CN102187444B - 导电凸部、引线环及导电凸部、引线环的形成方法 - Google Patents

导电凸部、引线环及导电凸部、引线环的形成方法 Download PDF

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CN102187444B
CN102187444B CN201080002737.7A CN201080002737A CN102187444B CN 102187444 B CN102187444 B CN 102187444B CN 201080002737 A CN201080002737 A CN 201080002737A CN 102187444 B CN102187444 B CN 102187444B
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soldering appliance
methods
wire
lead
smoothing
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CN102187444A (zh
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加里·S·吉洛蒂
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Kulicke and Soffa Industries Inc
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Kulicke and Soffa Industries Inc
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    • H—ELECTRICITY
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    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
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    • B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
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Abstract

提供了形成导电凸部的方法。所述方法包括步骤：(1)使用焊接工具将无空气球焊接至焊接位置以形成焊接球；(2)在引线夹具打开的情况下将所述焊接工具提升至期望高度，同时放出与所述焊接球接续的引线；(3)闭合所述引线夹具；(4)在所述引线夹具仍然闭合的情况下将所述焊接工具降低至平滑化高度；(5)在所述引线夹具仍然闭合的情况下使用所述焊接工具使所述焊接球的上表面平滑化；以及(6)在所述引线夹具仍然闭合的情况下提升所述焊接工具以使所述焊接球与接合至所述焊接工具的引线分离。

Description

导电凸部、引线环及导电凸部、引线环的形成方法
相关申请的交叉引用
本申请要求2009年4月1日提交的第61/165,679号美国临时申请的优先权，其内容通过引用并入本文。
技术领域
本发明涉及导电凸部和利用导电凸部的引线环，还涉及形成导电凸部和引线环的改进方法。
背景技术
在半导体器件的加工和封装中，导电凸部被形成以用于提供电互连。例如，可以提供这种凸部以：(1)用于倒装芯片应用，(2)用作支座导体，(3)引线成环应用，(4)测试应用的测试点，等等。这种导电凸部可由不同技术形成。一种技术是使用引线诸如在线焊机或接线柱球焊机(stud bumping machine)上形成导体凸部。
在第7,229,906号美国专利(题为“METHOD AND APPARATUSFOR FORMING BUMPS FOR SEMICONDUCTORINTERCONNECTIONS USING A WIRE BONDING MACHINE(使用线焊机形成用于半导体互连的凸部的方法和装置)”)和第7,188,759号美国专利(题为“METHOD FOR FORMING CONDUCTIVE BUMPS ANDWIRE LOOPS(形成导电凸部和引线环的方法)”)中公开了在线焊机或球焊机上形成导电凸部的多种技术，二者的全部内容通过引用并入本文。
