Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J63/00—Cathode-ray or electron-stream lamps
  • H01J63/06—Lamps with luminescent screen excited by the ray or stream
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B82—NANOTECHNOLOGY
  • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
  • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
• • G—PHYSICS
  • G02—OPTICS
  • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
  • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
  • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
  • G02B1/007—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of negative effective refractive index materials

Definitions

• Illumination device illumination method, photodetection device, and photodetection method
• the present invention relates to an optical image detection device such as a microscope, a camera, and an endoscope, an optical information writing / reading device such as an optical disc pick-up device, and an illumination device, an illumination method, and a lithographic device such as a stepper,
• the present invention relates to a light detection device and a light detection method.
• Non-Patent Document 3 even when the refractive index takes a negative value, if the real part of the permittivity or permeability is a negative value, the electromagnetic wave in a specific polarization state On the other hand, a negative refraction phenomenon is observed. Further, as disclosed in Non-Patent Document 5, a photonic band is folded in a reciprocal space in a periodic structure such as a photonic crystal, resulting in a refractive index, a dielectric constant and A negative refraction phenomenon is observed with respect to electromagnetic waves of a specific wavelength and a specific polarization state, even though the magnetic permeability is all positive.
• a material that exhibits a negative refraction response to a specific electromagnetic wave is referred to as a “material exhibiting negative refraction”. It goes without saying that “a material exhibiting negative refraction” t ⁇ ⁇ expression is a broader concept than a negative refraction material.
• materials exhibiting negative refraction include metal thin films, chiral materials, photonic crystals, metamaterials, left-handed materials, knock word wave materials, negative phase velocity media, and the like.
• materials exhibiting negative refraction include metal thin films, chiral materials, photonic crystals, metamaterials, left-handed materials, knock word wave materials, negative phase velocity media, and the like.
• Non-Patent Document 1 a material having both negative values of dielectric constant and magnetic permeability has a negative value of refractive index. Furthermore, it has been shown that such materials satisfy the so-called extended Snell's law!
• FIG. 17 shows how light is refracted in a normal optical material having a positive refractive index (hereinafter referred to as “normal optical material” where appropriate).
• normal optical material having a positive refractive index
• ⁇ is the incident angle
• ⁇ is the refraction angle
• ⁇ is the refractive index of medium 1
• ⁇ is the refractive index of medium 2.
• FIG. 18 shows how light is refracted when the refractive index n of the medium 2 takes a negative value.
• the incident light is refracted in the direction opposite to the refraction direction shown in FIG. 17 with respect to the normal of the boundary surface.
• the refraction angle ⁇ is a negative value, the above Snell's law is satisfied.
• FIG. 19 shows an imaging relationship by the convex lens 13 using a normal optical material.
• Light from the object point 11A on the object surface 11 is condensed by the convex lens 13 onto the image point 12A on the image surface 12.
• the refractive index of the lens is positive, it is necessary that the lens surface has a finite curvature in order to form an image (condensate).
• FIG. 20 shows an imaging relationship by the negative refraction lens 14.
• the light from the object point 11B on the object plane 11 is condensed by the negative refraction lens 14 onto the image point 12B on the image plane 12.
• Non-Patent Document 11 shows a method of realizing a non-magnification image by forming a curved lens with a material exhibiting negative refraction.
• a material having a predetermined refractive index gradient in addition to exhibiting negative refraction where conditions for complete imaging are very strict.
• all negative refractive lenses realized in the world have a spatially uniform refractive index, and the surface through which light (electromagnetic waves) passes is flat. Therefore, a spatially uniform flat plate made of a material exhibiting negative refraction is hereinafter referred to as a “negative refraction lens” as appropriate.
• spatial uniform means uniform on a scale larger than the wavelength of the electromagnetic wave. It is a taste. Therefore, when realizing negative refraction with artificial structural materials such as photonic crystals and metamaterials, the effective refractive index (or effective permittivity or effective permeability) due to the structure is spatially reduced. Means uniform.
• the theoretical upper limit of resolution is determined by the diffraction limit.
• the minimum distance between two resolvable points is about ⁇ .
• ⁇ is the wavelength used and ⁇ is the numerical aperture.
• structures smaller than the diffraction limit cannot be resolved by the optical system.
• the light emitted from the object point 11A on the object surface 11 is composed of two light waves: a radiated light that reaches far away and an evanescent wave that attenuates at a distance of about a wavelength from the object point 11A. .
• the emitted light corresponds to the low frequency component of the information on the object surface 11.
• One evanescent wave corresponds to the high frequency component of the information on the object surface 11.
• the boundary between the synchrotron radiation and the evanescent wave is a spatial frequency corresponding to 1Z ⁇ .
• evanescent waves have an in-plane frequency greater than ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ ⁇ . For this reason, the wavenumber component in the light wave propagation direction perpendicular to the evanescent wave is an imaginary number. For this reason, as the object surface 11 moves away, it decays rapidly.
