WO2004105055A1 - 透明導電膜付透光性基板 - Google Patents
透明導電膜付透光性基板 Download PDFInfo
- Publication number
- WO2004105055A1 WO2004105055A1 PCT/JP2004/007543 JP2004007543W WO2004105055A1 WO 2004105055 A1 WO2004105055 A1 WO 2004105055A1 JP 2004007543 W JP2004007543 W JP 2004007543W WO 2004105055 A1 WO2004105055 A1 WO 2004105055A1
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- WO
- WIPO (PCT)
- Prior art keywords
- conductive film
- transparent conductive
- substrate
- light
- film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000012789 electroconductive film Substances 0.000 title abstract 8
- 239000010408 film Substances 0.000 claims abstract description 119
- 238000002834 transmittance Methods 0.000 claims abstract description 28
- 230000003746 surface roughness Effects 0.000 claims abstract description 24
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 28
- 238000005118 spray pyrolysis Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 description 38
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 239000000178 monomer Substances 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- -1 polyethylene terephthalate Polymers 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 7
- 229910052809 inorganic oxide Inorganic materials 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000003570 air Substances 0.000 description 5
- 239000003814 drug Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229920000098 polyolefin Polymers 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 150000003606 tin compounds Chemical class 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 239000004386 Erythritol Substances 0.000 description 2
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
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- 238000010894 electron beam technology Methods 0.000 description 2
- UNXHWFMMPAWVPI-ZXZARUISSA-N erythritol Chemical compound OC[C@H](O)[C@H](O)CO UNXHWFMMPAWVPI-ZXZARUISSA-N 0.000 description 2
- 229940009714 erythritol Drugs 0.000 description 2
- 235000019414 erythritol Nutrition 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002472 indium compounds Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
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- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000006097 ultraviolet radiation absorber Substances 0.000 description 2
- WSWCOQWTEOXDQX-MQQKCMAXSA-M (E,E)-sorbate Chemical compound C\C=C\C=C\C([O-])=O WSWCOQWTEOXDQX-MQQKCMAXSA-M 0.000 description 1
- ZBBLRPRYYSJUCZ-GRHBHMESSA-L (z)-but-2-enedioate;dibutyltin(2+) Chemical compound [O-]C(=O)\C=C/C([O-])=O.CCCC[Sn+2]CCCC ZBBLRPRYYSJUCZ-GRHBHMESSA-L 0.000 description 1
- ATWISEHEXAEGKB-UHFFFAOYSA-N 2,2-dimethyldodecane Chemical compound CCCCCCCCCCC(C)(C)C ATWISEHEXAEGKB-UHFFFAOYSA-N 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- ONIKNECPXCLUHT-UHFFFAOYSA-N 2-chlorobenzoyl chloride Chemical compound ClC(=O)C1=CC=CC=C1Cl ONIKNECPXCLUHT-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 241000283984 Rodentia Species 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 241000555745 Sciuridae Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- LUZSPGQEISANPO-UHFFFAOYSA-N butyltin Chemical compound CCCC[Sn] LUZSPGQEISANPO-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- RJGHQTVXGKYATR-UHFFFAOYSA-L dibutyl(dichloro)stannane Chemical compound CCCC[Sn](Cl)(Cl)CCCC RJGHQTVXGKYATR-UHFFFAOYSA-L 0.000 description 1
- AYOHIQLKSOJJQH-UHFFFAOYSA-N dibutyltin Chemical compound CCCC[Sn]CCCC AYOHIQLKSOJJQH-UHFFFAOYSA-N 0.000 description 1
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910021474 group 7 element Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- AHAREKHAZNPPMI-UHFFFAOYSA-N hexa-1,3-diene Chemical compound CCC=CC=C AHAREKHAZNPPMI-UHFFFAOYSA-N 0.000 description 1
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 1
- SRNMFPSMASDEKJ-UHFFFAOYSA-N indium;nitric acid Chemical compound [In].O[N+]([O-])=O SRNMFPSMASDEKJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000004571 lime Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- GKTNLYAAZKKMTQ-UHFFFAOYSA-N n-[bis(dimethylamino)phosphinimyl]-n-methylmethanamine Chemical group CN(C)P(=N)(N(C)C)N(C)C GKTNLYAAZKKMTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- FCJSHPDYVMKCHI-UHFFFAOYSA-N phenyl benzoate Chemical compound C=1C=CC=CC=1C(=O)OC1=CC=CC=C1 FCJSHPDYVMKCHI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229940075554 sorbate Drugs 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/125—Process of deposition of the inorganic material
- C23C18/1258—Spray pyrolysis
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
Definitions
- the present invention relates to a translucent substrate with a highly transparent conductive film.