图1示出了在线焊机或球焊机上形成导电凸部的示例性顺序。在步骤1中，使无空气球100a位于焊接工具102的尖端。如本领域技术人员所理解，在步骤1之前，无空气球100a已经使用电子打火熄灭(electronic flame-off)装置等形成于悬挂在焊接工具102的尖端下方的引线100的端部。在步骤1中还示出了处于打开状态的引线夹具104。如本领域技术人员所理解，引线100通过机器上的引线线轴(未示出)提供。引线100自引线线轴穿过引线夹具104(并且穿过其他未示出的结构)并穿过焊接工具102延伸。
在形成无空气球100a(在步骤1之前)之后，向上牵引引线100(例如，使用真空控制拉紧器等)，使得无空气球100a位于如图1的步骤1所示的焊接工具102的尖端。在步骤2中，降低焊接工具102(以及包含引线夹具104的焊接头组件的其他元件)，并且将无空气球100a焊接至焊接位置106(例如，半导体芯片106的芯片焊盘)。如本领域技术人员所理解，可以利用超声波能量、热超声波能量、热压能量、XY工作台擦拭器、它们的组合、以及其他技术将无空气球100a焊接至焊接位置106。
在步骤2中将无空气球100a焊接至焊接位置106之后(其中，被焊接的无空气球此时可以称为焊接球100b)，在引线夹具104仍然打开的情况下，将焊接工具102提升至期望高度。这个高度可以称为分离高度(从图1的步骤3来看，可以看出已经提升了焊接工具102，使得焊接球100b不再位于焊接工具102的尖端)。在步骤4中，在引线夹具104仍然打开的情况下，使焊接工具102在至少一个水平方向上移动(例如，沿着机器的X轴或Y轴)以使焊接球100b的上表面平滑化。这种平滑化为导电凸部提供了期望的上表面，并且还削弱了焊接球100b和剩余引线之间的连接，从而有助于它们之间的分离。在步骤5中，将焊接工具102提升到另一高度(可以称为引线尾迹高度)，然后闭合引线夹具104。然后在步骤6中，提升焊接工具102以断开焊接球100b(现在可以称为导电凸部100c)和剩余引线100之间的连接。例如，可以将焊接工具102提升到EFO高度，EFO高度是电子打火熄灭装置在引线100的引线尾迹100d上形成无空气球的位置。
使用这些传统技术形成导电凸部具有某些缺陷。例如，在步骤4的平滑化运动期间，削弱了焊接球100b和剩余引线之间的连接；然而，在某些处理中，该连接可能被削弱为一点，在该点处连接过早地断开(即，在夹具104闭合之前，该连接可能就在提升至步骤5所示的尾迹高度期间分离)。如果这种过早分离发生，那么提供给下一个无空气球的引线尾迹(即，引线尾迹100d)可能很短(即，短尾现象)。为了避免这个问题，可以减少步骤4中的平滑化，从而该连接不会被过分削弱；然而，平滑化的这种减少可能对所产生的凸部表面造成有害影响。可能产生的另一个问题是长尾，即在引线尾迹上存在太多引线。这些问题往往导致产量损失，以及导电凸部之间的不一致性。
另外，在传统凸部上形成第二焊接(例如，通过SSB型处理)具有某些挑战，这些挑战涉及，例如，凸部的兼容性质以及凸部的上表面的物理结构。这些挑战往往导致不良成形的第二/针脚焊接以及潜在的短尾现象。
因此，期望提供改进的导电凸部，以及形成导电凸部的改进方法。
发明内容
根据本发明的示例性实施方式，提供了形成导电凸部的方法。所述方法包括步骤：(1)使用焊接工具将无空气球焊接至焊接位置以形成焊接球；(2)在引线夹具打开的情况下将所述焊接工具提升至期望高度，同时放出与焊接球接续的引线；(3)闭合所述引线夹具；(4)在所述引线夹具仍然闭合的情况下将所述焊接工具降低至平滑化高度；(5)在所述引线夹具仍然闭合的情况下使用所述焊接工具使所述焊接球的上表面平滑化；以及(6)在所述引线夹具仍然闭合的情况下提升所述焊接工具以使所述焊接球与接合至所述焊接工具的引线分离。
根据本发明的另一示例性实施方式，提供了形成引线环的方法。所述方法包括步骤：(1)根据本发明的形成导电凸部的步骤，在焊接位置上形成导电凸部；(2)使用所述焊接工具将引线的一部分焊接至另一焊接位置；(3)自引线的焊接部向所述导电凸部延伸一段引线；以及(4)将所述一段引线的端部焊接至所述导电凸部。
附图说明
当结合附图阅读下面的详细描述时，本发明可以得到最好的理解。需要强调的是，根据通常实践，附图的各种特征没有成比例绘制。相反地，为了清晰起见，各种特征的尺寸被任意的扩大或缩小。附图中包含下列图示：
图1是示出形成导电凸部的常规方法的一系列图解；
图2是示出根据本发明的示例性实施方式的形成导电凸部的方法的一系列图解；
