WO2006080178A1 - 金属パターン形成材料、架橋性モノマー、及び金属パターンの形成方法 - Google Patents
金属パターン形成材料、架橋性モノマー、及び金属パターンの形成方法 Download PDFInfo
- Publication number
- WO2006080178A1 WO2006080178A1 PCT/JP2005/024140 JP2005024140W WO2006080178A1 WO 2006080178 A1 WO2006080178 A1 WO 2006080178A1 JP 2005024140 W JP2005024140 W JP 2005024140W WO 2006080178 A1 WO2006080178 A1 WO 2006080178A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- pattern
- meth
- forming material
- crosslinkable monomer
- Prior art date
Links
- 239000000178 monomer Substances 0.000 title claims abstract description 93
- 239000000463 material Substances 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004132 cross linking Methods 0.000 title claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- 239000002184 metal Substances 0.000 claims abstract description 98
- 229920000642 polymer Polymers 0.000 claims abstract description 47
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000011159 matrix material Substances 0.000 claims abstract description 39
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 claims abstract description 26
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 24
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 22
- 239000000203 mixture Substances 0.000 claims abstract description 21
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 15
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims abstract description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 32
- 239000000243 solution Substances 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 28
- 239000003999 initiator Substances 0.000 claims description 21
- 239000003112 inhibitor Substances 0.000 claims description 20
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 claims description 16
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 14
- 238000006116 polymerization reaction Methods 0.000 claims description 11
- 238000010304 firing Methods 0.000 claims description 8
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 claims description 7
- 150000001412 amines Chemical class 0.000 claims description 6
- 230000007261 regionalization Effects 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 238000013329 compounding Methods 0.000 claims description 3
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000003377 acid catalyst Substances 0.000 claims description 2
- 238000007259 addition reaction Methods 0.000 claims description 2
- 238000006297 dehydration reaction Methods 0.000 claims description 2
- 125000001174 sulfone group Chemical group 0.000 claims description 2
- 150000003457 sulfones Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 11
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 abstract 1
- -1 polyglycerin Polymers 0.000 description 26
- 230000018109 developmental process Effects 0.000 description 14
- 229910000510 noble metal Inorganic materials 0.000 description 14
- 229940059574 pentaerithrityl Drugs 0.000 description 13
- 239000010408 film Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 11
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 11
- 238000009835 boiling Methods 0.000 description 11
- 239000003960 organic solvent Substances 0.000 description 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- CNHDIAIOKMXOLK-UHFFFAOYSA-N toluquinol Chemical compound CC1=CC(O)=CC=C1O CNHDIAIOKMXOLK-UHFFFAOYSA-N 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 9
- 238000002156 mixing Methods 0.000 description 9
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 8
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 229920001223 polyethylene glycol Polymers 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 238000012719 thermal polymerization Methods 0.000 description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 7
- 239000002202 Polyethylene glycol Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- VRJHQPZVIGNGMX-UHFFFAOYSA-N 4-piperidinone Chemical compound O=C1CCNCC1 VRJHQPZVIGNGMX-UHFFFAOYSA-N 0.000 description 6
- NWVVVBRKAWDGAB-UHFFFAOYSA-N hydroquinone methyl ether Natural products COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 6
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 5
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 5
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 4
- 229920002125 Sokalan® Polymers 0.000 description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005227 gel permeation chromatography Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 235000011187 glycerol Nutrition 0.000 description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 4
- 239000011976 maleic acid Substances 0.000 description 4
- 239000004584 polyacrylic acid Substances 0.000 description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 3
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920001451 polypropylene glycol Polymers 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 229960004063 propylene glycol Drugs 0.000 description 3
- 235000013772 propylene glycol Nutrition 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 3
- JNELGWHKGNBSMD-UHFFFAOYSA-N xanthone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3OC2=C1 JNELGWHKGNBSMD-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 2
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- NJWGQARXZDRHCD-UHFFFAOYSA-N 2-methylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3C(=O)C2=C1 NJWGQARXZDRHCD-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- FKOZPUORKCHONH-UHFFFAOYSA-N 2-methylpropane-1-sulfonic acid Chemical compound CC(C)CS(O)(=O)=O FKOZPUORKCHONH-UHFFFAOYSA-N 0.000 description 2
- AYKYXWQEBUNJCN-UHFFFAOYSA-N 3-methylfuran-2,5-dione Chemical compound CC1=CC(=O)OC1=O AYKYXWQEBUNJCN-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- ASDLSKCKYGVMAI-UHFFFAOYSA-N 9,10-dioxoanthracene-2-carboxylic acid Chemical compound C1=CC=C2C(=O)C3=CC(C(=O)O)=CC=C3C(=O)C2=C1 ASDLSKCKYGVMAI-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- IXSUHTFXKKBBJP-UHFFFAOYSA-L azanide;platinum(2+);dinitrite Chemical compound [NH2-].[NH2-].[Pt+2].[O-]N=O.[O-]N=O IXSUHTFXKKBBJP-UHFFFAOYSA-L 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 244000309464 bull Species 0.000 description 2
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical compound CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- HNEGQIOMVPPMNR-IHWYPQMZSA-N citraconic acid Chemical compound OC(=O)C(/C)=C\C(O)=O HNEGQIOMVPPMNR-IHWYPQMZSA-N 0.000 description 2
- 229940018557 citraconic acid Drugs 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 229940105990 diglycerin Drugs 0.000 description 2
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003480 eluent Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- XFHJDMUEHUHAJW-UHFFFAOYSA-N n-tert-butylprop-2-enamide Chemical compound CC(C)(C)NC(=O)C=C XFHJDMUEHUHAJW-UHFFFAOYSA-N 0.000 description 2
- 150000002989 phenols Chemical group 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229940079877 pyrogallol Drugs 0.000 description 2
- 150000004059 quinone derivatives Chemical class 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229940116351 sebacate Drugs 0.000 description 2