- Conventional technology :
- JP-A-7-242442 discloses that tin-doped indium oxide (IT0) has a thickness of 23 nm and a transmittance of 550 nm of 955 nm. 1% (the transmittance at 40 O nm is considered to be 87.6% from FIG. 1).
- JP-A-7-242443 discloses that the film thickness of IT0 is 20%. The transmittance is 86.8% at 400 nm and 92.2% at 500 nm at 400 nm. It was thought that an ultra-thin film would not result in a continuous film.
- An object of the present invention is to provide a translucent substrate with a transparent conductive film which is sufficiently transparent.
- the present inventors have conducted intensive studies to solve the above-mentioned problems, and as a result, succeeded in obtaining a continuous film of an ultra-thin film on the light-transmitting substrate with a transparent conductive film, and completed the present invention. .
- the present invention is as follows.
- the maximum surface roughness of the transparent conductive film is in the range of 1-2 nm.
- a glass substrate or a resin substrate which is easily available and is excellent in light transmittance and other physical properties is preferable.
- Glass substrates can be broadly classified into alkali glass and non-alkali glass.
- Alkali glass is inexpensive and easy to obtain, so it has great cost advantages.However, it contains about 13 to 14% of Alkali metal oxide to prevent contamination from these alkali metals. It has drawbacks such as the need for countermeasures and poor heat resistance.
- non-alkali glass is preferable because it has no risk of alkali metal contamination and has heat resistance.
- the alkali glass for example, S i O 2: 7 2 wt%, A 1 2 0 3: 2 by weight%, C a 0: 8 wt%, M g O: 4 wt%, N a 2 0: 1 3.
- 5 wt% of the source one da-lime glass composition and the like are known as the non-Al force Rigarasu, eg S i 0 2: 4 9 wt%, a 1 2 0 3: 1 0 wt%, B 2 0 3 : Composition of 15% by weight, BaO: 25% by weight Of and Houkei acid (7 0 5 9) glass, S i 0 2: 5 3 wt%, A 1 2 0 3: 1 1 by weight%, B 2 0 3: 1 1 by weight%, C a O: 2 weight %, Mg O: 2 wt%, B a O: 1 5 wt%, Z n O: 6 wt% of Houkei acid composition (AN) glass, S i ⁇ 2:54 wt%, a 1 2 0 3: 1 4 wt%, B 2 0 3: 1 5 wt%, Mg O: 2 5% by weight of Houkei acid composition (NA-
- the surface roughness of a substrate such as glass is preferably an average surface roughness Ra ⁇ 10 nm and a maximum surface roughness Rmax ⁇ 50 nm, and may be polished.
- the substrate using alkali glass has an average surface roughness Ra ⁇ 10 nm
- the substrate using non-alkaline glass has an average surface roughness Ra ⁇ 5, maximum surface roughness.
- Roughness Rmax ⁇ 2 Onm is preferred.
- the average surface roughness is usually Ra ⁇ 0.1 nm and the maximum surface roughness R max ⁇ 0.5 nm.
- mirror polishing using diamond, cerium oxide, or the like may be used as a method for adjusting the surface roughness of the glass substrate within the above range.
- the resin include a film, sheet, or plate made of polyester such as polycarbonate, polyethylene terephthalate, and polyarylate, polyethersulfone resin, amorphous polyolefin, polystyrene, and acrylic resin. .
- polyester such as polycarbonate, polyethylene terephthalate, and polyarylate
- polyethersulfone resin amorphous polyolefin
- polystyrene polystyrene
- acrylic resin acrylic resin.
- those made of a polyolefin-based transparent thermosetting resin are preferable, and are obtained by polymerizing a composition containing a polyfunctional monomer having two or more unsaturated groups.
- Polyolefin copolymers are more preferably used.
- polyfunctional monomer having two or more unsaturated groups include (i) ethylene glycol di (meth) acrylate, diethylene glycol di (meth) acrylate, and triethylene glycol diacrylate.
- the above transparent thermosetting resin preferably contains various ultraviolet absorbers, antioxidants and antistatic agents from the viewpoints of light resistance, oxidation deterioration resistance and antistatic properties.
