WO2005076682A1 - 多層プリント配線板 - Google Patents
多層プリント配線板 Download PDFInfo
- Publication number
- WO2005076682A1 WO2005076682A1 PCT/JP2005/001610 JP2005001610W WO2005076682A1 WO 2005076682 A1 WO2005076682 A1 WO 2005076682A1 JP 2005001610 W JP2005001610 W JP 2005001610W WO 2005076682 A1 WO2005076682 A1 WO 2005076682A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- power supply
- conductor
- holes
- conductor layer
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 888
- 239000004020 conductor Substances 0.000 claims abstract description 534
- 239000000758 substrate Substances 0.000 claims abstract description 248
- 239000011229 interlayer Substances 0.000 claims abstract description 106
- 239000003990 capacitor Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 abstract description 64
- 239000011347 resin Substances 0.000 abstract description 64
- 230000007257 malfunction Effects 0.000 abstract description 50
- 239000011162 core material Substances 0.000 description 254
- 229910052751 metal Inorganic materials 0.000 description 63
- 239000002184 metal Substances 0.000 description 63
- 238000000034 method Methods 0.000 description 46
- 230000000694 effects Effects 0.000 description 37
- 238000009413 insulation Methods 0.000 description 34
- 238000007747 plating Methods 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 26
- 229910000679 solder Inorganic materials 0.000 description 26
- 230000008859 change Effects 0.000 description 21
- 230000008569 process Effects 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000012360 testing method Methods 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 239000010949 copper Substances 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 239000002344 surface layer Substances 0.000 description 13
- 239000011889 copper foil Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 9
- 238000011049 filling Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000000945 filler Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000007772 electroless plating Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 230000000149 penetrating effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000019197 fats Nutrition 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- 241000531908 Aramides Species 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229920003235 aromatic polyamide Polymers 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- -1 conoret Chemical compound 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004745 nonwoven fabric Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- VPSXHKGJZJCWLV-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(1-ethylpiperidin-4-yl)oxypyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)OC1CCN(CC1)CC VPSXHKGJZJCWLV-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- UXHQLGLGLZKHTC-CUNXSJBXSA-N 4-[(3s,3ar)-3-cyclopentyl-7-(4-hydroxypiperidine-1-carbonyl)-3,3a,4,5-tetrahydropyrazolo[3,4-f]quinolin-2-yl]-2-chlorobenzonitrile Chemical compound C1CC(O)CCN1C(=O)C1=CC=C(C=2[C@@H]([C@H](C3CCCC3)N(N=2)C=2C=C(Cl)C(C#N)=CC=2)CC2)C2=N1 UXHQLGLGLZKHTC-CUNXSJBXSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- 244000126211 Hericium coralloides Species 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 206010041235 Snoring Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- AGJXDKGTTMVHOU-UHFFFAOYSA-N [4-(hydroxymethyl)-1h-imidazol-5-yl]methanol Chemical compound OCC=1N=CNC=1CO AGJXDKGTTMVHOU-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 235000014121 butter Nutrition 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- VFFQCUJVGMRYIF-UHFFFAOYSA-N copper;1h-imidazole Chemical compound [Cu+2].C1=CNC=N1 VFFQCUJVGMRYIF-UHFFFAOYSA-N 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000013530 defoamer Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 244000062645 predators Species 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000002594 sorbent Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
- H05K3/4608—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated comprising an electrically conductive base or core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/13111—Tin [Sn] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0105—Tin [Sn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01084—Polonium [Po]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0352—Differences between the conductors of different layers of a multilayer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09536—Buried plated through-holes, i.e. plated through-holes formed in a core before lamination
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09736—Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/098—Special shape of the cross-section of conductors, e.g. very thick plated conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/429—Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4641—Manufacturing multilayer circuits by laminating two or more circuit boards having integrally laminated metal sheets or special power cores
Definitions
- the present invention relates to a multilayer printed wiring board, and does not cause malfunction or error even when a high-frequency IC chip, particularly an IC chip in a high-frequency region of 3 GHz or more, is mounted.
- a multilayer printed wiring board that can improve the performance.
- an interlayer insulating resin is formed on both sides or one side of a core substrate in which a through hole is formed, so that conduction between layers is achieved. Via holes are opened by laser or photoetching to form an interlayer insulating layer. A conductor layer is formed in the via hole and on the interlayer resin insulation layer by plating or the like, and a pattern is formed through etching or the like to form a conductor circuit. Furthermore, by repeatedly forming the interlayer insulating layer and the conductor layer, a build-up multilayer printed wiring board can be obtained.
- solder bumps and external terminals (PGA, ZBGA, etc.) on the surface layer as necessary, it becomes a substrate or package substrate on which IC chips can be mounted.
- the IC chip is electrically connected between the IC chip and the substrate by performing C4 (flip chip) mounting.
- lands are formed on a core substrate in which through holes are filled with a filling resin, an interlayer insulating layer having via holes on both surfaces is applied, a conductor layer is applied by an additive method, and the lands are connected. It is possible to obtain a multilayer printed wiring board on which high density and fine wiring are formed.
- Patent Document 1 JP-A-6-260756
- Patent Document 2 JP-A-6-275959
- the present inventors have set the thickness of the conductor on the core substrate to be larger than the thickness of the conductor layer on the interlayer insulating layer as described in Japanese Patent Application No. 2002-233775. To do so.
- the insulation interval between the wiring patterns is reduced, resulting in a printed wiring board having poor insulation reliability.
- An object of the first invention is to provide an IC chip in a high-frequency region, particularly a multilayer printed wiring board which can form a printed circuit board or a package board having high insulation reliability without causing malfunction or error even if it exceeds 3 GHz. It is to propose.
- the present inventor examined using a multilayer core substrate as a core substrate and providing a thick conductor layer in the multilayer core substrate. did.
- the multilayer printed wiring board 10 uses a multilayer core substrate 30.
- an interlayer insulating layer 50 having a via hole 60 and a conductor circuit 58 formed thereon, and a via hole 160 and a conductor circuit 158 are formed.
- the inter-layer insulation layer 150 is provided!
- a solder resist layer 70 is formed on the upper layer of the via hole 160 and the conductor circuit 158, and bumps 76U and 76D are formed on the via hole 160 and the conductor circuit 158 through the opening 71 of the solder resist layer 70. I have.
- the power supply circuit 34P on the upper side of the multilayer core substrate 30 is formed as a plane layer for power supply
- the lower ground circuit 34E is formed as a ground plane layer.
- the inner layer earth circuit 16E and the dummy land 16D extending from the power supply through hole 36T HP extend on the inner surface side of the multilayer core substrate 30, and the power supply circuit 16P and the earth through hole 36THE extend on the back side.
- Dummy land 16D is formed.
- a dummy land is a conductor circuit that extends through-hole force and is not connected to other wiring in the same layer, or a wiring pattern that is electrically connected to the same potential (Fig. 36 (A) means 16D1).
- the upper ground circuit 16E is formed as a ground plane layer
- the lower power circuit 16P is formed as a power plane layer.
- FIG. 36 (A) shows a cross section taken along line X4-4 in FIG. 35
- FIG. 36 (B) shows a cross section taken along line X5-X5.
- a through-hole 36 is provided for connection between the front and back of the multilayer core substrate 30!
- the dummy land 16D is provided around the through hole 36 that is not connected to the ground circuit 16E and the power supply circuit 16P.
- Around the dummy land there is a non-conductor-formed portion (non-conductor-formed portion 35) to secure the insulation between the dummy land and other wiring patterns.
- a dummy land 16D1 may be formed around the through-holes.
- the switch is turned on, and a force is generated a plurality of times.
- the voltage drop was improved.
- the first and second voltage drops were not significantly improved.
- the second invention has been made to solve the above-described problem, and an object of the invention is to provide an IC chip in a high-frequency region, in particular, a circuit which does not cause malfunction or error even if it exceeds 3 GHz.
- Another object of the present invention is to propose a multilayer printed wiring board which can constitute a printed board or a package board.
- the objective is to improve the first and second voltage drops that generate power when the switch is turned on.
- a first invention is a multilayer printed wiring board in which an interlayer insulating layer and a conductor layer are formed on a core substrate and are electrically connected through via holes, and for a power supply or a ground for the core substrate. At least one of the sums of the thicknesses of the conductor layers is larger than the thickness of the conductor layer on the interlayer insulating layer.
- the core substrate is a multilayer core substrate, and the thickness of the conductor layers only on the front and back of the core substrate is increased, but the sum of the conductor layers is increased.
- the total thickness of the front and back conductor layers and the inner conductor layer of the core substrate is a thickness that contributes to power supply to the IC and its stability.
- it is applied when the surface conductor layer and the inner conductor layer have an electrical connection and two or more electrical connections.
- the conductor layer of the core as a ground layer, it is possible to reduce the noise superimposed on the signal and the power supply to the IC chip and to stably supply the power supply to the IC. Therefore, when an IC chip is mounted on the multilayer printed board, the loop inductance from the IC chip to the board and the power supply can be reduced. As a result, power shortage during initial operation is reduced, and power shortage is unlikely to occur. Therefore, even if an IC chip in the high-frequency region is mounted, no malfunction or error will occur during initial startup. Also, since noise is reduced, no malfunction or error occurs.
- the thickness of each conductor layer of the multilayer core substrate while maintaining the sum of the thicknesses of the conductor layers of the multilayer core substrate. That is, even if a fine wiring pattern is formed, the insulation interval between the wiring patterns can be reliably ensured, so that a printed wiring board with high insulation reliability can be provided.
- Another effect is that by increasing the thickness of the power supply or grounding conductor layer of the core substrate, the strength of the core substrate is increased. Thus, even if the core substrate itself is made thinner, warpage and generated stress can be reduced. It is possible to relax by itself.
- the conductor layer on the interlayer insulating layer is a conductor layer on the interlayer insulating layer in a so-called build-up portion of a build-up printed wiring board (in the present application, 58, 158 in FIG. 8). ).
- the power supply layer of the core substrate may be disposed on the surface layer, the inner layer, or both of the substrate.
- the substrate may be arranged on at least one of the front surface, the back surface, and the inner layer of the substrate, or on a plurality of layers. In the case of an inner layer, it may be multilayered over two or more layers. The remaining layer should be the ground layer. Basically, if the thickness of the conductor layer for the power supply of the core substrate is thicker than the conductor layer of the interlayer insulating layer, the effect is obtained. It is desirable to alternately arrange the power supply conductor layer and the ground conductor layer to improve the electrical characteristics!
- the power supply layer is placed between the IC chip and the external terminals or capacitors. This is because the distance between the two is uniform, the cause of obstruction is reduced, and power shortage is suppressed.
- a multilayer printed wiring board in which an interlayer insulating layer and a conductor layer are formed on a core substrate and are electrically connected via a via hole.
- ⁇ 2 is ⁇ 1 ⁇ 40 ⁇ 2.
- ⁇ ⁇ of the sum of the thicknesses of the power supply conductor layers of the multilayer core substrate is 1.2 ⁇ 2 ⁇ 1 ⁇ 40 ⁇ 2. Within this range, it has been confirmed that IC chips do not malfunction or errors due to insufficient power (voltage drop).
- the core substrate in this case is a resin substrate in which a core material is impregnated with a glass epoxy resin or the like, a ceramic substrate, a metal substrate, a composite core substrate using a composite of resin, ceramic, and metal.
- a substrate in which a conductor layer is provided as an inner layer of these substrates a substrate using a multilayer core substrate in which three or more multilayered conductor layers are formed, and the like.
- a printed wiring board for forming a conductor layer such as plating and sputtering, which is generally performed on a substrate in which a metal is embedded. It is also possible to use the one formed by the above method.
- a multilayer printed wiring board in which an interlayer insulating layer and a conductor layer are formed on a core substrate and are electrically connected via a via hole.
- Te, 3 the sum of thickness of the conductor layer for ⁇ over scan of the multilayer core substrate alpha, when the thickness of the conductive layer on the interlayer insulating layer was alpha 2, alpha 3 and alpha 2 is, a 2 rather a 3 ⁇ 40 a 2 in a multilayer printed rooster board.
- noise superimposed on the signal power supply to the IC chip can be reduced.
- the multilayer printed wiring boards are formed of materials having the same thickness and are stacked. Then, a layer or substrate having a power supply layer as a conductor layer on a printed circuit board is defined as a core substrate.
