WO2007009364A1 - Solution detergente et son utilisation - Google Patents

Solution detergente et son utilisation Download PDF

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Publication number
WO2007009364A1
WO2007009364A1 PCT/CN2006/001701 CN2006001701W WO2007009364A1 WO 2007009364 A1 WO2007009364 A1 WO 2007009364A1 CN 2006001701 W CN2006001701 W CN 2006001701W WO 2007009364 A1 WO2007009364 A1 WO 2007009364A1
Authority
WO
WIPO (PCT)
Prior art keywords
compound
cleaning solution
cleaning
metal
solution according
Prior art date
Application number
PCT/CN2006/001701
Other languages
English (en)
Chinese (zh)
Inventor
Chris Chang Yu
Danny Zhenglong Shiao
Andy Chunxiao Yang
Judy Jianfen Jing
Sunny Chun Xu
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Publication of WO2007009364A1 publication Critical patent/WO2007009364A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/37—Polymers
    • C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/16—Metals

Definitions

  • the present invention relates to a cleaning fluid and its use, and more particularly to a cleaning fluid for cleaning integrated circuit wafers. Background technique
  • the typical cleaning solutions in the prior art are mainly deionized water, hydrogen peroxide solution and dilute ammonia water, and these cleaning liquids are mainly used for cleaning the residual liquid in the pre-process.
  • the pre-ordering process is as follows: 1) Chemical mechanical polishing process, a small amount of polishing liquid remains on the metal surface after chemical mechanical polishing; 2) etching to remove the strong photoresist process, and the process will also leave a strong photoresist 3) deposition process and other processes.
  • the residual liquid is cleaned, but the corrosion of the metal surface still exists. Corrosion of the metal surface affects the flatness of the metal surface and also keeps the defect level high, thereby reducing product yield and yield.
  • the cleaning liquid in the patent US6147002 relates to a cleaning solution for an acidic aqueous solution, which further comprises 0.5 to 5% by weight of a fluorine-containing substance, which is suitable for cleaning integrated circuit components of a copper metal semiconductor wafer.
  • the cleaning liquid in the above patents is either toxic or unfriendly to the environment; or the cleaning efficiency is not high enough; or the cleaning range is narrow.
  • the cleaning liquid of US6443814 can only clean the wafer containing the copper metal layer.
  • a cleaning fluid comprising at least one carrier further comprising a metal corrosion inhibitor.
  • the metal corrosion inhibitor is preferably a polycarboxylic acid and/or a salt thereof.
  • the polycarboxylic acid and/or its salt is preferably a polyacrylic compound and/or a salt thereof.
  • the polycarboxylic acid is preferably a polyacrylic compound, or a copolymerized compound of an acrylic compound and styrene, or a copolymerized compound of an acrylic compound and maleic anhydride, or an acrylic compound and acrylic acid.
  • Copolymer compounds of esters, their molecular weights are
  • the polycarboxylic acid and/or its salt are preferably a compound of formula I:
  • R 2 is independently a hydrogen atom or an alkyl group having a carbon number of less than 3, and is K, Na or ⁇ 4 .
  • the polyacrylic compound and/or its salt is more preferably polyacrylic acid, and its molecular weight is preferably from 10,000 to 30,000.
  • the cleaning solution of the present invention may further comprise a pH adjusting agent.
  • the cleaning liquid of the present invention preferably further comprises a nitrogen-containing heterocyclic compound to further improve the cleaning effect.
  • the nitrogen-containing heterocyclic compound is preferably benzotriazole, pyrazole and/or imidazole, more preferably benzotriazole.
  • the carrier is preferably an alcohol and/or water, and the alcohol may be glycerol.
  • the mass concentration of the metal anti-corrosion inhibitor is preferably 0.0001 ⁇
  • Another object of the present invention is to provide the use of the cleaning liquid in a metal substrate, which is aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver, gold, preferably aluminum.
  • the positive progress of the present invention is as follows: Compared with a typical cleaning liquid, the cleaning liquid provided by the invention greatly reduces the degree of corrosion of the metal material, thereby having the following advantages: (1) causing a significant decrease in the defect rate of the metal surface; ) greatly improve the flatness of the metal surface; (3) improve product quality, increase profitability, and (4) improve cleaning efficiency.