• Non-patent document 3 disclosed in recent years discloses that the above-mentioned evanescent wave is amplified in a negative refraction material. Therefore, image formation by the negative refraction lens 14 shown in FIG. It is shown that on the image plane 12, the amplitude of the evanescent wave is recovered to a level equivalent to that on the object plane 11. That is, in the optical system shown in FIG. 20, both the emitted light and the evanescent wave propagate from the object plane 11 to the image plane 12. For this reason, the information of the object point 11B is completely reproduced at the imaging point 12B. This means that if an imaging optical system using the negative refraction lens 14 is used, complete imaging that is not restricted by the diffraction limit is possible.
• Non-Patent Document 4 a metamaterial in which metallic coils and rods smaller than the wavelength are periodically arranged is produced. It has been reported that such a metamaterial functions as a negative refraction lens in the microwave region.
• Non-Patent Document 5 discloses a method for producing a negative refraction material using a photonic crystal.
• a photonic crystal in which air rods are arranged in a hexagonal lattice in a dielectric, there is a photonic band in which the effective refractive index is isotropic and negative.
• the photonic crystal can be regarded as a two-dimensional uniform negative refraction material for electromagnetic waves in a frequency band suitable for the photonic band.
• Non-Patent Document 6 There is a theoretical objection to the complete image formation by the negative refraction lens as described in Non-Patent Document 6, for example. This caused controversy. However, in recent years, the theory of negative refractive lenses disclosed in Non-Patent Document 3 has been generally accepted.
• an aplanatic point that is, a point where the spherical aberration and the coma aberration become zero simultaneously.
• the image by this optical system is always a virtual image.
• an object plane can be arranged at an aplanatic point to form a real image (see, for example, Non-Patent Document 7). In this way, a unique optical design that has never existed before can be realized by using negatively bent materials.
• Non-Patent Document 9 silver exhibits a negative dielectric constant for light having a wavelength of 330 to 900 nm.
• a chiral material having a helical structure also has a photonic band exhibiting negative refraction.
• a metamaterial that also has a metal resonator array force is sometimes called a left-handed material or a left-handed metamaterial. These are also included in materials exhibiting negative refraction.
• Non-Patent Document 1 VG Veselago et al., Sov. Phys. Usp. 10, 509 (1968)
• Non-Patent Document 2 E. Hecht, "Optics", 4th ed. (Addison -Wesley, Reading, (MA, 2002)
• Non-Patent Document 3 B. Pendry, Phys. Rev. Lett. 85, 3966 (2000)
• Non-Patent Document 4 D. R. Smith et al., Phys. Rev. Lett. 84, 4184 (2000)
• Non-Patent Document 5 M. Notomi, Phys. Rev. B62, 10696 (2000)
• Non-Patent Document 6 P. M. Valanju et al., Phys. Rev. Lett. 88, 187401 (200
• Non-patent document 7 D. Schurig et al., Phys. Rev. E70, 065601 (2004)
• Non-patent document 8 DR Smith et al., Appl. Phys. Lett. 82, 1506 (2003)
• Non-patent document 9 “Latest Optical Technology Handbook” Junhei Tsujiuchi (Asakura Shoten)
• Non-Patent Document 10 B. Pendry, Science 306, 1353 (2004)
• Non-Patent Document 11 SA Ramakrishna et al., Phys. Rev. B69, 115115 (20 04)
• the negative refraction lens itself forms an image in which a high-frequency component is maintained by transmitting an evanescent wave.
• an illumination method in order to arbitrarily generate an optical image having a high frequency component using a negative refraction lens, or to detect an optical image force high frequency component generated from an object or the like by a negative refraction lens, an illumination method and There are the following problems related to the detection method.
• the detector in order to detect information on a desired high-frequency component, the detector is placed directly on the equal-magnification image plane of the negative refraction lens, and the detector has a frequency higher than the desired high-frequency component. It is necessary to have a detection band (spatial resolution)!
• the microscope force having a negative refractive lens as an objective lens In order to have a two-point resolution of 10 times that of the normal microscope described above, that is, 0.03 / zm, the detector or the light source is more than that. It is necessary to have a resolution of This means that when a two-dimensional image sensor such as a CCD or CMOS element is used as a detector, the pixel interval (pixel size) must be half of 0.03 / zm, that is, less than or equal to 0.015 m. To do.
• the size of the detectors or light sources is As in the case of the above image sensor, it must be less than 0.015 / zm.
• a SNOM (Scanning Near Field Optical Microscope) is a super-resolution optical microscope currently in practical use.
• the diameter of the opening at the tip of the probe used as a detector and light source in this SNOM is about 0.05 to 0.1 m ⁇ m. This is more than 3 times larger than the condition shown in the above example, ie, the detector and light source diameters of 0.015 m or less.
• the present invention has been made in view of the above-described problem, and is an illumination device, illumination method, photodetection device, and photodetection having high spatial resolution that is suitable for a high-frequency component due to an evanescent wave in a negative refraction lens. It aims to provide a method.
• a light emitter including a light emitting material that emits light when energy is applied, and energy is applied to the light emitter. It is possible to provide an illuminating device comprising: a probe for detecting an optical element, and an optical system including an optical element made of a material exhibiting negative refraction, and projecting light emitted from a light emitting body onto an object.
• the light emitter has a thin film shape.
• an electron beam as energy applied to the light emitter.
• an electrode made of a conductive material and having a protruding shape as a probe.
