WO2007034747A1 - Dispositif de traitement au plasma - Google Patents

Dispositif de traitement au plasma Download PDF

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Publication number
WO2007034747A1
WO2007034747A1 PCT/JP2006/318381 JP2006318381W WO2007034747A1 WO 2007034747 A1 WO2007034747 A1 WO 2007034747A1 JP 2006318381 W JP2006318381 W JP 2006318381W WO 2007034747 A1 WO2007034747 A1 WO 2007034747A1
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WO
WIPO (PCT)
Prior art keywords
electrode
stage
movement range
dielectric
plasma processing
Prior art date
Application number
PCT/JP2006/318381
Other languages
English (en)
Japanese (ja)
Inventor
Setsuo Nakajima
Toshimasa Takeuchi
Junichi Matsuzaki
Satoshi Mayumi
Osamu Nishikawa
Naomichi Saito
Yoshinori Nakano
Makoto Fukushi
Yoshihiko Furuno
Original Assignee
Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2006105122A external-priority patent/JP4499055B2/ja
Priority claimed from JP2006105123A external-priority patent/JP4619315B2/ja
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to US12/067,808 priority Critical patent/US20090229756A1/en
Priority to CN200680032713XA priority patent/CN101258784B/zh
Publication of WO2007034747A1 publication Critical patent/WO2007034747A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges

Definitions

  • the present invention relates to a plasma processing apparatus that forms a plasma discharge near atmospheric pressure and exposes an object to be processed to the plasma discharge to perform a surface treatment.
  • the object to be processed is a dielectric such as a glass substrate. It is related with the atmospheric pressure plasma processing apparatus suitable for. Background art
  • An atmospheric pressure plasma processing apparatus that forms a plasma discharge near atmospheric pressure and performs a surface treatment by placing an object to be processed such as a glass substrate in the plasma discharge space is known.
  • a high-voltage electrode and a ground electrode are provided so as to face each other.
  • a solid dielectric layer is formed on the opposing surface of each electrode for stable discharge.
  • the solid dielectric layer is made of alumina sprayed or a ceramic plate.
  • the ground electrode doubles as a stage on which the workpiece is placed.
  • a high voltage electrode is disposed opposite to the workpiece on the ground electrode / stage.
  • an electric field is applied between the high-voltage electrode and the ground electrode / stage, and an atmospheric pressure plasma discharge is formed.
  • a process gas according to the purpose of treatment is introduced into this atmospheric pressure plasma discharge, and it is turned into plasma and reacts by contacting with the object to be treated, whereby the surface of the object to be treated is processed.
  • Patent Document 1 JP 2004-228136 A
  • the object to be processed is often made of a dielectric such as glass. Therefore, if a workpiece made of a dielectric material is substituted for the solid dielectric layer of the stage, there is no need to provide a solid dielectric layer on the metal surface of the stage itself. In that case, arc discharge prevention Therefore, it is desirable to completely cover the metal surface of the stage with the object to be processed and to slightly protrude the peripheral edge of the object to be processed from the metal surface of the stage.
  • the present invention has been made on the basis of the above considerations.
  • a surface treatment is performed in an apparatus for subjecting a processing object mainly composed of a dielectric such as a glass substrate to a plasma discharge in the vicinity of atmospheric pressure.
  • a first stage part having an exposed first metal surface (main installation surface made of metal) and a second metal surface (solid side dielectric part) covered with a second dielectric surface (side dielectric part) ( And a second stage part (side part) provided on the outer periphery of the first stage part, and on the first metal surface of the first stage part.
  • the workpiece can be used as a solid dielectric layer on the first metal surface of the stage, and the manufacturing cost can be kept low without the need to provide a thermal spray film or a solid dielectric layer of a ceramic plate on the first metal surface.
  • An electric field can also be applied between the electrode in the second movement range and the second stage part, which causes a running discharge before the electrode enters the first movement range.
  • the first metal surface preferably has a slightly smaller area than the workpiece.
  • the entire first metal surface can be covered with the main portion of the object to be processed. It is preferable that the peripheral portion of the object to be processed is installed on the second stage portion.
  • the thickness and dielectric constant of the solid dielectric layer of the second stage portion are set so that a plasma discharge is formed between the electrode in the second movement range and the second stage portion. Is preferred.
  • the run-up discharge before the electrode enters the first movement range can surely occur, and the discharge state at the end of the main part of the workpiece can be reliably stabilized.
  • the solid dielectric layer of the second stage part is an inner dielectric part (periphery installation part) where the peripheral part of the workpiece is to be installed, and the first stage part is opposite to the inner dielectric part. It is preferable to have an outer dielectric portion that is disposed on the side and should protrude from the peripheral edge of the workpiece.
  • At least the outer dielectric portion of the inner dielectric portion and the outer dielectric portion is disposed corresponding to the second metal surface and covers the second metal surface.
  • the running discharge can be formed outside the peripheral edge of the workpiece.
  • a thickness and a dielectric constant of the outer dielectric portion are set such that a plasma discharge is formed between the electrode in the second movement range and the outer dielectric portion.
  • the run-up discharge can be rubbed so as to be formed on the outer dielectric portion outside the peripheral portion of the workpiece.
  • the ratio between the thickness of the outer dielectric portion and the dielectric constant is substantially the same as the ratio between the thickness of the workpiece and the dielectric constant.
  • the dielectric constant and thickness of the outer dielectric part are set so that the electrostatic capacity per unit area of the outer dielectric part is equal to the electrostatic capacity per unit area of the workpiece! I like it.
  • a width of the electrode along the relative movement direction is a size that can extend from the outer dielectric portion to the first stage portion.
  • the electric field is not only present on the end of the main part of the workpiece but also on the outer dielectric part. Therefore, it is possible to prevent electric field concentration from occurring on the end portion of the main portion of the object to be processed, and to ensure the good processing of the end portion of the main portion of the object to be processed.
  • the width of the electrode along the relative movement direction is at least larger than the width of the inner dielectric portion along the relative movement direction.
  • the first metal surface may protrude toward the electrode from the second metal surface (a bonding surface between the second metal portion and the solid dielectric layer).
  • the surface of the outer dielectric portion may protrude from the first metal surface toward the electrode.
  • the dielectric constant of the outer dielectric part is greater than the dielectric constant of the workpiece! / Suitable for cases.
  • the joint surface between the second metal part and the solid dielectric layer protrudes from the first metal surface to the electrode side. Is preferred.
