WO2004080914A1 - Wärmesenke mit hoher wärmeleitfähigkeit - Google Patents

Wärmesenke mit hoher wärmeleitfähigkeit Download PDF

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WO2004080914A1
WO2004080914A1 PCT/AT2004/000018 AT2004000018W WO2004080914A1 WO 2004080914 A1 WO2004080914 A1 WO 2004080914A1 AT 2004000018 W AT2004000018 W AT 2004000018W WO 2004080914 A1 WO2004080914 A1 WO 2004080914A1
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silicon
component according
volume
diamond
composite material
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German (de)
English (en)
French (fr)
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Arndt LÜDTKE
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Plansee SE
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Plansee SE
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Priority to EP04703308.9A priority Critical patent/EP1601630B1/de
Priority to US10/548,725 priority patent/US8575051B2/en
Priority to JP2006503938A priority patent/JP4880447B2/ja
Publication of WO2004080914A1 publication Critical patent/WO2004080914A1/de
Anticipated expiration legal-status Critical
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Definitions

  • the invention relates to a component as a heat sink made of a composite material with a diamond content of 40-90% by volume, with an average size of the diamond grains of 5 to 300 ⁇ m, and a method for its production.
  • Heat sinks are widely used in the manufacture of electronic components.
  • the semiconductor components and a mechanically stable casing are the essential components of an electronic package.
  • the terms substrate, heat spreader or carrier plate are often used for the heat sink.
  • the semiconductor component consists, for example, of single-crystal silicon or gallium arsenide. This is connected to the heat sink, and soldering methods are usually used as the joining technique.
  • the heat sink has the function of dissipating the heat generated during the operation of the semiconductor component.
  • Semiconductor components with particularly high heat development are, for example, LDMOS (laterally diffused metal oxide semi-conductor), laser diodes, CPU (central processing unit), MPU (microprocessor unit) or HFAD (high frequency amplify device).
  • LDMOS laterally diffused metal oxide semi-conductor
  • laser diodes laser diodes
  • CPU central processing unit
  • MPU microprocessor unit
  • HFAD high frequency amplify device
  • the geometric designs of the heat sink
  • Semiconductor materials are low compared to other materials and are used in the literature for silicon with 2.1 x 10 "6 K “ 1 to 4.1 x 10 "6 K “ 1 and for gallium arsenide with 5, 6 x 10 "6 K “ 1 to 5.8 x 10 "6 K “ 1 specified.
  • Ceramic materials, composite materials or plastics are usually used for the encapsulation. Examples of ceramic materials are Al 2 0 3 with a Expansion coefficient of 6.5 x 10 "6 K “ 1 or aluminum nitride with an expansion coefficient of 4.5 x 10 "6 K “ 1 .
  • Tensions can arise during the manufacture of the package, namely during the cooling phase from the soldering temperature to the room temperature. However, temperature fluctuations also occur during operation of the package, which range, for example, from -50 ° C to 200 ° C and can lead to thermomechanical stresses in the package.
  • Single-phase metallic materials do not sufficiently meet the required property profile, since the materials with high thermal conductivity also have a high coefficient of thermal expansion. Therefore, in order to meet the requirement profile, composite materials or material composites are used for the production of the substrate.
  • Usual tungsten-copper and Mo-copper composite materials or composite materials such as are described for example in EP 0 100 232, US 4 950 554 and US 5 493 153 have a thermal conductivity at room temperature of 170 to 250 W / (mK) a coefficient of thermal expansion of 6.5 x 10 "6 to 9.0 x 10 " 6 K "1 , which is no longer sufficient for many applications.
  • Heat sinks were also of interest to diamond or composite materials or composite materials containing diamond. This is the thermal conductivity of diamond at 1,000 to 2,000 W / (mK), whereby the content of nitrogen and boron atoms on lattice sites is particularly important for quality.
  • EP 0521 405 describes a heat sink which has a polycrystalline diamond layer on the side facing the semiconductor chip.
  • the lack of plastic deformability of the diamond layer can lead to cracks in the diamond layer as soon as it cools down from the coating temperature.
  • US Pat. No. 5,273,790 describes a diamond composite material with a thermal conductivity> 1,700 W / (m.K), in which loose, shaped diamond particles are converted from the gas phase into a stable shaped body by means of subsequent diamond deposition.
  • the diamond composite produced in this way is too expensive for commercial use in mass parts.
  • WO 99/12866 describes a method for producing a
