WO2005038919A1 - パワー半導体モジュール及びそれを用いた電力変換装置並びに移動体 - Google Patents
パワー半導体モジュール及びそれを用いた電力変換装置並びに移動体 Download PDFInfo
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- WO2005038919A1 WO2005038919A1 PCT/JP2004/012702 JP2004012702W WO2005038919A1 WO 2005038919 A1 WO2005038919 A1 WO 2005038919A1 JP 2004012702 W JP2004012702 W JP 2004012702W WO 2005038919 A1 WO2005038919 A1 WO 2005038919A1
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- power semiconductor
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- semiconductor module
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- power
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Definitions
- the present invention relates to a power semiconductor module using a semiconductor element, a power conversion device using the same, and a moving body.
- power converters composed of power semiconductor modules using power semiconductor elements can efficiently supply power to loads such as motors, so they are widely used for driving motors for moving objects such as trains and automobiles. Have been. In particular, it has recently been used to drive motors for restarting vehicles after idle stop to improve fuel efficiency for automobiles.
- Power semiconductor elements generate heat due to switching by the operation of the power converter and steady energization. For this reason, at the joint between dissimilar materials, for example, at the joint between a single semiconductor element made of single crystal silicon and a bonding wire made of aluminum, a strain due to thermal fatigue occurs due to a difference in linear expansion coefficient.
- conventional methods of controlling the operation with a small temperature rise, a configuration in which power semiconductor modules are connected in parallel to reduce the current density, a method of expanding the cooling capacity to reduce the temperature, and materials with low thermal resistance By increasing the temperature margin of the power semiconductor element and increasing the temperature margin by selecting materials, the life of the power module has been extended and its reliability has been improved.
- a temperature sensor such as a thermocouple is built in the power semiconductor module as described in Japanese Patent Application Laid-Open No. 7-149488. It is known that the change in thermal resistance due to the deterioration of each joint is grasped by the temperature monitor during use. Also, as described in Japanese Patent Application Laid-Open No. 8-2755586, a method of replacing the life with the number of times the switching operation is started and counting the number of times the operation is started to grasp the life is also known. I have. Furthermore, as described in Japanese Patent Application Laid-Open No. 2002-106168, a power semiconductor module is disclosed. A method is also known in which a temperature detector is attached to the fuel cell, the cumulative damage rate is calculated from the temperature rise during each operation, and the life is calculated. Disclosure of the invention
- An object of the present invention is to provide a power semiconductor device using a semiconductor device, a power conversion device using the semiconductor device, and a mobile body, which are small in size and capable of accurately detecting deterioration of a metal joint.
- the present invention relates to a power semiconductor module having a structure in which a surface of a power semiconductor element having an electrode on its surface and a metal plate for an electrode are metal-bonded. This is provided with a joint characteristic detecting means for detecting the characteristic of the joint.
- the joint characteristic detecting means uses a threshold value determined from a relationship between a rise in resistance or voltage due to deterioration of the joint and a life, to determine the characteristic of the joint. The deterioration is predicted.
- the metal bonding is performed by a metal wire.
- the apparatus further comprises a voltage terminal for detecting the characteristic of the joint of the metal joint by the joint characteristic detecting means.
- the present invention provides a power semiconductor module having a structure in which a surface of a power semiconductor element having an electrode on its surface and a metal plate for an electrode are metal-bonded. It is provided with a voltage terminal for detecting the characteristic.
- the present invention provides a power semiconductor module having a structure in which a surface of a power semiconductor element having an electrode on its surface and a metal plate for an electrode are metal-bonded,
- a power converter for performing DC-AC conversion comprising a joint characteristic detecting means for detecting a characteristic of a joint of the metal joint.
- the joint characteristic detecting means switches to operation control lower than the rated operation when approaching the life predicted based on the detected characteristic. It is.
- the present invention provides a power semiconductor module having a structure in which a surface of a power semiconductor element having electrodes on its surface and a metal plate for electrodes are metal-bonded, and
- a characteristic of the joint of the metal junction is detected. This is provided with a joint characteristic detecting means for performing the above.
- the moving body is operated in an idling stop operation mode in which the power is stopped when the moving body stops, and the power is started when the moving body starts.
- FIG. 1 is a circuit diagram of a power semiconductor module according to one embodiment of the present invention.
- FIG. 2 is a cross-sectional perspective view showing an external configuration of the power semiconductor module according to one embodiment of the present invention.
- FIG. 3 is a characteristic diagram of a joint detected by the joint characteristic detecting circuit 20 used in the power semiconductor module according to the embodiment of the present invention.
- FIG. 4 is a second circuit diagram of the power semiconductor module according to one embodiment of the present invention.
- FIG. 5 is a third circuit diagram of the power semiconductor module according to one embodiment of the present invention.
- FIG. 6 is a fourth circuit diagram of the power semiconductor module according to one embodiment of the present invention.
- FIG. 7 is a cross-sectional configuration diagram for explaining the principle in the case of detecting junction deterioration using the fourth circuit configuration of the power semiconductor module according to one embodiment of the present invention even by utilizing the temperature characteristics of the element.
- FIG. 8 is a characteristic diagram in the configuration of FIG.
- FIG. 9 is a detailed circuit diagram of the junction characteristic detection circuit 20B in the fourth circuit configuration of the power semiconductor module according to one embodiment of the present invention.
- FIG. 10 is a sectional perspective view showing an external configuration of a power semiconductor module according to another embodiment of the present invention.
