WO2005087973A1 - 成膜装置及びその成膜方法 - Google Patents
成膜装置及びその成膜方法 Download PDFInfo
- Publication number
- WO2005087973A1 WO2005087973A1 PCT/JP2005/004511 JP2005004511W WO2005087973A1 WO 2005087973 A1 WO2005087973 A1 WO 2005087973A1 JP 2005004511 W JP2005004511 W JP 2005004511W WO 2005087973 A1 WO2005087973 A1 WO 2005087973A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- vacuum chamber
- film forming
- substrate
- reaction gas
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
- C23C14/0078—Reactive sputtering by exposing the substrates to reactive gases intermittently by moving the substrates between spatially separate sputtering and reaction stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Definitions
- the present invention relates to a film forming apparatus for forming a thin film, particularly a metal compound film by a physical vapor deposition method and a chemical vapor deposition method, and a film forming method using the same.
- a reactive sputtering method in which a reactive gas (eg, oxygen, nitrogen, fluorine gas, or the like) is introduced into a sputtering atmosphere is known.
- a reactive gas eg, oxygen, nitrogen, fluorine gas, or the like
- sputtering means for performing a sputtering process on a substrate to form a thin film
- irradiation means for irradiating a reactive gas to the thin film formed by the sputtering means to form a compound film
- a sputtering film forming apparatus that repeatedly performs a thin film forming step by a sputtering unit and a reaction step by an irradiation unit has been proposed (for example, see Patent Document 1).
- Patent Document 1 Japanese Patent No. 1694084
- Patent Document 2 Japanese Patent No. 2116322
- Patent Document 3 Patent No. 2695514 Disclosure of the invention
- the physical distance between the sputtering means and the irradiation means can be ensured, but it is necessary to increase the partial pressure of the reaction gas.
- it is necessary to actively carry out the atmosphere separation for example, by providing a conductance member for separating a film formation region by the sputtering means and a reaction region by the irradiation means, or by adding an exhaust system. Therefore, there is a problem that the manufacturing cost of the device is increased.
- an ion gun and a DC plasma are used as irradiation means for irradiating a reaction gas to a substrate.
- These apparatuses have a complicated structure, are inferior in maintenance, and have a reduced irradiation area. It is difficult to increase the area, and there is a problem that contamination of the electrode material and abnormal discharge are likely to occur.
- the present invention provides a film forming apparatus that can form a metal compound film having good characteristics at a higher film forming speed and can be easily configured at low cost. It is another object of the present invention to provide a film forming method for forming a metal compound film having good characteristics at a higher film forming rate by using the film forming apparatus.
- an invention according to claim 1 includes a vacuum chamber, a cylindrical rotary drum installed in a vacuum chamber and rotating while holding a substrate on an outer periphery, and a rotary drum.
- the invention according to claim 2 is characterized in that, in addition to the above-described configuration, the plasma irradiation unit converts the reaction gas into plasma using microwaves.
- the invention according to claim 3 is characterized in that the plasma irradiation means has a microwave generation source outside the vacuum chamber and one of a horn and an antenna provided in the vacuum chamber.
- the microwave generated in step (1) is introduced into the vacuum chamber through one of a horn and an antenna, and the microwave transforms the reaction gas into plasma.
- the plasma irradiation means has a microwave generation source outside the vacuum chamber and a dielectric vacuum window provided in the vacuum chamber.
- the generated microwave is introduced into a vacuum chamber through a vacuum window, and the reaction gas is turned into plasma by the microwave.
- the invention according to claim 5 includes a magnetic field forming means for forming a magnetic field in a region of the plasma irradiation means where plasma is generated, and the magnetic field forming means generates a magnetic field having an intensity of 87.5 mT. It is characterized in that it is formed in a sheet-like or cusp-like shape, and generates an electron cyclotron resonance plasma by its magnetic field.
- the invention described in claim 6 has a configuration in which the film forming means is a sputtering means, a vapor deposition means, and a chemical vapor deposition means, or a combination thereof.
- the invention according to claim 7 of the film forming method of the present invention is arranged such that a rotating drum holding a substrate is rotated in a vacuum chamber so that the held substrate is positioned at a position facing the film forming means.
- a reaction step of reacting with the film and has a configuration in which the film formation step and the reaction step are repeatedly performed.
- the reaction step is performed by a plasma irradiation unit.