  • Figure 1A is a scanning electron microscope (SEM) image of the metal surface after cleaning with a deionized water cleaning solution
  • Figure 1B is an SEM image of the metal surface after cleaning using the cleaning solution of the present invention.
  • Figure 2A is an atomic force microscope (AFM) diagram of the surface roughness of a metal after washing with deionized water;
  • 2B is an atomic force microscope diagram of the surface roughness of the metal after cleaning using the cleaning solution of the present invention
  • Figure 3A is an optical microscope dark field diagram of the surface of the metal aluminum after brush cleaning with deionized water.
  • the black matrix in the figure is metal aluminum, and the white dots are corroded;
  • Fig. 3B is an optical microscope dark field diagram of the surface of the metal aluminum after brush cleaning using the cleaning liquid of the present invention.
  • a cleaning solution (pH 5.3) containing 800 ppm of polyacrylic acid (molecular weight: 30,000) and water was used to clean the surface of the aluminum metal polished with a chemical mechanical polishing liquid.
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure l psi, polishing plate rotation speed 100 ipm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then Deionized water and polyvinyl alcohol (PVA) roller brush and the cleaning liquid and PVA roller brush on the aluminum metal surface of the wafer Brush for 1 min, roller brush speed is 100 rpm; (3) remove and wash with deionized water and PVA roller for 1 min.
  • the cleaning results are shown in Figure 1B.
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure 1 psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then The surface of the aluminum metal on the wafer was brushed with deionized water and polyvinyl alcohol (PVA) roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) deionized again. Water and PVA roller brush for 1 min. The cleaning results are shown in Figure 2B.
  • PVA polyvinyl alcohol
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure 1 psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min; (2) then deionized water separately And the PVA roller brush and the cleaning liquid and the PVA roller brush to scrub the aluminum metal surface on the wafer 1 Min, roller brush speed is lOO rpm; (3) statically placed in ionized water for 30 min after brushing; (4) and then removed with deionized water and PVA roller brush for 1 min.
  • the cleaning solution containing the metal anti-corrosion inhibitor of the invention can effectively prevent the corrosion of the metal aluminum (see Fig. 3A), and the metal aluminum washed with deionized water has a large amount of Corrosion (see Figure 3B).
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure l psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min;
  • the surface of the aluminum metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min respectively, and the rolling speed was 100 rpm; (3) the deionized water and PVA roller brush were taken out again. Brush for 1 min.
  • a cleaning solution (pH 3.0) containing 25 ppm of polyacrylic acid (molecular weight: 30,000), 500 ppm of BTA and water was used to clean the surface of the aluminum metal polished with a chemical mechanical polishing solution.
  • the process of polishing aluminum metal by chemical mechanical polishing liquid is: lower pressure l psi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm.
  • the surface of the aluminum metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) and then washed with deionized water and PVA roller brush for 1 min.
  • the process of polishing copper metal by chemical mechanical polishing liquid is: lower pressure lpsi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then separately The surface of the copper metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) and then washed with deionized water and PVA roller brush 1
  • the process of polishing copper metal by chemical mechanical polishing liquid is: lower pressure lpsi, polishing plate rotation speed 100 rpm, polishing head rotation speed 105 rpm, cleaning liquid flow rate 200 ml/min, cleaning time 1 min; (2) then separately The surface of the copper metal on the wafer was brushed with deionized water and PVA roller brush and the cleaning liquid and PVA roller brush for 1 min, and the rolling speed was 100 rpm; (3) and then washed with deionized water and PVA roller brush Lmin.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