- the multilayer core substrate has a relatively thick conductor layer as an inner layer and a relatively thin conductor layer as a surface layer
- the inner conductor layer is mainly composed of a power supply layer conductor layer or a ground conductor layer.
- it is a layer.
- the surface conductor layer may be used as a power supply or grounding conductor layer, or one surface may be used as a power supply conductor layer and the other surface may be grounded. It may be used as a conductive layer.
- the resin layer can be formed so as to cover the inner conductor layer. Is obtained. Therefore, undulation does not occur in the conductor layer of the interlayer insulating layer. Even if a thin conductor layer is arranged on the surface layer of the multilayer core substrate, a sufficient thickness of the conductor layer as the core conductor layer can be ensured by the thickness added to the inner conductor layer. By using these as a conductor layer for the power supply layer or a conductor layer for the ground, it becomes possible to improve the electrical characteristics of the multilayer printed wiring board.
- the inner conductor layer has a relatively large thickness of the conductor layer, and is used as a power supply layer, and the surface conductor layer sandwiches the inner conductor layer. It is also desirable that it be formed and used as a signal line. With this structure, the power supply described above can be strengthened.
- the core substrate may have a through hole pitch of 600 ⁇ m or less.
- an inner conductor layer is provided on both sides of an electrically isolated metal plate with a resin layer interposed therebetween, and further a resin layer is provided outside the inner conductor layer. It is preferable that a conductor layer on the surface is formed. Place an electrically isolated metal plate in the center Thereby, sufficient mechanical strength can be ensured. Furthermore, a metal layer is formed on both surfaces of the metal plate to form an inner conductor layer, and a resin layer is formed on the outer surface of the metal layer by forming a resin layer on the outside of the metal layer. Symmetrical properties on both sides of the film to prevent warping and swelling during heat cycles.
- the multilayer core substrate has an inner conductor layer with an insulating layer interposed on both sides of a metal plate having a low coefficient of thermal expansion such as a 36 alloy or a 42 alloy, and an insulating layer outside the inner conductor layer.
- the conductor layer on the surface may be formed.
- both surfaces of the metal plate are formed. Symmetry is provided to prevent the occurrence of warpage and swell in heat cycles.
- FIG. 10 shows the voltage of the IC chip on the vertical axis and the lapse of time on the horizontal axis.
- Figure 10 is a model of a printed wiring board without a power supply capacitor mounted with a high-frequency IC chip of 1 GHz or higher.
- Line A shows the change over time of the voltage of the IC chip at 1 GHz
- line B shows the change over time of the voltage of the IC chip at 3 GHz.
- This figure shows the third voltage drop among the voltage drops that occur multiple times when the switch is turned on. The change over time requires a large amount of power instantly when the IC chip starts to operate. If the supply is insufficient, the voltage will drop (points X and X '). After that, the supplied power is gradually filled, so that the voltage drop is eliminated.
- the power supply stored in the capacitor is discharged by connecting to an external capacitor to reduce the power shortage or the voltage drop. can do.
- FIG. 11 is a model of a printed circuit board having a capacitor.
- Line C shows the change over time in the voltage of a 1GHz IC chip with a small-capacity capacitor mounted.
- the degree of voltage drop is smaller than that of line A.
- the line D shows a time-dependent change as in the case of the line C, by mounting a capacitor having a larger capacity than that of the line C.
- the degree of the voltage drop is getting smaller as compared with the line C.
- Fig. 10 when the IC chip is in the higher frequency range, more capacitor capacity is required, and it is necessary to set the area where the capacitor is mounted. This makes it difficult to secure operation, and it is not possible to improve operation and function, and it becomes difficult in terms of high density.
- the power supply shortage or the voltage drop is decreasing as the sum of the thickness of the conductor layers of the core is increased. It can be said that the occurrence of malfunctions in functions and operations is reduced.
- the volume of the conductor layer increases, and as the volume increases, the conductor resistance decreases, so that there is no loss in the voltage and current in the transmitted power supply.
- the power loss is reduced and power is supplied, which prevents malfunctions and errors, etc.
- the power supply conductors on the core board are particularly large due to the sum of the thicknesses of the power supply conductor layers. The effect is obtained by making the sum of the thicknesses of the layers larger than the thickness of the conductor layer on the interlayer insulating layer.
- the core substrate has a built-in electronic component such as a capacitor, a dielectric layer, and a resistor, the effect is remarkable.
- a built-in electronic component such as a capacitor, a dielectric layer, and a resistor
- the distance from the dielectric layer can be reduced. Therefore, the loop inductance can be reduced. Power shortage or voltage drop can be reduced.
- the thickness of the conductor layer of the core substrate and the thickness of the conductor layer of the power supply layer are made larger than the thickness of the conductor layer on the interlayer insulating layer, so that the Since the conductor resistance of both the built-in capacitor and the power supply of the dielectric layer can be reduced, the transmission loss can be reduced, and the effect of the board with the built-in capacitor can be further enhanced.
- the material of the core substrate was verified using a resin substrate, but it was found that a ceramic or metal core substrate also exhibited the same effect.
- the conductor layer was made of a metal that also has copper power, it was confirmed that the effects of other metals were canceled out, and that malfunctions and errors would increase. It is considered that the difference in the material or the material forming the conductor layer has no effect on the effect. More preferably, the conductor layer of the core substrate and the conductor layer of the interlayer insulating layer are formed of the same metal. Since the characteristics and physical properties such as the electrical characteristics and thermal expansion coefficient do not change, the effects of the present application are achieved.
- the resistance in the conductor of the IC chip, the substrate and the power supply can be reduced, and the transmission loss is reduced. Therefore, the transmitted signal and the power supply exhibit the desired capability. As a result, malfunctions and errors do not occur because the functions and operations of the IC chip operate normally.
- the resistance of the conductor of the IC chip / substrate / ground can be reduced, the superimposition of noise on the signal line and power supply line can be reduced, and malfunctions and errors can be prevented.
- the first invention reduces the degree of power shortage (voltage drop) that occurs during the initial startup of the IC chip, and even if an IC chip in a high-frequency region, particularly an IC chip of 3 GHz or more, is mounted. Helped, can start without any problems. Therefore, the electrical characteristics and electrical connectivity can also be improved.
- the resistance in the circuit of the printed circuit board is made smaller than that of the conventional printed circuit board. be able to. Therefore, even if a noise is added and a reliability test (high-temperature high-humidity bias test) performed under high temperature and high humidity is performed, the time required for destruction becomes long, and the reliability can be improved.
- an interlayer insulating layer and a conductor layer are provided on a multilayer core substrate having three or more layers having a plurality of through holes for connecting the front surface and the back surface and having a conductor layer on the front surface and the back surface and an inner conductor layer.
- the plurality of through-holes are electrically connected to a power supply circuit, an earth circuit, or a signal circuit of an IC chip, and are formed from a number of power supply through-holes, a number of ground through-holes, and a number of signal through-holes.
- the power supply through-holes at least directly under the IC, or at least 70% or more of the power supply through-holes do not have a conductor circuit extending from the power supply through-hole in the grounding conductor layer, or
- ground through holes At least immediately below the IC or at least 70% of the ground through holes shall not have a conductor circuit extending from the ground through hole in the power supply conductor layer.
- an interlayer insulating layer and a conductor layer are formed on a multilayer core substrate of three or more layers having a plurality of through holes for connecting the front and back surfaces and having a conductor layer on the front and back surfaces and an inner conductor layer. Is formed on the printed wiring board where electrical connection is made via holes.
- the plurality of through-holes are electrically connected to a power supply circuit, an earth circuit, or a signal circuit of an IC chip, and are formed from a number of power supply through-holes, a number of ground through-holes, and a number of signal through-holes.
- some of the power supply through-holes directly below the IC do not have a conductor circuit extending from the power supply through-hole in the grounding conductor layer, and the ground through-hole
- some of the ground through holes directly under the IC among the many ground through holes are connected to the power supply conductor layer through the ground through hole.
- This is a printed wiring board characterized by having no conductor circuit that extends the Hall force.
- the power supply through-hole has no conductor circuit extending in the grounding conductor layer, and the power supply through-hole and the power supply conductor layer have a conductor circuit extending the grounding through-hole force in the power supply conductor layer.
- ground through holes are arranged in a lattice or in a staggered manner. In this case, it is preferable that the power supply through-hole and the ground through-hole are alternately located!
- the power supply through-hole does not have a conductor circuit extending in the grounding conductor layer, and the power supply through-hole does not have a dummy land.
- Through-hole force There is no conductor circuit to extend! /
- the grounding through hole is called V ⁇ Snorrehole, which does not have dummy land, and does not have grounding through hole, just dummy land.
- the sum a 1 of the thickness of the power supply conductor layer of the multilayer core substrate is a S a ⁇ O a 2 with respect to the thickness a 2 of the conductor layer on the interlayer insulating layer.
- the through hole of 70% or more has no dummy land in the inner layer of the multilayer core substrate.
- the wiring length for supplying power to the transistors of the IC is reduced, so that the voltage drop of the IC is less likely to occur.
- the wiring length for supplying power to the IC transistor becomes long. This is because the electric current easily flows on the surface of the conductor, and the wiring length in the case where the dummy land is provided is obtained by adding the wiring length of the dummy land surface to the wiring length of the through hole.
- the same effect can be obtained even if the through hole is a part directly below the IC without the dummy land. Because electricity flows preferentially through wiring with low resistance, power can be supplied to IC transistors via through holes that do not have dummy lands, even if some of the through holes do not have dummy lands That's why.
- the power supply through-hole and the ground through-hole without dummy lands should each be at least 30% of the total power supply through-hole and all ground through-holes, respectively. % Or more is preferable. If the number of through holes without dummy lands is small, electricity concentrates on such through holes, and the effect of the present invention is reduced.
- the power supply through-holes having no dummy land and the grounding through-holes having no dummy land are arranged in a lattice or staggered manner. In this case, they are more preferably arranged alternately. Because the mutual inductance is reduced, the power supply to the IC transistor is performed in a short time.
- a fourth effect is that the conductor area of the inner power supply layer and the ground layer in the multilayer core can be increased, so that the conductor resistance of both conductor layers is reduced, so that power is smoothly supplied to the transistors of the IC. Be done. Because there is no dummy land, closer to the through hole Thus, a power supply layer and an earth layer can be formed (see FIG. 37). When comparing the periphery of the through hole V and the periphery of the W in FIG. 37, since there is no dummy land in the W, a conductor layer can be formed close to the through hole, and thus more conductor layers are formed than the periphery of the V.
- the transistor of the IC is unlikely to be short of the power supply, so that a malfunction hardly occurs.
- the thicknesses of the conductor layers on the front and back surfaces of the multilayer core substrate and the inner conductor layer are increased. In particular, it is preferable to increase the thickness of the inner conductor layer.
- the distance X shown in FIG. 34 is preferably 15 to 150 m. If it is less than 15 m, insulation reliability will decrease. On the other hand, if it exceeds 150 / zm, the effect of improving the voltage drop becomes small.
- the dummy conductor is not provided in the through-hole directly under the IC or 70% or more, and by increasing the conductor thickness, the initial operation is improved.
- the main voltage drop that occurs (the first voltage drop and the third voltage drop) can be improved. Therefore, even if a high-frequency IC chip is mounted on the printed wiring board, a malfunction or an error in the initial startup does not occur. The same effect can be obtained even if the through hole without the dummy land is a part directly under the IC.
- the thickness of the inner layer is particularly thicker than the thickness of the conductor on the front and back surfaces of the multilayer core substrate, and the sum of the thicknesses of the conductor layers of the core (a1 This is effective when securing).
- through-hole lands are essential for the front and back conductor layers in order to establish electrical connection with the build-up layer formed thereon. If the thickness of the front and back conductor layers is large, it is necessary to increase the insulation distance between the through-hole land and other through-hole lands or other conductor circuits to ensure insulation reliability. This is because the pitch of the through holes cannot be narrowed. Also, if the conductor thicknesses on the front and back sides of the multilayer core substrate are increased, undulation occurs in the interlayer insulating layer formed thereon, so that impedance matching cannot be performed.
- the total thickness of the surface conductor layer and the inner conductor layer of the multilayer core substrate is the thickness of the core conductor layer. In this case, it is applied when the surface conductor layer and the inner conductor layer have an electrical connection, and there is an electrical connection at two or more places. If the area is approximately the same as a pad or land, the thickness of the conductor layer of that area is not the sum of the thicknesses.