- FIG. 11 is a cross-sectional perspective view showing an external configuration of a power semiconductor module according to another embodiment of the present invention.
- FIG. 12 is a circuit diagram of a power semiconductor module according to another embodiment of the present invention.
- FIG. 13 is a block diagram of a control system for a power semiconductor module according to an embodiment of the present invention.
- FIG. 14 is a flowchart showing the operation of the control system for a power semiconductor module according to one embodiment of the present invention.
- FIGS. 15A and 15B show a power semiconductor module according to an embodiment of the present invention.
- 5 is a time chart showing the operation of the control system.
- FIG. 16 is a circuit diagram of a power converter using a power semiconductor module according to one embodiment of the present invention.
- FIG. 17 is a system configuration diagram of a power converter using a power semiconductor module according to an embodiment of the present invention.
- FIG. 18 is a second circuit diagram of a power converter using a power semiconductor module according to one embodiment of the present invention.
- FIG. 19 is an explanatory view of the principle of life expectancy by a power converter using a power semiconductor module according to an embodiment of the present invention.
- FIG. 20 is a third circuit diagram of a power converter using a power semiconductor module according to one embodiment of the present invention.
- FIG. 21 is a block diagram of a moving object using the power converter according to one embodiment of the present invention.
- FIG. 22 is a block diagram of a moving object using the power converter according to one embodiment of the present invention.
- FIG. 1 is a circuit diagram of a power semiconductor module according to one embodiment of the present invention.
- the power semiconductor element 2 will be described using an IGBT as an example.
- the power semiconductor element 2 has an upper surface voltage terminal 11, a gate terminal 12, and a lower surface voltage terminal 13.
- the emitter of the power semiconductor element 2 is connected to the ground via a plurality of metal wires 8 and a metal plate 3, as described later with reference to FIG.
- the collector of power semiconductor element 2 is connected to lower surface voltage terminal 13 via solder.
- the emitter of the power semiconductor element 2 and the metal wire 8 are ultrasonically bonded, a plurality of first bonding portions are formed, and the metal wire 8 and the metal plate 3 are also ultrasonically bonded.
- the resistance R t8 indicates the resistance of these first and second junctions.
- the resistance R t9 indicates the resistance of the junction between the collector of the power semiconductor element 2 and the lower surface voltage terminal 13 by solder.
- the junction characteristic detection circuit 20 is connected to the upper surface voltage terminal 11 and the newly provided voltage terminal 10 and detects the voltage across the resistor Rt8.
- the junction characteristic detection circuit 20 detects the characteristic of the junction based on the detected voltage value or the resistance value obtained from the voltage value, and determines the life of the junction. The method for determining the life will be described later with reference to FIG.
- the result of the judgment is displayed on the display 30, and when the life of the joint is shortened, an alarm is issued by the alarm 32, and the characteristics and life of the joint are stored in the storage 34.
- the information stored in the storage unit 34 can be read from the outside by connecting the portable terminal 40.
- a power semiconductor module is used in an electric vehicle or the like, a power dealer's repair shop has a portable terminal 40, and by using the portable terminal 40, it is possible to use the portable terminal 40 to evaluate the life of the joint. Can be read.
- FIG. 2 is a cross-sectional perspective view showing an external configuration of the power semiconductor module according to one embodiment of the present invention.
- the same reference numerals as those in FIG. 1 indicate the same parts.
- the power semiconductor module 1 includes a power semiconductor element 2 having electrodes on its surface, a metal plate 3 for an external electrode, a metal plate 4 for heat dissipation, an insulating plate 5 having metal plating 6 on both sides and serving as an electrode, And an insulating resin structural material 7 for supporting the
- the lower surface of the power semiconductor element 2 is metal-bonded to a heat-dissipating metal plate 4 with a solder 9 via an insulating plate 5 in order to radiate heat generated during switching and steady energization.
- the upper surface of the semiconductor element 2 and the metal plate 3 for the external electrode are ultrasonically bonded by a plurality of metal wires 8.
- the metal plate 3 is grounded. As understood from the circuit diagram of FIG.
- a plurality of metal wires 8 are used as each voltage terminal.
- an upper surface voltage terminal 11, a gate terminal 12, and a lower surface voltage terminal 13 of the power semiconductor element are provided as each voltage terminal.
- the upper voltage terminal 11 is connected to the emitter electrode of the power semiconductor device 2.
- Gate terminal 12 is connected to the gate electrode of power semiconductor element 2.
- the bottom voltage terminals 13 Connected to the collector electrode of power semiconductor element 2.
- a plurality of first joints are formed between the emitter electrode of the power semiconductor element 2 and the metal wire 8
- a plurality of second joints are formed between the metal wire 8 and the metal plate 3.
- the combined resistance is the resistance R t8 shown in FIG.
- a junction is formed by the solder 9 that joins the collector electrode of the first semiconductor element 2 and the lower surface voltage terminal 13, and this resistance is the resistance Rt 9 shown in FIG.
- a voltage terminal 10 of an external electrode is newly provided in order to determine the degree of deterioration of the first joint.
- the power semiconductor element 2 generates heat when energized, and the temperature repeatedly rises and falls.
- the power semiconductor element 2 is mainly made of single crystal silicon and has a linear expansion coefficient of about 4.2 X 10-6 Z ° C, whereas the metal wire 8 is made of pure aluminum or several ppm.
- the coefficient of linear expansion is about 23 X 10-6 / ° C, which is about 5 times different. For this reason, a distortion due to a difference in linear expansion coefficient occurs due to long-term use, and a crack is generated and propagates at a joint portion of the metal wires 8 joined on the upper surface of the power semiconductor element 2.
