WO2007057773A3 - Composes photoactifs - Google Patents

Composes photoactifs Download PDF

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Publication number
WO2007057773A3
WO2007057773A3 PCT/IB2006/003315 IB2006003315W WO2007057773A3 WO 2007057773 A3 WO2007057773 A3 WO 2007057773A3 IB 2006003315 W IB2006003315 W IB 2006003315W WO 2007057773 A3 WO2007057773 A3 WO 2007057773A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoactive compounds
photoactive
compounds
relates
present
Prior art date
Application number
PCT/IB2006/003315
Other languages
English (en)
Other versions
WO2007057773A2 (fr
Inventor
Dalil M Rahman
Munirathna Padmanaban
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Priority to JP2008540719A priority Critical patent/JP2009515944A/ja
Priority to EP06820954A priority patent/EP1963919A2/fr
Priority to KR1020087012503A priority patent/KR101421743B1/ko
Publication of WO2007057773A2 publication Critical patent/WO2007057773A2/fr
Publication of WO2007057773A3 publication Critical patent/WO2007057773A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/09—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton
    • C07C309/10—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing etherified hydroxy groups bound to the carbon skeleton with the oxygen atom of at least one of the etherified hydroxy groups further bound to an acyclic carbon atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C311/00—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups
    • C07C311/48—Amides of sulfonic acids, i.e. compounds having singly-bound oxygen atoms of sulfo groups replaced by nitrogen atoms, not being part of nitro or nitroso groups having nitrogen atoms of sulfonamide groups further bound to another hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00—Sulfones; Sulfoxides
    • C07C317/02—Sulfones; Sulfoxides having sulfone or sulfoxide groups bound to acyclic carbon atoms
    • C07C317/04—Sulfones; Sulfoxides having sulfone or sulfoxide groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/375—Thiols containing six-membered aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)

Abstract

La présente invention concerne de nouveaux générateurs photo-acides.
PCT/IB2006/003315 2005-11-16 2006-11-15 Composes photoactifs WO2007057773A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008540719A JP2009515944A (ja) 2005-11-16 2006-11-15 光活性化合物
EP06820954A EP1963919A2 (fr) 2005-11-16 2006-11-15 Composes photoactifs
KR1020087012503A KR101421743B1 (ko) 2005-11-16 2006-11-15 광활성 화합물

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US28084205A 2005-11-16 2005-11-16
US11/280,842 2005-11-16
US11/355,400 US7678528B2 (en) 2005-11-16 2006-02-16 Photoactive compounds
US11/355,400 2006-02-16

Publications (2)

Publication Number Publication Date
WO2007057773A2 WO2007057773A2 (fr) 2007-05-24
WO2007057773A3 true WO2007057773A3 (fr) 2007-11-15

Family

ID=37945428

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2006/003315 WO2007057773A2 (fr) 2005-11-16 2006-11-15 Composes photoactifs

Country Status (7)