- a plasma irradiation unit Forming a magnetic field with an intensity of 87.5 mT in the form of a sheet or a cusp in the region where the reaction gas is converted into plasma by the reaction gas, and generating an electron cyclotron resonance plasma by the magnetic field.
- the vacuum chamber is provided with a dielectric vacuum window.
- the reaction step includes a step of introducing a microwave from a vacuum window to generate a surface wave plasma.
- the invention according to claim 10 is characterized in that the plasma irradiating unit converts the reaction gas into plasma to generate ions, radicals, or both, or both.
- the eleventh aspect of the present invention has a configuration in which the film forming means is a displacement of the sputtering means, the vapor deposition means, and the chemical vapor deposition means.
- the inner surface of the vacuum chamber facing the region where the reaction gas is turned into plasma by the plasma irradiating means is covered with the dielectric, so that the reaction gas turned into plasma is lost. This has the effect of significantly reducing the activity and also reducing the electrical interaction between the diffused plasma and the inner surface of the vacuum chamber.
- the apparatus can be easily formed at low cost, and a metal compound film having good characteristics can be formed at a higher speed.
- the plasma irradiating means converts the reaction gas into plasma by microwaves, it produces low-pressure and high-density plasma as compared with a conventional apparatus using an ion gun or DC plasma. It becomes possible. Therefore, the atmosphere can be separated from the film formation region by the sputtering means and the reaction region by the irradiation means, and the apparatus can be easily configured at low cost, and the metal compound film having good characteristics can be formed more quickly. It can be formed at the film speed.
- the plasma irradiation means has a microwave generation source outside the vacuum chamber and a horn or an antenna provided in the vacuum chamber, and generates the microwave generated by the microwave generation source. It is also possible to introduce an open-ended wave into the vacuum chamber via a horn or an antenna, and use the microwave to transform the reaction gas into plasma.
- a magnetic field forming means for forming a magnetic field in a region where the reaction gas is turned into plasma by the plasma irradiation means is provided, and the magnetic field forming means converts the magnetic field having an intensity of 87.5 mT into a sheet shape or a cusp shape. It may be formed so that an electron cyclotron resonance plasma is generated by the magnetic field.
- the plasma irradiation means has a microwave generation source outside the vacuum chamber and a dielectric vacuum window provided in the vacuum chamber, and transmits the microwave generated by the microwave generation source to the vacuum window.
- the reaction gas may be introduced into the vacuum chamber via a gas and the reaction gas may be turned into plasma by the microwave.
- the reaction gas is converted into a plasma by a microwave, activated, and then irradiated with plasma in which the deactivation of the active species is greatly reduced.
- a metal compound film having good characteristics at a higher V and a higher film forming speed because of reacting with the thin film on the substrate.
- FIG. 1 (a) schematic plan view and (b) schematic side view of a film forming apparatus according to an embodiment of the present invention.
- FIG. 2 (a) a schematic plan view and (b) a schematic side view of a film forming apparatus according to another embodiment of the present invention.
- FIG. 3 (a) schematic plan view and (b) schematic side view of a film forming apparatus of a comparative example
- the film forming apparatus of the present invention is provided with a vacuum chamber, a cylindrical rotating drum installed in the vacuum chamber and rotating while holding the substrate on the outer periphery, and installed facing the outer peripheral surface of the rotating drum, Plasma irradiation means for forming a thin film on a substrate at an opposing position, and plasma irradiation means installed opposite to the outer peripheral surface of the rotating drum for plasma-irradiating the substrate at the opposing position with a reactive gas.
- the means is an inner surface of the vacuum chamber in a region where plasma is generated, which is covered with a dielectric.
- a method using a physical vapor deposition method or a chemical vapor deposition method can be applied.
- physical vapor deposition vacuum vapor deposition, sputtering and ion plating can be applied.
- the plasma irradiating means preferably irradiates microwaves, particularly plasma generated by ECR.
- FIGS. 1 (a) and 1 (b) 1 shows a carousel type sputtering film forming apparatus according to the present invention.
- the sputtering film forming apparatus 1 includes a vacuum chamber 2, and a cylindrical rotating drum 5 that rotates about a rotating shaft 4 while holding a substrate 3 on an outer periphery is provided at a substantially central portion in the vacuum chamber 2. Is provided.
- Two sputter cathodes (sputter means) 6 are provided on the inner peripheral surface of the vacuum chamber 1 at symmetrical positions with respect to the rotation axis 4, and these sputter cathodes 6 are connected to an external AC power source (not shown). It is connected to the. Also, a sputtering target 7 is set on the sputtering cathode 6!