  • the surface of the outer dielectric portion protrudes from the first metal surface to the electrode side by substantially the same size as the thickness of the object to be processed.
  • the flow state of the process gas between the electrode and the second stage section during the run-up discharge should be substantially the same as the flow state between the electrode and the object to be processed during normal plasma discharge. Can do.
  • the surface of the inner dielectric portion is flush with the surface of the first metal.
  • the surface of the inner dielectric part is preferably continuous with the surface of the first metal.
  • the surface of the inner dielectric portion is flush with the surface of the first metal, and the back surface of the inner dielectric portion becomes a slope inclined toward the front side toward the first stage portion.
  • the force may be smaller as the first stage portion is approached (see FIG. 7).
  • the overall dielectric constant of the inner dielectric portion and the peripheral portion of the workpiece placed thereon approaches the dielectric constant of the workpiece alone as it moves toward the first stage portion.
  • Can be. Therefore, the plasma discharge state at the run-up discharge portion on the peripheral edge of the workpiece is brought closer to the plasma discharge state at the normal discharge portion as the normal discharge portion is approached, and the peripheral edge of the workpiece and the edge of the main portion are moved. It is possible to prevent the discharge state at the boundary of the part from becoming discontinuous.
  • the inner dielectric portion and the outer dielectric portion are integrally connected.
  • the second metal part can be prevented from being exposed at the boundary between the inner dielectric part and the outer dielectric part, and the second metal part can be passed through the boundary between the inner dielectric part and the outer dielectric part. It is possible to prevent creeping discharge, etc. from falling.
  • the inner dielectric portion and the outer dielectric portion may be separated.
  • a step is formed between the inner dielectric portion and the outer dielectric portion.
  • the end surface of the object to be processed can reach the step, and the object to be processed can be positioned reliably.
  • first metal part of the first stage part and the second metal part of the second stage part are in contact with each other or are preferably continuous with each other. It is also preferred to be placed on the back side.
  • the plasma discharge advancing portion and the regular plasma discharge portion can be continuous, and the end portion of the main portion of the workpiece can be processed. Reasonableness can be ensured more reliably.
  • the stage comprises a stage body made of metal
  • the portion inside the peripheral edge of the stage main body has the exposed first metal surface to become the first stage portion
  • a peripheral portion of the stage body has the second metal surface covered with the solid dielectric layer, and the second stage portion is constituted by the peripheral portion of the stage main body and the solid dielectric layer. I like to talk!
  • the first metal part of the first stage part and the second metal part of the second stage part can be integrated, and when the electrode extends from the second movement range to the first movement range, plasma discharge is promoted. Part It is possible to ensure that the regular plasma discharge part continues.
  • the electrode travels from the third movement range to the first movement range via the second movement range, the electrode straddles the second movement range and the third movement range, and is closest to the first movement range. It is preferable that the power supply circuit starts supplying a voltage for the plasma discharge to the electrode when a predetermined position is reached.
  • the electric field direction of the electrode force at the start of voltage supply can be reliably directed to the second metal, and the electrode force can also be prevented from causing abnormal discharge.
  • the electrode may straddle the second movement range and the third movement range. In that case, it is preferable that the partial force of about 30 to 70% of the electrode is in the second movement range, and the rest is in the third movement range.
  • the partial force of about 50% of the electrode is in the second movement range, and the remaining part is in the third movement range.
  • the width along the relative movement direction of the electrode may be larger or equal to the width along the relative movement direction of the second stage portion (and hence the second movement range). It ’s small.
  • the predetermined position may be set between a position straddling the second movement range and the third movement range and at least before entering the first movement range! /.
  • the predetermined position is a position straddling the second movement range and the third movement range and in the immediate vicinity of the first movement range. May be.
  • the predetermined position exceeds the position straddling the second movement range and the third movement range, and the entire width direction of the electrode is the second movement. It may be a position within the range.
  • the stage further includes an insulating third stage portion provided on the opposite side of the second stage portion from the first stage portion side.
  • the electrode force in the third movement range is preferably opposed to the third stage portion.
  • the electrode can stand by on the third stage portion.
  • a processing gas passage may be formed outside the second stage portion between the electrode and the third stage portion.
  • the surface of the third stage part is preferably flush with the surface of the solid dielectric layer of the second stage part.
  • the present invention relates to an atmospheric pressure plasma processing apparatus for subjecting an object to be processed having a dielectric as a main component to a surface treatment by exposing it to a plasma discharge near atmospheric pressure.
  • the stage On the first metal surface of the first stage portion, the stage is set such that the object to be processed protrudes the peripheral portion toward the second stage portion.
  • a first electrode relatively moved in a range including a third movement range on the opposite side;
  • the first electrode is disposed on the third movement range side, and is integrated with the first electrode, and includes the first movement range, the second movement range, and the third movement range with respect to the stage.
  • the first electrode moves between the second movement range and the third movement range.
  • Straddle position and A first power supply circuit that starts supplying a voltage for the plasma discharge to the first electrode when a predetermined position between the first movement range and a position closest to the first movement range is reached;
  • the second electrode reaches a predetermined position between a position straddling the second movement range and the third movement range and a position closest to the first movement range, the second electrode is moved to the second electrode.
  • a second power supply circuit for starting voltage supply for plasma discharge.
  • the workpiece can be used as a solid dielectric layer on the first metal surface of the stage, and the manufacturing cost can be kept low without the need to provide a thermal spray film or a solid dielectric layer of a ceramic plate on the first metal surface.
  • An electric field can also be applied between the electrode in the second movement range and the second stage part, which causes a running discharge before the electrode enters the first movement range.
  • the electric field direction as much as the first electrode force can be reliably directed to the second metal, and then By starting voltage supply to the second electrode when the two electrodes reach a predetermined position, the electric field direction of the second electrode force can be surely directed to the second metal. In this way, by sequentially starting the voltage supply to the first and second electrodes, it is possible to prevent abnormal discharge and electric field concentration from occurring when the voltage supply is started.
  • Examples of the discharge used for the surface treatment of the present invention include corona discharge, creeping discharge, dielectric barrier discharge, and glow discharge.
  • a preferred discharge mode is a glow discharge in the vicinity of atmospheric pressure (approximately normal pressure).
