WO2006025452A1 - イオンビーム照射装置およびイオンビーム照射方法 - Google Patents
イオンビーム照射装置およびイオンビーム照射方法 Download PDFInfo
- Publication number
- WO2006025452A1 WO2006025452A1 PCT/JP2005/015919 JP2005015919W WO2006025452A1 WO 2006025452 A1 WO2006025452 A1 WO 2006025452A1 JP 2005015919 W JP2005015919 W JP 2005015919W WO 2006025452 A1 WO2006025452 A1 WO 2006025452A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- ion source
- ion beam
- ion
- beam irradiation
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 143
- 238000000034 method Methods 0.000 title claims description 26
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims description 136
- 239000004020 conductor Substances 0.000 claims description 34
- 238000009826 distribution Methods 0.000 claims description 29
- 230000008569 process Effects 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 128
- 238000005259 measurement Methods 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010962 carbon steel Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20214—Rotation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31732—Depositing thin layers on selected microareas
Definitions
- the present invention relates to an ion beam irradiation apparatus and an ion beam irradiation method for irradiating a substrate to be processed with an ion beam and processing the substrate.
- this apparatus and method for example, in the production of a liquid crystal display, the alignment film formed on the surface of the substrate for liquid crystal display is subjected to an alignment treatment, or the alignment film is formed on the surface of the substrate for liquid crystal display. At the same time, it is used for performing an alignment treatment on the alignment film.
- JP-A-9 218408 (paragraphs 0011, 0012, FIG. 1) (hereinafter referred to as Patent Document 1) specifies an ion beam on an alignment film formed on the surface of a substrate for a liquid crystal display. Describes a technique for performing an alignment process (that is, a process for aligning liquid crystal molecules in a predetermined direction) on the alignment film by making it incident at an incident angle of.
- JP 2002-62532 A (paragraphs 0018, 0019, FIG. 2,
- FIG. 4 (hereinafter referred to as Patent Document 2) refers to an ion beam on a substrate surface by reciprocating the substrate in parallel with the substrate surface with respect to an ion source arranged at a predetermined angle with respect to the substrate. , Thereby forming an alignment film for a liquid crystal display on the substrate surface and performing an alignment treatment on the alignment film.
- Patent Document 1 Japanese Patent Laid-Open No. 9-218408
- Patent Document 2 JP 2002-62532 A
- the ion beam irradiation conditions are often changed in order to cope with various types.
- the incident angle of the ion beam to the substrate surface is one of the irradiation conditions.
- Patent Document 2 does not describe a specific structure for changing the incident angle of an ion beam.
- the ion source is fixed to a support provided inside the vacuum vessel.
- the structure of the support must be changed when changing the incident angle, and the vacuum capacity is changed. It is not easy to change the incident angle because the instrument must be opened.
- the ion source 2 having a rotating shaft 8 that reciprocally rotates the ion source 2 as indicated by an arrow A at the side portion of the ion source 2 is a vacuum vessel.
- the vacuum vessel must be opened. Therefore, it is not easy to change the incident angle ⁇ of the ion beam 4 on the substrate 6.
- the rectangular substrate 6 has a width W in the Y direction.
- the substrate 6 is reciprocated in the X direction substantially orthogonal to the Y direction.
- the rotational center force of the ion source 2 that is, the central axis 8 a of the rotational shaft 8 is located in the ion source 2. Therefore, when the ion source 2 is rotated to change the incident angle ⁇ , the irradiation position of the ion beam 4 onto the substrate 6 greatly varies depending on the incident angle ⁇ , as shown in FIG. As a result, the irradiation position of the ion beam 4 onto the substrate 6 becomes farther as the incident angle ⁇ decreases, so the apparatus must be enlarged. In addition, as in the example shown in FIG. 8, the irradiation region S, S.
- the size of also changes greatly.
- the irradiation area becomes larger as the incident angle ⁇ is reduced.
- the driving distance (scanning width) in the X direction of the substrate 6 must be increased. Therefore, the apparatus is also increased in size, and the throughput of the apparatus decreases as the substrate processing time increases.
- the main object of the present invention is to provide an ion beam irradiation apparatus and an ion beam irradiation method using the ion beam irradiation apparatus that can suppress the displacement of the irradiation position and the spread of the irradiation region even when the ion beam is reduced.
- An ion beam irradiation apparatus includes a vacuum container that is evacuated to vacuum, and an ion that is provided in the vacuum container and irradiates a substrate to be processed with a wider ion beam.
