Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/26—Processing photosensitive materials; Apparatus therefor
  • G03F7/40—Treatment after imagewise removal, e.g. baking
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
  • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
  • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
  • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
  • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Definitions

• the present invention relates to a substrate processing method and a substrate processing apparatus.
• a resist coating process in which a resist solution is applied to a film to be etched on a wafer surface to form a resist film, An exposure process for exposing with a predetermined pattern, a development process for developing a resist film on the exposed wafer to form a resist pattern, and an etching process for etching a base film using a resist pattern as a mask are sequentially performed. I have.
• the resist solution corresponding to short-wavelength light of 193 nm or less has relatively low etching resistance, and the resist pattern may be removed together with the base film during the etching process. As a result, the dimensions of the grooves and holes finally formed in the base film became larger than expected, and it was impossible to stably form a circuit pattern having the desired dimensions.
• Patent Document 1 JP-A-6-69118
• the present invention has been made in view of the advantages of the present invention, and provides a method of processing a substrate such as a wafer and a processing apparatus for a substrate, which improve the etching resistance of a resist pattern corresponding to a short wavelength exposure light source. Its purpose is to:
• a method for processing a substrate according to the present invention includes a developing step of developing a resist film on a substrate to form a resist pattern on the substrate, and thereafter, using the resist pattern as a mask.
• a fluorine-based liquid is supplied to the resist pattern between the developing step and the etching step, molecules on the surface of the resist pattern and fluorine-based molecules in the liquid combine to form a resist pattern. It is possible to increase the density of fluorine atoms on the surface of. As a result, the etching resistance can be improved even with a resist pattern corresponding to a short wavelength exposure light source.
• the fluorine-based liquid may be composed of a compound having a molecular weight of 50 or more. When pressed, most of the fluorine-based molecules in the liquid do not penetrate into the resist pattern but adhere to the surface, so that the molecules on the surface of the resist pattern can be effectively bonded to the fluorine-based molecules. it can.
• the fluorine-based liquid may contain an OH group.
• the fluorine-based molecules in the liquid are easily bonded to the molecules on the surface of the resist pattern, and the density of fluorine atoms on the surface of the resist pattern can be effectively increased.
• the method for treating a substrate may further include a step of supplying another liquid containing an OH group to the resist pattern between the developing step and the etching step.
• the surface of the resist pattern is activated by the action of OH groups contained in other liquids, and the reactivity between the surface of the resist pattern and the fluorine-based liquid is improved. You can.
• the fluorine-based liquid is supplied, the density of fluorine atoms on the surface of the resist pattern can be effectively increased.
• the step of supplying the other liquid containing an OH group may be performed before the step of supplying the fluorine-based liquid, and may be performed simultaneously with the step of supplying the fluorine-based liquid. It may be.
• the temperature of the fluorine-based liquid may be set higher than the temperature of another liquid containing the OH group.
• the deterioration of the other liquid containing an OH group due to the temperature can be suppressed.
• the other liquid containing an OH group may be a surfactant.
• energy may be supplied to the resist pattern to which the fluorine-based liquid has been supplied, so as to promote a reaction of the fluorine-based liquid with respect to a surface of the resist pattern.
• the step of accelerating the reaction of the fluorine-based liquid on the surface of the resist pattern may be performed by heating the substrate, or may be performed by irradiating the substrate with ultraviolet rays.
• the method for treating the substrate further includes a step of oxidizing the surface of the resist pattern after the developing step and before the step of supplying the fluorine-based liquid. Is also good.
• oxidizing the surface of the resist pattern before supplying the fluorine-based liquid the reactivity of the fluorine-based liquid with respect to the resist pattern can be improved.
• the density of fluorine atoms on the surface of the resist pattern can be effectively increased, and the etching resistance can be appropriately improved.
• the step of oxidizing the surface of the resist pattern may be performed by irradiating the substrate with ultraviolet rays while maintaining the substrate in an atmosphere containing oxygen gas.
• a substrate processing apparatus wherein a resist pattern is formed on a substrate by a development process, and then the underlying film is etched using the resist pattern as a mask.