- CXMXRPHRNRROMY-UHFFFAOYSA-L sebacate(2-) Chemical compound [O-]C(=O)CCCCCCCCC([O-])=O CXMXRPHRNRROMY-UHFFFAOYSA-L 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 239000003021 water soluble solvent Substances 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- ZWVMLYRJXORSEP-UHFFFAOYSA-N 1,2,6-Hexanetriol Chemical compound OCCCCC(O)CO ZWVMLYRJXORSEP-UHFFFAOYSA-N 0.000 description 1
- 229940083957 1,2-butanediol Drugs 0.000 description 1
- QWUWMCYKGHVNAV-UHFFFAOYSA-N 1,2-dihydrostilbene Chemical group C=1C=CC=CC=1CCC1=CC=CC=C1 QWUWMCYKGHVNAV-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- BGJSXRVXTHVRSN-UHFFFAOYSA-N 1,3,5-trioxane Chemical compound C1OCOCO1 BGJSXRVXTHVRSN-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- 229940035437 1,3-propanediol Drugs 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VZXPHDGHQXLXJC-UHFFFAOYSA-N 1,6-diisocyanato-5,6-dimethylheptane Chemical compound O=C=NC(C)(C)C(C)CCCCN=C=O VZXPHDGHQXLXJC-UHFFFAOYSA-N 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- DZSVIVLGBJKQAP-UHFFFAOYSA-N 1-(2-methyl-5-propan-2-ylcyclohex-2-en-1-yl)propan-1-one Chemical compound CCC(=O)C1CC(C(C)C)CC=C1C DZSVIVLGBJKQAP-UHFFFAOYSA-N 0.000 description 1
- JKVSAZTYCZKNDX-UHFFFAOYSA-N 1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C1=CC(C(=O)CCC)=CC=C1N1CCOCC1 JKVSAZTYCZKNDX-UHFFFAOYSA-N 0.000 description 1
- FYBFGAFWCBMEDG-UHFFFAOYSA-N 1-[3,5-di(prop-2-enoyl)-1,3,5-triazinan-1-yl]prop-2-en-1-one Chemical compound C=CC(=O)N1CN(C(=O)C=C)CN(C(=O)C=C)C1 FYBFGAFWCBMEDG-UHFFFAOYSA-N 0.000 description 1
- BOCJQSFSGAZAPQ-UHFFFAOYSA-N 1-chloroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl BOCJQSFSGAZAPQ-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- 229940044613 1-propanol Drugs 0.000 description 1
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 description 1
- BIFLVOKTTMOXNC-UHFFFAOYSA-N 2,2-dichloro-3,3-dimethyl-1-phenylbutan-1-one Chemical compound CC(C)(C)C(Cl)(Cl)C(=O)C1=CC=CC=C1 BIFLVOKTTMOXNC-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- HQCSZRIVJVOYSU-UHFFFAOYSA-N 2-(ethoxymethyl)oxirane Chemical compound CCOCC1CO1 HQCSZRIVJVOYSU-UHFFFAOYSA-N 0.000 description 1
- INFFATMFXZFLAO-UHFFFAOYSA-N 2-(methoxymethoxy)ethanol Chemical compound COCOCCO INFFATMFXZFLAO-UHFFFAOYSA-N 0.000 description 1
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- SEFYJVFBMNOLBK-UHFFFAOYSA-N 2-[2-[2-(oxiran-2-ylmethoxy)ethoxy]ethoxymethyl]oxirane Chemical compound C1OC1COCCOCCOCC1CO1 SEFYJVFBMNOLBK-UHFFFAOYSA-N 0.000 description 1
- HLMXWUYOTWZKHB-UHFFFAOYSA-N 2-aminoethanol;platinum Chemical compound [Pt].NCCO HLMXWUYOTWZKHB-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- MRDMGGOYEBRLPD-UHFFFAOYSA-N 2-ethoxy-1-(2-ethoxyphenyl)ethanone Chemical compound CCOCC(=O)C1=CC=CC=C1OCC MRDMGGOYEBRLPD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- FWWXYLGCHHIKNY-UHFFFAOYSA-N 2-ethoxyethyl prop-2-enoate Chemical compound CCOCCOC(=O)C=C FWWXYLGCHHIKNY-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- HFCUBKYHMMPGBY-UHFFFAOYSA-N 2-methoxyethyl prop-2-enoate Chemical compound COCCOC(=O)C=C HFCUBKYHMMPGBY-UHFFFAOYSA-N 0.000 description 1
- XEEYSDHEOQHCDA-UHFFFAOYSA-N 2-methylprop-2-ene-1-sulfonic acid Chemical compound CC(=C)CS(O)(=O)=O XEEYSDHEOQHCDA-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- HRSWSISJJJDBOQ-UHFFFAOYSA-N 2-oxo-1,3-diaza-8-azoniaspiro[4.5]dec-3-en-4-olate Chemical compound N1C(=O)NC(=O)C11CCNCC1 HRSWSISJJJDBOQ-UHFFFAOYSA-N 0.000 description 1
- AXYQEGMSGMXGGK-UHFFFAOYSA-N 2-phenoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(=O)C(C=1C=CC=CC=1)OC1=CC=CC=C1 AXYQEGMSGMXGGK-UHFFFAOYSA-N 0.000 description 1
- KRSXGTAVHIDVPM-UHFFFAOYSA-N 2-phenoxyacetophenone Chemical compound C=1C=CC=CC=1C(=O)COC1=CC=CC=C1 KRSXGTAVHIDVPM-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- HCGFUIQPSOCUHI-UHFFFAOYSA-N 2-propan-2-yloxyethanol Chemical compound CC(C)OCCO HCGFUIQPSOCUHI-UHFFFAOYSA-N 0.000 description 1
- BJEMXPVDXFSROA-UHFFFAOYSA-N 3-butylbenzene-1,2-diol Chemical group CCCCC1=CC=CC(O)=C1O BJEMXPVDXFSROA-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- WHNPOQXWAMXPTA-UHFFFAOYSA-N 3-methylbut-2-enamide Chemical compound CC(C)=CC(N)=O WHNPOQXWAMXPTA-UHFFFAOYSA-N 0.000 description 1
- HVCNXQOWACZAFN-UHFFFAOYSA-N 4-ethylmorpholine Chemical compound CCN1CCOCC1 HVCNXQOWACZAFN-UHFFFAOYSA-N 0.000 description 1
- UWDMKTDPDJCJOP-UHFFFAOYSA-N 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-ium-4-carboxylate Chemical compound CC1(C)CC(O)(C(O)=O)CC(C)(C)N1 UWDMKTDPDJCJOP-UHFFFAOYSA-N 0.000 description 1
- UZFMOKQJFYMBGY-UHFFFAOYSA-N 4-hydroxy-TEMPO Chemical group CC1(C)CC(O)CC(C)(C)N1[O] UZFMOKQJFYMBGY-UHFFFAOYSA-N 0.000 description 1
- ZWAPMFBHEQZLGK-UHFFFAOYSA-N 5-(dimethylamino)-2-methylidenepentanamide Chemical compound CN(C)CCCC(=C)C(N)=O ZWAPMFBHEQZLGK-UHFFFAOYSA-N 0.000 description 1
- RZVHIXYEVGDQDX-UHFFFAOYSA-N 9,10-anthraquinone Chemical class C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 RZVHIXYEVGDQDX-UHFFFAOYSA-N 0.000 description 1
- OKONMFPEKSWGEU-UHFFFAOYSA-N 9,10-dioxoanthracene-2,7-disulfonic acid Chemical compound C1=C(S(O)(=O)=O)C=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 OKONMFPEKSWGEU-UHFFFAOYSA-N 0.000 description 1
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 1
- IKHGUXGNUITLKF-UHFFFAOYSA-N Acetaldehyde Chemical compound CC=O IKHGUXGNUITLKF-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-XLOQQCSPSA-N Alpha-Lactose Chemical compound O[C@@H]1[C@@H](O)[C@@H](O)[C@@H](CO)O[C@H]1O[C@@H]1[C@@H](CO)O[C@H](O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-XLOQQCSPSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BDJFYLJUHFIMMF-UHFFFAOYSA-N C(CCCC)[PH2]=O Chemical compound C(CCCC)[PH2]=O BDJFYLJUHFIMMF-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical group N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 1
- 229930091371 Fructose Natural products 0.000 description 1
- 239000005715 Fructose Substances 0.000 description 1
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 229920002527 Glycogen Polymers 0.000 description 1
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 1
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QKKXKWKRSA-N Lactose Natural products OC[C@H]1O[C@@H](O[C@H]2[C@H](O)[C@@H](O)C(O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@H]1O GUBGYTABKSRVRQ-QKKXKWKRSA-N 0.000 description 1
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 1
- 229930006000 Sucrose Natural products 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- QYTDEUPAUMOIOP-UHFFFAOYSA-N TEMPO Chemical group CC1(C)CCCC(C)(C)N1[O] QYTDEUPAUMOIOP-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 1
- MOHYGSBMXIJZBJ-UHFFFAOYSA-N [Ir+4] Chemical compound [Ir+4] MOHYGSBMXIJZBJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000008062 acetophenones Chemical class 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 125000005396 acrylic acid ester group Chemical group 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- MSSUFHMGCXOVBZ-UHFFFAOYSA-N anthraquinone-2,6-disulfonic acid Chemical compound OS(=O)(=O)C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 MSSUFHMGCXOVBZ-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- PDJBCBKQQFANPW-UHFFFAOYSA-L azanide;platinum(2+);dichloride Chemical compound [NH2-].[NH2-].[NH2-].[NH2-].Cl[Pt]Cl PDJBCBKQQFANPW-UHFFFAOYSA-L 0.000 description 1