• an object light emitted from an object including a light source that illuminates an object, a light detector made of a photoconductive material, and an optical element made of a material exhibiting negative refraction. It is possible to provide a photodetection device comprising an optical system that projects onto a photodetection body and a probe for applying energy to a region that is smaller than the diffraction limit of object light with respect to the photodetection body.
• the photodetector has a thin film shape.
• an electron beam as energy applied to the photodetector.
• an electrode made of a conductive material and having a protruding shape as a probe.
• an optical step including an illumination step of illuminating an object, an object light emission step in which the object emits object light by illumination, and an optical element made of a material exhibiting negative refraction is provided. Projecting the object light onto a light detector made of a photoconductive material, a photoconductive step in which the light detector shows photoconductivity by projecting the object light, and the object light with respect to the light detector.
• an illuminating device an illuminating method, a photodetecting device, and a photodetecting method that have high spatial resolution and are adapted to high-frequency components due to evanescent waves in a negative refraction lens.
• FIG. 1 is a diagram showing a schematic configuration of an electron beam excitation light source according to Embodiment 1 of the present invention.
• FIG. 2 is a view showing a schematic configuration of a light emitting thin film with a conductive layer in Example 1.
• FIG. 3 is a view showing a schematic configuration of an optical image observation unit for an electron microscope in Example 1.
• FIG. 4 is a diagram showing a schematic configuration of an electron beam excitation light source in which a light emitter thin film in Example 1 is formed on a negative refraction lens also serving as an optical window.
• FIG. 5 is a diagram showing a schematic configuration of an electron beam excitation light source using a micro electron gun according to Embodiment 2 of the present invention.
• FIG. 6 is a perspective view of a micro electron gun in Example 2.
• FIG. 7 is a diagram showing a cross-sectional configuration of a micro electron gun in Example 2.
• FIG. 8 is a diagram showing a cross-sectional configuration of a micro electron gun with a deflector according to a second embodiment.
• FIG. 9 is a diagram showing a schematic configuration of a deflector in Embodiment 2.
• FIG. 10 is a diagram showing a schematic configuration of a light source using needle-shaped electrodes according to Example 3 of the present invention.
• FIG. 11 is a diagram showing a schematic configuration of a light emitter thin film in Example 3.
• FIG. 12 is a view showing a schematic configuration of a light source using needle electrodes with actuators in Example 3.
• FIG. 13 is a perspective view showing a schematic configuration of a needle electrode peripheral portion in Example 3.
• FIG. 14 is a diagram illustrating an equivalent circuit of an image pickup tube.
• FIG. 15 is a diagram showing a schematic configuration of an image pickup tube type detector according to Embodiment 4 of the present invention.
• FIG. 16 is a diagram showing a cross-sectional configuration of an optical window and a target in Example 4.
• FIG. 17 is a diagram showing light refraction in a normal optical material.
• FIG. 18 is a diagram showing how light is refracted in a material having a negative refractive index.
• FIG. 19 is a diagram showing an imaging relationship by a convex lens using a normal optical material.
• FIG. 20 is a diagram showing an imaging relationship with a negative refraction lens.
• FIG. 1 shows the 1 shows a schematic configuration of an electron beam excitation light source 100 according to a bright first embodiment.
• a cathode (force sword) 101 that emits electrons supplies an electron beam 102 that also has an emitted electron force.
• the anode (acceleration electrode) 103 applies an acceleration voltage to the emitted electrons.
• the electron lens 104 converges the electron beam.
• a cathode (force sword) 101, an anode (acceleration electrode) 103, and an electron lens 104 correspond to a probe, and an electron beam 102 corresponds to energy.
• the deflector 105 deflects the electron beam in a direction orthogonal to the central axis 119.
• the light emitter thin film 106 is made of a light emitting material.
• the optical window 107 is made of an optically transparent material.
• the vacuum chamber 108 is configured to keep the pressure of the electron beam path low.
• the vacuum chamber 108 houses a cathode (force sword) 101, an anode (acceleration electrode) 103, and a deflector 105.
• Light 109 emitted from the light emitter thin film 106 enters a negative refraction lens 110 made of a negative refraction material. Then, the light emitted from the negative refraction lens 110 irradiates the object 111.
• the electron beam 102 made of electrons emitted from the cathode 101 is accelerated by the electric field formed by the anode 103.
• the de Broglie wavelength (nm) of the electron beam accelerated by the voltage E (V) is obtained by the following equation (2).
• m is the mass of the electron (9. 107 X 10 _31 kg)
• e is the charge of the electron (1. 602 X 10 _19 C)
• the accelerated electron beam 102 is converged by the electron lens 104. Then, the light emitting thin film 106 is irradiated as a focused electron beam 102a.
• the diameter of the electron beam at this time can be easily reduced to about lnm by sufficiently increasing the acceleration voltage and adjusting the focus by the electron lens 104. Furthermore, as the electron lens 104, spherical aberration is By using a well-corrected lens, the electron beam diameter can be reduced to about 0. Inm.
• the region of the light emitter thin film 106 irradiated by the electron beam 102a is excited by the irradiated electrons.
• the spot light source region 106a is emitted and emits light 109a.
• the light 109a passes through the optical window 107 and enters the negative refraction lens 110.