• a liquid supply unit for supplying a fluorine-based liquid to the resist pattern until the resist pattern is removed.
• a fluorine-based liquid can be supplied to the resist pattern between the developing step and the etching step, molecules on the surface of the resist pattern and fluorine-based molecules in the liquid are separated. By bonding, the density of fluorine atoms on the surface of the resist pattern can be increased. As a result, the etching resistance of the resist pattern can be improved.
• the substrate processing apparatus may be configured to supply another liquid containing an OH group to the resist pattern between the time when the development processing is performed and the time when the etching processing is performed. A part may be further provided.
• the surface of the resist pattern is activated by the action of the O H group contained in the other liquid, and the bonding between the molecules on the surface of the resist pattern and the fluorine-based molecules can be promoted.
• the fluorine-based liquid is supplied, the density of fluorine atoms on the surface of the resist pattern can be effectively increased.
• the substrate processing apparatus supplies energy to the resist pattern to which the fluorine-based liquid has been supplied, and promotes a reaction of the fluorine-based liquid with respect to the surface of the resist pattern. In addition, it may be.
• the substrate processing apparatus may further include an oxidizing apparatus for oxidizing the surface of the resist pattern before the fluorine-based liquid is supplied.
• an oxidizing apparatus for oxidizing the surface of the resist pattern before the fluorine-based liquid is supplied.
• the surface of the resist pattern can be oxidized before the supply of the fluorine-based liquid, so that the reactivity of the fluorine-based liquid with respect to the resist pattern can be improved.
• the density of fluorine atoms on the surface of the resist pattern can be effectively increased, and the etching resistance can be appropriately improved.
• the oxidizing apparatus includes a storage container that stores the substrate, an oxygen-containing gas supply unit that supplies an oxygen-containing gas into the storage container, and an ultraviolet light that irradiates the substrate within the storage container with ultraviolet light. And an irradiation unit.
• the circuit pattern can be miniaturized.
• FIG. 1 is a plan view schematically showing a configuration of a coating and developing system according to the present embodiment.
• FIG. 2 is a front view of the coating and developing system of FIG. 1.
• FIG. 3 is a rear view of the coating and developing processing system of FIG. 1.
• FIG. 4 is an explanatory view of a longitudinal section schematically showing the configuration of a liquid supply device.
• FIG. 5 is an explanatory view of a cross section schematically showing a configuration of a liquid supply device.
• FIG. 6 is a perspective view of a liquid supply nozzle.
• FIG. 7 is a longitudinal sectional view of the liquid supply nozzle viewed from the X direction.
• FIG. 8 is a flowchart of wafer processing in the present embodiment.
• FIG. 9 is a longitudinal sectional view of a resist pattern showing a state where a protective film is formed.
• FIG. 10 is an explanatory cross-sectional view schematically showing a configuration of a liquid supply device provided with a developer supply nozzle.
• FIG. 11 is an explanatory view of a longitudinal section schematically showing the configuration of an ultraviolet irradiation device.
• FIG. 12 is an explanatory view of a longitudinal section showing an outline of the configuration of an acid siding device.
• FIG. 1 is a plan view schematically showing the configuration of a coating and developing treatment apparatus 1 as a substrate processing apparatus according to the present invention
• FIG. 2 is a front view of the coating and developing treatment system 1
• FIG. FIG. 2 is a rear view of the coating and developing apparatus 1.
• the coating / developing apparatus 1 carries, for example, 25 wafers W into and out of the coating / developing processing system 1 in units of cassettes, and carries wafers W into / out from the cassette C.
• Cassette station 2 a processing station 3 in which a plurality of various processing devices for performing predetermined processing in a single-wafer manner in the photolithography process are arranged in multiple stages, and a processing station 3 is provided adjacent to the processing station 3.
• an interface unit 4 for transferring a wafer W to and from an exposure apparatus (not shown).
• a plurality of cassettes C are placed at predetermined positions on the cassette mounting table 5. Can be placed in a line in the X direction (vertical direction in FIG. 1).
• the cassette station 2 is provided with a wafer carrier 7 movable on the carrier path 6 in the X direction.