- the conductor layer is preferably a power supply layer or an earth layer.
- a multilayer core substrate composed of three layers (a surface layer and an inner layer) may be used.
- a multilayer core substrate having three or more layers may be used.
- a multilayer core substrate containing electronic components formed by embedding components such as a capacitor, a dielectric layer, and a resistor in the inner layer of the multilayer core substrate may be used.
- the thickness of the inner conductor layer of the multilayer core substrate is increased, it is better to dispose the corresponding conductor layer immediately below the IC chip.
- the distance between the IC chip and the power supply layer can be minimized, and therefore the inductance can be further reduced.
- the third voltage drop is particularly eliminated.
- the sum of the thicknesses of the conductor layers of the multilayer core substrate is ⁇ 1, and the thickness of the conductor layer on the interlayer insulating layer is ⁇ 2, where 0; 2 ⁇ 0; 1 ⁇ 400; 2 Is desirable.
- the inner conductor layer of the multilayer core substrate is made thicker than the conductor layer on the interlayer insulating layer. As a result, even if a thin conductor layer is arranged on the surface of the multilayer core substrate, the inner conductor layer and the thick conductor layer can be combined. By doing so, it is possible to secure a sufficient thickness as the conductor layer of the core. In other words, even if a large-capacity power supply is supplied, it can be started without any problem, and does not cause malfunction or malfunction.
- the sum of the thicknesses of the conductor layers of the multilayer core substrate is ⁇ 1
- the thickness of the conductor layer on the interlayer insulating layer is ⁇ 2 , where 0; 2 ⁇ 0;1 ⁇ 400; 2 Is desirable.
- FIG. 28 shows a temporal change in the voltage of the IC from the moment when the power is turned on.
- the vertical axis shows the IC voltage
- the horizontal axis shows the passage of time.
- Fig. 28 is a model of a printed wiring board with a high-frequency IC chip of 1GHz or higher mounted and no capacitor for power supply.
- Line B shows the change over time of the voltage to the 1 GHz IC chip
- line A shows the change over time of the voltage to the 3 GHz IC chip.
- the change over time requires a large amount of power instantaneously when the IC chip starts to start. If the supply is insufficient, the voltage will drop (points X and X ': the first voltage drop).
- the voltage rises, falls again (the second voltage drop), rises, then falls (the third voltage drop), and thereafter the voltage gradually rises while repeating a small amplitude. .
- the IC chip may malfunction or cause errors. In other words, this is a malfunction that occurs because the function of the IC chip does not function sufficiently and does not start due to insufficient power supply.
- This power shortage increases as the frequency of the IC chip increases. Therefore, it takes time to eliminate the voltage drop, and a time lag occurs for performing a desired function and starting.
- FIG. 29 shows a temporal change of the voltage of the IC when a high-frequency chip is mounted on the printed wiring board having the conventional structure and the printed wiring board of the present invention. Since the IC voltage cannot be measured directly, a measurement circuit was formed on the printed wiring board so that it could be measured.
- the multilayer core of A (conventional structure) has 4 layers, all through holes have dummy lands, and the conductor thickness of each layer for power supply is the same and 15 m (the power supply layer of the core substrate is 2 m2). The conductor thickness on the layer and interlayer insulating layer is 30 m).
- the multilayer core of B has four layers as in A, but has a power layer of 30 ⁇ m on the surface and an inner layer of 30 ⁇ m, and the power supply through hole directly under the IC is grounded to the inner layer of the multilayer core.
- the layer does not have a conductor circuit that extends through the power supply through-hole force, and the ground through-hole directly below the IC has a conductor circuit that extends through the power supply through-hole force in the inner layer power supply layer of the multilayer core.
- C is B multilayer In this example, the conductor thickness of the inner layer is set to 75 / zm. In the conductor layer of the multilayer core, a power supply layer and a dull layer are alternately arranged.
- A, B, and C are multilayer printed wiring boards in which interlayer insulation layers and conductor layers are alternately built up on the multilayer core. From FIG. 29, it can be seen that the first and second voltage drops are improved by using the multilayer core structure having no conductor circuit extending from the through hole according to the present invention. Therefore, it can be said that the occurrence of defects in the functions and operations of the IC chip is reduced. It is also apparent that increasing the inner conductor thickness further improves the first and second voltage drops. When the thickness of the inner layer circuit was 40-150 ⁇ m, the result was similar to that of 75 ⁇ m.
- the thickness of the conductor layers of the power supply layers of all the layers of the multilayer core substrate is larger than the thickness of the conductor layer on the interlayer insulating layer, the thickness of all the layers of the multilayer core substrate is reduced. Even when the thickness of the conductor layer of the power supply layer is equal to or less than the thickness of the conductor layer on the interlayer insulation layer, the total force of the thickness of the conductors on all layers plus the thickness of the conductor layer on the interlayer insulation layer The effect is exhibited when the film becomes thicker.
- FIG. 8 is a cross-sectional view of the multilayer printed wiring board 10, and FIG. 9 shows a state where the IC chip 90 is mounted on the multilayer printed wiring board 10 shown in FIG.
- the multilayer printed wiring board 10 uses a multilayer core substrate 30.
- the conductor circuit 34 and the conductor layer 34P are formed on the front side of the multilayer core substrate 30, and the conductor circuit 34 and the conductor layer 34E are formed on the back side.
- the upper conductor layer 34P is formed as a power supply plane layer
- the lower conductor layer 34E is formed as a ground plane layer.
- the conductor circuit 16 and the conductor layer 16E of the inner layer are formed on the front side inside the multilayer core substrate 30, and the conductor circuit 16 and the conductor layer 16P are formed on the back side.
- the upper conductor layer 16E is formed as a ground plane layer
- the lower conductor layer 16P is formed as a power supply plane layer. Electric
- the connection to the source plane layer is made by through holes and via holes.
- the plane layer may be a single layer on only one side or a layer arranged on two or more layers. It is desirable that it be formed with two layers and four layers. It has been confirmed that the electrical characteristics are improved when the number of layers is 5 or more.
- the thickness of the core substrate is increased, and conversely, the electric characteristics may be deteriorated.
- the formation of the two layers makes it difficult for the multilayer core substrate to be warped because the elongation of the substrate is uniform in terms of rigidity matching.
- the electrically isolated metal plate 12 is accommodated in the center of the multilayer core substrate 30.
- the metal plate 12 also plays a role as a core material, but is not connected to any electrical connection such as a through hole or a via hole.
- 34, a conductor layer 34P, and a conductor circuit 34 and a conductor layer 34E are formed on the back surface.
- the multilayer core substrate 30 has a front side and a back side connected through a through hole 36. In addition, electrical connection with the inner layer has been established.
- a fat insulating layer 150 is provided.
- a solder resist layer 70 is formed on the upper layer of the via hole 160 and the conductor circuit 158, and bumps 76U and 76D are formed in the via hole 160 and the conductor circuit 158 through the opening 71 of the solder resist layer 70. .
- the solder bumps 76U on the upper surface side of the multilayer printed wiring board 10 are connected to the lands 92 of the IC chip 90. Further, a chip capacitor 98 is mounted.
- the lower external terminal 76D is connected to the land 96 of the daughter board 94.
- the external terminals refer to PGA, BGA, solder bumps, and the like.
- Bisphenol A-type epoxy resin (epoxy equivalent: 455, Yuka Shell Epoxy Co., Ltd. Coat 1001) 29 parts by weight, cresol novolak type epoxy resin (epoxy equivalent: 215, Epicon N-673 manufactured by Dainippon Ink and Chemicals, Inc.) 39 parts by weight, triazine structure-containing phenol novolak resin (phenolic hydroxyl equivalent: 120, 30 parts by weight of FENOLITE KA-7052 manufactured by Dainippon Ink and Chemicals, Inc.
- the obtained epoxy resin composition is applied on a 38 ⁇ m-thick PET film using a roll coater so that the thickness after drying becomes 50 ⁇ m, and then dried at 80-120 ° C for 10 minutes. By doing so, a resin film for an interlayer resin insulating layer was produced.
- Bisphenol F type epoxy monomer manufactured by Yuka Shell Co., Ltd., molecular weight: 310, YL983U 100 parts by weight, the average particle diameter of which is coated with a silane coupling agent on the surface is 1.
- the maximum particle diameter is 15 ⁇ m 170 parts by weight of the following Si02 spherical particles (CRS 1101-CE, manufactured by Adtec) and 5 parts by weight of a leveling agent (Perenol S4, manufactured by San Nopco) are placed in a container, and the viscosity is reduced to 23 by mixing with stirring.
- a resin filler of 44-49 Pa's at ⁇ 1 ° C was prepared.
- an imidazole curing agent 2E4MZ-CN, manufactured by Shikoku Chemicals Co., Ltd.
- a thermosetting resin such as another epoxy resin (for example, bisphenol A type, novolak type, etc.), a polyimide resin, or a phenol resin may be used.
- an opening 12a penetrating the front and back is provided (Fig. 1 (B)).
- a metal plate of 20 m was used.
- metals such as copper, nickel, zinc, aluminum, and iron are blended. Can be used.
- the thermal expansion coefficient of the core substrate can be made closer to the thermal expansion coefficient of the IC, so that thermal stress can be reduced.
- the opening 12a is formed by punching, etching, drilling, laser or the like.
- the metal film 13 may be covered by electrolytic plating, electroless plating, substitution plating, or sputtering over the entire surface of the metal layer 12 in which the opening 12a is formed (FIG. 1 (C)).
- the metal plate 12 may be a single layer or two or more layers. It is preferable that the metal film 13 has a curved surface at the corner of the opening 12a. As a result, there is no point where stress concentrates, and defects such as cracks around the point are unlikely to occur. Note that the metal plate 12 does not have to be built in the core substrate.
- Insulating resin is used to cover the entire metal layer 12 and fill the opening 12a.
- a B-stage resin film having a thickness of about 30 to 400 m is sandwiched between metal plates 12 (FIG. 1 (D)), and a copper foil of 12 to 275 m is further outside thereof.
- the insulating resin layer 14 and the conductor layer 16 can be formed by thermocompression bonding and curing (FIG. 1 (E)). Depending on the case, it may be formed by coating, mixing of coating and film pressing, or coating only the unopened area, and then forming a film.
- thermosetting resin such as a polyimide resin, an epoxy resin, a phenol resin, or a BT resin is impregnated into a core material such as a glass cloth or an aramide nonwoven fabric.
- a resin may be used.
- a 50 m prepreg was used.
- the conductor layer 16 may be formed by plating or the like on a metal foil.
- the metal layer may be formed by an additive method.
- the inner conductor layers 16, 16P, and 16E were formed from the inner metal layer 16 through a tenting method, an etching step, and the like (FIG. 1 (F)).
- the thickness of the inner conductor layer at this time was 10 to 250 m. However, it may exceed the above range.
- the thickness of the inner conductor layer for power supply is thick.
- a test pattern (a butter for evaluating insulation resistance of the core substrate) was used to evaluate the insulation reliability of the core substrate. As a result, a comb-tooth pattern for measuring insulation resistance with a conductor width of Z and a spacing between conductors of 150 ⁇ m / 150 ⁇ m was formed.
- the power supply through-hole electrically connected to the power supply of the IC penetrates the ground layer of the internal circuit, it is not necessary to have a wiring pattern for extending the power supply through-hole force.
- the ground through-hole electrically connected to the IC ground may not have a wiring pattern that extends through the ground through-hole force when penetrating the power supply layer of the inner layer circuit.
- Insulating resin is used to cover the entire inner conductor layers 16, 16P and 16E and to fill gaps between the circuits.
- a stage-like resin film having a thickness of about 30 to 200 ⁇ m and a metal foil having a thickness of 10 to 275 ⁇ m were laminated on both surfaces of the intermediate substrate formed up to (3).
- the substrate is thermo-compressed and then cured to form the outer insulating resin layer 18 of the core substrate and the outermost conductor layer 34 ⁇ of the core substrate (FIG. 2 (B)).
- it may be formed by coating, mixing of coating and film pressing, or coating only the opening, and then forming a film.
- the surface can be flattened by pressing.
- a stage pre-predator made of glass cloth or aramide non-woven fabric may be used.
- a 200 / zm-thick pre-preda was used.