Country Link
US (1) US7678528B2 (fr)
EP (1) EP1963919A2 (fr)
JP (1) JP2009515944A (fr)
KR (1) KR101421743B1 (fr)
CN (3) CN102161637B (fr)
TW (1) TW200730490A (fr)
WO (1) WO2007057773A2 (fr)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
JP4881692B2 (ja) * 2006-10-23 2012-02-22 富士フイルム株式会社 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法
US20080171270A1 (en) * 2007-01-16 2008-07-17 Munirathna Padmanaban Polymers Useful in Photoresist Compositions and Compositions Thereof
US20080187868A1 (en) * 2007-02-07 2008-08-07 Munirathna Padmanaban Photoactive Compounds
JP5364256B2 (ja) * 2007-06-13 2013-12-11 東京応化工業株式会社 化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法
US8252503B2 (en) * 2007-08-24 2012-08-28 Az Electronic Materials Usa Corp. Photoresist compositions
US8088548B2 (en) * 2007-10-23 2012-01-03 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions
JP5210610B2 (ja) * 2007-12-03 2013-06-12 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
JP5285897B2 (ja) * 2007-12-11 2013-09-11 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
EP2291872A1 (fr) 2008-06-27 2011-03-09 Universal Display Corporation Dopants ioniques réticulables
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
KR101660041B1 (ko) 2008-11-28 2016-09-26 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법, 신규 화합물 및 산발생제
JP5544212B2 (ja) * 2009-04-27 2014-07-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物およびその製造方法、酸発生剤
KR101807715B1 (ko) * 2009-05-28 2017-12-11 스미또모 가가꾸 가부시키가이샤 염 및 이를 함유하는 포토레지스트 조성물
JP6009730B2 (ja) * 2009-05-28 2016-10-19 住友化学株式会社 酸発生剤用の塩及びレジスト組成物
JP2010280600A (ja) * 2009-06-03 2010-12-16 Asahi Kasei Corp スルホニウム塩の製造方法
JP2011068603A (ja) * 2009-09-25 2011-04-07 Asahi Kasei Corp ジスルホニウム塩の製造方法
US8632948B2 (en) * 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
JP5608009B2 (ja) 2010-08-12 2014-10-15 大阪有機化学工業株式会社 ホモアダマンタン誘導体、その製造方法及びフォトレジスト組成物
JP5655563B2 (ja) * 2010-12-28 2015-01-21 Jsr株式会社 感放射線性樹脂組成物及びパターン形成方法
JP6039223B2 (ja) * 2011-04-26 2016-12-07 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
JP5449276B2 (ja) * 2011-09-02 2014-03-19 富士フイルム株式会社 感光性組成物に用いられる化合物
JP6414411B2 (ja) 2013-08-09 2018-10-31 ディーエスエム アイピー アセッツ ビー．ブイ．Ｄｓｍ Ｉｐ Ａｓｓｅｔｓ Ｂ．Ｖ． 積層造形用の低粘度液状放射線硬化型歯科アライナー成形型用樹脂組成物
CN109503761B (zh) 2013-11-05 2022-02-01 科思创(荷兰)有限公司 用于加成制造的稳定的基质填充的液体可辐射固化树脂组合物
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JP6394481B2 (ja) * 2015-04-28 2018-09-26 信越化学工業株式会社 レジスト組成物及びパターン形成方法
EP3294780A4 (fr) 2015-06-08 2018-11-21 DSM IP Assets B.V. Compositions de résines liquides durcissables par un rayonnement hybride uv/vis pour une fabrication additive
US10435535B2 (en) 2015-09-17 2019-10-08 3Dbotics, Inc. Material system and method for fabricating refractory material-based 3D printed objects
US9708442B1 (en) 2015-10-01 2017-07-18 Dsm Ip Assets, B.V. Liquid, hybrid UV/vis radiation curable resin compositions for additive fabrication
CN108472834B (zh) 2015-11-17 2021-05-25 帝斯曼知识产权资产管理有限公司 用于加成法制造的经改进的不含锑的可辐射固化组合物及其在熔模铸造工艺中的应用
KR102619528B1 (ko) 2015-12-09 2023-12-29 삼성전자주식회사 포토레지스트 조성물, 패턴 형성 방법 및 반도체 장치의 제조 방법
TWI662364B (zh) 2015-12-31 2019-06-11 Rohm And Haas Electronic Materials Llc 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法
TWI656111B (zh) * 2015-12-31 2019-04-11 Rohm And Haas Electronic Materials Llc 光酸產生劑
WO2017160845A1 (fr) 2016-03-14 2017-09-21 Dsm Ip Assets B.V. Compositions durcissables par un rayonnement pour la fabrication additive présentant une ténacité améliorée et une résistance à la température élevée
US11009790B2 (en) 2016-07-28 2021-05-18 Samsung Electronics Co., Ltd. Photoacid generator and photoresist composition including the same
JP2018109701A (ja) * 2017-01-04 2018-07-12 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 化学増幅型ポジ型フォトレジスト組成物およびそれを用いたパターン形成方法
JP7215654B2 (ja) 2017-12-15 2023-01-31 コベストロ （ネザーランズ） ビー．ブイ． 粘性熱硬化性樹脂を高温噴射して、積層造形を介して固体物品を作製するための組成物及び方法
WO2019133349A1 (fr) 2017-12-29 2019-07-04 Dsm Ip Assets, B.V. Compositions et articles pour l'impression 3d, et leurs procédés d'utilisation
WO2021042013A1 (fr) 2019-08-30 2021-03-04 Dsm Ip Assets B.V. Compositions de résine liquides durcissables par rayonnement uv/vis hybride pour la fabrication additive
WO2021220648A1 (fr) * 2020-04-27 2021-11-04 Jsr株式会社 Composition de résine sensible aux rayonnements, procédé de formation de motif de photorésine faisant appel à celle-ci et composé de sel d'acide sulfonique et générateur d'acide sensible aux rayonnements comprenant celui-ci
CN112592303B (zh) * 2020-12-22 2023-04-28 宁波南大光电材料有限公司 含双鎓盐结构的光致产酸剂、制备方法及光刻胶组合物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0795786A2 (fr) * 1996-03-11 1997-09-17 Fuji Photo Film Co., Ltd. Composition photosensible de type positif
US6051370A (en) * 1990-03-13 2000-04-18 Basf Aktiengesellschaft Radiation-sensitive mixture