- a deposition prevention plate 8 is provided extending to the vicinity of the outer periphery of the transfer drum 5.
- the space inside the vacuum chamber L is divided by the deposition-preventing plate 8 to form a film forming region 9 by sputtering means.
- the film formation region 9 is communicated with the outside of the vacuum chamber 1 by a sputter gas introduction pipe 10 provided through the vacuum chamber 1, and an external view is shown through the sputter gas introduction pipe 10.
- the sputtering gas is supplied to the film formation region 9 from the sputtering gas source.
- a conductance valve capable of adjusting the gas flow rate is provided between the sputter gas introduction pipe 10 and the gas source.
- a rectangular parallelepiped reaction region 11 formed by projecting the wall surface of the vacuum chamber 1 outward is provided at an intermediate position between the positions where the two sputter cathodes 6 are provided.
- a microwave antenna (plasma irradiating means) 12 is provided in the vacuum chamber 1 surrounding the reaction region 11, and the microwave antenna 12 is provided through an introduction window 13 and a waveguide 14 outside the vacuum chamber 1. Not shown, connected to microwave source!
- the microwave generated by the microwave generation source propagates from the waveguide 14 through the introduction window 13 and is introduced into the reaction region 11 by the microwave antenna 12.
- the inner surface of the vacuum chamber 1 surrounding the reaction region 11 is covered with a dielectric plate 15.
- a magnetic circuit (magnetic field forming means) 16 for generating electron cyclotron resonance (hereinafter, referred to as ECR) plasma is provided on the outer peripheral surface of the vacuum chamber 1 surrounding the reaction region 11, and the magnetic circuit 16 16 generates a static magnetic field for microwave discharge. Specifically, the magnetic circuit 16 is adjusted so that a magnetic field having an intensity of 87.5 mT is generated in a plane at a height of 30 mm from the surface of the magnetic circuit 16 to form a magnetic field parallel to the substrate.
- ECR electron cyclotron resonance
- the microwave antenna 12 is installed at a position that does not interfere with the region between the left and right magnetic circuits 16 in FIG. 1A.
- the reaction region 11 is communicated with the outside of the vacuum chamber 1 by a reaction gas introduction pipe 17 provided through the vacuum chamber 1, and an external view is shown through the reaction gas introduction pipe 17.
- the reaction gas is supplied to the reaction region 11 from the reaction gas source.
- a conductance valve capable of adjusting a gas flow rate is provided between the reaction gas introduction pipe 17 and the gas source.
- a metal thin film is formed on a substrate by sputtering, the substrate is transported to a reaction region where plasma is generated by rotation of a rotary drum, and the reaction gas is turned into plasma in the reaction region.
- Activation force Since the inner surface of the vacuum chamber facing the reaction area where the reaction gas is turned into plasma is covered with a dielectric, the deactivation of the reaction gas turned into plasma can be greatly reduced. .
- the thin film formed on the substrate is irradiated with the plasma in which the deactivation of the active species is greatly reduced, a metal compound having good characteristics can be obtained at a higher film formation rate.
- the film forming method according to the present embodiment is a method of forming a thin film on a substrate in a vacuum chamber by rotating a rotating drum holding the substrate and sequentially transporting the substrate, and forming a thin film on the substrate at a position where the substrate faces the film forming unit
- a reaction step of irradiating a plasma-treated reaction gas at a position where the substrate is opposed to a plasma irradiation region in which the inner surface of the vacuum chamber is covered with a dielectric to react a thin film on the substrate The film forming step and the reaction step can be sequentially repeated.
- the film forming means is sputtering, but is not limited to this.
- physical vapor deposition means such as vacuum vapor deposition and ion plating
- chemical vapor deposition means such as plasma CVD can be applied.
- the substrate 3 is held on the outer periphery of the rotary drum 5, and a predetermined sputtering target 7 is set. Set on the sputter cathode 6.
- the inside of the vacuum chamber 1 is evacuated by the evacuation system via the evacuation port 18, and a sputter gas is introduced from the sputter gas introduction pipe 10 and a reaction gas is introduced from the reaction gas introduction pipe 17 into the vacuum chamber 1. I do. Thereby, the inside of the vacuum chamber 1 is brought into a predetermined pressure state.