  • the vicinity of atmospheric pressure means a range of 1. 013 X 10 4 to 50. 663 X 10 4 Pa, and considering the ease of pressure adjustment and the simplification of the device configuration, 1.333 X 10 4 to 10. 664 X 10 4 Pa force S preferred, 9. 331 X 10 4 to 10. 397 X 10 4 Pa force S preferred.
  • the workpiece is substituted as a solid dielectric layer on the first metal surface of the stage.
  • the electric field can also be applied between the electrode in the second movement range and the second stage part.
  • FIG. 1 is a front sectional view showing an outline of an atmospheric pressure plasma processing apparatus according to a first embodiment of the present invention.
  • FIG. 2 is a front sectional view showing a state in which the substrate is set on the stage in the substrate processing by the atmospheric pressure plasma processing apparatus.
  • FIG. 3 is a front cross-sectional view showing a state where an electrode enters a second movement range and a running discharge is formed on an outer dielectric part in substrate processing by the atmospheric pressure plasma processing apparatus.
  • FIG. 4 is a front cross-sectional view showing a state in which an electrode covers the entire second stage part and a running discharge is also formed on the peripheral part of the substrate in the substrate processing by the atmospheric pressure plasma processing apparatus.
  • FIG. 5 In the substrate processing by the above atmospheric pressure plasma processing apparatus, the electrode comes to a position over the upper position of the end portion of the first stage portion and on the end portion of the main portion of the substrate. It is front sectional drawing which shows the state in which regular plasma discharge was formed.
  • FIG. 6 is a front cross-sectional view showing a state where plasma processing is performed on a substantially central portion of the main portion of the substrate in the substrate processing by the atmospheric pressure plasma processing apparatus.
  • FIG. 7 is a front sectional view partially showing an outline of the atmospheric pressure plasma processing apparatus according to the second embodiment of the present invention (modified example of the solid dielectric layer).
  • FIG. 8 is a front sectional view partially showing an outline of such a normal pressure plasma processing apparatus according to a third embodiment of the present invention (modified example of the solid dielectric layer).
  • FIG. 9 is a front sectional view partially showing an outline of the atmospheric pressure plasma processing apparatus according to the fourth embodiment of the present invention (modified example of the solid dielectric layer).
  • FIG. 10 is a front cross-sectional view schematically showing an atmospheric pressure plasma processing apparatus according to a fifth embodiment of the present invention.
  • FIG. 13 A front sectional view showing a state when the central electrode reaches the predetermined position in the substrate processing by the atmospheric pressure plasma processing apparatus according to the fifth embodiment.
  • the left end electrode reaches the predetermined position and the right end electrode is in a position straddling the first movement range and the second movement range.
  • Front sectional view showing a state in which the entire processing unit is positioned within the first movement range and the main part of the substrate is subjected to plasma processing in the substrate processing by the atmospheric plasma processing apparatus according to the fifth embodiment. It is.
  • FIG. 16 In the fifth embodiment, a state in which the right end electrode has reached the predetermined position is a modified example in which the predetermined position serving as the point of voltage supply start is set when the entirety of each electrode is within the second movement range. It is front sectional drawing of the atmospheric pressure plasma processing apparatus shown by.
  • a sixth embodiment of the present invention in which an atmospheric pressure plasma processing apparatus having a single electrode wider than the second stage unit is reached at a predetermined position where the electrode straddles the second movement range and the third movement range. It is front sectional drawing shown in the state when doing.
  • FIG. 18 is a front cross-sectional view showing a modified example in which the position where the electrode has reached just before the first movement range in the sixth embodiment is a predetermined position serving as a voltage supply start point.
  • FIG. 1 shows a schematic configuration of the atmospheric pressure plasma processing apparatus M.
  • the atmospheric pressure plasma processing apparatus M includes a processing unit 10 and a stage 20.
  • the processing unit 10 includes a high voltage electrode 11 and a holder 12 that holds the electrode 11.
  • the processing unit 10 and the high voltage electrode 11 extend long in the direction perpendicular to the paper surface of FIG.
  • a power supply circuit 30 is connected to the high voltage electrode 11.
  • the power supply circuit 30 supplies a voltage for forming an atmospheric pressure plasma discharge to each electrode 11.
  • the supply voltage may be a continuous wave voltage such as a sine wave or an intermittent wave voltage such as a Nors wave.
  • a ceramic solid dielectric plate 13 as a solid dielectric layer is provided at the bottom of the processing unit 10 including the lower surface of the high voltage electrode 11.
  • the force not shown is connected to the processing unit 10 by a process gas supply line from a process gas source.
  • This process gas supply line is blown out below the process gas power treatment unit 10.
  • a gas type suitable for the purpose of treatment is used. For example, in etching and water repellent treatments, CF
  • a stage 20 is installed below the processing unit 10.
  • the gap between the lower surface of the processing unit 10 (the lower surface of the solid dielectric plate 13) and the stage 20 is about several millimeters. In the figure, the above gap is exaggerated.
  • the stage 20 includes a first stage portion 21, a second stage portion 22 provided on the outer peripheral portion of the first stage portion 21, and an outer frame 23 provided on the outer peripheral portion of the second stage portion 22. (Third stage section).
  • the first stage portion 21 is made of metal such as aluminum (first metal) and has a square shape in plan view.
  • the depth of the first stage portion 21 (the dimension in the direction perpendicular to the paper surface of FIG. 1) is almost the same as the length of the electrode 11! /.
  • the upper surface 21a (first metal surface) of the first stage portion 21 made of metal is not provided with a solid dielectric layer, and the metal surface 21a is exposed.
  • the metal surface 21a has a rectangular shape in plan view and is horizontal.
  • a substrate (object to be processed) W to be processed is placed directly on the exposed first metal surface 21a.
  • the substrate W is made of a dielectric material such as glass for large liquid crystal or a color filter, and has a quadrangular shape in plan view.
  • the area of the first metal surface 21a (the area of the first stage portion 21) is slightly smaller than the area of the substrate W. Therefore, the main portion Wa inside the peripheral portion Wb of the substrate W covers the entire first metal surface 21a, and the peripheral portion Wb of the substrate W protrudes from the first metal surface 21a to the outside, that is, the second stage portion 22 side. It is supposed to be.
  • the amount of protrusion of the substrate peripheral edge Wb from the first metal surface 21a is, for example, about 10 mm.
  • the second stage unit 22 includes a second metal 24 and a solid dielectric layer 25.
  • the second metal 24 is made of a metal such as aluminum.
