TW202116455A - 用於電子總成之工程材料 - Google Patents

用於電子總成之工程材料 Download PDF

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Publication number
TW202116455A
TW202116455A TW109136229A TW109136229A TW202116455A TW 202116455 A TW202116455 A TW 202116455A TW 109136229 A TW109136229 A TW 109136229A TW 109136229 A TW109136229 A TW 109136229A TW 202116455 A TW202116455 A TW 202116455A
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Taiwan
Prior art keywords
solder
alloy
core
layer
solder material
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TW109136229A
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English (en)
Inventor
蘭吉特 潘德拉
尼維迪沙 納加拉詹
傑瑞 西多尼
卡爾 比爾葛林
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美商阿爾發金屬化工公司
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Publication of TW202116455A publication Critical patent/TW202116455A/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B23K35/0238—Sheets, foils layered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0233—Sheets, foils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/40—Making wire or rods for soldering or welding
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H—ELECTRICITY
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    • B23K2101/36—Electric or electronic devices
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  • Die Bonding (AREA)

Abstract

一種用於電子總成中之焊料材料，焊料材料包含：焊料層；及核心層，其包含核心材料，核心層係夾置在焊料層之間，其中：核心材料之導熱率大於焊料之導熱率。

Description

用於電子總成之工程材料
本發明係關於一種用於電子總成中之焊料材料。
有兩個主要挑戰與高功率電子裝置的封裝及組裝相關聯，高功率電子裝置諸如IGBT、MOSFET、高功率LED、高功率微處理器、及其他在正常操作期間產生大量的熱之大面積裝置。第一個係如何確保所產生之熱的有效率消散，以維持正常操作溫度。第二個係如何降低由於相鄰層（由焊料或其他黏著材料附接）之材料之間的熱膨脹係數(coefficient of thermal expansion, CTE)不匹配所致之剪切應力。
圖1顯示一般電子裝置1之總成，其包括經由互連3（第I階）連接至基材4的裝置2。基材4係經由互連5（第II階）連接至印刷電路板(PCB) 6。PCB 6係經由互連7（第III階）連接至散熱器8。對於高功率電子裝置而言最重要的互連係將裝置/晶粒連接至基材的互連、將基材連接至印刷電路板(PCB)的互連、及將PCB連接至散熱器的互連，即圖1之3、5、及7。此類互連係在散熱路徑中。因此，所欲的是互連材料之高導熱率。半導體晶粒、基材、及PCB材料具有不同的CTE，從而在高溫操作期間在界面產生應力。為了最小化該應力，設計者通常增加互連之界面厚度，但此繼而增加界面之熱阻。