- XTKDAFGWCDAMPY-UHFFFAOYSA-N azaperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCN(C=2N=CC=CC=2)CC1 XTKDAFGWCDAMPY-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 description 1
- ZLSMCQSGRWNEGX-UHFFFAOYSA-N bis(4-aminophenyl)methanone Chemical compound C1=CC(N)=CC=C1C(=O)C1=CC=C(N)C=C1 ZLSMCQSGRWNEGX-UHFFFAOYSA-N 0.000 description 1
- JRPRCOLKIYRSNH-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) benzene-1,2-dicarboxylate Chemical compound C=1C=CC=C(C(=O)OCC2OC2)C=1C(=O)OCC1CO1 JRPRCOLKIYRSNH-UHFFFAOYSA-N 0.000 description 1
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 150000007942 carboxylates Chemical group 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- XNMQEEKYCVKGBD-UHFFFAOYSA-N dimethylacetylene Natural products CC#CC XNMQEEKYCVKGBD-UHFFFAOYSA-N 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- GUUVPOWQJOLRAS-UHFFFAOYSA-N diphenyl disulphide Natural products C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 150000002016 disaccharides Chemical class 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- WRQSVSBTUKVOMY-UHFFFAOYSA-N ethyl prop-2-enoate;methyl 2-methylprop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.CCOC(=O)C=C.COC(=O)C(C)=C WRQSVSBTUKVOMY-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229930182830 galactose Natural products 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 150000004676 glycans Chemical class 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229940096919 glycogen Drugs 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N hexane Substances CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 239000008101 lactose Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005374 membrane filtration Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 150000002772 monosaccharides Chemical class 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- CQIOFKRONDXZJC-UHFFFAOYSA-N n-methylideneprop-2-enamide Chemical compound C=CC(=O)N=C CQIOFKRONDXZJC-UHFFFAOYSA-N 0.000 description 1
- QNILTEGFHQSKFF-UHFFFAOYSA-N n-propan-2-ylprop-2-enamide Chemical compound CC(C)NC(=O)C=C QNILTEGFHQSKFF-UHFFFAOYSA-N 0.000 description 1
- KPSSIOMAKSHJJG-UHFFFAOYSA-N neopentyl alcohol Chemical compound CC(C)(C)CO KPSSIOMAKSHJJG-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- HPAFOABSQZMTHE-UHFFFAOYSA-N phenyl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)C1=CC=CC=C1 HPAFOABSQZMTHE-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 150000003021 phthalic acid derivatives Chemical class 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001282 polysaccharide Polymers 0.000 description 1
- 239000005017 polysaccharide Substances 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001223 reverse osmosis Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- SONJTKJMTWTJCT-UHFFFAOYSA-K rhodium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Rh+3] SONJTKJMTWTJCT-UHFFFAOYSA-K 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 1
- 229940098221 silver cyanide Drugs 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000005720 sucrose Substances 0.000 description 1
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 1
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- YODZTKMDCQEPHD-UHFFFAOYSA-N thiodiglycol Chemical class OCCSCCO YODZTKMDCQEPHD-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000003799 water insoluble solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F20/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide or nitrile thereof
- C08F20/02—Monocarboxylic acids having less than ten carbon atoms, Derivatives thereof
- C08F20/52—Amides or imides
- C08F20/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
- C08F20/58—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-acryloylmorpholine
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C233/00—Carboxylic acid amides
- C07C233/01—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms
- C07C233/16—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms
- C07C233/17—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom
- C07C233/20—Carboxylic acid amides having carbon atoms of carboxamide groups bound to hydrogen atoms or to acyclic carbon atoms having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by singly-bound oxygen atoms with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by an acyclic carbon atom having the carbon atom of the carboxamide group bound to a carbon atom of an acyclic unsaturated carbon skeleton
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/52—Amides or imides
- C08F220/54—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide
- C08F220/58—Amides, e.g. N,N-dimethylacrylamide or N-isopropylacrylamide containing oxygen in addition to the carbonamido oxygen, e.g. N-methylolacrylamide, N-(meth)acryloylmorpholine
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/04—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/06—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/105—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0525—Patterning by phototackifying or by photopatterning adhesive
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
Definitions
- Metal pattern forming material, crosslinkable monomer, and metal pattern forming method Metal pattern forming method
- the present invention can be used in the field of manufacturing flat panel displays such as field 'emission' displays (hereinafter referred to as FED), plasma displays, liquid crystal displays, and other various electronic devices.
- FED field 'emission' displays
- the present invention relates to a metal pattern forming method and a metal pattern forming material used therefor (hereinafter also referred to as a pattern forming material).
- the present invention also relates to a crosslinkable monomer used for a metal pattern forming material.
- Patent Document 1 discloses a method in which a photosensitive resin is applied and exposed to light, and then development is performed using water or a developer containing 50 mass% or more of water.
- water-soluble photosensitive resin examples include polybulal alcohols containing carboxynole groups and polybulurpyrrolidone, and in the examples, methacrylic acid monomethyl methacrylate monoethyl acrylate _n_butyl acrylate A azobisisobutyronitrinole copolymer is used.
- Patent Document 1 Japanese Patent Laid-Open No. 2004-115824 (Page 6)
- the conventional metal pattern forming method described above has a problem in that the metal pattern after baking is not dense because the adsorptivity of the metal component is poor.
- an object of the present invention is to provide a method for forming a metal pattern with high performance for chemically adsorbing a metal, a pattern forming material used therefor, and a crosslinkable monomer to form a denser pattern. .
- a crosslinkable monomer used for a metal pattern forming material which contains a condensate of a polyvalent alcohol and N-methylol (meth) acrylamide.
