WO2004038702A1 - Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus - Google Patents

Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus Download PDF

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Publication number
WO2004038702A1
WO2004038702A1 PCT/JP2003/013471 JP0313471W WO2004038702A1 WO 2004038702 A1 WO2004038702 A1 WO 2004038702A1 JP 0313471 W JP0313471 W JP 0313471W WO 2004038702 A1 WO2004038702 A1 WO 2004038702A1
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WO
WIPO (PCT)
Prior art keywords
layer
metal
oriented
magnetic recording
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2003/013471
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English (en)
French (fr)
Inventor
Nobuhiro Yasui
Tohru Den
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
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Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to AU2003274736A priority Critical patent/AU2003274736A1/en
Priority to US10/532,232 priority patent/US7510780B2/en
Publication of WO2004038702A1 publication Critical patent/WO2004038702A1/en
Anticipated expiration legal-status Critical
Priority to US12/401,677 priority patent/US8003238B2/en
Ceased legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated
    • C23C14/024Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025Metallic sublayers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62Record carriers characterised by the selection of the material
    • G11B5/73Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7369Two or more non-magnetic underlayers, e.g. seed layers or barrier layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/11Magnetic recording head
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12493Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771Transition metal-base component
    • Y10T428/12861Group VIII or IB metal-base component

Definitions

  • the present invention relates to a structured material having an oriented layer, which is more specifically adapted for use for example in a vertical magnetic recording medium or the like.
  • An oriented film of a noble metal is currently attracting attention, for controlling an orientation of a recording layer in a vertical magnetic recording medium for the next generation, or as an electrode layer or an undercoat layer for controlling an orientation of a ferroelectric oxide in a ferroelectride oxide device.
  • a (001) oriented layer of Pt, Pd or Ir is considered important .
  • the present invention provides a novel oriented film and a prodution method thereof, not requiring a high temperature of the substrate.
  • the present invention provides a structured material composed by including a noble metal, comprising an oriented film provided on a layer containing a Group 4A metal.
  • the present invention also provides a magnetic recording medium including, on a substrate and in order from the substrate side, a MgO (001) layer, a layer containing a Group 4A metal, an oriented layer and a recording layer.
  • the present invention also provides a method for producing a structured material, comprising a first step of preparing a member having an MgO (001) layer, a second step of forming a layer containing a Group 4A metal on the MgO (001) layer, and a third step of forming an oriented layer composed by including a noble metal on the layer containing the Group 4A metal .
  • the present invention further provides a magnetic head capable of conducting magnetic recording on a magnetic recording medium including, on a substrate and from the side thereof, a MgO (001) layer, a layer containing a Group 4A metal, an oriented layer and a recording layer, and a magnetic recording/reproducing apparatus provided with a magnetic head drive section for driving such magnetic head.
  • a magnetic head capable of conducting magnetic recording on a magnetic recording medium including, on a substrate and from the side thereof, a MgO (001) layer, a layer containing a Group 4A metal, an oriented layer and a recording layer, and a magnetic recording/reproducing apparatus provided with a magnetic head drive section for driving such magnetic head.
  • FIG. 1 is a schematic view showing an embodiment of a noble metal oriented layer of the present invention
  • Fig. 2 is a schematic view showing a magnetic recording medium utilizing a noble metal oriented layer
  • Figs. 3A and 3B are schematic view of a recording layer
  • Fig. 4 is a conceptual view showing a magnetic recording/reproducing apparatus
  • Fig. 5 is a conceptual view of an information processing apparatus.
  • Fig. 1 is a schematic view showing the configuration of a structured material of the present invention.
  • An oriented layer 13 of the invention composed by including a noble metal, is characterized in that it is provided on a MgO (001) layer 11 through a Group 4A metal containing layer 12.
  • MgO layer 11 and Group 4A metal containing layer 12 may be collectively called a multi-layered film, a multi-layered functional film or a multi- layered oriented film.
  • a substrate 10 a MgO (001) layer 11, an orientation control layer (layer containing a Group 4A metal) 12, and an oriented layer 13 composed by including a noble metal.
  • the substrate 10 may be arranged under the MgO layer according to the necessity, and may be composed of any material such as glass that can withstand heating to about 250°C.
  • the MgO (001) layer 11 may be formed as a bulk member or a thin film. However, in case of a thin film, it is necessary to prepare a film having the (001) orientation for example by sputtering. In case of utilizing a bulk member, it is naturally possible to dispense with the aforementioned substrate.
