KR100980519B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR100980519B1
KR100980519B1 KR1020077029248A KR20077029248A KR100980519B1 KR 100980519 B1 KR100980519 B1 KR 100980519B1 KR 1020077029248 A KR1020077029248 A KR 1020077029248A KR 20077029248 A KR20077029248 A KR 20077029248A KR 100980519 B1 KR100980519 B1 KR 100980519B1
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South Korea
Prior art keywords
gas supply
plasma
heat transfer
processing
gas
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KR1020077029248A
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English (en)
Korean (ko)
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KR20080017361A (ko
Inventor
오사무 모리타
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도쿄엘렉트론가부시키가이샤
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Publication of KR20080017361A publication Critical patent/KR20080017361A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020077029248A 2005-05-17 2006-04-27 플라즈마 처리 장치 Expired - Fee Related KR100980519B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00143674 2005-05-17
JP2005143674A JP4664119B2 (ja) 2005-05-17 2005-05-17 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20080017361A KR20080017361A (ko) 2008-02-26
KR100980519B1 true KR100980519B1 (ko) 2010-09-06

Family

ID=37431104

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077029248A Expired - Fee Related KR100980519B1 (ko) 2005-05-17 2006-04-27 플라즈마 처리 장치

Country Status (6)

Country Link
US (1) US20090065147A1 (https=)
JP (1) JP4664119B2 (https=)
KR (1) KR100980519B1 (https=)
CN (2) CN101218860A (https=)
TW (1) TWI389169B (https=)
WO (1) WO2006123526A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180060987A (ko) * 2016-11-28 2018-06-07 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 차열판

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008262968A (ja) * 2007-04-10 2008-10-30 Tokyo Electron Ltd プラズマ処理装置およびプラズマ処理方法
US8021975B2 (en) 2007-07-24 2011-09-20 Tokyo Electron Limited Plasma processing method for forming a film and an electronic component manufactured by the method
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
WO2009119285A1 (ja) * 2008-03-24 2009-10-01 東京エレクトロン株式会社 シャワープレートとこれを用いたプラズマ処理装置
JP5222040B2 (ja) * 2008-06-25 2013-06-26 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
WO2011034057A1 (ja) 2009-09-17 2011-03-24 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置用ガス供給機構
JP5566389B2 (ja) * 2009-09-25 2014-08-06 京セラ株式会社 堆積膜形成装置および堆積膜形成方法
US20130023062A1 (en) * 2009-12-11 2013-01-24 Takeshi Masuda Thin film manufacturing apparatus, thin film manufacturing method and method for manufacturing semiconductor device
JP5941653B2 (ja) * 2011-02-24 2016-06-29 東京エレクトロン株式会社 シリコン窒化膜の成膜方法及びシリコン窒化膜の成膜装置
KR101295794B1 (ko) * 2011-05-31 2013-08-09 세메스 주식회사 기판 처리 장치
US20130284092A1 (en) * 2012-04-25 2013-10-31 Applied Materials, Inc. Faceplate having regions of differing emissivity
CN104264129B (zh) * 2014-10-20 2016-09-28 佛山市中山大学研究院 一种mocvd设备的进气装置及mocvd设备
KR102096700B1 (ko) 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
JP7035581B2 (ja) 2017-03-29 2022-03-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法。
JP7008497B2 (ja) * 2017-12-22 2022-01-25 東京エレクトロン株式会社 基板処理装置および温度制御方法
KR102204883B1 (ko) * 2019-05-09 2021-01-19 세메스 주식회사 기판 처리 장치

Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2002212736A (ja) * 2001-01-19 2002-07-31 Anelva Corp 薄膜形成装置
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
JP2004311975A (ja) 2003-03-25 2004-11-04 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置

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JPH0354498A (ja) * 1989-07-24 1991-03-08 Hitachi Ltd 高熱負荷受熱板
JP3100236B2 (ja) * 1992-08-03 2000-10-16 東京エレクトロン株式会社 プラズマ処理装置
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US5647911A (en) * 1993-12-14 1997-07-15 Sony Corporation Gas diffuser plate assembly and RF electrode
JPH07180061A (ja) * 1993-12-22 1995-07-18 Canon Inc マイクロ波プラズマｃｖｄ法および装置
EP1189493A3 (en) * 1997-05-22 2004-06-23 Canon Kabushiki Kaisha Plasma processing apparatus provided with microwave applicator having annular waveguide and processing method
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
JPH11326566A (ja) * 1998-05-20 1999-11-26 Mitsubishi Heavy Ind Ltd 核融合装置高熱負荷構造
US6232248B1 (en) * 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
JP2939547B1 (ja) * 1998-09-02 1999-08-25 核融合科学研究所長 アーマタイル・ヒートシンク一体型除熱装置
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
EP1115147A4 (en) * 1999-05-26 2007-05-02 Tadahiro Ohmi DEVICE FOR PLASMA TREATMENT
KR100434487B1 (ko) * 2001-01-17 2004-06-05 삼성전자주식회사 샤워 헤드 및 이를 포함하는 박막 형성 장비
JP2002270599A (ja) * 2001-03-13 2002-09-20 Canon Inc プラズマ処理装置
EP1804274A3 (en) * 2001-03-28 2007-07-18 Tadahiro Ohmi Plasma processing apparatus
JP4402860B2 (ja) * 2001-03-28 2010-01-20 忠弘 大見 プラズマ処理装置
TW573053B (en) * 2001-09-10 2004-01-21 Anelva Corp Surface processing apparatus
JP3991315B2 (ja) * 2002-09-17 2007-10-17 キヤノンアネルバ株式会社 薄膜形成装置及び方法
JP4221526B2 (ja) * 2003-03-26 2009-02-12 キヤノンアネルバ株式会社 金属酸化物を基板表面上に形成する成膜方法
US7078341B2 (en) * 2003-09-30 2006-07-18 Tokyo Electron Limited Method of depositing metal layers from metal-carbonyl precursors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
JP2002212736A (ja) * 2001-01-19 2002-07-31 Anelva Corp 薄膜形成装置
JP2004311975A (ja) 2003-03-25 2004-11-04 Tokyo Electron Ltd プラズマ成膜方法及びプラズマ成膜装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180060987A (ko) * 2016-11-28 2018-06-07 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 차열판
KR102032617B1 (ko) * 2016-11-28 2019-10-15 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 차열판

Also Published As

Publication number Publication date
JP2006324023A (ja) 2006-11-30
CN101218860A (zh) 2008-07-09
TWI389169B (zh) 2013-03-11
KR20080017361A (ko) 2008-02-26
WO2006123526A1 (ja) 2006-11-23
US20090065147A1 (en) 2009-03-12
TW200705515A (en) 2007-02-01
CN101982563A (zh) 2011-03-02
JP4664119B2 (ja) 2011-04-06

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