La présente invention concerne une solution détergente comportant au moins un agent anti-corrosion. L'invention concerne également l'utilisation de cette solution détergente pour le nettoyage d'un substrat métallique. Par rapport aux solutions détergentes traditionnelles, la solution détergente selon l'invention permet de réduire de manière significative la corrosion du matériau métallique, et présente les avantages suivants : (1) elle permet de réduire de manière remarquable les défauts à la surface du métal ; (2) elle permet d'améliorer de manière évidente la planéité de la surface du métal ; (3) elle permet d'améliorer la qualité des articles et d'augmenter le taux de rendement de production ; (4) elle permet d'améliorer l'efficacité du nettoyage.
PCT/CN2006/001701 2005-07-21 2006-07-17 Solution detergente et son utilisation WO2007009364A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510027989.6A CN1900363B (zh) 2005-07-21 2005-07-21 清洗液及其用途
CN200510027989.6 2005-07-21

Publications (1)

Publication Number Publication Date
WO2007009364A1 true WO2007009364A1 (fr) 2007-01-25

Family

ID=37656342

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2006/001701 WO2007009364A1 (fr) 2005-07-21 2006-07-17 Solution detergente et son utilisation

Country Status (2)

Country Link
CN (1) CN1900363B (fr)
WO (1) WO2007009364A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101290482A (zh) * 2007-04-19 2008-10-22 安集微电子（上海）有限公司 一种清洗等离子刻蚀残留物的清洗液
CN101412950A (zh) * 2007-10-19 2009-04-22 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN101424887A (zh) * 2007-11-02 2009-05-06 安集微电子（上海）有限公司 一种半导体晶圆金属基材腐蚀防护液及其使用方法
CN101842747B (zh) * 2007-11-02 2012-07-25 安集微电子（上海）有限公司 一种半导体晶圆金属基材腐蚀防护液及其使用方法
CN101614971B (zh) * 2008-06-27 2013-06-12 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN102296294B (zh) * 2010-06-25 2016-01-20 安集微电子（上海）有限公司 一种金属腐蚀保护液及其应用
CN103882444A (zh) * 2012-12-19 2014-06-25 安集微电子（上海）有限公司 一种清洗液及其应用
CN104894575A (zh) * 2015-05-27 2015-09-09 南京科技职业学院 化工设备用脱脂剂

Citations (4)

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CN1240821A (zh) * 1998-07-02 2000-01-12 株式会社日本触媒 洗涤剂助剂、它的制备方法和聚(甲基)丙烯酸(或盐)聚合物及其用途
JP2001185516A (ja) * 1999-12-24 2001-07-06 Kao Corp 研磨助剤
CN1405287A (zh) * 2001-09-07 2003-03-26 第一工业制药株式会社 非易燃性水系切削液组合物以及非易燃性水系切削液
CN1603395A (zh) * 2003-09-29 2005-04-06 中芯国际集成电路制造(上海)有限公司 半导体晶片的清洗液及清洗方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401807A (en) * 1992-10-08 1995-03-28 Rohm And Haas Company Process of increasing the molecular weight of water soluble acrylate polymers by chain combination
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液
US6350560B1 (en) * 2000-08-07 2002-02-26 Shipley Company, L.L.C. Rinse composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1240821A (zh) * 1998-07-02 2000-01-12 株式会社日本触媒 洗涤剂助剂、它的制备方法和聚(甲基)丙烯酸(或盐)聚合物及其用途
JP2001185516A (ja) * 1999-12-24 2001-07-06 Kao Corp 研磨助剤
CN1405287A (zh) * 2001-09-07 2003-03-26 第一工业制药株式会社 非易燃性水系切削液组合物以及非易燃性水系切削液
CN1603395A (zh) * 2003-09-29 2005-04-06 中芯国际集成电路制造(上海)有限公司 半导体晶片的清洗液及清洗方法

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Publication number Publication date
CN1900363B (zh) 2016-01-13
CN1900363A (zh) 2007-01-24

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