WO2005045944A1 - オプトデバイスのパッケージ構造 - Google Patents
オプトデバイスのパッケージ構造 Download PDFInfo
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- WO2005045944A1 WO2005045944A1 PCT/JP2004/015053 JP2004015053W WO2005045944A1 WO 2005045944 A1 WO2005045944 A1 WO 2005045944A1 JP 2004015053 W JP2004015053 W JP 2004015053W WO 2005045944 A1 WO2005045944 A1 WO 2005045944A1
- Authority
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- WIPO (PCT)
- Prior art keywords
- resin
- opto
- lead frame
- opto device
- light
- Prior art date
Links
- 229920005989 resin Polymers 0.000 claims abstract description 328
- 239000011347 resin Substances 0.000 claims abstract description 328
- 230000002265 prevention Effects 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 26
- 230000001070 adhesive effect Effects 0.000 claims description 26
- 238000003860 storage Methods 0.000 claims description 15
- 239000000945 filler Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 230000009477 glass transition Effects 0.000 claims description 5
- 238000001721 transfer moulding Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 abstract description 4
- 238000005452 bending Methods 0.000 abstract description 3
- 230000035882 stress Effects 0.000 description 61
- 238000000465 moulding Methods 0.000 description 14
- 238000004088 simulation Methods 0.000 description 12
- 230000008646 thermal stress Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000004364 calculation method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Definitions
- the present invention relates to a package structure of an opto-device used in, for example, optical communication, lighting, an automobile, or the like and used under a relatively severe temperature environment.
- an opto device such as a CCD (Charge Coupled Device) is mounted on a device mounting portion of a lead frame, and the opto device is connected to a lead portion of the lead frame by a wire.
- a device in which the above-mentioned opto device, a wire, and a lead frame are sealed with a light-transmitting resin JP-A-2000-173947.
- the light-transmitting resin is formed in a substantially rectangular parallelepiped shape using a material having a good transparency to light incident on the opto device.
- a lens is integrally formed on the upper surface of the light-transmitting resin, and the light enters the opto-device via the lens.
- a lead portion of the lead frame is protruded from a side surface of the light transmitting resin, and a knock of the opto device is connected to a predetermined electrode with the lead portion.
- the conventional opto-device package structure requires the filler to reduce the coefficient of linear expansion in the light-transmitting resin in order to ensure the light-transmitting resin to transmit light. Not mixed. Therefore, the linear expansion coefficient of the light transmitting resin is several times the linear expansion coefficient of the opto device and the wire material.
- the thermal stress of the light-transmitting resin causes There is a problem that breakage of the device and breakage of the opto device occur. Furthermore, if cracks occur in the light-transmitting resin itself, there is a problem.
- an object of the present invention is to solve the problem of wire breakage in the package structure of an opto device.
- the purpose of the present invention is to prevent the destruction of the optical device and the optical device and to prevent the crack of the light transmitting resin.
- the knock structure of the opto device of the present invention is as follows.
- a lead frame having a hole through which light entering or exiting the opt device passes and mounting the opt device, and a lead portion electrically connected to the opt device;
- a first resin that is disposed on the side of the lead frame opposite to the side on which the opto device is mounted, and that is permeable to the light;
- At least a part of the lead frame is disposed on the side on which the opto device is mounted, the opto device and a wire are sealed, and a second coefficient of linear expansion is lower than that of the first resin.
- a crack prevention structure that makes it difficult for the first resin to crack
- the package structure of the opto device has a lower linear expansion coefficient than that of the first resin because the second resin for sealing the opto device and the wire has a lower coefficient of thermal expansion.
- the thermal stress acting on the opto-device and the wire is effectively reduced even when used in an environment where the temperature is relatively large. Therefore, the problem that the opto device is broken or the wire is broken is effectively prevented.
- the first resin is hardly cracked by the crack prevention structure. Become. Therefore, even when the first resin is used in an environment where the change in temperature is relatively large, the problem that cracks occur in the first resin is effectively prevented.
- the package structure of the opto device of one embodiment is as follows:
- the above crack prevention structure A bent portion provided on the lead portion of the lead frame and bent to the side on which the opto device is mounted;
- a second resin portion located on the opposite side of the bent device from the side on which the opto device is mounted;
- the lead portion of the lead frame is provided with a bent portion bent on the side on which the opto device is mounted, and the lead portion is more bent than the bent portion of the lead portion.
- the second resin portion is located on the side opposite to the side on which the remote device is mounted. The end of the first resin is in contact with the second resin. Thereby, the shear stress generated at the end of the first resin is effectively reduced. As a result, even when the first resin is used in an environment where the change in temperature is relatively large, the problem that cracks occur in the first resin is effectively prevented.
- the package structure of the opto device of one embodiment is as follows.
- a concave portion provided on the lead portion of the lead frame and having a concave side opposite to the side on which the opto device is mounted;
- the lead portion of the lead frame is provided with a concave portion on the side opposite to the side on which the opto device is mounted, and the concave portion is provided in the concave portion.
- the second resin part is located.
- the end of the first resin is in contact with the second resin.
