WO2010069149A1 - Liquide de polissage chimique-mécanique - Google Patents

Liquide de polissage chimique-mécanique Download PDF

Info

Publication number
WO2010069149A1
WO2010069149A1 PCT/CN2009/001498 CN2009001498W WO2010069149A1 WO 2010069149 A1 WO2010069149 A1 WO 2010069149A1 CN 2009001498 W CN2009001498 W CN 2009001498W WO 2010069149 A1 WO2010069149 A1 WO 2010069149A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
polishing liquid
mechanical polishing
chemical mechanical
liquid according
Prior art date
Application number
PCT/CN2009/001498
Other languages
English (en)
Chinese (zh)
Inventor
荆建芬
蔡鑫元
Original Assignee
安集微电子（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 安集微电子（上海）有限公司 filed Critical 安集微电子（上海）有限公司
Priority to CN200980151466.9A priority Critical patent/CN102245724A/zh
Publication of WO2010069149A1 publication Critical patent/WO2010069149A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C23F3/04—Heavy metals

Definitions

  • the present invention relates to a chemical mechanical polishing liquid.
  • 5,527,423 discloses a A chemical mechanical polishing slurry of a metal layer
  • US Pat. No. 6,821,897 discloses a method of copper CMP using a polymer complexing agent
  • Patent No. CN 02114147.9 discloses a copper chemical-mechanical polishing process polishing liquid
  • No. CN 01818940.7 discloses a slurry for chemical mechanical polishing of copper
  • Patent No. CN 98120987.4 discloses a CMP slurry for copper and an integrated electric confirmation The manufacturing method of the road.
  • the technical problem to be solved by the present invention is to overcome the defects of the existing chemical mechanical polishing liquid for polishing copper, which is easy to cause scratches on the surface of the substrate, contamination and excessive removal of the copper block to cause depression, and provide a Maintaining a high copper removal rate, reducing the depression of the polished copper block, preventing chemical and mechanical polishing of the local and overall corrosion of the metallic copper.
  • the chemical mechanical polishing liquid of the present invention contains a star polymer containing a pigment affinity group, abrasive particles, a complexing agent, an oxidizing agent, and water.
  • the pigment affinity group means a group containing one or more elements of oxygen, nitrogen and sulfur, preferably one or more of a hydroxyl group, an amino group and a carboxyl group;
  • the star polymer refers to a polymer that couples three or more molecular chains in a radial form centering on one symmetry center in the molecule.
  • the pigment-affinity group contained in the star-type polymer containing the pigment-affinity group may be one or more kinds of pigment-affinity groups.
  • the star polymer containing the pigment-affinity group may be a homopolymer or a copolymer.
  • the polymerizable monomer forming the polymer preferably includes one or more of the following: an acrylic monomer, an acrylate monomer, an acrylamide monomer, and oxirane.
  • the acrylic monomer is preferably acrylic acid and/or methacrylic acid; and the acrylate monomer is preferably methyl acrylate, methyl methacrylate, ethyl acrylate, methacrylic acid.
  • the acrylamide monomer Preferred are acrylamide and/or methacrylamide.
  • the monomer in the star polymer forming the pigment-containing affinity group may further contain other polymerizable monomers without a pigment affinity group, such as other vinyl monomers, preferably ethylene, propylene, Styrene or p-methylstyrene.
  • the vinyl monomer means a polymerizable monomer containing a vinyl unit.
  • preferred star-type polymers containing pigment-affinity groups are polyacrylic acid star-type homopolymers, binary star copolymers of styrene and hydroxyethyl acrylate, p-methylstyrene and epoxy B.
  • the number average molecular weight of the star polymer containing the pigment-affinity group is preferably
  • the content of the pigment-containing group-containing star polymer is preferably 0.0001% to 3% by mass, more preferably 0.001% to 1% by mass; wherein the abrasive particles can be conventional in the art.
  • the abrasive particles used are preferably selected from the group consisting of silica, alumina, aluminum-doped silica, aluminum-coated silica, ceria, titania, and polymeric abrasive particles such as polystyrene, poly One or more of methyl methacrylate.
  • the particle diameter of the abrasive particles is preferably from 20 to 150 nm, more preferably from 30 to 120 nm.