焊料係電子產業中最常用的互連材料之一。大多數焊料之導熱率係低於65 W/m.K。將有利的是能夠使用具有較高導熱率的互連材料，以幫助散熱。厚焊料互連的另一個問題在於，在回焊製程期間，當焊料呈液相時，晶粒或基材在其被冷卻至低於焊料之凝固溫度之前，晶粒或基材會漂浮在液體材料上。此導致晶粒/基材在所有方向上的移動（所謂的「傾斜(tilt)」），其係對於裝置性能及可靠性另一個疑慮。控制此晶粒移動係一挑戰。
本發明試圖解決與先前技術相關聯的至少一些問題或至少為其提供商業上可接受的替代性解決方案。
在第一態樣中，本發明提供一種用於電子總成中之焊料材料，該焊料材料包含： 焊料層；及 核心層，其包含核心材料，該核心層係夾置在該等焊料層之間， 其中： 該核心材料之導熱率大於該焊料之導熱率。
除非清楚指示相反情況，否則如本文中所定義的各態樣或實施例可與任何其他（多個）態樣組合。具體地，指示為較佳或有利的任何特徵可與指示為較佳或有利的任何其他特徵組合。
本發明人驚訝地發現，當用於連接在升高溫度下操作的電子裝置之組件時，此焊料材料可能能夠降低由經連接組件之CTE值不匹配所造成的應力。在不受理論束縛的情況下，認為核心材料的存在係用於「增厚(thicken)」在經連接組件之間的接點，從而減少應力。有利地，可提供此類應力降低而不顯著地減少自經連接部件的散熱。在不受理論束縛的情況下，認為此係因為核心材料之導熱率大於焊料之導熱率。換言之，藉由使用具有較焊料大的導熱性之核心材料，能夠增厚接點以降低熱應力而不減少散熱。因此，其中使用焊料材料來連接組件的高功率電子裝置（諸如IGBT、MOSFET、高功率LED、高功率微處理器、或其他在正常操作期間產生大量的熱之大面積裝置）可展現改善的性能及/或可靠性。此類性能及可靠性可在升高溫度下及/或在打開及關閉期間經改善。
當相較於一般無Pb焊料（諸如SnCu、SAC、SnAg、及SnBi）時，使用此焊料材料形成的接點或互連可具有較佳的熱-機械可靠性。
本文中所使用之用語「電子總成(electronic assembly)」涵蓋例如電子封裝及裝置之總成，且可包括例如裝置或晶粒至基材、基材至印刷電路板、或印刷電路板至散熱器的附接。
本文中所用之用語「焊料(solder)」涵蓋具有在90至400℃之範圍內的熔點之易熔金屬或金屬合金。
焊料材料包含焊料層及核心層。焊料材料可基本上由焊料層及核心層所組成，或由焊料層及核心層所組成。所謂「基本上由…所組成(consisting essentially of)」意指焊料材料可包含其他非指定組件，前提是其等不會實質影響焊料材料的性質。
焊料材料一般包含兩個焊料層，但可包含多於兩個焊料層。焊料層可由相同焊料或不同焊料形成。一般而言，焊料層係由相同焊料形成，或至少由具有類似回焊溫度之焊料形成，即液相溫度相差不大於20℃、一般不大於10℃、更一般不大於5℃。
焊料及核心係呈層之形式。此類層一般將呈片材之形式，其中兩個相對表面（主表面）具有較其他表面明顯更大的表面積。焊料層可係相同尺寸及形狀，或可係不同尺寸及/或形狀。核心層可具有類似於焊料層中之一或多者的尺寸及形狀，或可具有不同的尺寸及/或形狀。
核心層包含核心材料。核心層可基本上由核心材料所組成，或由核心材料所組成。
核心層係夾置在焊料層之間。一般而言，焊料層將實質上覆蓋核心層之至少兩個相對表面的整體，一般係主（即最大表面積）表面。核心層可完全囊封在焊料內，使得不會暴露核心材料。在此情況下，將第一焊料片材視為覆蓋該片材之主表面，且將第二焊料層視為覆蓋該片材之相對主表面，其中兩個焊料層「懸掛(over hanging)」在主表面上以覆蓋核心層之剩餘表面。替代地，核心層可僅於一些表面上由焊料層覆蓋，一般僅於兩個相對表面上，更一般僅於主表面上。
焊料層一般係與核心層直接接觸。焊料層一般係外層。
核心材料之導熱率大於焊料之導熱率。一般而言，此導熱率係藉由奈米快閃瞬態測量(nano-flash transient measurement)技術測量。
核心材料較佳地具有大於或等於65 W/m.K、較佳地大於65 w/m.K、更佳地大於70 W/m.k、甚至更佳地大於75 W/m.K之導熱率。此導熱率可藉由奈米快閃瞬態測量技術測量。由於電子總成中採用的一般焊料具有小於65 w/m.K之導熱率，所以具有較高導熱率的核心材料之存在增加焊料材料之總體導熱率。
