WO2005035688A1 - Abrasif pour le polissage chimique mecanique et procede de production associe - Google Patents
Abrasif pour le polissage chimique mecanique et procede de production associe Download PDFInfo
- Publication number
- WO2005035688A1 WO2005035688A1 PCT/KR2004/002584 KR2004002584W WO2005035688A1 WO 2005035688 A1 WO2005035688 A1 WO 2005035688A1 KR 2004002584 W KR2004002584 W KR 2004002584W WO 2005035688 A1 WO2005035688 A1 WO 2005035688A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- abrasive
- shell
- ceria
- silica
- mechanical polishing
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000126 substance Substances 0.000 title claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 102
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 70
- 239000002245 particle Substances 0.000 claims abstract description 69
- 239000002002 slurry Substances 0.000 claims abstract description 54
- 239000000725 suspension Substances 0.000 claims abstract description 49
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 239000007771 core particle Substances 0.000 claims abstract description 19
- 239000010420 shell particle Substances 0.000 claims abstract description 19
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 239000008119 colloidal silica Substances 0.000 claims abstract description 11
- 238000003756 stirring Methods 0.000 claims abstract description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 7
- HSJPMRKMPBAUAU-UHFFFAOYSA-N cerium(3+);trinitrate Chemical compound [Ce+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O HSJPMRKMPBAUAU-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 238000005406 washing Methods 0.000 claims abstract description 6
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 2
- 238000010335 hydrothermal treatment Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000001788 irregular Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011268 mixed slurry Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010530 solution phase reaction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
- C09K3/1445—Composite particles, e.g. coated particles the coating consisting exclusively of metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Definitions
- This invention relates to an abrasive for chemical mechanical polishing (CMP) and a method for producing the same. More particularly, this invention relates to an abrasive for CMP which is produced by hydrothermally treating a ceria particle coated silica.
- the abrasive includes a silica core, the first shell for coating the silica core, and the second shell for coating the first shell, wherein the first shell is made of ceria particles and the second shell is made of silica.
- One of the effective and widely used global planarization techniques is a chemical mechanical polishing (CMP) process, which performs the chemical polishing and the mechanical polishing simultaneously.
- CMP chemical mechanical polishing
- the CMP process is relatively simple, and the planarizing area of the CMP process is greater than that of other planarization techniques by 100 to 1,000 times.
- the slurry useful for the CMP process includes metallic oxide abrasive, oxidizer, deionized water and various additives.
- Exemplary metallic oxide abrasive includes silica (SiO ), aluminum oxide (Al O ), ceria (CeO ), 2 2 3 2 zirconia (ZO ), or so on.
- the silica is widely used as the metallic oxide abrasive 2 because it is commercially available and inexpensive.
- the silica in case of using the silica, serious contamination of semiconductor can be avoided since the material for forming an insulating layer of a semiconductor is SiO . Ifcwever, in case of using the 2 silica, the removal (polishing) rate is not satisfactory, and the selectivity of SiO layer 2 and Si N layer is not satisfactory, for example, in shallow trench isolation (STI) 3 4 process.
- STI shallow trench isolation
- Ceria abrasive has been used in polishing a glass lens, and the slurry including the ceria abrasive has the removal rate which is 3 to 4 times faster than the slurry including the silica abrasive, and also shows high removal rate in neutral solution.
- H)wever the ceria abrasive is expensive, has irregular shapes and sizes, and is liable to be aggregated.
- the slurry including the ceria abrasive has drawbacks in that the wafer can be scratched in the polishing process, and degree of the planarization of the wafer decreases.
- the Haymaker constant which represents the attractive force between particles, of the ceria abrasive is 27.7, which is greater than that of silica (5.99) and aluminum oxide (15.4). Therefore, when the size of the ceria particles increases, the repulsive power between particles and the dispersibility of the ceria particles decrease, which results in the high possibility of abrasive aggregation and precipitation.