• the spot light source region 106 a is projected onto the object 111 by the complete imaging action of the negative refraction lens 110.
• an image of the spot light source region 106a is formed on the object 111 as the spot illumination region 11 la.
• a spot light power object 111 having the same diameter as the convergent electron beam 102a is formed. Therefore, according to this embodiment, it is possible to illuminate the object 111 with spot light having a diameter equivalent to that performed by an electron beam, that is, a diameter of about Inm to about 0.1 Inm.
• the convergent electron beam 102 a can be deflected in a direction orthogonal to the central axis 119 by the deflector 105.
• the focused electron beam 102a is deflected to the left in the figure, it becomes a deflected focused electron beam 102b.
• the spot light source region 106a of the light emitter thin film 106 moves to the spot light source region 106b.
• the light 109a moves to the light 109b.
• the spot illumination area 1 11a on the object 111 moves to the spot illumination area 11 lb.
• the deflection direction and the deflection amount of the converging electron beam 102a by the deflector 105 can be arbitrarily controlled. Therefore, the spot illumination area 11 la on the object 111 can be arbitrarily moved and scanned by the above-described operation. At this time, it is desirable to reduce the moving step for scanning according to the spot diameter.
• an object that requires fine and high-resolution light irradiation if a heat-sensitive material or a light-sensitive material is applied, an exposure apparatus for lithography can be obtained that produces a fine structure such as a semiconductor or a micromachine. It can also be a writing device for optical information equipment such as an optical disk.
• the light beam 109 is emitted from the object 111 by using a photodetector (not shown).
• Reflected light 'transmitted light' Scattered light ⁇ It is configured to detect object light such as fluorescence, and if an optical information device medium such as an optical disk is applied as the object 111, it can be used as a reading device for optical information device. it can. Further, if an optical image observation target is applied as the object 111, a camera becomes an optical image observation device like a microscope.
• the conventional optical means can realize high spatial resolution of the electron beam level, which cannot be achieved by the diffraction limit of light.
• the present embodiment has many advantages over the method and configuration in which the electron beam is directly applied to the object 111, for example, an electron microscope or electron beam exposure apparatus.
• the irradiated particle (wave) is light, it has lower energy than the electron beam. Therefore, the object 111 is not damaged as in the case of being irradiated with an electron beam.
• the object 111 it is not necessary to place the object 111 in a vacuum, and it can be handled in any environment or medium as long as it is in a substance that allows light to pass, regardless of whether it is a gas, liquid, or solid. Therefore, there are very few restrictions on use. Furthermore, while the electron beam works only on the surface of the object 111, when the object 111 is transparent, the light 109 can reach the inside of the object.
• the cathode 101 electrons such as a thermal electron emission type that emits electrons by heating the electrode and a field emission type that emits electrons from the electrode by a high electric field are used. Any system and configuration can be used as long as they have a function of releasing.
• the electron lens may be an electromagnetic lens that focuses an electron beam using a magnetic field or an electrostatic lens that uses an electrostatic field.
• the deflector 105 may be an electromagnetic type or an electrostatic type.
• the material of the light emitter thin film 106 may be any material that emits light when irradiated with an electron beam.
• the material may be a substance that exhibits a force sword luminescence that emits light in the process of being excited to a high energy state and returning to a low energy state by irradiation of an electron beam, or the irradiated electron beam is decelerated in the material.
• the material itself may be a material that exhibits bremsstrahlung that directly emits light.
• Substances exhibiting force sword luminescence include fluorescent substances and phosphorescent substances, and both are applicable. More preferably, a fluorescent material is more suitable than a phosphorescent material because the afterglow time is shorter. The reason for this is that if the afterglow time is long, As the beam is deflected and scanned, the area of the spot light source region 106a is substantially increased, which is a force that causes a reduction in spatial resolution.
• the following can be suitably used as the fluorescent substance.
• the following can be preferably used.
• transition radiation OTRZ Optical Transition Radiation
• the substance that causes the transition radiation may be a metal or a dielectric.
• a metal for example, silver, aluminum, and stainless steel can be applied.
• An advantage of using transitional radiation as a light source is that the afterglow time is extremely short.
• a shorter afterglow time is desirable to suppress the decrease in spatial resolution associated with deflection scanning. Is as described above.
• the afterglow time in the transition radiation is ps, that is, 10_ about 12 seconds, can be much shorter.
• FIG. 2 shows a schematic configuration of the light emitter thin film 114 with a conductive layer, which is a preferred form in Example 1, particularly when a substance showing force sword luminescence is used as the light emitter thin film 106.
• the conductive layer 112 has a function of removing electrons charged in the light emitter thin film 106.
• the transparent conductive layer 113 removes electrons transmitted through the light emitter thin film 106 and transmits light 109 emitted from the light emitter thin film 106.
• the conductive layer 112 and the transparent conductive layer 113 are preferably kept at the same potential as the anode 103 and the vacuum chamber 108 in FIG.
• the potential in the vacuum chamber 108 can be made substantially constant. For this reason, the path of the electron beam 102 is disturbed by an unnecessary electric field, and the irradiation position can be reduced. Further, even if the surface of the light emitter thin film 106 is charged, the electrons are quickly removed through the conductive layer 112.