核心材料之熔點較佳地高於焊料之回焊溫度。例如，核心材料可具有較焊料之回焊溫度高至少50℃、一般高至少75℃、更一般高至少100℃的熔點。用語「回焊溫度(reflow temperature)」在本文中係用於指在高於該溫度下固體焊料一定會熔化（而不是僅軟化）的溫度。若冷卻至低於此溫度，則焊料將不會流動。再一次升溫至高於該溫度，焊料將再次流動，即「回流(re-flow)」。藉由使核心材料具有高於焊料之回焊溫度的熔點，可增加接點/互連之厚度而不實質增加晶粒/封裝移動及/或傾斜，其係由當焊料呈液態時，晶粒/封裝漂浮在液體焊料頂部上所致。此可改善具有使用焊料材料連接之組件的電子裝置之性能或可靠性。
核心層之厚度較佳地係100至500 µm、更佳地係200至400 µm、甚至更佳地係150至300 µm。此類厚度可特別適用於降低由組件之CTE不匹配所造成的應力而不會過度地增加電子裝置之尺寸。較大的厚度可增加熱阻。相對較高的厚度可導致較高的熱阻但較低的側向應力。
各焊料層之厚度較佳地係25至150 µm、更佳地係自50至100 µm。此類厚度可特別適合用於提供組件之間的適當黏著性而不會顯著地降低焊料材料之整體導熱性或過度地增加裝置之尺寸。較低的厚度可在溫度循環的高溫操作期間導致較高的側向應力。
可依封裝設計的需要選擇核心及焊料層之厚度，以達成互連之所欲厚度。
核心材料較佳地包含下列（或由下列所組成、或基本上由下列所組成）：金屬及/或合金。金屬及金屬合金可提供足夠的導電性，以提供由焊料材料接合之組件之間的高位準電連接。
核心材料較佳地包含下列中之一或多者（或由下列中之一或多者所組成、或基本上由下列中之一或多者所組成）：銅、銀、鎳、鉬、鈹、鈷、鐵、銅鎢合金、鎳銀合金、銅鋅合金、及銅鎳鋅合金，更佳的是銅及銀中之一或多者。此類材料可提供高導電性及高導熱性的有利組合。
核心材料之CTE將對界面處之應力有影響。此應力可藉由選擇適當的核心材料而降低。例如，鎳之CTE係13 ppm/K，而銅之CTE係17 ppm/K，且CuW合金之CTE係取決於組成且可經客製化以符合裝置設計的需求。
核心材料在20℃下較佳地具有至少1 × 105 S/m、更佳地至少1 × 106 S/m、更佳地至少1 × 107 S/m、甚至更佳地至少4 × 107 S/m、又甚至更佳地至少5 × 107 S/m之導電率。此類導電率可提供由焊料材料接合之組件之間的高位準電連接。
焊料較佳地係無鉛的。此意指未刻意添加鉛。因此，其鉛含量為零或不高於意外雜質水平。鑒於健康考量及法規要求，無鉛焊料可係有利的。
焊料較佳地包含下列中之一或多者：In、SnIn合金（例如5至58% Sn、42至95% In）、SnBi合金（例如42至60% Sn、40至58% Bi）、BiIn合金（例如5至67% Bi、33至95% In）、AgIn合金（例如1至5% Ag、95至99% In，例如3% Ag、97% In）、SnAg合金（例如90至97.5% Sn、2.5至10% Ag）、SnCu合金（例如99.3至99.6% Sn、0.4至0.7% Cu）、InGa合金（例如99.3至99.5% In、0.5至0.7% Ga）、SnBiAgCu合金（例如50% Sn、47% Bi、1% Ag、2% Cu）、SnBiZn合金（例如65.5% Sn、31.5% Bi、3% Zn）、SnInAg合金（例如77.2% Sn、20% In、2.8% Ag）、SnBiAgCuIn合金（例如82.3% Sn、2.2% Bi、3% Ag、0.5% Cu、12% In）、SnZn合金（例如91% Sn、9% Zn）、SnCuInGa合金（例如92.8% Sn、0.7%Cu、6% In、0.5% Ga）、SnCuAg合金（例如95.5% Sn、3.8% Ag、0.7% Cu）、SnAgSb合金（例如95% Sn、3.5% Ag、1.5% Sb）、及SnCuSb合金（例如4至95% Sn、1至2% Cu、4% Sb）。%值係指重量%。合金可包含所述元素與任何不可避免的雜質。此類合金可特別適用於連接電氣裝置之組件。
在較佳實例中，核心材料包含銅，且焊料包含Sn-20In-2Ag合金。
焊料材料較佳地係呈箔、條(strip)、膜、帶(ribbon)、或預製件之形式。此類形式可特別適用於連接電子裝置之組件且/或可展現有利的處理性質。
