WO2008018463A1 - Defect inspecting method and defect inspecting apparatus - Google Patents
Defect inspecting method and defect inspecting apparatus Download PDFInfo
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- WO2008018463A1 WO2008018463A1 PCT/JP2007/065451 JP2007065451W WO2008018463A1 WO 2008018463 A1 WO2008018463 A1 WO 2008018463A1 JP 2007065451 W JP2007065451 W JP 2007065451W WO 2008018463 A1 WO2008018463 A1 WO 2008018463A1
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- inspection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/646—Specific applications or type of materials flaws, defects
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
- G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a defect inspection method and apparatus, and more particularly, to a defect inspection method and apparatus using optical inspection and electron beam inspection.
- Patent Document 1 Japanese Patent Laid-Open No. 2005-61837
- Patent Document 1 Japanese Patent Laid-Open No. 2005-618373 proposes a method in which an optical inspection and an inspection using an electron beam are combined.
- this method merely performs optical inspection on all patterns formed on the substrate to detect defects and reconfirms the defects by a method using an electron beam. Therefore, the defect detection efficiency is inferior, and if the inspection takes a long time and takes a long time, the problem will be solved.
- a general object of the present invention is to provide a novel and useful defect detection method and apparatus that solves the above problems.
- a more specific object of the present invention is to provide a defect inspection method and a defect inspection apparatus for detecting a defect of a pattern shape formed on a substrate with good efficiency. Means for solving the problem
- a defect inspection method for inspecting a defect having a shape formed on a substrate, the plurality of divided regions on the substrate.
- a primary inspection is sequentially performed by an optical method, and a first step of selecting the region to perform a secondary inspection from the plurality of regions is selected in the first step.
- a defect inspection method characterized by comprising a second step of detecting a defect by performing a secondary inspection using an electron beam for the selected region.
- the region is preferably a region corresponding to one die when forming a semiconductor chip on a substrate.
- one region may be a region corresponding to one semiconductor chip when the semiconductor chip is formed on the substrate.
- the predetermined pattern is preferably a test pattern formed in each of a plurality of regions.
- the predetermined pattern may be a memory cell formed in each of a plurality of regions.
- the predetermined pattern is analyzed by irradiating the predetermined pattern with light and analyzing the spectrum of the reflected light of the light according to the predetermined pattern. Even so! /
- a defect inspection apparatus for inspecting a defect having a shape formed on a substrate, wherein the predetermined inspection is performed on each of a plurality of divided regions on the substrate.
- An optical inspection apparatus that sequentially performs a primary inspection on a pattern by an optical method and selects the area to be subjected to a secondary inspection from the plurality of areas, and an area selected by the optical inspection apparatus.
- a defect inspection apparatus comprising an electron beam inspection apparatus that performs a secondary inspection using an electron beam and detects a defect.
- the optical inspection apparatus irradiates a predetermined pattern with a light beam, and analyzes the spectrum of the reflected light of the light beam according to the predetermined pattern, thereby determining the predetermined pattern. It is preferable to conduct an analysis.
- FIG. 1 is a flowchart showing a defect inspection method according to an embodiment of the present invention.
- FIG. 2 is a diagram showing a plurality of divided areas on a substrate.
- FIG. 3 is an enlarged view (part 1) of the region shown in FIG.
- FIG. 4 is an enlarged view (part 2) of the region shown in FIG.
- FIG. 5 is a schematic view showing a defect inspection apparatus according to an embodiment of the present invention.
- FIG. 6 is a diagram showing an outline of an optical inspection method.
- FIG. 7 is a diagram showing an outline of an electron beam inspection method.
- Electron emitter 203 focusing lens
- FIG. 1 is a flowchart showing an outline of a defect inspection method according to an embodiment of the present invention.
- the defect inspection method shown in FIG. 1 is a method for detecting defects in the shape (for example, pattern wiring, holes, etc.) formed on the substrate.
- an optical primary inspection is performed in step S1.