• the wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and can be selected for the wafers W in each cassette C arranged in the X direction. Can be accessed.
• the wafer carrier 7 is rotatable in the ⁇ direction around the Z-axis.
• the wafer carrier 7 is capable of rotating with respect to a temperature control device 60 and a transition device 61 belonging to a third processing device group G3 on the processing station 3 side described later. Click here.
• the processing station 3 adjacent to the cassette station 2 includes, for example, five processing device groups G1 to G5 in which a plurality of processing devices are arranged in multiple stages.
• the first processing unit group G1 and the second processing unit group G2 are arranged in order on the cassette station 2 side.
• the cassette station 2 side force includes a third processing unit group G3, a fourth processing unit group G4, and a fifth processing unit group G5. Are located.
• a first transfer device 10 is provided between the third processing device group G3 and the fourth processing device group G4.
• the first transfer unit 10 can selectively access the processing units in the first processing unit group G1, the third processing unit group G3, and the fourth processing unit group G4 to transfer ueno and W.
• a second transfer device 11 is provided between the fourth processing device group G4 and the fifth processing device group G5. The second transfer device 11 can selectively access the processing devices in the second processing device group G2, the fourth processing device group G4, and the fifth processing device group G5 to transfer the wafers and W.
• the first processing apparatus group G1 includes a liquid processing apparatus that supplies a predetermined liquid to the wafer W to perform processing, for example, a resist coating apparatus that applies a resist liquid to the wafer W. , 21, 22, Bottom coating devices 23, 24 for forming an anti-reflection film for preventing the reflection of light during the exposure process are sequentially superimposed in five stages with downward force.
• the second processing apparatus group G2 includes a liquid processing apparatus, for example, a developing processing apparatus 30 to 32 for supplying a developing solution to the wafer W and performing a developing process, and a liquid supplying apparatus 33 for supplying a fluorine-based liquid to the wafer W. , 34 are superimposed in five steps in descending order.
• chemical chemicals for supplying various processing liquids to the liquid processing units in the processing unit groups G1 and G2 are provided at the bottom of the first processing unit group G1 and the second processing unit group G2. Chambers 40 and 41 are provided respectively.
• the third processing unit group G3 includes a temperature control unit 60, a transition unit 61 for transferring the wafer W, a temperature control unit for transferring the wafer W under high-precision temperature control.
• the high-precision temperature control devices 62 to 64 for adjusting the temperature and the high-temperature heat treatment devices 65 to 68 for heating the wafer W at a high temperature are superimposed in nine stages in order of the lower force.
• the high-precision temperature control device 70 for example, the high-precision temperature control device 70, the pre-bake devices 71 to 74 for heating the wafer W after the resist coating process, and the heating process for the wafer W after the development process are performed.
• Post-baking devices 75 to 79 are stacked in 10 steps with lower force in order.
• a plurality of heat processing apparatuses for heat-treating the wafer W for example, high-precision temperature controllers 80 to 83, and a post-exposure baking apparatus 84 to 89 for heating the exposed wafer W are performed.
• the lower forces are also stacked in 10 steps in order.
• a plurality of processing units are arranged on the positive side in the X direction of the first transfer unit 10.
• Adhesion devices 90, 91 and heating devices 92, 93 for heating the wafer W are stacked in four stages in descending order.
• a peripheral exposure device 94 for selectively exposing only the edge portion of the wafer W is disposed on the positive side in the X direction of the second transfer device 11.
• the interface unit 4 is provided with, for example, a wafer carrier 101 moving on a carrier path 100 extending in the X direction and a knocker cassette 102 as shown in FIG.
• the wafer carrier 101 is movable in the Z direction and rotatable in the ⁇ direction.
• the wafer carrier 101 is connected to an exposure device (not shown) adjacent to the interface unit 4, the buffer cassette 102 and the fifth processing device group G5.
• the wafer W can be transferred by accessing it.
• FIG. 4 is an explanatory view of a longitudinal section showing an outline of the configuration of the liquid supply device 33
• FIG. 5 is an explanatory view of a cross section showing an outline of the configuration of the liquid supply device 33.
• the liquid supply device 33 has a casing 33a.