在較佳實施例中，核心係完全塗佈有焊料。換言之，核心係完全被焊料圍繞，且不會暴露核心的任何部分。在此情況下，核心的任何部分都不會暴露於空氣或其他操作環境。此設計對於當暴露於氧及/或濕氣時易於被氧化的核心材料（諸如例如Cu或Ni）而言可為較佳的。
在替代較佳實施例中，核心僅於兩個相對表面上、一般僅於兩個最大相對表面（主表面）上塗佈有焊料。此設計對於大尺寸片材或帶的大量製造而言可能相對容易，大尺寸片材或帶可用焊料塗佈且可藉由高速沖壓製程自其切割出預製件。
焊料材料較佳地具有大於65 W/m.K、更佳地大於80 W/m.K、甚至更佳地大於100 W/m.K、又甚至更佳地大於130 W/m.K之有效導熱率。所謂「有效導熱率(effective thermal conductivity)」意指焊料材料之總導熱率，即包括焊料（具有較低導熱率）及核心（具有較高導熱率）兩者。此有效導熱率可改善自焊料材料的散熱。
本發明之第一態樣係關於一種焊料材料。用語「焊料材料(solder material)」可與用語「多層結構(multilayered structure)」同義。此外，用語「焊料層(solder layers)」係與用語「二或更多個焊料層(two or more solder layers)」同義。此外，為了避免疑慮，焊料層包含焊料材料。焊料層一般係外層。
因此，本發明之第一態樣係替代地表述為一種用於電子總成中之多層材料，該多層材料包含： 二或更多個（例如，外部）焊料層，各焊料層包含焊料材料；及 核心層，其包含核心材料，該核心層係夾置在該二或更多個焊料層之間， 其中： 該核心材料之導熱率大於該焊料材料之導熱率。
在進一步態樣中，本發明提供一種焊料接點，其包含本文所述之焊料材料。為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。此接點可展現由經接合組件之CTE不匹配所造成的低應力與高散熱之有利組合。因此，與習知的電子裝置相比，含有此接點的電子裝置可展現出改善的性能及可靠性。焊料接點之厚度對應於核心層及焊料層之厚度的總和。一般而言，厚度在回焊期間不會改變。
在進一步態樣中，本發明提供一種互連，其包含本文所述之焊料材料。為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。此互連可展現由經接合組件之CTE不匹配所造成的低應力與高散熱之有利組合。因此，與習知的電子裝置相比，含有此互連的電子裝置可展現出改善的性能及可靠性。
在進一步態樣中，本發明提供一種電子裝置，其包含本文所述之焊料材料、焊料接點、或互連。為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。與習知的電子裝置相比，此裝置可展現出改善的性能及可靠性。
在進一步態樣中，本發明提供一種IGBT、MOSFET、LED、或微處理器，其包含本文所述之焊料材料、焊料接點、或互連。為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。與習知的電子裝置相比，此裝置可展現出改善的性能及可靠性。
在進一步態樣中，本發明提供一種本文所述之焊料材料在焊接方法中的用途，該焊接方法係選自表面安裝技術(Surface Mount Technology, SMT)焊接、晶粒附接焊接、熱界面焊接、手工焊接、雷射及RF感應焊接、及熱超音波焊接(thermos-sonic soldering)。為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。本文所述之焊料材料特別適用於此類用途。
在進一步態樣中，本發明提供一種本文所述之焊料材料在晶粒附接（第I階）、基材附接（第II階）、或封裝至散熱器附接（第III階）中的用途。為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。
本文所述之焊料材料特別適用於此類用途。
在進一步的態樣中，本發明提供一種形成焊料接點之方法，其包含： 在二或更多個待接合工件附近提供本文所述之焊料材料、及 加熱該焊料材料以形成經焊接接點。
為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。所得接點可展現由經接合組件之CTE不匹配所造成的低應力與高散熱之有利組合。因此，與習知的電子裝置相比，含有此接點的電子裝置可展現出改善的性能及可靠性。
二或更多個待接合工件較佳地包含： 裝置或晶粒、及基材；或 基材及印刷電路板(PCB)；或 印刷電路板及散熱器。