  • the second metal 24 is continuous with the first metal constituting the first stage portion 21.
  • the first and second metals 21 and 24 constitute the stage body 20A!
  • the stage 20 is provided with a stage body 20A having a rectangular shape in plan view that is made of aluminum and the like.
  • the periphery of the main body 20A is the second metal 24.
  • the stage body 20A (first and second metals 21, 24) is electrically grounded.
  • the stage body 20A also serves as a ground electrode for the high voltage electrode 11! /.
  • the upper surface 24a (second metal surface) of the second metal 24 of the second stage portion 22 is located below the first metal surface 21a of the first stage portion 21, and a step is formed between them. ing. (The first metal surface 21a protrudes above the second metal surface 24a.) The second metal surface 24a is level.
  • a solid dielectric layer 25 is provided on the second metal surface 24a.
  • the solid dielectric layer 25 is formed only on the peripheral edge 24 of the peripheral edge 24 of the stage main body 20A and the main part 21 inside thereof. Is provided.
  • the solid dielectric layer 25 covers the entire second metal surface 24a.
  • the solid dielectric layer 25 is made of a ceramic member such as alumina (Al 2 O 3).
  • the solid dielectric layer 25 includes an inner dielectric portion 26 on the first stage portion 21 side and an outer dielectric portion 27 on the outer frame 23 side. The inner and outer dielectric parts 26 and 27 are connected together.
  • the inner end surface of the inner dielectric portion 26 (the end surface on the first stage portion 21 side) abuts against a step surface between the first metal surface 21a and the second metal surface 24a.
  • the upper surface of the inner dielectric part 26 is flush with the first metal surface 21a!
  • a peripheral edge Wb of the substrate W is arranged on the upper surface of the inner dielectric part 26.
  • the outer dielectric part 27 is thicker than the inner dielectric part 26, and protrudes above the upper surface of the inner dielectric part 26 and the first metal surface 21a.
  • a step is formed between the outer dielectric part 27 and the inner dielectric part 26. This step is inside the outer end of the second metal 24 (first stage 2
  • the peripheral end surface of the substrate W is applied to the step surface between the outer dielectric portion 27 and the inner dielectric portion 26.
  • the height of the step between the outer dielectric part 27 and the inner dielectric part 26 is substantially the same as the thickness of the substrate W. Therefore, the upper surface of the outer dielectric portion 27 and the upper surface of the substrate W become substantially flush! /.
  • the outer dielectric portion 27 is positioned outside the substrate W.
  • outer end face of the outer dielectric portion 27 protrudes outward from the second metal 24.
  • An outer frame 23 having an insulating force such as grease is attached to the outer surface of the outer dielectric portion 27 and the second metal 24.
  • the ratio between the thickness of the outer dielectric portion 27 and the dielectric constant is set to be substantially the same as the ratio between the thickness of the substrate W and the dielectric constant.
  • the discharge state on the second stage 22 becomes substantially the same as the discharge state on the first stage 21.
  • the thickness of the outer dielectric portion 27 is set to be approximately twice that of the substrate W.
  • Thickness t of outer dielectric part 27 of solid dielectric layer 25 made of alumina with relative dielectric constant ⁇ 10 t
  • the left and right width dimensions of the second stage portion 22 are smaller than the left and right width dimensions of the high-voltage electrode 11. Accordingly, the width of the high-voltage electrode 11 becomes a size that can be straddled between the second stage portion 22 and the first stage portion 21.
  • the atmospheric pressure plasma processing apparatus M is provided with a moving mechanism 40.
  • the moving mechanism 40 is connected to the processing unit 10.
  • the processing mechanism 10 is reciprocally moved left and right (in a direction perpendicular to the longitudinal direction of the electrode 11) by the moving mechanism 40.
  • the high voltage electrode 11 is moved relative to the stage 20 from side to side.
  • the relative movement range of the high-voltage electrode 11 includes a first movement range R1 that faces the first stage portion 21 and a second movement range R2 that faces the second stage portion 22 (see FIGS. 3 to 5). It is.
  • the high voltage electrode 11 in FIG. 5 faces the end of the first stage portion 21 and the second stage portion 22 and straddles the first movement range R1 and the second movement range R2.
  • the moving mechanism 40 may be connected to the stage 20 so that the stage 20 is reciprocated left and right.
  • the processing unit 10 is retracted to the outside (for example, the left) from the stage 20, Place substrate W on stage 20.
  • the main part Wa inside the peripheral part Wb of the substrate W is directly installed on the first metal surface 21a of the stage body 20A, and the peripheral part Wb is installed on the inner dielectric part 26 of the second stage part 22. . Since the top surface of the inner dielectric portion 26 and the first metal surface 21a are flush with each other, it is possible to prevent a gap from being formed between the back surface of the substrate W and the stage 20.
  • the end surface of the substrate W is directed to the step surface between the inner dielectric portion 26 and the outer dielectric portion 27. As a result, the substrate W can be reliably positioned.
  • the upper surface (front side surface) of the substrate W is flush with the upper surface of the outer dielectric portion 27.
  • the processing unit 10 is moved in the arrow direction (right direction) in FIG. 2 by the moving mechanism 40. To go. As a result, as shown in FIG. 3, the high-voltage electrode 11 enters the second movement range R2 facing the second stage portion 22. At this time, a voltage is supplied from the power supply circuit 30 to the high voltage electrode 11.
  • the voltage supply start timing is set at a time when the high-voltage electrode 11 has not yet reached the end of the substrate W and is positioned on the second stage portion 22 (preferably the outer dielectric portion 27). It is preferable to do this. As a result, an electric field is applied between the high-voltage electrode 11 and the second metal 24 below the high-voltage electrode 11, and an atmospheric pressure plasma discharge is generated therebetween.
  • Atmospheric pressure plasma discharge initially occurs only on the outer dielectric 27 of the solid dielectric layer 25.
  • a running plasma discharge D2 can be formed outside the substrate W.
  • the outer dielectric portion 27 functions as a solid dielectric layer on the surface of the second metal 24 and contributes to stable discharge.
  • the thickness and the dielectric constant of the outer dielectric portion 27 it is possible to obtain a discharge state substantially the same as a normal plasma discharge D1 on the substrate W described later. Since the upper surface of the outer dielectric 27 and the upper surface of the substrate W are flush with each other, the gap between the processing unit 10 and the outer dielectric 27 in the second position is defined between the processing unit 10 and the substrate W in the first position.