• the electrons are quickly removed through the transparent conductive layer 113. Therefore, the light emitter thin film 106 and the optical window 107 are not charged by the irradiation of the electron beam 102. As a result, there is an effect that the electric potential in the vacuum chamber 108, particularly in the vicinity of the light emitter thin film 106, is always kept constant.
• the conductive layer 112 needs to have a property of reaching the light emitter thin film 106 under the conductive layer 112 without blocking the electron beam irradiated with the upper force in the drawing.
• the transparent conductive layer 113 needs to reach the optical window 107 therebelow, which has conductivity and does not block the light emitted from the light emitter thin film 106.
• a zinc oxide-based material, an indium oxide-based material, or a tin oxide-based material is suitable.
• nc Oxide is preferred.
• SnO sulfur dioxide
• ITO Indium Tin Oxide
• FTO Fluorine doped Tin Oxide in which fluorine is added to tin oxide is desirable.
• FIG. 3 shows a schematic configuration of an optical image observation unit 118 for a scanning electron microscope (SEM).
• SEM scanning electron microscope
• a microscope specimen 116 is placed in the specimen chamber 115 in the vacuum chamber of the SEM.
• the photodetector 117 detects the object light 120 emitted from the microscope specimen 116 when irradiated with light.
• the SEM optical image observation unit 118 is configured to be detachable from the specimen chamber 115 of the SEM.
• the SEM optical image observation unit 118 When the SEM optical image observation unit 118 is installed, as shown in the explanation of FIG. 1, it is possible to observe an optical image with a high spatial resolution of the electron beam level. In other words, a single SEM has the advantage that high-resolution optical image observation is possible, as well as SEM image observation.
• the object light 120 in FIG. 3 is drawn as transmitted light from the microscope specimen 116.
• the present invention is not limited to this, and by appropriately selecting the type and arrangement of the light detector 117, any microscope sample 116 that emits fluorescence, reflected light, forward scattered light, back scattered light, Raman scattered light, etc. It is possible to detect different types of object light 120.
• FIG. 4 shows a schematic configuration of an electron beam excitation type light source 121 in which a light emitter thin film is formed on a negative refraction lens also serving as an optical window, which is a preferred form of the optical window and the negative refraction lens in Example 1.
• the light emitter thin film 106 is formed on the upper surface side of the negative refracting lens 122 that also serves as an optical window, and at the same time, it is attached to the vacuum chamber 108.
• the light in Figure 1 It can also function as the academic window 107 and the negative refraction lens 110.
• the optical window 107 made of a normal optical material such as glass is not used, it is possible to avoid adverse effects due to absorption, scattering, and reflection that may occur in the optical window portion. Moreover, the influence of the disturbance of the optical path due to the nonuniformity of the material constituting the optical window can be avoided.
• FIG. 5 shows a schematic configuration of an electron beam excitation type light source 200 using a micro electron gun.
• FIG. 6 shows a perspective configuration of the optical window and the micro electron gun.
• Figure 7 shows the cross-sectional configuration of the micro electron gun of the electron beam excitation light source 200!
• the metal case 201 is hermetically sealed with a sealing material 202.
• the optical window 203 is made of a transparent material, and is a substrate for transmitting light and mounting an electron gun in the center.
• the micro electron gun 204 includes an emitter substrate layer 205, a gate electrode layer 206, and an electron lens electrode layer 207.
• the emitter external wiring 211 connects the emitter substrate layer 205 to an external circuit (not shown).
• the gate external wiring 212 connects the gate electrode layer 206 to an external circuit (not shown).
• the electronic lens external wiring 213 connects the electronic lens electrode layer 207 to an external circuit (not shown).
• the emitter bonding wire 208 connects the emitter substrate layer 205 and the emitter external wiring 211.
• the gate bonding wire 209 connects the gate electrode layer 206 and the gate external wiring 212.
• the electron lens bonding wire 210 connects the electron lens electrode layer 207 and the electron lens external wiring 213.
• the cathode (emitter) 214 has a conical shape or a pyramid shape, and emits electrons from the tip.
• the gate 215 generates a high electric field at the tip of the emitter 214 to emit the electron at the tip of the emitter, and causes this to function as a field emission cathode.
• the electron lens 216 is an electrostatic lens that squeezes the electron beam from which the emitter tip force is also emitted.
• the insulating layer 217 includes an emitter substrate layer 205, a gate electrode layer 206, an electron lens electrode layer 207, Is electrically insulated.
• the airtight space 201a inside the metal case 201 is kept at a low atmospheric pressure so as not to obstruct the flow of the electron beam.
• the electrons in the emitter 214 are emitted from the tip of the emitter 214 by the high electric field created by the gate 215 and become the electron beam 102.
• the electron beam 102 is converged by the electron lens 216 to become a converged electron beam 102a.
• the focused electron beam 102 a is irradiated onto the light emitter thin film 106.
• the region of the light emitter thin film 106 irradiated by the electron beam 102a is excited by the irradiated electrons and becomes a spot light source region 106a to emit light 109a.
• the light 109 a passes through the optical window 203 and enters the negative refraction lens 110.
• the incident light is projected onto the object 111 by the complete imaging action of the negative refraction lens 110.