此類工件特別適合藉由焊料材料接合，此係因為此類工件必須具有高散熱，且展現由CTE不匹配所致之低應力對其等而言係有益的。
在進一步態樣中，本發明提供一種製造本文所述之焊料材料的方法，該方法包含： 提供二或更多層焊料、 提供一層核心材料、及 將該等焊料層層壓於該核心材料層之任一側上。
為了避免疑慮，第一態樣之優點及較佳特徵同樣適用於此態樣。取決於焊料及核心材料以及處理條件，在層壓後，結構厚度有減少。必須考慮該減少因素以達到目標尺寸。
核心材料層較佳地係呈帶之形式且/或焊料層係呈帶之形式。
帶較佳地係藉由澆注、擠製、或拉製(drawing)提供。
層較佳地係以共拉製製程、較佳地高壓共拉製製程層壓。
經層壓之層較佳地經切割及/或沖壓。
在進一步態樣中，本發明提供一種製造本文所述之焊料材料的方法，該方法包含： 提供一層核心材料、及 用焊料塗佈該核心材料。
核心材料層之表面較佳地在用焊料塗佈之前經清潔。此可導致核心與焊料之間的較強黏著性，從而減少脫層發生及由此導致的含有使用焊料材料形成之接點的裝置之可靠性損失。
用焊料塗佈核心材料包含使核心材料與熔融焊料浴接觸，例如藉由將核心材料浸於熔融焊料浴中。
可改變各種製程參數（諸如焊料浴溫度、帶通過浴的速度等）以控制焊料塗層厚度。
圖2顯示根據本發明之兩種類型的焊料材料之剖面圖。焊料材料包含夾置在焊料層10之間的核心層9。上圖中所示之焊料材料僅在頂側及底側具有焊料。側面上沒有焊料。另一焊料材料在核心之所有側上皆具有焊料。
現將關於下列非限制性實例描述本發明。 實例1
藉由高壓層壓製程製備焊料材料（預製件）。圖3顯示預製件之剖面的顯微影像。中央核心為300 µm厚，且係由銅形成。兩側上的焊料係Sn20%In2%Ag。焊料厚度係50至100 µm。藉由奈米快閃瞬態測量技術測量，此樣本之有效導熱率係約130 W/m.K。 實例2
以類似於實例1的方式製備一些預製件，但其等具有不同厚度的核心(Keff = 400 W/m.K)及焊料層(Keff = 54 W/m.K)。評估預製件之熱性能。表1顯示評估的熱阻及等效導熱率。相較於單獨焊料，厚界面之熱阻遠遠較低（等效Keff遠遠較高）。
長度(mm) 寬度(mm) 核心厚度(mm) 各側上的焊料厚度 熱阻(C/W) 等效Keff (W/m.K)
10 10 0.2 0.1 0.0420 95.2
10 10 0.2 0.05 0.0235 127.6
10 10 0.3 0.1 0.0445 112.3
10 10 0.3 0.05 0.0260 153.7
10 10 0.4 0.1 0.0470 127.6
10 10 0.4 0.05 0.0285 175.3
〔表2〕Cu核心預製件之所選實例與其估計的熱阻及等效導熱率。
現將參照下列編號的條項進一步描述本發明： 1.       一種焊料材料，其包含： 核心，其包含核心材料；及 焊料，其至少部分塗佈該核心。 2.       如條項1之焊料材料，其係用於電子總成中。 3.       如條項1或條項2之焊料材料，其中該核心係呈層之形式。 4.       如條項3之焊料材料，其中該核心層之厚度係100至500 µm、較佳地係200至400 µm、更佳地係150至300 µm。 5.       如條項3或條項4之焊料材料，其中焊料係呈層之形式，且其中該核心係夾置在兩個焊料層之間。 6.       如條項6之焊料材料，其中該焊料層之厚度係25至150 µm、較佳地係50至100 µm。 7.       如前述條項中任一項之焊料材料，其係呈箔、條、膜、帶、或預製件之形式。 8.       如前述條項中任一項之焊料材料，其中該核心材料之熔點高於該焊料之回焊溫度。 9.       如前述條項中任一項之焊料材料，其中該核心材料之導熱率大於該焊料之導熱率。 10.     如條項9之焊料材料，其中該核心材料具有大於或等於65 W/m.K、較佳地大於65 w/m.K、更佳地大於70 W/m.k、甚至更佳地大於75 W/m.K之導熱率。 11.     如前述條項中任一項之焊料材料，其中該核心材料包含金屬及/或合金。 12.     如前述條項中任一項之焊料材料，其中該核心材料包含下列中之一或多者：銅、銀、鎳、鉬、鈹、鈷、鐵、銅鎢合金、鎳銀合金、銅鋅合金、及銅鎳鋅合金。 13.     如前述條項中任一項之焊料材料，其中該焊料係無鉛的。 14.     