- a secondary inspection using an electron beam is performed in accordance with the result of the optical inspection in step S1.
- an area on the substrate with a high probability that a defect is formed is detected by optical inspection, and an area to be subjected to the secondary inspection with an electron beam that enables detection of minute defects. Select promptly.
- defects are generated by sequentially inspecting a plurality of regions formed so as to divide the substrate by a predetermined optical pattern formed in each region. Select the area immediately! /
- the primary inspection described above in principle, it differs from a method of inspecting all patterns (shapes) formed on a substrate (for example, the method described in JP-A-2005-61837).
- a predetermined pattern formed in the area is sequentially inspected to determine whether or not there is a high possibility that a defect is formed in the area.
- an area where defects are likely to be formed is selected, and the selected area is subjected to secondary inspection using an electron beam that can detect minute defects.
- a predetermined light beam for example, laser light
- a spectrum of reflected light by the predetermined pattern of the light beam is measured. It is preferable to use a method of analyzing the shape of a predetermined pattern by analyzing. An example of this analysis method will be described later.
- the pattern recognition method based on the analysis of the reflected light is more efficient in the primary inspection than the pattern recognition method using an optical microscope (for example, the method described in JP-A-2005-61837). It has an advantage.
- a predetermined pattern is irradiated with light rays in a spot manner rather than scanning to detect defects such as pattern recognition with an optical microscope or the like.
- the reflected light is analyzed to detect a defect. For this reason, the efficiency of the primary inspection is good in the method based on the spectrum analysis of reflected light.
- such light irradiation analysis of reflected light
- the plurality of regions obtained by dividing the substrate may be determined as follows, for example.
- a substrate is divided into a plurality of regions arranged in a matrix called a die.
- a die one unit for exposure by an exposure device is called a die.
- One die is sometimes called one shot.
- the plurality of divided regions used in the primary inspection are regions corresponding to the above-described die. In this way, defect inspection can be performed efficiently by making one region correspond to one die.
- FIG. 2 is a schematic diagram showing an example in which the substrate W is divided into a plurality of regions (for example, dies) A1.
- the region A1 is arranged on the substrate W in a matrix.
- the primary inspection is performed spotwise with respect to a predetermined pattern in the area A1.
- FIG. 3 is an enlarged view schematically showing the region A1.
- Fig. 3 shows the case where one semiconductor chip C1 is formed on one die (area A1). It is a semiconductor chip.
- the semiconductor chip C1 includes a region al in which a logic circuit is formed, a region a2 in which a peripheral circuit is formed, a region a3 in which a memory circuit is formed, and the like.
- a region T in which a test pattern is formed is formed at the periphery of the semiconductor chip C1.
- the test pattern corresponds to a predetermined pattern in the primary inspection described above. For example, by performing an optical inspection on the test pattern, it is determined whether or not a secondary inspection using an electron beam is performed on the area A1.
- a pattern to be subjected to the primary inspection (primary inspection area where the primary inspection is performed) and a pattern where the secondary inspection is performed with an electron beam (secondary inspection area where the secondary inspection is performed) ) May be set differently.
- an optical inspection test pattern suitable for optical inspection is used
- an electron beam inspection test pattern suitable for electron beam inspection is used.
- a test pattern is separately formed on the substrate in advance!
- the inspection may be performed using a pattern related to the device of the semiconductor chip formed in any one of the region al to the region a3 other than the test pattern, for example.
- the efficiency is given the highest priority, and the test pattern is used for quick inspection.
- the characteristics of the product are evaluated.
- fi detection may be performed with priority given to inspection accuracy.
- the difference between the designed line width and the line width calculated in the primary inspection in a certain region is a predetermined value. If this happens, a secondary inspection should be performed in that area.
- the pattern is a hole (hole)
- the difference between the designed hole diameter and the hole diameter calculated in the primary inspection is a predetermined value or more, A secondary inspection may be performed in this area.
- a region to be subjected to the secondary inspection may be selected according to variations in the shape of each predetermined pattern in a plurality of regions.