- the package structure of the opto device of one embodiment is as follows:
- a bent portion provided on the lead portion of the lead frame and bent to the side on which the opto-device is mounted; An end portion of the first resin having an end surface connected to an edge of the bent portion;
- the lead portion of the lead frame is provided with a bent portion bent toward the side on which the opto device is mounted.
- the end face of the end of the first resin is connected to the edge of the bent portion.
- the package structure of the opto device of one embodiment is as follows.
- the end surface of the end of the first resin is formed on substantially the same plane as the surface of the bent portion opposite to the side on which the opto device is mounted.
- the end face force of the end of the first resin is formed on substantially the same plane as the surface of the bent portion provided on the lead portion of the lead frame, The shear stress generated at the end of the first resin is reduced. Therefore, the problem that cracks occur in the first resin is effectively prevented.
- the package structure of the opto device of one embodiment is as follows.
- the second resin is formed by transfer molding.
- the second resin is formed by the transfer mold. Therefore, the residual stress generated in the opto device or wire sealed by the second resin can be effectively reduced.
- the package structure of the opto device of one embodiment is as follows.
- the second resin does not contain a release agent.
- the adhesion between the second resin and the first resin is improved.
- the package structure of the opto device of one embodiment is as follows:
- the first resin is mixed with a filler for reducing the coefficient of linear expansion.
- the first resin since the first resin has a reduced linear expansion coefficient due to the filler, a difference between the second resin and the linear expansion coefficient of the lead frame is reduced. . Therefore, the first resin is prevented from generating excessive thermal stress, and is effectively prevented from generating cracks.
- the amount of the filler mixed into the first resin is preferably such that the transmittance of the first resin to the light is not significantly reduced.
- the package structure of the opto device of one embodiment is as follows.
- the crack preventing structure is the first resin
- the first resin has a lens unit that collects light incident on or emitted from the opto device, and a base unit connected to the lens unit,
- the base has a thickness of 0.5 mm or less.
- the stress concentrated on the base portion of the first resin is reduced. Therefore, generation of cracks in the first resin is effectively prevented.
- the package structure of the opto device of one embodiment is as follows.
- the crack preventing structure is the first resin
- the first resin has a lens portion that collects light that enters or exits the opto device, and a base portion that is connected to the lens portion. It has an area smaller than the area of the mounting portion of the lead frame.
- the stress concentrated on the base portion of the first resin is reduced. Therefore, generation of cracks in the first resin is effectively prevented.
- the package structure of the opto device of one embodiment is as follows.
- the crack preventing structure is the first resin
- the first resin has a lens portion that collects light that enters or exits the opto device, and a base portion that is connected to the lens portion.
- the base portion has an area smaller than the area of the mounting portion of the lead frame, and the base portion has a thickness smaller than the thickness of the lens portion.
- the stress concentrated on the base portion of the first resin is reduced. Therefore, generation of cracks in the first resin is effectively prevented.
- the package structure of the opto device of one embodiment is as follows.
- the second resin is opposite to the side of the lead frame on which the opto device is mounted.
- a part is arranged on the opposite side, and a part of the second resin is arranged on at least a part of a part of the lead frame other than the part where the first resin is arranged.
- a part of the second resin is arranged on the same side of the lead frame as the first resin, so that, for example, the second resin It can be mounted on other equipment based on a part of the resin of 2. Therefore, a knock structure of the opto device that can be aligned on the basis of the outer shape is obtained.
- the package structure of the opto device of one embodiment is as follows:
- the crack preventing structure is the first resin
- the first resin has a lens portion for collecting light incident on or emitted from the opto device, and a base portion connected to the lens portion, and is bonded to at least the lead frame with an adhesive. .
- the first resin is formed separately from the lead frame without using, for example, insert molding, and is bonded to the lead frame with the adhesive. Therefore, it is possible to prevent the occurrence of stress due to molding shrinkage, for example, when formed by insert molding. As a result, generation of cracks in the first resin can be effectively prevented.
- the package structure of the opto device of one embodiment is as follows:
- the adhesive contains a resin having a glass transition point lower than the minimum storage temperature.
- the adhesive is lower than the minimum storage temperature! Since the adhesive contains a resin having a glass transition point, the adhesive has relatively high elasticity in a normal use environment of the knock structure of this opto device. Therefore, since the shear stress generated between the first resin and the lead frame can be reduced, cracks in the first resin can be effectively prevented.
- the above storage temperature is the range of the ambient temperature that can be stored without applying an electrical load, as specified in JIS-C7021-B10! , U.
- the package structure of the opto device of one embodiment is as follows.
- the adhesive contains a resin having a curing point equal to or higher than the minimum storage temperature and equal to or lower than the maximum storage temperature.
- the adhesive is at least the minimum storage temperature and at the maximum storage temperature. Since it contains a resin having the following curing point, the thermal stress generated by the curing can be relatively reduced when the adhesive is cured. Therefore, since the shearing stress generated in the first resin can be reduced, generation of cracks in the first resin can be effectively prevented.