如前述條項中任一項之焊料材料，其中該焊料包含下列中之一或多者：In、SnIn合金（例如5至58% Sn、42至95% In）、SnBi合金（例如42至60% Sn、40至58% Bi）、BiIn合金（例如5至67% Bi、33至95% In）、AgIn合金（例如3% Ag、97% In）、SnAg合金（例如90至97.5% Sn、2.5至10% Ag）、SnCu合金（例如99.3至99.6% Sn、0.4至0.7% Cu）、InGa合金（例如99.3至99.5% In、0.5至0.7% Ga）、SnBiAgCu合金（例如50% Sn、47% Bi、1% Ag、2% Cu）、SnBiZn合金（例如65.5% Sn、31.5% Bi、3% Zn）、SnInAg合金（例如77.2% Sn、20% In、2.8% Ag）、SnBiAgCuIn合金（例如82.3% Sn、2.2% Bi、3% Ag、0.5% Cu、12% In）、SnZn合金（例如91% Sn、9% Zn）、SnCuInGa合金（例如92.8% Sn、0.7%Cu、6% In、0.5% Ga）、SnCuAg合金（例如95.5% Sn、3.8% Ag、0.7% Cu）、SnAgSb合金（例如95% Sn、3.5% Ag、1.5% Sb）、及SnCuSb合金（例如4至95% Sn、1至2% Cu、4% Sb）。 15.     如前述條項中任一項之焊料材料，其中該核心材料包含銅，且該焊料包含Sn-20In-2Ag合金。 16.     如前述條項中任一項之焊料材料，其中該核心及該焊料係呈層之形式，且其中該等焊料層係塗佈在該核心層之任一側上。 17.     如條項16之焊料材料，其中該核心層之厚度係100至500 µm、較佳地係200至400 µm、更佳地係150至300 µm。 18.     如條項16或條項17之焊料材料，其中該焊料層之厚度係25至150 µm、較佳地係50至100 µm。 19.     如前述條項中任一項之焊料材料，其中該核心係完全塗佈有該焊料。 20.     如前述條項中任一項之焊料材料，其具有大於65 W/m.K、較佳地大於80 W/m.K、更佳地大於100 W/m.K、甚至更佳地大於130 W/m.K之有效導熱率。 21.     一種如前述條項中任一項之焊料材料在焊接方法中的用途，該焊接方法係選自表面安裝技術(SMT)焊接、晶粒附接焊接、熱界面焊接、手工焊接、雷射及RF感應焊接、及熱超音波焊接。 22.     一種如條項1至20中任一項之焊料材料在晶粒附接（第I階）、基材附接（第II階）、或封裝至散熱器附接（第III階）中的用途。 23.     一種互連，其包含如條項1至20中任一項之焊料材料。 24.     一種IGBT、MOSFET、LED、或微處理器，其包含如條項1至20中任一項之焊料材料或如條項23之互連。 25.     一種形成焊料接點之方法，其包含： 在二或更多個待接合工件附近提供如條項1至20中任一項之焊料材料、及 加熱該焊料材料以形成經焊接接點。 26.     一種製造如條項1至20中任一項之焊料材料的方法，該方法包含： 提供二或更多層焊料、 提供一層核心材料、及 將該等焊料層層壓於該核心材料層之任一側上。 27.     如條項26之方法，其中該核心材料層係呈帶之形式且/或該焊料層係呈帶之形式。 28.     如條項27之方法，其中該等帶係藉由澆注、擠製、或拉製提供。 29.     如條項26至28中任一項之方法，其中該等層係以共拉製製程、較佳地高壓共拉製製程層壓。 30.     如條項26至29中任一項之方法，其中經層壓之該等層經切割及/或沖壓。 31.     一種製造如條項1至20中任一項之焊料材料的方法，該方法包含： 提供一層核心材料、及 用焊料塗佈該核心材料。 32.     如條項31之方法，其中該核心材料層之表面在用該焊料塗佈之前經清潔。 33.     如條項31或條項33之方法，其中用焊料塗佈該核心材料包含使該核心材料通過熔融焊料浴。
以上實施方式已藉由說明及繪示的方式提供，且不旨在限制隨附申請專利範圍之範疇。本文所繪示之目前較佳實施例中的許多變化對所屬技術領域中具有通常知識者而言將係顯而易見的，且仍在隨附申請專利範圍及其均等者之範疇內。
1:電子裝置 2:裝置 3:互連 4:基材 5:互連 6:印刷電路板(PCB) 7:互連 8:散熱器 9:核心層 10:焊料層
現將涉及下列非限制性圖式描述本發明，其中：
圖1顯示一般電子裝置之總成的示意圖。