- U.S. patent publication No. 2002-95873 titled Aqueous dispersions, process for their production, and their use, discloses alkaline treated silica abrasive having average particle size of less than lOOnm
- U.S. patent No. 6,328,944 titled Doped, pyrogenically prepared oxides, discloses oxides of metals and/or non-metals which are doped with one or more doping components such as a metal, a non-metal, or an oxide and/or a salt of a metal and/or a non-metal.
- 10-2003-0017352 titled Polishing composition comprising silica-coated ceria powder, discloses a ceria abrasive having improved stability.
- the abrasive is also not uniform in their particle sizes and shapes. Therefore, the abrasive and the slurry flow irregularly in polishing process, and the contacts between an abrasive pad, a wafer and an abrasive are also irregular, which may result in the irregular polishing of a wafer.
- the present inventors have prepared an abrasive for CMP by coating ceria particles on colloidal silica sol in solution state.
- the abrasive has uniform sizes and shapes, and the slurry including the same has better removal rate and the scratch formation is suppressed.
- the slurry including such abrasive is unstable, and liable to be aggregated and precipitated in neutral solvent, especially when pH is more than 4.
- particle aggregation also occurs when heating amorphous ceria hydroxide to produce crystalline ceria particles coated on the silica sol.
- an object of the present invention to provide an abrasive for CMP having improved polishing rate and stability at wide pH range, and suitable for long- term storage. It is other object of the present invention to provide an abrasive for CMP having regular particle sizes and shapes and capable of being uniformly dispersed in a solvent without aggregation. It is another object of the present invention to provide an abrasive for CMP capable of improving the degree of planarization of wafer, and for producing a polished surface having fewer defects and scratches. It is yet another object of the present invention to provide an abrasive for CMP which is inexpensive. It is yet another object of the present invention to provide a method for producing an abrasive for CMP which can be mass-produced by relatively simple processes.
- the present invention provides an abrasive for CMP comprising a silica core, the first shell for coating the silica core, and the second shell for coating the first shell, wherein the first shell is made of ceria particles and the second shell is made of silica particles.
- the second shell is produced by hydrothermally treating the ceria particle coated silica core.
- the present invention also provides a method for producing an abrasive for CMP which comprises the steps of: (a) preparing ceria particle suspension by mixing aqueous ammonia and aqueous cerous nitrate solution and stirring the solution; (b) preparing core/shell particles by adding colloidal silica slurry into the prepared ceria particle suspension and stirring the suspension; (c) washing the suspension; and (d) hydrothermally treating the washed suspension.
- FIG. 1 is a diagram for illustrating a method for producing an abrasive for CMP according to an embodiment of the present invention
- FIG. 2 is a diagram for illustrating a method for producing an abrasive for CMP according to other embodiment of the present invention
- FIG. 3 shows TEM photographs before and after hydrothermally treating core/shell particles
- Fig. 4 is a graph showing Zeta potential changes of the slurry including core/shell particle with respect to pH variation before and after the hydrothermal treatment.
- Fig. 5 shows XRD graphs of the core/shell particle before and after the hydrothermal treatment.
- the abrasive for CMP according to the present invention comprises a silica core, the first shell for coating the silica core, and the second shell for coating the first shell.
- the first shell is made of ceria particles.
- 5 to 30 weight parts of ceria particles is uniformly coated on the 100 weight parts of the silica core.
- the preferable amount of ceria particles is about 30 weight parts based on 100 weight parts of the silica core.
- the preferable amount of ceria particles is about 5 weight parts based on 100 weight parts of the silica core.
- the silica core useful in this invention is uniform colloidal silica having a spherical shape and a diameter of preferably 20 to 400 nm, and more preferably 100 to 400nm.
- the ceria particles coated on the silica core preferably have crystalline structure and sizes of 5 to 20nm.
- the ceria particles are uniformly coated on the silica core without aggregation to form uniform abrasive particles.
- the ceria particles coated silica core is called as core/shell particle.
- the core/shell particle is hydrothermally treated to form the second shell on the surface of the core/shell particle.