- FIG. 4 is a diagram showing another configuration example of the area A1.
- a plurality of memory semiconductor chips C2 are formed in the region A1.
- a memory cell bl and a peripheral circuit b2 are formed on the semiconductor chip C2.
- a plurality of semiconductor chips may be formed for one die (one region).
- the memory cell bl described above may be used as the predetermined pattern used for the primary inspection.
- the primary inspection in the example shown in FIG. 4 may be performed, for example, at one location per die and for any one memory cell bl of the plurality of semiconductor chips C2. .
- a primary inspection may be performed on each semiconductor chip C2 in one die. In this case, the primary inspection may be performed on the memory cell M of each semiconductor chip C2.
- FIG. 5 shows an example of the configuration of a defect inspection apparatus that performs the above-described defect inspection method.
- FIG. 5 is a diagram schematically showing a configuration of a defect inspection apparatus that performs the defect inspection method described in FIG.
- the defect inspection apparatus 300 shown in FIG. 5 includes an optical inspection apparatus 100 and an electron beam. Type inspection device 200.
- the optical inspection apparatus 100 includes an optical inspection unit 100A, a control unit 100B, and a computer 100C.
- the optical inspection unit 10 OA irradiates a predetermined pattern on the substrate with a light beam such as a laser and analyzes the reflected light of the predetermined pattern to recognize the shape of the predetermined pattern.
- the optical inspection unit 100A is operated by the computer 100C via the control unit 100B.
- the computer 100C is shared with an electron beam inspection apparatus 200 described later.
- the above-described optical inspection apparatus 100 performs the primary inspection as described above with reference to FIG. 1, and selects the region on the substrate for the secondary inspection.
- the electron beam inspection apparatus 200 includes an electron beam inspection unit 200A that irradiates a substrate (pattern) with an electron beam, a control unit 200B, a signal processing unit 200C, a display unit 200D, an imager unit 200E, A pattern matching unit 200F, a storage unit 200G, and a computer 100C shared with the optical inspection apparatus 100 are included.
- the substrate is irradiated with an electron beam (primary electron) in a reduced pressure space, and secondary electrons generated by the irradiation of the primary electrons are detected.
- the detected secondary electron data is processed by the signal processing unit 200C to become image data.
- the image data is displayed on the display unit 200D. Further, the image data is sequentially stored in the image storage unit 200E. Pattern matching force between image data and pattern for comparison. Pattern unit 200F is used to detect defects. Further, the defect detection data is stored in the storage unit 200G as necessary.
- the electron beam inspection apparatus 200 it is possible to detect a fine pattern defect that is difficult to detect by an optical inspection by using an electron beam.
- the optical inspection unit 100A irradiates a light beam 103 such as a laser beam to the primary inspection area A2 of a predetermined pattern (for example, a test pattern) on the substrate W.
- a predetermined pattern for example, a test pattern
- the light beam 103 is reflected by a predetermined pattern.
- the reflected light 104 is detected by the detector 102, and is subjected to spectroscopy by a spectroscopic unit (not shown) such as a spectroscopic ellipsometer or a spectroreflectometer, for example, and spectrum analysis is performed.
- the most approximate spectrum is selected.
- the force S is calculated to calculate the profile (line width, hole diameter, height, etc.) of the predetermined pattern described above.
- Such an optical pattern recognition method is described in, for example, JP-A-2005-61837, JP-A-2002-243925, JP-A-2005-517903, and the like. .
- primary inspection can be performed more efficiently than in the case of using pattern recognition using an optical microscope.
- the general tendency of the pattern shape in the primary inspection area A2 irradiated with the light beam 103 can be quickly grasped. It becomes possible to quickly select whether or not to perform the inspection.
- FIG. 7 is a diagram schematically showing an outline of the electron beam inspection unit 200A.