图3A至图3B是根据图1的技术所形成的导电凸部的侧视图和俯视图；
图3C至图3D是根据图2的发明技术所形成的导电凸部的侧视图和俯视图；以及
图4A至图4B是示出根据本发明的示例性实施方式形成引线环的方法的图示。
具体实施方式
在本发明的某些示例性实施方式中，形成了导电凸部。导电凸部的上表面被平滑化，例如，使用焊接工具的XY平滑化运动。在沉积并且焊接无空气球以形成导电凸部之后，但在使上表面平滑之前，在引线夹具打开的情况下将焊接工具提升至期望高度(例如，尾迹高度)。然后闭合引线夹具并降低焊接工具以进行导电凸部上表面的平滑化。该处理在焊接工具顶部和引线夹具底部之间产生一段松弛引线。在完成凸部上表面的平滑化之后，提升焊接工具以使剩余引线与导电凸部分离。在这个处理中，该一段松弛引线此时有助于提供期望的引线尾迹长度，由此基本上减少了短尾和相关问题的可能性。
因此，根据本发明，在“平滑化”处理(见图2的步骤6)期间，引线夹具仍然闭合，这基本上减少(或者甚至避免)在处理过程中引线穿过焊接工具产生阻塞的可能性(这可能产生短尾误差)。相比于常规技术(其中，引线尾迹形成于平滑化完成之后)，引线尾迹形成于平滑化发生之前。另一个优势在于，由于没有出现削弱引线尾迹的平滑化运动，故引线尾迹往往比常规处理的引线尾迹更坚固，因此降低了额外误差的可能性。
图2示出了根据本发明在线焊机或球焊机上形成导电凸部的示例性顺序。在步骤1中，无空气球200a位于焊接工具202的尖端。如本领域技术人员所理解，在步骤1之前，无空气球200a已经使用电子打火熄灭装置等形成于悬挂在焊接工具的尖端下方的引线200的端部。在步骤1中还示出了处于打开状态的引线夹具204。
在形成无空气球200a(在步骤1之前)之后，向上牵引引线200(例如，使用真空控制拉紧器等)，使得无空气球200a位于如图2的步骤1所示的焊接工具202的尖端。在步骤2中，降低焊接工具202(以及包含引线夹具204的焊接头组件的其他元件)，并且将无空气球200a焊接至焊接位置206(例如，半导体芯片206的芯片焊盘)。如本领域技术人员所理解，可以利用超声波能量、热超声波能量、热压能量、XY工作台擦拭器、它们的组合、以及其他技术将无空气球200a焊接至焊接位置206。
在步骤2中焊接无空气球200a之后(但在步骤3之前)，可以根据需要完成其他运动。例如，在步骤3之前可以在焊接球200b上形成一叠引线，诸如在第7,229,906号美国专利中所描述的。当然，焊接球200b的其他运动和结构也是预期的。
在步骤2中将无空气球200a焊接至焊接位置206之后(其中，焊接的无空气球此时可以称为焊接球200b)，在引线夹具204仍然打开的情况下，在步骤3中将焊接工具202提升至期望高度。这个高度可以称为尾迹高度(从图2的步骤3来看，可以看出焊接工具的尖端与焊接球200b在这个高度处分离)；然而，应理解，可以选择不同的高度。虽然本发明对此没有限制，但是这个高度的示例性范围在5mil至20mil之间，并且处于被焊接的无空气球200b的顶部上方10至20mil之间。在步骤4中，闭合引线夹具204。在步骤5中，将焊接工具202降低至期望高度。这个高度可以称为分离高度(从图2的步骤5来看，可以看出已经降低了工具，使得焊接工具202的尖端刚好与焊接球200b的上表面接触)。虽然本发明对此没有限制，但是这个高度的示例性范围在0.1mil至2mil之间，并且处于步骤2中的焊接工具202的高度上方1mil至2mil之间。在步骤5中，通过在引线夹具闭合的情况下降低焊接工具202，已经提供了一段松弛引线200e，引线200e位于引线夹具204底部的下方并位于焊接工具的上方。在步骤6中，在引线夹具依然闭合的情况下，使焊接工具202在至少一个水平方向上(例如，沿着X轴、沿着Y轴、同时沿着X轴和Y轴、沿着其他水平方向等)移动以使焊接的无空气球200a的上表面平滑化。这种平滑化为导电凸部提供期望的上表面，并且还削弱了焊接球和剩余引线之间的连接，从而有助于它们之间的分离。在步骤7中，提升焊接工具202以断开焊接球200b(此时可以称为导电凸部200c)和剩余引线200之间的连接。例如，可以将焊接工具202提升到EFO高度，EFO高度是电子打火熄灭装置在引线200的引线尾迹200d上形成无空气球的位置。与步骤7的提升焊接工具202以断开连接有关，超声波能量等也可被应用以有助于使该一段松弛引线200e穿过焊接工具202的尖端以提供引线尾迹200d。
在图2中，在步骤5和步骤6中的焊接工具202的高度是相同的；然而，应理解，可以根据需要从一个步骤到下一个步骤改变该高度以实现期望的平滑化。
