inner light and an upper portion thereof.
  • An insulating layer 19 made of SiO is formed to suppress the concentration of current flowing directly under the inner n-electrode 17b.
  • Ga 2 O substrate 10 As the Ga 2 O substrate 10, a / 3-—Ga 2 O single crystal substrate having a specific resistance of 0.1 ⁇ ′ cm or less was used.
  • the thickness is set in the range of 100 ⁇ m to 400 ⁇ m
  • the band gap energy of the n-clad layer 12 made of n-AlGaN is In G
  • the band gap energy of the layer 14 is the same as that of the active layer 13 made of InGaN.
  • the structure of the light-emitting element can take a heterostructure, MQW structure, or the like.
  • FIG. 2 is a plan view of the n-electrode 17 of the light-emitting element 1 according to the first embodiment as viewed from above in FIG.
  • the light-emitting element 1 has a substantially rectangular shape with one side L1 of about 340 m, and, as shown in FIG. 2, an outer n-electrode 17a having a width W1 of 10 Hm, a pad shape with a diameter of 90 ⁇ m, An inner ⁇ electrode 17b is formed.
  • the n electrode 17 is composed of an outer Jn electrode 17a and an inner Jn electrode 17b, and is formed by laminating Ti and A1 from the GaO substrate 10 side. If necessary, further on A1
  • the n-electrode 17 is formed in an open loop shape by connecting two annular outer n-electrodes 17 a surrounding the inner n-electrode 17 b with a connecting portion 17 c.
  • the distance D2 is 45 m
  • the distance D3 is 30 m
  • the distance D4 is 30 m.
  • FIG. 3 is a manufacturing process diagram showing a method of forming the reflective layer 15 and the p-electrode 16 formed on the p-cladding layer 14 in the order of steps.
  • the arrangement and the vertical direction shown in FIG. 1 are shown in the opposite direction, and the layers above the active layer 13 in FIG. 1 are not shown.
  • FIG. 3A shows an etching process of the p-cladding layer 14.
  • a groove portion 14b for forming the uneven portion 14a of the p-cladding layer 14 is formed in a predetermined shape.
  • the groove 14b has a predetermined groove width.
  • etching is performed to a predetermined depth by a dry etching process.
  • the predetermined depth d is preferably 0.lt ⁇ d ⁇ 0.9t, where t is the thickness of the p-clad layer 14.
  • the groove pitch P1 is preferably several tens of nm to several tens of inches.
  • the angle ⁇ of the groove can be 45 °, or the force S can be V-shaped without a bottom.
  • the resist mask is removed. It is preferable to optimize the shape, depth, and pitch of the uneven portion 14a in consideration of the properties of light waves (interference, diffraction, etc.).
  • the shape of the groove may be an uneven shape, a sawtooth shape, a lens shape, or the like.
  • FIG. 3B shows a photolithography process. After coating the resist 140 on the upper surface of the p-cladding layer 14, the resist 140 in the groove 14b is removed with a photomask having a predetermined pattern.
  • FIG. 3C shows a film forming process of Ag as the reflective layer 15.
  • Agl41 is deposited on the entire surface of the p-cladding layer 14.
  • FIG. 3D shows a lift-off process.
  • Agl41 other than Agl41 in the groove 14b is removed.
  • Agl 41 remaining in the groove 14b is the reflective layer 15 shown in FIG.
  • FIG. 3E shows a film forming process of the ohmic electrode Ni / Au as the p electrode 16.
  • Ni and Au are deposited sequentially by vapor deposition, sputtering, PVD, etc. Through the steps so far, the reflective layer 15 and the p-electrode 16 shown in FIG. 1 are formed.
  • FIG. 3F shows an Ag deposition process. Since the reflection layer 15 completed in FIG. 3E is not formed except for the groove 14b, Agl42 is further deposited on the p-electrode 16 to complement it. This step is added as necessary. In addition, when using Rh having an ohmic property and high reflectivity with the p-cladding layer 14, the film may be formed after the step of FIG. 3A.
  • FIG. 4 is a diagram showing in detail another embodiment of the groove 14b formed in the p-cladding layer 14. As shown in FIG. FIG. 3 shows the force when the groove 14b is formed only in the p-cladding layer 14. FIG. 4 shows the groove shape when the uneven portion is formed deeper than the p-cladding layer 14. FIG.