- a source a substrate driving mechanism for driving the substrate in the vacuum vessel in a direction substantially perpendicular to the width direction of the ion beam drawn from the ion source, and penetrating the vacuum vessel.
- a reciprocating motor, and the ion source is rotatably supported around the central axis of the rotating shaft.
- the center axis of the rotation axis is located away from the ion source force substrate, and the ion source rotates around the center axis. Therefore, even when the incident angle is small, the center axis is Compared to the case of being located in the on-source, the shift of the irradiation position of the ion beam to the substrate and the spread of the irradiation region of the ion beam to the substrate can be suppressed.
- the distance between the central axis of the rotating shaft and the surface of the substrate is equal to or less than half the width of the outlet side of the ion source and the width of the ion source in the rotating direction. (Lower limit is 0).
- the rotating shaft and the arm are formed of a hollow magnetic material, have a magnetic shielding function and are grounded, and a conductor for supplying power to the ion source from the outside of the vacuum vessel, You may pass through the inside of the said rotating shaft and an arm.
- the beam measuring device may be provided at a position facing the ion source positioned at an angle substantially perpendicular to the substrate.
- the ion source is opposed to the beam measurement device in the ion beam irradiation method using the ion beam irradiation device provided with the beam measurement device.
- the substrate driving mechanism is characterized in that the substrate is irradiated with an ion beam from the ion source to process the substrate while the substrate is driven by the substrate driving mechanism.
- the angle of the ion source can be easily adjusted to a desired value from the outside of the vacuum vessel. If necessary, move the ion source to the measurement position, measure the current density distribution of the ion beam, evaluate it, and make the necessary adjustments.
- the substrate can be processed by moving to. As a result, it becomes easy to perform stable processing.
- the ion source that opens the vacuum vessel is rotated around the central axis of the rotating shaft from outside the vacuum vessel.
- the incident angle of the ion beam to the substrate can be easily changed.
- the center axis of the rotation axis is also located away from the ion source force substrate, and the ion source rotates around the center axis. Therefore, even when the incident angle is reduced, the displacement of the ion beam irradiation position on the substrate and the spread of the ion beam irradiation region on the substrate are reduced. Can be kept small. As a result, it is possible to reduce the size of the device and to suppress a reduction in the throughput of the device.
- the substrate can be processed easily and efficiently at a desired incident angle.
- the central axis of the rotation axis is positioned close to the substrate surface as described above, so even when the incident angle is reduced, the displacement of the irradiation position of the ion beam on the substrate and the ion beam on the substrate are reduced.
- the spread of the irradiation area of the system can be further reduced.
- the apparatus can be further downsized, and the decrease in the current density of the ion beam on the substrate surface when the incident angle is reduced can be further suppressed.
- the conductor Passes through the inside of the rotating shaft and arm with the magnetic shield function, so that leakage of the magnetic field generated by the current flowing through the conductor is suppressed, and the magnetic field does not adversely affect the ion beam from which the ion source force is also extracted.
- the current density distribution of the ion beam extracted from the ion source can be prevented from being disturbed.
- the current density distribution in the width direction of the ion beam from which the ion source force positioned at a predetermined angle with respect to the substrate is also drawn can be measured by the beam measuring instrument. As a result, the measurement result can be used for evaluating the characteristics of the ion beam and adjusting the ion source.
- the beam measuring instrument since the beam measuring instrument is provided at a position facing the ion source positioned at an angle substantially perpendicular to the substrate, it is close to the ion source.
- the beam measuring instrument can be positioned and the force can be easily made to make the ion beam incident on the beam measuring instrument almost perpendicularly, so that the accuracy of measurement by the beam measuring instrument can be improved. Play.
- the angle of the external force ion source of the vacuum vessel can be easily adjusted to a desired value, for example, for each substrate or each lot of substrates, as necessary. Then, the ion source is moved to the measurement position, and the current density distribution of the ion beam is measured and evaluated, and after making the necessary adjustments, the substrate can be processed by moving the ion source to the processing position. . As a result, it becomes easy to perform stable processing.
- FIG. 1 is a longitudinal sectional view showing an embodiment of an ion beam irradiation apparatus according to the present invention.
- FIG. 2 is a longitudinal sectional view showing the apparatus of FIG.
- FIG. 3 is a longitudinal sectional view showing a more specific example of the beam measuring device in FIGS. 1 and 2.
- FIG. 4 (a) is a side view showing a simplified example of an incident state of an ion beam on the substrate surface when the central axis of the rotation axis for rotating the ion source is far from the substrate surface force.