- the bonding area of the metal wire 8 gradually decreases with long use, and the electrical resistance gradually increases at this portion. Then, as shown in FIG. 1, the voltage across the first junction is measured using the voltage terminal 10 and the upper surface terminal 11. Similarly, the electrical resistance of the solder 9 at the lower surface gradually increases. Therefore, the deterioration of the joint can be determined also from the resistance of the joint of the solder 9.
- the IGBT is used as an example of the power semiconductor element 2.
- FIG. 3 is a characteristic diagram of a joint detected by the joint characteristic detecting circuit 20 used in the power semiconductor module according to the embodiment of the present invention.
- the horizontal axis indicates the number of times of durability, that is, the number of times of switching of the power semiconductor element.
- the vertical axis indicates the junction voltage detected by the junction characteristic detection circuit 20. Since the current flowing through the junction can be detected, The resistance at the junction may be used.
- the junction voltage gradually increases as the number of endurance increases. Due to the long-term use of the power semiconductor element, distortion occurs due to a difference in linear expansion coefficient, and cracks are generated and propagated at the joint of the metal wires 8 joined on the upper surface of the power semiconductor element 2. Due to the cracks and propagation, the bonding area of the metal wire 8 gradually decreases with long use, and the electrical resistance gradually increases in this portion. Among them, at points D l, D 2, and D 3, the curves showing the characteristics are bent, and the voltage value sharply increases at each point. This is because, as shown in FIG. 2, one or several places are cut out of the plurality of joints of the plurality of metal wires 8, and the emitter electrode of the power semiconductor element 2 and the metal plate 3 are connected. This indicates that the number of metal wires 8 to be connected has decreased and the combined resistance value of the metal wires 8 has sharply increased.
- the life of the semiconductor power module can be known.
- the resistance of the metal junction during the life is determined in advance by testing the resistance of the metal junction during the life or by calculating the area, and the resistance or voltage of the metal junction during the life with a design margin Determine the threshold of
- the threshold value VL is, for example, about lOOmV.
- the value of this threshold depends on the circuit configuration.
- the current life (current metal junction voltage V—initial metal junction voltage V 0) / (threshold value VL—initial metal junction voltage value V0) to calculate the life (%). Can be.
- the joint characteristic detection circuit 20 displays the determined life on the display 30.
- the junction characteristic detection circuit 20 outputs an alarm from the alarm device 32 when the detected voltage at the junction reaches the threshold value VL or approaches the threshold value VL.
- the junction characteristic detection circuit 20 determines the voltage value of the detected junction or the life of the determined junction. Is stored in the storage unit 34. The stored content can be read from the storage unit 34 by using the external terminal 40.
- FIG. 4 is a second circuit diagram of the power semiconductor module according to one embodiment of the present invention.
- the same reference numerals as those in FIG. 1 indicate the same parts.
- the junction characteristic detection circuit 2OA is connected to the lower surface voltage terminal 13 and the newly provided voltage terminal 10, and detects the voltage across the resistors Rt8 and Rt9. That is, the junction characteristic detection circuit 2OA monitors the resistance Rt8 of the junction of the metal wire 8 and the resistance Rt9 of the junction of the solder 9.
- the voltage of the first semiconductor element 2 is also included.
- the voltage of the first semiconductor element 2 changes depending on the temperature. Therefore, a temperature sensor 52 for detecting the temperature of the power semiconductor element 2 and a temperature correction circuit 5 for correcting the temperature characteristics of the power semiconductor element 2 based on the temperature of the power semiconductor element 2 detected by the temperature sensor 52 0 is provided.
- the junction characteristic detection circuit 2OA detects the characteristics of the junction based on the output of the temperature correction circuit 50, and determines the life of the junction and the like. The result of the judgment is output to the display 30, the alarm 32, and the storage 34, as shown in FIG.
- the measurement can be performed at almost the same temperature every time.
- the voltage can be measured by the resistance of. Therefore, if the measurement is performed at substantially the same temperature as immediately after energization, the temperature sensor 52 and the temperature correction circuit 50 become unnecessary.
- FIG. 5 is a third circuit diagram of the power semiconductor module according to one embodiment of the present invention.
- the same reference numerals as those in FIG. 1 indicate the same parts.
- the junction characteristic detecting circuit 2OA is connected to the lower surface voltage terminal 13 and the upper surface voltage terminal 11, and detects the voltage across the resistor Rt9. That is, the junction characteristic detection circuit 20 A monitors the resistance R t9 of the junction of the solder 9. However, in this case, since the voltage of the power semiconductor element 2 is also included, the temperature is corrected by the temperature sensor 52 and the temperature correction circuit 50. The junction characteristic detection circuit 2OA detects the characteristics of the junction based on the output of the temperature correction circuit 50, and determines the life of the junction and the like. The result of the determination is output to the display 30, the alarm 32, and the storage 34 as shown in FIG.
- FIG. 6 is a fourth circuit diagram of the power semiconductor module according to one embodiment of the present invention.
- FIG. 7 is a cross-sectional configuration diagram for explaining the principle in the case of detecting a junction deterioration using the fourth circuit configuration of the power semiconductor module according to the embodiment of the present invention even by utilizing the temperature characteristics of the element.
- FIG. 8 is a characteristic diagram in the configuration of FIG.
