WO2011072492A1 - Liquide de polissage mécano-chimique - Google Patents

Liquide de polissage mécano-chimique Download PDF

Info

Publication number
WO2011072492A1
WO2011072492A1 PCT/CN2010/002063 CN2010002063W WO2011072492A1 WO 2011072492 A1 WO2011072492 A1 WO 2011072492A1 CN 2010002063 W CN2010002063 W CN 2010002063W WO 2011072492 A1 WO2011072492 A1 WO 2011072492A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
polishing liquid
star
liquid according
group
Prior art date
Application number
PCT/CN2010/002063
Other languages
English (en)
Chinese (zh)
Inventor
荆建芬
蔡鑫元
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Publication of WO2011072492A1 publication Critical patent/WO2011072492A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Definitions

  • the invention relates to a chemical mechanical polishing liquid
  • the polished surface of the substrate is directly in contact with the rotating polishing pad while applying pressure on the back surface of the substrate.
  • the polishing pad rotates with the stage while maintaining a downward force on the back side of the substrate, and a liquid composed of an abrasive and a chemically active solution (commonly referred to as a chemical mechanical polishing liquid) is applied to the polishing pad.
  • the polishing liquid chemically reacts with the film being polished and mechanically starts the polishing process.
  • Chemical mechanical polishing fluids are an important factor in CMP, and suitable chemical mechanical polishing fluids can be selected to change the polishing performance according to the needs of the process.
  • a polishing fluid for aluminum containing abrasive particles, phosphoric acid and hydrogen peroxide, which has a high removal rate of aluminum, is disclosed in U.S. Patent No. 5,209,816.
  • the present invention discloses a new chemical mechanical polishing liquid for polishing a metal layer.
  • This polishing liquid can be formed by combining the following materials: abrasive particles, complexing agents, and corrosion inhibitors.
  • the use of the slurry of the present invention can reduce the metal removal rate, prevent overall and local corrosion of the metal material, significantly reduce defects, and improve surface quality.
  • a specific method of the present invention is to add a corrosion inhibitor to the polishing liquid.
  • the corrosion inhibitor is a polymer surfactant having a star structure
  • the chemical mechanical polishing liquid characterized in that the pigment affinity group is one or more of a hydroxyl group, an amino group and a carboxyl group.
  • the polymerizable monomer forming the star-shaped polymer containing the pigment-affinity group includes one or more of the following: an acrylic monomer, an acrylate monomer, an acrylamide monomer, and an epoxy acetamidine. .
  • the acrylic monomer is acrylic acid and/or methacrylic acid; the acrylate monomer is methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, A One or more of propyl acrylate, butyl acrylate, butyl methacrylate, hydroxyethyl acrylate and hydroxyethyl methacrylate; the acrylamide monomer is acrylamide and/or Methacrylamide.
  • the monomer forming the star polymer containing the pigment-affinity group also includes other vinyl monomers.
  • the other vinyl monomer is ethylene, propylene, styrene or p-methylstyrene.
  • the star polymer containing the pigment affinity group is a polyacrylic acid star homopolymer, a binary star copolymer of styrene and hydroxyethyl acrylate, and two of methyl p-styrene and ethylene oxide.