- the transparent thermosetting resin is the above-mentioned polyolefin-based copolymer
- the polyolefin-based copolymer uses a monomer having ultraviolet absorbing or antioxidant properties.
- Preferred examples of such a monomer include a benzophenone-based ultraviolet absorber having an unsaturated double bond, a phenylbenzoate-based ultraviolet absorber having an unsaturated double bond, and a hindered amino group as a substituent.
- (Meth) acrylic acid monomers are preferably used in the range of 0 to 5 to 20 wt% based on the total amount of the monomers used to obtain the intended polyolefin-based copolymer.
- the surface condition of the resin substrate used is such that the number of protrusions of 60 nm or more existing in a 500-m square area on the flat surface has a root-mean-square value of surface roughness of 30 nm or less. It is preferred that there are no more than zero faces.
- the “root mean square value of the surface roughness” in the present invention with respect to the flat surface is a root mean square value of deviation from the average value of the height of the surface irregularities. Means the degree.
- “the number of protrusions of 60 nm or more existing in the region of 500 im angle on the flat surface” referred to in the present invention means that 10 places are arbitrarily set on the flat surface. It means the average value of the number of protrusions with a height of 60 nm or more in each of the 0-angle regions. The height and number of protrusions in each region can be determined using an electron microscope, an atomic force microscope, or the like.
- the thickness of the transparent thermosetting resin substrate can be appropriately selected according to the intended use or the like. In the case of a united structure, the thickness is preferably 0.1 to 1.5 mm, more preferably 0.1 to 1.0 mm, in consideration of mechanical properties.
- An inorganic oxide film can be formed between the light-transmitting substrate and the transparent conductive film, if necessary, in order to prevent the penetration of an alkaline component into the transparent conductive film.
- Specific examples of the inorganic oxide film include silicon oxide (S i O x ), aluminum oxide (A l 2 ⁇ x), titanium oxide (T i O x ), and zirconium oxide (Z r O x ), Yttrium oxide (Y 2 O x ), ytterbium oxide (Y b 2 O x ), magnesium oxide (Mg O x ), tantalum oxide (T a 2 O x ), cerium oxide (C e O x) or hafnium oxide (H f O x), polysilane film formed of an organic polysilane compound, a composite oxide of M g F 2 ⁇ , C a F 2 film, S i O x and T i O x And the like can be exemplified.
- the thickness of the inorganic oxide film can be appropriately changed depending on the material, but is generally in the range of 2 to 20 nm. If the film thickness is too small, it is not possible to prevent the entry of alkali components and the like. On the other hand, if the film thickness is too large, the light transmittance decreases.
- the flatness of the surface of the inorganic oxide film is desirably as high as the flatness of the flat surface of the above-mentioned substrate which is the base of the inorganic oxide film.
- Inorganic oxide films having such flatness can be formed by sputtering methods such as direct current method, magnetron method, high frequency discharge method, vacuum evaporation method, ion plating method, plasma CVD method, and dip method. It can be formed by a method such as a spray pyrolysis method or a pie mouth sol method.
- the substrate temperature during film formation is preferably set to a temperature at which the substrate does not substantially undergo thermal deformation.
- the thickness of the transparent conductive film is 12 to 2 nm, preferably 10 to 2 nm, because the thinner the better, the better the light transmittance, but the more it must be a continuous film that does not form an island structure.
- the thickness is 9 to 2 nm for increasing the light transmittance, and 8 to 2 nm for further increasing the light transmittance.
- the light transmittance of the light-transmitting substrate with a transparent conductive film of the present invention is preferably 88% or more, more preferably 90% or more, for light having a wavelength of 400 nm, and the total light transmittance is good. It is preferably at least 90%, more preferably at least 92%, even more preferably at least 93%.
- the transmissive substrate with a transparent conductive film also preferably has a transmittance of 85% or more for light having a shorter wavelength of 350 nm, and it is preferable that the transmittance be greater. If ITO is used as the transparent conductive film, but generally contains I n 2 0 3 and S n 0 2 stoichiometric group formed, oxygen content may deviate somewhat therefrom.
- I n O x * S n O Y X is preferably in the range of 1.0 to 2.0, and Y is preferably in the range of 1.6 to 2.4.
- the mixing ratio of I n 2 0 3 to S n 0 2 is 0.0 5-4 0 wt% range are preferred, from 1 to 2 0% by weight, still more 5-1 2 wt% range preferable.
- the ratio of S n 0 2 is high, the thermal stability is increased.
