WO2004109840A1 - 電極およびその形成方法ならびに光電変換素子およびその製造方法ならびに電子装置およびその製造方法 - Google Patents
電極およびその形成方法ならびに光電変換素子およびその製造方法ならびに電子装置およびその製造方法 Download PDFInfo
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- WO2004109840A1 WO2004109840A1 PCT/JP2004/007559 JP2004007559W WO2004109840A1 WO 2004109840 A1 WO2004109840 A1 WO 2004109840A1 JP 2004007559 W JP2004007559 W JP 2004007559W WO 2004109840 A1 WO2004109840 A1 WO 2004109840A1
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- Prior art keywords
- electrode
- carbon
- metal
- binder
- photoelectric conversion
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- 239000002116 nanohorn Substances 0.000 description 1
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- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical class C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Substances OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
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- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
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- 229920002492 poly(sulfone) Polymers 0.000 description 1
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- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
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- 229920000098 polyolefin Polymers 0.000 description 1
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- 229920001155 polypropylene Polymers 0.000 description 1
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- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000002577 pseudohalo group Chemical group 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
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- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 1
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- 238000005096 rolling process Methods 0.000 description 1
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- 229940081623 rose bengal Drugs 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 150000003388 sodium compounds Chemical class 0.000 description 1
- 235000009518 sodium iodide Nutrition 0.000 description 1
- HYHCSLBZRBJJCH-UHFFFAOYSA-N sodium polysulfide Chemical compound [Na+].S HYHCSLBZRBJJCH-UHFFFAOYSA-N 0.000 description 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 1
- 235000019345 sodium thiosulphate Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 1
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- 229920003249 vinylidene fluoride hexafluoropropylene elastomer Polymers 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000001018 xanthene dye Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- A61K47/50—Medicinal preparations characterised by the non-active ingredients used, e.g. carriers or inert additives; Targeting or modifying agents chemically bound to the active ingredient the non-active ingredient being chemically bound to the active ingredient, e.g. polymer-drug conjugates
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- A61K47/6889—Conjugates wherein the antibody being the modifying agent and wherein the linker, binder or spacer confers particular properties to the conjugates, e.g. peptidic enzyme-labile linkers or acid-labile linkers, providing for an acid-labile immuno conjugate wherein the drug may be released from its antibody conjugated part in an acidic, e.g. tumoural or environment
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- C07K16/18—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans
- C07K16/28—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants
- C07K16/30—Immunoglobulins [IGs], e.g. monoclonal or polyclonal antibodies against material from animals or humans against receptors, cell surface antigens or cell surface determinants from tumour cells
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/86—Inert electrodes with catalytic activity, e.g. for fuel cells
- H01M4/90—Selection of catalytic material
- H01M4/92—Metals of platinum group
- H01M4/925—Metals of platinum group supported on carriers, e.g. powder carriers
- H01M4/926—Metals of platinum group supported on carriers, e.g. powder carriers on carbon or graphite
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- A—HUMAN NECESSITIES
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- A61K39/00—Medicinal preparations containing antigens or antibodies
- A61K2039/505—Medicinal preparations containing antigens or antibodies comprising antibodies
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- C—CHEMISTRY; METALLURGY
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- C07K—PEPTIDES
- C07K2317/00—Immunoglobulins specific features
- C07K2317/60—Immunoglobulins specific features characterized by non-natural combinations of immunoglobulin fragments
- C07K2317/62—Immunoglobulins specific features characterized by non-natural combinations of immunoglobulin fragments comprising only variable region components
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- C07K2317/80—Immunoglobulins specific features remaining in the (producing) cell, i.e. intracellular antibodies or intrabodies
- C07K2317/82—Immunoglobulins specific features remaining in the (producing) cell, i.e. intracellular antibodies or intrabodies functional in the cytoplasm, the inner aspect of the cell membrane, the nucleus or the mitochondria
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to an electrode, a method for forming the same, a photoelectric conversion element and a method for manufacturing the same, and an electronic device and a method for manufacturing the same.
- the present invention relates to an electrode, a method for forming the same, a photoelectric conversion element, a method for manufacturing the same, an electronic device, and a method for manufacturing the same.
- the present invention is suitably applied to a solar cell using a semiconductor electrode made of semiconductor fine particles.
