Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means

Definitions

• the present invention relates to a plasma processing apparatus.
• a plasma processing apparatus using microwaves has been used, for example, for film formation and etching. Furthermore, in a plasma processing apparatus using microwaves, a gas supply plate called a shower plate is disposed horizontally in a processing vessel to divide the inside of the processing vessel into an upper plasma generation space and a lower processing space.
• a gas supply plate called a shower plate is disposed horizontally in a processing vessel to divide the inside of the processing vessel into an upper plasma generation space and a lower processing space.
• the heat associated with the generation of plasma causes particularly high temperature in the central region of the shower plate. That is, the temperature distribution will be uneven over the entire surface of the shower plate.
• the material of the shower plate itself may be a metal having good thermal conductivity, such as aluminum.
• the shower plate has a large number of openings communicating the plasma generation space with the processing space. The opening is for passing the active species generated by the plasma, and is designed so that the area of the cross section of the shower plate is as small as possible. Therefore, the heat (transfer) resistance from the central area of the shower plate to the peripheral area makes it difficult to make the in-plane temperature of the shower plate uniform and to maintain the temperature of the single plate at a desired temperature. there were. [0007] If the in-plane temperature of the shower plate becomes uneven or can not be maintained at a desired temperature, the thermal stress increases to cause deformation and distortion of the shower plate. As a result, the shower plate itself may need to be replaced frequently, and in some cases even the uniformity of plasma processing may be hampered.
• the present invention has been made to solve the above problems and to solve them effectively. It is an object of the present invention to maintain the gas supply plate (shower plate) at a desired temperature, and to improve the in-plane temperature uniformity of the gas supply plate, whereby the gas can be improved. An object of the present invention is to provide a plasma processing apparatus capable of suppressing the occurrence of deformation and distortion of a supply plate.
• a processing container having a plasma generation space in which a processing gas is converted into plasma and a processing space in which a substrate is placed and the substrate is subjected to plasma processing, and a plasma generation space in the processing container.
• a gas supply plate (so-called shower plate) disposed in a processing vessel to divide the processing space into a processing space, a processing gas supply hole for supplying a processing gas toward the processing space provided in the gas supply plate, a gas supply plate
• the thermal conductivity is more than that of the material that constitutes the gas supply plate, which has a plurality of openings that communicate the plasma generation space and the processing space, and the gas supply plate extends from the central region of the gas supply plate to the peripheral region. It is a plasma processing apparatus characterized by having high heat conductivity and heat transfer members.
• the heat conductivity is higher than the material of the gas supply plate, and the heat transfer member is extended from the central region of the gas supply plate to the peripheral region (span).
• the heat transfer between the central area of the feed plate and the peripheral area is significantly improved over the prior art.
• the temperature of the gas supply plate can be maintained at a desired temperature, and the uniformity of the in-plane temperature distribution of the gas supply plate is also improved. This can suppress the occurrence of deformation and distortion of the gas supply plate during processing.
• the heat transfer member is provided inside the gas supply plate.
• the region facing the substrate in the gas supply plate has a shape in which the vertical beam members and the horizontal beam members are arranged in a grid
• at least a part of the heat transfer member Is preferably provided inside the longitudinal beam member or the lateral beam member.
• the gas supply It is preferable that (a part of) the flow path of the processing gas in the plate is also provided inside the vertical beam member or the horizontal beam member.
• the gas supply plate is further provided with a gas supply hole for supplying a plasma generation gas (gas for plasma excitation) toward the plasma generation space.
• a plasma generation gas gas for plasma excitation
• the gas supply plate is It is preferable that the flow path (part of the flow path) of the gas for plasma generation is also provided inside the vertical beam member or the horizontal beam member.
• the flow path of the processing gas and the flow path of the plasma generation gas are disposed so as to overlap in the vertical direction of the gas supply plate. In this case, even if two flow paths are formed, the area of the plurality of openings communicating the plasma generation space and the processing space is not affected. Furthermore, at least a part of the heat transfer member is preferably disposed between the flow path of the processing gas and the flow path of the plasma generation gas.
• a heat medium flow path for performing heat exchange with the heat transfer member in the peripheral region of the gas supply plate is provided.
• the temperature of the entire gas supply plate can be easily maintained at a desired temperature based on the heat medium flowing through the heat medium flow path, and uniform temperature control of the entire gas supply plate is facilitated.
• thermoelectric transfer member for example, a heat pipe can be mentioned.