- the method for producing the transparent conductive film is not particularly limited as long as it is a method of forming a thin film on a substrate.
- the chemical vapor deposition method (CVD method), the spray pyrolysis method, the sol-gel method and the like can be exemplified, and particularly, the spray pyrolysis method and the sol-gel method can be preferably exemplified.
- a metal for example, indium, zinc, etc.
- a metal to be doped for example, tin, zinc oxide, etc.
- a mixture of fluorine, a fluorine compound, aluminum, etc.) and oxygen gas, or a sintered material of a metal oxide (eg, indium oxide, zinc oxide, etc.) is used as an evaporating substance to form the transparent conductive film.
- a film can be formed.
- I n 2 O 3 to S n O 2 with de one flop was evening DC sputtering evening using an rodents bets or RF Spa jitter method, It is preferable to form with.
- the sputter gas is not particularly limited, and an inert gas such as Ar, He, Ne, Kr, and Xe, or a mixed gas thereof may be used. Furthermore, these gases may contain 0 2 2 0% or less.
- the pressure at the time of such a sparging gas is usually about 0.1 to 20 Pa.
- the substrate temperature during film formation is preferably in the range of 150 to 500 ° (particularly, in the range of 200 to 400 °).
- heat treatment can be performed as desired.
- the temperature of the heat treatment is preferably in the range of 100 to 550 ° C, more preferably in the range of 150 to 300 ° C, and the treatment time is preferably 0.1 to 3 hours. More preferably, 0.3 to 1 hour is preferable.
- the processing atmosphere is preferably air, nitrogen, oxygen, hydrogenated nitrogen atmosphere, organic solvent added air or nitrogen atmosphere.
- indium trisacetyl acetate toner I (I n (CH 3 CO CHCO CH 3 ) 3), b Njiu arm tris benzo I methanone sulfonates (I n (C 6 H 5 COCHCOC 6 H 5) 3), three I chloride Njiumu (I n C 1 3), nitric acid indium (I n (N0 3) 3 ), indium tri iso-propoxide (I n (OP r - i ) 3) preferably can be exemplified such as a indicator ⁇ beam preparative squirrel ⁇ cetyl ⁇ Se toner bets.
- stannic chloride dimethyltin dichloride, dibutyltin dichloride, tetra Examples thereof include butyl tin, stania sorbate (Sn (OCOC 7 H 15 ) 2 ), dibutyl tin maleate, dibutyl dimethyl acetate, dibutyl tin bis acetyl acetate toner, and the like.
- a Group 3 element such as Mg, Ca, Sr, and Ba, a Group 3 element such as Sc, Y, and La , Lanthanides such as Ce, Nd, Sm, and Gd; Group 4 elements such as Ti, Zr, and Hf; Group 5 elements such as V, Nb, and Ta; Cr, Mo, and W Group 6 element such as Mn, Group 7 element such as Mn, Group 9 element such as Co, Group 10 element such as Ni, Pd, Pt, etc., and Group 11 element such as Cu, Ag Group 1 element, Group 1 element such as Zn, Cd, etc., Group 1 element such as B, A1, Ga, etc., Group 1 4 element such as Si, Ge, Pb, P, A It is also preferable to add a simple substance such as a Group 5 element such as s or Sb or a Group 16 element such as Se or Te or a compound thereof to form an ITO film
- the addition ratio of these elements is about 0.05 to 20 atomic% with respect to indium.
- the addition ratio varies depending on the added element, and the element and the added amount can be appropriately selected according to the target resistance value.
- Methods of forming an ITO film on a glass substrate by the pie-sol method or the spray pyrolysis method include the use of organic solvents such as alcohols such as methanol and ethanol, and ketones such as acetone, methylbutylketone, and acetylacetone.
- organic solvents such as alcohols such as methanol and ethanol
- ketones such as acetone, methylbutylketone, and acetylacetone.
- the mixture solution can be atomized by an ultrasonic atomization method, a spray method, or the like, and an ultrasonic atomization method capable of stably generating fine particles having a uniform particle diameter is preferable.
- An oxidizing gas usually air, is used as a carrier gas.
- crystal nuclei having an ITO film composition are generated on the glass substrate by contact between the fine particles of the mixed solution and the heated glass substrate, and adjacent nuclei grow as the nuclei grow.
- the contact nuclei are constrained by each other, and the growth is mainly in the direction perpendicular to the substrate surface.
