WO2007009365A1 - Liquide de polissage chimique mecanique - Google Patents

Liquide de polissage chimique mecanique Download PDF

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Publication number
WO2007009365A1
WO2007009365A1 PCT/CN2006/001702 CN2006001702W WO2007009365A1 WO 2007009365 A1 WO2007009365 A1 WO 2007009365A1 CN 2006001702 W CN2006001702 W CN 2006001702W WO 2007009365 A1 WO2007009365 A1 WO 2007009365A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
chemical mechanical
mechanical polishing
polishing liquid
liquid according
Prior art date
Application number
PCT/CN2006/001702
Other languages
English (en)
Chinese (zh)
Inventor
Andy Chunxiao Yang
Chris Chang Yu
Danny Zhenglong Shiao
Judy Jianfen Jing
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Publication of WO2007009365A1 publication Critical patent/WO2007009365A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing liquid. Background technique
  • the polished surface of the substrate is directly in contact with the rotating polishing pad while applying pressure on the back surface of the substrate.
  • the polishing pad rotates with the stage while maintaining a downward force on the back side of the substrate, and a liquid composed of an abrasive and a chemically active solution (commonly referred to as a chemical mechanical polishing liquid) is applied to the polishing pad.
  • the polishing liquid chemically reacts with the film being polished and mechanically starts the polishing process.
  • Chemical mechanical polishing fluids are an important factor in CMP, and the appropriate chemical mechanical polishing fluid can be selected to change the polishing performance according to the needs of the process.
  • the chemical mechanical polishing liquid of the present invention comprises at least one abrasive particle, a chemical additive and a carrier; wherein the chemical additive 'is a polycarboxylic acid compound and / Or its salt.
  • the chemical mechanical polishing liquid of the present invention can polish the following metal thin film materials: aluminum, copper, ruthenium, lanthanum nitride, titanium, titanium oxide, silver, gold, ruthenium, etc., mainly used for polishing aluminum thin films.
  • the present invention uses specific chemical additives to significantly reduce the level of metal polishing defects and increase the level of metal surface planarization.
  • the typical metal material chemical mechanical polishing liquid has a high metal polishing rate, which is not conducive to the integrity of the metal surface, and the chemical mechanical polishing liquid of the invention can significantly reduce the polishing rate of the metal and prevent metal corrosion, thereby reducing The level of metal polishing defects and the level of flattening of the metal surface to improve the quality of the metal surface, thereby significantly improving the yield of the wafer product.
  • the chemical mechanical polishing liquid of the present invention can polish not only the above metal thin film material but also a patterned wafer.
  • a patterned wafer different materials on the wafer are simultaneously polished, such as a wafer of patterned aluminum, copper or tantalum and silicon dioxide.
  • the chemical mechanical polishing liquid of the present invention may contain no oxidizing agent and achieve the same level of polishing as a typical chemical mechanical polishing liquid containing an oxidizing agent.
  • the oxidant is an indispensable component, and the oxidation* is more unstable than the other components in the chemical mechanical polishing solution, so the use of the oxidizing agent for the chemical mechanical polishing liquid The performance and longevity will have a certain impact.
  • the chemical mechanical polishing liquid of the present invention may also contain an oxidizing agent to further improve the polishing performance of the metal surface.
  • the polycarboxylic acid compound is a copolymer of a polyacrylic compound and/or an acrylic compound
  • the salt is an ammonium salt, a potassium salt or a sodium salt, and has a molecular weight of 2,000 to 3,000,000.
  • the polyacrylic compound is preferably a compound of the following formula I, and the copolymer of the acrylic compound is preferably copolymerized of styrene, maleic anhydride or acrylate with an acrylic compound.
  • the polyacrylic compound is preferably polyacrylic acid, that is, R 2 in the above formula I is independently a hydrogen atom; the copolymer of the acrylic compound is preferably an acrylate acrylic copolymer; their molecular weight is preferably 2,000. Between 1 and 1,000,000, the molecular weight of the polyacrylic acid is more preferably 30,000.