  • the content of the abrasive particles is preferably from 0.1 to 5% by mass, more preferably from 0.1 to 3% by mass.
  • the oxidizing agent may be an oxidizing agent conventionally used in the art, preferably selected from the group consisting of hydrogen peroxide, urea peroxide, peroxycarboxylic acid, peracetic acid, persulfate, percarbonate, periodic acid, 'high chlorine
  • the salt is preferably a potassium salt, a sodium salt or an ammonium salt.
  • the content of the oxidizing agent is preferably 0.05 to 10% by mass, more preferably 0.5 to 5% by mass.
  • the complexing agent may be a complexing agent conventionally used in the art, preferably selected from the group consisting of aminocarboxylates and a salt thereof, an organic carboxylic acid and a salt thereof, one or more of an organic phosphonic acid and a salt thereof, and a polyamine;
  • the aminocarboxy compound is a compound containing both an amino group and a carboxyl group, preferably glycine or alanine Acid, valine, leucine, valine, phenylalanine, tyrosine, tryptophan, lysine, arginine, histidine, serine, aspartic acid, glutamic acid, One or more of asparagine, glutamine, ammonia triacetic acid, ethylenediaminetetraacetic acid, cyclohexanetetraacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraamine hexaacetic acid, and ethylenediamine disuccinic acid
  • the polyamine is preferably diethylenetriamine, penta One or more of bisethylenetriamine, triethylenetetramine, tetraethylenepentamine, and polyethenepolyamine.
  • the salt is preferably a potassium salt, a sodium salt or an ammonium salt.
  • the content of the complexing agent is preferably 0.01 to 10% by mass, more preferably 0.05 to 5% by mass.
  • the present invention may further contain a corrosion inhibitor conventionally used in the art, and the corrosion inhibitor is preferably one or more of a azole, an imidazole, a thiazole, a pyridine, and a pyrimidine compound;
  • the compound is preferably selected from one or more of the following: benzotriazole, 5-methyl-1, 2,
  • 3-benzotriazole 5-carboxybenzotriazole, 1-hydroxy-benzotriazole, 1,2,4-triazole, 3-amino-1, 2,4-triazole 4-amino-1, 2,4-triazole, 3,5-diamino-1,2,4-triazole, 5-carboxy-3-amino-1, 2,4-triazole, 3-amino-5-mercapto-1, 2,4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazole, 5-amino-1H-tetrazole and 1-phenyl -5-fluorenyl-tetrazine; the imidazole compound is preferably benzimidazole and/or 2-mercaptobenzimidazole; the thiazole The compound is preferably selected from one or more of the following: 2-mercaptothiadiazole, 5-amino-2-mercapto-1,3,4-thiadiazole and 2-mercapto-benzothiazole; The pyridine compound
  • the polishing liquid has a pH of 2 to 11, preferably 3 to 7.
  • the polishing liquid of the present invention may further contain other conventional additives in the art such as a pH adjuster, a viscosity modifier, an antifoaming agent, a bactericide, and the like.
  • the polishing liquid of the present invention can be prepared by uniformly mixing the components other than the oxidizing agent, and adjusting the pH to a desired pH by a pH adjusting agent (such as KOH, ammonia or HNO 3 ) which is conventional in the art. Add oxidizing agent before use and mix well.
  • a pH adjusting agent such as KOH, ammonia or HNO 3
  • the reagents and starting materials used in the present invention are commercially available.
  • the positive progress of the invention is that: the polishing liquid of the invention can significantly improve the degree of dishing of the copper block after polishing under the condition of maintaining a high polishing rate, and the surface of the polished chip is non-corrosive, and the copper is significantly reduced at room temperature. And static corrosion rate at polishing temperatures.
  • Fig. 1 is a view showing the surface corrosion observed by SEM after polishing and immersing a patterned copper wafer with the polishing liquid of Example 54.
  • Fig. 2 is a view showing the surface corrosion observed by SEM after polishing and immersing the patterned copper wafer with the polishing liquid of Comparative Example 4. Summary of the invention
  • Table 1 shows Examples 1 to 49 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, the components other than the oxidizing agent were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO 3 . Add oxidizing agent before use and mix well. Examples 1 to 49
  • n 15000 methyl acrylate, hydroxyethyl acrylate
  • Mn 20000 methacrylic acid and diethylene