- FIG. 9 is a detailed circuit diagram of the junction characteristic detection circuit 20B in the fourth circuit configuration of the power semiconductor module according to the embodiment of the present invention.
- the same reference numerals as those in FIGS. 1 and 2 indicate the same parts.
- the power semiconductor element 2A shown in FIG. 6 a power MOS-FET is used. As shown in Fig. 8, the power MOS FET has the characteristic that the electrical resistance (or energizing voltage) increases as the temperature rises.
- the circuit configuration in FIG. 6 is basically the same as that shown in FIG. The configuration of the joint characteristic detection circuit 20B will be described later with reference to FIG.
- the electrical resistance R t 9 of the solder 9 when the solder joint deteriorates is the electrical resistance R t of the power M ⁇ SFET. Even if it is extremely small compared to 2, a voltage change occurs, and solder deterioration can be detected.
- the detection voltage detected by the junction characteristic detection circuit 20B is the sum of the resistance Rt9 at the junction of the solder 9 and the voltage generated at the resistance Rt2 of the power semiconductor element 2, but Rt9 In Rt2, the voltage is almost the same as that generated by the resistance Rt2 of the power semiconductor device.
- FIG. 7 (A) shows the state before deterioration
- FIG. 7 (B) shows the state after deterioration.
- the deterioration DTR of the solder 9 (9 A, 9 B) proceeds from the end of the solder 9 B on the lower surface side of the power semiconductor element 2, so that the thermal resistance increases at the end.
- a heat dissipating metal plate 4 serving as a cooling means is arranged, and since heat generated by the power semiconductor element 2 is dissipated from the heat dissipating metal plate 4, the surface of the power semiconductor element 2 There is a difference in heat radiation between the end and the center. Therefore, when the power semiconductor element has a characteristic that the resistance increases when the temperature rises, the resistance is large at the end where the temperature is high and the current is small. In other words, current sharing occurs in the direction in which the temperature difference is eliminated in the element surface, and in the direction in which the temperature becomes uniform. That is, as shown in FIG. 7 (B), the distribution of current vector IV after deterioration changes to a biased distribution with respect to the distribution of current vector IV before solder deterioration shown in FIG. 7 (A).
- the resistance R t2 has an inverse proportional relationship of R t2 oc1Z S to the element area S, and the resistance R t2 increases as the area S decreases.
- the conduction area of the power semiconductor element 2 is reduced, and the resistance R t of the power semiconductor element 2 is maintained even if the characteristics of the power semiconductor element 2 are not deteriorated. 2 increases. That is, in the voltage detection according to the present embodiment, an increase in the thermal resistance is detected by an increase in the resistance R t2, not an increase in the electric resistance of the solder.
- FIG. 8 the results of detection of solder deterioration during the solder deterioration test are shown using FIG.
- the horizontal axis represents the temperature of the power semiconductor element
- the vertical axis represents the detected resistance value.
- Solid line A shows the resistance characteristics of the power semiconductor element before degradation.
- the solid line B shows the resistance characteristics of the power semiconductor element in the deteriorated state for the six test numbers. It can be seen that the resistance of the solid line B is higher than that of the solid line A.
- the power semiconductor element has the temperature characteristic (the characteristic that the electric resistance increases as the temperature rises) and the heat generated by the power semiconductor element is radiated by the cooling means, the power semiconductor element is generated at the junction. Even if the voltage terminals are not arranged so that the voltage can be detected, the deterioration of the junction can be detected by detecting the voltage across the power semiconductor element.
- the junction characteristic detection circuit 20 B is composed of a voltage detection circuit 22 and an ohmmeter A calculation circuit 24, a deterioration calculation circuit 26, and a temperature characteristic reset circuit 28 are provided.
- the voltage detection circuit 22 includes a protection diode D1 and an AZD comparator AD1.
- the protection diode D1 is provided to protect the detection device from overvoltage.
- the voltages VI and V2 to be detected (voltages generated at the junction 9 and the power semiconductor element A) are converted into digital signals by the AZD converter AD1.
- the resistance calculation circuit 24 calculates the current resistance Rn from the voltage V3 between the terminals VI and V2 and the current value I input from the outside.
- As the current value I a current signal used in the motor control circuit may be used, or a current value measured by attaching a new current sensor may be used.
- the temperature correction circuit 50 Based on the element temperature Tj detected by the temperature sensor 52 with respect to the resistance value Rn calculated by the resistance calculation circuit 24, the temperature correction circuit 50 generates an initial voltage R0, when the power semiconductor element is at the temperature Tj. Outputs the expected life resistance RL.
- Power semiconductor devices such as MOS-FETs have the characteristic that the electrical resistance increases as the temperature rises, as shown by the initial R0 characteristic CR0.
- the resistance value as a whole increases with respect to the initial characteristics as shown in FIG.
- the degradation limit (lifetime) is assumed.
- the resistance RL during the lifetime is , Which is twice the initial value R0.
- the degradation limit (lifetime) is when the degradation DTR reaches 33% of the connection area due to the solder 9
- the resistance value RL during the lifetime is 1.5 times the initial value R0.
- the temperature correction circuit 50 has the predicted life RL characteristic C RL together with the initial R0 characteristic C R0.
- the temperature correction circuit 50 calculates the temperature of the power semiconductor element at the temperature Tj from the initial R0 characteristic CR0 and the element temperature Tj detected by the temperature sensor 52 with respect to the resistance value Rn calculated by the resistance calculation circuit 24.