  • the abrasive particles can be any abrasive particles of the prior art, preferably silica, alumina, ceria, titania and/or polymeric abrasive particles.
  • the carrier is preferably an inorganic carrier such as water; it may also be a mixture of an inorganic carrier and an organic carrier, such as a mixture of water and glycerol.
  • the concentration of the abrasive particles is 1 to 20% by weight
  • the concentration of the chemical additive is 0.001 to 10% by weight
  • the carrier is the balance.
  • the chemical mechanical polishing liquid of the present invention also preferably includes an inhibitor.
  • the concentration of the inhibitor is preferably 0.001 to 5% by weight, and the inhibitor is benzotriazole, imidazole and/or pyrazole, preferably benzotriazole.
  • the chemical mechanical polishing liquid containing an inhibitor of the present invention may further include a monocarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and/or a salt thereof.
  • the concentration of the monocarboxylic acid, dicarboxylic acid, polycarboxylic acid and/or its salt is preferably 0.1 to 10% by weight, more preferably 0.3 to 1.0% by weight.
  • the monocarboxylic acid is preferably acetic acid, and the dicarboxylic acid is preferably oxalic acid, succinic acid and/or tartaric acid.
  • the polycarboxylic acid is preferably citric acid, cyclohexanediaminetetraacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid and/or tannic acid, and the salt is preferably an ammonium salt or a potassium salt. And / or sodium salt.
  • the chemical mechanical polishing liquid containing no inhibitor of the present invention may also include a monocarboxylic acid, two A metacarboxylic acid, a polycarboxylic acid, and/or a salt thereof.
  • the concentration of the monocarboxylic acid, dicarboxylic acid, polycarboxylic acid and/or its salt is preferably 0.1 to 10% by weight, more preferably 0.3 to 1.0% by weight.
  • the monocarboxylic acid is preferably acetic acid, and the dicarboxylic acid is preferably oxalic acid, succinic acid and/or tartaric acid, and the polycarboxylic acid is preferably citric acid or cyclohexanediamine. Tetraacetic acid, diethylenetrispentaacetic acid, ethylenediaminetetraacetic acid and/or tannic acid, the salts being ammonium salts, potassium salts and/or sodium salts.
  • the chemical mechanical polishing liquid of the present invention preferably further comprises an oxidizing agent.
  • the oxidizing agent can be any oxidizing agent of the prior art, preferably hydrogen peroxide, ferric nitrate, organic peroxides and/or inorganic peroxides.
  • the chemical mechanical polishing liquid of the present invention preferably further comprises a surfactant and/or a complexing agent.
  • the surfactant is preferably a fatty alcohol polyoxyethylene ether, polyvinyl alcohol, polyoxyethylene mercaptoamine and/or alkyl alcohol amide.
  • the complexing agent is preferably a compound containing a phosphate group, a hydroxylamine group, an amine salt, and or an amine group.
  • the chemical mechanical polishing liquid of the present invention may further comprise one or more of a dispersant, a catalyst and a pH adjuster.
  • Another object of the present invention is to provide the use of the chemical mechanical polishing liquid of the present invention in polishing a metal, which is aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or gold, preferably polished aluminum. .
  • the positive progress of the present invention is that the chemical mechanical polishing liquid of the present invention can significantly reduce the defect rate, increase the level of planarization of the metal surface, significantly reduce the polishing rate of the metal, optimize the polishing rate of the dielectric, and expand the process parameter window.
  • Figure 1A is a microscopic dark field diagram of the surface corrosion of a wafer after polishing without PAA chemical mechanical polishing liquid.