  • Mn 3000 butyl methacrylate, hydroxy acrylate
  • Mn 10000 propyl acrylate
  • n 6000 hydroxyethyl acrylate and acrylamide 0 2 benzotriamine triethylperoxy
  • Mn 30000 ethyl acrylate, polystyrene methacrylic acid hydroxy peroxygen
  • Mn 10000 propyl methacrylate and methacryl
  • Mn 5000 propyl methacrylate and methacryl
  • n 10000 methyl cellulose polysilicon antifoam
  • Table 2 shows the comparative polishing liquids 1 to 3 and the polishing liquids 50 to 53 of the present invention, according to the formula given in the table, the water is added to the mass percentage to 100%, and the components other than the oxidizing agent are uniformly mixed, using KOH or HN0 3 is adjusted to the desired pH. Add oxidizing agent before use and mix well.
  • the copper (Cu) wafer was polished using a comparative polishing liquid 1 to 3 and the polishing liquid 50 to 53 of the present invention, and the removal rate is shown in Table 3.
  • Polishing material Empty copper wafer; Polishing conditions: 3Psi under pressure, 70/80rpm for polishing disc and polishing head, PPG MX710 for polishing pad, 100ml/min for polishing liquid, and Logitech PM5 Polisher for polishing machine. Table 3 Comparison of removal rate of metallic copper by polishing solution 1 ⁇ 3 and polishing solution 50 ⁇ 53
  • Table 4 shows the comparative polishing liquid 4 and the polishing liquid 54 of the present invention. According to the formulation given in the table, the components other than the oxidizing agent are uniformly mixed, and the mass percentage is made up to 100% with water, and adjusted to KOH or HN0 3 to The pH required. Add oxidizing agent before use and mix well.
  • the copper (Cu), tantalum (Ta), silicon (Teos) wafers and the patterned copper wafer are polished using the comparative polishing liquid 4 and the polishing liquid 54 of the present invention.
  • Empty sheet polishing conditions Copper wafer: Down pressure 3Psi/lpsi; Tantalum (Ta) and silicon dioxide (Teos) Wafer: Lower pressure lpsi, polishing disc and polishing head speed 70/80 rpm, polishing pad PPG MX710, polishing solution flow rate 100 ml /min, the polishing machine is Logitech PM5 Polisher.
  • Patterned copper wafer polishing process conditions Under a 3 psi under pressure, the patterned copper wafer was polished to a residual copper of approximately 2000 A, and then the residual copper was removed and over 30 seconds at 1 psi. The depression of the 80 um*80 um copper block on the patterned copper wafer was measured using an XE-300P atomic force microscope. Polishing disc and polishing head speed 70/80 rpm, polishing pad PPG MX710, polishing liquid flow rate 100ml/min, polishing machine is Logitech PM5 Polisher.
  • the patterned copper wafer was polished and immersed using the polishing liquids of Comparative Example 4 and Example 54.
  • Polishing process conditions polishing disc and polishing head speed 70/80rpm, polishing pad PPG MX710, The polishing fluid flow rate was 100 ml/min, and the polishing machine was under a pressure of 3 psi under a Logitech PM5 Polisher o.
  • the patterned copper wafer was polished to a residual copper of about 2000 A, and then the residual copper was removed and spun for 30 seconds at 1 psi. After the polished copper wafer was immersed in the polishing liquid for 30 minutes, it was taken out and washed, and the surface of the wafer was observed for corrosion by a scanning electron microscope (SEM).
  • SEM scanning electron microscope
  • the copper wafer was immersed in a 50 Q C polishing solution using comparative polishing liquids 1 to 3 and the polishing liquids 50 to 53 of the present invention.
  • the static corrosion rate is shown in Table 6.
  • Table 6 Comparison of the static corrosion rate of the copper slurry at 50 Q C compared with the polishing liquid 1 ⁇ 3 and the polishing liquid 50 ⁇ 53
  • Table 7 shows the comparative polishing liquids 5 to 6 and the polishing liquid 55 of the present invention, according to the formulation given in the table, Mix the components other than the oxidizing agent evenly, make up the mass percentage to 100% with water, and adjust to the desired pH with KOH or HNO 3 . Add oxidizing agent before use and mix well.
  • the copper wafers were each immersed in a room temperature and 50 Q C polishing solution using comparative polishing liquids 5 to 6 and the polishing liquid 55 of the present invention. Static corrosion rate is shown in Table 8.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