- the package structure of the opto device of one embodiment is as follows:
- the crack preventing structure is the first resin
- the first resin has a plurality of lens units that collect light incident or emitted to the opto device, and a plurality of base units connected to the plurality of lens units, respectively.
- the base portions are separated from each other.
- the plurality of lens portions and the base portion are separated from each other, stress concentrated on the base portion of the first resin is reduced. Therefore, the crack generation force of the first resin is effectively prevented.
- the first resin that transmits light entering or exiting the opto device is arranged on one side of the mounting portion of the lead frame.
- the opto device and a second resin for sealing the wire are arranged on the other side of the mounting portion, and the second resin has a lower linear expansion coefficient than the first resin. Therefore, even when the device is used in an environment where the temperature change is relatively large, the thermal stress acting on the opto device and the wire can be effectively reduced, and the problem of the destruction of the opto device and the breakage of the wire can be effectively prevented. .
- the first resin is provided with a crack prevention structure that makes it difficult for cracks to occur, the first resin has a higher linear expansion coefficient than a lead frame or the like. Even when the first resin is used in a relatively large environment, it is possible to effectively prevent the first resin from cracking.
- FIG. 1A is a cross-sectional view showing a knock structure of the opto device according to the first embodiment of the present invention.
- FIG. 1B is a plan view showing a package structure of the opto device of the first embodiment.
- FIG. 2 is a cross-sectional view showing a package structure of the opto device of the second embodiment.
- FIG. 3 is a cross-sectional view showing a package structure of the opto device of the third embodiment.
- FIG. 4 is a cross-sectional view showing a package structure of the opto device of the comparative example.
- FIG. 5 is a cross-sectional view showing a package structure of the opto device of the fourth embodiment.
- FIG. 6 is a cross-sectional view showing a package structure of the opto device of the fifth embodiment.
- FIG. 7 is a cross-sectional view showing a package structure of the opto device of the sixth embodiment.
- FIG. 8 is a cross-sectional view showing a package structure of the opto device of the seventh embodiment.
- FIG. 9 is a plan view showing a modification of the package structure of the opto device of the fifth embodiment.
- FIG. 1A is a cross-sectional view showing a node / cage structure of the opto device according to the first embodiment of the present invention
- FIG. 1B is a plan view of a package structure of the opto device.
- an LED (light-emitting diode) 6 as the opto-device is mounted on the lower surface of the mounting portion 5 of the lead frame in FIG. Lee above
- the mounting portion 5 of the frame is provided with an opening 5a through which the light emitted from the LED 6 passes, and the light emitting portion of the LED 6 faces the opening 5a.
- the LED 6 is electrically connected to the lead portion 3 of the lead frame by a wire 9.
- the wire 9 is arranged on the mounting portion of the lead frame on the side where the LED 6 is mounted.
- the LED 6 and the wire 9 are sealed with a low-stress resin 2 mixed with silica as a filler.
- the low-stress resin 2 is arranged on the mounting portion 5 of the lead frame on the side where the LED 6 is mounted.
- a light-transmitting resin 8 made of a material that is transparent to the light emitted from the light LED 6 is disposed on the mounting frame 5 on the side opposite to the side on which the LED 6 is mounted. I have.
- the light-transmitting resin 8 is formed by integrally forming a lens portion 8a that collects light emitted from the LED 6 and a base portion 8b that supports the lens portion 8a.
- the base portion 8b has a trapezoidal shape in cross section and a rectangular shape in a plane.
- the low-stress resin 2 for example, a resin obtained by adding a filler such as silica having a small linear expansion coefficient to an epoxy resin to reduce the overall linear expansion coefficient is used.
- a transparent epoxy resin for example, a transparent epoxy resin is used.
- the knock structure of the above-mentioned opto device has a crack prevention structure.
- This crack prevention structure includes a bent portion 31 provided in the lead portion of the lead frame, a low-stress resin portion 21 located on the opposite side of the bent portion 31 from the side on which the LED 6 is mounted, and An end 81 of the light-transmitting resin is in contact with the low-stress resin portion 21.
- the bent portion 31 of the lead portion of the lead frame is bent to the side on which the LED 6 is mounted.
- the LED 6 and the wire 9 are sealed with the low-stress resin 2.
- the low-stress resin 2 has a linear expansion coefficient of Si (silicon) and GaAs ( This value is close to the linear expansion coefficient of the LED 6 formed of gallium arsenide) and the linear expansion coefficients of the lead frame and wires. Therefore, even when the LED 6 and the wire 9 are used in an environment where the temperature changes relatively large, the thermal stress acting on the LED 6 and the wire 9 can be effectively reduced. As a result, the problem of breaking the LED 6 and the problem of breaking the wire 9 can be effectively prevented.
- the package structure of the opto device has the above-described crack preventing structure, Even when used in an environment where the temperature change is relatively large, cracks in the light-transmitting resin 8 can be effectively prevented. That is, since the light-transmitting resin 8 does not contain a filler in order to maintain good transmittance to the light from the LED 6, the linear expansion coefficient of the lead frame and the low-stress resin 2 is reduced. Has several times the coefficient of linear expansion. In the crack preventing structure, since the end portion 81 of the light transmitting resin is in contact with the portion 21 of the low stress resin, the end portion 81 of the light transmitting resin is generated. The shear stress is smaller than, for example, a case where the shear stress is in contact with the lead portion of the lead frame. As a result, the light transmitting resin 8 can effectively prevent the occurrence of cracks.
