WO2004101695A1 - Composition et procede de polissage - Google Patents

Composition et procede de polissage Download PDF

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Publication number
WO2004101695A1
WO2004101695A1 PCT/JP2004/006800 JP2004006800W WO2004101695A1 WO 2004101695 A1 WO2004101695 A1 WO 2004101695A1 JP 2004006800 W JP2004006800 W JP 2004006800W WO 2004101695 A1 WO2004101695 A1 WO 2004101695A1
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WIPO (PCT)
Prior art keywords
polishing
polishing composition
composition according
range
abrasive grains
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PCT/JP2004/006800
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English (en)
Inventor
Norihiko Miyata
Junichiro Ando
Tetsuro Kumita
Yoshiki Hayashi
Original Assignee
Showa Denko K.K.
Yamaguchi Seiken Kogyo K.K.
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Application filed by Showa Denko K.K., Yamaguchi Seiken Kogyo K.K. filed Critical Showa Denko K.K.
Publication of WO2004101695A1 publication Critical patent/WO2004101695A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Definitions

  • the present invention relates to a polishing composition for use in precise polish-finishing of a metal, plastic, glass, or similar material and to a polishing method. More particularly, the invention relates to a polishing composition and a polishing method for a magnetic disk which is installed in a hard disk drive of a computer.
  • Use of the polishing composition of the present invention is very advantageous in that a surface of an aluminum magnetic disk substrate which is plated with, for example, Ni-P can be polished at a high polishing rate, and a high-quality mirror-finished surface is provided without forming surface defects.
  • the recording density of a magnetic disk has increased by reducing the gap between the magnetic disk and a magnetic head in a hard disk drive (i.e., flying height).
  • flying height i.e., flying height
  • polishing agents are diversified and include high polishing rate, reduction in surface roughness, non- surface defects (micro-pits, micro-protrusions, and micro-scratches), reduction in waviness generally and locally, prevention of cut-off at the edge surface, prevention of adhesion of abrasive grains on a disk surface, prevention of staining of a disk surface, and excellent washability.
  • polishing compositions which attain a high polishing rate and provide a high-quality disk surface.
  • polishing rate one of the most important characteristics during polishing, and attain a high-quality polished surface which is resistant to polishing-related scratches and surface defects such as scratches, pits, and protrusions
  • aluminum nitride disclosed in JP-62-25187-A U.S. Patent No. 4, 705; 566) and a variety of inorganic acids and salts thereof have been proposed as a polishing accelerator serving as an additive for a polishing composition.
  • an object of the present invention is to provide a polishing composition which provides a high-quality polished surface without surface defects while a high polishing rate is maintained.
  • the gist of the present invention resides in a polishing composition which can attain the above object and which contains water, abrasive grains, a polishing accelerator, and a polycarboxylic acid salt having a carboxylic group number (n) of 20 to 300 or a derivative thereof (hereinafter also referred to as "a polishing aid"), and further optionally a finely divided crystal powder (hereinafter also referred to as "auxiliary abrasive grains”) and a surface modification agent. Accordingly, the present invention provides the following.
  • a polishing composition comprising water, abrasive grains, a polishing accelerator, and a polycarboxylic acid salt having a carboxylic group number (n) of 20 to 300 or a derivative thereof.
  • abrasive grains are at least one selected from the group consisting of alumina, silica, titania, zirconia, ceria, calcia, magnesia, manganese oxide and iron oxide.
  • polishing composition as described in any one of (1) to (4) above, wherein the abrasive grains comprise ⁇ -alumina.
  • the polishing accelerator comprises at least one species selected from among an organic acid, an inorganic acid salt, a combination of an organic acid and an organic acid salt, a combination of an organic acid and an inorganic acid salt, a sol product formed from an aluminum salt, and an organic phosphonic acid chelate compound.
  • the polishing composition according to (7) above which contains the organic acid, inorganic acid salt, combination of organic acid and organic acid salt, or combination of organic acid and inorganic acid salt in an amount falling within a range of 0.01 to 10 mass%.
  • the polishing composition according to (7) above which contains the organic phosphoric acid chelate compound in an amount falling within a range of 0.01 to 5 mass .
