WO2007048315A1 - Pate d'abrasion chimique-mecanique pour couche barriere au tantale - Google Patents

Pate d'abrasion chimique-mecanique pour couche barriere au tantale Download PDF

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Publication number
WO2007048315A1
WO2007048315A1 PCT/CN2006/002619 CN2006002619W WO2007048315A1 WO 2007048315 A1 WO2007048315 A1 WO 2007048315A1 CN 2006002619 W CN2006002619 W CN 2006002619W WO 2007048315 A1 WO2007048315 A1 WO 2007048315A1
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WO
WIPO (PCT)
Prior art keywords
chemical mechanical
mechanical polishing
polishing slurry
slurry according
abrasive particles
Prior art date
Application number
PCT/CN2006/002619
Other languages
English (en)
Chinese (zh)
Inventor
Judy Jianfen Jing
Peter Weihong Song
Yuan Gu
Sunny Chun Xu
Michael Ying Song
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd filed Critical Anji Microelectronics (Shanghai) Co., Ltd
Publication of WO2007048315A1 publication Critical patent/WO2007048315A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the present invention relates to a chemical mechanical polishing slurry, and more particularly to a chemical mechanical polishing slurry for a barrier layer.
  • the multilayer copper wiring in the current large scale integrated circuit chip also uses Ta or TaN as a barrier layer, so that chemical mechanical polishing (CMP) slurry for polishing the Ta or TaN barrier layer has appeared one after another.
  • CMP chemical mechanical polishing
  • US Pat. No. 6,719,920 discloses a polishing slurry for a barrier layer
  • US Pat. No. 6,503,418 discloses a polishing slurry of a Ta barrier layer containing an organic additive
  • US 6,638,326 A chemical mechanical planarization composition for Ta and TaN, CN 02116761.3 discloses a chemical mechanical global planarization polishing solution of copper and tantalum in a multi-scale integrated circuit multilayer copper wiring.
  • these polishing slurries have local and overall corrosion, high defect rate, and unreasonable polishing selectivity of different substrates. Therefore, there is an urgent need to develop a new chemical mechanical polishing slurry for a barrier layer. Summary of invention
  • An object of the present invention is to provide a chemical mechanical polishing slurry for a barrier layer in order to solve the above problems in the prior art.
  • the above object of the present invention is achieved by the following technical solutions:
  • the chemical mechanical polishing slurry for the ruthenium barrier layer of the present invention comprises abrasive particles, an organic phosphonic acid, a tetrazolium compound and a carrier. Since the chemical mechanical polishing slurry of the present invention incorporates an organic phosphonic acid and a tetrazolium compound, it has suitable polishing selectivity for different metals and oxides during polishing, can prevent metal depression, and significantly reduce the wafer surface. Organic matter, deposition of silicon dioxide and residues of other metal ions.
  • the concentration of the abrasive particles is 1 to 10%, and the organic phosphonic acid The concentration is 0.01 to 1%, the concentration of the tetrazole compound is 0.01 to 0.5%, and the carrier is the balance, and the above % means the total weight percentage of the entire chemical mechanical polishing slurry.
  • the size of the abrasive particles is preferably from 20 to 200 nm, more preferably from 30 to 100 nm, most preferably 70 nm.
  • the organic phosphonic acid is preferably 2-phosphonic acid butane-1,2,4-tricarboxylic acid (PBTCA), ethylenediaminetetramethylenephosphonic acid and/or diethylenetriamine pentamethylphosphine. acid.
  • PBTCA 2-phosphonic acid butane-1,2,4-tricarboxylic acid
  • ethylenediaminetetramethylenephosphonic acid and/or diethylenetriamine pentamethylphosphine. acid.
  • the tetrazole compound (TRA) is preferably ?-methyl-tetrazole, 5-phenyl-1-hydro-tetrazole and/or 1-hydro-tetrazolium.
  • the chemical mechanical polishing slurry for the ruthenium barrier layer of the present invention may further comprise 0.001 to 1% of an oxidizing agent.
  • the oxidizing agent may be various oxidizing agents in the prior art, preferably hydrogen peroxide, urea hydrogen peroxide, peroxyacetic acid, benzoyl peroxide, potassium persulfate and/or ammonium persulfate, more preferably The ground is hydrogen peroxide.
  • the abrasive particles of the present invention may also be referred to the prior art, preferably silica, alumina, yttria and/or polymer particles such as polyethylene or polytetrafluoroethylene, more preferably silica.