- the second shell is made of silica particles and has the thickness of less than 2nm, preferably 0.01 to 2nm, and more preferably 0.1 to 2nm. When the thickness of the second shells is less than 1 nm, the removal rate increase, but when the thickness of the second shells is more than 2 nm, the removal rate decrease.
- the size of the abrasive for CMP according to the present invention is preferably about 50 to 500nm, and more preferably about 100 to 300 nm. When the size of the abrasive is less than 50nm, the stability of the abrasive increases but the removal rate decrease. On the contrary, when the size of the abrasive is more than 500nm, the stability of the abrasive decrease.
- FIG. 1 is a diagram for illustrating a method for producing an abrasive for CMP according to an embodiment of the present invention. As shown in Fig.
- the method for producing an abrasive for CMP includes the steps of: (a) preparing ceria particle suspension by mixing aqueous ammonia and aqueous cerous nitrate solution and stirring the solution; (b) preparing core/shell particles by adding colloidal silica slurry into the prepared ceria particle suspension and stirring the suspension; (c) washing the suspension preferably before or after centrifuging and/or filtering the stined suspension to remove excess salt in the suspension; and (d) hydrothermally treating the washed suspension.
- 300m£ of 0.2M aqueous ammonia is added into 200 mil of 0.2M aqueous cerous nitrate solution, and the solution is stined at the temperature of 80 to 100°C to prepare suspension including ceria particles having the sizes of 5 to 20nm.
- colloidal silica slurry is added into the prepared ceria particle suspension.
- the colloidal silica slurry includes spherical silica particles of uniform size, and the preferable amount of the solid particles is 5g.
- the suspension is stined for about 2 hours to produce core/shell particles, which comprise silica core and ceria particles uniformly coated on the silica core.
- the washed suspension is hydrothermally treated in an auto-clave at the temperature of 100 to 350°C for more than 30 minutes, and preferably 30 minutes to 2 hours to produce silica coated core/shell particles.
- the preferable pH of the washed suspension is 3.0 to 4.0, and more preferably 3.5 to 3.9. When the pH is less than 3.0, or the pH is more than 4.0, the suspension is liable to be unstable.
- the Zeta potential change before the hydrothermal treatment is similar with that of the ceria particle, but the Zeta potential change after the hydrothermal treatment is similar with that of the silica sol, and the IEP (Isoelectric Point) was about 2. Therefore, it is confirmed that silica layer was formed on the surface of the core/shell particle by the hydrothermal treatment.
- the XRD peak of the solid particles before and after the hydrothermal treatment are set forth in upper part of Fig. 5. After the hydrothermal treatment, the full width at half maximum decreases, which means that the crystalline size of particle increases.
- Fig. 2 is a diagram for illustrating a method for producing an abrasive for CMP according to other embodiment of the present invention.
- the method for producing an abrasive for CMP includes the steps of: (a) preparing a suspension including silica on which ceria particles are electrostatically coated by mixing silica sol and ceria sol; and (b) hydrothermally treating the suspension.
- the ceria sol includes ceria particles having the sizes of 5 to 20nm.
- the hydrothermally treated slurry is centrifuged and/or filtered to remove the silica particle not coated with ceria particles.
- the Zeta potentials of the slurry before and after the hydrothermal treatment were measured as previously described, and the results were similar as shown in Fig. 4.
- the X-ray diffractions of the solid particles before and after the hydrothermal treatment are also set forth in lower part of Fig. 5, which confirms the crystalline size of the particle increases after the hydrothermal treatment.
- the first shell namely the ceria particles
- the first shell can also be coated on the silica core by a chemical vapor deposition (CVD), but the preferable coating method is the previously described solution phase reaction.
- the pH of the slurry including the abrasive of the present invention is important for abrasive dispersion, and the preferable pH of the slurry is 2 to 10, and more preferably 4 to 9.
- the surface of the abrasive is electrically charged, and the magnitude and type (positive or negative) of the charge depend on the pH of the slurry.