  • the finely divided crystal powder is at least one alumina selected from the group consisting of a high-purity alumina formed through an ammonium alum method, an ammonium dawsonite method, an aluminum alkoxide method employing metallic aluminum serving as a starting material, or a spark discharge method; fumed alumina; and/or alumina formed from boehmite/pseudoboehmite/bayerite.
  • the surface modification agent comprises at least one species selected from among sulfamic acid, phosphoric acid, nitric acid, hydroxypropyl cellulose, hydroxypropyl methyl cellulose, hydroxyethyl methyl cellulose, and ethyl hydroxyethyl cellulose.
  • (24) A composition which forms the polishing composition as set forth in any one of (1) to (23) above by dilution.
  • (25) A method of using the higher-concentration composition as set forth in (24) for the purpose of transportation or storage of the polishing composition.
  • a method for polishing a substrate comprising polishing a substrate by means of a polishing composition as set forth in any one of (1) to (23) above.
  • Fig. 1 is a schematic representation employed for explanation of determination of the amount of dub-off.
  • the mark S stands for a curve in the vicinity of the periphery of a disk, which is drawn by use of a surfcorder; h stands for a perpendicular line which is in contact with the circumferential end of a disk; A stands for a point on the curve which is 3,000 ⁇ m from perpendicular line h; B stands for a point on the curve which is 2,000 ⁇ m from perpendicular line h; C stands for a point on a straight line passing through points A and B, which is 500 ⁇ m from perpendicular line h; k stands for a perpendicular line passing through point C; D stands for a point at which perpendicular line k and curve s cross; t stands for a length between point C and point D (the amount of dub-off).
  • the abrasive grains employed in the polishing composition of the present invention are alumina, silica, titania, zirconia, ceria, calcia, magnesia, manganese oxide, iron oxide, or a similar compound. Among them, alumina is particularly preferably used.
  • the mean primary crystal size preferably falls within a range of 0.1 to 5 ⁇ m, particularly preferably 0.1 to 0.5 ⁇ m where both strength and density are satisfied.
  • the mean secondary particle size falls within a range of 0.3 to 5 ⁇ m, preferably 0.5 to 3 ⁇ m.
  • the alumina content falls within a range of 1 to 35 mass%, preferably 5 to 30 mass%.
  • the alumina can be produced by firing at an appropriate firing temperature a finely divided crystal powder aluminum hydroxide (gibbsite or bayerite) having a small mean particle size or firing at an appropriate firing aluminum hydroxide providing a dense crystal structure having few pores after firing (e.g., boehmite or pseudo-boehmite) .
  • a fired product of boehmite-type aluminum hydroxide provides a more dense crystal structure as compared with a fired product of gibbsite- type aluminum hydroxide, thereby enhancing a polishing rate.
  • gibbsite-type ⁇ - alumina having a primary crystal size of 0.5 ⁇ m or less and a specific surface area (BET value) at least 6 Vg to about 15 m 2 /g is particularly preferred.
  • the primary crystal size can be determined from an average value obtained through data analysis of a scanning electron microscope (SEM) photograph, and the mean second particle size can be obtained through measurement by means of a laser diffraction scattering particle size analyzer (e.g., SHIMADZU SALD-2000J), a laser Doppler diffraction particle size analyzer (Microtrac UPA) , or a similar apparatus.
  • the polishing composition of the present invention is characterized by containing a polishing aid.
  • a polishing aid a polycarboxylic acid salt having a carboxylic group number per molecule (n) of 20 to 300 or a derivative thereof is used.
  • the polishing aid serves as a mechanical polishing accelerator, thereby enhancing a polishing rate and preventing dub-off.
  • the polycarboxylic acid salt or derivative thereof serving as the polishing aid include a polyacrylic acid salt, a polymethacrylic acid salt, and derivative salts thereof.
  • preferred alkali components for forming a polycarboxylic acid salt include ammonia and alkali metals such as sodium and potassium.
  • derivative salts include salts of a copolymer or an ester polymer of (meth) acrylic acid-another carboxylic acid, (meth) acrylic acid-sulfonic acid, (meth) acrylic acid-maleic acid or a similar derivative.
  • examples of the derivatives mentioned in the specification include copolymers and ester polymers of acrylic acid-carboxylic acid, acrylic acid-sulfonic acid, or acrylic acid-maleic acid.