- the ITO film has good etching properties.
- “uniform” means that the tin atoms do not segregate on the film surface, and that the value of the film surface does not exceed twice the average value in the film in the atomic ratio of tin / indium.
- the transparent conductive film is preferably a crystalline conductive film.
- the film structure is not particularly limited, and may be a structure in which massive crystals are stacked, and among them, an aggregate of columnar single crystals is preferable.
- the transparent conductive film preferably has a grain size in the range of 20 to 100 nm.
- the shape of the crystallite is not particularly limited, it is preferably spherical or spheroidal, and it is preferable that the number of protrusions and corners is small. The shape and size of the crystallite can be evaluated by observing the surface using a transmission microscope (TEM).
- TEM transmission microscope
- the transparent conductive film of the present invention has a maximum surface roughness R ma of preferably l to 20 nm, more preferably 1 to 15 nm, and an average surface roughness of Ra is preferably in the range of 0.1 to 10 nm, more preferably 0.1 to 1 nm.
- the conductive film formed on the substrate as described above may be further subjected to UV ozone irradiation or irradiation of ions such as oxygen ions, nitrogen ions, and argon ions as necessary.
- Conditions for UV ozone irradiation include, for example, the main wavelength of the light source of 2537 ⁇ , 1849 ⁇ , the amount of oxygen gas introduced into the irradiation tank, 10 liter / min, and the substrate temperature of 10 to 30 °. ° C, irradiation time is 10 minutes to 5 hours.
- the condition of the ion irradiation for example, an irradiation vessel internal pressure 1 0- 6 ⁇ 1 O-iP a radiation drive voltage 1 0 to 1 0 0 0 V, irradiation time 1 0 second to 1 hour.
- the above-described UV ozone irradiation and ion irradiation may be performed on a ⁇ conductive film having desired surface irregularities. When UV ozone irradiation or ion irradiation is performed, the surface of the conductive film can be cleaned without damaging the substrate.
- FIG. 1 shows the spectral characteristics (transmittance) of the ITO glasses prepared in Examples 1 to 4.
- FIG. 2 shows the spectral characteristics (reflectance) of the ITO glasses prepared in Examples 1 to 4.
- FIG. 3 is a surface photograph of the ITO glass prepared in Example 3 obtained by an atomic force microscope.
- FIG. 4 shows the results of measurement of the contents of indium and tin in the depth direction of the ITO film by ESCA of the ITO glass prepared in Examples 5 and 6.
- ITO film was formed on a glass substrate by the pyrosol method. That, S i ⁇ 2 film (thickness 1 0 nm) plecos one Bok was Houkei acid (BLC) polished glass substrate (2 6 0 X
- An ITO film having a thickness of 10 nm was formed in the same manner as in Example 1 except that the speed of the belt conveyor and the amount of atomized medicine were adjusted.
- Table 1 shows the analysis results of the obtained ITO glass, Fig. 1 shows the transmittance of the spectral characteristics, and Fig. 2 shows the reflectance.
- ITO films were formed on glass substrates by the pie-mouth sol method. That is, a borosilicate (BLC) glass polished substrate (260 ⁇ 220 ⁇ 0.4 mm) precoated with a Sio 2 film (film thickness: 10 nm) was heated in a conveyor furnace heated to 500 ° C. The acetyl acetate solution of stannic chloride-indium acetyl acetonate containing 12% of tin atoms in atomic ratio is atomized into a mist and the air is carried as carrier gas into the conveyor furnace. By blowing and contacting the surface of the glass substrate to cause thermal decomposition, an 8 nm-thick ITO film was formed.
- BLC borosilicate
- Fig. 1 shows the transmittance of the spectral characteristics of the obtained ITO glass
- Fig. 2 shows the reflectance.
- An ITO film having a thickness of 6 nm was formed in the same manner as in Example 3 except that the speed of the belt conveyor 1 ′ and the amount of atomized medicine were adjusted.
- Table 1 shows the analysis results of the obtained ITO glass
- Fig. 1 shows the transmittance of spectral characteristics
- Fig. 2 shows the reflectance
- Fig. 3 shows a surface photograph obtained by AFM.
- the ITO glass obtained in Examples 1 to 4 did not peel off the ITO film even after washing, and did not erode upon peeling off.
- Example 2 Same as in Example 1 except that the drug is an acetyl acetate solution of stannic chloride-indium acetyl acetate, containing 5% tin atom by atomic ratio, and the speed of atomizing the drug at the speed of the belt conveyor is adjusted.