在扯动引线200以将剩余引线200与导电凸部200b分离之前，通过在该处理中提供一段松弛引线200e，从而提供期望的引线尾迹长度200d。因此，基本上减少了短尾的可能性(其中，没有足够的引线来形成悬挂在焊接工具202尖端下方的下一个无空气球)。因此，在图2的步骤6中，可以在不存在与过早分离有关的并发问题的大量风险的情况下完成期望级别的水平平滑化。
可以显著地改变图2的步骤6的平滑化。例如，平滑化操作可以包括焊接工具202在图2所示的焊接球200b的上表面上的单一水平运动。然而，在平滑化操作中可以提供多种运动(例如，来回运动、在不同方向上运动等)。此外，平滑化运动可以如步骤6所示是完全水平的，或者可以同时具有水平和垂直(例如，向上或向下)分量。因此，平滑后的表面可以根据需要在给定方向上倾斜。而且，步骤6的平滑化步骤可以与步骤5的焊接工具202的降低结合成单一(例如，同步)运动。也就是说，焊接工具202的运动可以沿着具有角度的路径(例如，如图2所示向下且向右)，由此在单一运动中完成步骤5的降低和步骤6的平滑化。
由于现在能够完成导电凸部上表面的期望级别的水平平滑化，故提供了一种更加期望的导电凸部。参照图3A至图3B，提供了根据常规技术所形成的导电凸部100c的侧视图和俯视图。这些图只是示意性的，并且并不旨在示出导电凸部的实际形状。导电凸部100c包括焊接至焊接位置(诸如图1中的焊接位置106)的下表面100c2，以及已经平滑化(例如，使用图1的步骤4)的上表面100c1。正如观察导电凸部100c的俯视图所看到的，上表面100c1的面积显著小于下表面100c2的面积。例如，上表面100c1的表面积可以在下表面100c2的表面积的50％至80％之间。
参照图3C至图3D，提供了根据本发明的示例性实施方式所形成的导电凸部200c的侧视图和俯视图。这些图只是示意性的，并且并不旨在示出导电凸部的实际形状。导电凸部200c包括焊接至焊接位置(诸如图2中的焊接位置206)的下表面200c2，以及已经平滑化(例如，使用图2的步骤6)的上表面200c1。正如观察导电凸部200c的俯视图所看到的，上表面200c1所占据的面积与下表面100c2所占据的面积几乎相同。例如，上表面200c1可以在下表面100c2的表面积的80％至98％之间，甚至在下表面100c2的表面积的90％至98％之间。与导电凸部的下表面相比，该凸部的上表面的相关表面积的增加至少部分地归因于根据本发明而实现的增加的水平平滑化。
本发明可用于在许多应用中形成导电凸部。例如，凸部可用于连接倒装芯片互连。另一个示例性应用是与装置的晶圆测试相关联的导电凸部。导电凸部的另一示例性用途是作为支座。例如，本发明的导电凸部可以用作与堆叠的芯片引线焊接相连的支座。此外，本发明的导电凸部可以用作与诸如图4A至图4B所示的支座针脚焊接(即，SSB焊接)连接的支座。
图4A示出已经形成于焊接位置406a上(例如，半导体芯片406的芯片焊盘406a)的导电凸部400c。半导体芯片406由基板408(例如，引线架408)支撑。例如，已经根据图2中所描述的方法或者根据本发明的其他方法形成了导电凸部400c。现在期望将焊接位置408a(例如，引线架408的引线指408a)与导电凸部400c电连接。图4B示出在引线指408a和导电凸部400c之间提供电互连的连续引线环410。如本领域技术人员所知，在引线指408a上形成焊接部410a(例如，第一焊接410a)。然后，朝着导电凸部400c延伸一段引线410b(与第一焊接410a相连)。然后，将引线部410c焊接(例如，将第二焊接410c形成为针脚焊接)至导电凸部400b。因此，导电凸部400b作为引线环410的支座。
引线部分410c(例如，第二焊接410c)至导电凸部400c的焊接可以是闭环控制处理。例如，可以监控焊接工具的z-位置，其中一旦焊接工具达到预定的z-位置，则关闭将引线部分410c焊接至导电凸部400c期间所施加的超声波能量。更具体地，在第二焊接410c形成于导电凸部400c上之前，焊接工具朝着导电凸部400c下降。在焊接工具(包括由焊接工具承载的引线部410c)和导电凸部400c之间的某一z-位置处压紧之后，可以建立参考位置(其中，参考位置可以是，例如，压紧的z-位置、稍高于压紧位置的z-位置、平滑化z-位置、在第二焊接形成期间施加超声波能量的z-位置、在焊接工具和凸部之间压紧之后预定时间的z-位置等)。然后，施加超声波能量以形成第二焊接410c，即，将焊接引线部410c焊接至导电凸部400c(其中，可在压紧之前、压紧时、焊接工具到达参考位置时等，打开超声波能量)。