  • the chemical mechanical polishing slurry for the ruthenium barrier layer of the present invention preferably has a pH of 2.0 to 4.0, more
  • the pH adjusting agent may be various acids and/or bases to adjust the pH to a desired value, preferably potassium hydroxide, nitric acid, ethanolamine and/or triethanolamine or the like.
  • the chemical mechanical polishing slurry for the barrier layer of the present invention may further comprise a surfactant, a stabilizer, an inhibitor and/or a bactericide to further improve the polishing performance of the surface of the substrate.
  • the carrier is preferably water.
  • the chemical mechanical polishing slurry for the barrier layer of the present invention may further include other additives such as a surfactant, a bactericide, a stabilizer, and/or a suppressing agent, etc., and these additives may be referred to the prior art.
  • the positive progressive effect of the present invention is that the chemical mechanical polishing slurry 1) of the ruthenium barrier layer of the present invention can reduce the amount of abrasive particles, and significantly reduce defects, scratches, stains and other residues, thereby reducing surface contamination of the substrate. 2) Appropriate polishing selection ratio during polishing; It can prevent local and overall corrosion generated during metal polishing and improve product yield.
  • Figure 1 is a 3 ⁇ 4 surface micrograph of a blank germanium wafer before polishing
  • Figure 1 is a surface micrograph of a blank germanium wafer after polishing
  • FIG 3 is a micrograph of the surface of the test wafer after polishing (magnification 250 times) (TEOS refers to Si0 2 in the figure);
  • Figure 4 is an SEM image of the surface of the test wafer after polishing (magnification 5,000 times) (TEOS refers to Si0 2 in the figure).
  • TRAl 5-methyl-tetrazole
  • TRA2 1-hydro-tetrazole
  • TRA3 5-phenylhydrogen-tetrazole
  • EDTMP ethylenediaminetetramethylenephosphonic acid
  • DTPMP Ethylene triamine pentamethylphosphonic acid
  • the remaining component of the above chemical mechanical polishing slurry is water
  • 1 Q is Comparative Example 1 G .
  • the materials are added to the reactor in the following order: grinding granules, half of the amount of deionized water, organic phosphonic acid, TRA, H 2 0 2 and stirring uniformly, adding the remaining deionized water, and finally using the pH adjuster. (20% KOH or dilute HN0 3 , selected according to the pH value) Adjust to the desired pH value and continue to stir to a uniform fluid, and obtain a chemical mechanical polishing slurry after standing for 10 minutes.
  • the blank Ta, Cu, and Si0 2 wafers were polished by the chemical mechanical polishing slurries of the above Examples 1 to 8 and Comparative Example 1 G , respectively, and the polishing conditions were the same.
  • the polishing parameters were as follows: Logitech. Polishing pad, downward pressure 2 psi, turntable Speed / polishing head speed -60/80 rpm, polishing time 120s, chemical mechanical polishing slurry flow rate 100mL / min.
  • the polishing results are shown in Table 2. Table 2
  • the chemical mechanical polishing slurry of the present invention can adjust the removal rates of Ta, Cu and Si0 2 by adding organic acids and tetrazoles, and adjust the concentration of abrasive particles, organic acids and tetrazoles.
  • a suitable polishing selectivity results in better polishing selectivity when adjusting the oxidant concentration.
  • the defects can be significantly reduced at a lower abrasive particle concentration, and local and overall corrosion generated during metal polishing can be prevented, and surface contamination of the substrate can be reduced, and the chemical mechanical polishing slurry of the present invention can be used. Pitting corrosion on the surface of the Ta wafer after the material can be significantly less, thereby improving product yield. .
  • the silicon substrate wafers which have been sputtered with Ta/electroplated copper are polished and then polished with the chemical mechanical polishing slurry of Examples 2, 3 and 5 respectively.
  • the polishing results are shown in Table 3.
  • the chemical mechanical polishing slurry of the ruthenium barrier layer of the invention can reduce the amount of abrasive particles, and reduce the defects, scratches, stains and other residues, thereby reducing the surface contamination of the substrate; 2) during polishing It has a suitable polishing selection ratio; it can prevent local and overall corrosion generated during metal polishing and improve product yield.