- FIG. 4 (b) is a side view showing a simplified example of an incident state of an ion beam on the substrate surface when the central axis of the rotation axis for rotating the ion source is close to the substrate surface force.
- FIG. 5 is a side view showing the relationship between the width on the outlet side of the ion source and the position of the central axis of the rotation axis for rotating the ion source.
- FIG. 6 is a side view showing an example in which the center axis of the ion source is also shifted from the center axis of the arm.
- FIG. 7 is a side view showing an example when the rotational center force of the ion source is located in the S ion source.
- FIG. 8 is a plan view showing an example of a relationship between a substrate and an ion beam applied to the surface of the substrate. Explanation of symbols
- FIG. 1 is a longitudinal sectional view showing an embodiment of an ion beam irradiation apparatus according to the present invention.
- FIG. 2 is a longitudinal sectional view showing the apparatus of FIG. 1 as viewed from the right. Portions that are the same as or equivalent to those in the examples shown in FIGS. 7 and 8 are given the same reference numerals, and differences from the examples will be mainly described below.
- This ion beam irradiation apparatus includes a vacuum vessel 10 that is evacuated to a vacuum, and an ion source 2 provided inside the vacuum vessel 10.
- the ion source 2 irradiates a substrate 6 to be processed with a wider ion beam 4.
- the shape of the substrate 6 is not limited to a specific one. For example, when the planar shape of the substrate 6 is a rectangle that is long in the X direction and short in the Y direction as shown in FIG. 8, the ion source 2 is wider than the width W of the short side (ie, in the Y direction). Ion beam 4 is irradiated. That
- the ion source 2 has a shape close to a rectangular parallelepiped long in the Y direction.
- the ion source 2 emits an ion beam 4 having a rectangular cross-sectional shape that is short in the X direction and long in the Y direction, as shown in FIG.
- the width of the ion beam 4 refers to the width in the Y direction.
- the substrate 6 is a flat substrate for a liquid crystal display, for example. In that case, it may be formed in advance on the surface of the substrate 6 before the alignment treatment with the alignment film force S ion beam 4. An alignment film may be formed on the surface of the substrate 6 by irradiation with the on-beam 4 and the alignment film may be subjected to an alignment treatment.
- the substrate 6 is further straightened in the X direction substantially orthogonal to the width direction (ie, the Y direction) of the ion beam 4 drawn from the ion source 2 in the vacuum vessel 10.
- a substrate driving mechanism 30 for driving the target is provided.
- the driving of the substrate 6 by the substrate driving mechanism 30 may be driven in one direction, but the reciprocating driving is preferable because the irradiation amount of the ion beam 4 to the substrate 6 is increased.
- reciprocal driving is performed. Further, the driving speed of the substrate 6 when the ion beam 4 is incident on the substrate 6 is kept constant.
- the substrate drive mechanism 30 includes a plate-like substrate support 32 that supports the substrate 6, a plurality of rollers 34 arranged in two rows, and a motor 36.
- the rollers 34 arranged in a plurality of two rows support both ends of the substrate support 32 in the Y direction.
- the motor 36 is provided outside the vacuum vessel 10 and rotates a predetermined roller 34 back and forth as shown by an arrow D (see FIG. 2) via a rotating shaft 38.
- the roller 34 to which the rotary shaft 38 is coupled and the other roller 34 are connected by, for example, a chain, a belt, and the like so as to rotate together.
- a bearing 40 having a vacuum sealing function is provided in a portion where the rotary shaft 38 penetrates the vacuum vessel 10.
- the substrate drive mechanism 30 is not limited to the configuration of this example.
- the substrate 6 may be directly supported by the roller 34 without using the substrate support 32 and slid on the roller 34 to be reciprocated.
- a tray-like substrate support 32 may be used.
- a linear drive device for example, an air cylinder
- reciprocating linear movement of the plate-like or tray-like substrate support 32 may be provided.
- the ion beam irradiation apparatus further includes a rotating shaft 14, an arm 12, and a motor 22.
- the rotating shaft 14 penetrates the vacuum vessel 10, and its central axis 14 a is located away from the ion source 2 toward the substrate 6 and is substantially parallel to the surface 6 a of the substrate 6 and the Y direction.
- the arm 12 is provided in the vacuum vessel 10 and supports the ion source 2 as well as the rotating shaft 14 force. (In other words, the rotating shaft 14 and the ion source 2 are connected in the vacuum vessel 10).
- the motor 22 is provided outside the vacuum vessel 10 and reciprocally rotates the rotary shaft 14 as indicated by an arrow B. With such a configuration, the ion source 2 is supported in the vacuum vessel 10 so as to be rotatable around the central axis 14a of the rotary shaft 14 as indicated by an arrow B.