然后，一旦焊接工具到达预定z-位置(例如，有或没有预定的时间延迟)，则关闭超声波能量(或减少例如至少50％的能量水平)，使得焊接工具不会过深地进入导电凸部400c。例如，可以相对于参考z-位置选择预定z-位置。也就是说，在焊接工具到达所选择的参考位置后，监控z-位置(例如，使用z-轴编码器或其他技术)以确定焊接工具到达预定位置的时间。当然，对确定预定z-位置(和/或参考z-位置)的其他技术的考虑也在本发明的范围内。
本文所公开的发明技术特别适用于铜引线焊接。铜引线具有某些物理特性，即使用常规球焊技术时往往增加短尾误差的可能性。因此，本发明提供了铜引线球焊和焊接处理的特别优势。当然，本发明技术也适用于其他类型的引线焊接，包括例如，金、铝、涂敷铜的钯引线焊接。
虽然主要关于某些示例性方法步骤按照预定顺序描述了本发明，但是本发明不限于此。在不脱离本发明范围的情况下，某些步骤可以重新排列或者省略，或者可以添加额外步骤。
虽然文中关于具体实施方式示出并描述了本发明，但是本发明不打算被限制为示出的细节。相反，在本权利要求书的等效内容和范围内，以及在不脱离本发明的情况下，可以对细节进行各种修改。

Claims (49)

1.一种形成导电凸部的方法，所述方法包括步骤：
（1）使用焊接工具将无空气球焊接至焊接位置以形成焊接球；
（2）在引线夹具打开的情况下将所述焊接工具提升至期望高度，放出与所述焊接球接续的引线；
（3）闭合所述引线夹具；
（4）在所述引线夹具仍然闭合的情况下将所述焊接工具降低至平滑化高度；
（5）在所述引线夹具仍然闭合的情况下使用所述焊接工具使所述焊接球的上表面平滑化；以及
（6）在所述引线夹具仍然闭合的情况下提升所述焊接工具以使所述焊接球与接合至所述焊接工具的引线分离，
其中，步骤（4）包括在所述引线夹具仍然闭合的情况下，通过将所述焊接工具降低至所述平滑化高度而在所述引线夹具和所述焊接工具之间形成一段松弛引线。
2.如权利要求1所述的方法，其中，步骤（1）包括使用超声波能量、热超声波能量、以及热压能量中的至少一种将所述无空气球焊接至所述焊接位置。
3.如权利要求1所述的方法，其中，步骤（1）包括使用（1）超声波能量、热超声波能量、以及热压能量中的至少一种，以及（2）线焊机的XY工作台的擦拭运动将所述无空气球焊接至所述焊接位置。
4.如权利要求1所述的方法，其中，步骤（2）包括将所述焊接工具提升至所述期望高度，所述期望高度是球焊处理的尾迹高度。
5.如权利要求1所述的方法，其中，步骤（2）包括将所述焊接工具提升至所述期望高度，所述期望高度处于所述焊接球的上表面上方5mil至20mil之间。
6.如权利要求1所述的方法，其中，步骤（4）包括将所述焊接工具降低至所述平滑化高度，使得所述焊接工具的尖端部与所述焊接球的上表面接触。
7.如权利要求1所述的方法，其中，步骤（4）包括将所述焊接工具降低至所述平滑化高度，所述平滑化高度比所述焊接工具在步骤（1）期间的高度高0.1mil至2mil。
8.如权利要求1所述的方法，其中，步骤（6）包括在所述焊接工具的提升期间施加超声波能量，以使所述一段松弛引线的至少一部分穿过所述焊接工具以形成引线尾迹。
9.如权利要求1所述的方法，其中，步骤（6）包括在所述焊接工具的提升期间施加超声波能量。
10.如权利要求1所述的方法，其中，步骤（4）和（5）至少部分同时进行。
11.如权利要求1所述的方法，其中，步骤（4）和（5）通过所述焊接工具的向下并具有角度的运动而进行。
12.如权利要求1所述的方法，其中，在步骤（5）期间，通过所述焊接工具的水平运动来使所述焊接球的上表面平滑化。
13.如权利要求1所述的方法，其中，在步骤（5）期间，通过所述焊接工具的具有向下和水平分量的运动来使所述焊接球的上表面平滑化。
14.如权利要求1所述的方法，其中，在步骤（5）期间，通过所述焊接工具的具有向上和水平分量的运动来使所述焊接球的上表面平滑化。
15.如权利要求1所述的方法，其中，在步骤（5）的至少一部分期间对所述焊接工具施加超声波能量。
16.一种形成引线环的方法，包括步骤：
（1）在焊接位置上形成导电凸部，形成所述导电凸部的步骤包括：
（a）使用焊接工具将无空气球焊接至焊接位置以形成焊接球；
（b）在引线夹具打开的情况下将所述焊接工具提升至期望高度，放出与所述焊接球接续的引线；
（c）闭合所述引线夹具；