- a single-sided copper-clad laminate is laminated. Two or more layers may be formed on a metal foil by plating or the like. The metal layer may be formed by an additive method.
- a through-hole 36a with an opening diameter of 50-400 ⁇ m is formed through the front and back of the board (Fig. 2 (C)).
- a forming method it is formed by a drill, a laser or a combination of a laser and a drill.
- the opening of the outermost insulating layer is made with a laser, and in some cases, the opening with the laser is used as a target mark. To open and penetrate). It is desirable that the shape be one having straight side walls. In some cases, it may be tapered.
- a plated film is formed in the through-hole 36a.
- a filling resin 23 (FIG. 2 (E)).
- Filled resin includes electrically insulated resin material (eg, containing resin components, hardeners, particles, etc.), and conductive particles that are electrically connected by metal particles. Any of materials (for example, those containing metal particles such as gold and copper, a resin material, a curing agent, and the like) can be used.
- the substrate was temporarily dried to remove excess filler resin adhered on the electrolytic copper plating film 22 on the substrate surface by polishing, and dried at 150 ° C. for 1 hour to be completely cured.
- electrolytic plating electroless plating, panel plating (electroless plating and electrolytic plating) and the like can be used.
- a metal it is formed by containing copper, nickel, conoret, phosphorus, and the like. It is desirable that the thickness of the plated metal is formed between 5 and 30 m.
- an insulating material which is also strong, such as a resin material, a hardener, and particles.
- a resin material such as silica and alumina, metal particles such as gold, silver and copper, resin particles and the like can be used alone or in combination. Particles with a particle size of 0.1-5 ⁇ m of the same diameter or a mixture of multiple diameters can be used.
- the resin materials include epoxy resins (for example, bisphenol-type epoxy resins, novolak-type epoxy resins, etc.), thermosetting resins such as phenol resins, UV-sensitive resins having photosensitivity, A single or mixed thermoplastic resin or the like can be used.
- an imidazole-based curing agent, an amine-based curing agent, or the like can be used.
- a curing stabilizer, a reaction stabilizer, particles and the like may be contained.
- a conductive material may be used.
- the conductive paste which is a conductive material, is a material that also has power, such as metal particles, a resin component, and a curing agent.
- a material in which a conductive metal film is formed on a surface layer of an insulating material such as solder or insulating resin may be used. It is also possible to fill the through holes 36 ⁇ with plating by plating. This is because the conductive paste undergoes curing shrinkage, which may result in the formation of recesses in the surface layer.
- a lid plating 25 is formed just above the through hole 36. (Fig. 3 (A)). Then, through a tenting method, an etching step, etc., the outer conductor circuits 34, 34P, 34E are formed (FIG. 3 (B)). Thus, the multilayer core substrate 30 is completed.
- the thickness of the power supply conductor layer on the surface of the multilayer core substrate is 15 m.
- the electric connection with the inner conductor layer 16 etc. of the multilayer core substrate may be made by via holes, blind through holes, and blind via holes as shown in FIG. ,.
- the multilayer core substrate 30 on which the conductor circuit 34 is formed is subjected to a blackening process and a reduction process to form a roughened surface 3418 on the entire surface of the conductor circuit 34 and the conductor layers 34P and 34E. (Fig. 3 (C)).
- a layer of the resin filler 40 is formed on the portion of the multilayer core substrate 30 where no conductive circuit is formed (FIG. 4 (A)).
- resin filling between the conductor circuits may not be performed.
- a resin layer such as an interlayer insulating layer is used to form an insulating layer and fill between conductive circuits.
- the multilayer core substrate 30 is sprayed with an etching solution by spraying on both surfaces of the substrate, and the conductor circuit 34, the surfaces of the conductor layers 34P and 34E, and the land surfaces of the through holes 36 are etched to form conductors.
- a roughened surface 36 ⁇ was formed on the entire surface of the circuit (Fig. 4 (C)).
- a resin film 50 ⁇ for an interlayer resin insulating layer is placed on both surfaces of the multilayer core substrate 30, temporarily cut and cut, and then bonded using a vacuum laminator device. By attaching, an interlayer resin insulation layer was formed (Fig. 5 ( ⁇ )).
- a via hole opening 50a with a diameter of 80—100 ⁇ m was formed in the interlayer resin insulation layer (Fig. 5 (B)).
- the substrate 30 is immersed in a solution containing 60 gZl of permanganate at 80 ° C. for 10 minutes, and the surface of the interlayer resin insulating layer 50 including the inner wall of the via hole opening 50 a is roughened. 50a was formed (Fig. 5 (C)). The roughened surface was formed between 0.1-5 / zm.
- the substrate 30 after the above treatment was immersed in a neutralizing solution (manufactured by Shipley Co., Ltd.) and then washed with water. Further, by applying a palladium catalyst to the surface of the substrate subjected to the surface roughening treatment (roughing depth: 3 m), catalyst nuclei adhere to the surface of the interlayer resin insulating layer and the inner wall surface of the via hole opening. Was.
- the substrate provided with the catalyst is immersed in an electroless copper plating aqueous solution to form a 0.6-3.0 m-thick electroless copper plating film on the entire rough surface. Then, a substrate is obtained in which the electroless copper plating film 52 is formed on the surface of the interlayer resin insulating layer 50 including the inner wall of the via hole opening 50a (FIG. 5 (D)).
- Polyethylene glycol 0.1 lOg / 1
- the substrate 30 is subjected to electrolytic plating, and the portion where the plating resist 54 is not formed has a thickness of 5—2 A 0 ⁇ m electrolytic copper plating film 56 was formed (FIG. 6 (B)).
- solder resist composition 70 is applied on both sides of the multilayer wiring board in a thickness of 12 to 30 m, and the conditions are set at 70 ° C. for 20 minutes and at 70 ° C. for 30 minutes. in after drying (FIG. 7 (B)), a solder resist pattern of openings is brought into close contact with the solder resist layer 70 a photo mask of 5mm thick drawn and exposed to ultraviolet rays of 1000 mj / cm 2, Development was performed with a DMTG solution to form an opening 71 having a diameter of 200 ⁇ m (FIG. 7 (C)).
- solder resist layer is further heated under the conditions of 1 hour at 80 ° C, 1 hour at 100 ° C, 1 hour at 120 ° C, and 3 hours at 150 ° C to cure the solder resist layer and to form an opening. Then, a solder resist pattern layer having a thickness of 10 to 25 ⁇ m was formed.
- the substrate on which the solder resist layer 70 was formed was immersed in an electroless nickel plating solution to form a nickel plating layer 72 having a thickness of 5 m in the opening 71. Furthermore, the substrate was immersed in an electroless plating solution to form a plating layer 74 having a thickness of 0.03 ⁇ m on the nickel plating layer 72 (FIG. 7 (D)).
- a single layer of tin or a noble metal layer gold, silver, palladium, platinum, etc. may be formed.
- solder paste containing tin ⁇ 0 is printed in the opening 71 of the solder resist layer 70 on the surface of the substrate on which the IC chip is to be mounted, and the solder resist layer on the other surface is printed.
- external terminals were formed by reflow at 200 ° C, and a multilayer printed wiring board with solder bumps was manufactured (Figure 8).
- the IC chip 90 is attached via the solder bump 76U, and the chip capacitor 98 is mounted.
- a first embodiment 1-2-a first embodiment 28 and a first comparative example 11-a first comparative example 3 were produced.
- the thickness of the conductor layer of the core substrate, the number of conductor layers of the core substrate, the number of through holes having no dummy land, the region having no dummy land, and the conductor on the interlayer insulating layer was changed.
- the thickness of the copper foil was changed in Fig. 1 (E).
- the thickness of the copper foil in Fig. 2 (B) and the plating thickness in Figs.
- the number of core layers, the thickness of the power supply conductor layer, the thickness of the conductor layer on the interlayer insulating layer, the number of through holes without dummy lands, the area thereof, and the like are shown below for each of the examples and comparative examples.
- Thickness of inner conductor layer for power supply on 4-layer core board 25 m
- the thickness of the power supply conductor layer on the surface of the 4-layer core board 15 m
- the sum of the thicknesses of the power supply conductor layers on the core board 40 m
- the thickness of the conductor layer on the interlayer insulating layer 20 / zm
- Thickness of inner power supply conductor layer of 4-layer core board 15 m
- Thickness of power supply conductor layer of 4-layer core board surface layer 9 m
- Thickness of power supply conductor layer in inner layer of 4-layer core board 45 m Thickness of power supply conductor layer on surface of 4-layer core board: 15 m Sum of thickness of power supply conductor layer of core board: 60 m On interlayer insulating layer Conductor layer thickness: 20 / zm
- Thickness of inner power supply conductor layer of 4-layer core board 60 m
- Thickness of power supply conductor layer on 4-layer core board surface layer 15 m
- Sum of thickness of power supply conductor layer of core board 75 m
- Above interlayer insulating layer Conductor layer thickness: 20 / zm
- Thickness of power supply conductor layer of each inner layer of 14-layer core board 100 ⁇ m Thickness of power supply conductor layer of 14-layer core board surface layer: 15 m Sum of thickness of power supply conductor layer of core board: 615 m Interlayer insulation Thickness of conductor layer on layer: 20 / zm
- Thickness of power supply conductor layer of each inner layer of 18-layer core board 100 ⁇ m Thickness of power supply conductor layer of 18-layer core board surface layer: 15 m Sum of thickness of power supply conductor layer of core board: 815 m Interlayer insulation Thickness of conductor layer on layer: 20 / zm [0086] (First Embodiment 7)
- Thickness of inner conductor layer for power supply of 4-layer core board 15 m
- Thickness of power supply conductor layer on 4-layer core board 45 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Thickness of inner conductor layer for power supply of 4-layer core board 15 m
- Thickness of power supply conductor layer on the surface of 4-layer core board 60 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Thickness of inner conductor layer for power supply of 4-layer core board 50 m
- Power supply conductor layer thickness on the surface of the 4-layer core board 15 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Thickness of inner power supply conductor layer of 4-layer core board 150 m
- Power supply conductor layer thickness on the surface of the 4-layer core board 15 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Thickness of inner conductor layer for power supply on 4-layer core board 175 ⁇ m
- Power supply conductor layer thickness on the surface of the 4-layer core board 15 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Thickness of inner power supply conductor layer of 4-layer core board 200 m
- Power supply conductor layer thickness on the surface of the 4-layer core board 15 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- a part of the power supply through-hole and the ground through-hole was a through-hole having no dummy land shown in the above (3) ⁇ Step of forming circuit of inner metal layer>.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is in all ground through holes. On the other hand, it was set to 50%.
- a part of the power supply through-hole and the ground through-hole was changed to the through-hole having no dummy land shown in the above (3) ⁇ Step of forming circuit of inner metal layer>.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is in all ground through holes. On the other hand, it was set to 50%.
- a part of the power supply through-hole and the ground through-hole is a through-hole having no dummy land shown in the above (3) ⁇ Process of forming inner metal layer circuit>.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is in all ground through holes. On the other hand, it was set to 50%.
- a part of the power supply through-hole and the ground through-hole was a through hole having no dummy land shown in the above (3) ⁇ Step of forming circuit of inner metal layer>.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is all ground through holes. To 50%.
- V and a part of the power supply through-hole and the ground through-hole are not provided with the dummy land shown in the above (3) Circuit forming step of inner metal layer>! ⁇ Sul One hole.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is all ground through holes. To 50%.
- V and all the power supply through holes and the ground One hole was a through hole without the dummy land shown in (3) ⁇ Step of forming circuit of inner metal layer>.
- Example-12 a part of the power supply through-hole and the ground through-hole was a through hole having no dummy land as described in the above (3) ⁇ Step of forming inner metal layer circuit>.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is all ground through holes. To 50%.
- Example 1-12 all the power supply through holes and the all ground through holes immediately below the IC do not have the dummy lands shown in (3) ⁇ Circuit formation process of inner metal layer> above. /, Through holes.
- all the power supply through holes and all the ground through holes immediately below the IC have the dummy lands shown in the above (3) ⁇ Circuit forming step of inner metal layer>. In addition, it was a through hole.
- Thickness of power supply conductor layer of each inner layer of 6-layer core board 32.5 m
- Thickness of power supply conductor layer on 6-layer core board 15 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Power supply conductor layer thickness on the surface of the 4-layer core board 15 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- a through hole having no dummy land shown in (3) ⁇ Step of forming circuit of inner metal layer> was used.