- the rotating shaft 14 and the arm 12 are provided on both sides of the ion source 2 in the Y direction in this example. In this way, the ion source 2 can be stably supported by both side forces. However, it is not limited to this.
- the rotating shaft 14 and the arm 12 may be provided only on one side of the ion source 2.
- a bearing 16 having a vacuum sealing function is provided at a portion where each rotary shaft 14 penetrates the vacuum vessel 10.
- Each arm 12 is L-shaped in this example. Each arm 12 supports the ion source 2 substantially parallel to the central axis 14a of the rotating shaft 14 with its exit (extraction port for the ion beam 4) facing the substrate 6 side.
- the motor 22 is reciprocally rotatable as shown by an arrow C (see FIG. 2).
- the rotational force is applied to the pulley 26 attached to the rotary shaft 24 of the motor 22, the pulley 18 attached to one rotary shaft 14, and the belt 20 suspended between the pulleys 18 and 26. Via the rotation shaft 14.
- the transmission mechanism of the rotational force of the motor 22 may be other than this example.
- a timing belt or a gear may be used.
- a motor 22 having a low rotational speed may be used and directly coupled to the rotary shaft 14.
- the rotating shaft 14 and the arm 12 may be solid or may be hollow as in this embodiment. This will be described later.
- the ion source 2 that opens the vacuum container 10 from the outside of the vacuum container 10 is moved around the central axis 14 a of the rotating shaft 14. Rotate around the center. Therefore, the incident angle ⁇ of the ion beam 4 on the substrate 6 (see FIGS. 4, 5, and 7) can be easily changed.
- the center axis 14a of the rotating shaft 14 is located away from the ion source 2 toward the substrate 6, and the ion source 2 rotates around the center axis 14a. Therefore, even when the incident angle ⁇ is reduced, the irradiation position of the ion beam 4 on the substrate 6 is smaller than when the central axis 8a is located in the ion source 2 as in the example shown in FIG. Deviation and ion beam to substrate 6 The spread of the irradiation area of 4 can be kept small. As a result, it is possible to reduce the size of the apparatus and suppress a decrease in throughput of the apparatus.
- FIG. 4A shows an example in which the central axis 14a is positioned near the exit of the ion source 2
- FIG. 4B shows an example in which the central axis 14a is positioned near the substrate surface 6a.
- the distance L in the example of Fig. 4B is much smaller than in the example of Fig. 4A.
- the ion beam irradiation apparatus can be reduced in size accordingly.
- the ion beam 4 that also emits the ion source force tends to diverge due to the space charge effect or the like, the ion beam 4 toward the substrate surface 6a increases as the distance L increases.
- the irradiation area is expanded. Therefore, in the example of FIG. 4B, the spread of the irradiation region of the ion beam 4 can be suppressed. As a result, the driving distance (scanning width) in the X direction of the substrate 6 necessary for irradiating the entire surface of the substrate 6 with the ion beam 4 does not have to be increased so much. Therefore, from this viewpoint, it is possible to reduce the size of the apparatus, and it is possible to suppress a decrease in throughput of the apparatus by suppressing an increase in substrate processing time.
- the central axis 14a of the rotating shaft 14 be positioned near the substrate surface 6a.
- the central axis 14a if the central axis 14a is positioned near the substrate surface 6a, the lower part of the ion source 2 may hit the substrate surface 6a when the incident angle ⁇ is very small. . Therefore, in order to avoid this, it is necessary to lengthen the arm 12 and increase the distance between the ion source 2 and the center shaft 14a.
- the size of the ion source 2 (specifically, the outlet of the ion source 2)
- the distance L between the faces 6a is preferably in the range of 0 or more and W Z2 or less.
- the central axis 12a of the arm 12 and the central axis 2a of the ion source 2 are coincident, but the present invention is not limited to this.
- the center axis 2 a of the ion source 2 may be coupled while being shifted from the center axis 12 a of the arm 12 to the side opposite to the substrate 6. By doing so, the lower part of the ion source 2 hits the substrate surface 6a when a small incident angle is taken, so even if an ion source with the same width W is used, the upper
- the rotary shaft 14 and the arm 12 may be made hollow in this embodiment.
- the rotating shaft 14 is formed in a cylindrical shape
- the arm 12 is formed in a duct shape, and the insides of these 14 and 12 are communicated with each other.
- the ion source 2 side of the arm 12 is connected to the ion source 2.