  • the groove portion 14b is formed in a sawtooth shape by performing etching until reaching the n clad layer 12 at an angle of 45 ° on the side wall. Alternatively, etching is performed until the GaO substrate 10 is reached.
  • a groove portion may be formed.
  • the groove 14b is preferably formed with a pitch P of 5D to 10D.
  • an insulating reflective layer can be provided on the side wall.
  • FIG. 5 shows the structure of a flip-type light emitting device according to the second embodiment of the present invention.
  • the light-emitting element 2 is formed on the GaO substrate 10 and the A1 formed on the lower surface of the GaO substrate 10.
  • Buffer layer 11 consisting of Ga N (where 0 ⁇ X ⁇ 1) force, n-Al Ga N (where 0 ⁇ z ⁇ 1) n-cladding layer 12 formed on the bottom surface of buffer layer 11, n-cladding layer Z 1— z on the underside of 12
  • the formed InGaN (where 0 ⁇ m ⁇ l) force is also formed on the lower surface of the active layer 13, and m 1— m
  • the reflective layer 15 formed on the lower surface of 14 and the p-electrode 16 formed on the lower surface of the reflective layer 15 are sequentially laminated.
  • the Ga O substrate 10 is a region where the buffer layers l1 to p electrode 16 are not stacked.
  • An n electrode 17 is formed on the substrate.
  • the p electrode 16 and the n electrode 17 are electrically connected to a lead frame (not shown) via a solder ball (not shown).
  • the other configuration is the same as that of the light emitting device according to the first embodiment of the present invention, and a description thereof will be omitted.
  • FIG. 6 is a diagram showing a two-dimensional simulation result of the current density distribution flowing through the active layer of the light emitting device.
  • the horizontal axis is the horizontal position of the light emitting element, and the origin 0 is at the left end of the length of one side of the element 340 ⁇ .
  • the vertical axis represents the current density flowing through the active layer of the light emitting element, normalized so that the respective current integral values are the same.
  • FIG. 6 includes (1) the light emitting element 1 according to the first embodiment, (2) the light emitting element 2 according to the second embodiment, and (3) the light emitting element 3 in FIG. 4) Current density distributions of the light emitting element 101 in FIG. 7B, (5) the light emitting element 102 in FIG. 7C, and (6) the light emitting element 103 in FIG. 7D are shown.
  • FIG. 7A is for comparison with the light-emitting element 2 according to the second embodiment.
  • FIG. 3 is a view showing a light emitting element 3 having a configuration in which an n electrode 17 is formed on a lad layer 12.
  • FIG. 7B is a diagram showing a light-emitting element 101 having a horizontal electrode structure using a sapphire substrate 110 that has also been used with conventional power.
  • FIG. 7C is a diagram showing a flip-type light emitting device 102 using a sapphire substrate 110 that has been conventionally used.
  • FIG. 7D is for comparison with the light-emitting element 1 according to the first embodiment, and the GaO substrate 10 and the buffer layer 11 of the light-emitting element 1 according to the first embodiment are lifted off. Removal
  • the Ga 2 O substrate 10 functions as a current diffusion layer.
  • the current density flowing through the active layer is low and uniform.
  • the active layer has only half the area of the element, so no current flows on the right side of 0.17 mm on the horizontal axis. For this reason, the current density flowing through the active layers of the respective elements 2, 3, 101, 102 is locally high.
  • the light emitting element 2 according to the second embodiment is a flip-flop using the same Ga 2 O substrate 10.
  • the current density is relaxed and the current distribution is varied.
  • FIG. 8 is a diagram showing a mounted configuration for making the light emitting element 1 according to the first embodiment emit light.
  • the LED main body 200 in a mounted state has a configuration in which the light emitting element 1 is electrically connected to the lead frame 211 formed on the printed circuit board 210 by the bonding wire 212 and fixed by the resin 213.
  • FIG. 9 shows an LED in which the light-emitting element 1 according to the first embodiment described above is mounted and a light-emitting element 102 having a conventional configuration using the sapphire substrate 110 of FIG. It is the figure which made the LED made into a state emit light, and compared.
  • FIG. 9A is a diagram showing the light output current dependency by comparing the light output when the current flowing through each element is increased.
  • the light output increases linearly regardless of the increase in current. This is because there is little or no current concentration.