  • the flow state of the process gas during the run-up discharge D2 can be made substantially the same as the flow state during the normal plasma discharge D1 described later.
  • the processing unit 10 moves in the direction of the arrow, the high-voltage electrode 11 comes to be positioned above the peripheral edge Wb of the substrate W.
  • the run-up discharge D2 extends on the peripheral edge Wb of the substrate W.
  • the front side surface of the substrate peripheral part Wb can be subjected to plasma treatment.
  • the substrate peripheral portion Wb functions as a solid dielectric layer on the surface of the second metal 24 together with the inner dielectric portion 26 and contributes to stable discharge.
  • the combined dielectric constant of the peripheral edge Wb of the substrate and the inner dielectric portion 27 is slightly different from the dielectric constant of the outer dielectric portion 27 alone and the dielectric constant of the main substrate Wa alone, and the discharge state is a run-up on the outer dielectric portion 27.
  • the peripheral edge Wb of the substrate is not a problem because it is a part unrelated to the product quality.
  • the high-voltage electrode 11 extends from the second movement range R2 to the end of the first movement range R1.
  • the temperature of the electrode 11 is increased by the running discharge D2 on the second stage portion 22, and the ceramic solid dielectric plate 13 is prepared for discharge. Therefore, the discharge state on the end portion Wae of the main portion of the substrate W can be further stabilized.
  • the run-up discharge part D2 and the regular discharge part D1 are continuous, the plasma can move back and forth between the two discharge parts Dl and D2, and a homogeneous plasma can be obtained as a whole. Therefore, the end portion Wae of the main portion of the substrate W can be processed in the same manner as the central portion of the substrate W, and the processing can be made uniform.
  • the processing unit 10 further moves in the direction of the arrow.
  • the entire electrode 11 is located in the first movement range R1 and faces only the first stage portion 21.
  • a regular plasma discharge D1 is formed between the electrode 11 in the first movement range R1 and the main portion Wa of the substrate W, and the main portion Wa of the substrate W can be subjected to plasma treatment.
  • the main portion Wa of the substrate W functions as a solid dielectric layer of the first stage portion 21. Accordingly, it is possible to keep the manufacturing cost low without having to provide the solid dielectric layer on the first metal surface 21a. Therefore, it is possible to easily increase the size of the stage 20 corresponding to the large area of the substrate W. Can do.
  • the processing unit 10 further moves in the direction of the arrow, and reaches the end on the opposite side (right side in FIG. 6) of the stage 20. As a result, the entire main portion Wa of the substrate W can be plasma-processed.
  • the processing unit 10 may be reciprocated left and right.
  • the processing unit 10 is retracted outside the stage 20 and the substrate W is picked up.
  • FIG. 7 shows a second embodiment of the present invention.
  • the bottom surface of the inner dielectric portion 26 of the solid dielectric layer 25 becomes a slope inclined upward toward the inner end (opposite to the outer dielectric portion 27 side), and the cross section of the inner dielectric portion 26 is increased.
  • the shape is a triangle that becomes thinner as it goes toward the inner edge.
  • the total dielectric constant of the inner dielectric portion 26 and the peripheral portion Wb of the substrate W placed above the inner dielectric portion 26 gradually decreases toward the inner end of the inner dielectric portion 26, and the substrate W alone Approach the dielectric constant ⁇
  • the plasma discharge state at the run-up discharge portion D2a on the peripheral edge Wb of the substrate W can be brought closer to the normal plasma discharge D1 as it approaches the main portion Wa of the substrate.
  • FIG. 8 shows a third embodiment of the present invention.
  • the second metal 24 of the second stage portion 22 is made of a metal that is separate from the stage main body 20A constituting the first stage portion 21.
  • the inner end portion of the second metal 24 is abutted against and directly contacts the first stage portion 21.
  • the first stage portion 21 is provided with a ground wire, and the second metal 24 is a force that is electrically grounded via the first stage portion 21. Even if the first wire is drawn directly from the second metal 24. Good.
  • the inner dielectric portion 26 and the outer dielectric portion 27 of the solid dielectric layer 25 are separated from each other.
  • the inner dielectric part 26 is made of a ceramic such as alumina, and has a V-shaped frame with an L-shaped cross section.
  • the peripheral edge Wb of the substrate W is addressed to the frame-shaped inner dielectric portion 26.
  • a step for fitting the inner dielectric portion 26 is formed in the inner end portion of the upper surface of the second metal 24.
  • the outer dielectric portion 27 is configured by a flat plate made of a solid dielectric such as ceramic, and is disposed on the upper surface of the second metal 24.
  • the outer dielectric portion 27 may be a sprayed film sprayed on the upper surface of the second metal 24.
  • the thickness of the outer dielectric portion 27 is smaller than the substrate W.
  • the ratio between the thickness of the outer dielectric part 27 and the dielectric constant is substantially the same as the ratio between the thickness of the substrate W and the dielectric constant.
  • the upper surface of the second metal 24 is positioned above the first metal surface 21a so that the upper surface of the outer dielectric portion 27 is flush with the upper surface of the substrate W.
  • FIG. 9 shows a fourth embodiment of the present invention.
  • the second metal 24 straddles the back side of the outer dielectric part 27 and the back side of the inner dielectric part 26 of the solid dielectric layer 25, but in the fourth embodiment, the second metal 24 Metal 24 is provided only on the back side of outer dielectric 27.
  • the back side of the inner dielectric part 26 is not provided with a metal that can serve as a ground electrode.
  • the second metal 24 is separated from the first stage portion 21 by a distance corresponding to the width of the inner dielectric portion 26.
  • a ground wire is connected to the second metal 24 separately from the first stage portion 21.
  • the run-up discharge D2 is formed only above the outer dielectric part 27, and is not formed above the inner dielectric part 26 and the peripheral edge Wb of the substrate W.
  • the electrode 11 has a width dimension so that the upper position force of the outer dielectric portion 27 also straddles the upper position of the first stage portion 21. Therefore, when an electric field is applied between the front end in the traveling direction of the electrode 11 (the right end in FIG. 9) and the end of the first stage portion 21, the rear end (the left end of the electrode 11) Part) and the second metal 24, the electric field continues to be applied, and the run-up discharge D2 on the outer dielectric part 27 continues. Therefore, the electric field does not concentrate only on the end portion of the first stage portion 21.