- Inside the rotating shaft 14 (for example, the inside of the vicinity of the vacuum vessel 10), a vacuum sealing material 44 for vacuum sealing is provided inside the rotating shaft 14 (for example, the inside of the vicinity of the vacuum vessel 10), a vacuum sealing material 44 for vacuum sealing is provided.
- the rotating shaft 14 and the arm 12 are made of a magnetic material such as iron or carbon steel.
- the rotary shaft 14 and the arm 12 are electrically grounded.
- the vacuum vessel 10 is also electrically grounded.
- a conductor 42 that supplies electric power to the ion source 2 from the outside of the vacuum vessel 10 is led to the ion source 2 through the inside of the rotating shaft 14 and the arm 12.
- a conductor 42 that supplies electric power to the ion source 2 from the outside of the vacuum vessel 10 is led to the ion source 2 through the inside of the rotating shaft 14 and the arm 12.
- the conductor 42 may be passed only through the arm 12 on one side or the conductor 42 may be passed through the arm 12 etc. on both sides.
- This conductor 42 is, for example, a conductor for supplying filament power for heating the filament of the ion source 2 and an arc to the ion source 2.
- a current introduction terminal (not shown) having a vacuum sealing function is provided at a portion where these conductors 42 penetrate the vacuum sealing material 44.
- These conductors 42 are insulated and supported by spacers (not shown) provided at appropriate positions in the rotary shaft 14 and the arm 12.
- the conductor for supplying the power to the ion source 2 is routed in the vacuum vessel 10 as compared with the case where the ion source 2 is provided outside the vacuum vessel 10. Due to space limitations, it is necessary to perform the operation near the ion source 2. In such a case, the magnetic field generated by the current flowing through the conductor may adversely affect the ion beam 4. For example, the current density distribution of the ion beam 4 may be disturbed by changing the traveling direction of the ions constituting the ion beam 4. In particular, if the ion source 2 is a direct current discharge type that uses a hot filament for plasma generation, the filament current is large (for example, about 60 A), which may generate a strong magnetic field in the vicinity.
- the conductor 42 is passed through the rotating shaft 14 and the arm 12 having a magnetic shield function. Therefore, the leakage of the magnetic field generated by the current flowing through the conductor 42 can be suppressed, and the magnetic field force S ion beam 4 can be prevented from being adversely affected as described above, for example.
- a bare conductor is usually used in order to avoid generation of impurities and gas from the coating material.
- the conductor is routed in a state where it is exposed in the vacuum vessel 10, the surroundings of the ion source 2 are in a vacuum atmosphere and there are many ions and electrons that trigger discharge! Therefore, when a high voltage (for example, about several hundred V to several kV) is applied to the conductor, a discharge occurs between the surrounding different potential part (for example, ground potential part; the same shall apply hereinafter) and ions are generated.
- a high voltage for example, about several hundred V to several kV
- the surrounding different potential part for example, ground potential part; the same shall apply hereinafter
- the conductor 42 is passed through the rotating shaft 14 and the arm 12 at the ground potential, and the conductor 42 is electrically shielded from the atmosphere in the vacuum vessel 10. . Therefore, when a high voltage is applied to the conductor 42, a discharge is generated between the different potential portions in the vacuum vessel 10 and the extraction of the ion beam 4 from the ion source 2 becomes unstable. It is possible to suppress the occurrence of the phenomenon.
- the ion source 2 is extracted from the ion source 2 at a position facing the ion source 2 in the vacuum vessel 10 at a predetermined angle with respect to the substrate 6 with the passage of the substrate 6 in between.
- a beam measuring device 46 for measuring the current density distribution in the width direction of the ion beam 4 is provided.
- the beam measuring instrument 46 is provided at a position facing the ion source 2 positioned at an angle substantially perpendicular to the substrate 6, but this is not limitative. It is not something to be done.
- the beam measuring device 46 for measuring the current density distribution in the width direction of the ion beam 4 includes a plurality (a large number) of the ion beams 4 arranged in parallel in the width direction as in this embodiment. Beam measuring instrument 46 may be used. Alternatively, one beam measuring device 46 that is mechanically driven (driven) in the width direction of the ion beam 4 may be used. However, the former is preferable because the current density distribution of the ion beam 4 can be measured at once by a plurality of beam measuring units 46, and the measurement time can be shortened. In particular, when the substrate 6 is enlarged and the ion source 2 is also enlarged, the former is preferable.
- each beam measuring instrument 46 includes a Faraday cup 48, a negative suppression electrode 50 provided upstream thereof, a positive suppression electrode 52 provided upstream thereof, and a ground electrode provided upstream thereof. 54 and a conductor container 56.