  • the carboxylic group number (n) is preferably 20 to 300, more preferably 60 to 120.
  • the carboxylic group number (n) is too small, the effects of enhancing the polishing rate and preventing the dub- off cannot be obtained, whereas when the number (n) is excessively large, the viscosity of the polishing composition slurry increases, thereby disturbing the removal thereof, impairing performance such as increasing the dub-off.
  • the polishing aid promotes polishing performance of abrasive grains contained in a slurry-like polishing composition. That is, the polishing aid enhances a thread-forming property of the slurry and disperses abrasive grains in the slurry, so as to prevent coarsening of abrasive grains due to aggregation.
  • the polishing aid regulates behavior of abrasive grains which are in direct contact with the polishing surface of a substrate, thereby promoting mechanical polishing action. As a result, the polishing performance of abrasive grains is remarkably enhanced. In addition, the polishing aid has been confirmed not to adversely affect the quality of the polished surface.
  • a surface of an aluminum magnetic disk substrate which is plated with, for example, Ni-P can be polished at a remarkably increased polishing rate, and a high-quality polished surface; i.e., a surface having no surface defects and having high surface precision and reduced dub-off and waviness, can be obtained.
  • the polishing aid is added in an amount falling within a range of 0.01 to 5 mass%, preferably 0.1 to 3 mass%, more preferably 0.3 to 2 mass%, from the viewpoint of enhancement of the polishing rate. • A too small amount and an excessive amount fail to attain the effect of the polishing aid.
  • the polishing composition may employ a finely divided crystal powder serving as auxiliary abrasive grains.
  • the finely divided crystal powder may be formed from a material identical to or different from that of the aforementioned abrasive grains. However, the same material is more preferred, with alumina being particularly preferred.
  • the crystal form e.g., ⁇ , ⁇ , ⁇
  • the alumina species which is readily crushed to form particles of a primary crystal size level is preferred for the purpose of regulating the surface roughness and surface quality in combination with the aforementioned base abrasive grains.
  • the primary crystal size preferably falls within a range of 0.005 ⁇ m to 0.07 ⁇ m, particularly preferably 0.01 to 0.05 ⁇ m.
  • the crystal form is preferably ⁇ , ⁇ , K, ⁇ , and ⁇ , with ⁇ , ⁇ , and ⁇ being more particularly preferred.
  • the specific surface area is preferably 20 to 250 m 2 /g, particularly preferably 60 to 100 m 2 /g.
  • the mean secondary particle size falls within a range of 0.05 to 8 ⁇ m, preferably 0.5 to 5 ⁇ m.
  • the alumina content falls within a range of 0.1 to 20 mass%, preferably 0.5 to 10 mass%.
  • the mean secondary particle size can be determined through measurement by means of the aforementioned laser diffraction scattering particle size analyzer (e.g.; SHIMADZU SALD-2000J), a laser doppler diffraction particle size analyzer (Microtrac UPA) , or a similar apparatus .
  • a laser diffraction scattering particle size analyzer e.g.; SHIMADZU SALD-2000J
  • a laser doppler diffraction particle size analyzer Microtrac UPA
  • the auxiliary abrasive grains included in a slurrylike polishing composition promote polishing performance of abrasive grains. That is, by adding auxiliary abrasive grains having a fine particle size to abrasive grains, the auxiliary abrasive grains act directly on the polishing surface, thereby remarkably enhancing the polishing action. In addition, the quality of the polished surface is not adversely affected.
  • a conceivable action of the auxiliary abrasive grains is considered as follows. Generally, abrasive grains act on a polishing surface by means of mechanical energy provided through agitation of the abrasive grains upon polishing a substrate. Therefore, a limitation is imposed on the reduction of the diameter of the abrasive grains to a minute level. Thus, abrasive grains themselves must be relatively large in size with respect to the roughness of the polishing surface.
  • auxiliary abrasive grains In contrast to abrasive grains, auxiliary abrasive grains have a remarkably small particle size. Therefore, the auxiliary abrasive grains themselves have a low kinetic energy, resulting in a small action force of polishing. However, by virtue of their small particle radius, the auxiliary abrasive grains are considered to provide an edgy polishing action to the polishing surface. In other words, the conceivable action may be as follows . When the finely divided crystal abrasive powder serving as auxiliary abrasive grains intervene between the polishing surface and abrasive grains, the finely divided crystal abrasive grains interact with abrasive grains.