• a spin chuck 120 as a holding member for holding the wafer W is provided at a central portion in the casing 33a.
• the spin chuck 120 has a horizontal upper surface, and on the upper surface, for example, a suction port (not shown) for sucking the wafer W is provided. By suction from this suction port, The nozzle W can be adsorbed on the spin chuck 120.
• the spin chuck 120 is provided with, for example, a chuck drive mechanism 121 for rotating and moving the spin chuck 120 up and down.
• the chuck drive mechanism 121 includes, for example, a rotation drive unit (not shown) such as a motor for rotating the spin chuck 120 at a predetermined speed, and a lift drive unit (not shown) such as a motor or a cylinder for raising and lowering the spin chuck 120. Have. By the chuck driving mechanism 121, the wafer W on the spin chuck 120 can be moved up and down at a predetermined timing and rotated at a predetermined speed.
• a cup 122 is provided for receiving and collecting the liquid scattered or dropped from the ueno or W.
• the cup 122 is formed, for example, in a substantially cylindrical shape with a closed bottom.
• the bottom 122a of the cup 122 is connected to, for example, a discharge pipe 123 communicating with a liquid discharge section of a factory.
• the liquid collected in the cup 122 can be discharged from the discharge pipe 123 to the outside of the liquid supply device 33.
• a rail 130 extending in the Y direction is formed on the negative side in the X direction (downward in FIG. 5) of the cup 122.
• the rail 130 is formed, for example, from the outside of the cup 122 in the negative Y direction (left direction in FIG. 5) to the vicinity of the end of the cup 122 in the positive Y direction (right direction in FIG. 5).
• An arm 132 that supports a liquid supply nozzle 131 as a liquid supply unit and another liquid supply unit is attached to the rail 130.
• the arm 132 is movable on the rail 130 in the Y direction by, for example, a driving unit 133, and the liquid supply nozzle 131 is moved from the standby unit 134 installed outside the cup 122 to the wafer W in the cup 122, for example. Can be transferred to
• the arm 132 is also movable in the vertical direction by, for example, the driving unit 133, and can move the liquid supply nozzle 131 up and down.
• the rail moving mechanism is constituted by the rail 130, the arm 132, and the driving unit 133.
• the liquid supply nozzle 131 has a main body 131a having a substantially rectangular parallelepiped shape slightly longer than the diameter dimension of the cylinder W, and an arc so that the longitudinal direction is along the X direction. Supported by system 132.
• a first liquid supply pipe 151 communicating with a first liquid supply source 150 installed outside the casing 33a is connected to the upper surface of the main body 131a.
• the first liquid supply source 150 includes, for example, a fluorine-based liquid, For example, a TFE solution containing TFE (trifluoroethanol) having a molecular weight of 50 or more and having an OH group is stored.
• the first liquid supply source 150 is provided with, for example, a temperature controller 152, and the first liquid supply source 150 can adjust the TFE solution supplied to the liquid supply nozzle 131 to a predetermined temperature.
• the first liquid supply pipe 151 is provided with an opening / closing valve 153, and the opening / closing valve 153 can supply the TFE solution of the first liquid supply source 150 to the liquid supply nozzle 131 at a predetermined timing and flow rate. .
• a second liquid supply pipe 161 communicating with, for example, the second liquid supply source 160 is connected to the upper surface of the main body 131a.
• the second liquid supply source 160 stores, for example, a liquid containing an OH group, for example, a surfactant as another liquid.
• the second liquid supply source 160 is provided with, for example, a temperature controller 162, and the second liquid supply source 160 can adjust the surfactant supplied to the liquid supply nozzle 131 to a predetermined temperature. it can.
• the second liquid supply pipe 161 is provided with an opening / closing valve 163, and the opening / closing valve 163 can supply the surfactant of the second liquid supply source 160 to the liquid supply nozzle 131 at a predetermined timing and flow rate.
• a first introduction pipe 170 communicating with the first liquid supply pipe 151 is formed at an upper portion in the main body 131a.
• the first introduction pipe 170 communicates with a first storage chamber 171 formed in the main body 131a.