- the Zeta potential of the abrasive of the present invention decreases as the pH increases, and has (-) value when the pH of the slurry is more than 2.
- the silica abrasive when the pH is more than 2, the silica abrasive can be uniformed dispersed due to the electrostatic repulsion.
- the pH when the pH is more than 10, the silica coated on the ceria and the silica core can be dissolved to form silicate, and the ceria particles can be separated from the silica, which may decrease the polishing efficiency of the slurry.
- the washed slurry was hydrothermally treated in an auto-clave at the temperature of 150 °C for 1 hour.
- the obtained slurry was dispersed in water with supersonic wave to produce polishing slurry of pH 6.0 and having the abrasive concentration of 1 weight%.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030070684A KR100574225B1 (ko) | 2003-10-10 | 2003-10-10 | 실리카에 세리아/실리카가 코팅된 화학적 기계적 연마용연마재 및 그 제조방법 |
KR10-2003-0070684 | 2003-10-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005035688A1 true WO2005035688A1 (fr) | 2005-04-21 |
Family
ID=34431688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2004/002584 WO2005035688A1 (fr) | 2003-10-10 | 2004-10-09 | Abrasif pour le polissage chimique mecanique et procede de production associe |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100574225B1 (fr) |
TW (1) | TWI265193B (fr) |
WO (1) | WO2005035688A1 (fr) |
Cited By (30)
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WO2010139603A1 (fr) | 2009-06-05 | 2010-12-09 | Basf Se | Nanostructures d'oxyde de métal de type framboise enrobées avec des nanoparticules de ceo2 pour la planarisation chimique-mécanique (cmp) |
EP2428541A1 (fr) | 2010-09-08 | 2012-03-14 | Basf Se | Composition aqueuse de polissage et procédé de polissage mécanique chimique de substrats contenant des films diélectriques en oxyde de silicium et polysilicone |
WO2012032466A1 (fr) | 2010-09-08 | 2012-03-15 | Basf Se | Compositions de polissage aqueuses contenant des dioxydes de diazénium n-substitués et/ou des sels d'oxyde de n'-hydroxy-diazénium |
WO2012032469A1 (fr) | 2010-09-08 | 2012-03-15 | Basf Se | Composition aqueuse de polissage et procédé de polissage chimico-mécanique de matériaux de substrat pour dispositifs optiques, mécaniques et électriques |
CN102653633A (zh) * | 2011-03-03 | 2012-09-05 | 台湾永光化学工业股份有限公司 | 蓝色、红色及黄色染料化合物及所组成的黑色墨水组合物 |
WO2014038536A1 (fr) * | 2012-09-05 | 2014-03-13 | コニカミノルタ株式会社 | Procédé de production de particules de matériau de polissage |
WO2014045939A1 (fr) * | 2012-09-19 | 2014-03-27 | コニカミノルタ株式会社 | Procédé de production de particules de matière de polissage |
CN103814102A (zh) * | 2011-09-20 | 2014-05-21 | 堺化学工业株式会社 | 玻璃研磨用复合颗粒 |
WO2014122976A1 (fr) * | 2013-02-05 | 2014-08-14 | コニカミノルタ株式会社 | Suspension de matériau de polissage |
WO2014122992A1 (fr) * | 2013-02-05 | 2014-08-14 | コニカミノルタ株式会社 | Particules inorganiques de type cœur/coquille |
WO2014122982A1 (fr) * | 2013-02-05 | 2014-08-14 | コニカミノルタ株式会社 | Suspension de polissage |
WO2014122978A1 (fr) * | 2013-02-05 | 2014-08-14 | コニカミノルタ株式会社 | Procédé pour la production d'abrasif |
EP2826827A1 (fr) | 2013-07-18 | 2015-01-21 | Basf Se | Composition CMP comprenant des particules abrasives à cérium |