• FIG. 1 is a schematic longitudinal sectional view showing the configuration of a plasma processing apparatus according to an embodiment of the present invention.
• FIG. 2 is a plan view of a shower plate of the plasma processing apparatus of FIG.
• FIG. 3 is a longitudinal cross-sectional view of a cross beam member of the shower plate of FIG.
• FIG. 4 is a plan view for explaining the positional relationship between the vertical beam members and the horizontal beam members of the shower plate of FIG.
• FIG. 5 is a sectional view taken along the line A-A of FIG.
• FIG. 6 is a graph showing an in-plane temperature distribution of a shower plate according to the present embodiment and a conventional shower plate.
• Figure 7 shows the temperature change over time for a conventional shower plate It is a graph.
• FIG. 8 is a graph showing a temperature change with the passage of time for a shower plate in the present embodiment.
• FIG. 1 is a schematic longitudinal sectional view showing the configuration of a plasma processing apparatus 1 according to an embodiment of the present invention.
• the plasma processing apparatus 1 includes a bottomed cylindrical processing vessel 2 whose upper portion is open.
• the processing vessel 2 is, for example, also aluminum power and is grounded.
• a susceptor 3 is provided as a mounting table for mounting, for example, a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate.
• the susceptor 3 is made of, for example, aluminum.
• a heater 5 that generates heat by the supply of power from the external power supply 4 is provided. By this, it is possible to heat the wafer W on the susceptor 3 to a predetermined temperature.
• an exhaust pipe 12 for exhausting the atmosphere in the processing container 2 by an exhaust device 11 such as a vacuum pump is provided.
• a transmission window 22 which is also made of, for example, a quartz member of a dielectric, is provided via a sealing material 21 such as an O-ring for securing air tightness.
• the transmission window 22 of the present embodiment is circular in plan view.
• another dielectric material for example, ceramics such as Al 2 O 3 or A1N may be used.
• a planar antenna member for example, a disk-like radial line slot antenna 23 is provided above the transmission window 22 .
• the radial line slot antenna 23 is a thin circular plate of copper coated or coated with a conductive material such as Ag, Au or the like.
• the radial line slot antenna 23 is formed to be aligned in a large number of slits 24, for example, in a spiral or concentric circle.
• a wave retarding plate 25 for shortening the wavelength of the microwave described later is disposed on the top surface of the radial line slot antenna 23, a wave retarding plate 25 for shortening the wavelength of the microwave described later is disposed.
• the wave retardation plate 25 is covered by a conductive cover 26.
• the cover 26 is provided with an annular heat medium passage 27.
• the heat medium flowing through the heat medium flow path 27 enables the cover 26 and the transmission window 22 to be maintained at a predetermined temperature.
• annular heat medium flow passage 28 Is formed in the side wall of the processing vessel 2 near the outer peripheral edge of the transmission window 22, an annular heat medium flow passage 28 is formed.
• a coaxial waveguide 29 is connected to the cover 26.
• the coaxial waveguide 29 is composed of an inner conductor 29a and an outer tube 29b.
• the inner conductor 29 a is connected to the radial line slot antenna 23.
• the end on the radial line slot antenna 23 side of the inner conductor 29a has a conical shape, so that microphone waves can be efficiently propagated to the radial line slot antenna 23.
• 2.45 GHz microwaves generated by the microwave supply device 31 have rectangular waveguides 32, mode converters 33, coaxial waveguides 29, retardation plates 25 and radial line slot antennas 23
• the light is emitted to the transmission window 22 via the light.
• An electric field is formed on the lower surface of the transmission window 22 by the microwave energy at that time, and the gas in the plasma generation space P is converted to plasma.
• a shower plate 41 as a gas supply plate is disposed horizontally.
• the inside of the processing container 2 is divided into the upper plasma generation space P and the lower processing space S.
• the shower plate 41 has a substantially disk shape, and a plurality of vertical beam members 42 and a plurality of cross beam members 43 are formed in the region facing the beam W on the susceptor 3. It has a shape arranged in a lattice. An annular member 44 is provided outside them. The material of each of these members is aluminum. A plurality of rectangular openings 45 are created by the vertical beam members 42 and the horizontal beam members 43. The opening 45 communicates the plasma generation space P with the lower processing space S.
• a gas flow passage 51 through which a gas for plasma excitation flows is formed on the side of the plasma generation space P inside the vertical beam member 42 and the horizontal beam member 43.
• the gas flow passage 51 is connected to a gas supply source 56 for plasma excitation through a gas supply pipe 52, a nozzle 53, a mass flow controller 54 and a valve 55.