- an ITO film having a thickness of 10 nm was formed.
- the total light transmittance of the obtained ITO glass was 93%.
- the composition of the metal atoms in the film was measured using ESCA, tin atoms were uniformly present in the film from the surface to the substrate without segregation.
- Figure 4 shows the measurement results.
- ITO film having a thickness of 8 nm was formed in the same manner as in Example 5 except that the speed of the belt conveyor and the amount of atomized medicine were adjusted.
- the total light transmittance of the obtained ITO glass was 93%.
- tin atoms were uniformly present in the film from the surface to the substrate without segregation.
- Figure 4 shows the measurement results.
- the light-transmitting substrate with a transparent conductive film according to the present invention is highly transparent and can reduce the amount of light and energy for the device, and is suitable as an electrode for a liquid crystal display (LCD), a liquid crystal light control device, an LCD lens, and the like.
- the industrial utility value is high.
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Abstract
Description
Claims
Priority Applications (4)
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US10/558,727 US20060285213A1 (en) | 2003-05-26 | 2004-05-26 | Light transmitting substrate with transparent conductive film |
JP2005506440A JP4538410B2 (ja) | 2003-05-26 | 2004-05-26 | 透明導電膜付透光性基板の製造方法 |
EP04734901A EP1628310A4 (en) | 2003-05-26 | 2004-05-26 | TRANSLUCENT SUBSTRATE WITH TRANSPARENT ELECTRICALLY CONDUCTIVE FILM |
CN200480014274.0A CN1795516B (zh) | 2003-05-26 | 2004-05-26 | 带有透明导电膜的透光性基板 |
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EP (1) | EP1628310A4 (ja) |
JP (1) | JP4538410B2 (ja) |
KR (1) | KR100743417B1 (ja) |
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- 2004-05-26 KR KR1020057022473A patent/KR100743417B1/ko not_active IP Right Cessation
- 2004-05-26 US US10/558,727 patent/US20060285213A1/en not_active Abandoned
- 2004-05-26 JP JP2005506440A patent/JP4538410B2/ja not_active Expired - Fee Related
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Cited By (10)
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JP2007101622A (ja) * | 2005-09-30 | 2007-04-19 | Geomatec Co Ltd | 表示用電極膜および表示用電極パターン製造方法 |
JP2009529150A (ja) * | 2006-03-03 | 2009-08-13 | ジェンテックス コーポレイション | 改良薄膜コーティング、電気光学要素、及びこれらの要素を組み込んだアセンブリ |
KR101278371B1 (ko) | 2006-03-03 | 2013-06-25 | 젠텍스 코포레이션 | 개선된 박막 코팅, 전기 광학 요소 및 이들 요소를 포함하는 어셈블리 |
JP2014029556A (ja) * | 2006-03-03 | 2014-02-13 | Gentex Corp | 改良薄膜コーティング、電気光学要素、及びこれらの要素を組み込んだアセンブリ |
JP2009104842A (ja) * | 2007-10-22 | 2009-05-14 | Nitto Denko Corp | 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル |
US9428625B2 (en) | 2007-10-22 | 2016-08-30 | Nitto Denko Corporation | Transparent conductive film, method for production thereof and touch panel therewith |
JP2012246570A (ja) * | 2012-07-06 | 2012-12-13 | Nitto Denko Corp | 透明導電性フィルム、その製造方法及びそれを備えたタッチパネル |
WO2015166723A1 (ja) * | 2014-04-30 | 2015-11-05 | 日東電工株式会社 | 透明導電性フィルム |
JPWO2015166723A1 (ja) * | 2014-04-30 | 2017-04-20 | 日東電工株式会社 | 透明導電性フィルム |
US10002687B2 (en) | 2014-04-30 | 2018-06-19 | Nitto Denko Corporation | Transparent conductive film |
Also Published As
Publication number | Publication date |
---|---|
EP1628310A4 (en) | 2009-01-21 |
JPWO2004105055A1 (ja) | 2006-07-20 |
CN1795516B (zh) | 2014-10-22 |
EP1628310A1 (en) | 2006-02-22 |
KR20060015298A (ko) | 2006-02-16 |
KR100743417B1 (ko) | 2007-07-30 |
JP4538410B2 (ja) | 2010-09-08 |
US20060285213A1 (en) | 2006-12-21 |
CN1795516A (zh) | 2006-06-28 |
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