  • Diamond-silicon carbide composite material described It is manufactured by infiltrating a diamond skeleton with silicon or a silicon alloy. Due to the high melting point of silicon and the resulting high infiltration temperature, diamond is partly converted into carbon or subsequently into silicon carbide. Due to the high brittleness, the mechanical workability of this material is extremely problematic and complex, so that this composite material has not yet been used for heat sinks.
  • US 4902652 describes a method for producing a sintered diamond material.
  • An element from the group of transition metals from groups 4a, 5a and 6a, boron and silicon is deposited on diamond powder by means of physical exposure processes.
  • the coated diamond grains are then connected to one another by means of a solid phase sintering process. It is disadvantageous that the resulting product has a high porosity and a coefficient of thermal expansion that is too low for many applications.
  • No. 5,045,972 describes a composite material in which, in addition to diamond grains with a size of 1 to 50 ⁇ m, there is a metallic matrix which consists of aluminum, magnesium, copper, silver or their alloys. The disadvantage here is that the metallic matrix is only poorly bonded to the diamond grains, so that the thermal conductivity and mechanical integrity are insufficient to this extent.
  • the metal carbides are the carbides of the metals of the 4a to 6a groups of the periodic table. Particular emphasis is given to EP 0 859 408 TiC, ZrC and HfC. Ag, Cu, Au and Al are mentioned as particularly advantageous filler metals. It is disadvantageous that the metal carbides have a low thermal conductivity, which for TiC, ZrC, HfC, VC, NbC and TaC is in the range from 10 to 65 W / (m.K). Another disadvantage is that the metals of the 4a to 6a groups of the periodic table have a solubility in the filler metal, such as silver, whereby the thermal conductivity of the metal phase is greatly reduced.
  • EP 0 898 310 describes a heat sink which consists of diamond grains, a metal or a metal alloy of high thermal conductivity from the group Cu, Ag, Au, Al, Mg and Zn and a metal carbide of the metals of groups 4a, 5a and Cr, the Metal carbides cover at least 25% of the surface of the diamond grains.
  • the process speed and the degree of integration of the semiconductor components have increased significantly, which has also led to an increase in heat development in the package.
  • Optimal heat management is therefore an increasingly important criterion.
  • the thermal conductivity of the materials described above is no longer sufficient for a large number of applications, or their production is too expensive for widespread use.
  • the availability of improved, inexpensive heat sinks is a prerequisite for further optimization of semiconductor components.
  • the component according to the invention has excellent adhesive strength between the diamond grains and the phase rich in Ag, Au or Al due to the silicon-carbon compound formed in between. A thickness of this is sufficient to achieve this connection
  • Silicon-carbon compound in the nanometer range or a degree of coverage of> 60 percent.
  • the degree of coverage is to be understood as the proportion of the diamond grain surface which is covered with the silicon-carbon compound. According to these premises, this corresponds to a volume content of the silicon-carbon compound of> 0.005 percent.
  • silicon carbide In contrast to metal carbides, silicon carbide has a very high thermal conductivity of around 250 W / (mK). Since the solubility of Si in Ag, Au and Al is very low at room temperature, the very high thermal conductivity of these metals in the pure state is only slightly deteriorated. Alloys of Ag, Au or Al with Cu or Ni also have a sufficiently high thermal conductivity, which is deteriorated to a not unacceptably high degree by low, dissolved Si components. Furthermore, the machinability is sufficient due to the very ductile Ag, Au or Al structural components. For a cost-effective representation, it is also advantageous that the diamond content can be reduced due to the high thermal conductivity of the Ag, Au or Al-rich structural components.
  • Particularly advantageous contents of silicon carbide and phase rich in Ag, Au or Al are 0.1 to 7% by volume or 7 to 30% by volume.
  • Tests have shown that diamond powders can be processed in a wide range of grain sizes. In addition to natural diamonds, cheaper synthetic diamonds can also be processed. Excellent processing results have also been achieved with the common coated diamond grades. This means that the cheapest variety can be used. For non-cost-critical applications with extremely high demands on thermal conductivity, it is favorable to use a diamond fraction with an average grain size in the range from 50 to 150 ⁇ m. Furthermore, the highest thermal conductivity values can be achieved by using Ag at a content of 20 to 30 vol.%.
  • the components are advantageously coated with Ni, Cu, Au or Ag or an alloy of these metals and subsequently soldered to a ceramic frame, for example Al 2 O 3 or AIN.
  • a ceramic frame for example Al 2 O 3 or AIN.
