WO2005124850A8 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法

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Publication number
WO2005124850A8
WO2005124850A8 PCT/JP2005/010921 JP2005010921W WO2005124850A8 WO 2005124850 A8 WO2005124850 A8 WO 2005124850A8 JP 2005010921 W JP2005010921 W JP 2005010921W WO 2005124850 A8 WO2005124850 A8 WO 2005124850A8
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
mount
melting point
die
connection
Prior art date
Application number
PCT/JP2005/010921
Other languages
English (en)
French (fr)
Other versions
WO2005124850A1 (ja
Inventor
Osamu Ikeda
Masahide Okamoto
Ryo Haruta
Hidemasa Kagii
Hiroi Oka
Hiroyuki Nakamura
Original Assignee
Renesas Tech Corp
Osamu Ikeda
Masahide Okamoto
Ryo Haruta
Hidemasa Kagii
Hiroi Oka
Hiroyuki Nakamura
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp, Osamu Ikeda, Masahide Okamoto, Ryo Haruta, Hidemasa Kagii, Hiroi Oka, Hiroyuki Nakamura filed Critical Renesas Tech Corp
Priority to US11/629,703 priority Critical patent/US20080122050A1/en
Publication of WO2005124850A1 publication Critical patent/WO2005124850A1/ja
Publication of WO2005124850A8 publication Critical patent/WO2005124850A8/ja

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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
PCT/JP2005/010921 2004-06-17 2005-06-15 半導体装置および半導体装置の製造方法 WO2005124850A1 (ja)