- the area is directly below the IC.
- the number of power supply through holes without dummy lands is 50% of all power supply through holes, and the number of ground through holes without dummy lands is all ground through holes. To 50%.
- the through holes for all power supply and the through holes for all ground immediately below the IC do not have the dummy lands shown in the above (3) ⁇ Process of forming inner metal layer>. /, Through holes.
- Thickness of inner conductor layer for power supply on 4-layer core board 10 ⁇ m
- Thickness of power supply conductor layer on 4-layer core board 10 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Thickness of power supply conductor layer of each inner layer of 18-layer core board 100 ⁇ m
- Power supply conductor layer thickness on the surface of the 18-layer core board 40 m
- Thickness of conductor layer on interlayer insulating layer 20 / z m
- Power supply conductor layer thickness of each inner layer of 22-layer core board 100 ⁇ m
- Thickness of power supply conductor layer on the surface of the 22-layer core board 15 m
- First Embodiment 1 11 First Embodiment 1 12, First Embodiment 27, 28 and First Comparative Example 1-First Comparative Example 3
- a multi-layer printed wiring board with a frequency of 3.1 GHz IC We mounted the chip, supplied the same amount of power, and measured the amount of voltage drop when starting up (the third drop of multiple voltage drops). Since the voltage of the IC cannot be directly measured in the IC, a measurable circuit was formed on the printed wiring board, and the voltage of the IC was measured. The values of the voltage drop at this time are shown in FIGS. Power supply voltage 1. The value of the fluctuating voltage drop at OV.
- the HAST test (85 ° C, humidity) was performed on the printed wiring boards of the first embodiment-1-the first embodiment-12, the first embodiment-28 and the first comparative example-1-the first comparative example-3. 85%, 3,3V mark).
- the pattern to be evaluated is a test pattern for insulation resistance evaluation formed on the core substrate.
- Figure 13 shows the results.
- the test time is 115 hours, and the pass is the insulation resistance value of 10 7 ⁇ or more after 115 hours.
- the evaluation of the minimum line spacing and line width forming ability evaluation pattern was performed during the production of the printed wiring board.
- the results are shown in FIG. 14 as forming ability.
- ⁇ indicates that there was no short circuit
- X indicates that there was a short circuit in the adjacent wiring.
- FIG. 13 and FIG. 15 show the results of the voltage drop amount and the insulation resistance after HAST for various ⁇ 2.
- the results after the HAST test were marked with "P” for pass and "X” for poor.
- FIG. 17 is a graph showing the voltage drop amounts for various ⁇ 1Z ⁇ 2.
- the thickness of the conductor layers on the front and back sides of the multilayer core substrate is smaller than the thickness of the inner conductor layer. Understand. This is because if a thick conductor layer is formed on the front and back surfaces, the effect of the interlayer agent will be affected by the influence, so that fine wiring cannot be formed on the interlayer insulation layer.
- the multilayer printed wiring board manufactured according to the first embodiment 11-12, 27, 28, and the first comparative example 11-3 has a malfunction in the mounted IC chip by the method described below. I checked if there was.
- the ratio of 0:17 0: 2 is in the range of 1.2-40. It can be seen that no malfunction is observed in the IC. This is presumed to be because power supply to the IC is instantaneous because the conductor resistance of the power supply layer is low. As a result of mounting the No. 2 IC chip, it can be seen that when the driving frequency of the IC becomes higher, it is necessary to supply power to the IC in a shorter time, so that there is a more suitable range. The reason why malfunctions occurred in the first and second embodiments 11 and 12 and the first and fifth embodiments where the number of inner layers is large is that the core substrate is thicker.
- the signal may deteriorate when transmitting through the signal through-hole (through-hole (not shown) electrically connected to the signal circuit of the IC).
- Signal through-hole force When penetrating the S4 layer core, the through-hole is formed by the upper insulating layer (the insulating layer between the surface power layer and the inner ground layer in Fig. 9), the ground layer, and the insulating layer (Fig. 9). 9 through the power supply layer and the insulation layer (the insulation layer between the inner power supply layer and the ground plane on the back in Fig. 9).
- the impedance of the signal wiring changes depending on the surrounding ground and the presence or absence of a power supply, for example, the impedance value differs at the interface between the insulating layer and the ground layer between the surface power supply layer and the ground layer. Therefore, signal reflection occurs at the interface. The same happens at other interfaces.
- the amount of change in the impedance increases as the distance between the signal through-hole and the ground layer and the power supply layer becomes shorter, the thickness of the ground layer and the power supply layer increases, and the number of interfaces increases.
- IC chip As an IC chip, one of the following IC chips selected from No. 1-3 was mounted on each multilayer printed wiring board, and simultaneous switching was performed 100 times to evaluate the presence or absence of malfunction.
- Figure 16 shows the results.
- TH in the figure is an abbreviation for through hole.
- First Example The printed wiring boards of 3, 4, 13, 14, 17, 18, and 28 were left for 100 hours in a high-temperature and high-humidity (85 ° C./85%) environment. After that, the above-mentioned No. 3 IC chip was mounted on each printed wiring board, and simultaneous switching was performed to check for malfunction. Except for the first embodiment-3, it did not malfunction. Since the resistance of the conductor layer was increased by the high-temperature / high-humidity test, it is presumed that malfunction occurred in the first embodiment-3. Similarly, in the other embodiments, the resistance is increased, but in contrast to the first embodiment-3, the other has a thicker conductor layer or a through hole without a dummy land.
- the thickness of the inner conductor layer is preferably 60 m to 125 mS. From the above, it can be inferred that in the case of a multilayer core, the conductor thickness of the inner layer and the through hole having no dummy land affect each other.
- FIGS. 18 to 25 a multilayer printed wiring board according to a second embodiment-1 of the present invention will be described. Will be explained.
- FIG. 22 is a cross-sectional view of the multilayer printed wiring board 10, and FIG. 23 shows a state in which an IC chip 90 is mounted on the multilayer printed wiring board 10 shown in FIG.
- the multilayer printed wiring board 10 uses a multilayer core substrate 30.
- a signal circuit 34S, a power supply circuit 34P, and a ground circuit 34E are formed on the front and back of the multilayer core substrate 30.
- an earth circuit 16E and a signal circuit 16S1 of the inner layer are formed on the front side inside the multilayer core substrate 30, and a power supply circuit 16P and a signal circuit 16S2 are formed on the back side.
- the upper ground circuit 16E is formed as a ground plane layer
- the lower power circuit 16P is formed as a power plane layer.
- the plane layer may be a single layer on only one side or a layer arranged on two or more layers. It is desirable to be formed with two layers and four layers. When the number of layers is more than four, the thickness of the core becomes thicker, and it is confirmed that the electrical characteristics are improved. Therefore, even if the number of layers is increased, the effect is about the same as that of four layers. On the contrary, it may worsen.
- the formation of two layers makes the through-hole length shorter and the rigidity matching of the multilayer core substrate the same, so that the elongation ratio of the substrate is uniform, so that warpage does not easily occur.
- the multi-layer core substrate 30 includes an inner layer through a signal through hole (not shown) electrically connected to an IC signal circuit, a ground circuit, and a power circuit, a ground through hole 36E, and a power through hole 36P. The connection between the front side and the back side is established.
- an interlayer insulating layer 50 having a via hole 60 and a conductor circuit 58 formed thereon, and a via hole 160 and a conductor circuit 158 formed thereon.
- An interlayer insulating layer 150 is provided.
- a solder resist layer 70 is formed on the upper layer of the via hole 160 and the conductor circuit 158, and bumps 76U and 76D are formed in the via hole 160 and the conductor circuit 158 via the opening 71 of the solder resist layer 70. ing.
- the solder bumps 76U on the upper surface side of the multilayer printed wiring board 10 are connected to the lands 92 of the IC chip 90. Further, a chip capacitor 98 is mounted.
- the lower external terminal 76D is connected to the land 96 of the daughter board 94. In this case, the external terminals refer to PGA, BGA, solder bumps, and the like.
- FIG. 25 (A) shows the X3-X3 cross section in FIG. 22, that is, the plane of the inner-layer ground plane layer 16E
- FIG. 25 (B) shows the X2-X2 cross section, ie, the inner layer.
- the plane of the power supply plane layer 16P is shown.
- FIG. 22 and FIGS. 25A and 25B do not have the same arrangement because FIG. 22 schematically shows the vertical structure of the multilayer printed wiring board.
- the power supply through-hole 36P when the power supply through-hole 36P penetrates the inner-layer ground plane layer 16E of the multilayer core, the power supply through-hole 36P
- the hole 36P does not have a conductor circuit such as a land extending from the through hole.
- the power supply through-hole 36P is disposed in a hole 35 provided in the ground plane layer 16E.
- the ground through hole 36E is the same as the ground through hole 36E that penetrates the power plane layer 16P, and the ground through hole 36E is the inner power plane layer 16P.
- the grounding through hole 36E is arranged in the hollow 35, and does not have a conductor circuit such as a land extending through the through hole.
- the power supply through-hole and the ground through-hole, the power supply through-hole and the ground plane between layers in the horizontal direction of the core, and the ground through-hole and the power supply in the core horizontal direction are provided. It is possible to reduce the interval between the use plane layers, and to reduce the mutual inductance. Further, since the through hole has no dummy land, it is possible to increase the conductor area of the power supply plane layer and the ground plane layer. This makes it possible to reduce the first and second voltage drops described above with reference to FIG. 28 and FIG. 29, making power supply shortage unlikely to occur, and mounting an IC chip in a higher frequency range. Does not cause malfunction or error in the initial startup.
- the through-hole force of the multilayer core substrate is configured such that through-holes 36P for power supply and through-holes 36E for ground are alternately arranged. Such an alternate arrangement thus, the mutual inductance is reduced, and the first and second voltage drops can be reduced.
- FIGS. 31 (A) and 31 (B) it is not always necessary to arrange them alternately.
- Some power supply through holes and ground through holes may be adjacent to each other.
- the power supply through holes 36P and 36P When the power supply through holes 36P and 36P are adjacent as shown in Fig. 31 (A), they may be connected by the power supply circuit 16P1 in the ground plane layer 16E, or they may be disconnected without being connected.
- a through hole 36P may be formed in 35. The same applies to the case where the ground through holes 36E are adjacent to each other as shown in FIG. 31 (B). It is preferable to form the hollow 35 because the conductor volume of the plane layer increases.
- the conductor circuit extending in the power supply plane layer 16P and the ground plane layer 16E has a single-hole force. It is not necessary to provide a circuit, but the circuit may be formed on any plane layer as long as there is a space for forming the circuit. Arranging signal circuits in the core is advantageous for finer wiring when wiring in the build-up layer.
- the conductor thickness of the multilayer core substrate 30 is preferably such that the conductor thickness of the inner layer is not less than the conductor thickness of the surface layer.
- Multilayer core board 30 Surface power circuit 34P, ground circuit 34E, signal circuit 34S is formed with a thickness of 10-60 / zm, and inner layer power circuit 16P, ground circuit 16E, signal circuit 16S1, 16S2 have thickness 10 —
- the conductor circuit 58 on the interlayer insulating layer 50 and the conductor circuit 158 on the interlayer insulating layer 150 are formed to have a length of 5 to 25 m.
- the thickness of the conductor circuit in the inner layer of the multilayer core board is more preferably twice or more the thickness of the conductor circuit on the front and back sides of the multilayer core board.
- the power supply layer (conductor layer) 34P, the ground circuit 34E, the signal circuit 34S, the power supply circuit 16P of the inner layer, and the ground circuit 16E of the multilayer core substrate 30 need to be thickened. Thereby, the strength of the multilayer core substrate is increased. As a result, even if the multilayer core substrate itself is thinned, the warpage and the generated stress can be reduced by the substrate itself.
- the volume of the conductor itself can be increased.
- the resistance of the conductor can be reduced.
- the power supply circuits 34P and 16P as a power supply layer, the ability to supply power to the IC chip 90 can be improved. Therefore, when the IC chip is mounted on the multilayer printed circuit board, the inductance from the IC chip to the substrate to the power supply can be reduced.
- the third voltage drop in the initial operation is reduced, and power shortage is unlikely to occur.Therefore, even if an IC chip in a high frequency region is mounted, no malfunction or error will occur in the initial startup. . Further, by using the ground circuits 34E and 16E as ground layers, noise is not superimposed on the signal and power supply of the IC chip, and malfunctions and errors can be prevented.