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JPWO2016159167A1 (ja) * | 2015-03-31 | 2018-03-29 | 日揮触媒化成株式会社 | シリカ系複合微粒子分散液、その製造方法及びシリカ系複合微粒子分散液を含む研磨用スラリー |
JP2018101693A (ja) * | 2016-12-20 | 2018-06-28 | 花王株式会社 | 研磨液組成物 |
JP2018168063A (ja) * | 2018-07-12 | 2018-11-01 | 日揮触媒化成株式会社 | シリカ系複合粒子分散液の製造方法 |
CN109155246A (zh) * | 2016-04-22 | 2019-01-04 | 日挥触媒化成株式会社 | 二氧化硅系复合微粒分散液及其制造方法 |
EP3476910A1 (fr) | 2017-10-27 | 2019-05-01 | Versum Materials US, LLC | Particules composites, procédé de raffinage et utilisation associée |
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JP2019172533A (ja) * | 2018-03-29 | 2019-10-10 | 日揮触媒化成株式会社 | セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液 |
EP3608378A1 (fr) | 2018-08-09 | 2020-02-12 | Versum Materials US, LLC | Composition de planarisation mécanique et chimique pour polir des matériaux d'oxyde et procédé d'utilisation associé |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100614218B1 (ko) * | 2004-06-21 | 2006-08-21 | 고려대학교 산학협력단 | Rf 플라즈마를 이용하여 이산화규소 나노 입자상에 이산화세륨을 박막증착시키는 방법 및 이로부터 제조된 연마입자 |
KR101279970B1 (ko) * | 2008-12-31 | 2013-07-05 | 제일모직주식회사 | 금속 배선 연마용 cmp 슬러리 조성물 |
TWI444437B (zh) | 2010-06-18 | 2014-07-11 | Everlight Chem Ind Corp | 藍色、紅色及黃色染料化合物及所組成之黑色墨水組成物 |
CN106675519A (zh) * | 2016-12-21 | 2017-05-17 | 安徽中创电子信息材料有限公司 | 一种无机复合磨料及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0280309A (ja) * | 1988-09-14 | 1990-03-20 | Toshiba Ceramics Co Ltd | α型窒化けい素粉末の製造方法 |
WO1995013251A1 (fr) * | 1993-11-12 | 1995-05-18 | Minnesota Mining And Manufacturing Company | Grain abrasif et son procede de fabrication |
US5429647A (en) * | 1992-09-25 | 1995-07-04 | Minnesota Mining And Manufacturing Company | Method for making abrasive grain containing alumina and ceria |
US5855841A (en) * | 1991-12-23 | 1999-01-05 | Commonwealth Scientific And Industrial Research Organisation | Process for producing dense ceramic product |
US6645265B1 (en) * | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
-
2003
- 2003-10-10 KR KR1020030070684A patent/KR100574225B1/ko active IP Right Grant
-
2004
- 2004-10-09 WO PCT/KR2004/002584 patent/WO2005035688A1/fr active Application Filing
- 2004-10-11 TW TW093130784A patent/TWI265193B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0280309A (ja) * | 1988-09-14 | 1990-03-20 | Toshiba Ceramics Co Ltd | α型窒化けい素粉末の製造方法 |
US5855841A (en) * | 1991-12-23 | 1999-01-05 | Commonwealth Scientific And Industrial Research Organisation | Process for producing dense ceramic product |
US5429647A (en) * | 1992-09-25 | 1995-07-04 | Minnesota Mining And Manufacturing Company | Method for making abrasive grain containing alumina and ceria |
WO1995013251A1 (fr) * | 1993-11-12 | 1995-05-18 | Minnesota Mining And Manufacturing Company | Grain abrasif et son procede de fabrication |
US6645265B1 (en) * | 2002-07-19 | 2003-11-11 | Saint-Gobain Ceramics And Plastics, Inc. | Polishing formulations for SiO2-based substrates |
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Also Published As
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KR100574225B1 (ko) | 2006-04-26 |
TW200521215A (en) | 2005-07-01 |
TWI265193B (en) | 2006-11-01 |
KR20050034913A (ko) | 2005-04-15 |
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