WO2006118192A1 - 圧電部品及びその製造方法 - Google Patents
圧電部品及びその製造方法 Download PDFInfo
- Publication number
- WO2006118192A1 WO2006118192A1 PCT/JP2006/308832 JP2006308832W WO2006118192A1 WO 2006118192 A1 WO2006118192 A1 WO 2006118192A1 JP 2006308832 W JP2006308832 W JP 2006308832W WO 2006118192 A1 WO2006118192 A1 WO 2006118192A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- piezoelectric
- electrode
- substrate
- pair
- electrodes
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 238000000034 method Methods 0.000 title claims description 28
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 238000007789 sealing Methods 0.000 claims abstract description 112
- 239000011347 resin Substances 0.000 claims abstract description 59
- 229920005989 resin Polymers 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000011247 coating layer Substances 0.000 claims abstract description 40
- 239000003990 capacitor Substances 0.000 claims description 37
- 230000000007 visual effect Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000002834 transmittance Methods 0.000 description 10
- 238000011179 visual inspection Methods 0.000 description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000004519 grease Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 238000007650 screen-printing Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910002113 barium titanate Inorganic materials 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000011231 conductive filler Substances 0.000 description 3
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 3
- 239000002270 dispersing agent Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000005357 flat glass Substances 0.000 description 3
- 239000003365 glass fiber Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910002112 ferroelectric ceramic material Inorganic materials 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- 229910003251 Na K Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/177—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
- H03H9/0561—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
Definitions
- the present invention relates to a piezoelectric component that is easy to manufacture and excellent in reliability, and a manufacturing method thereof.
- microcomputers have been used for communication devices and electronic devices, and piezoelectric components incorporating piezoelectric vibration elements have been widely used as clock sources for such microcomputers.
- a piezoelectric component there is known one in which a vibrating electrode is formed on both main surfaces of a piezoelectric substrate, and a sealing space for securing a space in which the vibrating electrode vibrates is formed on each upper part.
- the sealing space is not airtight, moisture in the air, flux during soldering, etc. may enter the sealing space, resulting in deterioration of the electrical characteristics of the piezoelectric component.
- the conventional piezoelectric component has a problem in that it is impossible to visually confirm the inside of the region sealed by the sealing substrate.
- Patent Document 1 Japanese Patent Laid-Open No. 59-110217 (Fig. 5)
- the piezoelectric component proposed in Patent Document 1 uses a plate glass for the sealing substrate, and therefore cracks in the sealing substrate due to external force, mechanical or thermal shock. And / or cracks are likely to occur!
- the plate glass is inferior in workability and mechanical strength, there has been a problem that the thickness of the sealing substrate cannot be reduced!
- Recent communication devices and electronic devices are becoming smaller and thinner, and the demand for smaller and thinner components mounted on these devices is increasing.
- shock resistance is also applied to components mounted on these devices in order to improve the strength against dropping impacts. There is a strong demand for improved sex.
- An object of the present invention is to provide a piezoelectric component that can be thinned and has excellent impact resistance.
- Another object of the present invention is to provide a method for manufacturing a piezoelectric component that makes it easy to confirm the performance of the sealed space by visual recognition and can stably obtain the piezoelectric component of the present invention. It is in.
- the piezoelectric component of the present invention includes a piezoelectric vibration element in which a pair of electrodes that are at least partially opposed to each other via the piezoelectric substrate are formed on both main surfaces of the piezoelectric substrate, and the direction of the pair of electrodes A pair of frames respectively disposed on both main surfaces of the piezoelectric substrate so as to surround a region to be formed, and a pair of translucent grease materials and disposed so as to cover both outer surfaces of the pair of frames And a pair of input / output terminal electrodes respectively connected to the pair of electrodes.
- V ⁇ piezoelectric parts can be obtained.
- the sealing substrate is made of a resin material, and has excellent workability with respect to glass and ceramics. Therefore, it is easy to make the sealing substrate thinner, whereby a thin piezoelectric component can be obtained.
- the sealing substrate is made of a resin material and the sealing substrate is superior in elasticity and toughness to glass and ceramics, the sealing substrate itself has a strength against thermal and mechanical shock. Since the sealing substrate absorbs and relaxes external forces and impacts and protects the piezoelectric substrate, the piezoelectric component can be made highly reliable.
- the piezoelectric component of the present invention when the pair of frames in the above configuration are made of a translucent resin material cover, the piezoelectric substrate, the frame body, and the sealing substrate It is easy to visually check whether there are continuous bubbles that reduce the airtightness of the configured sealing space inside the frame body or at the interface between the frame body and the piezoelectric substrate by visual inspection. This makes it possible to check the piezoelectric components with higher reliability.
- a coating layer made of a light-shielding resin material cover is formed on at least one outer surface of the pair of sealing substrates.
- the sealing substrate also has a light-transmitting resin material power by being marked on the coating layer made of a light-shielding resin material.
- the coating layer is formed only in the region to which the mark is applied, the coating layer is formed in a limited region, so that when the dicing is performed, the notch applied to the main surface of the piezoelectric substrate is applied. As a mark, dicing can be performed, and a piezoelectric component that is easy to manufacture and excellent in reliability can be obtained.
- the pair of electrodes includes a vibrating electrode facing each other through the piezoelectric substrate, a lead electrode for connecting the vibrating electrode to the input / output terminal electrode, and the piezoelectric substrate from the vibrating electrode or the lead electrode. If it is composed of a capacitor electrode that extends toward the ground terminal electrode formed on the side surface of the substrate and forms a capacitor with the ground terminal electrode, the capacitor is formed between the capacitor electrode and the ground terminal electrode. Capacity can be used as a load capacity in an oscillation circuit configured using this piezoelectric component, so that a capacitive element for forming a separate load capacity is not required. Built-in Thus, a small piezoelectric component can be obtained.
- a dielectric substrate and at least one of the inside and the surface of the dielectric substrate are formed on at least one outer surface of the pair of sealing substrates, and the pair of input / output terminal electrodes are respectively formed.