- the rotating position of the rotating drum 5 is changed to the sputtering position, that is, the substrate 3 held on the rotating drum 5 is placed on the side of the sputtering force source 6 where power is applied. It comes to a position existing in the film formation region 9.
- the sputtering target 7 on the sputtering cathode 6 is sputtered by the sputtering gas from the sputtering gas introduction pipe 10, and a thin film is formed on the substrate 3 held on the rotating drum 5 (thin film forming step).
- the rotating position of the rotating drum 5 is separated from the sputtering position and becomes a reaction position, that is, a position where the substrate 3 held by the rotating drum 5 is present in the reaction region 11.
- reaction gas converted into plasma by the microwave from the microwave antenna 12 reacts with the thin film formed on the substrate 3 in the thin film forming step to form a compound film (reaction step).
- the thin film forming step and the reaction step are alternately repeated a plurality of times to obtain a desired compound film.
- the reaction gas is converted into plasma by microwave, activated, and then irradiated with plasma in which the deactivation of the active species is greatly reduced.
- a metal compound film having good characteristics can be formed at a higher film forming rate.
- microwaves are applied to the vacuum chamber 1 via the microwave antenna 12.
- a horn may be used instead of the microwave antenna 12, and microwaves may be introduced into the vacuum chamber 1!
- a vacuum window 20 for generating a surface wave plasma formed of a dielectric material is provided in the vacuum chamber 1, and a microwave (not shown) is formed through the vacuum window 20. Microwaves generated at the source may be introduced into the vacuum chamber.
- the sputtering apparatus of the present embodiment is applicable to various compound films, for example, an oxide film / nitride film, a fluoride film, and the like.
- a reactive gas is selected according to a desired compound film.
- the present invention is not limited to the above-described embodiment, but can be variously modified as needed.
- a glass substrate 3 is set as a substrate 3 on a rotating drum 5, and a Ta target 7 is set as a sputtering target 7.
- Evacuation was performed to increase the pressure in the vacuum chamber 1 to 5 ⁇ 10 ′′ 5 Pa.
- argon gas was introduced at a flow rate of 30 sccm from the sputter gas introduction pipe 10 and the reaction gas introduction pipe 17 was introduced.
- Oxygen gas was introduced at a flow rate of 100 sccm, and the pressure in the vacuum chamber 1 was set to 0.3 Pa.
- microwave of lkW was introduced through microwave antenna 12.
- the sputtering film forming apparatus 30 shown in FIG. 3 is obtained by removing the dielectric plate 15 from the configuration of the sputtering film forming apparatus 1 shown in FIG. With this sputtering film forming apparatus 30, a film was formed under the same film forming conditions as in Example 1. Analysis of the thus obtained film, extinction ⁇ number with 9 X 10- 5, been made of a film significantly optical characteristics than the optical thin film obtained is inferior in Example 1.
- the film forming apparatus and the film forming method of the present invention can greatly reduce the deactivation of active species of generated plasma. Useful for the method.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
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- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2005800009575A CN1842612B (zh) | 2004-03-15 | 2005-03-15 | 成膜装置及其成膜方法 |
JP2006519416A JP4773347B2 (ja) | 2004-03-15 | 2005-03-15 | 成膜装置及びその成膜方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2004073173 | 2004-03-15 | ||