- the condensate contains the N-methylol with respect to one molecule of pentaerythritol.
- (Meth) acrylamide The crosslinkable monomer according to (1) or (2), which is a mixture of mono-, di-, tri-, tetra-, penta-, and hexa-forms in which one molecule is condensed.
- An exposure step of exposing a pattern forming material that can be developed with a pure water solution having a pH of less than 7 and has at least one of a carboxyl group and a sulfone group; and a pH of less than 7 A patterning process using a photolithography method including development with a pure water solution, and chemisorption of metal ions or complex ions of metal compounds in an aqueous solution containing metal components.
- the pattern forming material can be developed with a pure water solution having a pH of 6.5 or less, and the development step is performed using the pure water solution having a pH of 6.5 or less.
- Acid value power S of the matrix polymer (A), from 400 mgKH / g to 700 mgKH The method for forming a metal pattern according to (8), wherein the metal pattern is Zg.
- the (B) crosslinkable monomer is (bl) a polyfunctional monomer that is a condensate of at least a polyhydric alcohol and N-methylol (meth) acrylamide, and (b2) a polyfunctional (meth). And (8) to (10), wherein the metal pattern is formed.
- [0018] (13) comprising (A) a matrix polymer, (B) a crosslinkable monomer, and (C) a photopolymerization initiator, wherein (A) the matrix polymer is at least one of a carboxyl group and a sulfonic acid group.
- Metal pattern forming material characterized by having either of these.
- the (B) crosslinkable monomer is (bl) a polyfunctional monomer that is a condensate of at least a polyhydric alcohol and N-methylol (meth) acrylamide, and (b2) a polyfunctional (meth).
- the developer is a pure water solution having a pH of less than 7
- the carboxyl component in the alkaline component force pattern in the developer having a pH of 7 or more is obtained. It can be prevented from being chemically adsorbed to a group or sulfonic acid group.
- metal ions or metal compound complex ions are easily adsorbed to the pattern.
- the metal pattern can be formed stably.
- a metal ion or a complex ion of a metal compound may be chemically adsorbed on the pattern. it can.
- the balance between developability for pure water and patterning resistance during pattern formation is more suitable. It can be.
- the developer of the pattern forming material is a pure water solution having a pH of less than 7, so that the alkaline component strength pattern in the pure water solution has a carboxyl group or a sulfonic acid group. Chemosorption can be suppressed, and metal ions or metal compound complex ions can be easily chemisorbed into the pattern. As a result, according to the present invention, a metal pattern having a desired shape, film thickness, and the like can be reliably formed.
- a metal was formed on the entire surface of the substrate by sputtering and etched to form a metal pattern.
- at least one of a carboxyl group and a sulfonic acid group is used.
- One and metal ions or complex ions of metal compounds are chemically adsorbed to the pattern by ionic bond, so that the metal is selectively adsorbed only on the part that forms the metal pattern, thus reducing the material cost. Can do.
- FIG. 1 is a diagram showing the results of analyzing the crosslinkable monomer according to the present invention using gel permeation chromatography.
- FIG. 2 is a diagram showing the results of analyzing a crosslinkable monomer according to the present invention using a mass spectrometer.
- FIG. 3 is a diagram showing the results of analyzing a crosslinkable monomer according to the present invention using a mass spectrometer.
- the crosslinkable monomer according to the present invention is a condensate of polyhydric alcohol and N-methylol (meth) atalinoleamide.
- Polyhydric alcoholones include ethylene glycol, diethylene glycol, 1,2_propanediol, 1,3_propanediol, 1,2_butanediol, 1,3_butanediol, 1,4_ Butanediol, 2,3_Butanediol, 2-Butene 1, 4_Dianole, 2_Methyl_2,4_Pentanediol, 2_Ethyl-1,3-Hexanediol, 1,2,6 Hexane Triol, dipropylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, polypropylene glycol, neopentyl glycol, 1,5-pentanediol, hexanediol, trimethylolpropane, glycerin, diglycerin, polyglycerin, polyoxyethylene (N) Diglyceryl etherol, polyoxypropane, gly
- pentaerythritol from the viewpoint of improving the development resistance after pattern formation and suppressing the precipitation of methylenebis (meth) acrylamide, which is a reaction product of N-methylol (meth) acrylamide.
- the "crosslinkable monomer according to the present invention” is obtained.
- the condensation conditions it is preferable to condense at 85 ° C. to 95 ° C. for 1.5 hours.
- N-methylol (meth) acrylamide is determined by the number of hydroxyl groups in the polyhydric alcohol. In the case of pentaerythritol, N-methylol (meth) acrylamide is added in an amount of 2 to 4 times mol. Preferable 1. It is more preferable to add 5 to 2.5 times mol.
- the crosslinkable monomer may contain a polymerization inhibitor.
- a polymerization inhibitor Hydroquinone, methylhydroquinone, hydroquinone monomethyl ether, quinone derivatives such as p-benzoquinone, 2,6-di tert-butyl _p_talesol, force teconole, tertiary butylcatechol, phenol derivatives such as pyrogallol and hinder It is preferable to use a hindered amine polymerization inhibitor from the viewpoint of the strength S in which a amine polymerization inhibitor is used and the effect of the inhibitor.
- hindered amine polymerization inhibitors include bis (2, 2, 6, 6-tetramethinole_4-piperidyl) sebacate, bis (1, 2, 2, 6, 6-pentamethyl mono-4-piperidyl) sebacate, 4 _Benzyloxy-1, 2, 6, 6, 6-tetramethinorebiperidine, 8-acetinolele 3-dodecinole 7, 7, 9, 9-tela la methinore 1, 3, 8-triazaspiro [4, 5] decane 2, 4 Dione, 4-hydroxy 2, 2, 6, 6 Tetramethinorebiperidine N-year-old Xinole, 2, 2, 6, 6 Tetramethinorebiperidine, 2, 2, 6, 6— Tetramethylpiperidine 1-oxyl, 2, 2, 6 , 6 Tetramethyl-4-piberidinore, 2, 2, 6, 6 Tetramethinore 4-piperidone, 2, 2, 6, 6 Tetramethinore 4-piperidone xime, 1, 2, 2, 6, 6 Pentamethinore
- the solvent used in the condensation reaction can be appropriately selected from organic solvents used in pattern forming materials described later.
- the condensate obtained by the above condensation reaction is a mono-, di-, tri-, tetra-, penta-, penta-erythritol with one molecule of N-methylol (meth) acrylamide condensed. It is a mixture of the body and hexa.
- the condensate according to the present invention is used for a pattern forming material, it is preferable to blend 20 to 80 parts by mass with respect to 100 parts by mass of the total solid content of the pattern forming material 30. More preferably, 70 parts by mass to 70 parts by mass is blended.
- the metal pattern forming method according to the present embodiment is a method of forming a fine metal pattern on a glass or ceramic substrate. Specifically, a photolithography method is used. Forming a pattern by patterning, forming a metal-containing pattern by chemically adsorbing metal ions or metal compound complex ions to the pattern, and firing the metal pattern to form a metal Forming a metal pattern containing a single substance or a metal oxide.