  • Metastar copolymer binary star copolymer of styrene and epoxy oxime, binary star copolymer of methyl methacrylate and epoxy oxime, binary of methyl acrylate and hydroxyethyl acrylate Star copolymer, acrylic acid and acrylic acid A binary star copolymer of hydroxyethyl enoate, and one or more of a trivalent star copolymer of acrylic acid, butyl acrylate and acrylamide.
  • the star polymer containing the pigment-affinity group has a number average molecular weight of 800 to 50,000.
  • the content of the star-type polymer containing the pigment-affinity group is 0.0001 to 5% by mass.
  • the abrasive particles are one or more of silica, alumina, silica, aluminum-coated silica, ceria, titania and polymer abrasive particles.
  • the content of the abrasive particles is 0.1 to 20% by mass.
  • the abrasive particles have a particle diameter of 20 to 150 nm.
  • the complexing agent is an organic acid and a salt thereof, an organic phosphonic acid and a salt thereof.
  • the organic acid is acetic acid, oxalic acid, citric acid, tartaric acid, malonic acid, succinic acid, maleic acid, malic acid, lactic acid, tannic acid, gallic acid and sulfosalicylic acid, ethylenediaminetetraacetic acid.
  • organic phosphonic acid is 2-phosphonic acid butane-1 , 2, 4-tricarboxylic acid, aminotrimethylene phosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylene phosphonic acid, diethylenetriamine pentamethylphosphonic acid, polyol phosphonate, 2-hydroxyl
  • phosphonic acid acetic acid, ethylenediaminetetramethylene phosphonic acid, and polyaminopolyether methylphosphonic acid is an ammonium salt, a potassium salt, a sodium salt or the like.
  • the content of the complexing agent is 0.01% to 10 % by mass.
  • the chemical mechanical polishing liquid of the present invention may further comprise an oxidizing agent.
  • the oxidizing agent can be any oxidizing agent in the prior art, preferably hydrogen peroxide, ferric nitrate, organic peroxides and/or inorganic peroxides.
  • the chemical mechanical polishing liquid of the present invention may further include a surfactant, a viscosity modifier, a pH adjuster, and the like.
  • Another object of the present invention is to provide the use of the chemical mechanical polishing liquid of the present invention in polishing a metal, which is aluminum, copper, tantalum, tantalum nitride, titanium, titanium nitride, silver or gold, preferably polished aluminum.
  • the positive progress of the present invention is that the chemical mechanical polishing liquid of the present invention can significantly reduce the defect rate, increase the level of planarization of the metal surface, and significantly reduce the polishing rate of the metal.
  • Table 1 shows Examples 1 to 30 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, all the components were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO 3 .
  • Table 2 shows the comparative polishing liquid 1 and the polishing liquid of the present invention, and according to the formulation given in the table, the mass percentage is made up to 100% with water, and adjusted to the desired pH value with KOH or HNO 3 . Mix well.
  • the blank aluminum wafer was polished using the comparative polishing liquid 1 and the polishing liquids 31 to 36 of the present invention, and the decanting rate is shown in Table 3.
  • the aluminum wafer was immersed in the polishing solution for 30 minutes, and the static corrosion rate of aluminum was measured. See Table 3.
  • Polishing material Empty aluminum wafer; Polishing conditions: Downforce 3Psi, Polishing disc and polishing head speed 70/80rpm, polishing pad PPG MX710, polishing liquid flow rate 100ml/min, polishing machine for Logitech PM5 Polisher
  • Table 3 compares the removal rate of metal aluminum by polishing solution 1 and polishing solution 3 ⁇ 36