- the resistance R0 calculated by the resistance calculation circuit 24 and the expected life RL characteristic C RL and the element temperature Tj detected by the temperature sensor 52 are used to calculate the power semiconductor element. Outputs the predicted life resistance RL when is the temperature T j.
- the temperature characteristic reset circuit 28 is used in the following cases. That is, the temperature characteristics of the initial resistance R 0 and the predicted life resistance RL stored in the temperature correction circuit 50 are determined by taking into consideration the variation of the power semiconductor element 2 and the bonding variation of the solder 9 when assembling the module. It is preferable to correct the initial value before shipping. Therefore, by inputting a reset signal Reset to the temperature characteristic reset circuit 29 before shipment, the temperature characteristic can be corrected.
- FIG. 10 is a sectional perspective view showing an external configuration of a power semiconductor module according to another embodiment of the present invention.
- the same reference numerals as those in FIG. 2 indicate the same parts.
- the upper surface of the power semiconductor element 2 and the metal plate 3 for external electrodes are ultrasonically bonded by a plurality of metal wires 8.
- the upper surface of the semiconductor chip 2 and the thin metal plate 3 for the external electrode are connected by a plate-shaped lead conductor 8A having good electrical conductivity such as copper.
- the solder 9 connects between the upper surface of the power semiconductor element 2 and the plate-shaped lead conductor 8A, and between the external electrode metal plate 3 and the plate-shaped lead conductor 8A. ing.
- the upper surface voltage terminal 11 and the lower surface voltage terminal 13 cannot detect the voltage generated at the connection between the thin metal plate 8A and the power semiconductor element 2.
- the increase in the total thermal resistance from the power semiconductor to the cooling section can be detected instead of the electrical resistance. Total deterioration can be detected.
- the voltage terminals may be arranged so as to include the connection between the thin metal plate 8A and the power semiconductor element 2.
- the power semiconductor element module for example, when the power semiconductor element module is used as an inverter for an electric vehicle or a hybrid vehicle, (At the first start, not after restarting after running), if there is almost no heat generation due to energization and the temperature is the same as the outside temperature, measurement can be performed at almost the same temperature every time. Voltage can be measured by the resistance of the metal joint. Therefore, if the measurement is performed at almost the same temperature as immediately after the power is turned on, the temperature sensor 52 and the temperature correction circuit 50 are not required.
- the result of the joint deterioration ratio is output using the deterioration calculation circuit 26, but a comparison circuit that outputs an error signal by comparing the resistance with a threshold value in advance. May be replaced by
- the current value is determined in advance, or if a constant current mechanism is mounted so that the junction voltage can always be captured with the same current value, the current value is not required and the voltage value can be processed as it is.
- the temperature correction circuit 50 can be eliminated. In this case, there is only a circuit for storing two values of the determined initial resistance R 0 and the predicted life resistance RL of the power semiconductor element.
- the present embodiment it is only necessary to provide an external terminal and measure the voltage of the junction, so that the device is small and the deterioration of the metal junction can be accurately detected.
- FIG. 11 is a cross-sectional perspective view showing an external configuration of a power semiconductor module according to another embodiment of the present invention.
- the same reference numerals as those in FIG. 2 indicate the same parts.
- This embodiment differs from the embodiment shown in FIG. 2 in that the voltage terminal 1 OA on the external electrode side is provided in the same shape as the electrodes 11, 12, 13 of the power semiconductor element. It is about time.
- Voltage terminal 1 OA is connected to external electrode 3 by metal wire 8B.
- FIG. 12 is a circuit diagram of a power semiconductor module according to another embodiment of the present invention.
- the same reference numerals as those in FIG. 1 indicate the same parts.
- the present embodiment is different from the embodiment shown in FIG. 1 in that the junction characteristic detection circuit 20 is connected to the upper surface voltage terminal 11 and the voltage terminal 1 OA, and the voltage across the resistor R t8. Is to detect The junction characteristic detection circuit 20 detects the characteristics of the junction based on the detected voltage value or the resistance value obtained from the voltage value, and determines the life of the junction. The judgment result is output to the display 30, the alarm 32, and the storage unit 34, as in FIG.
- the influence of the voltage generated by the external electrode 3 in FIG. 2 and the influence of the contact resistance of the voltage terminal 10 in FIG. 2 are excluded from the example shown in FIG. Voltage can be measured with high accuracy.
- the present embodiment it is only necessary to provide an external terminal and measure the voltage at the junction, so that the device is small and can accurately detect the deterioration of the metal junction. .
- FIG. 13 is a block diagram of a control system for a power semiconductor module according to an embodiment of the present invention.
- FIG. 14 is a flowchart showing the operation of the control system of the power semiconductor module according to one embodiment of the present invention.
- FIG. 15 is a timing chart showing the operation of the control system of the power semiconductor module according to one embodiment of the present invention. 6 and 9 indicate the same parts.
- the control unit (CU) 60 is a power semiconductor device 2
- An on / off control signal V12 is output to the gate terminal of A.
- the power semiconductor element 2A performs an on / off switching operation by the control signal VI2. Since the junction characteristic detection circuit 20C cannot detect the characteristics of the junction unless the power semiconductor element 2A is turned on, the switch circuit SW1 of the voltage detection circuit 22A is controlled by the control signal VSWG from the CU60. When the power semiconductor element 2A is turned on, the voltage VI and V2 are detected and the AZD converter A1 outputs the digital difference voltage V3.
- step sio the CU 60 determines whether the power semiconductor device 2A is in the ON state or the OFF state.