  • the light emitting element 102 having the conventional configuration the light output does not increase linearly with the increase in current. This is because current concentration occurs in the active layer and the light emission efficiency decreases due to heat generation.
  • the light-emitting element 1 according to the first embodiment has a light output approximately twice that of the conventional light-emitting element 102 even at the same current flow rate. This is because the light emitted from the active layer 13 by the reflective layer 15 from the concavo-convex portion of the light emitting device 1 according to the first embodiment is Ga.
  • Etching the p layer in an LED using a conventional sapphire substrate is also effective in increasing the light extraction efficiency.
  • FIG. 9B is a diagram showing the dependence of the light output current density on the light output current density by comparing the current density with the light output.
  • the light-emitting element 1 according to the first embodiment a large light output is obtained without increasing the current density. This is because the increase in current density is small in the configuration of the light emitting element 1 according to the first embodiment as shown in FIG.
  • the light emitting element 102 having the conventional configuration for example, 350 A / cm 2 is required to obtain a light output of 20 mW, which is accompanied by a large increase in current density. This is because the current density increases in the active layer and the light emission efficiency decreases due to heat generation.
  • the light emitted from the active layer 13 by the reflective layer 15 varies in various directions toward the Ga 2 O substrate 10 due to the device configuration shown in FIG. In the direction
  • Reflected light suppresses total reflection at the GaO substrate interface and improves light extraction efficiency.
  • the electrode configuration shown in FIG. 2 suppresses an increase in current density in the active layer, and a uniform current density can be obtained. As a result, excessive heat generation in the active layer is suppressed, and a decrease in luminous efficiency can be suppressed.
  • FIG. 10 is a plan view of the n-electrode 17 when the light-emitting element is formed in a rectangle with a side of 3.4 mm, as viewed from above in FIG.
  • the configuration is the same as that of the light-emitting element 1 according to the first embodiment, and only the size is different. Therefore, the description of the configuration is omitted.
  • the light-emitting element 1 according to the first embodiment is a force that does not include the uneven portion 14a of the p-cladding layer 14 and the reflective layer 15.
  • the light emitting device according to the fourth embodiment has a rectangular shape with a side L2 of 3.4 mm and a GaO substrate 10.
  • the thickness W2 of 2 3 is preferably lmm or more.
  • the thickness ratio of the substrate 10 is preferably 0.3 or more.
  • an outer n-electrode 170a having a width W2 of 10 m and an inner n-electrode 170b having a pad shape having a diameter D5 of 90 m are formed on the upper surface.
  • the n-electrode 170 is composed of the force between the outer n-electrode 170a and the inner n-electrode 170b, and the GaO substrate 10 side force is also loaded with Ti and A1.
  • the n-electrode 170a is formed in an open loop shape by connecting two annular outer n-electrodes 170a surrounding the inner rim Jn electrode 170b with a connecting portion 170c.
  • the intervals D6 to D8 are each 0.545 mm.
  • FIG. 11 shows the thickness of the Ga 2 O substrate 10 by causing the light emitting device according to the fourth embodiment to emit light.
  • All sizes of the GaO substrate 10 are 3.4 mm, and the thicknesses are 100 mm, 400 ⁇ m, 1000 ⁇ m.
  • the relationship between the lateral position of the light emitting element and the current density was plotted for each of the three types m.
  • the current density on the vertical axis is normalized with the current density at the center being 1.
  • the substrate is compared with the current density at the center of the substrate.
  • the current density at the edge can be suppressed by a drop of about 30%.
  • Ga O substrate 1 In contrast, Ga O substrate 1
  • the thickness force is 0 m and 400 m, the current density at the substrate edge is greatly reduced.
  • the transmittance of incident light of a 1000 ⁇ m-thick Ga 2 O substrate for a wavelength of 380 nm is about 7 Since it is 4%, it is possible to extract light sufficiently even at this thickness. Since the transmittance of a GaN substrate that is also transparent and conductive is about 10%, the light extraction efficiency is poor, and using a GaO substrate increases the substrate thickness. Can also take out enough light
  • the light emitting device according to the fifth embodiment is the same as the light emitting device according to the first embodiment and the fourth embodiment, except that the substrate surface on the active layer 13 side of the Ga 2 O substrate 10 is dry-etched.