- a negative pattern forming material that can be developed with a pure water solution having a pH of less than 7 is applied to the surface of the substrate (application step), and at a predetermined temperature. This is dried (drying step), exposed (exposure step), and developed using a pure water solution, and a water rinse step of rinsing with water.
- (A) a matrix polymer having at least one of a carboxyl group and a sulfonic acid group in the composition is used.
- the step of forming a metal-containing pattern refers to immersing the pattern obtained in the above step in an aqueous solution containing a metal compound, and chemically irradiating metal ions or metal compound complexes in the aqueous solution to this pattern.
- the process of making it adsorb
- the step of forming a metal pattern refers to a metal pattern containing a single metal or a metal oxide by baking the metal-containing pattern after washing and drying the metal-containing pattern obtained in the above step.
- the metal pattern to be formed in the present embodiment is a pattern including a noble metal, and is formed as a wiring pattern or various electrode patterns.
- a photosensitive component containing (A) a matrix polymer containing at least one of a carboxyl group and a sulfonic acid group and (B) a crosslinkable monomer is used. More specifically, as the pattern forming material, (A) the matrix polymer has an acid value in the range of 400 mgKOHZg to 700 mgKOHZg.
- the composition of the photosensitive component as the pattern forming material in the present embodiment includes the above (A) matrix polymer, (B) crosslinkable monomer, (C) photopolymerization initiator, A thermal polymerization inhibitor, a water-soluble organic solvent having a boiling point of 95 ° C to 180 ° C, and the like can be contained as a coating solution. Further, a plasticizer, an oxygen inhibition inhibitor and the like may be appropriately added to such a photosensitive component.
- [Matrix polymer] (A) The matrix polymer is insolubilized by a photopolymerization reaction, and therefore it is necessary to leave metal ions or metal compound complex ions in the pattern. Therefore, the matrix polymer has a double bond and has a carboxyl group and sulfonic acid in the main chain. Having at least one of the groups. Of course, a carboxyl group or a sulfonic acid group may be introduced into (B) the crosslinkable monomer which is a composition other than (A) the matrix polymer.
- the matrix polymer includes olefinic unsaturated carboxylic acids and their carboxylic acid salts (that is, acrylic acid), methacrylic acid, maleic acid, itaconic acid, crotonic acid, 2-acrylamide.
- carboxylic acid salts that is, acrylic acid
- methacrylic acid maleic acid
- itaconic acid crotonic acid
- 2-acrylamide 2-acrylamide
- -Copolymers such as 2-methylpropane sulfonic acid, tert-butylacrylamide sulfonic acid, styrene sulfonic acid, linoles norephonic acid, methallyl sulfonic acid, etc. may be used.
- a polymer using at least one monomer component of the above-mentioned monomer having a carboxyl group and a monomer having a sulfonic acid group may be used. Both the monomer having a carboxyl group and the monomer having a sulfonic acid group are usable. It may be a polymer using the monomer component.
- the (A) copolymer of the matrix polymer and the monomers that can be copolymerized include acrylic acid esters, (meth) acrylic acid such as methyl, ethyl, butyl, isobutyl, and octyl. Esters, (meth) acrylic acid esters having an ether bond such as 2-methoxyethyl acrylate, 2-ethoxyethyl acrylate, 2-hydroxyethyl acrylate, 2-hydroxypropyl methacrylate, etc. Hydroxy group-containing monomers.
- examples of acrylamides and methacrylolamides include acrylamide, methacrylolamide, dimethylacrylamide, jetylacrylamide, dimethylaminopropylacrylamide, and isopropylacrylamide.
- esters such as styrene, alkyl butyl ether, acetic acid buyl, alitrononitrile, metataronitrile, N-buluformamide, N-bulucetamide, bulupyrrolidone, maleic acid, fumaric acid, itaconic acid, etc.
- Any polymer that can be copolymerized such as (A) water having a acidity of 400 mgK0H / g to 700 mgKOH / g and a pH of 6.5 or less It is essential to be soluble in water-soluble organic solvents having a boiling point of 95 ° C to 180 ° C.
- the (A) matrix polymer of the present embodiment is included in the polymer to improve sensitivity.
- a double bond is preferably introduced.
- it may be a polymer in which a double bond is added by reacting a carboxyl group in a polyacrylic acid or copolymer polymer with an unsaturated epoxy monomer glycidyl methacrylate.
- the carboxyl group of the matrix polymer can be reacted with the methylol group and alkoxy group of N-methylol (meth) acrylamide and N-alkoxy (meth) acrylamide to introduce a double bond.
- the unsaturated epoxy monomer to be reacted with the carboxyl group glycidinoleate, glycidyl methacrylate, allyl glycidyl ether, ⁇ -ethyl glycidyl ether, crotonyl glycidyl ether, itaconic acid monoalkyl ester monoglycidyl And esters, alicyclic epoxy group-containing unsaturated compounds (3,4-epoxycyclohexylmethyl (meth) acrylate), and the like. These can be used alone or in combination of two or more. By using such (i) matrix polymer, organic substances can be efficiently removed during firing when forming the metal pattern.
- the other photosensitive component (i) crosslinkable monomer has at least one polymerizable ethylenically unsaturated group in the molecule.
- Specific examples include monofunctional butyl monomers and polyfunctional vinyl monomers.
- Monofunctional butyl monomers include (meth) atalinoleamide and methylol (meth) atalinoleamide.
- acrylic acid maleic acid, maleic anhydride, itaconic acid, itaconic anhydride, citraconic acid, citraconic anhydride, crotonic acid, 2-acryloylamide 2-methylpropanesulfonic acid, tert-butylacrylamidesulfonic acid Is particularly preferable because it improves the metal adsorption rate.
- a polyfunctional monomer that is a condensate of (bl) a polyhydric alcohol and N-methylol (meth) acrylamide is particularly useful.
- the polyhydric alcohol is water-soluble by itself. Is more useful in terms of improving developability.
- the component (bl) include a condensate of pentaerythritol and N-methylolacrylamide (NMA).
- NMA N-methylolacrylamide
- the combination with polyethylene glycol ditalylate is particularly good in terms of improving developability. Showed a good result. That is, it is more preferable to use polyethylene glycol diatalate as the component (b2).
- the blending amount of (bl) polyfunctional monomer is 10 to 50 parts by mass, and (b2) polyfunctional (meth) atari.
- the combined amount of the rate is preferably 5 to 23 parts by mass.
- the blending amount of (bl) polyfunctional monomer is 15 to 45 parts by weight, and (b2) the blending amount of polyfunctional (meth) acrylate is 5 to 20 parts by weight. It is particularly preferred.