  • the black matrix in the figure is metal aluminum and white is corrosion;
  • 1B is a microscopic dark field diagram of the surface corrosion of the wafer after polishing the PAA-containing chemical mechanical polishing liquid of the present invention
  • Figure 2A shows the microscope for residual particles on the surface of the wafer after polishing without PAA chemical mechanical polishing solution. Dark field diagram, the black matrix in the figure is metal aluminum, and the white dots are residual particles;
  • 2B is a microscopic dark field diagram of residual particles on the surface of the wafer after polishing the PAA-containing chemical mechanical polishing liquid of the present invention
  • Figure 3A is a microscopic bright field diagram of pitting on the surface of the wafer after polishing without PAA chemical mechanical polishing liquid, wherein the black dots in the figure are pitting;
  • 3B is a microscopic bright field diagram of pitting corrosion on a wafer surface after polishing of a chemical mechanical polishing liquid containing PAA according to the present invention
  • Figure 4A is an atomic force microscope image of the surface roughness of the wafer before polishing using the PAA-containing chemical mechanical polishing liquid of the present invention
  • Fig. 4B is an atomic force micrograph of the surface roughness of the wafer after polishing using the PAA-containing chemical mechanical polishing liquid of the present invention.
  • Chemical mechanical polishing liquid 1 20.0 wt ° / i silica particles, 10.0 wt% PAA (molecular weight 2000) and the balance is water, pH 7.7.
  • Chemical mechanical polishing solution 2 20.0 wt% silica particles, 10.0 wt% acrylate acrylic acid copolymer (molecular weight 2,000) and the balance water, pH 7.7.
  • Chemical mechanical polishing liquid 3 20.0 wt% of silica particles, 10.0 wt% of PAA (molecular weight: 2,000), 10.0 wt% of succinic acid, and the balance being water, pH 7.7.
  • Chemical mechanical polishing liquid 4 20.0 wt% of silica particles, 10.0 wt% of PAA (molecular weight: 2,000), 5.0 wt% of BTA, and the balance being water, pH 7.7.
  • Chemical mechanical polishing solution 5 5.0wt% silica particles, 0.1wt% PAA (molecular weight is 30,000), 0.1 wt% BTA, 0.5 wt% succinic acid and the balance water, pH 4.25.
  • Example 6 Chemical mechanical polishing solution 5: 5.0wt% silica particles, 0.1wt% PAA (molecular weight is 30,000), 0.1 wt% BTA, 0.5 wt% succinic acid and the balance water, pH 4.25.
  • Chemical mechanical polishing liquid 6 3 wt% of silica particles, 0.006 wt% of polyacrylic acid (abbreviated as PAA) ammonium salt (molecular weight: 30,000) and the balance being water, pH 3.
  • PAA polyacrylic acid
  • Chemical mechanical polishing liquid 7 3 wt% silica particles, 0.006 wt% PAA ammonium salt (molecular weight 30,000), 0.1 wt% BTA (benzotriazole) and the balance water, pH 3.
  • Chemical mechanical polishing liquid 8 3wt% silica particles, 0.004wt% PAA ammonium salt (molecular weight 30,000), 0.1wt% BTA, 0.5wt%: ethylenetriaminepentaacetic acid and the balance is water, pH is 3.
  • Chemical mechanical polishing liquid 9 6 wt / / l silica particles, 0.12 wt% PAA ammonium salt (molecular weight 30,000), 0.05 wt% BTA and the balance is water, pH 3.
  • Chemical mechanical polishing liquid 10 6 wt% silica particles, 0.200 wt% PAA ammonium salt (molecular weight 30,000), 0.001 wt% BTA and the balance water, pH 3.
  • Chemical mechanical polishing liquid 13 lwt% silica particles, 0.001 wt% PAA (molecular weight 3,000,000), 0.1 wt% succinic acid and the balance water, pH 3.
  • Chemical mechanical polishing solution 14 lwt% silica particles, 0.001 wt% PAA (molecular weight is 3,000,000), 0.1 wt% BTA and the balance is water, pH 3.
  • Chemical mechanical polishing liquid 15 5.0wt% silica particles, 0.1wt% PAA (molecular weight 30,000), 0.1wt.% BTA, 0.5wt% T diacid, 0.5wt% 3 ⁇ 40 2 and the balance is water, pH is 4.25.
  • the effects of the above chemical mechanical polishing liquids 1, 1, 5 ⁇ 9, and 15 on the polishing rate were measured, and the aluminum film was polished.