  • the kinetic energy of abrasive grains is transferred to the finely divided crystal abrasive grains via collision with abrasive grains or pressing by abrasive grains.
  • auxiliary abrasive grains exert mechanical energy directly to the polishing surface, thereby providing a sharp polishing action.
  • auxiliary abrasive grains In order for the auxiliary abrasive grains to satisfactorily support abrasive grains, a limitation is preferably imposed on the amount of auxiliary abrasive grains intervening between the polishing surface and abrasive grains.
  • the auxiliary abrasive grains When the auxiliary abrasive grains are present in an excessively large amount, the auxiliary abrasive grains absorb and disperse the energy of abrasive grains, causing a retardation of polishing. Therefore, the auxiliary abrasive grains must be dispersed without causing an aggregation. In addition, an aggregation of abrasive grains with the auxiliary abrasive grains must be prevented.
  • a polishing aid is used to support polishing action of the auxiliary abrasive grains.
  • the micro-ridges receive the brunt of polishing action of the auxiliary abrasive grains, while the auxiliary abrasive grains are buried in the micro- troughs to cover the polishing surface.
  • the polishing composition of the present invention a surface of an aluminum magnetic disk substrate which is plated with, for example, Ni-P can be polished at a remarkably increased polishing rate, and a high-quality polished surface; i.e., a surface having no surface defects and having high surface precision and reduced dub-off and waviness, can be obtained.
  • the polishing accelerator (chemical polishing accelerator) employed in the polishing composition of the present invention may be an organic acid or an inorganic acid salt.
  • the organic acid may be at least one species selected from the group consisting of malonic acid, succinic acid, adipic acid, lactic acid, malic acid, citric acid, glycine, aspartic acid, tartaric acid, gluconic acid, heptogluconic acid, iminodiacetic acid, and fumaric acid.
  • the inorganic acid salt may be at least one species selected from the group consisting of sodium sulfate, magnesium sulfate, nickel sulfate, aluminum sulfate, ammonium sulfate, nickel nitrate, aluminum nitrate, ammonium nitrate, ferric nitrate, aluminum chloride, and nickel sulfa ate.
  • the organic acid content or the inorganic acid salt content preferably falls within a range of- 0.01 to 10 mass%.
  • the content is too small, the effect of the polishing accelerator is less, whereas the content is excessively large, pits and protrusions may be generated, in which case the quality of the polished surface may be deteriorated.
  • An excessively large content may also adversely affect the quality of the polishing liquid, for example, an aggregation of alumina particles.
  • the aforementioned polishing accelerator may be a combination of an organic acid and an organic acid salt, a combination of an organic acid and an inorganic acid salt, or a combination of an organic acid, an organic acid salt and an inorganic acid salt.
  • the organic acid may be at least one species selected from the group consisting of malonic acid, succinic acid, adipic acid, lactic acid, malic acid, citric acid, glycine, aspartic acid, tartaric acid, gluconic acid, heptogluconic acid, iminodiacetic acid, and fumaric acid.
  • the organic acid salt may be at least one species selected from the group consisting a potassium salt, a sodium salt, or an ammonium salt of the aforementioned organic acids.
  • the inorganic acid salt may be at least one species selected from the group consisting of sodium sulfate, magnesium sulfate, nickel sulfate, aluminum sulfate, ammonium sulfate, nickel nitrate, aluminum nitrate, ammonium nitrate, ferric nitrate, aluminum chloride, and nickel sulfamate.
  • the total amount thereof preferably falls within a range of 0.01 to 10 mass% based on the entire polishing composition.
  • the organic acid is more preferably incorporated in an amount at least 0.003 mass%.
  • a combination type polishing accelerator when the polishing aid content is less than 0.01 mass%, the effect of the polishing accelerator is poor, whereas when the content is in excess of 10 mass%, the quality of a polishing solution may be adversely affected, for example, an excessive increase in viscosity of the solution or aggregation of alumina particles, and ' the quality of the polished surface may be deteriorated through generation of pits and protrusions, which are disadvantageous.
  • an organic acid and an organic acid salt are used in combination, a combination of the same acid species attains more excellent polishing characteristics.