- a pair of hot-side capacitor electrodes connected to each other, and a ground-side capacitor that is formed on at least one of the inside and the surface of the dielectric substrate and connected to the ground terminal electrode, and forms a capacitor between the hot-side capacitor electrode If a capacitive element consisting of an electrode is attached, a large capacitance formed between a hot-side capacitive electrode and a ground-side capacitive electrode facing each other through a dielectric substrate can be used with this piezoelectric component. It can be used as a load capacity in the configured oscillation circuit, and can be a small piezoelectric component incorporating a piezoelectric vibration element and a large load capacity.
- the method for manufacturing a piezoelectric component according to the present invention includes a step of preparing a piezoelectric mother substrate having electrodes formed on both main surfaces and having a plurality of element regions each serving as a piezoelectric vibration element, and both the piezoelectric mother substrates.
- a sealing mother substrate made of a light-transmitting resin material is attached on one main surface side so as to cover the lattice body, and the piezoelectric mother substrate and the frame body portion of the lattice body and the sealing member are attached.
- the appearance of the formation state of the sealing space and the presence or absence of continuous bubbles in the lattice body that reduce the hermeticity of the sealing space are determined by appearance inspection. As a result, defective products can be removed during the manufacturing process, so that highly reliable piezoelectric parts can be efficiently manufactured.
- a coating layer made of a light-shielding resin is formed on the outer surface of the sealing mother substrate, and a mark is applied to the coating layer.
- a mark is applied to a sealing substrate that also has a resin material strength, it becomes possible to improve the visibility of the marking and prevent the misidentification of the marking, so that the manufacturing method should be excellent in productivity. it can.
- a mark is applied to the coating layer using a laser beam, a mark using a laser that is difficult for translucent grease can be easily obtained. This makes it wear resistant.
- a laser marker having an excellent printing speed can be used for marking by printing such as an inkjet printer.
- FIG. 1 is an external perspective view schematically showing a piezoelectric component that can be applied to an embodiment of the present invention.
- FIG. 2 is a longitudinal sectional view schematically showing a piezoelectric component that can be applied to an embodiment of the present invention.
- FIG. 3 is an exploded perspective view schematically showing a piezoelectric component that works on the embodiment of the present invention.
- FIG. 4 is a plan view of a piezoelectric substrate used in the piezoelectric component shown in FIG.
- FIG. 5 is a cross-sectional view taken along line AA of the piezoelectric substrate used in the piezoelectric component shown in FIG.
- FIG. 6 is an equivalent circuit diagram of a piezoelectric component that works according to an embodiment of the present invention.
- FIG. 7 is an external perspective view schematically showing another example of a piezoelectric component that works on the embodiment of the present invention.
- FIG. 8 is a longitudinal sectional view schematically showing another example of a piezoelectric component that can be used in the embodiment of the present invention.
- FIG. 9 is an exploded perspective view schematically showing another example of a piezoelectric component that works on the embodiment of the present invention.
- FIG. 10 is a top view showing a capacitive element used in another example of a piezoelectric component that works according to an embodiment of the present invention.
- FIG. 11 is a bottom view showing a capacitive element used in another example of a piezoelectric component that works according to an embodiment of the present invention.
- FIG. 12 is a plan view for each step schematically showing the embodiment of the method for manufacturing a piezoelectric component of the present invention.
- FIG. 13 is a plan view for each step schematically showing the embodiment of the method for manufacturing a piezoelectric component of the present invention.
- FIG. 14 is a plan view for each step schematically showing the embodiment of the method for manufacturing a piezoelectric component of the present invention.
- FIG. 15 is a plan view for each step schematically showing the embodiment of the method for manufacturing a piezoelectric component of the present invention.
- FIG. 16 is a plan view for each step schematically showing the embodiment of the method for manufacturing a piezoelectric component of the present invention.
- 61 (61a, 61b), 62 (62a, 62b): Input / output terminal electrodes
- FIG. 1 is an external perspective view schematically showing a piezoelectric component that works according to an embodiment of the present invention.
- FIG. 2 is a longitudinal sectional view of the piezoelectric component shown in FIG. 1, and FIG. It is a disassembled perspective view of the piezoelectric component shown.
- FIG. 4 is a plan view of the piezoelectric vibration element used in the piezoelectric component shown in FIG. 1, and FIG. 5 is a cross-sectional view taken along the line AA.
- FIG. 6 is an equivalent circuit diagram of the piezoelectric component shown in FIG.
- the piezoelectric component 1 includes a piezoelectric vibration element 10 in which a pair of electrodes 20a and 20b are formed on both main surfaces of the piezoelectric substrate 11 so as to partially face each other via the piezoelectric substrate 11, and the pair of electrodes 20a and 20b.
- This is a structure having the sealing substrates 40a and 40b and the covering layers 50a and 50b formed on the outer surfaces of the pair of sealing substrates 40a and 40b.
- the pair of input / output terminal electrodes 61a and 61b are collectively represented by the number 61
- the pair of input / output terminal electrodes 62a and 62b are collectively represented by the number 62
- the ground terminal electrodes 63a and 63b are collectively represented by the number 63.
- the input / output terminal electrodes 61 and 62 and the ground terminal electrode 63 are respectively formed on both side surfaces of the piezoelectric substrate 11, and the input / output terminal electrodes 61a and 62a and the ground terminal electrode 63a are provided on one side surface and the other side surface.
- the input / output terminal electrodes 61b and 62b and the ground terminal electrode 63b are formed respectively.
- external connection electrodes 71, 72, 73 are formed on the lower surface of the piezoelectric component 1.
- Input / output terminal The child electrodes 61a and 61b are connected to the external connection electrode 71, the input / output terminal electrodes 62a and 62b are connected to the external connection electrode 72, and the ground terminal electrodes 63a and 63b are connected to the external connection electrode 73, respectively.
- the electrode 20a includes the vibrating electrode 21a and the vibrating electrode 21a as input / output terminals as shown in FIGS.