• an image of the spot light source area 106 a is formed on the object 111 as the spot illumination area 11 la.
• the electron beam excitation light source 200 shown in the second embodiment is different from the first embodiment in that it does not have a function of deflecting the electron beam 102a.
• Other configurations have the same features as the electron beam excitation light source 100 shown in the first embodiment.
• the electron beam excitation light source 200 has a feature that it can be extremely miniaturized.
• the micro electron gun 204 has a laminated structure as shown in FIGS. For this reason, techniques such as lithography, etching, vapor deposition, and sputtering, which are semiconductor and micromachine manufacturing techniques, can be applied during manufacturing. As a result, the electron beam excitation light source 200 can be very downsized.
• the inner diameter of the gate 215 and the electron lens 216 is about 500 nm to 2 ⁇ m, and the height of the emitter 214 is about 500 ⁇ to 2 / ⁇ ⁇ . Therefore, the micro electron gun 204 can be miniaturized to have a vertical lmm ⁇ horizontal lmm ⁇ thickness of about 0.5 mm.
• the appropriate distance between the emitter 214 and the light emitter thin film 106 in such an electron gun is 1 mn! ⁇ About 5mm.
• the outer diameter of the electron beam excitation light source 200 is 3mn! ⁇ 10mm, thickness 3mn! It can be downsized to about 8mm. Since this embodiment is small in size, it is particularly suitable for application to endoscopes, optical information equipment writing devices, and reading devices that require miniaturization.
• the shape of the emitter 214 is used to stabilize the electron beam 102a.
• the shape, process and material are important.
• the shape of the emitter 214 is preferably a cone or pyramid such as a cone or pyramid with a sharp tip, and the radius of curvature of the tip is preferably lOnm or less.
• niobium, molybdenum, and zirconium are preferable when the emitter 214 is manufactured by vapor deposition or sputtering. Silicon can also be used as a material. In this case, a reactive ion etching (Reactive Ion Etching ZRIE) or an anisotropic wet etching (Orientation Dependent Etching ZODE) is desirable.
• Reactive Ion Etching ZRIE reactive Ion Etching ZRIE
• anisotropic wet etching Orientation Dependent Etching ZODE
• Carbon nanotubes (Carbon NanotubeZCNT) and carbon nanohorns (Carbon Nanohorn) composed of carbon 6-membered and 5-membered rings can also be used as materials.
• the conductive layer is made conductive as a condition for transmitting the electron beam.
• the thickness of the layer should be less than 10 nm.
• the light emitter in FIG. 5 has been described as the light emitter thin film 106 made of a force-sword luminescent material, it is not limited thereto.
• the surface irradiated with the electron beam 102a and the surface from which the light 109a is emitted are the same surface, so that it can be used not only in a thin film shape but also in a bulk light emitter.
• there is an effect that even a cathodoluminescent material which is difficult to be thin-filmed can be used. More preferably, this Even in this case, it is desirable to form a conductive layer on the surface as in the case of the above embodiments.
• the emitter external wiring 211, the gate external wiring 212, and the electron lens external wiring 213 are all present on the optical window 203, and part of the light 109a is shielded. Therefore, it is desirable that the width of these wirings be narrow in order to reduce the light shielding ratio. It is more desirable to form the wiring with a transparent conductive material.
• FIG. 8 shows a schematic cross-sectional configuration of a micro electron gun with deflector 220 which is a preferred form of the micro electron gun in the second embodiment.
• Fig. 9 shows the electrode shape of the deflector.
• an electrostatic electron beam deflector 218 deflects the electron beam.
• a deflector electrode layer 219 is formed.
• a deflector 218 is added to the micro electron gun 204 in the second embodiment.
• the converged electron beam 102a can be deflected in an arbitrary direction perpendicular to the central axis 119 by applying voltages to the four deflectors 218a, 218b, 218c, and 218d arranged on the circumference.
• micro electron gun with deflector 220 is used as the electron beam excitation light source in FIG. 5 instead of the micro electron gun 204 described above.
• the illumination area can be scanned in the same manner as in the first embodiment while maintaining the above.
• FIG. 10 shows a schematic configuration of a light source 300 using needle-type electrodes of the present embodiment.
• FIG. 11 shows an optical window and a light emitter thin film in a light source 300 using needle electrodes.
• a cantilever 301 holds a needle-type electrode and positions the bracket with respect to the light emitter thin film 106.
• the needle electrode 302 is made of a conductor.
• the electrode 303 is for pairing with the needle electrode 302 to apply a voltage to the double-sided force of the light emitter thin film 106.
• the electrode 303 also has an external wiring function for connecting the electrode to an external circuit (not shown). Further, the electrode 303 is also a transparent conductive layer that transmits light 109 emitted from the light emitter thin film 106.
• the tip 302a of the needle-shaped electrode 302 is a cone, pyramid or needle with a sharp tip, and its curvature radius is preferably 10 nm or less.
• the tip 302a may be in contact with the light emitter thin film 106, or may be separated by a distance through which a tunnel current flows, that is, an interval of about 1 nm or less. More preferably, a drive element such as a bimorph type piezoelectric actuator is used as the cantilever 301, and the distance between the tip 302a and the light emitter thin film 106 can be arbitrarily controlled.