  • the aforementioned polishing accelerator may be a sol product derived from an aluminum salt described in JP-2002-20732 (WO02/02712 ) .
  • the sol product is produced through a high shear agitation and mixing of an aqueous solution containing any one aluminum salt hydrate or anhydrate selected from among inorganic acid aluminum salts such as aluminum sulfate, aluminum chloride, aluminum nitrate, aluminum phosphate, and aluminum borate; and organic acid aluminum salts such as aluminum acetate, aluminum lactate, and aluminum stearate, with one species selected from the group consisting of sodium hydroxide, potassium hydroxide, ammonia, organic amine compounds such as an alkyl amine (e.g., monomethylamine) and an alkanolamine (e.g., triethanolamine) , aminocarboxylic acids such as glycine, amine chelate compounds such as iminodiacetic acid, aminocarboxylic acid chelate compounds such as ethylenediaminetetraacetic acid
  • the sol product is formed in a chain mechanism by mixing an aluminum salt with a substance (e.g., ammonia or amine) which readily releases a hydroxyl group upon reaction with water, a compound having a terminal hydroxyl group, or a compound having a hydroxyl group such as sodium hydroxide or potassium hydroxide.
  • a substance e.g., ammonia or amine
  • the amount of the sol product derived from an aluminum salt falls preferably within a range of 0.01 to 5 mass% based on the entire polishing composition. When the amount is too small, the effect of the sol product is poor, whereas when the amount is excessively large, gelation may occur and surface defects such as pits and protrusions may be generated. More preferably, the amount falls within a range of 0.05 to 2 mass%.
  • the aforementioned polishing accelerator may be a organic phosphonic acid chelate compound described in Japanese Patent application Laid-Open (kokai) NO. 2001- 131535.
  • the chelate compound is at least one species selected from the group consisting of diethylenetriaminepentamethylenephosphonic acid, phosphonobutanetricarboxilic acid (hereinafter abbreviated as PBTC), phosphonohydroxyacetic acid, hydroxyethyldimethylphosphonic acid, aminotrismethylenephosphonic acid (NTMP), hydroxyethanediphosphonic acid (HEDP) , ethylenediaminetetramethylenephosphonic acid, hexamethylenediaminetetramethylenephosphonic acid, and salts thereof.
  • PBTC phosphonobutanetricarboxilic acid
  • NTMP aminotrismethylenephosphonic acid
  • HEDP hydroxyethanediphosphonic acid
  • ethylenediaminetetramethylenephosphonic acid hexamethylenediamine
  • the amount of the organic phosphonic acid chelate compound preferably falls within a range of 0.01 to 5 mass% based on the entire polishing composition. When the amount is too small, the effect of polishing rate enhancement is less, whereas when the amount is excessively large, surface defects such as pits and protrusions may be generated. More preferably, the amount falls within a range of 0.05 to 2 mass%.
  • the polishing composition may further contain as a surface modification agent an inorganic acid containing a non-metallic element belonging to Group 5 or 6 in the periodic table.
  • the inorganic acid containing a non-metallic element belonging to Group 5 or 6 in the periodic table include sulfamic acid, phosphoric acid, and nitric acid.
  • the amount of the inorganic acid preferably falls within a range of 0.01 to 5 mass% based on the entire polishing composition. Both a too small amount and an excessive amount result in poor effect of the inorganic acid. An excessive amount may reduce polishing rate. More preferably, the amount falls within a range of 0.05 to 2 mass%.
  • a hydroxyalkyl alkyl cellulose (hereinafter abbreviated as HRRC) disclosed in Pamphlet of WO 01/23485 may be used.
  • the hydroxyalkyl alkyl cellulose is at least one species selected from the group consisting of hydroxypropyl cellulose (HPC), hydroxypropyl methyl cellulose (HPMC), hydroxyethyl methyl cellulose, and ethyl hydroxyethyl cellulose.
  • the amount of the HRRC preferably falls within a range of 0.001 to 2 mass% based on the entire polishing composition.
  • the polishing composition may further contains, in accordance with needs, alumina sol, a surfactant, a detergent, an anticorrosive agent, an antiseptic agent, a pH-regulator , other cellulose species, or a surface modification agent.
