JP2006073359A - イオンビーム照射装置およびイオンビーム照射方法 - Google Patents
イオンビーム照射装置およびイオンビーム照射方法 Download PDFInfo
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- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
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- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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Abstract
【解決手段】 このイオンビーム照射装置は、真空容器10と、その中に設けられていて基板6にそれよりも幅の広いイオンビーム4を照射するイオン源2と、真空容器10内で基板6を往復駆動する基板駆動機構30と、中心軸14aがイオン源2から基板寄りに離れた所にありかつ基板表面に実質的に平行である回転軸14と、真空容器10内に設けられていてイオン源2を回転軸14から支持するアーム12と、真空容器10外に設けられていて回転軸14を往復回転させるモータとを備えている。
【選択図】 図1
Description
回転軸14を必要に応じて回転させてイオン源2をビーム計測器46に対向する角度に位置させ、手動でまたは予め設定された条件でイオン源2からイオンビーム4を発生させながら、ビーム計測器46を用いて、イオン源2から引き出されたイオンビーム4の前記電流密度分布を計測する。このときに、必要に応じて、イオンビーム4の所要位置の電流密度や、イオンビーム4の電流密度分布の均一性をも計測しても良い。
次いで、前記計測した電流密度分布が所定の許容範囲内にあるか否かを判断し、許容範囲内にあれば次のステップに進み、許容範囲内になければ前記電流密度分布を許容範囲内に入れる調整を手動または自動で行う。このとき、必要に応じて、イオンビーム4の所要位置の電流密度や、イオンビーム4の電流密度分布の均一性をも評価して、必要があればそれらの調整を手動または自動で行っても良い。そして、必要なイオンビームの条件が満たされていることを確認する。
次いで、回転軸14を回転させてイオン源2を基板6の処理に必要な所定の角度に位置させる。
次いで、基板駆動機構30によって基板6を前述したように駆動しながら、当該基板6にイオン源2からイオンビームを照射して基板6に処理を施す。例えば、液晶ディスプレイ用の基板6の表面に前述したような配向処理を施す。
4 イオンビーム
6 基板
10 真空容器
12 アーム
14 回転軸
14a 中心軸
22 モータ
30 基板駆動機構
46 ビーム計測器
Claims (6)
- 真空に排気される真空容器と、
前記真空容器内に設けられていて、処理すべき基板にそれよりも幅の広いイオンビームを照射するイオン源と、
前記真空容器内で前記基板を、前記イオン源から引き出されたイオンビームの幅方向と実質的に直交する方向に駆動する基板駆動機構と、
前記真空容器を貫通している回転軸であって、その中心軸が前記イオン源から前記基板寄りに離れた所にありかつ前記基板の表面に実質的に平行である回転軸と、
前記真空容器内に設けられていて、前記イオン源を前記回転軸から支持するアームと、 前記真空容器外に設けられていて、前記回転軸を往復回転させるモータとを備えていて、
前記回転軸の中心軸を中心にして前記イオン源を回転可能に支持していることを特徴とするイオンビーム照射装置。 - 前記回転軸の中心軸と前記基板の表面との間の距離を、前記イオン源の出口側の幅であって当該イオン源の回転方向側の幅の半分と同程度以下(下限は0)にしている請求項1記載のイオンビーム照射装置。
- 前記回転軸およびアームが中空の磁性材から成っていて磁気シールド機能を有すると共に接地電位にされており、前記真空容器の外部から前記イオン源へ電力を供給する導体を、当該回転軸およびアームの内部に通している請求項1または2記載のイオンビーム照射装置。
- 前記真空容器内であって前記基板に対して所定の角度に位置させたイオン源に前記基板の通路を挟んで対向する位置に、前記イオン源から引き出されたイオンビームの前記幅方向の電流密度分布を計測するビーム計測器を設けている請求項1、2または3記載のイオンビーム照射装置。
- 前記ビーム計測器は、前記基板に対してほぼ垂直な角度に位置させた前記イオン源に対向する位置に設けられている請求項4記載のイオンビーム照射装置。
- 請求項4または5記載のイオンビーム照射装置を用いたイオンビーム照射方法において、
前記イオン源を前記ビーム計測器に対向する角度に位置させて、前記ビーム計測器を用いて、前記イオン源から引き出されたイオンビームの前記電流密度分布を計測するステップと、
次いで、前記計測した電流密度分布が所定の許容範囲内にあるか否かを判断し、許容範囲内にあれば次のステップに進み、許容範囲内になければ前記電流密度分布を許容範囲内に入れる調整を行うステップと、
次いで、前記イオン源を前記基板の処理に必要な所定の角度に位置させるステップと、 次いで、前記基板駆動機構によって前記基板を駆動しながら、当該基板に前記イオン源からイオンビームを照射して当該基板に処理を施すステップとを備えていることを特徴とするイオンビーム照射方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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JP2004255648A JP4371011B2 (ja) | 2004-09-02 | 2004-09-02 | イオンビーム照射装置およびイオンビーム照射方法 |