- the power stored in the capacitor can be used as an auxiliary power source, causing a power shortage.
- the effect becomes remarkable. The reason is that if it is directly below the IC chip, the wiring length on the multilayer printed wiring board can be shortened.
- the multilayer core substrate 30 has a thick power supply circuit 16P and an earth circuit 16E on the inner layer and a thin power circuit 34P and the earth circuit 34E on the surface, and the inner layer power circuit 16P and the The ground circuit 16E, the power circuit 34P on the surface, and the ground circuit 34E are used as a conductor layer for the power layer and a conductor layer for the ground. That is, even if the thick power supply circuit 16P and the earth circuit 16E are arranged on the inner layer side, the insulating layer covering the conductor circuit is formed. Therefore, the surface of the multilayer core substrate 30 can be made flat by offsetting the unevenness due to the conductive circuit.
- the internal power supply circuit 16P With the thickness added to the ground circuit 16E, a sufficient thickness can be secured as the conductor layer of the core. Since no undulation occurs, no problem occurs in the impedance of the conductor layer on the interlayer insulating layer.
- the power supply circuits 16P and 34P as conductor layers for the power supply layer and the ground circuits 16E and 34E as conductor layers for grounding, it becomes possible to improve the electrical characteristics of the multilayer printed wiring board. Further, as shown in FIG. 34, the opposing area (opposing distance) between the through hole having the opposite potential and the inner conductor layer increases, so that the electric characteristics can be further improved.
- the thickness of the power supply circuit 16P and the ground circuit 16E in the inner layer of the multilayer core substrate is changed by interlayer insulation. Thicker than conductor circuits 58, 158 on layers 50, 150. As a result, even when the thin earth circuit 34E and the power circuit 34P are arranged on the surface of the multilayer core substrate 30, a sufficient thickness is secured as the conductor layer of the core by adding the thick inner power circuit 16P and the earth circuit 16E. it can.
- the ratio is desirably 1 (the thickness of the conductor circuit in the inner layer of the core and the thickness of the conductor circuit in the interlayer insulating layer) ⁇ 40. It is more desirable that 1.2 ⁇ (thickness of conductor circuit in inner layer of core Z thickness of conductor circuit in interlayer insulating layer) ⁇ 30.
- a microstrip structure can be formed.
- a microstrip structure can be formed by arranging a signal line (not shown, in the same layer as the power supply circuit 16P) between the ground circuit 16E and the ground circuit 34E.
- FIG. 24 shows a modification of the second embodiment-1.
- a capacitor 98 is disposed immediately below an IC chip 90. Therefore, the distance between the IC chip 90 and the capacitor 98 is short, and a voltage drop of the power supply supplied to the IC chip 90 can be prevented.
- Insulating substrate 14 made of 0.6 mm thick glass epoxy resin or BT (bismaleimide triazine) resin 10-250 m copper foil 16 laminated on both sides of copper-clad laminate 10 was used as a starting material (FIG. 18 (A)). In the second embodiment-1, 30 / zm copper foil was used.
- FIG. 19B shows a conductor circuit 16P having no dummy land
- a conductor circuit 16P having no dummy land was formed in the punch 35.
- Figure 38 shows a conventional example for reference.
- the conventional example there is a circuit 16DD serving as a dummy land 16D in all the holes 35, and a through hole 36 is formed in the circuit 16DD.
- Through Ho A hole (opening) 35 is formed at the position where the hole is formed.
- the circuit 16DD which becomes the dummy land 16D, is formed with a diameter of 150 to 250 ⁇ m with respect to the diameter of the through hole.
- the distance between the through-holes, between the power supply through-hole and the ground conductor layer (X in FIG. 34), and between the ground through-hole and the power supply conductor layer can be reduced.
- the area where the power supply layer and the earth layer can be formed increases.
- the substrate was treated with NaOH (10 gZD, NaCIO (40 g / l), Na ⁇ (6 g / l)
- a rough surface 16 ⁇ is formed on the surfaces of Sl, 16P, and 16S2 (FIG. 18C).
- a 200 m thick pre-preder 18 and a 18 m thick copper foil 20 are laminated in this order on both sides of the above substrate, and then heated and pressed to form a four-layer multilayer core substrate 30. (Fig. 18 (D)).
- the thickness of the pre-preda is changed according to the thickness of the copper foil 16.
- This multilayer core substrate 30 is drilled to form a through hole 36 (FIG. 20).
- the substrate on which 36E was formed was treated with NaOH (lOgZD, NaCIO (40g / l), Na PO (6g / l).
- a reduction treatment using an aqueous solution containing (6 g / l) as a reduction bath is performed to form a roughened surface 34 ⁇ on the surfaces of the upper conductor circuit and the through hole (FIG. 20 (C)).
- the resin composition 40 for filling through-holes prepared in the same manner as in the first embodiment 1 described above was placed between the conductor circuits 34S, 34P, and 34E and inside the snoring holes 36S, 36P, 36E. After filling with a squeegee, drying was performed at 100 ° C. for 20 minutes (FIG. 21 (A)). Polish the surface of the substrate 30 until the surface of the conductor circuit and the land surface of the through hole are exposed. By heating at 100 ° C for 1 hour and at 150 ° C for 1 hour, a resin filler layer was formed by curing the resin composition 40 for filling through holes. 36S (not shown), 36P and 36E (Fig. 21 (B)).
- the copper thickness on the front and back surfaces of the multilayer core substrate was 7.5 to 70 m. Thus, it is preferable that the copper thickness on the front and back surfaces of the multilayer core substrate is smaller than the copper thickness of the inner layer. In the second embodiment 1, the thickness was set to 25 ⁇ m.
- the front and back layers can form a finer circuit than the inner layer, and can reduce the diameter of the through hole land and the gap between the conductor circuits and between the through hole land and the conductor circuit. Therefore, through-hole lands and conductor circuits on the front and back layers do not hinder narrowing of the through-hole pitch.
- the thickness of the conductor circuits 58 and 158 was adjusted to 15 m by adjusting the plating time.
- the area where the through-hole without the conductor circuit extending through-hole exists is located directly below the IC.
- the following changes are made. The other parts are the same as in the second embodiment-1.
- FIG. 26 (A) shows a cross section of a typical ground layer of the inner layer of the four-layer core, and (B) shows a cross section of a representative power layer of the inner layer of the four-layer core.
- the multilayer core of the second embodiment is also a four-layer core, and when the power supply through-hole 36P penetrates through the ground layer 16E, the through-hole also extends without the conductor circuit 16D. Is 50% of all through-holes connected to the power supply circuit of the IC, and the through-hole 36E for grounding With no conductor circuit extending from the IC, the through hole for grounding accounts for 50% of all through holes connected to the ground circuit of the IC. Adjustment of the number of through-holes without dummy lands can be achieved by changing the pattern of the exposure film when forming a circuit on the copper foil 16 in the process (2) described above with reference to FIG. It is possible.
- the second embodiment 3 is the same as the second embodiment-2, except that the through-hole force is not extended and the conductor circuit is extended to 70% in the second embodiment-2.
- the second embodiment 4 is the same as the second embodiment-2, except that the through-hole force is not extended, and the through-hole is 80%.
- the second embodiment 5 is the same as the second embodiment-2, except that the through-hole force is not extended and the conductor circuit is extended to 90% in the second embodiment-2.
- the conductor thickness of the inner power supply layer and the ground layer in the second embodiment 1 is changed to 45 m. Otherwise, it is the same as the second embodiment 1.
- the conductor thickness of the inner power supply layer and the ground layer in the second embodiment 1 is changed to 60 / zm. Otherwise, it is the same as the second embodiment 1.
- the conductor thickness of the inner power supply layer and the ground layer in the second embodiment 1 is changed to 75 / zm. Otherwise, it is the same as the second embodiment 1.
- the conductor thickness of the inner power supply layer and the ground layer in the second embodiment is changed to 75 / zm. Other than that, it is the same as the second embodiment-3.
- FIG. 10 A multilayer printed wiring board according to a second embodiment 10 of the present invention will be described with reference to FIG.
- the multilayer core substrate 30 in which the two-layer ground circuits 16E and 16P are arranged in the inner layer was used.
- the multi-layer core substrate 20 provided with the four-layer inner ground circuits 16E, 116E, 16P, and 116PP is used. Ground circuits and power supply circuits are arranged alternately.
- Example 2 In Example 19, the thickness of the starting material and the thickness of the conductor layers on the front and back of the core substrate were changed. Specifically, the thickness of the copper-clad laminate 10 in FIG. 18 (A) was 0.2 mm, and the thickness of the conductor layers (34S, 34P, 34E) on the front and back of the core substrate in FIG. 20 (B) was 10 m. . Subsequent steps were the same as in Example 11 of the second embodiment.
- the second embodiment 20 is different from the second embodiment 16 in that the number of power supply through-holes having no dummy land directly under the IC is 30% of the total number of through-holes for the power supply, The number of grounding through holes without lands was 30% of the total number of grounding throughholes.
- the conductor thickness of the inner power supply layer and the ground layer of the multilayer core substrate in the second embodiment-20 is set to 60 ⁇ m.
- the conductor thickness of the inner power supply layer and the ground layer of the multilayer core substrate in the second embodiment-20 is set to 75 ⁇ m.
- the conductor thicknesses of the inner power supply layer and the ground layer of the multilayer core substrate in the second embodiment-20 are set to 150 ⁇ m.
- the thickness of the pre-preda in FIG. 18 (D) was 275 ⁇ m.
- the conductor thickness of the power supply layer and the ground layer in the inner layer of the multilayer core substrate in the second embodiment-20 is set to 300 ⁇ m.
- the thickness of the pre-preda in FIG. 18 (D) was 450 ⁇ m.
- the second embodiment 25 is different from the second embodiment-20 in that the number of power supply through holes having no dummy land directly under the IC is 50% of the total number of through holes for the power supply, The number of through holes for ground without lands was 50% of the total number of through holes for ground.
- the second embodiment 26 is different from the second embodiment 21 in that the number of power supply through-holes having no dummy land directly under the IC is 50% of the total number of power supply through-holes and the dummy The number of through holes for ground without lands was 50% of the total number of through holes for ground.
- the second embodiment 27 is different from the second embodiment-22 in that the number of power supply through-holes having no dummy land directly under the IC is set to 50% of the total number of through holes for the power supply, The number of through holes for ground without lands was 50% of the total number of through holes for ground.
- the second embodiment-28 is different from the second embodiment-23 in that the number of power supply through-holes having no dummy land directly under the IC is 50% of the total number of power supply through-holes, The number of through holes for ground without dummy land was set to 50% of the total number of through holes for ground.
- the second embodiment—29 is different from the second embodiment—24 in that the number of power supply through-holes having no dummy land directly under the IC is 50% of the total number of power supply through-holes, and The number of through holes for ground without dummy land was set to 50% of the total number of through holes for ground.
- the second embodiment 30 is different from the second embodiment-20 in that the number of power supply through-holes having no dummy land directly under the IC is 70% of the total number of power supply through-holes, and The number of through holes for ground without the lower dummy land was set to 70% of the total number of through holes for ground.
- the second embodiment 31 is different from the second embodiment-21 in that the number of power supply through-holes having no dummy land directly under the IC is 70% of the total number of through holes for the power supply, The number of through holes for ground without lands was 70% of the total number of through holes for ground.
- the second embodiment 32 is different from the second embodiment-22 in that the number of power supply through-holes having no dummy land directly under the IC is set to 70% of the total number of power supply through-holes and the dummy The number of through holes for ground without lands was 70% of the total number of through holes for ground.
- the second embodiment 33 is different from the second embodiment 23 in that the number of power supply through-holes having no dummy land directly under the IC is set to 70% of the total number of through holes for the power supply and the dummy Number of through holes for ground without lands is 70 for all through holes for ground. / 0 .
- the second embodiment 34 is different from the second embodiment 24 in that the number of power supply through-holes having no dummy land directly under the IC is set to 70% of the total number of power supply through-holes and the dummy The number of through holes for ground without lands was 70% of the total number of through holes for ground.
- the second embodiment 35 is different from the second embodiment-12 in that the conductor thicknesses of the inner power supply layer and the ground layer of the multilayer core substrate are set to 60 ⁇ m.