  • alumina sol a surfactant, a detergent, an anticorrosive agent, an antiseptic agent, a pH-regulator , other cellulose species, or a surface modification agent.
  • the aforementioned concentrations of components constituting the polishing composition of the present invention are suitable concentrations for polishing a substrate.
  • the polishing composition of the present invention is prepared at component concentrations higher than the aforementioned concentrations, and upon use, diluted so as the concentrations to fall within the aforementioned ranges.
  • the polishing composition having a higher concentration may be preferably used for the purpose of transportation and storage.
  • the polishing composition preferably has a pH falling within a range of 2 to 6.
  • polishing composition I ⁇ Preparation of polishing compositions> Aluminum hydroxide was heated at about 1,200°C in a firing furnace under atmospheric conditions, to thereby form ⁇ -alumina. Separately, a carefully selected commercial alumina serving as a starting material was pulverized and classified in a wet manner, to thereby form an alumina base material sample having a mean secondary particle size of 0.7 ⁇ m. In addition, a finely divided alumina crystal powder was prepared by calcining at an appropriate temperature high-purity alumina or aluminum hydroxide prepared through a specific method.
  • a sol product derived from an aluminum salt was prepared by mixing the aluminum salt with a specific compound such as aqueous ammonia.
  • polishing composition samples were prepared by sequentially weighing, adding, and mixing the following components: water, alumina, a finely divided alumina crystal powder, a polishing accelerator such as an organic acid or an organic acid salt, a sol product derived from an aluminum salt, a chelating agent, an inorganic acid containing a Group 5 element or Group 6 element, a cellulose-based surface modification agent dissolved in water, and a polishing aid. These samples were subjected to a polishing test.
  • Polishing conditions, polishing characteristics, and the evaluation method are as follows. (Polishing Conditions)
  • polishing test conditions •Polishing test machine; 9B double-sided polishing machine (product of System Seiko K.K. ) •Polishing pad; H9900S
  • Curve S is drawn by use of a surfcorder in the vicinity of the periphery of a polished hard disk surface, and perpendicular line h is provided at the outermost portion of the curve S.
  • a point on the curve which is 3,000 ⁇ m from perpendicular line h toward the center of the disk is represented by A
  • B a point on the curve which is 2,000 ⁇ m from perpendicular line h toward the center of the disk
  • C represents a point on a straight line passing through points A and B, and is 500 ⁇ m from perpendicular line h.
  • Perpendicular line k passing through point C is provided.
  • D represents a point at which perpendicular line k and curve S cross. Length t between point C and point D was employed as the amount of dub-off.
  • Tables 1 and 2 show polishing test scores of the samples of the Examples of the present invention, and Table 3 shows polishing test scores of the samples of the Comparative Examples.
  • A-l and A-3 represent gibbsite- derived ⁇ -alumina, and A-2 represents boehmite-derived ⁇ -alumina.
  • A-l and A-3 represent gibbsite-derived ⁇ -alumina.
  • A-2 represents boehmite-derived ⁇ -alumina.
  • Table 1 shows test results of Examples 1 to 14, wherein polishing compositions falling within the scope of the present invention. As is clear from Table 1, all these samples provide polished surfaces of excellent surface morphology in terms of surface defects, surface roughness, dub-off, etc., and provide a remarkably enhanced polishing rate. In contrast, as shown in Table 2, all the samples of Comparative Examples 1 to 10 containing no such polishing aid described in the attached claims exhibit poor polishing rate and inferior surface morphology.
  • ⁇ Preparation of polishing compositions Aluminum hydroxide was heated at about 1,200°C in a firing furnace under atmospheric conditions, to thereby form ⁇ -alumina. Separately, a carefully selected commercial alumina serving as a starting material was pulverized and classified in a wet manner, to thereby form an alumina base material sample having a mean secondary particle size of 0.7 ⁇ m. In addition, a finely divided alumina crystal powder was prepared by calcining at an appropriate temperature high-purity alumina or aluminum hydroxide prepared through a specific method. A sol product derived from an aluminum salt was prepared by mixing the aluminum salt with a specific compound such as aqueous ammonia.