- the Faraday cup 48 receives the ion beam 4 and measures the beam current density.
- the negative suppression electrode 50 suppresses leakage of secondary electrons emitted from the Faraday cup 48 when the ion beam 4 enters the Faraday cup 48, and a negative voltage is applied thereto.
- the positive suppression electrode 52 suppresses the ions generated in the upstream atmosphere from flowing into the Faraday cup 48, and is applied with a positive voltage.
- the ground electrode 54 acts as a mask for determining the size of the ion beam 4 incident on the Faraday cup 48 and electrically shields the downstream electrode and the like from the upstream side force and is electrically grounded.
- the conductor container 56 is connected to the ground electrode 54 and cooperates with the ground electrode 54 to electrically shield the internal Faraday cup 48 and the electrodes 50 and 52, and is electrically grounded.
- the current density distribution of the ion beam 4 at that position can be measured by using the beam measuring device 46 at the required position. Further, the uniformity of the current density distribution can also be obtained from the measurement result of the current density distribution of the ion beam 4.
- the beam measuring instrument 46 can also be used for such measurement.
- the beam measuring instrument 46 is provided at a position facing the ion source 2 positioned at a substantially perpendicular angle with respect to the substrate 6 as in this embodiment, it is close to the ion source 2.
- the beam measuring instrument 46 can be positioned in the center.
- the ion beam 4 can be easily incident on the beam measuring device 46 almost perpendicularly. Therefore, the accuracy of measurement by the beam measuring instrument 46 can be improved.
- the rotating shaft 14 is rotated as necessary to position the ion source 2 at an angle facing the beam measuring instrument 46. While generating the ion beam 4 from the ion source 2 manually or under preset conditions, the current density distribution of the ion beam 4 drawn out from the ion source 2 is measured using the beam measuring device 46. At this time, if necessary, the current density at the required position of the ion beam 4 and the uniformity of the current density distribution of the ion beam 4 may also be measured.
- the process proceeds to the next step. If the current density distribution is not within the allowable range, the current density distribution is adjusted manually or automatically to be within the allowable range. At this time, if necessary, the current density at the required position of the ion beam 4 and the uniformity of the current density distribution of the ion beam 4 are adjusted. And if necessary, these adjustments may be made manually or automatically. Confirm that the necessary ion beam conditions are met.
- the rotating shaft 14 is rotated to position the ion source 2 at a predetermined angle necessary for processing the substrate 6.
- the substrate 6 is irradiated with an ion beam from the ion source 2 while the substrate 6 is driven by the substrate driving mechanism 30 as described above, and the substrate 6 is processed.
- the alignment process as described above is performed on the surface of the substrate 6 for liquid crystal display.
- the external force of the vacuum vessel 10 can easily adjust the angle of the ion source 2 to a desired one. If necessary, move the ion source to the measurement position, measure the current density distribution of the ion beam, evaluate it, and make the necessary adjustments before processing the ion source.
- the substrate can be processed by moving it to a position. As a result, it becomes easy to perform stable processing.
- the ion beam irradiation apparatus is an ion beam alignment apparatus or an ion beam alignment processing apparatus