- the CU 60 outputs the control signal V12 for turning on and off the power semiconductor element 2A, and therefore determines whether the power semiconductor element 2A is on or off based on the state of the control signal V12. be able to.
- the CU 60 sets a delay time of the predetermined time td1, and after the elapse of the delay time td1, proceeds to step s30.
- step S30 the CU 60 turns on the control signal VSWG and closes the switch circuit SW1 to take in the voltages VI and V2. With this, the acquisition of the voltage signal can be started.
- FIG. 15 (A) shows the on / off state of the control signal VI2
- FIG. 15 (B) shows the on / off state of the control signal VSWG. Since a high-frequency oscillating voltage is generated immediately after the control signal VI 2 is turned on, an error occurs if a voltage signal is detected immediately after the control signal VI 2 is turned on. Therefore, a time delay t d 1 is given to the ON timing of the control signal VSWG with respect to the ON of the control signal V12.
- the time delay tdl is, for example, about 1-2 S.
- step 40 of FIG. 14 when the voltage capture in step s30 is completed, the CU 60 determines again whether the power semiconductor element 2A is in the on state or the off state. That is, in the example shown in FIG. 15 (B), if the voltage capture in step s30 ends at time t3, an error occurs if the control signal VI2 is off at this timing. There is fear. Therefore, in step 40, At the time when the voltage capture of step s30 is completed, the CU 60 determines again whether the power semiconductor element 2A is in the on state or the off state, and if the power semiconductor element 2A is in the on state at that time, the normal capture is performed.
- the process is terminated as a result of the completion, but when the power semiconductor element 2A is in the off state, the process returns to step si0 to take in the data again.
- the time required for capturing (time t2 to t3) is, for example, about 10 to 202 s.
- the current value is determined in advance, or if a constant current mechanism is installed so that the junction voltage can always be captured with the same current value, the current value is not required and the voltage value can be processed as it is.
- the temperature correction circuit 50 can be eliminated by always taking in the same temperature at the timing when the temperature of the power semiconductor element is determined in advance. In this case, there is only a circuit for storing two values of the determined initial resistance R 0 and the estimated life resistance RL of the power semiconductor element.
- FIG. 16 is a circuit diagram of a power converter using a power semiconductor module according to one embodiment of the present invention.
- FIG. 17 is a system configuration diagram of a power conversion device using a power semiconductor module according to one embodiment of the present invention.
- the power conversion device 16 when controlling the three-phase AC motor 17, includes six part semiconductor elements 2 a, 2 b, 2 c, 2 d, 2 e, and 2 f.
- the DC current of the battery 19 is converted to a three-phase AC current and supplied to the motor 17.
- the power semiconductor elements 2 a and 2 b generate a U-phase AC current
- the power semiconductor elements 2 c and 2 d generate a V-phase AC current
- the power semiconductor elements 2 e and 2 f generate Generates W-phase alternating current.
- the gate voltages of the power semiconductor elements 2a, 2b, 2c, 2d, 2e, and 2f are controlled by the control unit (MCU) 60, and the switching operation is performed.
- the capacitor 18 is used as a filter capacitor. It is.
- the upper power semiconductor elements 2a, 2c, 2e are connected to a high voltage, and the lower power semiconductor elements 2b, 2d, 2f are connected to ground.
- the power semiconductor modules 2 b, 2 d, and 2 connected to the ground that are easy to measure the voltage, take out the voltage at the metal junction of the power semiconductor element that has the highest temperature in the module.
- the voltage can be easily obtained without considering the high voltage.
- the lower power semiconductor elements 2 b and 2 f are disposed at both ends and thus have a relatively good heat radiation state, whereas the lower power semiconductor element 2 d at the center has a poor heat radiation state. High temperature easily. Therefore, the junction characteristic detection circuit 20 detects the voltage between both ends of the metal wire junction of the lower power semiconductor element 2d at the center by the configuration shown in FIG.
- the motor control unit 60 is a power semiconductor device that constitutes the power conversion device 16 in accordance with the output of a sensor 62 that detects an intention such as the degree of acceleration of the driver. Is driven by switching. As a result, the motor drive current supplied from the battery 19 to the motor 17 is controlled.
- the sensor 62 for example, an accelerator opening sensor is used.
- the junction characteristic detection circuit 20 detects the voltage across the resistance R t8 of the junction of the metal wire as the junction voltage V as shown in FIG. By monitoring the motor drive current I, the joint characteristic detection circuit 20 can determine the degree of deterioration based on the resistance value of the joint. The junction characteristic detection circuit 20 detects the characteristics of the junction based on the detected voltage value or the resistance value obtained from the voltage value, and determines the life of the junction. The result of the judgment is displayed on the display 30. When the life of the joint becomes short, an alarm is issued by the alarm 32, and the characteristics and life of the joint are stored in the memory 34. The information stored in the storage unit 34 can be read from the outside by connecting a portable terminal.
- FIG. 18 is a second circuit diagram of a power converter using a power semiconductor module according to one embodiment of the present invention.
- the same reference numerals as those in Fig. 16 indicate the same parts.
- the FIG. 19 is an explanatory view of the principle of life expectancy by a power converter using a power semiconductor module according to one embodiment of the present invention.
- a life prediction circuit 22 is provided. As shown in FIG. 18, in addition to the configuration shown in FIG. 16, a life prediction circuit 22 is provided. As shown in FIG. 19, the life prediction circuit 22 predicts the future life by linear approximation from the transition of the life so far. The prediction result is displayed on the display 30. The displayed content is, for example, "The life of this device is X years y months z days.” As a result, the user can grasp the life in time.