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3924298A1 (de) * 1989-07-22 1991-02-07 Basf Ag Neue sulfoniumsalze und deren verwendung
DD295421A5 (de) 1990-06-19 1991-10-31 Humboldt-Universitaet Zu Berlin,Direktorat Fuer Forschung,De Positiv arbeitender photokopierlack mit chemischer verstaerkung
US5874616A (en) * 1995-03-06 1999-02-23 Minnesota Mining And Manufacturing Company Preparation of bis (fluoroalkylenesulfonyl) imides and (fluoroalkysulfony) (fluorosulfonyl) imides
US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
TW477913B (en) * 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
JP3890358B2 (ja) * 1996-03-11 2007-03-07 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
JPH09306497A (ja) * 1996-05-20 1997-11-28 Japan Storage Battery Co Ltd 鉛蓄電池用負極板
US6100198A (en) * 1998-02-27 2000-08-08 Micron Technology, Inc. Post-planarization, pre-oxide removal ozone treatment
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
TWI263866B (en) 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
JP3763239B2 (ja) 1999-01-18 2006-04-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物
EP1314725B1 (fr) * 2000-08-30 2008-03-19 Wako Pure Chemical Industries, Ltd. Compose de sel de sulfonium
KR20030029053A (ko) 2001-04-05 2003-04-11 아치 스페셜티 케미칼즈, 인코포레이티드 포토레지스트용 퍼플루오로알킬설폰산 화합물
CN1916760B (zh) * 2001-06-29 2010-10-13 Jsr株式会社 酸发生剂、磺酸、磺酸衍生物及辐射敏感树脂组合物
US7105267B2 (en) 2001-08-24 2006-09-12 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
US6818379B2 (en) * 2001-12-03 2004-11-16 Sumitomo Chemical Company, Limited Sulfonium salt and use thereof
JP4226255B2 (ja) 2002-03-12 2009-02-18 保土谷化学工業株式会社 ピレンスルホン酸オニウム塩化合物、該化合物の製造方法、該化合物を用いた感光性樹脂組成物およびこれを用いた感光性材料。
US20030235775A1 (en) * 2002-06-13 2003-12-25 Munirathna Padmanaban Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
US6841333B2 (en) * 2002-11-01 2005-01-11 3M Innovative Properties Company Ionic photoacid generators with segmented hydrocarbon-fluorocarbon sulfonate anions
US7217492B2 (en) * 2002-12-25 2007-05-15 Jsr Corporation Onium salt compound and radiation-sensitive resin composition
JP4380238B2 (ja) * 2002-12-25 2009-12-09 Ｊｓｒ株式会社 オニウム塩化合物、感放射線性酸発生剤およびポジ型感放射線性樹脂組成物
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
US7122294B2 (en) * 2003-05-22 2006-10-17 3M Innovative Properties Company Photoacid generators with perfluorinated multifunctional anions
JP4389485B2 (ja) 2003-06-04 2009-12-24 Ｊｓｒ株式会社 酸発生剤および感放射線性樹脂組成物
TWI366067B (en) * 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
JP4342256B2 (ja) 2003-09-19 2009-10-14 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005099348A (ja) * 2003-09-24 2005-04-14 Fuji Photo Film Co Ltd 平版印刷版原版
JP2005099456A (ja) 2003-09-25 2005-04-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4443898B2 (ja) 2003-11-13 2010-03-31 富士フイルム株式会社 感光性組成物及びそれを用いたパターン形成方法
JP4360928B2 (ja) 2004-02-16 2009-11-11 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005258124A (ja) 2004-03-12 2005-09-22 Fuji Photo Film Co Ltd 電子線、ｘ線又はｅｕｖ光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7521170B2 (en) 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
JP4866606B2 (ja) 2005-12-28 2012-02-01 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
WO2007124092A2 (fr) 2006-04-21 2007-11-01 Cornell Research Foundation, Inc. Composés et compositions générateurs de photoacides
US7390613B1 (en) * 2006-12-04 2008-06-24 Az Electronic Materials Usa Corp. Photoactive compounds
US7491482B2 (en) * 2006-12-04 2009-02-17 Az Electronic Materials Usa Corp. Photoactive compounds

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6051370A (en) * 1990-03-13 2000-04-18 Basf Aktiengesellschaft Radiation-sensitive mixture
EP0795786A2 (fr) * 1996-03-11 1997-09-17 Fuji Photo Film Co., Ltd. Composition photosensible de type positif

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KR101421743B1 (ko) 2014-07-30
CN102161637A (zh) 2011-08-24
KR20080066819A (ko) 2008-07-16
US20070111138A1 (en) 2007-05-17
WO2007057773A2 (fr) 2007-05-24
TW200730490A (en) 2007-08-16
CN102161635B (zh) 2013-01-02
EP1963919A2 (fr) 2008-09-03
US7678528B2 (en) 2010-03-16
CN102161636A (zh) 2011-08-24
CN102161635A (zh) 2011-08-24
JP2009515944A (ja) 2009-04-16

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