- the package structure of the opto device can be easily manufactured by separately molding the low-stress resin 2 and the light-transmitting resin 8 on the lower side and the upper side of the lead frame. That is, for example, a glass lens for condensing the light emitted from the LED is not required to perform the positioning and the like of the glass lens than insert molding with a low stress resin, so that the glass lens can be easily manufactured.
- the low-stress resin 2 is disposed only on the side of the lead frame on which the LED 6 is mounted, the molding process is more efficient than the conventional method in which both sides of the lead frame are sealed with the light equivalent resin alone.
- the fluidity of the resin in the mold is good. Therefore, the problem of bubbles occurring in the sealing resin can be prevented.
- the position of the gate of the molding die can be set with relatively few restrictions. Therefore, the package structure of the above opto device can be manufactured relatively easily and inexpensively by two-color molding.
- FIG. 2 is a cross-sectional view showing a package structure of the opto device according to the second embodiment of the present invention.
- the package structure of the opto device according to the second embodiment differs from the knock structure of the opto device according to the first embodiment only in that the structure of the crack prevention structure is different.
- the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description is omitted.
- the crack prevention structure provided in the package structure of the opto device of the second embodiment includes a concave portion 32 provided in the lead portion 3 of the lead frame and a low-stress resin located in the concave portion 32. And a light transmitting resin end 81 in contact with the low stress resin portion 22.
- the concave portion 32 of the lead portion of the lead frame is concave on the side opposite to the side on which the LED 6 is mounted.
- the package structure of the opto device of the present embodiment has a relatively large temperature change, and even when used in an environment, the crack preventing structure described above can effectively prevent the light-transmitting resin 8 from cracking. Can be prevented. That is, in the crack prevention structure, since the end portion 81 of the light transmitting resin is in contact with the portion 22 of the low stress resin, the shear stress generated at the end portion 81 of the light transmitting resin is effective. To be reduced. Therefore, although the light transmitting resin 8 has a linear expansion coefficient several times that of the lead frame and the low stress resin 2, it is possible to effectively prevent the occurrence of cracks.
- FIG. 3 is a cross-sectional view showing a package structure of the opto device according to the third embodiment of the present invention.
- the package structure of the opto device according to the third embodiment differs from the knock structure of the opto device according to the first embodiment only in the point that the configuration of the crack prevention structure is different.
- the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description is omitted.
- the crack prevention structure provided in the package structure of the opto device of the third embodiment is a light transmitting structure having a bent portion 33 provided on the lead portion 3 of the lead frame and an end surface 83 connected to an edge of the bent portion 33. And the end 81 of the resin.
- the bent portion 33 of the lead portion of the lead frame is bent toward the side on which the LED 6 is mounted.
- the temperature change is relatively large, and even when the package is used in an environment, the crack preventing structure can effectively prevent the light transmitting resin 8 from cracking. Can be prevented. That is, in the above-described crack prevention structure, the end 81 of the light-transmitting resin contacts the bent portion 33 of the lead portion, and the end surface 83 of the end of the light-transmitting resin forms an edge of the bent portion 33. The shearing stress generated at the end portion 81 of the light-transmitting resin is effectively reduced by the configuration following the above. Therefore, the light transmitting resin 8 has a linear expansion coefficient several times that of the lead frame and the low stress resin 2. Despite having, cracks can be effectively prevented from occurring.
- the method for forming the light transmitting resin 8 is not particularly limited.
- the low-stress resin 2 seals the LED 6 and the wires 9 and the like, it is preferable to use a transfer mold to reduce residual stress on these components.
- a release agent is not used in the low-stress resin 2.
- a release agent is used for the low-stress resin, when the light-transmitting resin is molded after molding the low-stress resin, the release agent seeps out of the low-stress resin, and the low-stress resin and the light-transmitting resin are exuded. This is because the adhesiveness to the resin may be adversely affected.
- the light transmitting resin 8 does not impair the light transmitting property (light transmittance)! /
- a filler such as silica is mixed to the extent that the linear expansion coefficient is reduced. Good. Thereby, the shear stress generated in the light-transmitting resin can be further reduced, and the generation of cracks in the light-transmitting resin can be more effectively prevented.
- the LED 6 may be another opto-device such as a CCD, VCSEL (surface emitting semiconductor laser), PD (photodiode), etc.! / ⁇ .
- the shapes of the light-transmitting resin 8 and the low-stress resin 2 are not limited to rectangular parallelepipeds, and can be changed to other shapes as needed.
- the shape of the lead frame can be changed to another shape as needed.
- the mounting section 5 and the lead section 3 may be formed integrally, and the number of the lead section 3 may be any number.