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JP2004334629A JP4145287B2 (ja) 2004-06-17 2004-11-18 半導体装置および半導体装置の製造方法
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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008041350A1 (en) * 2006-09-29 2008-04-10 Kabushiki Kaisha Toshiba Joint with first and second members with a joining layer located therebetween containing sn metal and another metallic material; methods for forming the same joint
US7880177B2 (en) * 2006-10-13 2011-02-01 Sanyo Electric Co., Ltd. Semiconductor light-emitting device, illuminator and method of manufacturing semiconductor light-emitting device
KR20080065153A (ko) 2007-01-08 2008-07-11 페어차일드코리아반도체 주식회사 메탈 태브 다이 접착 패들（ｄａｐ）을 구비한 파워소자패키지 및 그 패키지 제조방법
KR20090042556A (ko) * 2007-10-26 2009-04-30 삼성전기주식회사 인쇄회로기판 및 그 제조방법
JP4961398B2 (ja) * 2008-06-30 2012-06-27 株式会社日立製作所 半導体装置
TWI436710B (zh) * 2011-02-09 2014-05-01 Murata Manufacturing Co Connection structure
DE102011013829A1 (de) 2011-03-11 2012-09-13 Ruhrpumpen Gmbh Spalttopf einer Magnetkupplung, insbesondere einer Magnetkupplungspumpe
US9735126B2 (en) * 2011-06-07 2017-08-15 Infineon Technologies Ag Solder alloys and arrangements
US8957521B2 (en) * 2011-12-27 2015-02-17 Panasonic Intellectual Property Management Co., Ltd. Mounted structure
WO2013126458A1 (en) * 2012-02-24 2013-08-29 Skyworks Solutions, Inc. Improved structures, devices and methods releated to copper interconnects for compound semiconductors
JP2014017417A (ja) * 2012-07-10 2014-01-30 Denso Corp 半導体装置
JP2014180690A (ja) * 2013-03-19 2014-09-29 Nippon Steel Sumikin Materials Co Ltd シート状高温はんだ接合材およびこれを用いたダイボンディング方法
EP2782124A1 (en) * 2013-03-19 2014-09-24 ABB Technology AG Power semiconductor mounting
JP6020391B2 (ja) * 2013-07-04 2016-11-02 住友金属鉱山株式会社 ＰｂフリーＺｎ−Ａｌ系合金はんだとＣｕ系母材の半導体素子接合用クラッド材
JP2015042409A (ja) * 2013-08-26 2015-03-05 住友金属鉱山株式会社 ＰｂフリーＺｎ−Ａｌ系合金はんだと金属母材のクラッド材およびその製造方法
JP2015133396A (ja) * 2014-01-13 2015-07-23 株式会社デンソー 半導体装置
DE102014218426A1 (de) * 2014-09-15 2016-03-17 Siemens Aktiengesellschaft Baugruppe mit mindestens zwei Tragkörpern und einen Lotverbund
JP6222375B2 (ja) 2014-10-17 2017-11-01 富士電機株式会社 鉛フリー半田付け方法及び半田付け物品
US11094661B2 (en) 2015-11-16 2021-08-17 Kabushiki Kaisha Toyota Chuo Kenkyusho Bonded structure and method of manufacturing the same
JP6005313B1 (ja) 2016-02-10 2016-10-12 古河電気工業株式会社 導電性接着フィルムおよびこれを用いたダイシング・ダイボンディングフィルム
JP6005312B1 (ja) 2016-02-10 2016-10-12 古河電気工業株式会社 導電性接着フィルムおよびこれを用いたダイシング・ダイボンディングフィルム
JP5972489B1 (ja) 2016-02-10 2016-08-17 古河電気工業株式会社 導電性接着フィルムおよびこれを用いたダイシング・ダイボンディングフィルム
JP5989928B1 (ja) 2016-02-10 2016-09-07 古河電気工業株式会社 導電性接着フィルムおよびこれを用いたダイシング・ダイボンディングフィルム
JP5972490B1 (ja) 2016-02-10 2016-08-17 古河電気工業株式会社 導電性接着剤組成物ならびにこれを用いた導電性接着フィルムおよびダイシング・ダイボンディングフィルム
CN107552996A (zh) * 2017-09-08 2018-01-09 如皋市下原科技创业服务有限公司 一种贴片二极管焊接专用焊锡膏
TW202116455A (zh) * 2019-10-23 2021-05-01 美商阿爾發金屬化工公司 用於電子總成之工程材料
JP7495225B2 (ja) * 2019-12-16 2024-06-04 株式会社デンソー 半導体装置
US20230045523A1 (en) * 2020-03-19 2023-02-09 Mitsubishi Electric Corporation Semiconductor device and method for manufacturing semiconductor device
JP6803106B1 (ja) * 2020-09-18 2020-12-23 株式会社半導体熱研究所 半導体デバイスの接合部材
EP4325568A4 (en) * 2021-04-28 2024-09-11 Senju Metal Industry Co LAYERED INTERCONNECTOR, SEMICONDUCTOR HOUSING AND POWER MODULE
JP2023121288A (ja) 2022-02-21 2023-08-31 古河電気工業株式会社 接合材組成物、接合材組成物の製造方法、接合フィルム、接合体の製造方法、及び接合体

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2563292B2 (ja) * 1986-12-29 1996-12-11 株式会社 徳力本店 複合ろう材のろう付方法
JPH04270092A (ja) * 1991-01-21 1992-09-25 Mitsubishi Electric Corp 半田材料及び接合方法
JP3243834B2 (ja) * 1992-05-26 2002-01-07 三菱電機株式会社 半田材及び接合方法
DE19611046A1 (de) * 1996-03-20 1997-09-25 Siemens Ag Halbleitervorrichtung
JP3854467B2 (ja) * 2001-02-02 2006-12-06 株式会社ルネサステクノロジ 半導体装置の製造方法
JP3757881B2 (ja) * 2002-03-08 2006-03-22 株式会社日立製作所 はんだ

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JP4145287B2 (ja) 2008-09-03
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US20080122050A1 (en) 2008-05-29
TWI284375B (en) 2007-07-21
WO2005124850A1 (ja) 2005-12-29

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