  • the front end of the electrode 11 in the traveling direction also passes over the outer dielectric portion 27 before reaching the end of the first stage portion 21, and is heated by the run-up discharge D2 at this time to be solid.
  • a drying process is performed on the front end of the dielectric plate 13 in the traveling direction. This As a result, a good plasma discharge D 1 can be formed on the end portion Wae of the main portion Wa of the substrate W, and the surface treatment of the end portion Wae can be performed satisfactorily.
  • FIG. 10 shows a fifth embodiment of the present invention.
  • the processing unit 10 of the atmospheric pressure plasma processing apparatus M of the fifth embodiment is provided with three (plural) high voltage electrodes 11, 11 and 11.
  • the sign of the right electrode is 11A
  • the sign of the center electrode is 11B
  • the sign of the left electrode is 11C (see FIGS. 11 to 11). 15).
  • Each electrode 11 has a rectangular cross section and extends long in the direction perpendicular to the plane of FIG. Force not shown In the figure, a ceramic solid dielectric layer as a solid dielectric layer is provided on the lower surface of each electrode 11.
  • the three electrodes 11, 11, 11 are arranged at equal intervals on the left and right.
  • the power supply circuit 30 supplies a voltage for forming an atmospheric pressure plasma discharge to each electrode 11.
  • the power supply circuit 30 is provided with three (a plurality of) switch portions 31 corresponding to the electrodes 11.
  • the switch portion 31A is connected to the electrode 11A
  • the switch portion 31B is connected to the electrode 11B
  • the switch portion 31C is connected to the electrode 11C (see FIGS. 11 to 15).
  • the gap between the left and right electrodes 11, 11 is larger than the actual gap between the lower surface of the processing unit 10 (the lower surface of the solid dielectric layer of each electrode 11) and the stage 20.
  • the first stage portion 21 of the stage 20 and the second metal portion 24 of the second stage portion 22 outside the stage 20 are made of separate metals and are in contact with and joined to each other.
  • the second metal 24 is a force that is electrically grounded via the first stage portion 21.
  • a ground wire may be directly connected to the second metal 24 without involving the first stage portion 21.
  • the first metal constituting the first stage portion 21 and the second metal 24 of the second stage portion 22 may be integrally connected.
  • the stage 20 is provided with a stage main body having a metal force such as aluminum, and the central portion (the inner portion from the peripheral portion) of the stage main body becomes the first metal 21 (first stage portion) whose surface is exposed, and the stage main body The peripheral force becomes the second metal 24 covered with the solid dielectric layer 25.
  • the width in the left-right direction of the inner dielectric portion 26 of the second stage portion 22 (the width of the substrate peripheral portion Wb) is It is smaller than the width of the electrode 11 in the left-right direction.
  • the lateral width of the outer dielectric portion 27 is smaller than the distance between the left end portion of the left end electrode 11C and the right end portion of the right end electrode 11A, which is larger than the lateral width of each electrode 11.
  • the second metal 24 of the second stage portion 22 need not be provided on the back side (lower surface) of the inner dielectric portion 26 as long as it is provided only on the back side (lower surface) of the outer dielectric portion 27.
  • the inner dielectric part 26 and the outer dielectric part 27 may have different dielectric constants, which may be separate from each other.
  • the second metal 24 of the second stage portion 22 and the outer end portion of the solid dielectric layer 25 are flush with each other.
  • the outer surfaces of the second metal 24 and the solid dielectric layer 25 are attached with an outer frame made of an insulator such as a resin, ie, a third stage portion 23.
  • the outer dielectric portion 27 of the solid dielectric layer 25 may protrude outward from the second metal 24.
  • the three electrodes 11, 11, 11 of the processing unit 10 are integrally moved by the moving mechanism 40 so as to be reciprocated left and right (in a direction perpendicular to the longitudinal direction of the electrodes 11). It has become.
  • the movement range of each electrode 11 includes a first movement range R1 that faces the first stage portion 21, a second movement range R2 that faces the second stage portion 22, and a third movement range. Including the third movement range R3 facing the stage 23.
  • the moving mechanism 40 is connected to the stage 20 so that the stage 20 can be reciprocated left and right.
  • the switch portions 31A to 31C corresponding to all the electrodes 11A to 11C. Is turned off, the entire processing unit 10 is retracted to the outside (for example, the left side) of at least the second stage portion 22 of the stage 20, and the substrate W is set on the stage 20. That is, the main portion Wa inside the peripheral portion Wb of the substrate W is placed on the first metal surface 21a of the first stage portion 21, and the peripheral portion Wb is placed on the inner dielectric portion 26 of the second stage portion 22. Install.
  • the end surface of the substrate W is directed to the step surface between the inner dielectric portion 26 and the outer dielectric portion 27. This ensures that substrate W is It can actually be positioned.
  • the upper surface (front side surface) of the substrate W is flush with the upper surface of the outer dielectric portion 27.
  • the processing unit 10 is moved in the arrow direction (right direction) in FIG. 11 by the moving mechanism 40.
  • the right end electrode 11A force eventually reaches a predetermined position across the second movement range R2 corresponding to the second stage portion 22 and the third movement range R3 corresponding to the third stage portion 23. Come to be located.
  • a predetermined position about 30 to 70% of the electrode 11A is in the second movement range R2, and the rest is in the third movement range R3.
  • about 50% of the electrode 11A is in the second movement range R2, and the remainder is in the third movement range R3.
  • the switch unit 31A is turned on, and voltage supply from the power supply circuit 30 to the right end electrode 11A is started. As a result, an electric field can be applied between the right end electrode 11A and the second metal 24 of the second stage portion 22.
  • the right end electrode 11A faces the second metal 24, so that the electric field direction from the electrode 11A can be surely directed to the second metal 24.
  • the electrode 11A force can also prevent abnormal discharge from occurring in the surrounding metal member.
  • the entire electrode 11A is outside the second movement range R2, as long as a part of the electrode 11A enters the second movement range R2 and is located on the left side of the predetermined position, voltage supply is performed. Since the voltage is supplied only when the predetermined position is reached, the electric field from the electrode 11A can be prevented from locally concentrating on the outer end portion of the second metal 24. This can prevent the solid dielectric layer 25 and the like from being damaged.
  • the gap between the processing unit 10 and the outer dielectric part 27 in the second position is set between the processing unit 10 and the substrate W in the first position.
  • the flow of the process gas during the run-up discharge D2 can be changed to the normal plasma discharge D1 described later.