- the package structure of the opto device of the first to third embodiments was manufactured, and a test was performed in an environment where the temperature was changed in a range of -40 ° C to 105 ° C. Further, with respect to the package structure of the photodevice of the first to third embodiments, the shear stress generated under the conditions of the test was calculated by a simulation by FEM (finite element method) using an electronic computer. Further, as a comparative example, a test of a knockage structure of an opto device having no crack prevention structure of the present invention and a calculation of a shear stress were performed.
- FIG. 4 is a cross-sectional view showing a package structure of the opto device of the comparative example.
- This Opt The knocking structure of the device is such that the lead portion 103 of the lead frame projects laterally along the boundary between the light-transmitting resin 8 and the low-stress resin 2 and has no crack prevention structure. Except for the differences, it has the same components as the package structure of the opto device of the first embodiment.
- the same components as those of the first embodiment of FIG. 1 are denoted by the same reference numerals.
- the materials used for fabricating the node / cage structure of the opto devices of the first to third embodiments and the comparative example are as follows. That is, EME6710 manufactured by Sumitomo Belite Co., Ltd. was used as the low stress mold resin 2. In addition, Nitto Denko NT600 was used for the light-transmitting resin 8, and Kobe Steel's copper alloy KFC was used for the lead frame. The thickness of the low-stress resin 2 was set to 2 mm, the thickness of the light-transmitting resin 8 was set to 1 mm, and the thickness of the lead frame was set to 0.25 mm. With these components, a package structure with a package size of 6 mm square was created.
- Table 1 shows the physical property values of the materials of each component.
- the linear expansion coefficient of the low-stress resin 102 is such that a filler is mixed therein, it is used for a Cu alloy used for a lead frame, Au used for a wire, and LED6.
- the value is close to the linear expansion coefficients of GaAs and Si.
- the light transmissive resin 108 is mixed with a filler in order to avoid a decrease in the transmissivity of the LED 6 with respect to the emitted light, so that the line is several times larger than other constituent materials. Has an expansion coefficient.
- the package structures of the opto-devices of the first to third embodiments and the comparative example were manufactured.
- This package structure consists of a low-stress resin 2 insert-molded into a lead frame on which LEDs 6 are mounted, and then a light-transmitting resin 108 was manufactured.
- a temperature cycle test was performed by placing the knock structure of these optodevices in an environment where the temperature changes in the range of 40 ° C to 105 ° C.
- a crack was hardly generated at the end 81 of the light-transmitting resin.
- the portions 21, 22 of the low-stress resin that are in contact with the end portion 81 of the light-transmitting resin have a different linear expansion coefficient from the light-transmitting resin 8, but have a different Young's modulus. It is considered that this is because the shear stress generated at the boundary between these resins was relatively small because the resin was relatively small.
- the end face 83 of the end portion of the light-transmitting resin is formed so as to be continuous with the edge of the bent portion 31 of the lead portion of the lead frame. It is considered that this is because the shear stress of 81 was reduced.
- the lead portion 3 of the lead frame is made of a light-transmitting resin as the first resin and a low-stress resin as the second resin. It is considered that by forming the second resin so that only the second resin also protrudes without protruding from the boundary between the first resin and the second resin, generation of excessive shear stress in the first resin was prevented.
- the lead portion 3 of the lead frame is bent at the boundary between the light-transmitting resin as the first resin and the low-stress resin as the second resin. It is considered that the formation of the portion so that the edge of the portion was positioned prevented the generation of excessive shear stress in the first resin.
- Table 2 shows calculation results of simulation by FEM for the package structures of the opto devices of the first to third embodiments and the comparative example.
- the glass transition point of the light transmitting resin 8 is 120 ° C
- the point at which the overall stress of the package structure becomes zero is set to 120 ° C
- the temperature condition is set to 40 ° C. 105 ° C
- the simulation corresponding to the temperature cycle test was performed by changing the values between the conditions.
- position A is at the end 81 of the light-transmitting resin or near the end 81 of the light-transmitting resin. It is a portion in contact with the widthwise ends of the parts 3 and 103 and the low-stress resin 2.
- position B near the end 81 of the light-transmitting resin or near the end 81 of the light-transmitting resin, the light-transmitting resin 8 is connected to the lead portions 3 and 103 of the lead frame. This is the part that contacts the center in the width direction.
- the simulation results in Table 2 correspond favorably to the results of the actual temperature cycle test.
- the NT600 manufactured by Nitto Denko used for the production of the light-transmitting resin 8 has a bending strength of 13 OMpa, and the shear strength of the resin is generally 1Z3 of the bending strength.
- the shear strength of Fat 8 can be estimated to be about 45 MPa.
- the shear stress obtained by the simulation calculation is less than 45 Mp at positions A and B! / The end 81 had a crack-free force.
- the shear stress calculated by the simulation slightly exceeds 45 Mp at the position A, but the temperature 81 does not cause cracks at the end 81 of the light-transmitting resin in the temperature situ test. I got it.
- the cracks generated in the light-transmitting resin 8 are particularly likely to occur at the portions where the ends 81 of the light-transmitting resin are in contact with the lead portions 103 of the lead frame. Extremely large shear stress is generated at the parts that also contact low-stress resin 2 at both ends in the width direction.