- the electrode 20b includes a vibration electrode 21b, a lead-out electrode 22b for connecting the vibration electrode 21b to the input / output terminal electrodes 62a and 62b, and extends from the vibration electrode 21b toward the ground terminal electrode 63b. And a capacitor electrode 23b for forming a capacitor with the electrode 63b.
- the vibration electrodes 21a and 21b are formed so that parts thereof face each other with the piezoelectric substrate 11 in between.
- an electric field is applied between the vibrating electrodes 21a and 21b, energy is confined between them and thickness vibration is excited (see FIG. 5).
- the piezoelectric vibration element 10 resonates at a specific frequency.
- the load capacitance shown in the equivalent circuit diagram of FIG. 6 is between the capacitance electrode 23a and the ground electrode 63a.
- the load capacitor C2 shown in the equivalent circuit diagram of FIG. 6 is formed between the capacitor electrode 23b and the ground electrode 63b.
- the piezoelectric component 1 including the piezoelectric vibration element 10 and the load capacitances CI and C2 as shown in FIG. 6 is configured as a whole.
- a characteristic of the piezoelectric component 1 of this example is that the sealing substrates 40a and 40b are made of a light-transmitting resin material.
- the light transmittance of the sealing substrates 40a and 40b is preferably 25% or more from the viewpoint of facilitating the appearance inspection without requiring a special light source. If the light transmittance is 25% or more, the state of the sealed space can be visually confirmed even with general indoor brightness (about 1500 lux). Conversely, if the light transmittance of the sealing substrates 40a and 40b is lower than 25%, it is difficult to check the state of the sealing space by visual inspection.
- the light transmittance in the present invention is measured using a spectrophotometer. Specifically, the sealing substrates 40a and 40b are irradiated with light in the visible light region (400 to 800), and the light intensity before and after transmission through the sealing substrate is measured using a spectrophotometer. It is obtained by measuring the ratio of the light intensity before and after (light intensity transmitted from the resin substrate Z light intensity of the light source).
- the sealing substrates 40a and 40b are made of a resin material having excellent processability, it is easy to make the sealing substrates 40a and 40b thin, and thus the thin piezoelectric component 1 is obtained. be able to. Furthermore, according to the piezoelectric component 1 of this example, the sealing substrates 40a and 40b are made of a resin material excellent in elasticity and toughness.
- the sealing substrates 40a and 40b themselves have high strength against external forces and thermal mechanical impacts, and the sealing substrates 40a and 40b absorb and mitigate external forces and impacts to protect the piezoelectric substrate 11.
- the piezoelectric component 1 having excellent reliability can be obtained. Specific materials for the sealing substrates 40a and 40b will be described later.
- the frames 30a and 30b are also made of a translucent resin material.
- the sealing substrates 40a and 40b and the frames 30a and 30b are set to 50% or more, after the sealing substrates 40a and 40b are arranged on the outer surfaces of the frames 30a and 30b, however, it is possible to easily confirm whether or not bubbles are present at the interface between the frames 30a and 30b and the piezoelectric substrate 11 by visual inspection. Therefore, the sealing substrates 40a and 40b and the frame
- the light transmittances of the bodies 30a and 30b are preferably 50% or more.
- the coating layers 50a and 50b made of a light-shielding (opaque) resin material are formed on the outer surfaces of the sealing substrates 40a and 40b.
- the covering layers 50a and 50b are marked (indicated by “M” in FIG. 16).
- the “mark” means a serial number attached to the piezoelectric component 1 or a trademark representing the manufacturer.
- the sealing substrates 40a and 40b are translucent and are difficult to identify.
- the sealing substrates 40a and 40b that also have a translucent grease material strength are directly marked. Compared with the case where it is made, it can be set as the piezoelectric component 1 which the visibility of the mark improved.
- the coating layers 50a, 50b made of the light-shielding resin material cover also have a function of protecting the sealing substrates 40a, 40.
- the capacitor C1 is formed between the capacitor electrode 23a and the ground terminal electrode 63a as shown in FIG. 5, and the capacitor electrode 23b and the ground terminal electrode 6 are formed. Since the capacitor C2 is formed with 3b, it is not necessary to separately form a capacitor element for forming the load capacitors CI and C2. Therefore, a small piezoelectric component 1 incorporating the piezoelectric vibration element 10 and the load capacities CI and C2 can be obtained.
- FIG. 4 which is a plan view of the piezoelectric substrate 11, the capacitive electrode 23a and the capacitive electrode 23b are arranged so as not to oppose each other via the piezoelectric substrate 11, that is, to be displaced from each other. It is preferable.
- the frames 30a and 30b are formed of an insulating resin, and are formed on the piezoelectric substrate 11 between the capacitive electrode 23a and the ground terminal electrode 63a and between the capacitive electrode 23b and the ground terminal electrode 63b.
- the capacities CI and C2 can be increased. The This is because the dielectric constants of the frames 30a and 30b are higher than the dielectric constant of air.
- the frames 30a and 30b have a function of blocking the adhesion of metallic foreign matters. For this reason, even if the distance between the capacitor electrode 23a and the ground terminal 63a and the interval between the capacitor electrode 23b and the ground terminal electrode 63b are reduced, an electrical short circuit between the electrodes due to adhesion of metallic foreign matter is prevented. can do.
- FIG. 7 is an external perspective view schematically showing a piezoelectric component that can be applied to another embodiment of the present invention.
- FIG. 8 is a schematic longitudinal sectional view of the piezoelectric component shown in FIG. 7, and FIG. 9 is an exploded perspective view of the piezoelectric component shown in FIG.
- FIGS. 10 and 11 are a top view and a bottom view, respectively, schematically showing a capacitive element used in the piezoelectric component shown in FIG.
- the characteristic feature of the piezoelectric component 2 in this example is that the capacitive electrodes 23a and 23b are not formed on the piezoelectric substrate 11, and instead the capacitive element 80 is attached to the lower surface of the sealing substrate 40b. is there.
- the capacitive element 80 includes a pair of hot-side capacitive electrodes 82a and 82b on the upper surface of the dielectric substrate 81 and a ground-side capacitance on the lower surface of the dielectric substrate 81, as shown in FIGS. Each of the electrodes 83 is formed.