- amorphous silicon solar cell Although the photoelectric conversion efficiency, which represents the performance of converting light (solar) energy to electrical energy, is higher than that of an amorphous silicon solar cell, much energy is required for crystal growth. Time was required, resulting in low productivity and disadvantageous cost.
- Amorphous silicon-based solar cells have characteristics such as higher light absorption, a wider range of substrate selection, and easier area enlargement than crystalline silicon-based solar cells. Lower than silicon-based solar cells.
- amorphous silicon solar cells have higher productivity than crystalline silicon solar cells, but, like crystalline silicon solar cells, require a vacuum process for manufacturing, and the burden on facilities is still large. No.
- the dye-sensitized solar cell announced in Nature 353, 737, (1991) has been shown to be able to achieve a high photoelectric conversion efficiency of 10% to date, and It is attracting attention because it can be manufactured at low cost.
- the general structure of a dye-sensitized solar cell is described in, for example, Japanese Patent Application Laid-Open No. 122080/1990.
- titanium oxide (T i 0 2) fine particles has been known a method for manufacturing a T i 0 2 paste, which is distributed ( "the latest technology of dye-sensitized solar cells” Arakawa Hiroshisoku (Shiemushi one) p. 45-47 (2001)).
- Pt has been mainly used as the counter electrode of the dye-sensitized solar cell, but the charge transfer speed on the Pt electrode is not always sufficient.
- the above-mentioned literature reports that a simple substance of carbon or a conductive polymer is used as a counter electrode. Not enough.
- the problem to be solved by the present invention is to provide an electrode having a higher charge transfer rate than Pt, simple carbon, a conductive polymer, and the like, a method of forming the electrode, a photoelectric conversion element using the electrode, and a method of manufacturing the same.
- Another object of the present invention is to provide an electronic device using the electrode and a method for manufacturing the same. Disclosure of the invention
- the present inventor conducted various experiments and studies in order to solve the above-mentioned problems of the prior art. As a result, in order to realize rapid charge transfer on the opposite electrode of a dye-sensitized solar cell, the present inventor has found out that The inventors have found that it is effective to use an electrode using a metal-supporting force-bonding electrode instead of a single element as the counter electrode, and have devised the present invention.
- a method for realizing rapid charge transfer a method using an electrode having a high specific surface area is known.
- the metal-supporting carbon used in the electrode according to the present invention can realize high-speed charge transfer due to the high specific surface area by using carbon and the catalytic effect of the metal supported as fine particles.
- iodine is specifically adsorbed to Pt and can realize rapid charge transfer. It is expected that electrodes with both Bon and Pt will achieve high-speed charge transfer.
- the present invention has been made based on the above study.
- a first invention of the present invention comprises a metal-supporting carbon and a binder.
- the second invention of the present invention is: A mixture of carbon carrying a metal and a binder is formed on a conductive substrate.
- the third invention of this invention is:
- a photoelectric conversion element using an electrode made of carbon carrying a metal and a binder is a photoelectric conversion element using an electrode made of carbon carrying a metal and a binder.
- the fourth invention of this invention is:
- a method for manufacturing a photoelectric conversion element characterized in that:
- the photoelectric conversion element is typically provided with a transparent conductive substrate and a counter electrode formed of the above-described electrode, facing each other, and having a semiconductor layer and an electrolyte layer therebetween. Is provided.
- This photoelectric conversion element is typically configured as a dye-sensitized solar cell.
- the photoelectric conversion element may be a solar cell other than the dye-sensitized solar cell or a photoelectric conversion element other than the solar cell.
- the form of the carbon for supporting the metal may be of various types, and specifically, needle-like carbon, fullerene, carbon nanotube (including carbon nanohorn), conductive carbon black (ketidine) Black (registered trademark) and acetylene black). These various forms of carbon may have even better effects by polymerizing or introducing functional groups.
- the specific surface area of the carbon is desirably large in order to improve the charge transfer speed on the electrode, both generally less 1 0 O m 2 / g or more, preferably 3 0 0 m 2 / g or more To be chosen. It is known that the surface area of an electrode manufactured using this carbon is 100 times or more the projected area.
- the particle size of this force is Generally, it is 10 O nm or less, but carbon having a larger particle diameter can be mixed for the purpose of improving the formability of the electrode.