- the cracks in the light transmitting resin 8 can be effectively reduced by the crack preventing structure because the shear stress at the end 81 of the light transmitting resin can be effectively reduced. It is thought that it can be prevented effectively.
- FIG. 5 is a cross-sectional view showing a package structure of the opto device according to the fourth embodiment of the present invention.
- the package structure of the opto device of the fourth embodiment is different from the knock structure of the opto device of the first embodiment only in that the structure of the crack prevention structure is different.
- the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description will be omitted.
- the crack preventing structure provided in the package structure of the opto device of the present embodiment is realized by setting the thickness of the base 8 b of the light-transmitting resin 8 to a predetermined thickness.
- the base 8b is a portion of the light-transmitting resin 8 that supports the lens 8a.
- the thermal stress generated in the light-transmitting resin 8 is mainly caused by a difference between the linear expansion coefficient and the Young's modulus of the lead frames 3 and 5.
- the thickness of the base 8b of the light-transmitting resin 8 increases, the shear stress generated between the lead frames 3, 5 and the light-transmitting resin 8 increases. The stress concentration tends to occur at the ends of the steel, and cracks are likely to occur.
- the thickness of the base 8b of the light-transmitting resin 8 is set to 0.5 mm or less, the shear stress generated at the end 81 of the light-transmitting resin can be effectively reduced. That is, despite the fact that the light transmitting resin 8 has a linear expansion coefficient several times that of the lead frames 3 and 5 and the low stress resin 2, Cracking of the property resin 8 can be effectively prevented.
- the thickness of the base 8b of the light-transmitting resin 8 is preferably as thin as possible from the viewpoint of preventing cracks, but the lower limit is considered in consideration of the fluidity of the resin during molding. Is preferably about 0.3 mm.
- FIG. 6 is a sectional view showing the package structure of the opto device according to the fifth embodiment of the present invention.
- the package structure of the opto device of the fifth embodiment differs from the knock structure of the opto device of the first embodiment only in the point that the structure of the crack prevention structure is different.
- the same components as those in the first embodiment are denoted by the same reference numerals, and detailed description is omitted.
- the crack prevention structure provided in the package structure of the opto device of the present embodiment is such that the area of the light-transmitting resin 8 is smaller than the area of the mounting portion 5 of the lead frame when viewed from the light emission direction of the LED 6. It is realized by doing.
- the light-transmitting resin 8 is formed of a lens portion 8a and a base portion 8b that supports the lens portion 8a, and the area of the light-transmitting resin 8 is equal to the area of the base portion 8b. It is the same as the area.
- the thermal stress generated in the light-transmitting resin 8 is generated mainly due to a difference between the linear expansion coefficient and the Young's modulus of the lead frames 3 and 5.
- the shear stress generated between the light-transmitting resin 8 and the lead frames 3 and 5 near the ends of the light-transmitting resin 8 increases.
- the concentration of stress tends to occur at the ends of the resin 8, and cracks are likely to occur.
- the light-transmitting resin 8 is formed. It is possible to effectively reduce the shear stress generated at the end 81 of the wire. That is, despite the fact that the light transmitting resin 8 has a linear expansion coefficient several times that of the lead frames 3 and 5 and the low stress resin 2, The generation of cracks in the sex resin 8 can be effectively prevented.
- the light-transmitting resin 8 is composed of a plurality of lens portions 8a, 8a 'and a plurality of base portions 8b, 8b--' connected to the plurality of lens portions 8a. When formed, the plurality of lens portions 8a and the base portion 8b are separated from each other, so that The generation of cracks in the transient resin 8 can be more effectively prevented.
- FIG. 7 is a cross-sectional view showing a package structure of the opto device according to the sixth embodiment of the present invention.
- the package structure of the opto device of the present embodiment has a crack prevention structure similar to the crack prevention structure of the knock structure of the opto device of the fifth embodiment. That is, the light-transmitting resin 8 is formed of a lens part 8a and a base part 8b supporting the lens part 8a, and the area of the base part 8b, which is the area of the light-transmitting resin 8 The force is formed smaller than the area of the mounting portion 5 of the lead frame when viewed from the light emitting direction of the LED 6. In this case, since the light-transmitting resin 8 is formed to have the minimum dimensions necessary for transmitting the light of the LED 6, the surface of the light-transmitting resin 8 is used to position the package structure. I can't do that! /, The case occurs.
- the lead frames 3 and 5 at least a part of a portion other than the portion where the light-transmitting resin 8 is disposed on the surface on which the light-transmitting resin 8 is disposed. Place a portion 2a of the low stress resin. By using the surface of the part 2a of the low-stress resin, it is possible to align the package structure with the equipment on which the package structure is to be mounted.
- a pin or the like is arranged at a position where the light-transmitting resin 8 is to be arranged, which is an optical path, and the low-stress resin is formed. You should block the inflow of resin material!