  • the process parameters during polishing were as follows: a down pressure of 2 psi, a polishing disk (300 mm diameter), a rotation speed of 100 rpm, and a polishing head. The rotation speed was 105 rpm, and the polishing slurry flow rate was 200 ml/min.
  • the experimental results are shown in Table 1.
  • the experimental results show that the corrosion of the surface of the aluminum wafer can be remarkably removed by using the chemical mechanical polishing liquid of the present invention.
  • the surface of the aluminum wafer polished using the PAA-containing chemical mechanical polishing liquid of the present invention is not corroded (see FIG. 1B), and the surface of the aluminum wafer using the comparative chemical mechanical polishing liquid 1' containing no PAA has a large amount of corrosion (see FIG. 1A). ).
  • the results of the chemical mechanical polishing liquids 1 to 5, 7 to 14 are the same as those of the chemical mechanical polishing liquid 6, and will not be repeated here.
  • the experimental results show that the residual particles on the edge of the surface of the aluminum wafer can be remarkably removed by using the chemical mechanical polishing liquid of the present invention.
  • the surface of the surface of the aluminum wafer after polishing using the PAA-containing chemical mechanical polishing liquid of the present invention has no residual particles (see FIG. 2B), and the surface of the surface of the aluminum wafer using the comparative chemical mechanical polishing liquid 1' containing no PAA has a large amount of residual particles. (See Figure 2A).
  • the results of the chemical mechanical polishing liquids 1 to 5, 7, 9 to 11, 15 are the same as those of the chemical mechanical polishing liquid 6, and will not be repeated here.
  • the experimental results show that the chemical mechanical polishing liquid of the present invention can remove pitting on the surface of the wafer.
  • Make The surface of the aluminum wafer polished with the PAA-containing chemical mechanical polishing liquid of the present invention is free of pitting (see Fig. 3B), and the surface of the aluminum wafer using the comparative chemical mechanical polishing liquid 1' containing no PAA has a large amount of pitting (see Figure 3A).
  • the results of the chemical mechanical polishing liquids 1 to 5, 7 to 14 are the same as those of the chemical mechanical polishing liquid 6, and will not be repeated here.
  • the influence of the above chemical mechanical polishing liquid 5 to 11 on the roughness of the aluminum surface was examined. They were used to polish the surface of the aluminum film on the wafer.
  • the polishing process parameters were: 2 psi under pressure, 100 rpm at a polishing disk (300 mm diameter), 105 rpm at a polishing head, and 200 ml/min at a polishing slurry flow rate.
  • the experimental results are shown in Figures 4A and 4B.
  • the experimental results show that the chemical mechanical polishing liquid of the present invention can significantly reduce the roughness of the wafer surface.
  • the Rms (roughness) of the surface of the aluminum wafer before polishing using the chemical mechanical polishing liquid of the present invention is 18.7 A, and the Rms (roughness) of the surface of the aluminum wafer polished by using the PAA-containing chemical mechanical polishing liquid 6 of the present invention is lowered.
  • As of 1.86A it is reduced by more than 10 times, and the effect is very remarkable.
  • the results of the chemical mechanical polishing liquid 5, 7 to 11 are the same as those of the chemical mechanical polishing liquid 6, and will not be repeated here.
  • the above chemical mechanical polishing liquids 5 to 9 were respectively used for polishing a wafer patterned by aluminum and silicon dioxide.
  • the process parameters for polishing were: 2 psi for the downforce, 100 rpm for the polishing disc (300 mm diameter), 105 rpm for the polishing head, and 200 ml/min for the polishing paddle.
  • the polishing rates of aluminum and silicon dioxide are shown in Table 2.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

L'invention concerne un liquide de polissage chimique mécanique comprenant au moins une particule abrasive, un additif chimique ainsi qu'une matière porteuse, l'additif chimique étant de l'acide carboxylique ou le sel de celui-ci. Ledit liquide de polissage est utilisé afin de réduire considérablement le taux de défaut, pour augmenter le niveau de planéité de la surface métallique, pour réduire le taux de polissage du métal, pour optimiser le taux de polissage de diélectrique et afin d'accroître la gamme des paramètres de traitement.