- the conductor thickness of the power supply layer and the ground layer in the inner layer of the multilayer core substrate in the second embodiment-25 was set to 30 ⁇ m.
- the number of through holes without a dummy land immediately below the IC was reduced by 10—15% from the percentage shown in FIG. 30 and FIG. It is a number.
- a multilayer core substrate was formed so as to have an inner conductor layer and a surface conductor layer having the same thickness as in the second embodiment 1.
- the dummy lands 16 were arranged in all the through holes in the same manner as in the related art described above with reference to FIGS.
- the second comparative example 1 was the same as the second comparative example-1 except that the conductor thickness of the multilayer core substrate was changed to 15 m.
- the thickness of the starting material was changed. Specifically, the thickness of the copper-clad laminate 10 of FIG. 18A was set to 0.2 mm. In FIG. 18A, the thickness of the copper foil 16 was set to 5 ⁇ m.
- the first and second voltage drops are improved by increasing the number of through holes that do not have a conductor circuit that extends. I understand. And, when it becomes 70% or more, malfunction of the IC does not occur. If the number of through-holes having no conductor circuit extending therethrough is set to 70% or more, the effect of the improvement is diminished.
- the above test results show that the configuration of the present invention reduces the degree of power shortage (voltage drop) that occurs during the initial startup of the IC chip. I realized that even if implemented, it could be started without any problems. Therefore, electrical characteristics and electrical connectivity can also be improved. Further, the resistance in the circuit of the printed circuit board can be reduced as compared with the conventional printed circuit board. Therefore, even if a noise is added and a reliability test (high-temperature high-humidity bias test) performed under high temperature and high humidity is performed, the time required for destruction becomes long, and the reliability can be improved.
- a reliability test high-temperature high-humidity bias test
- the voltage drop amount of the IC chip was measured by the method described below. Simultaneous switching was performed on each multilayer printed wiring board on which the No. 3 IC chip was mounted, and the voltage drop amount of the IC chip at that time was measured. Since the voltage of the IC chip cannot be measured directly, a circuit capable of measuring the voltage of the IC is formed on the printed wiring board. Power supply voltage 1. The value of the amount of voltage drop that fluctuates when OV.
- the multilayer printed wiring manufactured according to the second embodiment 11-36 and the second comparative example-3 was checked for malfunctions in the mounted IC chip by the method described below.
- the area where the through hole is formed without the dummy land is preferably directly below the IC! Help.
- the conductor thickness of the inner ground layer is the same as the conductor thickness of the inner power supply layer, and the conductor thickness of the ground layer on the back surface of the core substrate is the same as the conductor thickness of the power supply layer on the front surface. For this reason, since the sum of the conductor thicknesses of the ground layers is as thick as that of the power supply layers, noise can be reduced and malfunctions are less likely to occur.
- the thickness of the conductor layer of the multilayer core and the number of through holes without dummy lands are the same. Even so
- FIG. 1 is a process diagram illustrating a method for manufacturing the multilayer printed wiring board according to the first embodiment 1 of the present invention.
- 2) is a process diagram illustrating a method for manufacturing the multilayer printed wiring board according to the first embodiment 1.
- ⁇ 3 ⁇ is a view showing the step of the method for producing the multilayer printed wiring board of the first embodiment 1.
- ⁇ 4 is a view showing the step of the method for producing the multilayer printed wiring board of the first embodiment 1.
- FIG. 5 is a process chart showing a method for manufacturing the multilayer printed wiring board of the first embodiment 1.
- FIG. 6 is a process drawing showing the method for manufacturing the multilayer printed wiring board of the first embodiment 1.
- FIG. 7 is a process chart showing a method for manufacturing the multilayer printed wiring board of the first embodiment 1.
- FIG. 8 is a cross-sectional view of the multilayer printed wiring board according to the first embodiment.
- FIG. 9 is a cross-sectional view showing a state where an IC chip is mounted on the multilayer printed wiring board according to the first embodiment-1.
- FIG. 10 is a graph showing a voltage change during the operation of the IC chip.
- FIG. 11 is a graph showing a voltage change during the operation of the IC chip.
- FIG. 12 is a graph showing a voltage change during the operation of the IC chip.
- FIG. 13 is a table showing test results of the first example and the first comparative example.
- Fig. 14 is a chart showing evaluation results of a minimum line gap and line width forming ability evaluation pattern of the first example.
- FIG. 15 is a table showing test results of the first example and the first comparative example.
- FIG. 16 is a table showing test results of the first example.
- FIG. 17 is a graph of a voltage drop amount with respect to a l / a 2.
- a process diagram showing a method for manufacturing a multilayer printed wiring board according to the second embodiment-1 of the present invention A process diagram showing a method for manufacturing the multilayer printed wiring board according to the second embodiment-1.
- FIG. 20 is a process drawing illustrating the method for manufacturing the multilayer printed wiring board of the second embodiment-1.
- FIG. 21 is a process drawing illustrating the method for manufacturing the multilayer printed wiring board of the second embodiment-1.
- FIG. 22 is a cross-sectional view of the multilayer printed wiring board according to the second embodiment.
- FIG. 23 A cross-section showing a state in which an IC chip is mounted on the multilayer printed wiring board according to the second embodiment-1 FIG.
- FIG. 24 is a cross-sectional view showing a state in which an IC chip is mounted on a multilayer printed wiring board according to a modification of the second embodiment 1.
- FIG. 25 (A) is a plan view of the inner power supply plane layer 16P in FIG. 22, and FIG. 25 (B) is a plan view of the inner ground plane layer 16E.
- FIG. 26 (A) is a plan view of the inner power supply plane layer 16P in FIG. 22, and FIG.
- (B) is a plan view of the inner-layer ground plane layer 16E.
- FIG. 27 is a sectional view of a multilayer printed wiring board according to Example 10-10.
- FIG. 28 is a graph showing a voltage change during the operation of the IC chip.
- FIG. 29 is a graph showing a voltage change during the operation of the IC chip.
- FIG. 30 is a table showing test results of the second example and the second comparative example.
- FIG. 31 (A) is a plan view of another example of the power supply plane layer 16P of the inner layer in FIG. 22.
- FIG. 25 (B) is a plan view of the inner ground plane layer 16E.
- V 7 is a graph showing V, the number of through holes, and a vertical axis showing a value (V) of a voltage drop amount.
- FIG. 33 is a chart showing the relationship between the conductor thickness of the inner layer and the first to third voltage drops.
- FIG. 34 is an explanatory diagram showing a relationship between a through hole and a conductor layer.
- FIG. 35 is a cross-sectional view of a multilayer printed wiring board according to the related art of the present invention.
- FIG. 36 is a cross-sectional view of the multilayer printed wiring board taken along line X4-X4 in FIG. 35, and FIG. 36 (B) is a cross-sectional view taken along line X5-X5.
- FIG. 37 (A) is a plan view of an inner power plane layer 16P
- FIG. 37 (B) is a plan view of an inner ground plane layer 16E.
- FIG. 38 is a cross-sectional view of a conventional multilayer printed wiring board.
- FIG. 39 is a schematic view of a signal through hole penetrating a multilayer core.
- FIG. 40 is a graph showing the first and second voltage drops.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Structure Of Printed Boards (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005517730A JP4722706B2 (ja) | 2004-02-04 | 2005-02-03 | 多層プリント配線板 |
KR1020087023063A KR101088338B1 (ko) | 2004-02-04 | 2005-02-03 | 다층프린트배선판 |
EP05709703A EP1713313A4 (en) | 2004-02-04 | 2005-02-03 | MULTILAYER PRINTED BOARD |
KR1020107014051A KR101137749B1 (ko) | 2004-02-04 | 2005-02-03 | 다층프린트배선판 |
US10/565,078 US7800216B2 (en) | 2004-02-04 | 2005-02-03 | Multilayer printed wiring board |
CN200580000214.8A CN1771771B (zh) | 2004-02-04 | 2005-02-03 | 多层印刷电路板 |
US12/869,841 US8569880B2 (en) | 2004-02-04 | 2010-08-27 | Multilayer printed wiring board |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-028073 | 2004-02-04 | ||
JP2004028073 | 2004-02-04 | ||
JP2004-029201 | 2004-02-05 | ||
JP2004029201 | 2004-02-05 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/565,078 A-371-Of-International US7800216B2 (en) | 2004-02-04 | 2005-02-03 | Multilayer printed wiring board |
US12/869,841 Division US8569880B2 (en) | 2004-02-04 | 2010-08-27 | Multilayer printed wiring board |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005076682A1 true WO2005076682A1 (ja) | 2005-08-18 |
Family
ID=34840141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/001610 WO2005076682A1 (ja) | 2004-02-04 | 2005-02-03 | 多層プリント配線板 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7800216B2 (ko) |
EP (1) | EP1713313A4 (ko) |
JP (2) | JP4722706B2 (ko) |
KR (5) | KR20080088670A (ko) |
CN (3) | CN1771771B (ko) |
TW (2) | TW201106828A (ko) |
WO (1) | WO2005076682A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008081881A1 (ja) * | 2006-12-28 | 2008-07-10 | Ntt Docomo, Inc. | 送信機、受信機、移動局、無線基地局、移動通信システム及び移動通信方法 |
WO2014024754A1 (ja) * | 2012-08-07 | 2014-02-13 | 三菱瓦斯化学株式会社 | 半導体パッケージ用回路基板及びその製造方法 |
JP2020074434A (ja) * | 2020-01-16 | 2020-05-14 | 株式会社ニコン | 基板、撮像ユニットおよび撮像装置 |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1744606A3 (en) * | 1999-09-02 | 2007-04-11 | Ibiden Co., Ltd. | Printed circuit board and method for producing the printed circuit board |
EP2081419B1 (en) * | 1999-09-02 | 2013-08-07 | Ibiden Co., Ltd. | Printed circuit board and method of manufacturing printed circuit board |