圖2顯示根據本發明之焊料材料的替代配置之剖面示意圖。
圖3顯示根據本發明之焊料材料之剖面的顯微影像。
1:電子裝置
2:裝置
3:互連
4:基材
5:互連
6:印刷電路板(PCB)
7:互連
8:散熱器

Claims (28)

  1. 一種用於電子總成中之焊料材料，該焊料材料包含： 焊料層；及 核心層，其包含核心材料，該核心層係夾置在該等焊料層之間， 其中： 該核心材料之導熱率大於該焊料之導熱率。
  2. 如請求項1之焊料材料，其中該核心材料具有大於或等於65 W/m.K、較佳地大於65 w/m.K、更佳地大於70 W/m.k、甚至更佳地大於75 W/m.K之導熱率。
  3. 如請求項1或請求項2之焊料材料，其中該核心材料之熔點高於該焊料之回焊溫度，且
  4. 如前述請求項中任一項之焊料材料，其中該核心層之厚度係100至500 µm、較佳地係200至400 µm、更佳地係150至300 µm。
  5. 如前述請求項中任一項之焊料材料，其中各焊料層之厚度係25至150 µm、較佳地係50至100 µm。
  6. 如前述請求項中任一項之焊料材料，其中該核心材料包含金屬及/或合金。
  7. 如前述請求項中任一項之焊料材料，其中該核心材料包含下列中之一或多者：銅、銀、鎳、鉬、鈹、鈷、鐵、銅鎢合金、鎳銀合金、銅鋅合金、及銅鎳鋅合金。
  8. 如前述請求項中任一項之焊料材料，其中該焊料係無鉛的。
  9. 如前述請求項中任一項之焊料材料，其中該焊料包含下列中之一或多者：In、SnIn合金（例如5至58% Sn、42至95% In）、SnBi合金（例如42至60% Sn、40至58% Bi）、BiIn合金（例如5至67% Bi、33至95% In）、AgIn合金（例如3% Ag、97% In）、SnAg合金（例如90至97.5% Sn、2.5至10% Ag）、SnCu合金（例如99.3至99.6% Sn、0.4至0.7% Cu）、InGa合金（例如99.3至99.5% In、0.5至0.7% Ga）、SnBiAgCu合金（例如50% Sn、47% Bi、1% Ag、2% Cu）、SnBiZn合金（例如65.5% Sn、31.5% Bi、3% Zn）、SnInAg合金（例如77.2% Sn、20% In、2.8% Ag）、SnBiAgCuIn合金（例如82.3% Sn、2.2% Bi、3% Ag、0.5% Cu、12% In）、SnZn合金（例如91% Sn、9% Zn）、SnCuInGa合金（例如92.8% Sn、0.7%Cu、6% In、0.5% Ga）、SnCuAg合金（例如95.5% Sn、3.8% Ag、0.7% Cu）、SnAgSb合金（例如95% Sn、3.5% Ag、1.5% Sb）、及SnCuSb合金（例如4至95% Sn、1至2% Cu、4% Sb）。
  10. 如前述請求項中任一項之焊料材料，其中該核心材料包含銅，且該焊料包含Sn-20In-2Ag合金。
  11. 如前述請求項中任一項之焊料材料，其係呈箔、條(strip)、膜、帶(ribbon)、或預製件之形式。
  12. 如前述請求項中任一項之焊料材料，其中該核心係完全塗佈有該焊料。
  13. 如前述請求項中任一項之焊料材料，其具有大於65 W/m.K、較佳地大於80 W/m.K、更佳地大於100 W/m.K、甚至更佳地大於130 W/m.K之有效導熱率。
  14. 一種焊料接點，其包含如前述請求項中任一項之焊料材料。
  15. 一種互連，其包含如請求項1至13中任一項之焊料材料。
  16. 一種IGBT、MOSFET、LED、或微處理器，其包含如請求項1至13中任一項之焊料材料、如請求項14之焊料接點、或如請求項15之互連。
  17. 一種如請求項1至13中任一項之焊料材料在焊接方法中的用途，該焊接方法係選自表面安裝技術(Surface Mount Technology, SMT)焊接、晶粒附接焊接、熱界面焊接、手工焊接、雷射及RF感應焊接、及熱超音波焊接(thermos-sonic soldering)。
  18. 一種如請求項1至13中任一項之焊料材料在晶粒附接（第I階）、基材附接（第II階）、或封裝至散熱器附接（第III階）中的用途。
  19. 一種形成焊料接點之方法，其包含： 在二或更多個待接合工件附近提供如請求項1至13中任一項之焊料材料、及 加熱該焊料材料以形成經焊接接點。
  20. 如請求項19之方法，其中該二或更多個待接合工件包含： 裝置或晶粒、及基材；或 基材及印刷電路板(PCB)；或 印刷電路板及散熱器。