- the part 2a of the low-stress resin is formed by reducing the thickness of the base portion 8b of the light-transmitting resin 8 when the light-transmitting resin of the lead frames 3 and 5 is formed. It may be formed on the surface on the side where 8 is arranged! / ⁇ . Even if alignment is not possible with the base portion 8b of the thinly formed light-transmitting resin 8, the position of the package structure should be adjusted by the surface of the portion 2a of the low-stress resin. Can be. (Seventh embodiment)
- FIG. 8 is a cross-sectional view showing a package structure of the opto device according to the seventh embodiment of the present invention.
- the package structure of the opto device of the seventh embodiment differs from the knock structure of the opto device of the sixth embodiment only in that a crack prevention structure is different.
- the same components as those in the sixth embodiment are denoted by the same reference numerals, and a detailed description thereof will be omitted.
- the crack prevention structure provided in the package structure of the opto device of the seventh embodiment is such that the area of the light transmitting resin 8 is smaller than the area of the mounting portion 5 of the lead frame when viewed from the light emitting direction of the LED 6.
- the light transmitting resin 8 is bonded to at least the mounting portion 5 of the lead frame with an adhesive.
- the light-transmitting resin 8 is formed of a lens portion 8a and a base portion 8b that supports the lens portion 8a. Below the base portion 8b, at least the mounting portion 5 of the lead frame is bonded with an adhesive. Glued.
- the light-transmitting resin 8 may be subjected to stress due to molding shrinkage or curing of the light-transmitting resin. Temperature force at start Residual stress is generated due to thermal stress due to temperature difference up to ambient temperature. This residual stress contributes to the generation of cracks in the light transmitting resin 8.
- the light-transmitting resin 8 is formed separately from the lead frames 3 and 5, and the light-transmitting resin 8 is bonded at least to the mounting portion of the lead frame with the adhesive 10. Fix to 5.
- the thermal stress caused by the temperature difference between the temperature at the start of curing of the adhesive material 10 and the ambient temperature causes the residual stress, and the possibility of cracks occurring in the light-transmitting resin 8 is reduced. Can be reduced.
- the adhesive 10 to function as a buffer for stress, the occurrence of cracks in the light-transmitting resin 8 can be effectively prevented.
- the adhesive 10 it is preferable to use a material having a glass transition point lower than the minimum storage temperature of the package of the opto device. This allows the adhesive 10 to be in a rubbery state in a normal environment using the opto device cage. As a result, the Young's modulus of the adhesive 10 can be reduced, so that the stress difference between the lead frames 3 and 5 to which the adhesive 10 is fixed and the light transmitting resin 8 is reduced. can do. Accordingly, stress concentration on the light transmitting resin 8 can be effectively prevented, and cracks can be effectively prevented.
- the adhesive 10 having a curing point equal to or higher than the minimum storage temperature of the knock of this opt device and equal to or lower than the maximum storage temperature, in the process of curing the adhesive 10, The temperature difference when reaching the ambient temperature can be reduced. Therefore, thermal stress generated when the adhesive 10 is cured can be reduced, and cracks in the light-transmitting resin 8 can be effectively prevented.
- the curing point of the adhesive 10 is preferably a value obtained by arithmetically averaging the values of the minimum storage temperature and the maximum storage temperature of the package of this opto-device.
- the method of forming the light-transmitting resin 8 is not particularly limited.
- the low-stress resin 2 seals the LED 6 and the wires 9 and the like, it is preferable to use transfer molding in order to reduce residual stress on these components.
- a releasing agent is not used in the low stress resin 2.
- a release agent is used for the low-stress resin, when the light-transmitting resin is molded after molding the low-stress resin, the release agent seeps out of the low-stress resin, and the low-stress resin and the light-transmitting resin are exuded. This is because the adhesiveness to the resin may be adversely affected.
- the LED 6 may be another opto-device such as a CCD, a VCSEL, and a PD.
- the shapes of the light-transmitting resin 8 and the low-stress resin 2 are not limited to rectangular parallelepipeds, and can be changed to other shapes as needed.
- the shape of the lead frame can be changed to another shape as needed.
- the mounting section 5 and the lead section 3 may be formed integrally, and the number of the lead section 3 may be any number.
- Table 3 shows the maximum value generated at the end 81 of the light-transmitting resin (same position as position B in Table 2) for the knock structure of the opto-devices of the fourth, fifth, and seventh embodiments described above. It is a table showing the result of having calculated shear stress by FEM simulation. In this FEM simulation, calculations were performed under the same conditions as in the FEM simulation for which the results in Table 2 were obtained. I got it. In the fifth embodiment, the calculation was performed for the light-transmitting resin 8 in which the plurality of lenses 8a and the base 8b were separated from each other, in addition to having the plurality of lenses 8a and the base 8b. .