JP4488684B2 (ja) | 2002-08-09 | 2010-06-23 | イビデン株式会社 | 多層プリント配線板 |
WO2005076683A1 (ja) | 2004-02-04 | 2005-08-18 | Ibiden Co., Ltd. | 多層プリント配線板 |
JP4770514B2 (ja) * | 2006-02-27 | 2011-09-14 | 株式会社デンソー | 電子装置 |
JP2008016630A (ja) * | 2006-07-06 | 2008-01-24 | Matsushita Electric Ind Co Ltd | プリント配線板およびその製造方法 |
US7450396B2 (en) * | 2006-09-28 | 2008-11-11 | Intel Corporation | Skew compensation by changing ground parasitic for traces |
WO2008093757A1 (ja) * | 2007-01-31 | 2008-08-07 | Kyocera Corporation | プリプレグシートの製造方法および製造装置ならびにプリプレグシート |
US8072732B2 (en) * | 2007-04-10 | 2011-12-06 | Ngk Spark Plug Co., Ltd. | Capacitor and wiring board including the capacitor |
US8440916B2 (en) * | 2007-06-28 | 2013-05-14 | Intel Corporation | Method of forming a substrate core structure using microvia laser drilling and conductive layer pre-patterning and substrate core structure formed according to the method |
JP5085266B2 (ja) * | 2007-10-12 | 2012-11-28 | 富士通株式会社 | 配線基板およびその製造方法 |
JP5284155B2 (ja) * | 2008-03-24 | 2013-09-11 | 日本特殊陶業株式会社 | 部品内蔵配線基板 |
US8186053B2 (en) * | 2008-11-14 | 2012-05-29 | Fujitsu Limited | Circuit board and method of manufacturing the same |
KR101018109B1 (ko) * | 2009-08-24 | 2011-02-25 | 삼성전기주식회사 | 다층 배선 기판 및 그의 제조방법 |
KR101089959B1 (ko) | 2009-09-15 | 2011-12-05 | 삼성전기주식회사 | 인쇄회로기판 및 그의 제조 방법 |
CN102783258B (zh) * | 2010-02-26 | 2016-08-03 | 三菱电机株式会社 | 印刷线路板的制造方法以及印刷线路板 |
TW201217809A (en) * | 2010-10-27 | 2012-05-01 | Hon Hai Prec Ind Co Ltd | Memory load adapter board |
KR101107589B1 (ko) * | 2011-09-16 | 2012-01-25 | 안치욱 | 두께동 밀착력이 강화된 다층 인쇄회로기판 및 그 제조방법 |
WO2013110179A1 (en) * | 2012-01-27 | 2013-08-01 | Mosaid Technologies Incorporated | Method and apparatus for connecting memory dies to form a memory system |
US8987602B2 (en) * | 2012-06-14 | 2015-03-24 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. | Multilayer electronic support structure with cofabricated metal core |
CN103517583B (zh) * | 2012-06-27 | 2016-09-28 | 富葵精密组件(深圳)有限公司 | 多层电路板及其制作方法 |
JP2014086651A (ja) * | 2012-10-26 | 2014-05-12 | Ibiden Co Ltd | プリント配線板及びプリント配線板の製造方法 |
US20140115886A1 (en) * | 2012-10-26 | 2014-05-01 | Volex Plc | Method and system for marking substrate and placing components for high accuracy |
JP2014093332A (ja) * | 2012-10-31 | 2014-05-19 | Ibiden Co Ltd | プリント配線板及びその製造方法 |
KR101420520B1 (ko) * | 2012-11-07 | 2014-07-17 | 삼성전기주식회사 | 인쇄회로기판 및 이의 제조방법 |
US20140262440A1 (en) * | 2013-03-14 | 2014-09-18 | Xilinx, Inc. | Multi-layer core organic package substrate |
CN104806987B (zh) | 2014-01-28 | 2018-09-18 | 台达电子企业管理(上海)有限公司 | 电源装置及其组装方法 |
JP2015213124A (ja) * | 2014-05-02 | 2015-11-26 | イビデン株式会社 | パッケージ基板 |
WO2015186712A1 (ja) * | 2014-06-03 | 2015-12-10 | 三菱瓦斯化学株式会社 | 微細ビアホール形成のためのプリント配線板用樹脂積層体、並びに、樹脂絶縁層に微細ビアホールを有する多層プリント配線板及びその製造方法 |
KR101605172B1 (ko) * | 2015-04-07 | 2016-03-22 | 삼성전자주식회사 | 패키지 기판 및 그 제조방법 |
JP2018085384A (ja) * | 2016-11-21 | 2018-05-31 | オムロン株式会社 | 電子装置およびその製造方法 |
KR102542594B1 (ko) * | 2016-12-16 | 2023-06-14 | 삼성전자 주식회사 | 다층 인쇄 회로 기판 및 이를 포함하는 전자 장치 |
US10157832B2 (en) * | 2017-03-08 | 2018-12-18 | Globalfoundries Inc. | Integrated circuit structure including via interconnect structure abutting lateral ends of metal lines and methods of forming same |
WO2018221273A1 (ja) * | 2017-06-02 | 2018-12-06 | 株式会社村田製作所 | 高周波モジュール及び通信装置 |
AT520105B1 (de) * | 2017-06-16 | 2019-10-15 | Zkw Group Gmbh | Leiterplatte |
JP2019062092A (ja) * | 2017-09-27 | 2019-04-18 | イビデン株式会社 | プリント配線板 |
KR20190041215A (ko) * | 2017-10-12 | 2019-04-22 | 주식회사 아모그린텍 | 인쇄회로기판 제조 방법 및 이에 의해 제조된 인쇄회로기판 |
JP6867268B2 (ja) * | 2017-10-13 | 2021-04-28 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN111123065B (zh) * | 2018-10-30 | 2022-05-10 | 浙江宇视科技有限公司 | 印刷电路板布线检视方法及装置 |
JP7055109B2 (ja) * | 2019-01-17 | 2022-04-15 | 三菱電機株式会社 | 半導体装置 |
CN110398680B (zh) * | 2019-08-14 | 2021-07-20 | 华芯电子(天津)有限责任公司 | 一种pcb可靠性测试方法 |
CN113545170A (zh) * | 2019-10-31 | 2021-10-22 | 鹏鼎控股(深圳)股份有限公司 | 薄型电路板及其制造方法 |
US11948918B2 (en) * | 2020-06-15 | 2024-04-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Redistribution structure for semiconductor device and method of forming same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002064272A (ja) * | 2000-08-16 | 2002-02-28 | Ibiden Co Ltd | 多層プリント配線板及びその製造方法 |
JP2002271034A (ja) * | 2001-03-13 | 2002-09-20 | Ibiden Co Ltd | プリント配線板及びプリント配線板の製造方法 |
JP2002353365A (ja) * | 2001-05-30 | 2002-12-06 | Hitachi Ltd | 半導体装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06260756A (ja) | 1993-03-04 | 1994-09-16 | Ibiden Co Ltd | プリント配線板の製造方法 |
JPH06275959A (ja) | 1993-03-22 | 1994-09-30 | Hitachi Ltd | 多層配線基板とその製造方法および両面プリント配線板の製造方法 |
US5509200A (en) * | 1994-11-21 | 1996-04-23 | International Business Machines Corporation | Method of making laminar stackable circuit board structure |
US6165892A (en) | 1998-07-31 | 2000-12-26 | Kulicke & Soffa Holdings, Inc. | Method of planarizing thin film layers deposited over a common circuit base |
MY144574A (en) * | 1998-09-14 | 2011-10-14 | Ibiden Co Ltd | Printed circuit board and method for its production |
JP4117951B2 (ja) * | 1998-11-20 | 2008-07-16 | イビデン株式会社 | 多層プリント配線板の製造方法及び多層プリント配線板 |
JP2000101245A (ja) | 1998-09-24 | 2000-04-07 | Ngk Spark Plug Co Ltd | 積層樹脂配線基板及びその製造方法 |
JP2000244130A (ja) | 1998-12-25 | 2000-09-08 | Ngk Spark Plug Co Ltd | 配線基板、コア基板及びその製造方法 |
US6333857B1 (en) * | 1998-12-25 | 2001-12-25 | Ngk Spark Plug Co., Ltd. | Printing wiring board, core substrate, and method for fabricating the core substrate |
JP2000261147A (ja) | 1999-03-10 | 2000-09-22 | Shinko Electric Ind Co Ltd | 多層配線基板及びその製造方法 |
JP2001044591A (ja) | 1999-08-03 | 2001-02-16 | Ngk Spark Plug Co Ltd | 配線基板 |
EP1744606A3 (en) | 1999-09-02 | 2007-04-11 | Ibiden Co., Ltd. | Printed circuit board and method for producing the printed circuit board |
EP2081419B1 (en) | 1999-09-02 | 2013-08-07 | Ibiden Co., Ltd. | Printed circuit board and method of manufacturing printed circuit board |
JP2002111222A (ja) * | 2000-10-02 | 2002-04-12 | Matsushita Electric Ind Co Ltd | 多層基板 |
JP2002261455A (ja) | 2001-02-27 | 2002-09-13 | Kyocera Corp | 多層配線基板およびこれを用いた電子装置 |
US6847527B2 (en) * | 2001-08-24 | 2005-01-25 | 3M Innovative Properties Company | Interconnect module with reduced power distribution impedance |
JP2003264253A (ja) * | 2002-03-12 | 2003-09-19 | Shinko Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4488684B2 (ja) | 2002-08-09 | 2010-06-23 | イビデン株式会社 | 多層プリント配線板 |
US6995322B2 (en) * | 2003-01-30 | 2006-02-07 | Endicott Interconnect Technologies, Inc. | High speed circuitized substrate with reduced thru-hole stub, method for fabrication and information handling system utilizing same |
JP2004253738A (ja) * | 2003-02-21 | 2004-09-09 | Toshiba Corp | パッケージ基板及びフリップチップ型半導体装置 |
US6885541B2 (en) * | 2003-06-20 | 2005-04-26 | Ngk Spark Plug Co., Ltd. | Capacitor, and capacitor manufacturing process |
WO2005076683A1 (ja) * | 2004-02-04 | 2005-08-18 | Ibiden Co., Ltd. | 多層プリント配線板 |
-
2005
- 2005-02-03 KR KR1020087023059A patent/KR20080088670A/ko not_active Application Discontinuation
- 2005-02-03 KR KR1020097006223A patent/KR20090036152A/ko not_active Application Discontinuation
- 2005-02-03 KR KR1020067015667A patent/KR20060118578A/ko not_active Application Discontinuation
- 2005-02-03 US US10/565,078 patent/US7800216B2/en active Active
- 2005-02-03 TW TW099135471A patent/TW201106828A/zh unknown
- 2005-02-03 CN CN200580000214.8A patent/CN1771771B/zh active Active
- 2005-02-03 KR KR1020087023063A patent/KR101088338B1/ko active IP Right Grant
- 2005-02-03 EP EP05709703A patent/EP1713313A4/en not_active Withdrawn
- 2005-02-03 KR KR1020107014051A patent/KR101137749B1/ko active IP Right Grant
- 2005-02-03 WO PCT/JP2005/001610 patent/WO2005076682A1/ja not_active Application Discontinuation
- 2005-02-03 TW TW094103371A patent/TW200529722A/zh unknown
- 2005-02-03 CN CN201010156886A patent/CN101840898A/zh active Pending
- 2005-02-03 JP JP2005517730A patent/JP4722706B2/ja active Active
- 2005-02-03 CN CN201010156869A patent/CN101848597A/zh active Pending
-
2010
- 2010-08-27 US US12/869,841 patent/US8569880B2/en active Active
- 2010-11-16 JP JP2010256066A patent/JP5158179B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002064272A (ja) * | 2000-08-16 | 2002-02-28 | Ibiden Co Ltd | 多層プリント配線板及びその製造方法 |
JP2002271034A (ja) * | 2001-03-13 | 2002-09-20 | Ibiden Co Ltd | プリント配線板及びプリント配線板の製造方法 |
JP2002353365A (ja) * | 2001-05-30 | 2002-12-06 | Hitachi Ltd | 半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008081881A1 (ja) * | 2006-12-28 | 2008-07-10 | Ntt Docomo, Inc. | 送信機、受信機、移動局、無線基地局、移動通信システム及び移動通信方法 |
WO2014024754A1 (ja) * | 2012-08-07 | 2014-02-13 | 三菱瓦斯化学株式会社 | 半導体パッケージ用回路基板及びその製造方法 |
JP2020074434A (ja) * | 2020-01-16 | 2020-05-14 | 株式会社ニコン | 基板、撮像ユニットおよび撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1771771B (zh) | 2014-09-24 |
CN101840898A (zh) | 2010-09-22 |
TWI352565B (ko) | 2011-11-11 |
TWI341704B (ko) | 2011-05-01 |
KR20090036152A (ko) | 2009-04-13 |
TW200529722A (en) | 2005-09-01 |
JP4722706B2 (ja) | 2011-07-13 |
TW201106828A (en) | 2011-02-16 |
KR20080088670A (ko) | 2008-10-02 |
EP1713313A1 (en) | 2006-10-18 |
KR20080089528A (ko) | 2008-10-06 |
CN1771771A (zh) | 2006-05-10 |
JPWO2005076682A1 (ja) | 2007-10-18 |
US7800216B2 (en) | 2010-09-21 |
KR101137749B1 (ko) | 2012-04-25 |
KR20060118578A (ko) | 2006-11-23 |
CN101848597A (zh) | 2010-09-29 |
KR20100080634A (ko) | 2010-07-09 |
EP1713313A4 (en) | 2010-06-02 |
US8569880B2 (en) | 2013-10-29 |
US20060244134A1 (en) | 2006-11-02 |
JP2011044739A (ja) | 2011-03-03 |
US20100321914A1 (en) | 2010-12-23 |
JP5158179B2 (ja) | 2013-03-06 |
KR101088338B1 (ko) | 2011-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2005076682A1 (ja) | 多層プリント配線板 | |
JP4488684B2 (ja) | 多層プリント配線板 | |
KR101199285B1 (ko) | 다층프린트배선판 | |
KR101162522B1 (ko) | 다층프린트배선판 | |
WO2007074941A1 (ja) | 多層プリント配線板 | |
JP4947121B2 (ja) | 多層プリント配線板 | |
JP2005183466A (ja) | 多層プリント配線板 | |
JP2001244636A (ja) | プリント配線板 | |
JP4475930B2 (ja) | 多層プリント配線板 | |
JP2001244635A (ja) | プリント配線板の製造方法 | |
KR20050050077A (ko) | 다층프린트배선판 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 20058002148 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005709703 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006244134 Country of ref document: US Ref document number: 10565078 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2005517730 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020067015667 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: DE |
|
WWP | Wipo information: published in national office |
Ref document number: 2005709703 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 10565078 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 1020067015667 Country of ref document: KR |