JP2004-073173 | 2004-03-15 |
Publications (1)
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WO2005087973A1 true WO2005087973A1 (ja) | 2005-09-22 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/JP2005/004511 WO2005087973A1 (ja) | 2004-03-15 | 2005-03-15 | 成膜装置及びその成膜方法 |
Country Status (4)
Country | Link |
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JP (1) | JP4773347B2 (ja) |
CN (1) | CN1842612B (ja) |
TW (1) | TWI384086B (ja) |
WO (1) | WO2005087973A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007186773A (ja) * | 2006-01-16 | 2007-07-26 | Bridgestone Corp | 成膜方法及び装置 |
KR100838045B1 (ko) * | 2007-11-28 | 2008-06-12 | 심문식 | 스퍼터링과 이온 빔 증착을 이용한 산화박막 증착장치 |
CN101692485B (zh) * | 2009-09-30 | 2011-11-02 | 东莞宏威数码机械有限公司 | 密封箱 |
JP2021113337A (ja) * | 2020-01-16 | 2021-08-05 | 日新電機株式会社 | スパッタリング装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6533511B2 (ja) * | 2015-06-17 | 2019-06-19 | 株式会社シンクロン | 成膜方法及び成膜装置 |
JP6392912B2 (ja) * | 2017-01-31 | 2018-09-19 | 学校法人東海大学 | 成膜方法 |
CN109023245B (zh) * | 2017-12-08 | 2020-04-03 | 西安穿越光电科技有限公司 | 一种高稳定性oled蒸镀设备 |
CN111074225A (zh) * | 2020-01-09 | 2020-04-28 | 上海嘉森真空科技有限公司 | 一种微波等离子辅助的溅射光学成膜方法 |
Citations (4)
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JPH056751A (ja) * | 1991-02-20 | 1993-01-14 | Agency Of Ind Science & Technol | 活性酸素発生装置 |
JPH06291375A (ja) * | 1993-04-01 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 薄膜超電導体の製造方法及びその製造装置 |
JP3057185B2 (ja) * | 1991-08-21 | 2000-06-26 | 横河電機株式会社 | 波形表示装置 |
JP2002256429A (ja) * | 2001-02-28 | 2002-09-11 | Tomonobu Hata | スパッタリング装置 |
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JPH01298151A (ja) * | 1988-05-25 | 1989-12-01 | Raimuzu:Kk | 化合物薄膜の形成方法 |
JP2775053B2 (ja) * | 1988-08-19 | 1998-07-09 | 塩野義製薬株式会社 | モルフィン類を含有する外用製剤 |
JPH0298151A (ja) * | 1988-10-04 | 1990-04-10 | Nec Corp | ワイヤーボンダのカットクランプ装置 |
JPH0310081A (ja) * | 1989-03-31 | 1991-01-17 | Anelva Corp | 真空放電装置 |
JPH08203881A (ja) * | 1995-01-30 | 1996-08-09 | Aneruba Kk | 表面処理装置 |
JP3077623B2 (ja) * | 1997-04-02 | 2000-08-14 | 日本電気株式会社 | プラズマ化学気相成長装置 |
JP2000202349A (ja) * | 1999-01-20 | 2000-07-25 | Fuji Photo Film Co Ltd | 塗布装置 |
JP3862215B2 (ja) * | 2001-12-17 | 2006-12-27 | 富士フイルムホールディングス株式会社 | 蛍光体シート製造装置 |
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2005
- 2005-03-15 TW TW94107911A patent/TWI384086B/zh active
- 2005-03-15 WO PCT/JP2005/004511 patent/WO2005087973A1/ja active Application Filing
- 2005-03-15 CN CN2005800009575A patent/CN1842612B/zh active Active
- 2005-03-15 JP JP2006519416A patent/JP4773347B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH056751A (ja) * | 1991-02-20 | 1993-01-14 | Agency Of Ind Science & Technol | 活性酸素発生装置 |
JP3057185B2 (ja) * | 1991-08-21 | 2000-06-26 | 横河電機株式会社 | 波形表示装置 |
JPH06291375A (ja) * | 1993-04-01 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 薄膜超電導体の製造方法及びその製造装置 |
JP2002256429A (ja) * | 2001-02-28 | 2002-09-11 | Tomonobu Hata | スパッタリング装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007186773A (ja) * | 2006-01-16 | 2007-07-26 | Bridgestone Corp | 成膜方法及び装置 |
KR100838045B1 (ko) * | 2007-11-28 | 2008-06-12 | 심문식 | 스퍼터링과 이온 빔 증착을 이용한 산화박막 증착장치 |
WO2009069891A1 (en) * | 2007-11-28 | 2009-06-04 | Mun-Sik Chim | Sputtering and ion beam deposition |
CN101692485B (zh) * | 2009-09-30 | 2011-11-02 | 东莞宏威数码机械有限公司 | 密封箱 |
JP2021113337A (ja) * | 2020-01-16 | 2021-08-05 | 日新電機株式会社 | スパッタリング装置 |
JP7415155B2 (ja) | 2020-01-16 | 2024-01-17 | 日新電機株式会社 | スパッタリング装置 |
Also Published As
Publication number | Publication date |
---|---|
TW200533773A (en) | 2005-10-16 |
CN1842612B (zh) | 2010-12-08 |
CN1842612A (zh) | 2006-10-04 |
JP4773347B2 (ja) | 2011-09-14 |
JPWO2005087973A1 (ja) | 2008-01-31 |
TWI384086B (zh) | 2013-02-01 |
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