（d）在所述引线夹具仍然闭合的情况下将所述焊接工具降低至平滑化高度，其中步骤（d）包括在所述引线夹具仍然闭合的情况下，通过将所述焊接工具降低至所述平滑化高度，在所述引线夹具和所述焊接工具之间形成一段松弛引线；
（e）在所述引线夹具仍然闭合的情况下使用所述焊接工具使所述焊接球的上表面平滑化；以及
（f）在所述引线夹具仍然闭合的情况下提升所述焊接工具以使所述焊接球与接合至所述焊接工具的引线分离，从而在所述焊接位置上形成导电凸部；
（2）使用所述焊接工具将引线的一部分焊接至另一焊接位置；
（3）自引线的焊接部向所述导电凸部延伸一段引线；以及
（4）将所述一段引线的端部焊接至所述导电凸部。
17.如权利要求16所述的方法，其中，步骤（3）包括自所述焊接部延伸所述一段引线，使得所述一段引线与所述焊接部分接续。
18.如权利要求16所述的方法，其中，步骤（a）包括使用超声波能量、热超声波能量、以及热压能量中的至少一种将所述无空气球焊接至所述焊接位置。
19.如权利要求16所述的方法，其中，步骤（a）包括使用（1）超声波能量、热超声波能量、以及热压能量中的至少一种，以及（2）线焊机的XY工作台的擦拭运动将所述无空气球焊接至所述焊接位置。
20.如权利要求16所述的方法，其中，步骤（b）包括将所述焊接工具提升至所述期望高度，所述期望高度是球焊处理的尾迹高度。
21.如权利要求16所述的方法，其中，步骤（b）包括将所述焊接工具提升至所述期望高度，所述期望高度处于所述焊接球的上表面上方5mil至20mil之间。
22.如权利要求16所述的方法，其中，步骤（d）包括将所述焊接工具降低至所述平滑化高度，使得所述焊接工具的尖端部与所述焊接球的上表面接触。
23.如权利要求16所述的方法，其中，步骤（d）包括将所述焊接工具降低至所述平滑化高度，所述平滑化高度比所述焊接工具在步骤（1）期间的高度高0.1mil至2mil。
24.如权利要求16所述的方法，其中，步骤（f）包括在提升所述焊接工具期间施加超声波能量以使所述一段松弛引线的至少一部分穿过所述焊接工具以形成引线尾迹。
25.如权利要求16所述的方法，其中，步骤（f）包括在所述焊接工具的提升期间施加超声波能量。
26.如权利要求16所述的方法，其中，步骤（d）和（e）至少部分地同时进行。
27.如权利要求16所述的方法，其中，步骤（d）和（e）包括通过所述焊接工具的向下并具有角度的运动而进行。
28.如权利要求16所述的方法，其中，在步骤（e）期间，通过所述焊接工具的水平运动来使所述焊接球的上表面平滑化。
29.如权利要求16所述的方法，其中，在步骤（e）期间，通过所述焊接工具的具有向下和水平分量的运动来使所述焊接球的上表面平滑化。
30.如权利要求16所述的方法，其中，在步骤（e）期间，通过所述焊接工具的具有向上和水平分量的运动来使所述焊接球的上表面平滑化。
31.如权利要求16所述的方法，其中，在步骤（e）的至少一部分期间对所述焊接工具施加超声波能量。
32.如权利要求16所述的方法，其中，在步骤（4）期间，监控所述焊接工具的z-位置，一旦所述焊接工具达到预定z-位置，就关闭在步骤（4）的所述焊接期间施加的超声波能量。
33.如权利要求32所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是所述焊接工具在步骤（e）期间的平滑化高度。
34.如权利要求32所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在步骤（4）期间打开超声波能量的初始z-位置。
35.如权利要求32所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在（1）所述焊接工具和所述一段引线的端部，与（2）所述导电凸部之间压紧变形之后预定时间的所述焊接工具的位置。
36.如权利要求16所述的方法，其中，在步骤（4）期间，监控所述焊接工具的z-位置，一旦所述焊接工具达到预定z-位置，就在预定的时间延迟后关闭在步骤（4）的所述焊接期间施加的超声波能量。
37.如权利要求36所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是所述焊接工具在步骤（e）期间的平滑化高度。
38.如权利要求36所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在步骤（4）期间打开超声波能量的初始z-位置。