- the hot-side capacitor electrode 82a is connected to the lead-out electrode 22a formed on one main surface of the piezoelectric substrate 11 and the external connection electrode 71 formed on the lower surface of the dielectric substrate 81 through the input / output terminal electrodes 61a and 61b, respectively.
- the hot-side capacitor electrode 82b is connected to the lead electrode 22b formed on the other main surface of the piezoelectric substrate 11 and the external connection electrode 72 formed on the bottom surface of the dielectric substrate 81 via the input / output terminal electrodes 62a and 62b, respectively. I'm connected.
- the ground-side capacitor electrode 83 is disposed on the lower surface of the dielectric substrate 81 so as to be positioned between the external connection electrodes 71 and 72, and both ends thereof are connected to the ground terminal electrodes 63a and 63b.
- the ground side capacitor electrode 83 also has a function as an external connection electrode.
- the piezoelectric component 2 including the piezoelectric vibration element 10 and the load capacitances CI and C2 as shown in the equivalent circuit diagram shown in FIG. 6 is configured.
- the hot-side capacitive electrode 82a and the ground-side capacitive electrode 83 are opposed to each other via the dielectric substrate 81, so the hot-side capacitive electrode 82a and the ground-side capacitive electrode
- the capacitance C1 formed between the capacitor 83 and the capacitor 83 can be increased.
- the hot-side capacitance electrode 82b and the ground-side capacitance electrode 83 are opposed to each other via the dielectric substrate 81, the hot-side capacitance electrode 82b and the ground-side capacitance electrode 83 are formed.
- the capacity C2 can be increased.
- 12 to 16 are plan views for each process schematically showing the method for manufacturing the piezoelectric component of this example.
- FIGS. 12-16 is a top view which also looked at the upper surface side force. The state below the piezoelectric mother substrate 91 is shown, but the lower side is processed in the same manner as the upper side.
- a piezoelectric mother substrate 91 having a plurality of element regions 92 that are divided and each serves as the piezoelectric vibration element 10 is prepared (FIG. 12).
- Electrodes 20a and 20b are formed in advance on both main surfaces of each element region 92 of the piezoelectric mother substrate 91.
- a dicing line 93 to be cut later by dicing is provided at the boundary between the element regions 92 of the piezoelectric mother substrate 91.
- conductive bumps 97 are formed so as to be divided into four by dicing at both end portions of the electrode 20a serving as the lead electrode 22a and both ends of the electrode 20b serving as the lead electrode 22b (see FIG. ( Figure 13).
- connection between the extraction electrode 22a and the terminal electrodes 61a and 61b and the connection between the extraction electrode 22b and the terminal electrodes 62a and 62b can be improved.
- the lattice body 94 is made transparent so as to cover both main surfaces of the piezoelectric mother substrate 91 while leaving the portions of the vibrating electrodes 21a and 21b on both main surfaces of the piezoelectric mother substrate 91. Formed using grease material (Fig. 14) The lattice body 94 is divided along with the element region 92 along the dicing line 93 to form the frame body 30 on each piezoelectric vibration element 10.
- a sealing mother board 95 made of a translucent resin material is attached so as to cover the lattice 94 (FIG. 15).
- a sealing space S is formed for each element region 92 by the element region 92 of the piezoelectric mother substrate 91, the portion that becomes the frame body 30 of the lattice body 94, and the mother substrate 95 for sealing.
- both the lattice body 94 and the sealing mother board 95 are made of a light-transmitting resin material, the formation state of the sealing space S can be confirmed by visual inspection such as image recognition.
- force such as continuous bubbles that reduce the airtightness of the sealing space S, the inside of the lattice body 94, the interface between the lattice body 94 and the piezoelectric mother substrate 91, and the interface between the lattice body 94 and the sealing mother substrate 95 It can be checked by visual inspection such as image recognition.
- a portion where the sealing allowance (indicated by "d” in FIG. 2) by the frames 30a and 30b is narrow can also be inspected by visual inspection or image recognition.
- coating layers 50a and 50b made of light-shielding (opaque) grease are formed on the outer surface of the sealing mother substrate 95 (FIG. 15). 16).
- a mark M is formed on the coating layers 50a and 50b made of the light-shielding resin material.
- the process of forming the coating layers 50a and 50b is compared to the case where the marks are directly applied to the sealing substrates 40a and 40b made of a light-transmitting resin material.
- the depth of the mark M is set to 3 ⁇ m or more, the visibility can be further improved.
- the mark M by applying the mark M to the coating layers 50a and 50b, marking using a laser beam, which is difficult for translucent grease, can be performed. As a result, the mark M having excellent wear resistance can be applied.
- a laser beam which is difficult for translucent grease
- YA G laser wavelength: 1064 nm
- CO laser wavelength: 10.6 ⁇ m
- it can. It is better that the wavelength of the laser beam used for the coating layer is excellent in color developability of the resin. In general, it is suitable to use a laser having a wavelength power of about 1064 nm.
- external connection electrodes 71, 72, 73 are formed on the lower surface of the lower coating layer 50b and divided by dicing (FIG. 16). In addition, when forming the external connection electrodes 71, 72, 73, it is possible to perform dicing with high accuracy by forming a mark serving as a reference for dicing with the same material.
- the reference pattern 96 may be formed together with the electrodes 20a and 20b on both main surfaces of the piezoelectric mother substrate 91! /.
- the reference pattern 96 is used for confirming the dicing line 93.
- the reference pattern 96 has the same width as that of the dicing blade, and is arranged immediately next to the dicing line 93. In this case, since the coating layers 50a and 50b are formed over the entire outer surfaces of the upper and lower sealing substrates 40a and 40b, the coating layer is formed only in the region to be marked, and the reference pattern 96 is formed on the coating layers 50a and 50b. Try not to cover it.
- the reference pattern 96 applied to the main surface of the piezoelectric substrate 11 can be seen through. Therefore, when dicing, the reference pattern 96 is used as a mark for dicing. It becomes possible to do.