- the package structure of the opto-device according to the fourth, fifth and seventh embodiments further reduces the shear stress of the permeable resin 8 as compared with the first embodiment. be able to. Therefore, it can be said that cracks in the light-transmitting resin 8 can be more effectively prevented.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US10/577,113 US7521782B2 (en) | 2003-11-06 | 2004-10-13 | Optical device package structure |
DE112004002138T DE112004002138B4 (de) | 2003-11-06 | 2004-10-13 | Optobauteil-Gehäusekonstruktion |
Applications Claiming Priority (4)
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JP2003-376967 | 2003-11-06 | ||
JP2003376967 | 2003-11-06 | ||
JP2004232371A JP2005159296A (ja) | 2003-11-06 | 2004-08-09 | オプトデバイスのパッケージ構造 |
JP2004-232371 | 2004-08-09 |
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WO2005045944A1 true WO2005045944A1 (ja) | 2005-05-19 |
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PCT/JP2004/015053 WO2005045944A1 (ja) | 2003-11-06 | 2004-10-13 | オプトデバイスのパッケージ構造 |
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US (1) | US7521782B2 (ja) |
JP (1) | JP2005159296A (ja) |
DE (1) | DE112004002138B4 (ja) |
WO (1) | WO2005045944A1 (ja) |
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JP4181515B2 (ja) * | 2004-02-25 | 2008-11-19 | シャープ株式会社 | 光半導体装置およびそれを用いた電子機器 |
JP2007324213A (ja) * | 2006-05-30 | 2007-12-13 | Stanley Electric Co Ltd | 半導体表示装置 |
US7909482B2 (en) * | 2006-08-21 | 2011-03-22 | Innotec Corporation | Electrical device having boardless electrical component mounting arrangement |
TW201448263A (zh) | 2006-12-11 | 2014-12-16 | Univ California | 透明發光二極體 |
US8408773B2 (en) * | 2007-03-19 | 2013-04-02 | Innotec Corporation | Light for vehicles |
US7712933B2 (en) * | 2007-03-19 | 2010-05-11 | Interlum, Llc | Light for vehicles |
KR100855065B1 (ko) * | 2007-04-24 | 2008-08-29 | 삼성전기주식회사 | 발광 다이오드 패키지 |
JP2008300554A (ja) * | 2007-05-30 | 2008-12-11 | Nec Electronics Corp | 半導体装置 |
TW200903834A (en) * | 2007-07-05 | 2009-01-16 | Bright Led Electronics Corp | High heat-dissipation light emitting diode device |
EP2232592B1 (en) | 2007-12-12 | 2013-07-17 | Innotec Corporation | Method for overmolding a circuit board |
JP5463447B2 (ja) * | 2008-01-18 | 2014-04-09 | 三洋電機株式会社 | 発光装置及びそれを備えた灯具 |
JP4531830B2 (ja) * | 2008-08-15 | 2010-08-25 | 特新光電科技股▲分▼有限公司 | Ledリードフレームの製造方法 |
WO2010095760A2 (en) * | 2009-02-19 | 2010-08-26 | Sumitomo Electric Industries, Ltd. | Optical module enclosing lead frame and semiconductor optical device mounted on the lead frame with transparaent mold resin |
DE102009012517A1 (de) * | 2009-03-10 | 2010-09-16 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
TWI411142B (zh) * | 2009-06-23 | 2013-10-01 | Delta Electronics Inc | 發光裝置及其封裝方法 |
KR101423454B1 (ko) | 2009-12-29 | 2014-07-25 | 서울반도체 주식회사 | 발광 다이오드 패키지 |
US9425372B2 (en) * | 2010-01-29 | 2016-08-23 | Japan Aviation Electronics Industry, Limited | LED device, method of manufacturing the same, and light-emitting apparatus |
JP5528900B2 (ja) | 2010-04-30 | 2014-06-25 | ローム株式会社 | 発光素子モジュール |
KR101114719B1 (ko) | 2010-08-09 | 2012-02-29 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 조명 시스템 |
EP2677539B1 (en) * | 2011-02-15 | 2017-07-05 | Panasonic Intellectual Property Management Co., Ltd. | Process for manufacture of a semiconductor device |
WO2013132389A1 (en) * | 2012-03-06 | 2013-09-12 | Koninklijke Philips N.V. | Lighting module and method of manufacturing a lighting module |
US9022631B2 (en) | 2012-06-13 | 2015-05-05 | Innotec Corp. | Flexible light pipe |
US9176260B2 (en) | 2013-02-26 | 2015-11-03 | Sur-Seal Corporation | LED lens assembly |
JP2014187323A (ja) * | 2013-03-25 | 2014-10-02 | Toshiba Corp | 半導体発光装置 |
JP6323217B2 (ja) * | 2013-07-10 | 2018-05-16 | 日亜化学工業株式会社 | 発光装置 |
DE102013110733A1 (de) * | 2013-09-27 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
DE102016106270A1 (de) * | 2016-04-06 | 2017-10-12 | Osram Opto Semiconductors Gmbh | Herstellung eines halbleiterbauelements |
US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
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- 2004-10-13 US US10/577,113 patent/US7521782B2/en not_active Expired - Fee Related
- 2004-10-13 DE DE112004002138T patent/DE112004002138B4/de not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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DE112004002138T5 (de) | 2008-01-03 |
US20070080357A1 (en) | 2007-04-12 |
DE112004002138B4 (de) | 2011-06-09 |
US7521782B2 (en) | 2009-04-21 |
JP2005159296A (ja) | 2005-06-16 |
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