Abstract

Une pâte d'abrasion chimique-mécanique pour couche barrière au tantale comprenant des particules abrasives, un acide phosphonique organique, des composés tétrazoles et un excipient. La pâte de cette invention permet d'éviter la corrosion locale et générale de métaux, de réduire la pollution de la surface de doublure, d'économiser les particules abrasives afin d'obtenir la sélectivité d'abrasion convenable pour différents métaux et oxydes.
PCT/CN2006/002619 2005-10-28 2006-10-08 Pate d'abrasion chimique-mecanique pour couche barriere au tantale WO2007048315A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200510030856.4 2005-10-28
CN2005100308564A CN1955248B (zh) 2005-10-28 2005-10-28 钽阻挡层用化学机械抛光浆料

Publications (1)

Publication Number Publication Date
WO2007048315A1 true WO2007048315A1 (fr) 2007-05-03

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PCT/CN2006/002619 WO2007048315A1 (fr) 2005-10-28 2006-10-08 Pate d'abrasion chimique-mecanique pour couche barriere au tantale

Country Status (2)

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CN (1) CN1955248B (fr)
WO (1) WO2007048315A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140062186A (ko) * 2009-10-26 2014-05-22 암젠 인크 인간 ｉｌ-２３ 항원 결합 단백질

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101153205A (zh) * 2006-09-29 2008-04-02 安集微电子（上海）有限公司 用于抛光低介电材料的化学机械抛光液
CN101457122B (zh) * 2007-12-14 2013-01-16 安集微电子（上海）有限公司 一种用于铜制程的化学机械抛光液
CN101906269A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种金属化学机械抛光的浆料及其使用方法
CN102477259B (zh) * 2010-11-30 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光浆料
CN104726028A (zh) * 2013-12-18 2015-06-24 安集微电子（上海）有限公司 一种化学机械抛光液及其使用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
WO2004101221A2 (fr) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc Compositions ameliorees de polissage chimico-mecanique de cuivre et de matieres associees et procede d'utilisation desdites compositions
WO2005047409A1 (fr) * 2003-11-14 2005-05-26 Showa Denko K.K. Composition de polissage et procede de polissage

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1930938A4 (fr) * 2005-09-09 2010-03-24 Asahi Glass Co Ltd Agent de polissage, procédé de polissage de surface à polir, et procédé de fabrication de dispositif à circuit intégré semi-conducteur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6803353B2 (en) * 2002-11-12 2004-10-12 Atofina Chemicals, Inc. Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents
WO2004101221A2 (fr) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc Compositions ameliorees de polissage chimico-mecanique de cuivre et de matieres associees et procede d'utilisation desdites compositions
WO2005047409A1 (fr) * 2003-11-14 2005-05-26 Showa Denko K.K. Composition de polissage et procede de polissage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140062186A (ko) * 2009-10-26 2014-05-22 암젠 인크 인간 ｉｌ-２３ 항원 결합 단백질
KR101652609B1 (ko) 2009-10-26 2016-08-30 암젠 인크 인간 ｉｌ-２３ 항원 결합 단백질

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CN1955248B (zh) 2011-10-12
CN1955248A (zh) 2007-05-02

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