• the first storage chamber 171 is formed, for example, between both ends along the longitudinal direction of the main body 131a, and can store the TFE solution introduced into the main body 13la.
• a second inlet pipe 180 communicating with the second liquid supply pipe 161 is formed in the upper part of the main body 13 la.
• the second introduction pipe 180 communicates with a second storage chamber 181 formed in the main body 131a.
• the second storage chamber 181 is formed between both ends along the longitudinal direction of the main body 131a so as to be, for example, juxtaposed with the first storage chamber 171.
• the activator can be stored.
• the first storage chamber 171 and the second storage chamber 181 communicate with the junction chamber 192 at the lower part of the main body 131a by the first communication path 190 and the second communication path 191 respectively.
• the merging chamber 192 is formed, for example, between both ends along the longitudinal direction of the main body 131a.
• the merging chamber 192 is formed, for example, so that the vertical section viewed from the X direction is substantially circular. Merging room 192 In, the supply pressure of the TFE solution supplied from the first storage chamber 171 and the supply pressure of the surfactant supplied from the second storage chamber 181 can be reduced.
• a collision rod 193 is provided along the longitudinal direction of the merging chamber 192.
• the TFE solution supplied from the first storage chamber 171 and the surfactant supplied from the second storage chamber 181 can collide with the collision rod 193 to promote, for example, mixing of the respective liquids. .
• the merging chamber 192 communicates with a plurality of discharge ports 194 opened on the lower surface of the main body 131a.
• the discharge ports 194 are formed at equal intervals in a line across both ends along the longitudinal direction of the main body 131a.
• the TFE solution or surfactant that has passed through the merging chamber 192 can be discharged downward in a straight line extending in the X direction.
• the discharge port 194 may be formed in a slit shape extending between both ends of the main body 131a.
• the liquid supply nozzle 131 discharges the TFE solution supplied from the first liquid supply source 150 and the surfactant supplied from the second liquid supply source 160 from the discharge port 194 at different timings. can do. Further, the liquid supply nozzle 131 can also mix the TFE solution and the surfactant in the merging chamber 192 and simultaneously discharge the TFE solution and the surfactant.
• Figure 8 is the main flow diagram of such a process.
• the wafer W on which the base film as the film to be etched is formed is taken out of the cassette on the cassette mounting table 5 by the wafer carrier 7, and the temperature of the third processing unit group G3 It is transported to the adjusting device 60.
• the wafer W transferred to the temperature control device 60 is temperature-controlled to a predetermined temperature, and then transferred to the bottom coating device 23 by the first transfer device 10 to form an anti-reflection film.
• the wafer W on which the anti-reflection film is formed is sequentially transferred by the first transfer device 10 to the heating device 92, the high-temperature heat treatment device 65, and the high-precision temperature control device 70, and is subjected to predetermined processing by each device. .
• the resist film material is, for example, compatible with an exposure light source having a short wavelength of ArF laser (wavelength: 193 nm) or less.
• a resin containing an alicyclic group, a metharylate resin, an atalylate resin. are used.
• the wafer W on which the resist film has been formed is transferred by the first transfer device 10 to the pre-baking device 71, and subsequently by the second transfer device 11, the peripheral exposure device 94, the high-precision temperature control device
• the sheets are sequentially conveyed to 83 and subjected to predetermined processing in each device.
• the wafer W is transferred to the exposure apparatus (not shown) by the wafer transfer body 101 of the interface unit 4.
• a predetermined pattern is exposed on the resist film on the wafer W by an exposure light source such as an ArF laser (S2 in FIG. 8).
• the wafer W having been subjected to the exposure processing is transferred to, for example, a post-exposure baking device 84 by a wafer transfer body 101 and subjected to a heating process, and then subjected to a high-precision temperature control device by a second transfer device 11. It is conveyed to 81 and the temperature is adjusted. After that, the wafer W is transferred to the development processing device 30 and the resist film on the wafer W is developed (S3 in FIG. 8). In this development process, for example, the exposed portion of the resist film is dissolved, and a resist pattern is formed on the wafer W.