• a gas for plasma excitation flowing through the gas flow path 51 is uniformly supplied toward the plasma generation space P on the plasma generation space P side of the vertical beam member 42 and the horizontal beam member 43.
• a plurality of gas supply holes 57 are formed.
• a processing gas flow path 61 is formed in which the processing gas flows.
• the processing gas flow path 61 communicates with the processing gas supply source 66 through the processing gas supply pipe 62, the nozzle 63, the mass flow controller 64 and the valve 65, as shown in FIG. Then, as shown in FIG. 3, on the processing space S side of the vertical beam member 42 and the horizontal beam member 43, a plurality of processing gases flowing through the processing gas channel 61 are uniformly supplied toward the processing space S.
• a processing gas supply hole 67 is formed.
• a heat pipe 71 is provided inside the vertical beam member 42 and the horizontal beam member 43.
• the heat pipe has a hollow cylindrical shape, and water is enclosed therein as a heat medium.
• various heat pipe liquids are sealed.
• the heat conductivity of the heat pipe 71 having such a configuration is extremely high as compared with aluminum which is a constituent material of the shower plate 41.
• the heat pipe 71 is provided inside the longitudinal beam member 42 and the lateral beam member 43 so that the central region force of the shower plate 41 also extends to the peripheral region. The arrangement situation will be described in detail below.
• the longitudinal beam member 42c passing through the center of the shower plate 41 has a length substantially corresponding to the radius of the shower plate 41 so as to face each other from both outer ends thereof.
• Heat pipes 71, 71 are inserted inside.
• the heat pipes 71, 71 having a length corresponding to the radius of the shower plate 41 are provided inside so as to face from both outer ends thereof. It is inserted.
• the so-called first quadrant the upper right quadrant of the shower plate 41 in FIGS. 2 and 4.
• the outer end force is also inserted into the inside of the vertical beam member 42.
• the so-called second quadrant the upper left quadrant of shower plate 41 in FIG. 2, FIG. 4
• the fourth quadrant FIG. 2, the lower right quadrant of shower plate 41 in FIG. 4
• Inside the crosspiece 43 from its outer end Tip 71 is inserted.
• the outer ends of the heat pipes 71 all extend to the outer end of the shower plate 41. In this manner, the heat pipes 71 are arranged almost equally in the grid area of the shower plate 41.
• annular portion 44 of the shower plate 41 is supported by the side wall of the processing vessel 2.
• An annular heat medium flow passage 81 is provided at a position on the upper side of the annular portion 44 of the shower plate 41 in the side wall of the processing vessel 2. Heat exchange is performed between the heat medium flowing through the heat medium flow passage 81 and (the peripheral portion of) the heat pipe 71.
• the heat medium flowing in the heat medium flow path 81 and the heat medium flowing in the heat medium flow paths 27 and 28 described above are supplied from the same heat medium supply source 82 in the present embodiment.
• independent heat medium sources eg, chiller etc.
• annular heater 83 may be provided on the inner lower surface of the annular portion 44.
• the uniformity of the in-plane temperature of the shower plate is poor as described above. It is highly preferred to provide a heater 83 in order to bring the temperature of the central region to the temperature of the central region.
• the heater 83 may not be provided.
• the plasma processing apparatus 1 of the present embodiment is configured as described above.
• a gas for plasma excitation is directed from the gas supply hole 57 of the shower plate 41 to the plasma generation space P.
• argon gas is supplied.
• the microwave supply device 31 is operated.
• an electric field is generated on the lower surface side of the transmission window 22, the gas for plasma excitation is converted to plasma, and the plasma passes through the opening 45 of the shower plate 41. Flows into the processing space S.
• the processing gas for film formation is supplied from the processing gas supply hole 67 on the lower surface of the shower plate 41 toward the processing space S, the processing gas is dissociated by the plasma, and the active species generated at that time. Thus, the film formation process is performed on the wafer W.
• the heat associated with the plasma causes the temperature of the central region of the shower plate 41 to rise.
• the heat pipe 71 is provided so as to straddle the central region and the peripheral region (including the annular portion 44 in the present embodiment) in the shower plate 41.
• the heat in the central area of plate 41 is rapidly transferred to the peripheral area (ring 44) of shower plate 41. Therefore, the temperature of the shower plate 41 is made uniform as a whole.