39.如权利要求36所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在（1）所述焊接工具和所述一段引线的端部，与（2）所述导电凸部之间压紧变形之后预定时间的所述焊接工具的位置。
40.如权利要求16所述的方法，其中，在步骤（4）期间，监控所述焊接工具的z-位置，一旦所述焊接工具达到预定z-位置，就减少在步骤（4）的所述焊接期间施加的超声波能量水平。
41.如权利要求40所述的方法，其中，一旦所述焊接工具达到预定z-位置，就将所述超声波能量水平减少至少50％。
42.如权利要求40所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是所述焊接工具在步骤（e）期间的平滑化高度。
43.如权利要求40所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在步骤（4）期间打开超声波能量的初始z-位置。
44.如权利要求40所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在（1）所述焊接工具和所述一段引线的端部，与（2）所述导电凸部之间压紧变形之后预定时间的所述焊接工具的位置。
45.如权利要求16所述的方法，其中，在步骤（4）期间，监控所述焊接工具的z-位置，一旦所述焊接工具达到预定z-位置，就在预定的时间延迟后减少在步骤（4）的所述焊接期间施加的超声波能量水平。
46.如权利要求45所述的方法，其中，一旦所述焊接工具达到预定z-位置，就将所述超声波能量水平减少至少50％。
47.如权利要求45所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是所述焊接工具在步骤（e）期间的平滑化高度。
48.如权利要求45所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在步骤（4）期间打开超声波能量的初始z-位置。
49.如权利要求45所述的方法，其中，相对于参考z-位置选择所述预定z-位置，所述参考z-位置是在（1）所述焊接工具和所述一段引线的端部，与（2）所述导电凸部之间压紧变形之后预定时间的所述焊接工具的位置。
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9455544B2 (en) * 2010-08-10 2016-09-27 Kulicke And Soffa Industries, Inc. Wire loops, methods of forming wire loops, and related processes
US8899469B2 (en) 2013-03-04 2014-12-02 Kulicke And Soffa Industries, Inc. Automatic rework processes for non-stick conditions in wire bonding operations
TWI538762B (zh) * 2014-01-03 2016-06-21 樂金股份有限公司 銲球凸塊與封裝結構及其形成方法
US9165842B2 (en) * 2014-01-15 2015-10-20 Kulicke And Soffa Industries, Inc. Short tail recovery techniques in wire bonding operations
JP6515515B2 (ja) * 2014-12-11 2019-05-22 日亜化学工業株式会社 発光装置の製造法
WO2016126306A1 (en) * 2015-02-05 2016-08-11 Sikorsky Aircraft Corporation Self-powered multi-functional structural health monitoring sensor
US11145620B2 (en) * 2019-03-05 2021-10-12 Asm Technology Singapore Pte Ltd Formation of bonding wire vertical interconnects

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981371A (en) * 1996-03-15 1999-11-09 Kabushiki Kaisha Shinkawa Bump forming method