- photopolymerization initiator As the photopolymerization initiator, conventionally known photopolymerization initiators such as benzophenone, 2, 4, 6 trimethylbenzophenone, 2-hydroxy-4-alkoxybenzophenone, N, ⁇ '—tetramethylenole 4, 4' — Diaminobenzophenone (Michler's ketone), ⁇ , N '— Tetraethynole 4, A' — Diaminobenzophenone, 4-methoxy monodimethylaminobenzophenone, (2 — Atalloy oxy) (4 Benzylbenzyl) dimethylammonium Benzophenone derivatives such as mubromide, benzyl derivatives such as benzoin, benzoin isopropyl ether, benzoin methyl ether, benzoin ethyl ether, benzoin isobutyl ether, benzoin phenyl ether, benzyl, dibenzyl, benzyl dipheny
- Anthraquinone derivatives 9-phenyl, atalidine, 1,7-bis (9,9'-atharidinyl) heptane and other atalidine derivatives, acetophenone, 2,2-diethoxyacetophenone, phenanthrenequinone, 2, 4, 6_trimethylbenzoyldiphenylphosphine oxide, bis (2, 4, 6_trimethylbenzoyl) phenylphosphine oxide, bis (2,6-dimethoxybenzoyl) 1, 2, 4, 4, —Trimethyl monopentylphosphine oxide, oligo
- the blending amount of ( ⁇ ) matrix polymer is 20 for the total amount of ( ⁇ ) matrix polymer, ( ⁇ ) crosslinkable monomer, and (C) photopolymerization initiator. 80 parts by mass from 80 parts by mass are preferred, and 30 to 70 parts by mass are more preferred.
- the compounding amount of the ( ⁇ ) crosslinkable monomer in the pattern forming material of the present embodiment is as follows: ( ⁇ ) Matrix polymer, ( ⁇ ) Crosslinkable monomer, (C) Photopolymerization initiator in a total amount of 100 parts by mass. It is preferably 15 to 73 parts by mass, more preferably 30 to 70 parts by mass.
- the blending amount of (ii) the crosslinkable monomer exceeds 80 parts by mass, the coating property to the substrate is deteriorated.
- the photocured product becomes hard and brittle, and sufficient adhesion to the substrate cannot be obtained.
- a polyfunctional monomer which is a condensate of cornole and N-methylol (meth) acrylamide is preferred, and as this polyfunctional monomer, polyethylene glycol ditalylate is more preferable for improving sensitivity.
- the blending amount of the (C) photopolymerization initiator in the pattern forming material of the present embodiment is based on 100 parts by mass of the total amount of (A) matrix polymer, (B) crosslinkable monomer, and (C) photopolymerization initiator. 0.05 to 10 parts by mass is preferred 0.3 to 7 parts by mass is more preferred. If the blending amount of the (C) photopolymerization initiator is too small, the sensitivity becomes low, and if it is too much, it will precipitate and the resolution of the pattern after exposure will be extremely lowered. Depending on the type of initiator, it becomes a light-absorbing compound after the photoreaction, so that light absorption on the exposed surface of the photosensitive resist composition layer increases and photocuring may be insufficient.
- the pattern forming material of the present embodiment includes (A) a matrix polymer, (B) a crosslinkable monomer, (C) a photopolymerization initiator as a main component, and if necessary, a thermal polymerization initiator, Furthermore, P-dimethylaminobenzoate, p-dimethylaminobenzoate isoamyl, N, N-dimethylethanolamine, N-methyljetanolamine, triethanolamine, etc. as leveling agents, Colorants such as color formers, dyes and pigments, fillers, adhesion-imparting agents, plasticizers and the like may be added. In addition, there is no restriction
- Thermal polymerization inhibitors include, for example, hydroquinone, methylhydroquinone, hydrone quinone monomethyl ether, quinone derivatives such as p-benzoquinone, 2, 6_di-tert-butyl-1-p-cresol, catechol, tert-butyl
- Known thermal polymerization inhibitors such as phenol derivatives such as catechol and pyrogallol and hindered amines can be used.
- each raw material is dissolved in a known organic solvent to form a coating solution, which is obtained by coating and drying using means such as a spinner, a flow coater, a roll coater, and the like.
- a coating solution which is obtained by coating and drying using means such as a spinner, a flow coater, a roll coater, and the like.
- Such an organic solvent is preferably The following solvents are mentioned.
- thermal polymerization inhibitor in order to ensure stability, a small amount of a thermal polymerization inhibitor is usually added to the crosslinkable monomer.
- the blending amount of the thermal polymerization inhibitor in the pattern forming material of the present embodiment is 1 part by mass with respect to 100 parts by mass of the total amount of (A) matrix polymer, (B) crosslinkable monomer, and (C) photopolymerization initiator. The following is preferable. More preferably, the content is about 0.01 to 1 part by mass. [0068]
- the reason for being limited to the water-soluble organic solvent having a boiling point of 95 ° C to 180 ° C in the pattern forming material in the present embodiment is that the boiling point is lower than 95 ° C.
- a solvent selected from this boiling temperature range is used as the main component of the water-soluble organic solvent, and a low-boiling solvent or a high-boiling solvent may be added to adjust the viscosity as long as the coating property is not impaired. Nare ,.
- the pattern forming material of the present embodiment is applied by adding other components as necessary, and dried at a predetermined temperature.
- the pattern is immersed in an aqueous solution of a noble metal compound, and the noble metal ion or noble metal complex ion in the aqueous solution is ionically bonded to the carboxyl group or sulfonic acid group present in the pattern forming material ( A metal-containing pattern is produced by chemical adsorption. Finally, the metal-containing pattern is baked at 450 ° C. to 600 ° C., and the organic component is burned to produce a metal pattern or a metal oxide pattern.
- the pattern forming material is applied by spin coater, roll coater, curtain flow coater, spray coater, dip coater, bar coater, tape. It can be applied by Le Coater coating or the like, and any method may be used.
- any of an ultra-high pressure mercury lamp, a chemical lamp, a black light, an arc lamp, and the like may be selected as an exposure lamp that emits a wavelength that matches the absorption wavelength of the initiator.
- the developing method may be any of a spray method, a dip method, and a shower method.
- the metal compound adsorbed on the pattern may be any water-soluble compound of a divalent or higher metal.
- the amount of discarded metal is reduced, so that a metal pattern can be formed at a low cost.
- the noble metal compound used as the aqueous solution includes chloroplatinic acid, hexammineplatinum (IV) tetrachloride, dinitrodiammineplatinum (II) nitric acid, tetraammineplatinum dichloride, tetraammineplatinum hydrochloride, hexammineplatinum water.
- Acid salt tetraamminepalladium chloride, tetraamminepalladium hydrochloride, sodium chloride iridium hydrate, rhodium chloride, nitrate nitrate, silver nitrate, silver cyanide, chloroauric acid, potassium gold cyanide, secondary cyanide
- gold-powered rhodium, chloroauric acid, hexaclonal iridium (IV) acid, and the like can be used singly or in combination of two or more.
- the noble metal compound to be used in the aqueous solution is not limited to the compounds listed here, nor is it intended to limit the concentration of the noble metal compound, the temperature of the aqueous solution, or the like.
- the acid value of the solid content of the mixture of the above three components (B) crosslinkable monomer and (C) photopolymerization initiator is important.
- the acid value in this case is preferably in the range of 150 mgKH / g to 350 mgKH / g, more preferably in the range of 220 mgKH / g to 300 mgKH / g.