- the input / output terminal electrodes 61 and 62 and the ground terminal electrode 63 are formed on the respective side surfaces to complete the piezoelectric component 1.
- Piezoelectric substrate 11 and piezoelectric mother substrate 91 are composed of lead zirconate titanate (PZT), lead titanate (PT), sodium potassium niobate (Na K NbO), bismuth layered compound (eg MBi Ti l-xx 3 4 Four
- It consists of piezoelectric single crystals such as crystals and lithium tantalate.
- the piezoelectric substrate 11 has a rectangular open shape with a length of 0.6 mm to 5 mm, a width of 0.2 mm to 5 mm, and a thickness of 40 m to: Lmm. I like it.
- the piezoelectric substrate 11 does not need to have a uniform thickness over the entire surface.
- the thickness of the vibration region A is made thinner than the surrounding region. Or can be formed thick.
- a piezoelectric substrate 11 provided with a powerful internal electrode such as Ag-Pd as a vibration electrode can be used.
- the value of the dielectric constant of the piezoelectric substrate 11 is preferably 1000 or less from the viewpoint of excellent resonance characteristics in the high frequency region.
- the piezoelectric substrate 11 also has a ceramic material strength
- a piezoelectric substrate 11 having desired piezoelectric characteristics can be obtained by applying a polarization treatment by applying a voltage of 3 to 6 kVZmm at a temperature of 80 to 200 ° C.
- the piezoelectric substrate 11 is made of a piezoelectric single crystal material
- the piezoelectric single crystal material ingot (base material) to be the piezoelectric substrate 11 is cut in a predetermined crystal direction to obtain a desired A piezoelectric substrate 11 having piezoelectric characteristics is obtained.
- the electrodes 20a and 20b are preferably made of a metal film such as gold, silver, copper, or aluminum from the viewpoint of conductivity.
- the thickness is preferably in the range of 0.1 ⁇ m to 3 ⁇ m. If the metal film is thinner than 0.1 ⁇ m, for example, if it is exposed to a high temperature in the atmosphere, the conductivity tends to decrease due to acid and soot, and if the metal film is thicker than 3 m, the film peels off. It is the power that makes it easier to do.
- a base electrode layer having high adhesion to the ceramic substrate such as Cr may be formed in advance, and a desired metal film may be formed thereon. After depositing a metal film on the entire surface of both main surfaces of the substrate 11, the thickness is applied by spin coating or the like.
- Various electrodes can be formed by forming a photoresist film with a force of ⁇ 10 m on a metal film and patterning it by photoetching.
- the vibration electrode 21 is disposed substantially at the center of both main surfaces of the piezoelectric substrate 11 and has a rectangular or circular shape with a length of several tens to several millimeters in the vertical and horizontal directions. The details of the dimensions are determined by the resonance characteristics and other desired electrical characteristics.
- the frame 30 (and the lattice body 94) is made of a translucent resin material.
- a resin material based on phenolic resin, polyimide resin, epoxy resin, or the like. it can.
- an epoxy resin base material because it has excellent insulating properties, high adhesion to ceramics, and excellent moisture resistance and heat resistance.
- the epoxy resin is a curable type that does not cause hydrolysis, and is added with particles such as rutile acid titanium for the purpose of reducing the moisture permeability of water, or has an insulating property.
- rutile acid titanium for the purpose of reducing the moisture permeability of water, or has an insulating property.
- 2-4 diamino-1, 6 vinyl, 1 S triamine and isocyanuric acid can be used.
- Such a resin material is prepared by, for example, applying a thermosetting or photocurable resin to the piezoelectric substrate 11 to a thickness of 1 ⁇ to 80 / ⁇ m by screen printing or transfer, and heating. Alternatively, it can be formed by curing with ultraviolet irradiation.
- the thickness of the frame 30 (and the grid 94) be 20 ⁇ m to 60 ⁇ m! / ⁇ .
- the upper surface of the lattice body 94 formed on the piezoelectric substrate 11 may have such a shape as a convex shape, when the lattice body 94 and the sealing substrate 40 are joined, It is possible to effectively suppress the bubbles that reduce the hermeticity of the sealed space from remaining on the joint surface between the two.
- the sealing substrates 40a and 40b are made of a translucent resin material and are attached to the upper and lower surfaces of the piezoelectric vibration element 10 via the frame bodies 30a and 30b to secure a sealing space together with the frame bodies 30a and 30b. It has a function.
- the vertical and horizontal lengths are usually substantially the same as the vertical and horizontal lengths of the piezoelectric substrate 11.
- the thickness of the upper sealing substrate 40a should be 10 ⁇ m or more, but the thickness of the lower sealing substrate 40b is a function to relieve stress and mechanical and thermal shock from the mounting substrate. Power to reduce the height of piezoelectric parts From the viewpoint, it is preferably 100 ⁇ m or less.
- the elastic modulus by DMA is preferably in the range of 2 to 60 GPa. From the viewpoint of the function of absorbing impact, the range of 2 to 20 GPa is particularly preferable.
- a resin sheet material obtained by impregnating a polyimide-based resin or an epoxy-based resin in a cloth having strength such as glass fiber galamide fiber is used. By using it, it is possible to reliably form a sealed space by suppressing thermal deformation of the sealing substrate 40a, and to have excellent mechanical strength.
- a polyimide resin sheet or an epoxy resin sheet (pre-preda) with a glass fiber content of 30 to 80% having an adhesive function is preferably used.
- Good bonding can be achieved by holding and curing at a temperature of 150 to 200 ° C for 5 to 90 minutes while applying a pressure of 0.2 to 5 MPa.
- a sealing substrate 40 by combining a plurality of resin sheets having different properties, a sealing substrate having excellent overall characteristics such as mechanical strength, impact resistance, and moisture resistance 40.