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

La présente invention concerne un liquide de polissage mécano-chimique pour métal pouvant être formé en combinant les substances suivantes : des particules abrasives, un agent complexant et un inhibiteur de corrosion. En utilisant le liquide de polissage, le taux d'élimination du métal est réduit et la corrosion globale ou partielle sur le métal est empêchée, réduisant donc de façon évidente les défauts et améliorant la qualité de la surface.
PCT/CN2010/002063 2009-12-18 2010-12-17 Liquide de polissage mécano-chimique WO2011072492A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200910201381.9A CN102101977B (zh) 2009-12-18 2009-12-18 一种化学机械抛光液
CN200910201381.9 2009-12-18

Publications (1)

Publication Number Publication Date
WO2011072492A1 true WO2011072492A1 (fr) 2011-06-23

Family

ID=44155053

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/002063 WO2011072492A1 (fr) 2009-12-18 2010-12-17 Liquide de polissage mécano-chimique

Country Status (2)

Country Link
CN (1) CN102101977B (fr)
WO (1) WO2011072492A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102757732B (zh) * 2012-06-28 2013-12-25 上海新安纳电子科技有限公司 Al衬底用化学机械抛光液
CN102796458B (zh) * 2012-07-17 2014-04-23 清华大学 化学机械抛光水性组合物及钛基片化学机械抛光工艺方法
CN102876819B (zh) * 2012-10-16 2014-06-25 四川大学 无氨软化助剂及其在皮革软化工艺中的应用
CN103725256A (zh) * 2013-12-31 2014-04-16 上海集成电路研发中心有限公司 用于cmp的研磨颗粒体系及抛光液
CN104342704A (zh) * 2014-10-20 2015-02-11 苏州大学 一种无氧化剂的碱性铝合金抛光液及其制备方法
CN104388937B (zh) * 2014-11-03 2017-01-25 西南石油大学 用于铝合金磨砂外饰件的化学抛光液及其应用
CN108251844B (zh) * 2018-03-29 2020-03-10 山西银光华盛镁业股份有限公司 一种镁合金压铸件光亮处理液
CN111020590A (zh) * 2019-11-25 2020-04-17 昆山兰博旺新材料技术服务有限公司 环保型铝合金化学抛光液

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1644640A (zh) * 2003-12-19 2005-07-27 Cmp罗姆和哈斯电子材料控股公司 用于铜的受控抛光的组合物和方法
CN1699444A (zh) * 2004-02-23 2005-11-23 Cmp罗姆和哈斯电子材料控股公司 用于控制半导体晶片中金属互连去除速率的抛光组合物
CN1900146A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 化学机械抛光液
CN101747844A (zh) * 2008-12-19 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
WO2010069149A1 (fr) * 2008-12-19 2010-06-24 安集微电子（上海）有限公司 Liquide de polissage chimique-mécanique

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1644640A (zh) * 2003-12-19 2005-07-27 Cmp罗姆和哈斯电子材料控股公司 用于铜的受控抛光的组合物和方法
CN1699444A (zh) * 2004-02-23 2005-11-23 Cmp罗姆和哈斯电子材料控股公司 用于控制半导体晶片中金属互连去除速率的抛光组合物
CN1900146A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 化学机械抛光液
CN101747844A (zh) * 2008-12-19 2010-06-23 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
WO2010069149A1 (fr) * 2008-12-19 2010-06-24 安集微电子（上海）有限公司 Liquide de polissage chimique-mécanique

Also Published As

Publication number Publication date
CN102101977A (zh) 2011-06-22
CN102101977B (zh) 2015-09-16

Similar Documents

Publication Publication Date Title
WO2011072492A1 (fr) Liquide de polissage mécano-chimique
WO2007009365A1 (fr) Liquide de polissage chimique mecanique
US6402978B1 (en) Magnetic polishing fluids for polishing metal substrates
TWI434955B (zh) 含鎢基材的化學機械平坦化方法
WO2008025209A1 (fr) Pâte de polissage pour matériau faiblement diélectrique
WO2011060616A1 (fr) Liquide de polissage chimio-mécanique et son utilisation
WO2007009366A1 (fr) Composition de polissage chimique et mecanique et ses utilisations
TWI333974B (en) Slurry for chemical mechanical polishing of aluminum
CN102477262B (zh) 一种化学机械抛光浆料
TWI635168B (zh) Chemical mechanical polishing slurry
WO2011069345A1 (fr) Pâte de polissage mécano-chimique et son utilisation
JP5322921B2 (ja) Ｃｍｐスラリー用補助剤
CN104093810B (zh) 金属用研磨液及研磨方法
WO2007048314A1 (fr) Pate d'abrasion chimique-mecanique pour cuivre
WO2006042466A1 (fr) Systeme, procede et suspension abrasive pour polissage chimico-mecanique
KR100672940B1 (ko) 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
US20050045852A1 (en) Particle-free polishing fluid for nickel-based coating planarization
US11066575B2 (en) Chemical mechanical planarization for tungsten-containing substrates
JP2001139937A (ja) 金属用研磨液及び研磨方法
JP7066480B2 (ja) 砥粒分散液、研磨用組成物キットおよび磁気ディスク基板の研磨方法
WO2006122492A1 (fr) Pate a polissage
KR20200051822A (ko) 텅스텐 버프 적용을 위한 표면 처리된 연마제 입자
WO2006122491A1 (fr) Pate a polissage
JP6637816B2 (ja) 研磨用組成物、基板の研磨方法および基板の製造方法
WO2012071780A1 (fr) Bouillie de polissage chimico-mécanique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10836931

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10836931

Country of ref document: EP

Kind code of ref document: A1