- carbon having a larger particle diameter can be mixed for the purpose of improving the formability of the electrode.
- the particle size of carbon having a larger particle size There is no particular limitation on the particle size of carbon having a larger particle size. For example, when the thickness of the electrode is 20 to 30 m at the maximum, it is about 1 to several m at the maximum.
- the metal supported on carbon is, for example, platinum (Pt), ruthenium (Ru), cobalt (Co), titanium (Ti), nickel (Ni), aluminum (A1) and gold (Au). And at least one metal selected from the group consisting of and mixtures and compounds thereof.
- a method of using a conductive polymer in addition to a metal can be considered.
- Examples of a method for forming the conductive polymer include a method in which a conductive polymer monomer in a solution is cast on carbon and thermally polymerized, a method in which a polymer solution is directly cast, or a method in a monomer solution.
- a method of forming by electrolytic polymerization is conceivable, but the method is not limited to these.
- the electrode composed of the metal-carrying ribbon and the binder is typically formed on a conductive substrate. This conductive substrate is generally made of glass, polymer film, metal, etc.
- the conductive substrate may be a single conductive substrate as a whole or a conductive film formed on a conductive or non-conductive support substrate.
- This conductive substrate is typically transparent, in which case the whole is a conductive transparent substrate, or a transparent or conductive film formed on a conductive or non-conductive transparent support substrate. is there.
- the material of the conductive substrate is not particularly limited, and various base materials can be used.
- the conductive substrate preferably has excellent properties such as a property of blocking moisture and gas entering from outside the photoelectric conversion element, a solvent resistance, a weather resistance, and the like.
- Transparent inorganic substrate such as glass, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polystyrene, polyethylene, polypropylene, polyphenylene sulfide, polyvinylidene fluoride, tetraacetyl cellulose, brominated phenoxy, aramides, polyimides , Polystyrenes, polyarylates, polysulfones, polyolefins, etc., but are not limited thereto. It is preferable to use a transparent plastic substrate as the conductive substrate in consideration of workability, lightness, and the like.
- the thickness of the conductive substrate is not particularly limited, and can be freely selected depending on the light transmittance, the property of shielding the inside and outside of the photoelectric conversion element, and the like.
- the surface resistance of the conductive substrate is preferably 500 ⁇ / port or less, more preferably 100 ⁇ / port or less.
- a known material can be used as the material. Specifically, I Njiumusuzu composite oxide (ITO), fluorine-doped S n 0 2 (FT ⁇ ), although S n 0 2, etc., is not limited to, These can be used in combination of two or more.
- a substrate for forming a semiconductor layer a substrate having the same material and structure as described above can be used.
- binder can be used as the binder to be combined with the metal-carrying ribbon.
- This binder is preferably insoluble in the electrolytic solution.
- specific examples of the binder include polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTF E), and tetrafluoroethylene-hexafluoropropylene copolymer (FEP).
- Tetrafluoroethylene-perfluoroalkylbutylene copolymer PFA
- ethylene-tetrafluoroethylene copolymer ETFE
- PCTF E polychlorotrifluoroethylene
- ECTFE trifluoroethylene copolymer
- PVDF-HFP fluorine rubber vinylidene Fluoro-doped hexafluoropropylene-tetrafluoroethylene-based fluoro rubber
- VD F—HF P _TF E-based fluoro rubber vinylidene fluoride -Penfluorofluoropropylene-based fluoro rubber (0 ?????-based fluoro rubber), vinylidene fluoride-pentafluoropropylene-tetrafluoroethylene-based fluoro rubber (VDF- PFP- TFE-based fluor
- Vinylidene fluoride-based fluororubber tetrafluoroethylene-propylene-based fluororubber (TFE-P-based fluororubber), tetrafluoroethylene-perfluoroalkylvinylether-based fluororubber, thermoplastic fluororubber (for example, manufactured by Daikin Industries, Ltd.)
- Cellulose such as Dielza-moplastic, polyethylene glycol (PEG), ethylene propylene diene monomer (EPDM) and carboxymethyl cellulose (CMC) can be used.
- PVDF polyvinylidene fluoride
- the binder two or more of the above binders may be used in combination.
- the binder is usually used in a state of dissolving or dispersing a powdery binder material using a solvent, but may be used as a powder without using a solvent.