PCT/CN2006/001702 2005-07-21 2006-07-17 Liquide de polissage chimique mecanique WO2007009365A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510027990.9 2005-07-21
CN2005100279909A CN1900146B (zh) 2005-07-21 2005-07-21 化学机械抛光液

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WO2007009365A1 true WO2007009365A1 (fr) 2007-01-25

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CN101373340B (zh) * 2007-08-23 2013-07-10 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101487993A (zh) * 2008-01-18 2009-07-22 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂
CN101550319A (zh) * 2008-04-03 2009-10-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN101685272A (zh) * 2008-09-26 2010-03-31 安集微电子（上海）有限公司 一种光刻胶清洗剂
CN101685274B (zh) * 2008-09-26 2012-08-22 安集微电子（上海）有限公司 一种用于厚膜光刻胶的清洗剂
CN101738880A (zh) * 2008-11-10 2010-06-16 安集微电子（上海）有限公司 一种厚膜光刻胶清洗剂
CN101750911A (zh) * 2008-11-28 2010-06-23 安集微电子（上海）有限公司 一种光刻胶清洗剂组合物
CN101747842B (zh) * 2008-12-19 2014-12-31 安集微电子（上海）有限公司 一种化学机械抛光液
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
CN102073226B (zh) * 2009-11-20 2014-03-26 安集微电子（上海）有限公司 一种厚膜光刻胶清洗液及其清洗方法
CN102101977B (zh) * 2009-12-18 2015-09-16 安集微电子（上海）有限公司 一种化学机械抛光液
CN102268332B (zh) * 2010-06-01 2012-10-03 中国科学院上海微系统与信息技术研究所 一种相变材料抛光后清洗液
WO2012046179A1 (fr) * 2010-10-07 2012-04-12 Basf Se Composition de polissage aqueuse et procédé pour polissage chimique-mécanique de substrats ayant des couches diélectriques à faible k structurées ou non structurées
CN102757732B (zh) * 2012-06-28 2013-12-25 上海新安纳电子科技有限公司 Al衬底用化学机械抛光液
CN103865402A (zh) * 2012-12-17 2014-06-18 安集微电子（上海）有限公司 一种化学机械抛光液
CN111378972A (zh) * 2018-12-29 2020-07-07 安集微电子（上海）有限公司 一种化学机械抛光液
CN110564303B (zh) * 2019-09-24 2020-12-15 西南科技大学 用于铅化学机械抛光的抛光液及抗氧化工艺
CN113122141A (zh) * 2019-12-30 2021-07-16 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN114507527A (zh) * 2021-12-13 2022-05-17 福建中安高新材料研究院有限公司 一种ito蚀刻液及其制备方法、应用方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1463287A (zh) * 2001-05-25 2003-12-24 Ekc科技股份有限公司 氧化铈淤浆和制造基材的方法
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法
CN1543492A (zh) * 2001-08-20 2004-11-03 ��ǿ�ʽ 包括二氧化硅涂覆铈土的抛光淤浆
WO2004101695A1 (fr) * 2003-05-15 2004-11-25 Showa Denko K.K. Composition et procede de polissage
CN1629238A (zh) * 2003-11-13 2005-06-22 Cmp罗姆和哈斯电子材料控股公司 用于抛光铜的组合物和方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法
CN1463287A (zh) * 2001-05-25 2003-12-24 Ekc科技股份有限公司 氧化铈淤浆和制造基材的方法
CN1543492A (zh) * 2001-08-20 2004-11-03 ��ǿ�ʽ 包括二氧化硅涂覆铈土的抛光淤浆
WO2004101695A1 (fr) * 2003-05-15 2004-11-25 Showa Denko K.K. Composition et procede de polissage
CN1629238A (zh) * 2003-11-13 2005-06-22 Cmp罗姆和哈斯电子材料控股公司 用于抛光铜的组合物和方法

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CN1900146B (zh) 2012-02-29

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