JP4664119B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP4664119B2
JP4664119B2 JP2005143674A JP2005143674A JP4664119B2 JP 4664119 B2 JP4664119 B2 JP 4664119B2 JP 2005143674 A JP2005143674 A JP 2005143674A JP 2005143674 A JP2005143674 A JP 2005143674A JP 4664119 B2 JP4664119 B2 JP 4664119B2
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JP
Japan
Prior art keywords
gas supply
plasma
processing
gas
supply plate
Prior art date
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Expired - Fee Related
Application number
JP2005143674A
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English (en)
Japanese (ja)
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JP2006324023A (ja
JP2006324023A5 (https=
Inventor
治 森田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2005143674A priority Critical patent/JP4664119B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to CNA2006800246113A priority patent/CN101218860A/zh
Priority to CN2010105432696A priority patent/CN101982563A/zh
Priority to PCT/JP2006/308874 priority patent/WO2006123526A1/ja
Priority to KR1020077029248A priority patent/KR100980519B1/ko
Priority to US11/920,343 priority patent/US20090065147A1/en
Priority to TW095117352A priority patent/TWI389169B/zh
Publication of JP2006324023A publication Critical patent/JP2006324023A/ja
Publication of JP2006324023A5 publication Critical patent/JP2006324023A5/ja
Application granted granted Critical
Publication of JP4664119B2 publication Critical patent/JP4664119B2/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2005143674A 2005-05-17 2005-05-17 プラズマ処理装置 Expired - Fee Related JP4664119B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2005143674A JP4664119B2 (ja) 2005-05-17 2005-05-17 プラズマ処理装置
CN2010105432696A CN101982563A (zh) 2005-05-17 2006-04-27 等离子体处理装置
PCT/JP2006/308874 WO2006123526A1 (ja) 2005-05-17 2006-04-27 プラズマ処理装置
KR1020077029248A KR100980519B1 (ko) 2005-05-17 2006-04-27 플라즈마 처리 장치
CNA2006800246113A CN101218860A (zh) 2005-05-17 2006-04-27 等离子体处理装置
US11/920,343 US20090065147A1 (en) 2005-05-17 2006-04-27 Plasma processing apparatus
TW095117352A TWI389169B (zh) 2005-05-17 2006-05-16 Plasma processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005143674A JP4664119B2 (ja) 2005-05-17 2005-05-17 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2006324023A JP2006324023A (ja) 2006-11-30
JP2006324023A5 JP2006324023A5 (https=) 2007-09-06
JP4664119B2 true JP4664119B2 (ja) 2011-04-06

Family

ID=37431104

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005143674A Expired - Fee Related JP4664119B2 (ja) 2005-05-17 2005-05-17 プラズマ処理装置

Country Status (6)

Country Link
US (1) US20090065147A1 (https=)
JP (1) JP4664119B2 (https=)
KR (1) KR100980519B1 (https=)
CN (2) CN101218860A (https=)
TW (1) TWI389169B (https=)
WO (1) WO2006123526A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008262968A (ja) * 2007-04-10 2008-10-30 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
US8021975B2 (en) 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
WO2009119285A1 (ja) * 2008-03-24 2009-10-01 東京エレクトロン株式会社 シャワープレートとこれを用いたプラズマ処理装置
JP5222040B2 (ja) * 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2011034057A1 (ja) 2009-09-17 2011-03-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
JP5566389B2 (ja) * 2009-09-25 2014-08-06 京セラ株式会社 堆積膜形成装置および堆積膜形成方法
US20130023062A1 (en) * 2009-12-11 2013-01-24 Takeshi Masuda Thin film manufacturing apparatus, thin film manufacturing method and method for manufacturing semiconductor device
JP5941653B2 (ja) * 2011-02-24 2016-06-29 東京エレクトロン株式会社 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置
KR101295794B1 (ko) * 2011-05-31 2013-08-09 세메스 주식회사 기판 처리 장치
US20130284092A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Faceplate having regions of differing emissivity
CN104264129B (zh) * 2014-10-20 2016-09-28 佛山市中山大学研究院 一种mocvd设备的进气装置及mocvd设备
JP6764771B2 (ja) * 2016-11-28 2020-10-07 東京エレクトロン株式会社 基板処理装置及び遮熱板
KR102096700B1 (ko) 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7035581B2 (ja) 2017-03-29 2022-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法。
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR102204883B1 (ko) * 2019-05-09 2021-01-19 세메스 주식회사 기판 처리 장치

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0354498A (ja) * 1989-07-24 1991-03-08 Hitachi Ltd 高熱負荷受熱板
JP3100236B2 (ja) * 1992-08-03 2000-10-16 東京エレクトロン株式会社 プラズマ処理装置
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
JPH07180061A (ja) * 1993-12-22 1995-07-18 Canon Inc マイクロ波プラズマｃｖｄ法および装置
EP1189493A3 (en) * 1997-05-22 2004-06-23 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
JPH11326566A (ja) * 1998-05-20 1999-11-26 Mitsubishi Heavy Ind Ltd 核融合装置高熱負荷構造
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
JP2939547B1 (ja) * 1998-09-02 1999-08-25 核融合科学研究所長 アーマタイル・ヒートシンク一体型除熱装置
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
EP1115147A4 (en) * 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
KR100434487B1 (ko) * 2001-01-17 2004-06-05 삼성전자주식회사 샤워 헤드 및 이를 포함하는 박막 형성 장비
JP4713747B2 (ja) * 2001-01-19 2011-06-29 キヤノンアネルバ株式会社 薄膜形成装置
JP2002270599A (ja) * 2001-03-13 2002-09-20 Canon Inc プラズマ処理装置
EP1804274A3 (en) * 2001-03-28 2007-07-18 Tadahiro Ohmi Plasma processing apparatus
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
JP3991315B2 (ja) * 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP4369264B2 (ja) * 2003-03-25 2009-11-18 東京エレクトロン株式会社 プラズマ成膜方法
JP4221526B2 (ja) * 2003-03-26 2009-02-12 キヤノンアネルバ株式会社 金属酸化物を基板表面上に形成する成膜方法
US7078341B2 (en) * 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors

Also Published As

Publication number Publication date
JP2006324023A (ja) 2006-11-30
CN101218860A (zh) 2008-07-09
KR100980519B1 (ko) 2010-09-06
TWI389169B (zh) 2013-03-11
KR20080017361A (ko) 2008-02-26
WO2006123526A1 (ja) 2006-11-23
US20090065147A1 (en) 2009-03-12
TW200705515A (en) 2007-02-01
CN101982563A (zh) 2011-03-02

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