WO2005055282A2 - Low loop height ball bonding method and apparatus - Google Patents

Low loop height ball bonding method and apparatus Download PDF

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Publication number
WO2005055282A2
WO2005055282A2 PCT/US2004/039676 US2004039676W WO2005055282A2 WO 2005055282 A2 WO2005055282 A2 WO 2005055282A2 US 2004039676 W US2004039676 W US 2004039676W WO 2005055282 A2 WO2005055282 A2 WO 2005055282A2
Authority
WO
WIPO (PCT)
Prior art keywords
wire
bond
capillary
fold
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/039676
Other languages
English (en)
French (fr)
Other versions
WO2005055282A3 (en
Inventor
Ivy W. Qin
Robert Wise
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kulicke and Soffa Investments Inc
Original Assignee
Kulicke and Soffa Investments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kulicke and Soffa Investments Inc filed Critical Kulicke and Soffa Investments Inc
Priority to JP2006541443A priority Critical patent/JP2007512714A/ja
Publication of WO2005055282A2 publication Critical patent/WO2005055282A2/en
Publication of WO2005055282A3 publication Critical patent/WO2005055282A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01551—Changing the shapes of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07511—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07521—Aligning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5434—Dispositions of bond wires the connected ends being on auxiliary connecting means on bond pads, e.g. on other bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5438—Dispositions of bond wires the bond wires having multiple connections on the same bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Definitions

  • the invention pertains to wire bonding on semiconductor devices.
  • the wire 17 is passed through a set of clamps 18 and
  • wire "tail” 23 is protruding from the tip of the capillary 11 , as shown in Figure
  • spark 16 termed an electric flame off (EFO) from an EFO wand 24.
  • EFO electric flame off
  • the capillary 11 is
  • This bond typically is termed a ball bond or first
  • the capillary 11 is then lowered to pinch the wire between the capillary and
  • ultrasonic energy may be applied to bond the pinched portion of the wire to the lead finger 21. This bond is termed a stitch bond or second bond.
  • connection 22 is termed a wire loop and is illustrated in Figure 11.
  • the minimal loop height is normally over 150
  • Loop height is defined as the maximum height of the wire above the
  • bonding surface e.g., the top surface of the bond pad.
  • the neck is the
  • thinner packages are generally referred to in the trade as low profile packages.
  • the desire to reduce the height of the package is the desire to reduce the height of the highest point of the wire loops, which, in many instances, is the limiting factor as to the height of an integrated circuit package.
  • reverse looping a wire looping technique known as reverse looping was developed.
  • the premise behind reverse looping is that, because the highest point of the wire loop is adjacent the ball bond, it would be desirable reverse the looping process so as to make the first, ball bond on the lead frame (or other substrate) and make the second, stitch bond on the bond pad of the die because the surface of the lead frame is lower than the surface of the die.
  • the highest point of the wire loop is near the lower bonding surface, thus reducing the overall height.
  • the stitch bond requires the capillary to come in contact with the bonding surface.
  • the bond pads on a die usually are very small and, thus, it is difficult to make a stitch bond on a bond pad on a die without the capillary contacting and, hence, damaging surrounding circuitry on the die.
  • the wire loops tends to sag to their lowest points close to the stitch bond.
  • the stitch bond site is higher than the ball bond site, the wire might contact the edge or the top surface of the die. This could lead to electrical shorts or breakage of the wire.
  • stitch bond 43 is formed on top of the first ball bond (or bump) 25.
  • This reverse looping process can provide low loop heights for
  • top of the die bond pad must be large enough to provide support for a stitch
  • the diameter of the bump will increase in the lateral
  • a bump is formed on the die
  • the capillary undergoes a set of coordinated xyz
  • bond site e.g., the lead frame or other substrate
  • capillary is raised in the z direction a designated height (herein termed the
  • the capillary may or may not be raised
  • FIGS. 1 A through 11 are elevation views illustrating the steps
  • Figures 2A through 2C are elevation views illustrating steps of a
  • Figure 3 is a pictorial elevation view of a folded wire loop
  • Figure 4 is a pictorial elevation view showing the various components
  • FIGS. 5A through 5O are elevation views illustrating the steps
  • Figure 6 is a pictorial elevation view showing the various components
  • Figure 7 is a side view of a bump and fold formed using the
  • Figures 8A and 8B are scanning electron micrographs of a
  • Figure 3 is a side elevation pictorial of a folded forward wire
  • FIG. 3 shows an
  • integrated circuit die 51 including a bond pad 53 on its top surface and a lead
  • the wire loop 45 is formed in accordance with the technique of the present invention may be considered to comprise five
  • Figures 5A through 5O illustrate the position of the capillary of
  • the vertical direction is termed the z direction and the
  • Figure 5E shows the capillary position after this step.
  • the direction of the fold offset is exactly opposite the xy direction toward the second bond site 65.
  • the distance of this xy motion is herein
  • the capillary 11 is raised again (in the positive z direction) a
  • Figure 5H shows the position of the capillary 11 and the condition of
  • the fold return motion is in the xy direction exactly opposite the
  • the fold return motion preferably is a purely horizontal (i.e.,
  • the fold return motion 78 may include a negative z component to return the capillary to the same height that
  • the capillary returns to a height below the
  • the fold return motion 78 may include a positive
  • the fold return offset In other words, the fold return
  • fold return motion 78 is less than the fold offset motion 76, the fold return
  • fold return motion 78 is longer than the fold offset motion 76, the fold return
  • the fold return motion 78 have the same xy (i.e., horizontal) magnitudes, then
  • the fold return offset is zero.
  • ultrasonic energy may be applied to facilitate bonding of the
  • Figure 5J shows the process at this point, which is essentially the same position as shown in Figure 51 since the capillary
  • FIG. 5K and 5L show the position of the capillary 11
  • the coordinated xyz motion can be relatively simple, comprising
  • the wire loop 59 is continuous with the bump 56, fold 57, and stitch
  • Heat and/or ultrasonic energy may be
  • Figure 5N illustrates the position of the capillary at this point in the process.
  • clamps 18 are then closed and the capillary 11 is raised further to snap
  • the looping technique of the present invention provides ultra-low loop heights because the wire exits the ball bond site pointing horizontally rather than vertically upward.
  • the wire bonding machine is controlled by motion control
  • the circuitry comprises a digital processing device such as a programmed general purpose computer, a digital signal processor, a state machine, a combinational logic circuit, a microprocessor, an application specific integrated circuit, or any other known digital processing means. If the circuitry comprises a computer, the invention
  • Figure 6 shows exemplary parameters that were used to form the fold shown in Figure 7 and subsequently the loop profile shown in Figures 8A and 8B.
  • the first three motions (separation height 75, fold offset 76 and fold factor 77) collectively determine the amount
  • the fold return motion 78 determines the final shape of the
  • the fold return motion 78 is specified by two parameters. Specifically, (1) the aforementioned fold return
  • bump height normally should be a
  • the bump height is -1.25 mil and the separation
  • the final position of the capillary is about 0.25 mil above the bump 56. This provides just enough flattening of the wire to form