- the solvent used is not particularly limited, and various solvents such as water, methylethyl ketone, cyclohexanone, isophorone, N-methylpyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide, and toluene are used. It may be selected according to the purpose.
- the amount of binder to be added is not particularly limited as long as necessary adhesiveness to the substrate required in the subsequent manufacturing process and use is obtained, but generally, the amount of binder is 5 wt% with respect to carbon.
- the content is particularly preferably at least 15 wt%. If the amount of the binder is too small, the adhesiveness to the substrate becomes insufficient, and if the amount of the binder is too large, the characteristics of the electrode become insufficient.
- the semiconductor layer provided between the transparent conductive substrate and the counter electrode composed of the above electrode is typically made of semiconductor fine particles.
- semiconductor fine particles various compound semiconductors, oxide semiconductors, and the like can be used in addition to elemental semiconductors represented by silicon. These semiconductors are preferably n-type semiconductors in which the conduction band electrons become the carriers under photoexcitation and give an anodic current.
- These semi-conductors specific examples, T i 0 2, Mg_ ⁇ , Zn_ ⁇ is W0 3, Nb 2 0 5, T i S R_ ⁇ 3, S n0 metal oxides such as 2, these Among them, T i 0 2 (particularly one having an anatase type structure) is particularly preferred.
- the kind of semiconductor is not limited to these, and two or more kinds of these can be mixed or compounded.
- the average particle diameter of the primary particles is preferably from 1 to 200 nm, particularly preferably from 5 to 100 nm. Also, it is possible to improve the quantum yield by mixing semiconductor fine particles having an average particle size larger than the average particle size with the semiconductor fine particles having the average particle size, and scattering incident light by the semiconductor fine particles having the larger average particle size. It is. In this case, the average particle diameter of the semiconductor fine particles separately mixed is preferably 20 to 50 O nm.
- any dye can be used as long as it has a sensitizing effect.
- bipyridine a phenanthrin derivative, rhodamine B, rose bengal Xanthene dyes such as cinnacin, eosin, and erythrocycin; cynin dyes such as quinosine and cryptocyanine; phenosafuranine; basic dyes such as bribrill-1, thiosin, and methylenebull; chlorophyll And porphyrin compounds such as porphyrin, zinc porphyrin and magnesium porphyrin, azo dyes, phthalocyanine compounds, coumarin compounds, anthraquinone dyes, and polycyclic quinone dyes.
- the sensitizing dyes are ruthenium (Ru), zinc (Zn), platinum (Pt), and NO. Radiation (Pd), which forms a complex with a metal, may be used.
- Ru ruthenium
- Zn zinc
- platinum Pt
- NO NO
- Radiation (Pd) which forms a complex with a metal
- the Ru biviridine complex compound is particularly preferable because of its high quantum yield.
- the sensitizing dye two or more of these may be mixed at the same time.
- the method of supporting the sensitizing dye on the semiconductor fine particle layer is not particularly limited.
- the sensitizing dye may be an alcohol, a nitrile, a nitromethane, a halogenated hydrocarbon, an ether, dimethyl sulfoxide, or an amine. , N-methylpyrrolidone, 1,3-dimethylimidazolidinone, 3-methylthioxazolidinone, esters, carbonates, ketones, hydrocarbons, water, etc.
- the layer is immersed or a dye solution is applied to the semiconductor fine particle layer.
- the sensitizing dye is dissolved in a paste in which the semiconductor fine particles are dispersed, and the semiconductor fine particles in which the sensitizing dye is preliminarily supported are applied and press-molded.
- the amount of the sensitizing dye molecules adsorbed on one semiconductor fine particle is 1 to 1000 molecules, and more preferably 1 to 300 molecules.
- the dye molecule may be a single molecule or may be in an associated state. In order to control the state of association, the temperature and pressure of the loading may be changed.
- carboxylic acids such as deoxycholic acid may be added.
- an ultraviolet absorber can be used in combination.
- the electrolyte layer is formed by dissolving at least one substance system (oxidation-reduction system) that causes a reversible oxidation / reduction state change in the electrolyte.
- substance system oxidation-reduction system
- redox systems eg, I one / I 3 -, B r- / B r 2 and went halogens, quinone / high Dorokinon, S CN @ - / pseudohalogen such like (S CN) 2, iron (II) ions / iron (III) ions, copper (I) ions / copper (II) ions, but are not limited thereto.