• a drive element such as a bimorph type piezoelectric actuator is used as the cantilever 301, and the distance between the tip 302a and the light emitter thin film 106 can be arbitrarily controlled.
• the size of the contact surface is several nm or less in diameter.
• a voltage is applied between the needle electrode 302 and the transparent conductive layer 303.
• the contact portion of the light emitter thin film 106 emits light, and this region becomes the spot light source region 106a.
• a tunnel voltage is applied between the needle electrode 302 and the transparent conductive layer 303.
• a tunnel current flows between one of the atoms or molecules forming the light emitter thin film 106 located closest to the tip 302 a and the needle electrode 302.
• the needle electrode 302 corresponds to a probe, and the tunnel current and tunnel voltage correspond to energy.
• one of the atoms or molecules exhibiting the tunnel emission becomes the spot light source region 106a.
• the image power of the light 109a emitted from the spot light source area 106a The action formed as the spot illumination area 11 la on the object 111 via the optical window 107 and the negative bending lens 110 is the same as in the first and second embodiments. is there.
• the light source 300 using the needle electrode shown in the present embodiment is different from the first embodiment in that it does not have a function of scanning the spot illumination area 11la.
• Other configurations have the same features as the electron beam excitation light source 100 shown in the first embodiment.
• the light source 300 using the needle-type electrode has a feature that it can be very miniaturized, like the electron beam excitation light source 200 using the micro electron gun shown in the second embodiment.
• the reason for downsizing is that the means for applying a voltage to the light emitter thin film 106 is the needle-shaped electrode 302 and the transparent conductive layer 303. Therefore, V and the deviation are forces that can be easily downsized.
• the tip 302a of the needle electrode has a light emitter thin film 106. It has the feature that stable light emission is possible when it is in contact with. In general, it is not easy to keep the surface state of a substance stable at the atomic level. For this reason, compared with the case where the voltage is applied by irradiating the surface of the illuminator with an electron beam, the action is more effective when applied through the needle-shaped electrode 302 in contact with the illuminator thin film 106. There are fewer instability factors in that they are not state dependent. As a result, stable light emission is possible.
• the light source 300 using the needle-shaped electrode forms a very small spot light source region 106a at the atomic or molecular level when the tip 302a is away from the light emitter thin film 106. Therefore, as the spot illumination area 11 la on the object 111, the atomic or molecular level ⁇ It has a feature that spatial resolution can be realized! The reason for the extremely high spatial resolution is that the tunnel emission generated by the tunnel current is also a force generated in one of the atoms or molecules forming the light emitter thin film 106.
• the shape, manufacturing method, and material of the needle-shaped electrode 302 are important in reducing the area of the spot light source region 106a and further stabilizing the light emitting action.
• the preferable conditions regarding the shape, manufacturing method, and material are the same as those of the emitter 214 shown in the second embodiment.
• Preferred conditions for the transparent conductive layer 303 are the same as those for the transparent conductive layer 113 shown in Example 1.
• the airtight space 201b inside the metal case 201 is kept at a low pressure or is filled with an inert gas in order to keep the contact state between the needle electrode 302 and the light emitter thin film 106 more stable. It is hoped that it will be heard.
• the material of the light emitter thin film 106 a substance that exhibits electoluminescence is suitable.
• the electroluminescent material either an electric field applied electroluminescent material or a current injection type electroluminescent material may be used.
• the following materials can be preferably used as the voltage application type electroluminescent material.
• FIG. 12 shows a schematic configuration of a light source 304 using a needle electrode with an actuator, which is a preferred embodiment of the light source using the needle electrode in the third embodiment.
• FIG. 13 shows the detailed shape of the peripheral part of the needle electrode of the light source 304.
• the three-axis piezoelectric actuator 305 drives the needle electrode 302 in three orthogonal directions.
• Piezoelectric actuator 305 consists of X-axis piezoelectric actuator 305x and Y-axis piezoelectric actuator 305x. It has a tutor 305y and a Z-axis piezoelectric actuator 305z!
• the light source 304 using the needle electrode with an actuator is configured by attaching a three-axis piezoelectric actuator 305 to the light source 300 using the needle electrode.
• the needle-type electrode 302 can be scanned with respect to the light emitter thin film 106 in the direction in the xy plane by the X-axis piezoelectric actuator 30x and the Y-axis piezoelectric actuator 305y.
• the distance between the tip 302a of the needle electrode and the light emitter thin film 106 can be arbitrarily controlled by the Z-axis piezoelectric actuator 305z.
• the illumination area can be scanned in the same manner as in the first embodiment while maintaining the advantages of the light source 300 using the needle electrode.
• FIG. 14 is an equivalent circuit for explaining the operation principle of a general imaging tube 400.
• the photoelectric conversion film (target) 401 is made of a photoconductive material.
• a surface 401EB of a photoelectric conversion film (hereinafter referred to as a “target” as appropriate) 401 is irradiated with an electron beam 102, and the surface 401EB
• the OI is irradiated with an optical image.
• the region 401PX regarded as one pixel in the target 401 corresponds to the cross-sectional area of the electron beam 102, and forms a cr time constant circuit between the electron beam irradiation surface 401EB and the optical image irradiation surface 401OI. is doing.