- the light transmittance mainly depends on the thickness of the sealing substrates 40a and 40b, the type of the resin material, and the type of additive added to the resin material. And can be adjusted by the amount. For example, when epoxy resin is used as the resin material for the sealing substrates 40a and 40b, to achieve 50% light transmittance of the sealing substrate, 100% by weight of epoxy resin, carbon black, etc. Add 15% by weight of the above coloring additive and make the thickness of the sealing substrate 150 ⁇ m!
- the covering layers 50a and 50b are made of a resin material having a light-shielding property, and are formed on the outer surfaces of the sealing substrates 40a and 40b.
- the coating layers 50a and 50b have a thickness of 5 ⁇ m to 50 ⁇ m.
- resin such as epoxy resin and polyimide resin
- a pigment and a fine powder dispersant such as carbon black It is preferable to use rosin colored by mixing and mixing.
- a resin material made by impregnating a glass fiber garamide fiber cloth with a light-shielding resin is also used. be able to.
- At least one of the coating layers 50a and 50b is marked with various information about the piezoelectric component 1, and external connection electrodes 71, 72, and 73 are formed on the lower surface of the coating layer 50b. Yes.
- the marking method as already described, printing by an ink jet printer or the like, marking with a laser beam, or the like can be used.
- the terminal electrodes 61, 62, 63 and the external connection electrodes 71, 72, 73 can be formed of a highly conductive metal film such as gold, silver, copper, and aluminum. From the viewpoint of conductivity, which is preferably formed using an epoxy-based conductive resin, those containing 75 to 95% by mass of a conductive filler such as silver, copper, or nickel are preferable. Used.
- the metal filler should have a small particle size from the viewpoint of smoothing the surface of the conductive resin and improving the mountability, but considering the printability, use an average particle size of 0.5 to 5 m. It is preferable to do.
- the thickness of the conductive film is too thin, the conductivity deteriorates. If the thickness is too thick, the conductive film is likely to be peeled off due to the stress acting during mounting. Therefore, the thickness is preferably in the range of 10 ⁇ m to 60 ⁇ m. .
- it may be applied by using a conventionally known screen printing method or roller transfer, and cured by heating or ultraviolet irradiation.
- At least one type of plating film using Cu, Ni, Sn, Au, etc. may be formed on the surface of the conductive resin, which can improve solderability.
- the dielectric substrate 81 has a function of protecting the piezoelectric substrate 11 from an external force in addition to a function of forming a load capacitance together with the hot side capacitance electrodes 82a and 82b and the ground side capacitance electrode 83. It consists of ferroelectric ceramic materials such as lead zirconate titanate (PZT), lead titanate (PT), and barium titanate (BT). From the viewpoint of mountability on circuit boards, it is 0.6mn long! ⁇ 5mm, width 0 • 2mn! A rectangular single plate having a thickness of up to 5 mm and a thickness of several tens of ⁇ m to 1 mm.
- PZT lead zirconate titanate
- PT lead titanate
- BT barium titanate
- This dielectric substrate 81 has a method in which a raw material powder is coated with a binder and pressed. The powder is mixed and dried with water and a dispersant using a ball mill, and a sheet is produced by a method such as molding by the doctor blade method with binder, solvent, plasticizer, etc., and the sheet is 1100-1400 ° C. It is formed by firing at a peak temperature of several tens of minutes to several hours.
- the dielectric substrate 81 is made of a ferroelectric ceramic material such as lead zirconate titanate (PZT), lead titanate (PT), or barium titanate (BT). Since the dielectric constant can be increased, the capacitive element 80 having a sufficiently large capacitance can be configured.
- the relative dielectric constant of the dielectric substrate 81 is preferably 200 to 5000.
- the hot-side capacitor electrodes 82a and 82b and the ground-side capacitor electrode 83 are formed by applying a conductive resin or conductive base by a conventionally known screen printing method or the like, and curing or baking by ultraviolet irradiation or heating. It is formed by doing.
- a high-temperature firing type conductive paste that is made by adding 75% to 95% by mass of silver powder, glass powder, oil or fat, and solvent and firing at 400 to 800 ° C is suitable. Can be used.
- the conductive resin a conductive resin containing a conductive filler such as silver in a proportion of 75 to 95% by mass can be suitably used.
- the electrode film thickness is preferably 8-15 ⁇ m.
- a highly conductive metal film such as gold, silver, copper, or aluminum is deposited by vacuum deposition, PVD, or sputtering, and then 1-10 ⁇ m thick by spin coating or the like. Form a photoresist film on the metal film and pattern-engage it by photoetching.
- a base electrode layer having high adhesion to the ceramic substrate such as Cr is formed in advance, and a desired metal film is formed thereon. May be.
- the conductive bump 97 is formed by applying a conductive resin conductive paste by a conventionally known screen printing method or the like, and curing or baking by ultraviolet irradiation or heating.
- the conductive paste is preferably a high-temperature firing type conductive paste that is made by adding 75% to 95% by weight of silver powder, glass powder, oil or fat, and a solvent, and firing at 400 to 800 ° C. Can be used properly.
- a conductive resin containing 75 to 95% by mass of a conductive filler such as silver can be preferably used.
- the reference pattern 96 is made of the same material as the electrodes 20a and 20b, and can be formed at the same time as the electrodes 20a and 20b using a forming method, but it can be formed by screen printing using other materials such as non-conductive pigments. May be formed.
- the covering layer 50b may be formed only on the other sealing substrate 40b.
- the sealing substrates 40a and 40b without forming the coating layers 50a and 50b.
- the visibility of the mark is excellent by setting the light transmittance of the sealing substrates 40a and 40b in the range of 25% to 75%.