  • a wide variety of processes can be used for the production. It is possible to compact silicon powder coated with silicon carbide with Ag, Au or Al under temperature and pressure. This can be done, for example, in hot presses or hot isostatic presses. Infiltration has proven to be particularly advantageous.
  • a precursor or intermediate is produced which can contain a binder in addition to diamond powder. Binders which pyrolyze to a high degree under the influence of temperature are particularly advantageous. Advantageous binder contents are 1 to 20% by weight. Diamond powder and binder are mixed in conventional mixers or mills.
  • shaping which can be carried out by pouring into a mold or with pressure support, for example by pressing or metal powder injection molding.
  • the intermediate substance is subsequently heated to a temperature at which the binder at least partially pyrolyzes.
  • the pyrolysis of the binder can also take place during the heating up in the infiltration process.
  • the infiltration process can be pressure-free or pressure-supported. The latter is commonly referred to as squezze casting.
  • a foil made of an Ag-Si, Au-Si or Al-Si alloy with an Si content of ⁇ 50% by weight is advantageously used as the infiltration material.
  • the liquidus temperature of the respective alloy is not higher than 1200 ° C, advantageously not higher than 1000 ° C, since otherwise excessive diamond components will decompose.
  • Films with a eutectic composition are particularly suitable for infiltration.
  • the composite material according to the invention can also be used as a heat sink in other areas of application, for example in the field of aerospace or engine construction. The invention is explained in more detail below by means of production examples.
  • Natural diamond powder of quality IIA (Micron + SND from Element Six GmbH) with an average grain size of 40 - 80 ⁇ m was mixed with 7% by volume of a binder based on epoxy resin.
  • the precursor or intermediate thus produced was pressed by means of die presses at a pressure of 200 MPa to a plate measuring 35 mm x 35 mm x 5 mm.
  • the pore content of the plate was approximately 15% by volume.
  • this plate was covered with a foil made of an eutectic Ag-Si alloy, the Si content being 11 atomic% and heated to a temperature of 860 ° C. in a vacuum oven for infiltration, the holding time being 15 minutes scam.
  • the volume contents of the phases present were determined by means of quantitative metallography.
  • the value for silicon carbide was about 2% by volume, the silicon carbide largely enveloping the diamond grains evenly. Due to the thin layer thickness of this silicon carbide coating, the modification of the silicon carbide phase could not be determined.
  • the structure consists of an Ag-rich phase with embedded Si precipitates, which have formed through the eutectic conversion.
  • the volume fraction of the Ag-rich phase was approximately 12%, that of Si approximately 1%.
  • no other constituents could be detected by means of EDX, so that, based on the detection limit, it can be assumed that the Ag content is greater than 99 atom%.
  • Thermal expansion coefficients were processed by laser and EDM. An average value of 450 W / (mK) was measured for the thermal conductivity at room temperature. The determination of the coefficient of thermal expansion gave an average value of 8.5 10 "6 K " 1 .
  • Example 3 synthetic diamond powder of Micron + MDA quality from Element Six GmbH and an average grain size of 40 - 80 ⁇ m was processed. Processing was carried out as described in Example 1. The average thermal conductivity at room temperature of the composite material produced in this way was 410 W / (mK), the average coefficient of thermal expansion 9.0 10 "6 K " 1 .
  • Example 3 The average thermal conductivity at room temperature of the composite material produced in this way was 410 W / (mK), the average coefficient of thermal expansion 9.0 10 "6 K " 1 .
  • Example 4 Synthetic diamond powder of the Micron + MDA quality from Element Six GmbH with an average grain fraction of 40-80 ⁇ m was processed in accordance with Example 3, but without a holding phase being carried out at about 400 ° C. for 15 minutes while cooling from the infiltration temperature.
  • the average thermal conductivity at room temperature of the composite material produced in this way was 440 W / (mK), the average coefficient of thermal expansion 8.5 10 "6 K " 1 .

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JP2006245568A (ja) * 2005-03-02 2006-09-14 Mitac Technology Corp 半導体チップ冷却システム及び冷却装置構造と製造方法
US7504148B2 (en) 2005-03-03 2009-03-17 Mitac Technology Corp Printed circuit board structure and manufacturing method thereof
US8575625B2 (en) 2010-02-08 2013-11-05 A.L.M.T. Corp. Semiconductor element mounting member, method of producing the same, and semiconductor device
WO2019201588A1 (de) * 2018-04-18 2019-10-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. WERKSTOFF BESTEHEND AUS EINEM DREIDIMENSIONALEN GERÜST, DAS MIT SiC ODER SiC UND Si3N4 GEBILDET IST UND EINER EDELMETALLLEGIERUNG, IN DER SILICIUM ENTHALTEN IST, GEBILDET, SOWIE EIN VERFAHREN ZU SEINER HERSTELLUNG
CN111304481A (zh) * 2020-02-11 2020-06-19 中南大学 一种金刚石-金属复合材料的熔渗制备工艺及金刚石-金属复合材料

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