  • polishing composition samples were prepared by sequentially weighing, adding, and mixing the following components: water, alumina, a finely divided alumina crystal powder, a polishing accelerator such as an organic acid or an organic acid salt, a sol product derived from an aluminum salt, a chelating agent, an inorganic acid containing an element of Group 5 or 6 in the periodic table, a cellulose-based surface modification agent dissolved in water, and a polishing aid. These samples were subjected to a polishing test.
  • Polishing conditions, polishing characteristics, and the evaluation method are the same as those for Polishing Composition I.
  • Tables 3 and 4 show polishing test scores of the samples of the Examples 21 to 35 of the present invention, and Table 2 shows polishing test scores of the samples of the Comparative Examples 11 to 16.
  • A-l represents gibbsite-derived ⁇ -alumina
  • A-2 represents boehmite-derived ⁇ - alumina
  • UA ⁇ and UA ⁇ represent ⁇ -alumina and ⁇ -alumina, respectively, produced through the ammonium alum method (products of Showa Denko K. K. )
  • CR ⁇ represents ⁇ - alumina produced through the same method (product of Baikowski).
  • UFA represents fumed ⁇ -alumina (product of Showa Denko K. K.).
  • AKP ⁇ represents ⁇ -alumina produced through the aluminum alkoxide method (product of Sumitomo Chemical Co., Ltd.).
  • RG ⁇ represents ⁇ -alumina produced through the spark discharge method (Iwatani Kagaku) .
  • A- 2 ⁇ represents ⁇ -alumina produced by firing boehmite, and
  • A-l ⁇ represents ⁇ -alumina produced by firing gibbsite.
  • A-l and A-3 represent gibbsite-derived ⁇ -alumina.
  • A-2 represents boehmite-derived ⁇ -alumina.
  • Tables 3 and 4 show the test results of Examples 21 to 35, wherein polishing compositions falling within the scope of the present invention. As is clear from the Tables, all these samples provide polished surfaces of excellent surface morphology in terms of surface defects, surface roughness, dub-off, etc., and provide a remarkably enhanced polishing rate. In contrast, as shown in Table 3, all the samples of Comparative Examples 11 to 16 containing no finely divided crystal powder and a polishing aid exhibit poor polishing rate and inferior surface morphology.
  • the polishing composition of the present invention having the aforementioned constitution, attains high polishing rate and provides high-quality mirror-finished surface without forming surface defects. Thus, the composition is remarkably useful.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

La présente invention concerne une composition de polissage comprenant de l'eau, des grains abrasifs, une poudre de cristal finement divisée présentant un accélérateur de polissage, ainsi qu'un agent tensioactif qui est un sel d'acide carboxylique présentant un nombre de groupes carboxylique par molécule (n) qui va de 20 à 300 ou un dérivé de celui-ci, et éventuellement une taille de cristal primaire allant de 0,005 νm à 0,07 νm et un agent de modification de surface. On peut ainsi obtenir un haut degré de polissage et une surface à finition miroir de grande qualité, sans formation de défauts de surface.
PCT/JP2004/006800 2003-05-15 2004-05-13 Composition et procede de polissage WO2004101695A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2003-137615 2003-05-15
JP2003137615 2003-05-15
US47311703P 2003-05-27 2003-05-27
US60/473,117 2003-05-27
JP2003156457 2003-06-02
JP2003-156457 2003-06-02
US47775403P 2003-06-12 2003-06-12
US60/477,754 2003-06-12

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EP1616926A1 (fr) * 2004-07-15 2006-01-18 Interuniversitair Microelektronica Centrum ( Imec) Composition de suspension epaisse et polissage chimique et mecanique du cuivre integre dans une couche barriere de tungstene