  • the distribution state can be substantially the same.
  • the run-up discharge D2 is started, so that the width of the second stage portion 22 need not be larger than necessary.
  • the processing unit 10 is further moved in the right direction while maintaining the ON state of the switch portion 31A and continuing the voltage supply to the right end electrode 11A.
  • the run-off discharge portion D2 between the electrode 11A and the second stage portion 22 also moves to the right.
  • the center electrode 11B force is located at the predetermined position across the second and third movement ranges R2 and R3.
  • the switch unit 31B is turned on, and voltage supply from the power supply circuit 30 to the central electrode 11B is started.
  • an electric field can be applied between the central electrode 11B and the second metal 24 while preventing abnormal discharge and electric field concentration of the central electrode 11B force, and between the central electrode 11B and the outer dielectric portion 27. Can also generate run-up discharge D2.
  • the processing unit 10 is further moved in the right direction while maintaining the ON state of the switch portions 31A and 31B and continuing the voltage supply to the right end electrode 11A and the central electrode 11B.
  • the running discharge part D2 between the right end electrode 11A and the second stage part 22 and the running discharge part D2 between the center electrode 1 IB and the second stage part 22 move to the right.
  • the leftmost electrode 11C is located at the predetermined position across the second and third movement ranges R2 and R3.
  • the switch unit 31C is turned on and voltage supply from the power supply circuit 30 to the left end electrode 11C is started.
  • the period in which the electrodes 11A, 11B, 11C arranged side by side are located on the third movement range R3 side from the predetermined position across the second and third movement ranges R2, R3, respectively. Stops supplying voltage to the electrode and starts supplying voltage to the electrode every time it enters the predetermined position to generate a running discharge D2. 1Moving range During the period that is located on the R1 side, the voltage supply is continued and the discharge is maintained.
  • the right end electrode 11 A comes to be positioned above the peripheral edge Wb of the substrate W before and after the left end electrode 11C reaches the predetermined position.
  • the right end A running discharge D2b is generated between the electrode 11A and the peripheral edge Wb of the substrate.
  • the front surface of the substrate peripheral portion Wb can be subjected to plasma treatment.
  • the substrate peripheral portion Wb functions as a solid dielectric layer on the surface of the second metal 24 together with the inner dielectric portion 26 and contributes to stable discharge.
  • the combined dielectric constant of the substrate peripheral edge Wb and the inner dielectric part 26 is slightly different from the dielectric constant of the outer dielectric part 27 alone and the dielectric constant of the substrate main part Wa alone, and the state of discharge D2b is on the outer dielectric part 27. This is slightly different from the run-up discharge D2 and the normal plasma discharge D1 on the substrate main part Wa, but the peripheral edge Wb of the substrate is a part unrelated to the quality of the product, so there is no problem.
  • the right end electrode 11A further extends from the second movement range R2 to the first movement range R1.
  • an electric field is also applied between the right end electrode 11A and the end of the first stage portion 21.
  • a normal atmospheric pressure plasma discharge D1 is formed between the right end electrode 11A and the end portion Wae of the main portion Wa of the substrate W (the boundary portion with the peripheral portion Wb).
  • the running discharge D2 or D2b between the electrode 11A and the second stage portion 22 continues. Therefore, it is possible to prevent the electric field from concentrating only on the narrow regular discharge part D1. As a result, it is possible not only to prevent the power supply circuit 30 from being damaged, but also to stabilize the discharge state on the end Wae of the main part of the substrate. Further, the temperature of the electrode 11A is increased by a running discharge D2 on the second stage portion 22 prior to the normal plasma discharge D1, and a ceramic solid dielectric layer (not shown) on the surface of the electrode 11A is dried. The discharge is ready. Therefore, the discharge state on the end portion Wae of the substrate main portion can be further stabilized.
  • the run-off discharge part D2 (including D2b) and the normal discharge part D1 by the electrode 11A are continuous, the plasma can travel between the two discharge parts Dl and D2 to obtain a homogeneous plasma as a whole. Can do. Therefore, the end portion Wae of the main portion of the substrate can be processed in the same manner as the central portion of the substrate W, and the processing can be made uniform.
  • the entire right end electrode 11A is moved to the first position.
  • the central electrode 11B extends from the second moving range R2 to the first moving range R1, and a plasma discharge D2b is formed between the central electrode 11B and the substrate peripheral edge Wb.
  • the plasma discharge D1 is also formed between the central electrode 11B and the end portion Wae of the main part of the substrate.
  • the entire center electrode 11B enters the first movement range R1, and the left end electrode 11C extends from the second movement range R2 to the first movement range R1, and the left end electrode 11C and the substrate peripheral portion Wb.
  • a plasma discharge D2b is formed between the left end electrode 11C and the plasma discharge D1 between the left end electrode 11C and the end portion Wae of the main part of the substrate.
  • the entire processing unit 10 is positioned in the first movement range R1, and an electric field is applied between each electrode 11A, 11B, 11C and the first stage portion 21.
  • a regular plasma discharge D1 is generated between the electrodes 11A, 11B, and 11C and the substrate main portion Wa.
  • the plasma surface treatment can be performed on the lower portions of the electrodes 11A, 11B, and 11C in the substrate main portion Wa.
  • the substrate W functions as a solid dielectric layer of the first stage portion 21. Therefore, it is possible to keep the manufacturing cost low without having to provide a solid dielectric layer on the first metal surface 21a. Therefore, the stage 20 can be easily increased in size corresponding to the large area of the substrate W.
  • the processing unit 10 further moves in the direction of the arrow and moves toward the opposite end of the stage 20 (right side in FIG. 10). Although not shown in the figure, at each opposite end, each time the electrode 11 reaches a predetermined position straddling the second movement range R2 and the third movement range R3, the corresponding switch portion 31 is turned off to the electrode 11. Stop the voltage supply.
  • the voltage off timing at the opposite end may be set when each electrode 11 reaches a predetermined position across the first movement range R1 and the second movement range R2.
  • the entire substrate W can be plasma-processed.
  • the processing unit 10 may be reciprocated left and right.
  • the processing unit 10 is retracted outside the stage 20 and the substrate W is picked up.