L'invention concerne un liquide de polissage chimique-mécanique qui contient un polymère en étoile présentant un groupe d'affinité de pigment, des particules abrasives, un oxydant chélateur et de l'eau. Le liquide de polissage permet de réduire le bombage d'un bloc de cuivre poli et de prévenir la corrosion partielle ou intégrale du cuivre lorsqu'on maintient un taux d'élimination élevé de cuivre, par l'application du liquide de polissage de l'invention.
PCT/CN2009/001498 2008-12-19 2009-12-18 Liquide de polissage chimique-mécanique WO2010069149A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200980151466.9A CN102245724A (zh) 2008-12-19 2009-12-18 一种化学机械抛光液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200810207471.4 2008-12-19
CN200810207471 2008-12-19

Publications (1)

Publication Number Publication Date
WO2010069149A1 true WO2010069149A1 (fr) 2010-06-24

Family

ID=42268276

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2009/001498 WO2010069149A1 (fr) 2008-12-19 2009-12-18 Liquide de polissage chimique-mécanique

Country Status (2)

Country Link
CN (1) CN102245724A (fr)
WO (1) WO2010069149A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011060616A1 (fr) * 2009-11-20 2011-05-26 安集微电子（上海）有限公司 Liquide de polissage chimio-mécanique et son utilisation
WO2011069345A1 (fr) * 2009-12-11 2011-06-16 安集微电子（上海）有限公司 Pâte de polissage mécano-chimique et son utilisation
WO2011072492A1 (fr) * 2009-12-18 2011-06-23 安集微电子（上海）有限公司 Liquide de polissage mécano-chimique
US11898063B2 (en) * 2017-12-27 2024-02-13 Anji Microelectronics (Shanghai) Co., Ltd. Chemical-mechanical polishing solution