  • the concavo-convex portion may have a sawtooth shape or a lens shape in addition to the concave and convex shape.
  • Other configurations are the same as those in the first embodiment and the fourth embodiment, and thus description thereof is omitted.
  • FIG. 12 shows the case (1) when a concavo-convex part is formed on the substrate surface on the active layer 13 side of the Ga 2 O substrate 10.
  • FIG. 6 is a diagram showing the dependence of the optical output current on the case (2) without forming! /.
  • the light emitting device includes the active layer 13 of the Ga 2 O substrate 10.
  • the power S can be obtained with 1.25 times the light output with the same amount of current.
  • the GaO substrate is formed by the concavo-convex portions of the GaO substrate 10.
  • FIG. 13 is a diagram illustrating a mounting state in the case of a large-area light-emitting element such as the light-emitting element according to the fourth embodiment.
  • FIG. 13A is an upper plan view showing an n-electrode arrangement.
  • FIG. 13B is a diagram showing a mounted state of the light emitting element in the case of having the n electrode arrangement of FIG. 13A.
  • the n electrode 17 is formed on the surface of the GaO substrate 10 and formed on the printed circuit board 310.
  • the lead frame 311 is electrically connected via a bonding wire 312.
  • FIG. 13C is a diagram showing a mounted state of the light emitting element in the case of having the n electrode arrangement of FIG. 13A.
  • the n-electrode 17 is formed in the area where the Ga 2 O substrate 10 is dug, and the printed circuit board 310
  • the lead frame 311 formed above is electrically connected via a bonding wire 312. As a result, the light extraction effect can be obtained without increasing the resistance even when the substrate is thickened. It is. Moreover, cleavage can be suppressed.
  • FIG. 13D is a diagram showing a mounted state of the light-emitting element when the n-electrode arrangement in FIG. 13A does not have the central n-electrode but has the n-electrodes 17 only at the four corners.
  • n electrode 17 is Ga O
  • the lead frame 311 and the metal wiring arm 313 are electrically connected by a conductive paste 314 and mechanically coupled. It is also possible to connect by means other than the conductive paste 314, for example, by using a paste or the like.
  • the sixth embodiment even when the area of the light emitting element is increased, a highly reliable implementation is possible.
  • the metal wiring arm 313 is more rigid than the bonding wire, so that particularly reliable mounting is possible even when the light-emitting element has a large area.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

L'invention concerne un dispositif électroluminescent dans lequel la lumière située dans la zone visible à ultraviolet peut être prélevée du côté substrat à l'aide d'un substrat Ga2O3 et l'efficacité de découplage côté substrat est excellente. Ce dispositif électroluminescent permet de supprimer une augmentation de densité de courant. L'invention concerne spécifiquement un dispositif électroluminescent caractérisé en ce qu'il comprend un substrat Ga2O3 ainsi qu'une couche épitaxiale formée sur le substrat Ga2O3 et présentant des parties renfoncées et en saillie. Les parties renfoncées et en saillie réfléchissent la lumière émise par la couche active dans diverses directions vers le substrat Ga2O3, supprimant ainsi une réflexion totale par l'interface du substrat Ga2O3 et améliorant l'efficacité de découplage.
PCT/JP2007/068150 2006-10-06 2007-09-19 Dispositif électroluminescent WO2008044440A1 (fr)

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JP2006275535A JP2008098249A (ja) 2006-10-06 2006-10-06 発光素子

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JP5211996B2 (ja) 2008-09-30 2013-06-12 豊田合成株式会社 発光装置
JP5849215B2 (ja) * 2010-06-21 2016-01-27 パナソニックＩｐマネジメント株式会社 紫外半導体発光素子
JP5512046B2 (ja) * 2011-08-09 2014-06-04 パナソニック株式会社 窒化物半導体層成長用構造、積層構造、窒化物系半導体素子および光源ならびにこれらの製造方法
JP5398937B1 (ja) * 2012-02-23 2014-01-29 パナソニック株式会社 窒化物半導体発光チップ、窒化物半導体発光装置及び窒化物半導体チップの製造方法
KR102075147B1 (ko) 2013-06-05 2020-02-10 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
JP2016195171A (ja) * 2015-03-31 2016-11-17 ウシオ電機株式会社 半導体発光素子及びその製造方法

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