- the acid value is too high, the development resistance is inferior and the film thickness of the pattern during development is reduced, resulting in a decrease in the amount of chemical adsorption as well.
- N-methylolacrylamide In an oil bath set at 88 ° C, 202 g of N-methylolacrylamide and the polymerization inhibitor 4-hydroxy 2, 2, 6, 6 tetramethylpiperidine N-oxyl 1. Og force S separable The flask was set and N-methylol attalinoleamide was melted with gentle stirring. In order to promote dissolution of N-methylolacrylamide, a non-alcohol solvent such as methyl ethyl ketone may be added.
- a non-alcohol solvent such as methyl ethyl ketone
- FIG. 1 is a graph showing the results of measurement using gel permeation chromatography (trade name GPC SYSTEM-1 manufactured by Shodex). The measurement conditions at this time are as follows. The results are shown in Table 1.
- FIGS. 2 and 3 are diagrams showing the results when measurement was performed using a mass spectrometer (trade name FINNIGAN LC Q DUO, manufactured by Thermo Quest).
- the measurement conditions at this time are as follows.
- Ionization method APCI posi & ESI posi
- Example 1 tailing was observed, and it was observed that the developability was slightly inferior, but it was within a usable range.
- Example 2 When the same operation as in Example 1 was performed using the above composition 2 solution, the developability was good. As a result, also in Example 2, a dense platinum film similar to that in Example 1 was observed.
- Example 1 When the same operation as in Example 1 was performed using the above-mentioned composition 3 liquid, the developability was good. As a result, a dense platinum film was observed as in Example 1.
- Example 1 the pattern was produced under the same conditions except that the pH of the developing water was 7.2.
- the film quality of the produced platinum was not dense and was not suitable for use.
- the metal pattern is formed only in necessary pattern portions without using expensive noble metal in unnecessary portions by the method of forming the metal pattern of the present embodiment. It is possible to form a metal pattern formation method that can be formed and saves material and cost. In addition, as described above, since a stable metal film thickness can be obtained at all times, a metal pattern with good quality can be provided.
- the metal wiring as the metal pattern may require various thicknesses in some cases.
- the pattern can be formed with a thickness of 0.1 ⁇ m force to 1000 ⁇ m, and in some cases it can be formed to a thickness greater than that force. Is time-consuming for firing, which is realistic in manufacturing.
- the thickness of the patterned photosensitive layer is from 0.1 111 to 5 111, preferably from 0.5 111 to 2 111.
- the amount of precious metal or precious metal compound adsorption is determined by the pattern forming material.
- the ability to control even the acid value of the composition may be controlled by changing the film thickness.
- the present invention is advantageous for forming a dense metal pattern of a thin film.
- a dense noble metal pattern can be produced at low cost.
- a photosensitive material is prepared using a polymer and a monomer having a carboxyl group or a sulfonic acid group, a coating process, a drying process, a light irradiation process through a mask. Then, the pattern patterned through the development process is immersed in an aqueous solution of a cationic noble metal compound, and the metal-containing pattern is prepared by chemically adsorbing the cationic noble metal compound to the pattern, and then firing the metal-containing pattern.
- a good metal pattern can be formed by a method for producing a noble metal pattern. We were able to identify and produce a photosensitive material as the optimum pattern forming material used to form this metal pattern.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007500444A JPWO2006080178A1 (ja) | 2005-01-27 | 2005-12-28 | 金属パターン形成材料、架橋性モノマー、及び金属パターンの形成方法 |
US11/883,063 US20080119581A1 (en) | 2005-01-27 | 2005-12-28 | Material for Metallic-Pattern Formation, Crosslinking Monomer, and Method of Forming Metallic Pattern |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005020280 | 2005-01-27 | ||
JP2005-020280 | 2005-01-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006080178A1 true WO2006080178A1 (ja) | 2006-08-03 |
Family
ID=36740211
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/024140 WO2006080178A1 (ja) | 2005-01-27 | 2005-12-28 | 金属パターン形成材料、架橋性モノマー、及び金属パターンの形成方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20080119581A1 (ja) |
JP (1) | JPWO2006080178A1 (ja) |
KR (1) | KR20070089249A (ja) |
CN (1) | CN101111471A (ja) |
TW (1) | TW200700913A (ja) |
WO (1) | WO2006080178A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007031372A (ja) * | 2005-07-28 | 2007-02-08 | Shin Etsu Polymer Co Ltd | 多官能アクリルアミドモノマーおよびその製造方法、導電性高分子塗料、導電性塗膜 |
JP2007189026A (ja) * | 2006-01-12 | 2007-07-26 | Tokyo Ohka Kogyo Co Ltd | 金属パターン形成材料及び金属パターンの形成方法 |
JP2008214749A (ja) * | 2007-02-07 | 2008-09-18 | Kimoto & Co Ltd | 無電解メッキ形成材料、触媒付着用塗布液、無電解メッキ形成方法、およびメッキ方法 |
JP2012144761A (ja) * | 2011-01-07 | 2012-08-02 | Fujifilm Corp | 被めっき層形成用組成物、金属膜を有する積層体の製造方法 |
JPWO2016159136A1 (ja) * | 2015-03-31 | 2018-02-22 | 富士フイルム株式会社 | 被めっき層形成用組成物、被めっき層前駆体層付きフィルム、パターン状被めっき層付きフィルム、導電性フィルム、タッチパネル |
WO2019187644A1 (ja) * | 2018-03-26 | 2019-10-03 | 富士フイルム株式会社 | 前駆体フィルム、被めっき層付き基板、導電性フィルム、タッチパネルセンサー、タッチパネル、導電性フィルムの製造方法、および被めっき層形成用組成物 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9228039B2 (en) * | 2013-11-20 | 2016-01-05 | Eastman Kodak Company | Crosslinkable reactive polymers |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002249471A (ja) * | 2000-12-19 | 2002-09-06 | Sanyo Chem Ind Ltd | エステルの製造方法 |