- the electron beam inspection unit 200 A has a vacuum container 201 whose inside is evacuated by an evacuation unit 220 to become a decompressed space. Inside the vacuum vessel 201, a substrate holder 205 for holding a substrate W to be inspected is installed. In addition, an electron emission unit 202 for irradiating the substrate W with primary electrons is provided so as to face the substrate holding table 205.
- a predetermined voltage is applied from power supply 207 to electron emission unit 202, so that primary electrons are irradiated onto substrate W. Secondary electrons generated by the primary electrons irradiated on the pattern on the substrate W are detected by the electron detection unit 206 and processed by the signal processing unit 200C shown in FIG. 5 to become image data.
- the electron beam inspection unit 200A is sometimes referred to as an SEM (scanning electron microscope) inspection apparatus.
- the primary inspection is performed by the optical inspection apparatus 100, and the region on the substrate where the secondary inspection using the electron beam is performed is quickly selected. For this reason
- the defect inspection apparatus 300 sequentially inspects a predetermined pattern in a part of the divided area of the substrate in a spot shape, a defect that requires secondary inspection occurs. It is possible to select a region quickly!
- defect inspection method and the defect inspection measures described above are not limited to the manufacture of semiconductor chips (semiconductor devices), but also include display devices such as liquid crystal display devices and plasma displays.
- the present invention can be applied to a defect inspection method and apparatus using optical inspection and electron beam inspection.
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- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
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Description
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Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN2007800008533A CN101341589B (zh) | 2006-08-11 | 2007-08-07 | 缺陷检查方法和缺陷检查装置 |
US12/376,407 US8040504B2 (en) | 2006-08-11 | 2007-08-07 | Defect inspecting method and defect inspecting apparatus |
KR1020097002675A KR101046799B1 (ko) | 2006-08-11 | 2007-08-07 | 결함 검사방법 및 결함 검사장치 |
Applications Claiming Priority (2)
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JP2006-220162 | 2006-08-11 | ||
JP2006220162A JP5022648B2 (ja) | 2006-08-11 | 2006-08-11 | 欠陥検査方法および欠陥検査装置 |
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WO2008018463A1 true WO2008018463A1 (en) | 2008-02-14 |
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PCT/JP2007/065451 WO2008018463A1 (en) | 2006-08-11 | 2007-08-07 | Defect inspecting method and defect inspecting apparatus |
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US (1) | US8040504B2 (ja) |
JP (1) | JP5022648B2 (ja) |
KR (1) | KR101046799B1 (ja) |
CN (1) | CN101341589B (ja) |
TW (1) | TWI404155B (ja) |
WO (1) | WO2008018463A1 (ja) |
Families Citing this family (9)
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JP5086970B2 (ja) * | 2008-11-05 | 2012-11-28 | パナソニック株式会社 | 木材の外観検査装置、木材の外観検査方法 |
JP2010112833A (ja) * | 2008-11-06 | 2010-05-20 | Hitachi High-Technologies Corp | 電子線式基板検査装置 |