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
PCT/US2004/039676 2003-11-26 2004-11-24 Low loop height ball bonding method and apparatus Ceased WO2005055282A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006541443A JP2007512714A (ja) 2003-11-26 2004-11-24 低いループ高さのボールボンディング方法およびその装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US52530503P 2003-11-26 2003-11-26
US60/525,305 2003-11-26
US10/988,053 2004-11-12
US10/988,053 US7347352B2 (en) 2003-11-26 2004-11-12 Low loop height ball bonding method and apparatus

Publications (2)

Publication Number Publication Date
WO2005055282A2 true WO2005055282A2 (en) 2005-06-16
WO2005055282A3 WO2005055282A3 (en) 2006-02-09

Family

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PCT/US2004/039676 Ceased WO2005055282A2 (en) 2003-11-26 2004-11-24 Low loop height ball bonding method and apparatus

Country Status (5)

Country Link
US (2) US7347352B2 (https=)
JP (1) JP2007512714A (https=)
SG (1) SG123792A1 (https=)
TW (1) TWI367533B (https=)
WO (1) WO2005055282A2 (https=)

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JP4298665B2 (ja) * 2005-02-08 2009-07-22 株式会社新川 ワイヤボンディング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007012187A1 (en) * 2005-07-26 2007-02-01 Microbonds Inc. System and method for assembling packaged integrated circuits using insulated wire bond

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TWI367533B (en) 2012-07-01
US7347352B2 (en) 2008-03-25
US20050109819A1 (en) 2005-05-26
US20080111252A1 (en) 2008-05-15
SG123792A1 (en) 2006-07-26
JP2007512714A (ja) 2007-05-17
TW200524068A (en) 2005-07-16
US7584881B2 (en) 2009-09-08
WO2005055282A3 (en) 2006-02-09

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