• the transparent conductive film 402 is formed in close contact with the optical image irradiation surface 401OI.
• a light beam 403 that forms an optical image is emitted from a lens 404 that forms the optical image.
• a DC power source 405 and a load resistor R 406 are connected, and an output signal terminal 407 is formed at the end.
• the resistance r of the pixel region 40 IPX varies depending on the intensity of the irradiated light beam 403.
• a target voltage V is applied to the transparent conductive film 402.
• the electron beam irradiation surface 401EB of the target 401 is irradiated with the electron beam 102, and the electron beam 102 is irradiated.
• the pixel region 401PX is sequentially turned on or off by scanning the child beam 102. Then, the signal of the pixel that is turned on is extracted from the output signal terminal 407 through the load resistor 406.
• the switch When the electron beam 102 is irradiated to one of the pixel regions 401PX, the switch is closed and the capacitor c is charged. For this reason, the potential of the electron beam irradiation surface 401EB is the same as that of the cathode 101 from which electrons are emitted, and is 0 V in this figure.
• the imaging tube 400 outputs the photoelectric conversion signal for each pixel region 401PX from the output signal terminal 407 in time series.
• FIG. 15 shows a schematic configuration of the imaging tube-type photodetector 408 according to the fourth embodiment.
• FIG. 16 shows an optical window and a target of the image pickup tube type photodetector 408.
• the light source 409 emits illumination light 410.
• the optical information detection target object 411 illuminated with the illumination light 410 emits object light 412.
• the configuration of the imaging tube type photodetector 408 is similar to the electron beam excitation type light source 100 shown in FIG. 1 of Example 1.
• the irradiation target of the electron beam 102 is not the light emitter thin film 106 but photoconductive.
• the difference is that it is a photoelectric conversion film (target) 401 made of a conductive material, that it always has a transparent electrode 402, and that it has a DC power source 405, a load resistor 406, and an output terminal 407.
• the image pickup tube type photodetector 408 has a photoelectric conversion of an optical image, like the general image pickup tube 400 described with reference to FIG.
• the object light 412 emitted from the optical information detection target object 411 passes through the negative refraction lens 110.
• the image is formed on the optical image irradiation surface 401OI side of the target 401.
• the formed optical image is photoelectrically converted by the target 401, and the signal is taken out from the output signal terminal 407.
• the focused electron beam 102a in the imaging tube type photodetector 408 is narrowed down to a diameter of about 1 nm to 0.1 nm, similar to the focused electron beam in the electron beam excitation light source 100 of the first embodiment.
• the focused electron beam 102a is irradiated onto the electron beam irradiation surface 401EB of the target, and the irradiated region becomes a pixel region 401PX.
• the pixel region 401PX is in a conjugate relationship with the pixel conjugate region 41la on the optical information detection target object 411 by the complete imaging action of the negative refraction lens 411.
• a photodetector having the same diameter as the convergent electron beam 102a detects light on the optical information detection target object 411.
• the focused electron beam 102a (energy) is applied to the region smaller than the diffraction limit of the object light from the cathode 101 corresponding to the probe to the target 401 which is a light detector.
• optical information detection can be performed with a photodetector having a diameter equivalent to that performed by an electron beam, that is, a diameter of about 1 nm to 0.1 nm.
• the intensity distribution of light on the target object 411 can be detected.
• the converged electron beam 102a can be deflected in a direction orthogonal to the central axis 119 by the deflector 105.
• the operation and effect are the same as those in the first embodiment.
• an optical information device medium such as an optical disk
• an optical image observation target is applied, it is used for a camera microscope.
• Such an optical image observation apparatus is obtained.
• the object light 412 in FIG. 15 is depicted as transmitted light from the optical information detection target object 411.
• the type and arrangement of the light source 409 fluorescence, reflected light, forward scattered light, and backward It is possible to detect all kinds of object light emitted from the optical information detection target object 411, such as scattered light and Raman scattered light.
• the cathode 101 has a potential of OV and the transparent electrode 402 has a positive potential (V). However, the cathode 101 may have a negative potential and the transparent electrode 402 may have 0V. The negative electrode may be negative and the transparent electrode positive.
• any photoconductive material may be used, and in particular, a target film used for an imaging tube is suitable.
• a target film used for an imaging tube is suitable.
• the following can be preferably used.
• Cadmium selenide film (CdSe)
• Amorphous silicon film (a- Si) is Amorphous silicon film (a- Si)
• the light-emitting thin film 106 in the lighting apparatus shown in the first embodiment is replaced with the target 401, and a photoelectric conversion signal detection circuit is further added, thereby showing the fourth embodiment.
• the photodetector 401 having high spatial resolution can be obtained by applying the target 401 and the photoelectric conversion signal detection circuit.
• both the spot illumination area 11 la in the illumination device and the pixel conjugate area 41 la in the light detection device have a small diameter of about lnm to 0.1 nm, both of them are used. It goes without saying that an extremely excellent confocal optical system can be constructed by applying the above to one object and matching the spot illumination region 11 la and the pixel conjugate region 41 la.
• the present invention is useful for an illumination device and a light detection device that have a negative refraction lens and have high spatial resolution.

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