• the wafer W after the development processing is transferred to, for example, the post-baking device 75 by the second transfer device 11, subjected to a heating process, and then transferred to the high-precision temperature control device 63 for temperature adjustment. Thereafter, the wafer W is transferred by the first transfer device 10 to the liquid supply device 33, where a predetermined treatment is performed on the resist pattern (S4 in FIG. 8).
• the wafer W carried into the liquid supply device 33 is placed and held on a spin chuck 120 as shown in FIG. 4, for example. Then, for example, as shown in FIG. 5, the liquid supply nozzle 131 which has been waiting in the waiting section 134 moves to the positive direction in the Y direction, and, for example, when viewed from a plane, the liquid supply nozzle 131 is located closer to the end of the negative side of W in the negative direction.
• the start position P1 indicated by the dotted line in FIG. 5
• the liquid supply nozzle 131 is lowered, and the discharge port 194 is brought closer to the surface of the wafer W.
• the on-off valve 163 is opened, and the surfactant whose temperature has been adjusted to a predetermined temperature in the second liquid supply source 160, for example, about 23 ° C. at room temperature, passes through the second liquid supply pipe 161. Then, the surfactant is introduced into the main body 13 la of the liquid supply nozzle 131, and the surfactant is discharged from the discharge port 194 through the main body 13 la.
• the liquid supply nozzle 131 discharges the surfactant and moves the wafer W from the start position P1 in the Y direction along the Y direction. Move to the outer stop position P2 on the direction side (indicated by the dotted line in FIG. 5).
• the surfactant is supplied to the entire surface of the resist pattern on the wafer W.
• the surface of the resist pattern is activated, and, for example, OH groups in the surfactant are bonded to molecules on the surface of the resist pattern. This improves the reactivity between the resist pattern surface and the TFE solution supplied later.
• the liquid supply nozzle 131 moves to the stop position P2
• the ejection of the surfactant is stopped, and the liquid supply nozzle 131 is returned to, for example, the start position P1.
• the on-off valve 153 is opened, and the TFE solution whose temperature has been adjusted to a predetermined temperature in the first liquid supply source 150, for example, about 30 to 50 ° C. higher than the surfactant, is supplied to the first liquid supply pipe. It is introduced into the main body 131a of the liquid supply nozzle 131 through 151. As a result, the TFE solution is discharged from the discharge port 194 of the liquid supply nozzle 131.
• the liquid supply nozzle 131 moves from the start position P1 to the stop position P2 again.
• the TFE solution is supplied to the entire surface of the resist pattern.
• the molecules on the surface of the resist pattern and the TFE molecules bond, and the density of fluorine atoms on the surface of the resist pattern increases. That is, as shown in FIG. 9, a protective film D having a high fluorine density is formed on the surface of the resist pattern P, thereby improving the etching resistance of the resist pattern p.
• the liquid supply nozzle 131 moves to the stop position P2
• the discharge of the TFE solution is stopped, and the liquid supply nozzle 131 is returned to the standby unit 134.
• the wafer W is rotated by the spin chuck 120, and the liquid on the wafer W is shaken off.
• the wafer W is transferred from the spin chuck 120 to the second transfer device 11 and unloaded from the liquid supply device 33.
• the wafer W carried out from the liquid supply device 33 is transferred to, for example, a high-temperature heat treatment device 66 as an energy supply device and heated. This heating promotes, for example, binding of TFE that has not reacted sufficiently on the surface of the resist pattern P. Then, in this high-temperature heat treatment apparatus 66, excess water is evaporated and the resist pattern P is baked and hardened.
• the wafer W that has been heated in the high-temperature heat treatment apparatus 66 is temperature-controlled in the high-precision temperature control apparatus 64, and then transferred to the transition apparatus 61 by the first transfer apparatus 10, and is transferred by the wafer transfer body 7. Returned to cassette C.
• the wafer W returned to the cassette C is transported to an etching device (not shown), and the underlying film is etched using the resist pattern P as a mask (S5 in FIG. 8).
• the TFE solution is supplied to the resist pattern P, so that the density of fluorine atoms on the surface of the resist pattern P increases.
• the etching resistance of the resist pattern P can be improved.