- FIG. 20 is a third circuit diagram of a power converter using a power semiconductor module according to one embodiment of the present invention.
- the same reference numerals as those in FIG. 16 indicate the same parts.
- the junction characteristic detection circuit 20B outputs a power save signal pS to the motor control unit 60 when the determined life of the semiconductor power module reaches a predetermined life.
- the motor control unit 60 reduces the current supplied to the motor 17 to reduce the output torque of the motor, and performs the power save operation.
- the life when outputting the power save signal is, for example, 95%.
- the power save signal is output, a message such as “current life x x%.
- FIG. 21 is a block diagram of a moving object using the power converter according to one embodiment of the present invention.
- the same reference numerals as those in FIG. 20 indicate the same parts.
- the moving body 70 is an electric vehicle such as an electric vehicle driven only by a motor 17 or a hybrid vehicle driven by a motor and an engine.
- the motor 17 is driven by the power conversion system shown in FIG. Junction characteristic detection circuit 2
- a message such as “Current life xx%. Power save operation is in progress. This makes it possible to know when to replace the power converter, thereby reducing costs and mounting it on a mobile object.
- it is effective as a power conversion device in a conduction mode, such as driving a motor for idling stop to improve fuel efficiency for automobiles.
- FIG. 22 is a block diagram of a moving object using the power converter according to one embodiment of the present invention.
- the same reference numerals as those in FIG. 21 indicate the same parts.
- This embodiment shows a case in which the present invention is applied to a hybrid vehicle having an engine 80 in addition to the motor 17.
- the front wheels are driven by the motor 17 and the rear wheels are driven by the engine 80.
- the rear wheels may be driven by the motor 17 and the front wheels may be driven by the engine 80, or the front wheels or the rear wheels may be driven by the motor 17 and the engine 80.
- the engine control unit (ECU) 70 determines the amount of fuel injected into the engine 80 according to the engine speed detected by the crank angle sensor 92 and the amount of intake air detected by the air flow sensor 93. And control the ignition timing.
- the ECU 70 detects, for example, that the brake pedal is being depressed by the brake pedal sensor 94 and that the vehicle speed sensor 95 detects that the vehicle speed is 0 km / h and the vehicle is stopped. When the conditions are satisfied, the engine 80 is stopped and the engine is idle-stopped. After that, when the brake pedal sensor 94 stops the brake depression and the accelerator pedal sensor 96 detects that the accelerator pedal is depressed, a motor drive command is issued to the MCU 60. Send. When the motor 17 is driven by the MCU 60, the moving object starts moving.
- the ECU 70 When the ECU 70 detects that the vehicle speed detected by the vehicle speed sensor 95 has become faster than 0 kmZh and the moving object has begun to move, the ECU 70 starts fuel injection control and ignition timing control, and the engine 80 Restart. As described above, at the time of idle stop, the moving body is started to be moved by the motor 17, and thereafter, the engine 70 is restarted. As described above, according to each embodiment of the present invention, deterioration of a metal joint is detected by its resistance rise or voltage rise, so that a power semiconductor module, a power converter using the same, an electric vehicle, etc. For this type of mobile, it is possible to reduce maintenance costs, increase the benefits of fuel economy and other benefits by reducing size and weight, and reduce damage caused by unexpected destruction. Industrial applicability
- the present invention it is possible to obtain a small-sized power semiconductor module using a semiconductor element capable of accurately detecting deterioration of a metal joint, a power converter using the same, and a moving body.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims
Priority Applications (1)
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JP2005514715A JP4450796B2 (ja) | 2003-10-15 | 2004-08-26 | 電力変換装置 |
Applications Claiming Priority (2)
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PCT/JP2003/013174 WO2005038918A1 (ja) | 2003-10-15 | 2003-10-15 | パワー半導体モジュール及びそれを用いた電力変換装置並びに移動体 |
JPPCT/JP03/13174 | 2003-10-15 |
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WO2005038919A1 true WO2005038919A1 (ja) | 2005-04-28 |