- the electrolyte may be a liquid electrolyte, or may be a gel electrolyte, a polymer solid electrolyte, an inorganic solid electrolyte or the like in which this is contained in a polymer substance.
- Specific examples of the electrolyte include a combination of iodine (I 2 ) with a metal iodide or an organic iodide, a combination of bromine (Br 2 ) with a metal bromide or an organic bromide, and a mixture of fuurocyanate / ferricia.
- Metal complexes such as phosphates and furocene / puricinium ions, sodium compounds such as sodium polysulfide, alkylthiol / alkyl disulfides, piologen dyes, hydroquinone / quinone, and the like can be used.
- Examples of the cation of the metal compound include Li, Na, ⁇ , ⁇ g, Ca, and Cs.
- Examples of the cation of the organic compound include quaternary ammonium cations such as tetraalkylammoniums, pyridiniums, and imidazolymes. Compounds are preferred, but not limited thereto, and two or more of these may be used in combination.
- the concentration of the electrolyte salt is preferably from 0.05 M to 5 M, more preferably from 0.2 M to 1 M, based on the solvent.
- the concentration of I 2 or Br 2 is preferably from 0.005 M to 1 M, more preferably from 0.001 to 0.1 M.
- various additives such as 4-tert-butylpyridine and carboxylic acid can be added for the purpose of improving the open circuit voltage.
- the solvent for the electrolyte layer examples include nitriles such as acetonitrile, Carbonates such as propylene carbonate and ethylene carbonate, gamma-butyrolactone, pyridine, dimethylacetamide, other polar solvents, room-temperature molten salts such as methylpropylimidazolidinyl iodine or mixtures thereof can be used.
- nitriles such as acetonitrile
- Carbonates such as propylene carbonate and ethylene carbonate
- gamma-butyrolactone pyridine
- dimethylacetamide other polar solvents
- room-temperature molten salts such as methylpropylimidazolidinyl iodine or mixtures thereof can be used.
- solvents for the electrolyte layer include water, alcohols, ethers, esters, carbonates, lactones, carboxylate esters, phosphoric acid triesters, heterocyclic compounds, Tolyls, ketones, amides, nitromethane, halogenated hydrocarbons, dimethyl sulfoxide, sulfolane, N-methylpyrrolidone, 1,3_dimethylimidazolidinone, 3-methyloxazolidinone, hydrocarbons, etc. These can be used, and two or more of them can be used in combination. It is also possible to use ionic liquids of tetraalkyl, pyridium and imidazolym quaternary ammonium salts as the solvent.
- a supporting electrolyte may be added to the electrolyte as needed.
- the supporting electrolyte include inorganic salts such as lithium iodide and sodium iodide, and molten salts such as imidazonium and quaternary ammonium.
- the method for manufacturing the photoelectric conversion element is not particularly limited.
- the electrolyte composition can be in a liquid state or can be gelled inside the photoelectric conversion element. And sealing the substrate portion where the semiconductor electrode is not formed so that the two electrodes do not come into contact with each other.
- the size of the gap between the semiconductor electrode and the counter electrode is not particularly limited, but is usually 1 to 100 im, and more preferably 1 to 50 m.
- the sealing method is not particularly limited, a material having light resistance, insulation, and moisture resistance is preferable.
- Various welding methods epoxy resin, ultraviolet curing resin, acrylic adhesive, EVA (ethylene vinyl) Luacetate), ionomer resin, ceramic, heat-sealing film, and the like.
- an inlet for injecting the solution of the electrolyte composition is required.
- the location of this injection port is not particularly limited, but it is desirable that it is not at the extreme.
- There is no particular limitation on the method of injecting the liquid but a method of injecting the liquid into the cell, which is sealed in advance and in which the solution inlet is opened, is preferable.
- the solution it is convenient to drop several drops of the solution into the injection port and inject the solution by capillary action.
- the injection operation can be performed under reduced pressure or heating, if necessary.
- a glass plate or a plastic substrate can be sealed with a sealing agent.
- a polymer solution containing an electrolyte composition and a plasticizer is volatilized and removed by a cast method on a semiconductor electrode supporting a dye.