JP2003228166A (ja) * | 2002-02-05 | 2003-08-15 | Tokyo Ohka Kogyo Co Ltd | ネガ型感光性樹脂組成物 |
JP2004205622A (ja) * | 2002-12-24 | 2004-07-22 | Konica Minolta Holdings Inc | 感光性組成物、感光性平版印刷版材料及び画像形成方法 |
JP2004333672A (ja) * | 2003-05-02 | 2004-11-25 | Kanegafuchi Chem Ind Co Ltd | 貯蔵安定性の良い感光性樹脂組成物及び感光性ドライフィルムレジスト、並びにその利用 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US200301A (en) * | 1878-02-12 | James e |
-
2005
- 2005-12-28 JP JP2007500444A patent/JPWO2006080178A1/ja not_active Withdrawn
- 2005-12-28 WO PCT/JP2005/024140 patent/WO2006080178A1/ja not_active Application Discontinuation
- 2005-12-28 US US11/883,063 patent/US20080119581A1/en not_active Abandoned
- 2005-12-28 CN CNA2005800472196A patent/CN101111471A/zh active Pending
- 2005-12-28 KR KR1020077017054A patent/KR20070089249A/ko not_active Application Discontinuation
-
2006
- 2006-01-06 TW TW095100654A patent/TW200700913A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002249471A (ja) * | 2000-12-19 | 2002-09-06 | Sanyo Chem Ind Ltd | エステルの製造方法 |
JP2003228166A (ja) * | 2002-02-05 | 2003-08-15 | Tokyo Ohka Kogyo Co Ltd | ネガ型感光性樹脂組成物 |
JP2004205622A (ja) * | 2002-12-24 | 2004-07-22 | Konica Minolta Holdings Inc | 感光性組成物、感光性平版印刷版材料及び画像形成方法 |
JP2004333672A (ja) * | 2003-05-02 | 2004-11-25 | Kanegafuchi Chem Ind Co Ltd | 貯蔵安定性の良い感光性樹脂組成物及び感光性ドライフィルムレジスト、並びにその利用 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007031372A (ja) * | 2005-07-28 | 2007-02-08 | Shin Etsu Polymer Co Ltd | 多官能アクリルアミドモノマーおよびその製造方法、導電性高分子塗料、導電性塗膜 |
JP2007189026A (ja) * | 2006-01-12 | 2007-07-26 | Tokyo Ohka Kogyo Co Ltd | 金属パターン形成材料及び金属パターンの形成方法 |
JP2008214749A (ja) * | 2007-02-07 | 2008-09-18 | Kimoto & Co Ltd | 無電解メッキ形成材料、触媒付着用塗布液、無電解メッキ形成方法、およびメッキ方法 |
JP2012144761A (ja) * | 2011-01-07 | 2012-08-02 | Fujifilm Corp | 被めっき層形成用組成物、金属膜を有する積層体の製造方法 |
JPWO2016159136A1 (ja) * | 2015-03-31 | 2018-02-22 | 富士フイルム株式会社 | 被めっき層形成用組成物、被めっき層前駆体層付きフィルム、パターン状被めっき層付きフィルム、導電性フィルム、タッチパネル |
WO2019187644A1 (ja) * | 2018-03-26 | 2019-10-03 | 富士フイルム株式会社 | 前駆体フィルム、被めっき層付き基板、導電性フィルム、タッチパネルセンサー、タッチパネル、導電性フィルムの製造方法、および被めっき層形成用組成物 |
CN111936665A (zh) * | 2018-03-26 | 2020-11-13 | 富士胶片株式会社 | 前体薄膜、附被镀覆层基板、导电性薄膜、触摸面板传感器、触摸面板、导电性薄膜的制造方法及被镀覆层形成用组合物 |
JPWO2019187644A1 (ja) * | 2018-03-26 | 2021-02-25 | 富士フイルム株式会社 | 前駆体フィルム、被めっき層付き基板、導電性フィルム、タッチパネルセンサー、タッチパネル、導電性フィルムの製造方法、および被めっき層形成用組成物 |
JP7041740B2 (ja) | 2018-03-26 | 2022-03-24 | 富士フイルム株式会社 | 前駆体フィルム、被めっき層付き基板、導電性フィルム、タッチパネルセンサー、タッチパネル、導電性フィルムの製造方法、および被めっき層形成用組成物 |
US11561631B2 (en) | 2018-03-26 | 2023-01-24 | Fujifilm Corporation | Precursor film, substrate with plated layer, conductive film, touch panel sensor, touch panel, method for producing conductive film, and composition for forming plated layer |
Also Published As
Publication number | Publication date |
---|---|
JPWO2006080178A1 (ja) | 2008-06-19 |
US20080119581A1 (en) | 2008-05-22 |
KR20070089249A (ko) | 2007-08-30 |
CN101111471A (zh) | 2008-01-23 |
TW200700913A (en) | 2007-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006080178A1 (ja) | 金属パターン形成材料、架橋性モノマー、及び金属パターンの形成方法 | |
TWI326005B (ja) | ||
KR102174783B1 (ko) | 수지 경화막 패턴의 형성 방법, 감광성 수지 조성물, 감광성 엘리먼트, 터치패널의 제조 방법 및 수지 경화막 | |
TWI636329B (zh) | 感光性樹脂組成物、感光性元件及抗蝕劑圖案的形成方法 | |
TWI430029B (zh) | A photosensitive resin composition, a photosensitive member, a method for forming a photoresist pattern, and a method for manufacturing a printed circuit board | |
WO2007097306A1 (ja) | 感光性樹脂組成物、レジストパターンの形成方法、プリント配線板の製造方法及びプラズマディスプレイパネル用基板の製造方法 | |
TW201013310A (en) | Photosensitive resin composition, photosensitive element, resist pattern manufacturing method, and printed circuit board manufacturing method | |
JP5393087B2 (ja) | ガラスエッチング用感光性樹脂組成物及び被加工ガラス基板の製造方法 | |
TW201007360A (en) | Photosensitive resin composition, photosensitive element wherein same is used, method for forming a resist-pattern, and method for producing a printed wiring board | |
KR102172096B1 (ko) | 감광성 수지 조성물, 감광성 엘리먼트, 레지스터 패턴의 형성 방법 및 터치 패널의 제조 방법 | |
CN101776845A (zh) | 感光性树脂组合物以及被蚀刻基体的制造方法 | |
JP4117873B2 (ja) | ネガ型感光性樹脂組成物 | |
TWI584071B (zh) | Negative photosensitive resin composition | |
TWI262360B (en) | Light sensitive film for forming circuit and method for manufacturing printed circuit board | |
JP5397681B2 (ja) | 感光性樹脂組成物、感光性エレメント、及びプリント配線板の製造方法 | |
JP4752840B2 (ja) | 感光性樹脂組成物、感光性エレメント、及びプリント配線板の製造方法 | |
WO2007034610A1 (ja) | 感光性樹脂組成物、感光性エレメント、レジストパターンの形成方法、プリント配線板の製造方法、及び、プラズマディスプレイの隔壁形成方法 | |
WO2007113901A1 (ja) | 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法 | |
TW201807489A (zh) | 感光性樹脂組成物、感光性樹脂薄膜、硬化物的製造方法、積層體及電子零件 | |
TWI529486B (zh) | 感光性樹脂組成物、感光性元件、光阻圖型之製造方法及印刷配線板之製造方法 | |
JP6697125B2 (ja) | 9−フェニルアクリジン大分子類光増感剤及びその製造方法、ならびに使用 | |
TW201401965A (zh) | 基板之光成像方法 | |
JP4708194B2 (ja) | 金属パターン形成材料及び金属パターンの形成方法 | |
JP5304970B1 (ja) | タッチパネル用電極の保護膜の形成方法、感光性樹脂組成物、感光性エレメント、タッチパネルの製造方法及びタッチパネル用電極の保護膜 | |
JP5275596B2 (ja) | 光硬化性樹脂組成物及びパターン形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2007500444 Country of ref document: JP Ref document number: 1020077017054 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11883063 Country of ref document: US Ref document number: 200580047219.6 Country of ref document: CN |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 05844890 Country of ref document: EP Kind code of ref document: A1 |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 5844890 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 11883063 Country of ref document: US |