  • the left and right width dimensions of each of the electrodes 11, 11, 11 are the second stage part. It is smaller than the left and right width of 22 and thus smaller than the left and right width of the second movement range R2. Therefore, there is a section where the entire width direction of the electrode 11 falls within the second movement range R2. Therefore, the “predetermined position” that is the voltage supply timing is shifted to the first movement range R1 side from the position where the electrode 11 straddles the second movement range R2 and the third movement range R3, so that the entire width of the electrode 11 is the first. 2 It may be set to a position within the movement range R2. That is, when the entire width direction of each electrode 11 is within the second movement range R2, voltage supply to the electrode 11 and formation of the running discharge D2 are started.
  • the direction of the electric field from the electrode 11 at the start of voltage supply can be more reliably directed to the second metal 24 of the second stage portion 22, and an abnormal discharge can be more reliably generated from the electrode 11.
  • the electric field concentration at the outer end of the second metal can be avoided more reliably.
  • the processing unit 10 is provided with only one electrode 11.
  • the width in the left-right direction of the electrode 11 is larger than the width in the left-right direction of each electrode 11A, 11B, 11C of the fifth embodiment, and further larger than the width in the left-right direction of the second stage portion 22. Therefore, when the front end (right end) of the traveling direction of the electrode 11 comes close to the first movement range R1, the rear end (left end) of the traveling direction is still in the third movement range R3.
  • the electrode 11 is in a state straddling the second movement range R2 and the third movement range R3 (see FIG. 18).
  • the power supply circuit 30 is provided with only one switch portion 31, and the electrode 11 is connected to the power supply circuit 30 through the switch portion 31.
  • the switch unit 31 is turned off and the voltage supply to the electrode 11 is stopped.
  • electrode 11 moves in the direction of the arrow (rightward) in FIG. 17 and reaches a predetermined position across the second and third movement ranges R2 and R3, switch 31 is turned on and voltage supply to electrode 31 is started.
  • a running discharge D2 is generated between the electrode 31 and the second stage portion 22.
  • the predetermined position is set to a position where, for example, about 30 to 70% of the wide electrode 11 is in the second movement range R2, and the remaining portion is in the third movement range R3, and the wide electrode 11 reaches this predetermined position.
  • voltage supply is started.
  • the predetermined position is set to a position where approximately 50% of the wide electrode 11 is in the second movement range R2, and the remaining portion is in the third movement range R3. Electrode 11 is in this predetermined position When the voltage reaches, voltage supply is started. As a result, abnormal discharge from the wide electrode 11 and electric field concentration on the outer end of the second metal 24 can be reliably prevented.
  • the predetermined position is set to a position where the wide electrode 11 is in the immediate vicinity of the first movement range R1, and when the wide electrode 11 reaches the predetermined position, a voltage supply is provided. Start paying. As a result, the occurrence of abnormal discharge from the wide electrode 11 and the concentration of the electric field on the outer end of the second metal 24 can be more reliably prevented, and safety can be further enhanced.
  • the object to be processed W should have a dielectric as a main component.
  • the surface to be processed (surface) should be mainly composed of a dielectric. There is no need to speak. Some metal may be disposed on the surface. There is no problem if a metal is embedded in the workpiece W and this metal is not exposed to the outside!
  • Specific examples of such a workpiece W include a liquid crystal panel, a liquid crystal module or a plasma display constituting a liquid crystal display, a panel or a module constituting an organic EL display and a field emission display.
  • the first stage portion 21 may have an exposed metal surface.
  • the entire metal surface need not be exposed.
  • a part of the metal surface may be a solid dielectric layer or a solid dielectric layer. May be covered with a non-functional insulator (for example, an insulating thin film used in the field of tape, paint, or semiconductor).
  • the solid dielectric layer refers to a solid dielectric that is coated on the metal body of the electrode and prevents abnormal discharge such as arc discharge and achieves a good glow discharge.
  • the solid dielectric layer 25 as a single unit in the first or second embodiment and the separate structure of the first stage portion 21 and the second metal 24 in the third embodiment may be combined, or the inner side of the third embodiment As in the second embodiment, the dielectric part 26 is made thinner as it goes toward the inner end (opposite to the outer dielectric part 27 side), or the thickness and dielectric constant of the outer dielectric part 27 in the third embodiment are reduced. It is also possible to combine the different configurations of the first to sixth embodiments, such as making the size larger than the substrate W as in the first embodiment.
  • the number of electrodes is not limited to one or three, and may be two or four or more. Two or more electrodes are preferably arranged along the direction of relative movement with respect to the stage. If one of the two or more electrodes is designated as the “first electrode”, the other electrode arranged on the rear side in the moving direction (the third moving range side) becomes the “second electrode”. .
  • the power supply circuit 30 may be provided separately for each of the plurality of electrodes.
  • the power supply circuit power corresponding to the first electrode constitutes a “first power supply circuit”, and the power supply circuit corresponding to the second electrode constitutes a “second power supply circuit”.
  • the first power supply circuit and the second power supply circuit may be configured by a common power supply circuit as shown in FIG.
  • the present invention can be applied to, for example, manufacturing a semiconductor substrate or a liquid crystal substrate by cleaning, modifying (hydrophilization, water repellency, etc.), film formation, etching or ashing of the substrate surface using a plasma. It is.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)

Abstract

Le problème à résoudre dans le cadre de cette invention est d’obtenir un dispositif de traitement au plasma à pression atmosphérique permettant de prendre en charge une vaste zone d’un objet à traiter et d’assurer un traitement privilégié à un point de départ de décharge normale. La solution proposée consiste en un dispositif de traitement au plasma à pression atmosphérique dans lequel une première surface métallique (21a) d’une première unité fonctionnelle (21) d’une phase (20) est exposée et un objet diélectrique (W) à traiter est placé. Une seconde unité fonctionnelle (22) est disposée à la périphérie de la première (21). Une couche diélectrique solide (25) est disposée sur une seconde surface métallique (24) de la seconde unité (22), et la partie périphérique de l’objet (W) à traiter est placée dans une zone diélectrique interne (26) de la couche diélectrique solide (25). Une électrode (11) forme une décharge de point fixe (D2) dans une seconde plage de mouvement (R2) sur la seconde unité (22) et passe à une première plage de mouvement (R1) sur la première unité (21) pour former une décharge de plasma normale (D1).
PCT/JP2006/318381 2005-09-22 2006-09-15 Dispositif de traitement au plasma WO2007034747A1 (fr)

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CN101258784B (zh) 2011-03-30
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KR20080048546A (ko) 2008-06-02
US20090229756A1 (en) 2009-09-17
TW200715395A (en) 2007-04-16

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