- sealing is performed in the same manner as in the above method. This sealing is preferably performed using a vacuum sealer or the like under an inert gas atmosphere or under reduced pressure. After sealing, heating and pressurizing operations can be performed as necessary to sufficiently impregnate the electrolyte into the semiconductor fine particle layer.
- the photoelectric conversion element can be manufactured in various shapes depending on its use, and the shape is not particularly limited.
- the above-mentioned method of forming an electrode by forming the above-mentioned electrode comprising carbon carrying a metal and a binder, or forming a mixture of carbon carrying a metal and a binder on a conductive substrate comprises:
- the present invention can be applied not only to elements but also to electronic devices generally using electrodes. Therefore, the fifth invention of the present invention is:
- An electronic device comprising:
- the sixth invention of the present invention is:
- An electronic device manufacturing method comprising a step of forming a mixture of carbon carrying a metal and a binder on a conductive substrate to form an electrode.
- the charge transfer on the electrode is caused by the high specific surface area of the carbon and the catalytic action of the supported metal.
- the speed can be greatly improved.
- FIG. 1 is a sectional view of a main part of a dye-sensitized solar cell according to one embodiment of the present invention.
- FIG. 1 shows a dye-sensitized solar cell according to one embodiment of the present invention.
- the metal oxide semiconductor layer 3 and the counter electrode 6 are arranged such that the electrode 5 and the counter electrode 6 are sequentially formed, and the metal oxide semiconductor layer 3 and the counter electrode 6 are opposed to each other at a predetermined interval. 7 are provided. Then, the whole of them is housed in the case 8 and sealed. However, instead of being stored in Case 8 Alternatively, these may be entirely resin-sealed.
- the transparent electrode 2 and the counter electrode 6 are connected to each other by a conductor, and a current circuit 10 with an ammeter 9 is formed. In this case, light is applied to the metal oxide semiconductor layer 3 from the transparent substrate 1 side.
- the electrode 5 may be omitted if necessary.
- a layer made of, for example, Cr is interposed between them. You may make it exist.
- the electrode 5 and the counter electrode 6 may be formed integrally.
- the material of the electrode 5 include, but are not limited to, glass, transparent conductive glass, metal, and polymer film. However, it is desirable that the material of the electrode 5 does not react even if it touches the electrolyte layer 7 when a pinhole is present in the counter electrode 6.
- the transparent substrate 1 and the substrate 4 can be selected, for example, from the above-mentioned ones as needed.
- the transparent substrate 1 and the substrate 4 are made of, for example, a glass substrate, a transparent plastic substrate or the like.
- the transparent electrode 2 is made of a transparent conductive material.
- the transparent electrode 2 may be, for example, a single film of IT ⁇ , which is the most widely known transparent conductive material, and may be provided with elements such as Zr, Hf, Te, and F. Or a layer formed with a film of another transparent conductive material.
- the laminated structure for example, a structure in which a metal film such as Au, Ag, or Cu is laminated between ITO films can be used, but it is not limited thereto.
- the metal oxide semiconductor layer 3 is formed, for example, by sintering metal oxide semiconductor fine particles on the transparent electrode 2.
- the material of the metal oxide semiconductor layer 3 can be selected, for example, from those already listed as necessary.
- a sensitizing dye (not shown) is supported on the metal oxide semiconductor layer 3. Sensitized by this sensitizing dye. As the sensitizing dye, for example, it is possible to select from the already listed ones as needed.
- the electrolyte, the oxidation-reduction system, the solvent, and the like of the electrolyte layer 7 can be selected, for example, from those already listed as needed. Further, a supporting electrolyte may be added to the electrolyte 7 as needed. This supporting electrolyte can also be selected as needed, for example, from those already listed.
- the counter electrode 6 is composed of carbon carrying a metal and a binder polymer.
- the form of the carbon carrying the metal may be basically any form, but preferably, carbon nanotubes (including carbon nanohorns) having a large specific surface area, needle-like carbon, and wet black ( Registered trademark), acetylene black and the like.
- At least one metal selected from the group consisting of Pt, Ru, Co, Ti, Ni, Al, and Au can be used as the metal supported on the carbon.
- the amount of the carrier is, for example, 5 wt% or more based on the pressure.
- the binder polymer for example, the binder polymer can be selected as needed from those already listed.