PCT/JP2005/015919 WO2006025452A1 (ja) | 2004-09-02 | 2005-08-31 | イオンビーム照射装置およびイオンビーム照射方法 |
CNB2005800091194A CN100552866C (zh) | 2004-09-02 | 2005-08-31 | 离子束照射装置和离子束照射方法 |
KR1020067019538A KR100869522B1 (ko) | 2004-09-02 | 2005-08-31 | 이온빔 조사 장치 및 이온빔 조사 방법 |
US10/590,911 US7436075B2 (en) | 2004-09-02 | 2005-08-31 | Ion beam irradiation apparatus and ion beam irradiation method |
TW094130085A TW200614312A (en) | 2004-09-02 | 2005-09-02 | Ion beam irradiation device and ion beam irradiation method |
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JP2004255648A JP4371011B2 (ja) | 2004-09-02 | 2004-09-02 | イオンビーム照射装置およびイオンビーム照射方法 |
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JP2006073359A true JP2006073359A (ja) | 2006-03-16 |
JP4371011B2 JP4371011B2 (ja) | 2009-11-25 |
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US (1) | US7436075B2 (ja) |
JP (1) | JP4371011B2 (ja) |
KR (1) | KR100869522B1 (ja) |
CN (1) | CN100552866C (ja) |
TW (1) | TW200614312A (ja) |
WO (1) | WO2006025452A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008128660A (ja) * | 2006-11-16 | 2008-06-05 | Nissin Ion Equipment Co Ltd | イオンビーム計測装置 |
JP2009233539A (ja) * | 2008-03-26 | 2009-10-15 | Dainippon Printing Co Ltd | パターン形成装置 |
KR101380589B1 (ko) * | 2012-05-17 | 2014-04-07 | 로체 시스템즈(주) | 맵핑 유니트 |
WO2020044531A1 (ja) * | 2018-08-31 | 2020-03-05 | 株式会社日立ハイテクノロジーズ | イオンミリング装置 |
US11178748B2 (en) | 2017-01-25 | 2021-11-16 | Sumitomo Heavy Industries, Ltd. | Particle acceleration system and particle acceleration system adjustment method |
JP2022529606A (ja) * | 2019-04-16 | 2022-06-23 | アクセリス テクノロジーズ, インコーポレイテッド | 複数のアークチャンバを備えるイオン源 |
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US7338683B2 (en) * | 2004-05-10 | 2008-03-04 | Superpower, Inc. | Superconductor fabrication processes |
JP4530032B2 (ja) * | 2007-11-29 | 2010-08-25 | 日新イオン機器株式会社 | イオンビーム照射方法およびイオンビーム照射装置 |
US8108986B2 (en) * | 2007-12-28 | 2012-02-07 | Hitachi Global Storage Technologies Netherlands B.V. | Method for manufacturing a perpendicular magnetic write pole having a large bevel angle |
JP4766156B2 (ja) * | 2009-06-11 | 2011-09-07 | 日新イオン機器株式会社 | イオン注入装置 |
KR101288574B1 (ko) | 2009-12-02 | 2013-07-22 | 제일모직주식회사 | 갭필용 충전제 및 상기 충전제를 사용한 반도체 캐패시터의 제조 방법 |
KR20110101904A (ko) * | 2010-03-10 | 2011-09-16 | 삼성모바일디스플레이주식회사 | 이온 도핑 장치 및 도핑 방법 |
KR101769493B1 (ko) * | 2011-12-23 | 2017-08-30 | 주식회사 원익아이피에스 | 기판처리장치 및 그를 가지는 기판처리시스템 |
KR101941547B1 (ko) | 2012-01-06 | 2019-04-15 | 삼성디스플레이 주식회사 | 광 배향 방법, 이를 수행하기 위한 노광 장치 및 액정 표시 패널 |
US10354836B2 (en) * | 2014-03-09 | 2019-07-16 | Ib Labs, Inc. | Methods, apparatuses, systems and software for treatment of a specimen by ion-milling |