• TFE solution composed of TFE having a molecular weight of 50 or more was supplied to the resist pattern P, much of the TFE did not penetrate into the resist pattern P, and the surface of the resist pattern P was not By combining with the molecules, the density of fluorine atoms on the surface of the resist pattern P can be effectively increased.
• TFE contains an OH group, it easily bonds to, for example, a metathalylate-based resist material.
• the surfactant containing an OH group is supplied, so that the terminal force of the surface molecule of the resist pattern P becomes the SOH group, In addition, the surface molecule becomes unstable in terms of polarity. As a result, the surface of the resist pattern P is activated, and the reactivity between the TFE solution and the surface of the resist pattern is improved. Therefore, when the TFE solution is supplied, the binding of TFE on the surface of the resist pattern P is promoted.
• the temperature of the TFE solution is set higher than normal temperature, the reaction between the TFE solution and the surface of the resist pattern is further promoted. Also, since the temperature of the surfactant is set to a low temperature of about room temperature, it is possible to prevent, for example, the OH group of the surfactant from separating into the main chain and deteriorating the surfactant.
• the TFE solution and the surfactant may be supplied simultaneously.
• the on-off valves 153 and 163 are simultaneously opened, and the TFE solution and the surfactant are simultaneously introduced into the main body 131a.
• the TFE solution and the surfactant introduced into the main body 131a are mixed in the merging chamber 192, and the force of the discharge port 194 is also discharged.
• the liquid supply nozzle 131 moves from the start position P1 to the stop position P2 while discharging the mixture of the TFE solution and the surfactant, and the TFE solution and the surfactant are simultaneously supplied onto the surface of the resist pattern P. Is done. In such a case, since the TFE solution and the surfactant are supplied simultaneously, the time required for the treatment can be reduced.
• the TFE solution and the surfactant are supplied using the same liquid supply nozzle 131.
• the supply nozzle for supplying the TFE solution and the surfactant Separate supply nozzles for supplying the agent may be provided, and the surfactant and TFE solution may be supplied in order from each supply nozzle.
• the liquid supply device 33 may have a function of developing the wafer W.
• FIG. 10 shows an example in which the sub-arm 200 is attached to the rail 130 of the liquid supply device 33, and the sub-arm 200 supports a developer supply nozzle 201, for example.
• the sub arm 200 can be moved in the Y direction on the rail 130 by, for example, a driving unit 202, and the developer supply nozzle 201 is connected to a nozzle standby unit 204 provided outside the cup 122 in the positive Y direction.
• the wafer can be transferred onto the wafer W inside.
• the developer supply nozzle 201 has the same configuration as the liquid supply nozzle 131, for example.
• a nozzle arm 206 that is rotated around a vertical axis by a rotation drive shaft 205 is provided on the positive side in the Y direction of the cup 122.
• a rinsing liquid discharge nozzle 207 for discharging a rinsing liquid such as pure water is provided at the tip of the nozzle arm 206.
• the rinsing liquid discharge nozzle 207 moves to a position above the center of the wafer W in the cup 122 by the rotation of the nozzle arm 206 by the rotation drive shaft 205, and can discharge the rinsing liquid to the center of the wafer W.
• the developer supply nozzle 201 discharges the developer while discharging the developer.
• the wafer W moves along the direction to one end force of the wafer W to the other end.
• C The developer is supplied to the entire surface of W, and after a lapse of a predetermined time, a resist pattern is formed on wafer W.
• the wafer W is rotated, and the rinsing liquid discharge nozzle 207 moves above the center of the wafer W, discharges the rinsing liquid, and stops the development.
• the wafer W is rotated at a high speed, the rinse liquid is shaken off and dried.
• the liquid supply nozzle 131 moves from the start position P1 to the stop position P2, and the surfactant and the TFE solution are sequentially supplied as in the above-described embodiment.
• the wafer processing in the present embodiment can be performed in a shorter time.
• the wafer W is heated in the high-temperature heat treatment apparatus 66 to promote the reaction of the TFE solution on the surface of the resist pattern P.
• the reaction of the TFE solution may be promoted by irradiating the wafer W with ultraviolet rays.