- the sealing substrates 40a and 40b are directly marked, it is not necessary to separately provide the coating layers 50a and 50b, so that a thin piezoelectric component can be obtained.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200680012453XA CN101160719B (zh) | 2005-04-27 | 2006-04-27 | 压电部件及其制造方法 |
KR1020077019264A KR100909817B1 (ko) | 2005-04-27 | 2006-04-27 | 압전 부품 및 그 제조 방법 |
JP2007514805A JP4751385B2 (ja) | 2005-04-27 | 2006-04-27 | 圧電部品及びその製造方法 |
US11/911,107 US7649306B2 (en) | 2005-04-27 | 2006-04-27 | Piezoelectric component and method for manufacturing same |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005129161 | 2005-04-27 | ||
JP2005-129161 | 2005-04-27 | ||
JP2006-087615 | 2006-03-28 | ||
JP2006087615 | 2006-03-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006118192A1 true WO2006118192A1 (ja) | 2006-11-09 |
Family
ID=37307990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/308832 WO2006118192A1 (ja) | 2005-04-27 | 2006-04-27 | 圧電部品及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7649306B2 (ja) |
JP (1) | JP4751385B2 (ja) |
KR (1) | KR100909817B1 (ja) |
CN (1) | CN101160719B (ja) |
WO (1) | WO2006118192A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007274331A (ja) * | 2006-03-31 | 2007-10-18 | Kyocera Kinseki Corp | 圧電発振器 |
JP2010057011A (ja) * | 2008-08-29 | 2010-03-11 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及びその製造方法 |
JP2011223547A (ja) * | 2010-03-26 | 2011-11-04 | Seiko Instruments Inc | パッケージマーキング方法、パッケージ、圧電振動子、発振器、電子機器、および電波時計 |
JP2012217155A (ja) * | 2011-03-30 | 2012-11-08 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及び圧電デバイスの製造方法 |
JP2015162700A (ja) * | 2014-02-26 | 2015-09-07 | 京セラクリスタルデバイス株式会社 | 圧電振動素子及び圧電デバイス |
JP2016154368A (ja) * | 2011-03-30 | 2016-08-25 | 日本電波工業株式会社 | 圧電デバイス及び圧電デバイスの製造方法 |
WO2024142439A1 (ja) * | 2022-12-26 | 2024-07-04 | 株式会社村田製作所 | 圧電振動子 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007026397A1 (ja) * | 2005-08-30 | 2007-03-08 | Kyocera Corporation | 圧電共振素子及びそれを用いた圧電共振装置 |
JP5325151B2 (ja) * | 2010-03-31 | 2013-10-23 | 日本電波工業株式会社 | 水晶デバイス、及びその製造方法 |
JP2012209937A (ja) * | 2011-03-15 | 2012-10-25 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス |
JP5930526B2 (ja) * | 2012-02-20 | 2016-06-08 | 日本電波工業株式会社 | 圧電振動素子及び圧電デバイス |
JP5815612B2 (ja) * | 2013-07-29 | 2015-11-17 | 京セラ株式会社 | 電子機器 |
JP2014239203A (ja) * | 2014-01-31 | 2014-12-18 | 株式会社村田製作所 | 電子部品及び電子部品の実装構造体 |
WO2016084417A1 (ja) * | 2014-11-28 | 2016-06-02 | 京セラ株式会社 | 圧電部品 |
WO2019160140A1 (ja) * | 2018-02-19 | 2019-08-22 | 株式会社村田製作所 | 多層基板、フィルタ、マルチプレクサ、高周波フロントエンド回路及び通信装置 |
US20230070377A1 (en) * | 2021-09-09 | 2023-03-09 | Onano Industrial Corp. | Integrated structure of circuit mold unit of ltcc electronic device |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03248613A (ja) * | 1990-02-26 | 1991-11-06 | Murata Mfg Co Ltd | 圧電部品 |
JPH05218790A (ja) * | 1992-02-05 | 1993-08-27 | Matsushita Electric Ind Co Ltd | 圧電振動子 |
JP2003304137A (ja) * | 2002-02-06 | 2003-10-24 | Murata Mfg Co Ltd | 電子部品 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5539942B2 (ja) | 1974-02-05 | 1980-10-15 | ||
JPS59110217A (ja) | 1982-12-14 | 1984-06-26 | Murata Mfg Co Ltd | チツプ形状の圧電振動部品とその製造方法 |
JPS6137624A (ja) * | 1984-07-31 | 1986-02-22 | Nippon Air Shiyuutaa Kk | 気送子のステ−シヨン及びこのステ−シヨンを備えた空気搬送装置 |
JPS6137624U (ja) * | 1984-08-10 | 1986-03-08 | 株式会社村田製作所 | 静電容量内蔵型圧電共振子 |
JPH0352312A (ja) * | 1989-07-19 | 1991-03-06 | Murata Mfg Co Ltd | 圧電共振子 |
US5369862A (en) * | 1990-02-26 | 1994-12-06 | Murata Manufacturing Co., Ltd. | Method of producing a piezoelectric device |
JP2537576B2 (ja) | 1991-07-17 | 1996-09-25 | 鹿島建設株式会社 | 鉄骨柱の柱頭レベル調整装置および調整方法 |
JPH0518119U (ja) * | 1991-08-06 | 1993-03-05 | 住友金属工業株式会社 | 圧電部品 |
JP3161773B2 (ja) | 1991-09-10 | 2001-04-25 | 松下電工株式会社 | 配線器具の取付装置 |
JP3158742B2 (ja) | 1992-02-25 | 2001-04-23 | 株式会社村田製作所 | チップ型発振子およびこの発振子を用いた発振回路 |
JPH0576119U (ja) * | 1992-03-13 | 1993-10-15 | 株式会社村田製作所 | チップ型圧電部品 |
JPH06244670A (ja) * | 1993-02-16 | 1994-09-02 | Murata Mfg Co Ltd | 圧電部品 |
JPH07304135A (ja) * | 1994-05-10 | 1995-11-21 | Asahi Glass Co Ltd | 複合樹脂シート |
JPH08204496A (ja) * | 1995-01-20 | 1996-08-09 | Toko Inc | 圧電振動部品 |
JP3577783B2 (ja) * | 1995-03-01 | 2004-10-13 | イビデン株式会社 | 半田キャリアの製造方法 |
JPH09116363A (ja) * | 1995-10-20 | 1997-05-02 | Seiko Epson Corp | 圧電振動子及び圧電発振器の製造方法 |
