WO2006089640A3 - Mikrofonmembran und mikrofon mit der mikrofonmembran - Google Patents

Mikrofonmembran und mikrofon mit der mikrofonmembran Download PDF

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Publication number
WO2006089640A3
WO2006089640A3 PCT/EP2006/001120 EP2006001120W WO2006089640A3 WO 2006089640 A3 WO2006089640 A3 WO 2006089640A3 EP 2006001120 W EP2006001120 W EP 2006001120W WO 2006089640 A3 WO2006089640 A3 WO 2006089640A3
Authority
WO
WIPO (PCT)
Prior art keywords
microphone
membrane
metal layer
same
piezoelectric layers
Prior art date
Application number
PCT/EP2006/001120
Other languages
English (en)
French (fr)
Other versions
WO2006089640A2 (de
Inventor
Anton Leidl
Wolfgang Pahl
Ulrich Wolff
Original Assignee
Epcos Ag
Anton Leidl
Wolfgang Pahl
Ulrich Wolff
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag, Anton Leidl, Wolfgang Pahl, Ulrich Wolff filed Critical Epcos Ag
Priority to US11/816,960 priority Critical patent/US20090129611A1/en
Priority to JP2007556515A priority patent/JP4928472B2/ja
Publication of WO2006089640A2 publication Critical patent/WO2006089640A2/de
Publication of WO2006089640A3 publication Critical patent/WO2006089640A3/de

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00—Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02—Microphones

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Diaphragms For Electromechanical Transducers (AREA)

Abstract

Die Erfindung betrifft eine Mikrofonmembran (M1), die zwei piezoelektrische Schichten (PS1, PS2) mit gleichsinnig gerichteten c-Achsen aufweist. In der mittleren Metallschicht ist eine erste elektrisch leitende Fläche (E11) ausgebildet, die mit einem ersten elektrischen Potential beaufschlagt ist. Die piezoelektrischen Schichten (PS1, PS2) sind jeweils zwischen der mittleren Metallschicht (ML2) und einer außenliegenden Metallschicht (ML1, ML3) angeordnet. In einer bevorzugten Variante weist die Membran (M1) bezüglich der Schichtenfolge und der Schichtendicke einen weitgehend symmetrischen Aufbau auf.
PCT/EP2006/001120 2005-02-24 2006-02-08 Mikrofonmembran und mikrofon mit der mikrofonmembran WO2006089640A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US11/816,960 US20090129611A1 (en) 2005-02-24 2006-02-08 Microphone Membrane And Microphone Comprising The Same
JP2007556515A JP4928472B2 (ja) 2005-02-24 2006-02-08 マイクロフォンダイアフラムおよびマイクロフォンダイアフラムを有するマイクロフォン

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005008514.8A DE102005008514B4 (de) 2005-02-24 2005-02-24 Mikrofonmembran und Mikrofon mit der Mikrofonmembran
DE102005008514.8 2005-02-24

Publications (2)

Publication Number Publication Date
WO2006089640A2 WO2006089640A2 (de) 2006-08-31
WO2006089640A3 true WO2006089640A3 (de) 2006-10-26

Family

ID=36384495

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2006/001120 WO2006089640A2 (de) 2005-02-24 2006-02-08 Mikrofonmembran und mikrofon mit der mikrofonmembran

Country Status (4)

Country Link
US (1) US20090129611A1 (de)
JP (1) JP4928472B2 (de)
DE (1) DE102005008514B4 (de)
WO (1) WO2006089640A2 (de)

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KR20120014591A (ko) * 2009-05-18 2012-02-17 노우레스 일렉트로닉스, 엘엘시 감소된 진동 감도를 갖는 마이크로폰
TW201515474A (zh) * 2013-10-04 2015-04-16 Fan-En Yueh 收音裝置及其製造方法
DE102013114826A1 (de) 2013-12-23 2015-06-25 USound GmbH Mikro-elektromechanischer Schallwandler mit schallenergiereflektierender Zwischenschicht
DE102016125082B3 (de) * 2016-12-21 2018-05-09 Infineon Technologies Ag Halbleitervorrichtung, mikrofon und verfahren zum herstellen einer halbleitervorrichtung
JP6787553B2 (ja) * 2017-02-14 2020-11-18 新日本無線株式会社 圧電素子
JP2019007749A (ja) * 2017-06-20 2019-01-17 ヤマハ株式会社 圧力センサー
KR101994583B1 (ko) * 2018-01-30 2019-06-28 김경원 Mems 압전형 마이크로폰
CN110793708B (zh) * 2019-11-15 2021-12-03 联合微电子中心有限责任公司 一种压电式mems声传感器
EP4082961A4 (de) * 2019-12-25 2023-10-25 Denso Corporation Piezoelektrisches element, piezoelektrische vorrichtung und herstellungsverfahren eines piezoelektrischen elementes
WO2021134671A1 (zh) * 2019-12-31 2021-07-08 瑞声声学科技(深圳)有限公司 压电mems麦克风及压电mems麦克风的制备方法
WO2021235080A1 (ja) * 2020-05-20 2021-11-25 ローム株式会社 トランスデューサ、及びその駆動方法、並びにシステム

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Also Published As

Publication number Publication date
WO2006089640A2 (de) 2006-08-31
JP2008532370A (ja) 2008-08-14
US20090129611A1 (en) 2009-05-21
DE102005008514A1 (de) 2006-08-31
JP4928472B2 (ja) 2012-05-09
DE102005008514B4 (de) 2019-05-16

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