• an ultraviolet irradiation device 210 as an energy supply device as shown in FIG.
• the ultraviolet irradiation device 210 includes, for example, a storage container 211 that stores and can seal the wafer W.
• a disk-shaped mounting table 212 on which the wafer W is mounted is provided.
• An ultraviolet irradiation unit 213 is provided on the ceiling of the storage container 211 so that the wafer W on the mounting table 212 can be irradiated with ultraviolet light.
• a gas supply pipe 215 communicating with a gas supply source 214 of, for example, a nitrogen gas that does not react with the resist pattern is connected to a side wall of the storage container 211.
• the gas supply pipe 215 is provided with, for example, an on-off valve 216.
• An exhaust pipe 217 is connected to a side wall of the storage container 211 opposite to the gas supply pipe 215.
• the gas supply pipe 215 is supplied with nitrogen gas and exhausted from the exhaust pipe 217, so that the inside of the container 211 can be maintained in a nitrogen gas atmosphere.
• the wafer W to which the TFE solution has been supplied is carried into the ultraviolet irradiation device 210, the wafer W is mounted on the mounting table 212, and the inside of the storage container 211 is replaced with a nitrogen gas atmosphere. You. Thereafter, ultraviolet light is irradiated from the ultraviolet irradiation unit 213 to the surface of the resist pattern P on the wafer W.
• the irradiation of the ultraviolet rays supplies energy to the surface of the resist pattern P, for example, the reaction of the TFE with insufficient bonding proceeds, and the density of fluorine atoms on the surface of the resist pattern P further increases. As a result, the resist pattern P Ching resistance can be further improved.
• the resist pattern P may be oxidized after the development processing and before the supply of the TFE solution.
• an oxidizing device 220 as shown in FIG.
• the oxidizing device 220 includes, for example, a storage container 221 that stores the wafer W, and a mounting table 222 is provided in the storage container 221.
• An ultraviolet irradiation unit 223 is provided on the ceiling of the container 221.
• an air supply pipe 225 as an oxygen-containing gas supply unit connected to an air supply source 224 is connected to a side wall of the storage container 221.
• An on-off valve 226 is provided in the air supply pipe 225, for example.
• An exhaust pipe 227 is connected to a side wall of the storage container 221 opposite to the air supply pipe 225. By supplying air from the air supply pipe 225 and exhausting from the exhaust pipe 227, the inside of the storage container 221 can be maintained in an air atmosphere containing oxygen.
• the wafer W is immediately carried into the oxidizing apparatus 220 and placed on the mounting table 222.
• the inside of the storage container 221 is replaced with an oxygen-containing atmosphere.
• the surface of the resist pattern P on the wafer W is irradiated with ultraviolet light, and the surface of the resist pattern P is oxidized.
• the wafer W is carried into the liquid supply device 33, and the TFE solution is supplied as in the above-described embodiment.
• the TFE solution is supplied to the resist pattern P.
• fluorine-based liquids for example, HFE (fluoroether, fluorinated ether) or fluorobenzene may be used instead of the TFE solution.
• a surfactant was supplied as another liquid containing an OH group, but acetylene glycol was used instead of the surfactant.
• a system chemical may be supplied.
• the present invention is applicable to the case of processing other substrates other than a wafer, such as a flat panel display (FPD) and a mask reticle for a photomask. Is also applicable.
• FPD flat panel display
• a mask reticle for a photomask Is also applicable.
• the present invention is useful for improving the etching resistance of a resist pattern, for example, in a lithography technique using an exposure light source having a shorter wavelength than an ArF laser.

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• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
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• Photosensitive Polymer And Photoresist Processing (AREA)
• Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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• 2004
  • 2004-05-10 JP JP2004139458A patent/JP4343022B2/ja not_active Expired - Fee Related
• 2005
  • 2005-04-28 WO PCT/JP2005/008128 patent/WO2005109476A1/ja not_active Ceased
  • 2005-04-28 US US11/596,459 patent/US7781342B2/en not_active Expired - Fee Related
• 2010
  • 2010-07-29 US US12/846,406 patent/US20100307683A1/en not_active Abandoned

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