- the ion beam irradiation method is an ion beam alignment method or an ion beam alignment process. They can also be called methods.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/590,911 US7436075B2 (en) | 2004-09-02 | 2005-08-31 | Ion beam irradiation apparatus and ion beam irradiation method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-255648 | 2004-09-02 | ||
JP2004255648A JP4371011B2 (ja) | 2004-09-02 | 2004-09-02 | イオンビーム照射装置およびイオンビーム照射方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006025452A1 true WO2006025452A1 (ja) | 2006-03-09 |
Family
ID=36000101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/015919 WO2006025452A1 (ja) | 2004-09-02 | 2005-08-31 | イオンビーム照射装置およびイオンビーム照射方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7436075B2 (ja) |
JP (1) | JP4371011B2 (ja) |
KR (1) | KR100869522B1 (ja) |
CN (1) | CN100552866C (ja) |
TW (1) | TW200614312A (ja) |
WO (1) | WO2006025452A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7338683B2 (en) * | 2004-05-10 | 2008-03-04 | Superpower, Inc. | Superconductor fabrication processes |
JP4605146B2 (ja) * | 2006-11-16 | 2011-01-05 | 日新イオン機器株式会社 | イオンビーム計測装置 |
JP4530032B2 (ja) * | 2007-11-29 | 2010-08-25 | 日新イオン機器株式会社 | イオンビーム照射方法およびイオンビーム照射装置 |
US8108986B2 (en) * | 2007-12-28 | 2012-02-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a perpendicular magnetic write pole having a large bevel angle |
JP5298593B2 (ja) * | 2008-03-26 | 2013-09-25 | 大日本印刷株式会社 | パターン形成装置 |
JP4766156B2 (ja) * | 2009-06-11 | 2011-09-07 | 日新イオン機器株式会社 | イオン注入装置 |
KR101288574B1 (ko) | 2009-12-02 | 2013-07-22 | 제일모직주식회사 | 갭필용 충전제 및 상기 충전제를 사용한 반도체 캐패시터의 제조 방법 |
KR20110101904A (ko) * | 2010-03-10 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 이온 도핑 장치 및 도핑 방법 |
KR101769493B1 (ko) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | 기판처리장치 및 그를 가지는 기판처리시스템 |
KR101941547B1 (ko) | 2012-01-06 | 2019-04-15 | 삼성디스플레이 주식회사 | 광 배향 방법, 이를 수행하기 위한 노광 장치 및 액정 표시 패널 |
KR101380589B1 (ko) * | 2012-05-17 | 2014-04-07 | 로체 시스템즈(주) | 맵핑 유니트 |
US10354836B2 (en) * | 2014-03-09 | 2019-07-16 | Ib Labs, Inc. | Methods, apparatuses, systems and software for treatment of a specimen by ion-milling |
US9911573B2 (en) * | 2014-03-09 | 2018-03-06 | Ib Labs, Inc. | Methods, apparatuses, systems and software for treatment of a specimen by ion-milling |
TWI643531B (zh) * | 2017-01-12 | 2018-12-01 | 日商住友重機械工業股份有限公司 | Particle acceleration system and method for adjusting particle acceleration system |
WO2018138801A1 (ja) | 2017-01-25 | 2018-08-02 | 住友重機械工業株式会社 | 粒子加速システム及び粒子加速システムの調整方法 |
CN107170659B (zh) * | 2017-05-26 | 2019-03-29 | 北京创世威纳科技有限公司 | 一种用于实现角度刻蚀的离子源刻蚀设备 |
CN107610994B (zh) | 2017-08-10 | 2019-06-07 | 江苏鲁汶仪器有限公司 | 一种离子束刻蚀系统 |
CN112585714A (zh) * | 2018-08-31 | 2021-03-30 | 株式会社日立高新技术 | 离子研磨装置 |
WO2020214759A1 (en) * | 2019-04-16 | 2020-10-22 | Axcelis Technologies, Inc. | Multiple arc chamber source |
CN117510089B (zh) * | 2024-01-05 | 2024-04-23 | 成都国泰真空设备有限公司 | 一种用于玻璃表面处理的离子束刻蚀设备 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278643A (ja) * | 1989-02-28 | 1990-11-14 | Eaton Corp | イオン注入機 |
JPH10162770A (ja) * | 1996-05-15 | 1998-06-19 | Semiconductor Energy Lab Co Ltd | ドーピング装置およびドーピング処理方法 |
JP2000012282A (ja) * | 1998-06-22 | 2000-01-14 | Nissin Electric Co Ltd | 三相交流を用いたプラズマ発生装置 |
JP2000122064A (ja) * | 1998-10-12 | 2000-04-28 | Nec Corp | 液晶配向膜の配向処理方法およびその装置 |
JP2001101990A (ja) * | 1999-09-30 | 2001-04-13 | Nissin Electric Co Ltd | イオン注入装置 |
JP2005174871A (ja) * | 2003-12-15 | 2005-06-30 | Mitsui Eng & Shipbuild Co Ltd | イオン注入装置 |
JP2005189788A (ja) * | 2003-12-25 | 2005-07-14 | Mikuni Denshi Kk | 配向処理装置と配向膜 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4278493A (en) * | 1980-04-28 | 1981-07-14 | International Business Machines Corporation | Method for cleaning surfaces by ion milling |