- the counter electrode 6 made of carbon carrying a metal and a binder-polymer can be formed, for example, as follows.
- the case where the metal is Pt will be described.
- carbon carrying Pt is produced by a method described in Patent Document 2, for example. That is, chloroplatinic acid (H 2 P t C 16) 1 g was dissolved in distilled water 2 5 0 cc, after adding 1 0. 6 cc with stirring 3 0 wt% of peroxide Hydrogen thereto The sodium thiosulfate Na 2 S 2 O 4 aqueous solution 60 g / 1, 106 cc was added while stirring. Produce more colloidal pt. A carbon dispersion solution was prepared by sufficiently dispersing the carbon on which the colloidal Pt was to be preliminarily supported in a weight ratio of 1 to 100 with distilled water using an ultrasonic stirrer. The mixture is dropped while heating to 0 ° C, and the Pt catalyst is supported on carbon. This is suction-filtered and thoroughly washed to obtain a Pt carrying force.
- chloroplatinic acid (H 2 P t C 16) 1 g was dissolved in distilled water 2 5 0 cc
- a binder polymer for example, N-methylpyrrolidone (NMP) and PVDF
- NMP N-methylpyrrolidone
- PVDF polyvinyl dimethacrylate
- the mixture is applied onto the electrode 5 by a screen printing method, a blade coating method, or the like, and dried by heating, reduced pressure, or both, and pressed.
- a counter electrode 6 consisting of Pt bearing force and binder and polymer is obtained.
- heating may be used in combination with the pressing.
- the temperature at this time is desirably equal to or higher than the glass transition point of the binder polymer used, for example, PVDF.
- a water-soluble polymer such as cell mouth or PTFE
- water and isopropanol are gradually added until a binder polymer of, for example, 50 wt% with respect to the carbon becomes uniform.
- the mixture is mixed, and the mixture is applied on the electrode 5 by a screen printing method, a blade coating method, or the like, and dried by heating, reduced pressure, or both, and pressed.
- the counter electrode 6 composed of the carbon carrying the metal and the binder polymer is obtained.
- the operating mechanism of this dye-sensitized solar cell is as follows. Light incident from the transparent substrate 1 side is carried by the metal oxide semiconductor layer 3. The excited sensitizing dye is excited by the metal oxide semiconductor layer.
- the sensitizing dye that has lost electrons receives electrons from ions in the electrolyte layer 7 that is a carrier transfer layer. Molecules that have passed the electron receive the electron again at counter electrode 6. In this way, a current flows between the poles. As described above, since the transparent electrode 2 and the counter electrode 6 are connected by the current circuit 10, the generated electrons flow to the counter electrode 6 through the metal oxide semiconductor layer 3. Thereby, electric energy can be extracted from between the transparent electrode 2 and the counter electrode 6.
- the high specific surface area of carbon and the support of carbon are achieved by using the counter electrode 6 composed of carbon and a binder and a polymer carrying a metal such as Pt. Due to the catalytic action of the metal such as Pt, the charge transfer speed on the counter electrode 6 is lower than when using Pt, carbon alone, or a conductive polymer as the counter electrode 6 as before. Thus, the photoelectric conversion characteristics of the dye-sensitized solar cell can be improved.
- T i ⁇ 2 fine particles were used as semiconductor fine particles.
- the T i 0 2 paste with a non-patent document 5 reference was made as follows.
- 125 ml of titanium isopropoxide was slowly dropped into a 751 ml aqueous 0.1 M nitric acid solution at room temperature with stirring. After completion of the dropwise addition, the solution was transferred to a constant temperature bath at 80 ° C. and stirred for 8 hours to obtain a cloudy translucent sol solution. The sol solution was allowed to cool to room temperature, filtered through a glass filter, and then diluted to 700 ml. The obtained sol solution was transferred to an autoclave, subjected to a hydrothermal treatment at 220 ° C. for 12 hours, and then subjected to a dispersion treatment by performing an ultrasonic treatment for 1 hour.
- the FTO is used as the transparent electrode 2, applied as described above in the T I_ ⁇ 2 Bae one strike obtained, the size of the screen printing method on the FT 0 0, 7 cm X 0. 7 cm after, held between 6 0 min under 4 5 0 ° C a nitrogen atmosphere to sinter the Nanopo one lath T i 0 2 electrode on F tO substrate (sheet resistance 1 5 ⁇ / D).