US6260753B1 (en) * 1998-08-07 2001-07-17 Stmicroelectronics S.R.L. Gold bumps bonding on connection pads and subsequent coining of their vertex
CN1497694A (zh) * 2002-10-16 2004-05-19 ESECó�׹�˾ 当用引线键合器键合时确定最佳键合参数的方法
US20040152292A1 (en) * 2002-09-19 2004-08-05 Stephen Babinetz Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
US20060054665A1 (en) * 2004-09-08 2006-03-16 Kulicke And Soffa Industries Inc. Methods for forming conductive bumps and wire loops

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0547770A (ja) * 1991-08-12 1993-02-26 Matsushita Electric Ind Co Ltd バンプ形成方法
JP2964724B2 (ja) * 1991-09-18 1999-10-18 松下電器産業株式会社 バンプ形成方法
KR100317117B1 (ko) * 1998-12-02 2001-12-22 이충전 사이클론 집진장치를 가지는 진공청소기
JP3854232B2 (ja) * 2003-02-17 2006-12-06 株式会社新川 バンプ形成方法及びワイヤボンディング方法
TWI301662B (en) * 2006-03-07 2008-10-01 Phoenix Prec Technology Corp Package substrate and the manufacturing method making the same
JP2007266062A (ja) * 2006-03-27 2007-10-11 Toshiba Corp 半導体装置の製造方法
US20070297151A1 (en) * 2006-06-27 2007-12-27 Mosley Larry E Compliant conductive interconnects

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981371A (en) * 1996-03-15 1999-11-09 Kabushiki Kaisha Shinkawa Bump forming method
US6260753B1 (en) * 1998-08-07 2001-07-17 Stmicroelectronics S.R.L. Gold bumps bonding on connection pads and subsequent coining of their vertex
US20040152292A1 (en) * 2002-09-19 2004-08-05 Stephen Babinetz Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
US20070199974A1 (en) * 2002-09-19 2007-08-30 Kulicke And Soffa Industries, Inc. Method and apparatus for forming bumps for semiconductor interconnections using a wire bonding machine
CN1497694A (zh) * 2002-10-16 2004-05-19 ESECó�׹�˾ 当用引线键合器键合时确定最佳键合参数的方法
US20060054665A1 (en) * 2004-09-08 2006-03-16 Kulicke And Soffa Industries Inc. Methods for forming conductive bumps and wire loops

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