WO1993007924A1 (en) * | 1991-10-18 | 1993-04-29 | Spire Corporation | Bactericidal coatings for implants |
JPH09218408A (ja) | 1996-02-13 | 1997-08-19 | Nissin Electric Co Ltd | 配向膜の配向処理方法 |
EP1004135A1 (en) * | 1997-08-13 | 2000-05-31 | Semiconductor Equipment Associates Inc. Varian | Scanning system with linear gas bearings and active counter-balance options |
US6632483B1 (en) | 2000-06-30 | 2003-10-14 | International Business Machines Corporation | Ion gun deposition and alignment for liquid-crystal applications |
US7064340B1 (en) * | 2004-12-15 | 2006-06-20 | Axcelis Technologies, Inc. | Method and apparatus for ion beam profiling |
-
2004
- 2004-09-02 JP JP2004255648A patent/JP4371011B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-31 CN CNB2005800091194A patent/CN100552866C/zh not_active Expired - Fee Related
- 2005-08-31 US US10/590,911 patent/US7436075B2/en not_active Expired - Fee Related
- 2005-08-31 KR KR1020067019538A patent/KR100869522B1/ko not_active IP Right Cessation
- 2005-08-31 WO PCT/JP2005/015919 patent/WO2006025452A1/ja active Application Filing
- 2005-09-02 TW TW094130085A patent/TW200614312A/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02278643A (ja) * | 1989-02-28 | 1990-11-14 | Eaton Corp | イオン注入機 |
JPH10162770A (ja) * | 1996-05-15 | 1998-06-19 | Semiconductor Energy Lab Co Ltd | ドーピング装置およびドーピング処理方法 |
JP2000012282A (ja) * | 1998-06-22 | 2000-01-14 | Nissin Electric Co Ltd | 三相交流を用いたプラズマ発生装置 |
JP2000122064A (ja) * | 1998-10-12 | 2000-04-28 | Nec Corp | 液晶配向膜の配向処理方法およびその装置 |
JP2001101990A (ja) * | 1999-09-30 | 2001-04-13 | Nissin Electric Co Ltd | イオン注入装置 |
JP2005174871A (ja) * | 2003-12-15 | 2005-06-30 | Mitsui Eng & Shipbuild Co Ltd | イオン注入装置 |
JP2005189788A (ja) * | 2003-12-25 | 2005-07-14 | Mikuni Denshi Kk | 配向処理装置と配向膜 |
Also Published As
Publication number | Publication date |
---|---|
TW200614312A (en) | 2006-05-01 |
JP4371011B2 (ja) | 2009-11-25 |
US20070184596A1 (en) | 2007-08-09 |
KR100869522B1 (ko) | 2008-11-19 |
TWI336092B (ja) | 2011-01-11 |
CN100552866C (zh) | 2009-10-21 |
US7436075B2 (en) | 2008-10-14 |
KR20070010129A (ko) | 2007-01-22 |
JP2006073359A (ja) | 2006-03-16 |
CN1934674A (zh) | 2007-03-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2006025452A1 (ja) | イオンビーム照射装置およびイオンビーム照射方法 | |
US10145014B2 (en) | Film forming apparatus | |
US9844126B2 (en) | Plasma treatment apparatus | |
KR900005347B1 (ko) | 플라즈마 처리장치 | |
JP5047463B2 (ja) | 基板をイオン注入する方法及びこの方法を実施する為のイオン注入装置 | |
KR100809138B1 (ko) | 이온주입장치 | |
KR101071581B1 (ko) | 이온 주입 장치 | |
US20150197853A1 (en) | Substrate processing apparatus | |
KR20070003977A (ko) | 이온 빔 전류 변조 | |
JP2012532423A (ja) | 機械的二次元走査注入システムの均一性および生産性を改善するための、ビーム走査法の使用方法 | |
JP6567119B1 (ja) | 基板処理装置及びその制御方法、成膜装置、電子部品の製造方法 | |
KR101398729B1 (ko) | 이온 주입 장치 | |
JP6957270B2 (ja) | 成膜装置および成膜方法 | |
KR20220106044A (ko) | 플라스마 처리 장치 | |
WO2017188132A1 (ja) | イオンビーム照射装置及びイオンビーム照射方法 | |
WO2023149323A1 (ja) | プラズマ処理装置 | |
KR102196274B1 (ko) | 성막 장치 및 성막 방법 | |
WO2023166966A1 (ja) | 基板処理装置、基板処理方法および半導体デバイスの製造方法 | |
JP2008021504A (ja) | 照射方向可変イオン照射装置および二次イオン質量分析装置 | |
JP2022101218A (ja) | スパッタ装置及びスパッタ装置の制御方法 | |
JP3686563B2 (ja) | 半導体装置の製造方法およびプラズマ処理装置 | |
JP2016096099A (ja) | イオンミリング装置 | |
JP2010056336A (ja) | イオン照射装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10590911 Country of ref document: US Ref document number: 2007184596 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 200580009119.4 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067019538 Country of ref document: KR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWP | Wipo information: published in national office |
Ref document number: 1020067019538 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 10590911 Country of ref document: US |
|
122 | Ep: pct application non-entry in european phase |