  21. 一種製造如請求項1至13中任一項之焊料材料的方法，該方法包含： 提供二或更多層焊料、 提供一層核心材料、及 將該等焊料層層壓於該核心材料層之任一側上。
  22. 如請求項21之方法，其中該核心材料層係呈帶之形式且/或該焊料層係呈帶之形式。
  23. 如請求項22之方法，其中該等帶係藉由澆注、擠製、或拉製(drawing)提供。
  24. 如請求項21至23中任一項之方法，其中該等層係以共拉製製程、較佳地高壓共拉製製程層壓。
  25. 如請求項21至24中任一項之方法，其中經層壓之該等層經切割及/或沖壓。
  26. 一種製造如請求項1至13中任一項之焊料材料的方法，該方法包含： 提供一層核心材料、及 用焊料塗佈該核心材料。
  27. 如請求項26之方法，其中該核心材料層之表面在用該焊料塗佈之前經清潔。
  28. 如請求項26或請求項27之方法，其中用焊料塗佈該核心材料包含使該核心材料與熔融焊料浴接觸。
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Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3721073B2 (ja) * 1999-12-28 2005-11-30 株式会社東芝 ハンダ材及びこれを用いたデバイス又は装置並びにその製造方法
JP2001230351A (ja) * 2000-02-14 2001-08-24 Shibafu Engineering Corp 電子モジュール用接合材料、モジュール型半導体装置及びその製造方法
CN100578778C (zh) * 2000-12-21 2010-01-06 株式会社日立制作所 电子器件
US7226669B2 (en) * 2003-08-29 2007-06-05 Aleris Aluminum Koblenz Gmbh High strength aluminium alloy brazing sheet, brazed assembly and method for producing same
JP4145287B2 (ja) * 2004-06-17 2008-09-03 株式会社ルネサステクノロジ 半導体装置および半導体装置の製造方法
JP2006341304A (ja) * 2005-06-10 2006-12-21 Tanaka Kikai Kogyo Kk 異種金属接合法
JP4458028B2 (ja) * 2005-11-29 2010-04-28 三菱電機株式会社 半導体装置
WO2008049006A2 (en) * 2006-10-17 2008-04-24 Fry's Metals, Inc. Materials for use with interconnects of electrical devices and related methods
JP2009147111A (ja) * 2007-12-14 2009-07-02 Fuji Electric Device Technology Co Ltd 接合材、その製造方法および半導体装置
US20110147438A1 (en) * 2009-12-23 2011-06-23 Carl Ludwig Deppisch Clad solder thermal interface material
US8348139B2 (en) * 2010-03-09 2013-01-08 Indium Corporation Composite solder alloy preform
JP5601275B2 (ja) * 2010-08-31 2014-10-08 日立金属株式会社 接合材料、その製造方法、および接合構造の製造方法
JP2013038330A (ja) * 2011-08-10 2013-02-21 Toshiba Corp 半導体装置の製造方法及び半導体装置
US10888958B2 (en) * 2018-05-29 2021-01-12 Indium Corporation Hybrid high temperature lead-free solder preform

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