KR101955466B1 (ko) * | 2010-10-26 | 2019-03-12 | 삼성디스플레이 주식회사 | 실링 검사 장치 및 이를 이용한 평판 표시 장치의 실링 검사 방법 |
US10151986B2 (en) | 2014-07-07 | 2018-12-11 | Kla-Tencor Corporation | Signal response metrology based on measurements of proxy structures |
JP6685301B2 (ja) * | 2014-11-19 | 2020-04-22 | デカ テクノロジーズ インコーポレイテッド | ユニット固有パターニングの自動光学検査 |
JP6521735B2 (ja) * | 2015-05-20 | 2019-05-29 | Juki株式会社 | 検査装置、検査方法及び検査装置で用いられるプログラム |
US10042974B2 (en) * | 2016-05-30 | 2018-08-07 | Camtek Ltd. | Inspecting a wafer using image and design information |
KR20180079157A (ko) * | 2016-12-29 | 2018-07-10 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
KR102409943B1 (ko) * | 2017-11-29 | 2022-06-16 | 삼성전자주식회사 | 결함 검출 방법 및 이를 수행하기 위한 장치 |
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JP2005017145A (ja) * | 2003-06-27 | 2005-01-20 | Hitachi High-Technologies Corp | 試料寸法測定方法及び荷電粒子線装置 |
JP2005061837A (ja) * | 2003-08-11 | 2005-03-10 | Jeol Ltd | 走査型荷電粒子ビーム装置を用いた欠陥検査方法 |
JP2007235023A (ja) * | 2006-03-03 | 2007-09-13 | Hitachi High-Technologies Corp | 欠陥観察方法および装置 |
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JP4206192B2 (ja) * | 2000-11-09 | 2009-01-07 | 株式会社日立製作所 | パターン検査方法及び装置 |
US6252412B1 (en) * | 1999-01-08 | 2001-06-26 | Schlumberger Technologies, Inc. | Method of detecting defects in patterned substrates |
JP4677701B2 (ja) * | 2001-09-28 | 2011-04-27 | 株式会社日立製作所 | パターン検査方法及び検査結果確認装置 |
WO2002037526A1 (fr) * | 2000-11-02 | 2002-05-10 | Ebara Corporation | Appareil a faisceau electronique et procede de fabrication d'un dispositif a semi-conducteur comprenant ledit appareil |
JP3817464B2 (ja) * | 2001-11-13 | 2006-09-06 | 株式会社日立ハイテクノロジーズ | 微細パターンの3次元形状測定システム、及び3次元形状測定方法 |
CN1518085B (zh) * | 2003-01-15 | 2010-05-12 | 内格夫技术有限公司 | 用于快速在线电光检测晶片缺陷的方法和系统 |
JP4564728B2 (ja) * | 2003-07-25 | 2010-10-20 | 株式会社日立ハイテクノロジーズ | 回路パターンの検査装置 |
KR101346492B1 (ko) * | 2003-10-27 | 2013-12-31 | 가부시키가이샤 니콘 | 패턴 검사장치 및 패턴 검사방법 |
JP4283201B2 (ja) * | 2004-10-14 | 2009-06-24 | 株式会社荏原製作所 | 情報記録媒体検査装置および方法 |
JP5283830B2 (ja) * | 2006-06-13 | 2013-09-04 | 富士通セミコンダクター株式会社 | 欠陥検査方法 |
-
2006
- 2006-08-11 JP JP2006220162A patent/JP5022648B2/ja not_active Expired - Fee Related
-
2007
- 2007-08-07 WO PCT/JP2007/065451 patent/WO2008018463A1/ja active Application Filing
- 2007-08-07 US US12/376,407 patent/US8040504B2/en not_active Expired - Fee Related
- 2007-08-07 CN CN2007800008533A patent/CN101341589B/zh not_active Expired - Fee Related
- 2007-08-07 KR KR1020097002675A patent/KR101046799B1/ko not_active IP Right Cessation
- 2007-08-10 TW TW096129711A patent/TWI404155B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005017145A (ja) * | 2003-06-27 | 2005-01-20 | Hitachi High-Technologies Corp | 試料寸法測定方法及び荷電粒子線装置 |
JP2005061837A (ja) * | 2003-08-11 | 2005-03-10 | Jeol Ltd | 走査型荷電粒子ビーム装置を用いた欠陥検査方法 |
JP2007235023A (ja) * | 2006-03-03 | 2007-09-13 | Hitachi High-Technologies Corp | 欠陥観察方法および装置 |
Also Published As
Publication number | Publication date |
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CN101341589A (zh) | 2009-01-07 |
TWI404155B (zh) | 2013-08-01 |
JP5022648B2 (ja) | 2012-09-12 |
JP2008047635A (ja) | 2008-02-28 |
CN101341589B (zh) | 2012-05-30 |
US20100245812A1 (en) | 2010-09-30 |
US8040504B2 (en) | 2011-10-18 |
TW200816343A (en) | 2008-04-01 |
KR101046799B1 (ko) | 2011-07-05 |
KR20090033892A (ko) | 2009-04-06 |
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