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法
KR20040060613A (ko) * 2002-12-30 2004-07-06 제일모직주식회사 구리배선 연마용 슬러리 조성물
CN1644640A (zh) * 2003-12-19 2005-07-27 Cmp罗姆和哈斯电子材料控股公司 用于铜的受控抛光的组合物和方法
CN1699444A (zh) * 2004-02-23 2005-11-23 Cmp罗姆和哈斯电子材料控股公司 用于控制半导体晶片中金属互连去除速率的抛光组合物
CN1919955A (zh) * 2005-08-24 2007-02-28 捷时雅株式会社 化学机械研磨用水性分散质、配制该分散质的工具、化学机械研磨方法及半导体装置的制造方法
CN101130668A (zh) * 2006-08-24 2008-02-27 福吉米股份有限公司 抛光用组合物和抛光方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1509322A (zh) * 2001-05-18 2004-06-30 �޵¶��عɹ�˾ 化学机械抛光组合物及其相关方法
KR20040060613A (ko) * 2002-12-30 2004-07-06 제일모직주식회사 구리배선 연마용 슬러리 조성물
CN1644640A (zh) * 2003-12-19 2005-07-27 Cmp罗姆和哈斯电子材料控股公司 用于铜的受控抛光的组合物和方法
CN1699444A (zh) * 2004-02-23 2005-11-23 Cmp罗姆和哈斯电子材料控股公司 用于控制半导体晶片中金属互连去除速率的抛光组合物
CN1919955A (zh) * 2005-08-24 2007-02-28 捷时雅株式会社 化学机械研磨用水性分散质、配制该分散质的工具、化学机械研磨方法及半导体装置的制造方法
CN101130668A (zh) * 2006-08-24 2008-02-27 福吉米股份有限公司 抛光用组合物和抛光方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011060616A1 (fr) * 2009-11-20 2011-05-26 安集微电子（上海）有限公司 Liquide de polissage chimio-mécanique et son utilisation
WO2011069345A1 (fr) * 2009-12-11 2011-06-16 安集微电子（上海）有限公司 Pâte de polissage mécano-chimique et son utilisation
WO2011072492A1 (fr) * 2009-12-18 2011-06-23 安集微电子（上海）有限公司 Liquide de polissage mécano-chimique
US11898063B2 (en) * 2017-12-27 2024-02-13 Anji Microelectronics (Shanghai) Co., Ltd. Chemical-mechanical polishing solution

Also Published As

Publication number Publication date
CN102245724A (zh) 2011-11-16

Similar Documents

Publication Publication Date Title
WO2011060616A1 (fr) Liquide de polissage chimio-mécanique et son utilisation
JP6023125B2 (ja) 化学的機械的研磨スラリー組成物およびそれを使用した銅のための方法およびシリコン貫通ビア適用
WO2011072494A1 (fr) Liquide de polissage mécano-chimique
WO2011069345A1 (fr) Pâte de polissage mécano-chimique et son utilisation
JP2009503910A (ja) 金属フィルム平坦化用高スループット化学機械研磨組成物
KR101144419B1 (ko) 금속-함유 기판의 화학 기계적 평탄화를 위한 방법 및 조성물
TW201723112A (zh) 金屬化學機械拋光漿料
WO2007077886A1 (fr) Liquide de polissage de metaux et procede de polissage d’un film a polir
TW201518492A (zh) 混合的磨料拋光組合物
WO2006052434A1 (fr) Composition cmp contenant des particules abrasives a surface modifiee
JP2005175437A (ja) Ｐｖｎｏを有する化学的機械的平坦化組成物および関連使用方法
WO2008025209A1 (fr) Pâte de polissage pour matériau faiblement diélectrique
TW201139634A (en) Aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method using same
WO2007009365A1 (fr) Liquide de polissage chimique mecanique
JP2007258451A (ja) 金属用研磨液
TWI635168B (zh) Chemical mechanical polishing slurry
CN102477262B (zh) 一种化学机械抛光浆料
WO2014089905A1 (fr) Boue de polissage chimico-mécanique de métal et ses utilisations
WO2019151145A1 (fr) Composition de polissage chimico-mécanique et procédé de polissage
WO2011072492A1 (fr) Liquide de polissage mécano-chimique
TW201621024A (zh) 組成物
WO2006042466A1 (fr) Systeme, procede et suspension abrasive pour polissage chimico-mecanique
WO2010069149A1 (fr) Liquide de polissage chimique-mécanique
TW200915411A (en) Polishing liquid and polishing method
JP5907333B2 (ja) 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980151466.9

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09832831

Country of ref document: EP

Kind code of ref document: A1

DPE1 Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101)
NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09832831

Country of ref document: EP

Kind code of ref document: A1