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PCT/JP2003/013174 WO2005038918A1 (ja) | 2003-10-15 | 2003-10-15 | パワー半導体モジュール及びそれを用いた電力変換装置並びに移動体 |
PCT/JP2004/012702 WO2005038919A1 (ja) | 2003-10-15 | 2004-08-26 | パワー半導体モジュール及びそれを用いた電力変換装置並びに移動体 |
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PCT/JP2003/013174 WO2005038918A1 (ja) | 2003-10-15 | 2003-10-15 | パワー半導体モジュール及びそれを用いた電力変換装置並びに移動体 |
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JP (2) | JPWO2005038918A1 (ja) |
AU (1) | AU2003304509A1 (ja) |
WO (2) | WO2005038918A1 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007049870A (ja) * | 2005-08-12 | 2007-02-22 | Fuji Electric Device Technology Co Ltd | 電力用半導体モジュール |
JP2007202280A (ja) * | 2006-01-25 | 2007-08-09 | Toyota Motor Corp | インバータモジュールの検査方法及び検査装置 |
JP2009022084A (ja) * | 2007-07-11 | 2009-01-29 | Fuji Electric Device Technology Co Ltd | 半導体装置の劣化保護方法 |
US8325452B2 (en) | 2007-08-06 | 2012-12-04 | Fuji Electric Co., Ltd. | Semiconductor device |
EP2546978A4 (en) * | 2010-03-10 | 2016-03-16 | Hitachi Ltd | POWER CONVERTER |
JP5893106B1 (ja) * | 2014-09-08 | 2016-03-23 | 三菱電機株式会社 | モータジェネレータ装置およびその制御方法 |
EP2302673A3 (de) * | 2009-09-28 | 2016-05-25 | SEMIKRON Elektronik GmbH & Co. KG | Halbleiteranordnung und Verfahren zur Ermittlung der Sperrschichttemperatur eines Halbleiterbauelements |
JP2017169145A (ja) * | 2016-03-17 | 2017-09-21 | 東京エレクトロンデバイス株式会社 | 半導体装置、メンテナンス装置、及びメンテナンス方法 |
JPWO2018211735A1 (ja) * | 2017-05-19 | 2020-01-23 | 三菱電機株式会社 | 半導体装置 |
US12000883B2 (en) | 2019-06-25 | 2024-06-04 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4920319B2 (ja) * | 2006-06-22 | 2012-04-18 | 三菱電機株式会社 | 半導体素子の寿命予測回路 |
JP6432126B2 (ja) * | 2013-11-08 | 2018-12-05 | 株式会社明電舎 | 半導体モジュールの検査方法及び半導体システム |
JP6550761B2 (ja) * | 2015-01-27 | 2019-07-31 | 日本電気株式会社 | 半導体集積回路の寿命予測装置 |
JP6029796B1 (ja) * | 2015-04-20 | 2016-11-24 | 三菱電機株式会社 | 電力変換装置 |
US10978364B2 (en) * | 2017-06-22 | 2021-04-13 | Mitsubishi Electric Corporation | Semiconductor module |
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JP3245985B2 (ja) * | 1992-08-20 | 2002-01-15 | 株式会社日立製作所 | 寿命診断機能を備えたインバータ装置 |
JPH09289777A (ja) * | 1996-04-22 | 1997-11-04 | Hitachi Ltd | 電力変換装置 |
JP3477002B2 (ja) * | 1996-08-12 | 2003-12-10 | 株式会社東芝 | 半導体装置 |
JP4594477B2 (ja) * | 2000-02-29 | 2010-12-08 | 三菱電機株式会社 | 電力半導体モジュール |
JP2002005989A (ja) * | 2000-06-20 | 2002-01-09 | Meidensha Corp | 電力用半導体素子の劣化判断方法 |
JP3808326B2 (ja) * | 2001-06-12 | 2006-08-09 | 三菱電機株式会社 | 電力変換装置 |
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2003
- 2003-10-15 AU AU2003304509A patent/AU2003304509A1/en not_active Abandoned
- 2003-10-15 JP JP2005509597A patent/JPWO2005038918A1/ja active Pending
- 2003-10-15 WO PCT/JP2003/013174 patent/WO2005038918A1/ja active Application Filing
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2004
- 2004-08-26 JP JP2005514715A patent/JP4450796B2/ja not_active Expired - Fee Related
- 2004-08-26 WO PCT/JP2004/012702 patent/WO2005038919A1/ja active Application Filing
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JPH0714948A (ja) * | 1993-06-15 | 1995-01-17 | Hitachi Ltd | パワー半導体モジュール |
JPH0851768A (ja) * | 1994-08-10 | 1996-02-20 | Meidensha Corp | パワースイッチング素子の寿命監視装置及び同寿命監視装置を有するパワースイッチング素子を用いた装置 |
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007049870A (ja) * | 2005-08-12 | 2007-02-22 | Fuji Electric Device Technology Co Ltd | 電力用半導体モジュール |
JP2007202280A (ja) * | 2006-01-25 | 2007-08-09 | Toyota Motor Corp | インバータモジュールの検査方法及び検査装置 |
JP2009022084A (ja) * | 2007-07-11 | 2009-01-29 | Fuji Electric Device Technology Co Ltd | 半導体装置の劣化保護方法 |
US8325452B2 (en) | 2007-08-06 | 2012-12-04 | Fuji Electric Co., Ltd. | Semiconductor device |
EP2302673A3 (de) * | 2009-09-28 | 2016-05-25 | SEMIKRON Elektronik GmbH & Co. KG | Halbleiteranordnung und Verfahren zur Ermittlung der Sperrschichttemperatur eines Halbleiterbauelements |
EP2546978A4 (en) * | 2010-03-10 | 2016-03-16 | Hitachi Ltd | POWER CONVERTER |
JP5893106B1 (ja) * | 2014-09-08 | 2016-03-23 | 三菱電機株式会社 | モータジェネレータ装置およびその制御方法 |
JP2016059114A (ja) * | 2014-09-08 | 2016-04-21 | 三菱電機株式会社 | モータジェネレータ装置およびその制御方法 |
JP2017169145A (ja) * | 2016-03-17 | 2017-09-21 | 東京エレクトロンデバイス株式会社 | 半導体装置、メンテナンス装置、及びメンテナンス方法 |
JPWO2018211735A1 (ja) * | 2017-05-19 | 2020-01-23 | 三菱電機株式会社 | 半導体装置 |
US12000883B2 (en) | 2019-06-25 | 2024-06-04 | Mitsubishi Electric Corporation | Semiconductor device and power conversion device |
Also Published As
Publication number | Publication date |
---|---|
WO2005038918A1 (ja) | 2005-04-28 |
JPWO2005038918A1 (ja) | 2007-02-01 |
AU2003304509A1 (en) | 2005-05-05 |
JPWO2005038919A1 (ja) | 2007-02-08 |
JP4450796B2 (ja) | 2010-04-14 |
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