US9911573B2 (en) * | 2014-03-09 | 2018-03-06 | Ib Labs, Inc. | Methods, apparatuses, systems and software for treatment of a specimen by ion-milling |
TWI643531B (zh) * | 2017-01-12 | 2018-12-01 | 日商住友重機械工業股份有限公司 | Particle acceleration system and method for adjusting particle acceleration system |
CN107170659B (zh) * | 2017-05-26 | 2019-03-29 | 北京创世威纳科技有限公司 | 一种用于实现角度刻蚀的离子源刻蚀设备 |
CN107610994B (zh) | 2017-08-10 | 2019-06-07 | 江苏鲁汶仪器有限公司 | 一种离子束刻蚀系统 |
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- 2004-09-02 JP JP2004255648A patent/JP4371011B2/ja not_active Expired - Fee Related
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- 2005-08-31 CN CNB2005800091194A patent/CN100552866C/zh not_active Expired - Fee Related
- 2005-08-31 US US10/590,911 patent/US7436075B2/en not_active Expired - Fee Related
- 2005-08-31 KR KR1020067019538A patent/KR100869522B1/ko not_active IP Right Cessation
- 2005-08-31 WO PCT/JP2005/015919 patent/WO2006025452A1/ja active Application Filing
- 2005-09-02 TW TW094130085A patent/TW200614312A/zh not_active IP Right Cessation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008128660A (ja) * | 2006-11-16 | 2008-06-05 | Nissin Ion Equipment Co Ltd | イオンビーム計測装置 |
JP4605146B2 (ja) * | 2006-11-16 | 2011-01-05 | 日新イオン機器株式会社 | イオンビーム計測装置 |
JP2009233539A (ja) * | 2008-03-26 | 2009-10-15 | Dainippon Printing Co Ltd | パターン形成装置 |
KR101380589B1 (ko) * | 2012-05-17 | 2014-04-07 | 로체 시스템즈(주) | 맵핑 유니트 |
US11178748B2 (en) | 2017-01-25 | 2021-11-16 | Sumitomo Heavy Industries, Ltd. | Particle acceleration system and particle acceleration system adjustment method |
WO2020044531A1 (ja) * | 2018-08-31 | 2020-03-05 | 株式会社日立ハイテクノロジーズ | イオンミリング装置 |
JPWO2020044531A1 (ja) * | 2018-08-31 | 2021-10-21 | 株式会社日立ハイテク | イオンミリング装置 |
US11508552B2 (en) | 2018-08-31 | 2022-11-22 | Hitachi High-Tech Corporation | Ion milling device |
JP2022529606A (ja) * | 2019-04-16 | 2022-06-23 | アクセリス テクノロジーズ, インコーポレイテッド | 複数のアークチャンバを備えるイオン源 |
JP7455861B2 (ja) | 2019-04-16 | 2024-03-26 | アクセリス テクノロジーズ, インコーポレイテッド | 複数のアークチャンバを備えるイオン源 |
Also Published As
Publication number | Publication date |
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TW200614312A (en) | 2006-05-01 |
JP4371011B2 (ja) | 2009-11-25 |
WO2006025452A1 (ja) | 2006-03-09 |
US20070184596A1 (en) | 2007-08-09 |
KR100869522B1 (ko) | 2008-11-19 |
TWI336092B (ja) | 2011-01-11 |
CN100552866C (zh) | 2009-10-21 |
US7436075B2 (en) | 2008-10-14 |
KR20070010129A (ko) | 2007-01-22 |
CN1934674A (zh) | 2007-03-21 |
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