• the heat pipes 71 are disposed substantially equally in the longitudinal beam members 42 and the transverse beam members 43 arranged in a lattice shape. Thereby, the temperature uniformity of the entire shower plate 41 is further improved.
• the heat medium channel 81 is provided above the annular portion 44, and heat is generated between the end of the heat pipe 71 and the heat medium of the heat medium channel 81. Since the heat medium is used as a kind of constant temperature source, it is possible to maintain the shower plate 41 at a desired temperature since the exchange takes place.
• the heat pipe 71 is adopted as the heat transfer member, it is easy to handle, and no external energy source such as a power source or a power source is required.
• the heat of the heat medium is given to the shower plate 41 through the heat pipe 71.
• heat is applied to the heat medium through the heat S heat pipe 71 of the shower plate 41. That is, in either state, the shower plate 41 can maintain a constant temperature.
• the temperature control by the conventional heater which does not depend on the heat medium, the heater plate can be controlled to a constant temperature by the heater during idling, but the temperature power S of the shower plate is further increased during plasma processing. It will For this reason, the power supply for the heater and the controller thereof require a mechanism for cooling the shower plate, which complicates the apparatus and makes its control difficult. It becomes.
• the gas flow channel 51, the heat pipe 71, and the processing gas flow channel 61 are vertically arranged. Because they are arranged to overlap, the size of the opening 45 is not affected.
• the distance from the center to the outer edge of the shower plate is taken on the horizontal axis, and the measured temperature is taken on the vertical axis.
• the processing conditions of the plasma processing are as follows: the pressure in the processing vessel 2 is 500 mTorr, the microwave power is 3 kW, the flow rate of argon gas for excitation is 17 OO sccm, and the temperature of the heat medium flowing in the heat medium channel 81 was 80 ° C., and the temperature of the heater 83 was 80 ° C.
• FIG. 7 shows temperature change with time after plasma (generation) ON, with respect to three positions of the conventional shower plate having no heat transfer member.
• FIG. 8 shows the temperature change with the lapse of time after the plasma (generation) is turned on, with regard to the three positions of the shower plate 41 employed in the plasma apparatus 1 according to the present embodiment. .
• the plasma (generation) was turned off after 15 minutes.
• “shower 1” is an edge (position 150 mm from the center)
• “shower 2” is intermediate (position 100 mm from the center)
• “shower 3” "Means the center (Om from the center).
• the pressure in the processing vessel 2 is 666.
• the microwave power is 3 kW, and the flow rate of argon gas for excitation is 17 OO sccm.
• the temperature is maintained at the desired temperature, and the in-plane temperature is also substantially maintained. It turns out that it is uniform. Therefore, it is possible that the thermal stress applied to the shower plate 41 is suppressed much more than before, and the deformation and distortion thereof are significantly reduced. It is also understood that the force in this embodiment is superior not only to the in-plane temperature uniformity but also to the temperature response as compared with the prior art. That is, in the conventional type (FIG. 7), the temperature continues to rise until 15 minutes after the plasma is turned on (until it is turned off), whereas in the present embodiment (FIG. 8), the plasma is turned on After 5 minutes, the temperature is already stable. This is also true after turning off the plasma.
• the stability with less variation in conditions during the process is improved compared to the prior art. That is, for example, when processing a plurality of substrates in succession, the difference between the processing results between the first substrate after the start of processing and the subsequent substrates (processed after the temperature is stabilized). There is no In addition, even if processing for a long time is required for one substrate, the temperature fluctuation of the shower plate is small, and the state of gas adsorption and desorption on the shower plate does not fluctuate, which is more stable. Processing becomes possible. In addition, since the temperature response is good as described above, the time to start processing can be shortened compared to the conventional method.
• the present invention is not limited to this, and can be applied to plasma processing apparatuses using other plasma sources. .

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• 2005
  • 2005-05-17 JP JP2005143674A patent/JP4664119B2/ja not_active Expired - Fee Related
• 2006
  • 2006-04-27 WO PCT/JP2006/308874 patent/WO2006123526A1/ja not_active Ceased
  • 2006-04-27 CN CNA2006800246113A patent/CN101218860A/zh active Pending
  • 2006-04-27 KR KR1020077029248A patent/KR100980519B1/ko not_active Expired - Fee Related
  • 2006-04-27 US US11/920,343 patent/US20090065147A1/en not_active Abandoned
  • 2006-04-27 CN CN2010105432696A patent/CN101982563A/zh active Pending
  • 2006-05-16 TW TW095117352A patent/TWI389169B/zh not_active IP Right Cessation

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