- Counter electrode 6 was produced by the following method.
- the above-mentioned electrolytic solution was dropped on the metal oxide semiconductor layer 3 and combined with the above-mentioned counter electrode 6 via a silicon rubber spacer (thickness: 30 ⁇ m) to produce a dye-sensitized solar cell.
- Dye-sensitive solar cells were produced in the same manner as in Example 1 using carbon carrying 40 wt% of Pt-Ru at a weight ratio of 1: 1, and the IV characteristics were evaluated.
- Counter electrode 6 was prepared as follows, and a dye-sensitized solar cell was prepared in the same manner as in Example 1, and the IV characteristics were evaluated.
- a dye-sensitized solar cell was produced in the same manner as in Example 4 using carbon carrying 40 wt% of Pt-Ru at a weight ratio of 1: 1, and the IV characteristics were evaluated.
- Example 6> A press for forming the counter electrode 6 was performed at room temperature, and a dye-sensitized solar cell was manufactured in the same manner as in Example 4, and the IV characteristics were evaluated.
- a dye-sensitized solar cell was manufactured using a gel electrolyte, and the IV characteristics were evaluated.
- the poly (vinylidene fluoride-hexafluoropropylene) copolymer used was a copolymer of vinylidene fluoride and hexafluoropropylene in a ratio of 95: 5.
- this sol gel electrolyte precursor in the same manner as in Example 1 by shake one de-coating, S n 0 2 coated ITO on formed, the metal oxide semiconductor layer 3 which has adsorbed the sensitizing dye It was applied on top and dried at 50 ° C. for 5 minutes to remove dimethyl carbonate, thereby producing a metal oxide semiconductor layer 3 with a gel electrolyte.
- a dye-sensitized solar cell was manufactured by using the above-mentioned metal oxide semiconductor layer with gel electrolyte 3 in combination with the counter electrode 6 and the silicone rubber spacer used in Example 1.
- An electrode 6 was prepared in the same manner as in Example 1 except that the final pressing step was not performed, a dye-sensitized solar cell was prepared, and the IV characteristics were evaluated. Evaluation of I-V characteristics
- the photoelectric conversion efficiency is measured by using a current-voltage measuring device to connect the transparent substrate 1 and the counter electrode 6 of each dye-sensitized solar cell to a penilope clip, and irradiate the dye-sensitized solar cell with light to generate current. did.
- the ratio between the maximum output and the light irradiation intensity obtained in this measurement was defined as the photoelectric conversion efficiency.
- the light irradiation was performed using a xenon lamp as a light source, and the light intensity on the dye-sensitized solar cell was set at 100 mW / cm 2 .
- Table 1 shows the evaluation results of the photoelectric conversion characteristics.
- Comparative Example 2 5.4% As is clear from Table 1, the solar cell of Examples 1 to 7 using the counter electrode 6 composed of Pt carrying force and binder and polymer was compared with Comparative Examples 1 and 2. And high photoelectric conversion efficiency is obtained.
- the numerical values, structures, shapes, materials, raw materials, processes, and the like described in the above embodiments are merely examples, and different numerical values, structures, shapes, materials, raw materials, processes, and the like may be used as necessary. Is also good.
- the electrode is formed by the carbon carrying the metal and the binder, compared to the case where the electrode is formed by Pt, carbon alone, a conductive polymer, etc.
- the speed of charge transfer on the electrode can be improved.
- this electrode as a counter electrode or the like, the photoelectric conversion characteristics of a photoelectric conversion element such as a dye-sensitized solar cell can be improved.
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JP2005506757A JPWO2004109840A1 (ja) | 2003-06-06 | 2004-05-26 | 電極およびその形成方法ならびに光電変換素子およびその製造方法ならびに電子装置およびその製造方法 |
US12/260,187 US20090078315A1 (en) | 2003-03-26 | 2008-10-29 | Electrode, method of making same, photoelectric transfer element, method of manufacturing same, electronic device and method of manufacturing same |
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Also Published As
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US20070125418A1 (en) | 2007-06-07 |
US20090078315A1 (en) | 2009-03-26 |
US8035185B2 (en) | 2011-10-11 |
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