JPH10242788A (ja) * | 1997-02-27 | 1998-09-11 | Kyocera Corp | 圧電部品 |
EP0897217A3 (en) * | 1997-08-12 | 2001-09-19 | NGK Spark Plug Co. Ltd. | Energy trapping type piezoelectric filter |
JPH11150153A (ja) * | 1997-11-18 | 1999-06-02 | Murata Mfg Co Ltd | 電子部品 |
JPH11346138A (ja) * | 1998-06-02 | 1999-12-14 | Murata Mfg Co Ltd | チップ型圧電共振子及び該チップ型圧電共振子の周波数調整方法 |
JP2001060843A (ja) * | 1999-08-23 | 2001-03-06 | Murata Mfg Co Ltd | チップ型圧電部品 |
JP3475876B2 (ja) * | 1999-10-15 | 2003-12-10 | 株式会社村田製作所 | 容量内蔵型圧電共振部品 |
JP3438689B2 (ja) * | 1999-12-20 | 2003-08-18 | 株式会社村田製作所 | 圧電共振子及び圧電発振子 |
JP2002124845A (ja) * | 2000-08-07 | 2002-04-26 | Nippon Sheet Glass Co Ltd | 水晶振動子パッケージ及びその製造方法 |
JP2002190539A (ja) * | 2000-12-22 | 2002-07-05 | Kyocera Corp | 圧電振動子用容器 |
JP2003248613A (ja) | 2001-11-20 | 2003-09-05 | Sharp Corp | 情報配信システムおよびそれに用いられる配信情報生成装置 |
JP3879923B2 (ja) * | 2002-09-25 | 2007-02-14 | セイコーエプソン株式会社 | 電子部品用蓋体の製造方法 |
JP2005218790A (ja) | 2004-02-09 | 2005-08-18 | Adachi Light Co Ltd | 遊技機の球体流下速度制動装置 |
-
2006
- 2006-04-27 JP JP2007514805A patent/JP4751385B2/ja not_active Expired - Fee Related
- 2006-04-27 CN CN200680012453XA patent/CN101160719B/zh not_active Expired - Fee Related
- 2006-04-27 US US11/911,107 patent/US7649306B2/en not_active Expired - Fee Related
- 2006-04-27 WO PCT/JP2006/308832 patent/WO2006118192A1/ja active Application Filing
- 2006-04-27 KR KR1020077019264A patent/KR100909817B1/ko not_active IP Right Cessation
-
2010
- 2010-01-12 US US12/685,891 patent/US8138659B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03248613A (ja) * | 1990-02-26 | 1991-11-06 | Murata Mfg Co Ltd | 圧電部品 |
JPH05218790A (ja) * | 1992-02-05 | 1993-08-27 | Matsushita Electric Ind Co Ltd | 圧電振動子 |
JP2003304137A (ja) * | 2002-02-06 | 2003-10-24 | Murata Mfg Co Ltd | 電子部品 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007274331A (ja) * | 2006-03-31 | 2007-10-18 | Kyocera Kinseki Corp | 圧電発振器 |
JP2010057011A (ja) * | 2008-08-29 | 2010-03-11 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及びその製造方法 |
JP2011223547A (ja) * | 2010-03-26 | 2011-11-04 | Seiko Instruments Inc | パッケージマーキング方法、パッケージ、圧電振動子、発振器、電子機器、および電波時計 |
JP2012217155A (ja) * | 2011-03-30 | 2012-11-08 | Nippon Dempa Kogyo Co Ltd | 圧電デバイス及び圧電デバイスの製造方法 |
JP2016154368A (ja) * | 2011-03-30 | 2016-08-25 | 日本電波工業株式会社 | 圧電デバイス及び圧電デバイスの製造方法 |
JP2015162700A (ja) * | 2014-02-26 | 2015-09-07 | 京セラクリスタルデバイス株式会社 | 圧電振動素子及び圧電デバイス |
WO2024142439A1 (ja) * | 2022-12-26 | 2024-07-04 | 株式会社村田製作所 | 圧電振動子 |
Also Published As
Publication number | Publication date |
---|---|
KR100909817B1 (ko) | 2009-07-28 |
CN101160719B (zh) | 2010-12-08 |
US20090236941A1 (en) | 2009-09-24 |
JP4751385B2 (ja) | 2011-08-17 |
US20100109483A1 (en) | 2010-05-06 |
US7649306B2 (en) | 2010-01-19 |
KR20070114138A (ko) | 2007-11-29 |
JPWO2006118192A1 (ja) | 2008-12-18 |
US8138659B2 (en) | 2012-03-20 |
CN101160719A (zh) | 2008-04-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4751385B2 (ja) | 圧電部品及びその製造方法 | |
JP6133609B2 (ja) | 圧電部品 | |
JP5206377B2 (ja) | 電子部品モジュール | |
US9837978B2 (en) | Piezoelectric component | |
US8256292B2 (en) | Acceleration sensor with surface protection | |
US7626317B2 (en) | Piezoelectric oscillation element and piezoelectric oscillation component using the same | |
US9267846B2 (en) | Infrared detection element, infrared detection module, and manufacturing method therefor | |
JP5121646B2 (ja) | 圧電発振子 | |
JP2007227751A (ja) | 電子部品およびその製造方法 | |
JP4508997B2 (ja) | 圧電共振部品 | |
JP4905853B2 (ja) | 圧電デバイス | |
JP5031486B2 (ja) | 電子部品 | |
JP2008244838A (ja) | 圧電共振部品の製造方法 | |
JP6117555B2 (ja) | 圧電部品 | |
JP6154146B2 (ja) | 圧電部品 | |
JP2004282621A (ja) | 容量内蔵型圧電共振子及びその周波数調整方法 | |
JP2010078389A (ja) | 加速度センサ | |
JP2010107288A (ja) | 加速度センサおよび加速度センサの実装構造 | |
JP2006311523A (ja) | 圧電発振子 | |
JP2014110449A (ja) | 圧電部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200680012453.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007514805 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020077019264 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11911107 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
NENP | Non-entry into the national phase |
Ref country code: RU |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 06745760 Country of ref document: EP Kind code of ref document: A1 |