EP1734091A1 (fr) * 2005-06-15 2006-12-20 Clariant Produkte (Deutschland) GmbH Composition de conditionnement de plancher
WO2007009365A1 (fr) * 2005-07-21 2007-01-25 Anji Microelectronics (Shanghai) Co., Ltd Liquide de polissage chimique mecanique
WO2007048314A1 (fr) * 2005-10-28 2007-05-03 Anji Microelectronics (Shanghai) Co., Ltd Pate d'abrasion chimique-mecanique pour cuivre
WO2007048313A1 (fr) * 2005-10-28 2007-05-03 Anji Microelectronics (Shanghai) Co., Ltd Pate d'abrasion chimique-mecanique pour couche barriere
WO2007139442A1 (fr) * 2006-06-01 2007-12-06 Obschestvo S Ogranichennoi Otvetstvennostuy 'vmpavto' Concentré de rodage et de finition à charges minérales modifiantes
US20100084373A1 (en) * 2008-09-29 2010-04-08 Showa Denko K.K. Method for manufacturing perpendicular magnetic recording medium
CN101856806A (zh) * 2009-04-10 2010-10-13 宋健民 具有表面修饰的超研磨颗粒的超研磨工具及其相关方法
CN102627917A (zh) * 2012-03-23 2012-08-08 江苏中晶科技有限公司 玻璃以及含硅化合物抛光加速剂及其生产方法、应用
CN104327741A (zh) * 2014-09-28 2015-02-04 顾泉 用于研磨蓝宝石基板的研磨组合物及其应用
CN107365560A (zh) * 2017-08-04 2017-11-21 安徽宽居电器有限公司 一种玻璃加工用高效抛光液
US10093834B2 (en) 2014-09-29 2018-10-09 Fujimi Incorporated Polishing composition and polishing method

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US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6309434B1 (en) * 1999-09-28 2001-10-30 Fujimi Incorporated Polishing composition and method for producing a memory hard disks
US20030041526A1 (en) * 2001-06-21 2003-03-06 Shigeo Fujii Polishing composition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6309434B1 (en) * 1999-09-28 2001-10-30 Fujimi Incorporated Polishing composition and method for producing a memory hard disks
US20030041526A1 (en) * 2001-06-21 2003-03-06 Shigeo Fujii Polishing composition

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7589052B2 (en) 2004-07-15 2009-09-15 Imec Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals
EP1616926A1 (fr) * 2004-07-15 2006-01-18 Interuniversitair Microelektronica Centrum ( Imec) Composition de suspension epaisse et polissage chimique et mecanique du cuivre integre dans une couche barriere de tungstene
US8080505B2 (en) 2004-07-15 2011-12-20 Imec Slurry composition and method for chemical mechanical polishing of copper integrated with tungsten based barrier metals
EP1734091A1 (fr) * 2005-06-15 2006-12-20 Clariant Produkte (Deutschland) GmbH Composition de conditionnement de plancher
WO2007009365A1 (fr) * 2005-07-21 2007-01-25 Anji Microelectronics (Shanghai) Co., Ltd Liquide de polissage chimique mecanique
WO2007048314A1 (fr) * 2005-10-28 2007-05-03 Anji Microelectronics (Shanghai) Co., Ltd Pate d'abrasion chimique-mecanique pour cuivre
WO2007048313A1 (fr) * 2005-10-28 2007-05-03 Anji Microelectronics (Shanghai) Co., Ltd Pate d'abrasion chimique-mecanique pour couche barriere
WO2007139442A1 (fr) * 2006-06-01 2007-12-06 Obschestvo S Ogranichennoi Otvetstvennostuy 'vmpavto' Concentré de rodage et de finition à charges minérales modifiantes
US8398870B2 (en) * 2008-09-29 2013-03-19 Showa Denko K.K. Method for manufacturing perpendicular magnetic recording medium
US20100084373A1 (en) * 2008-09-29 2010-04-08 Showa Denko K.K. Method for manufacturing perpendicular magnetic recording medium
CN101856806A (zh) * 2009-04-10 2010-10-13 宋健民 具有表面修饰的超研磨颗粒的超研磨工具及其相关方法
CN101856806B (zh) * 2009-04-10 2015-07-22 宋健民 具有表面修饰的钻石颗粒的超研磨工具及其相关方法
CN102627917A (zh) * 2012-03-23 2012-08-08 江苏中晶科技有限公司 玻璃以及含硅化合物抛光加速剂及其生产方法、应用
CN104327741A (zh) * 2014-09-28 2015-02-04 顾泉 用于研磨蓝宝石基板的研磨组合物及其应用
CN104327741B (zh) * 2014-09-28 2016-06-15 顾泉 用于研磨蓝宝石基板的研磨组合物及其应用
US10093834B2 (en) 2014-09-29 2018-10-09 Fujimi Incorporated Polishing composition and polishing method
CN107365560A (zh) * 2017-08-04 2017-11-21 安徽宽居电器有限公司 一种玻璃加工用高效抛光液

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