  • the orientation control layer (Group 4A metal layer) 12 preferably has a thickness of 0.1 to 3.0 nm, particularly preferably 0.4 to 1.0 nm. Consequently, in case the orientation control layer (Group 4A metal layer) 12 is extremely thin, it may not be a complete film but can also be dispersed in an island shape or shaped as a pattern on the MgO (001) layer 11. Also in the orientation control layer (Group 4A metal layer) 12, it is possible to employ Ti, Zr, Hf or a combination thereof. In particular, Ti is preferred. Also it may be formed in a multi-layered configuration . Also for the noble metal oriented layer 13, it is possible to use Pt, Pd, Ir, Rh, Ag or a combination thereof.
  • the oriented layer of the present invention is characterized in that it can be sufficiently oriented at a temperature lower than 600°C, for example at a heating temperature range of 300°C or lower. Naturally an oriented state can be obtained also at a higher temperature range.
  • the degree of orientation of the noble metal oriented layer 13 is indicated by the intensity ratio of X-ray diffractions of Pt (002) and Pt (111) . More specifically it is represented by:
  • the degree of orientation of the noble metal oriented layer of the present invention is not particularly restricted as long as such oriented layer can be practically applied to a device utilizing such oriented layer, but it is preferred that the degree of orientation represented by the equation [1] is 99% or higher.
  • the noble metal oriented layer need not be composed singly of Pt, Pd, Ir, Rh or Ag, but may be formed by a mixture such as PtPd or may include other elements such as Ti, Zr, Hf etc. Also there may naturally be adopted a multi-layered configuration containing such noble metal.
  • a soft magnetic layer, a protective layer and a lubricant layer are preferably applied when necessary, and there will be explained a configuration incorporating all these layers.
  • a substrate 10 a soft magnetic layer 21, a MgO (001) layer 11, an orientation control layer (Group 4A metal layer) 12, a noble metal oriented film layer 13, a recording layer 22, a protective layer 23, and a lubricant layer 24.
  • the substrate 10 there can be employed a flat substrate such as a glass substrate or an aluminum substrate for a hard disk.
  • the soft magnetic layer 21 is required, in a vertical magnetic recording, in order to concentrate a magnetic field from a head to the recording layer 22.
  • the layers 11 to 13 are utilized for attaining orientation of a hard magnetic material formed for example by Ll 0 :CoPt or Ll 0 :FePt of the recording layer 22.
  • the protective layer 23 and the lubricant layer 24 are utilized for improving resistance to the friction and the abrasion between the head and the medium.
  • the soft magnetic layer 21 is preferably of a high magnetic permeability such as NiFe or FeCo, but, in consideration of noise generation resulting from magnetic wall displacement, there is preferred a material capable of separating a magnetic member thereby to fix the magnetic wall, such as FeTaC.
  • the recording layer 22 is preferably orientation controlled by the effect of the oriented film including the noble metal. Particularly in a production by an electroplating method, the effect of the oriented film including the noble metal is conspicuous. Also the recording layer 22 is preferably in a state in which a rod-shaped magnetic material of a diameter of 3 to 10 nm is uniformly dispersed in a non-magnetic material. In such situation, the magnetic material is preferably composed of a material of a high vertical magnetic anisotropy such as Ll 0 :CoPt, Ll 0 :FePt etc.
  • the magnetic material there can also be conceived a multi-layered film of Co/Pt or Co/Pd in addition to Ll 0 :CoPt, Ll 0 :FePt etc., so that the foregoing examples are not restrictive but the high vertical magnetic anisotropy is an important factor.
  • the manufacture is not limited to the electroplating method, and there can also be employed a film formation in vacuum such as a sputtering method.
  • the protective layer 23 resistance to abrasion is important, and a diamond-like carbon is useful.
  • the film thickness is preferably as thin as possible within such an extent as not to deteriorate the effect.
  • the lubricant layer 24 is provided to attain smooth displacement between the head and the medium, and can be formed by applying a lubricant coat such as perfluoropolyether .
  • a functional element or a functional device having such oriented layer can be a functional element (so-called ferroelectric memory) provided with a ferroelectric film (for example a ferroelectric film or a film of a high dielectric property having a perovskite structure or a layered structure such as of BT, PT, PZT or SBT) on such oriented layer.
  • a ferroelectric film for example a ferroelectric film or a film of a high dielectric property having a perovskite structure or a layered structure such as of BT, PT, PZT or SBT
  • the present example employs Ti for the orientation control layer (Group 4A metal layer) and Pt and Pd as the noble metal, and shows an effect by incorporation of a Ti layer.
  • a MgO substrate was introduced in a sputtering apparatus, and the substrate was heated to 300°C. . .
  • Argon was introduced from a basic pressure of 4.0 x 10 ⁇ 5 Pa, and after a reverse sputtering for 120 seconds with an RF power of 150 W and a pressure of 7.0 x 10 "1 Pa, a Ti film was formed with a thickness of 4.5 A and an RF power of 150 W.
  • a Pt, and Pd layers was formed with a thickness of 20 nm and an RF power of 300 W.
  • the Ti layer need not be a complete film, and the described film thickness is a value when converted into a film.
  • This examples shows how an orientation of a noble metal, particularly Pt, is possible at low temperatures .
  • a MgO substrate was introduced in a sputtering apparatus, and the substrate was heated with four temperature conditions of room temperature, 200°C, 250°C and 300°C.
  • argon was introduced from a back pressure of 4.0 10 ⁇ 5 Pa, and, after a reverse sputtering for 120 seconds with an RF power of 150 W and a pressure of 7.0 10 "1 Pa, a Ti film was formed with a thickness of 4.5 A and an RF power of 150 W.
  • a Pt layer was formed with a thickness of 20 nm and an RF power of 300 W.
  • the above-mentioned temperature is a temperature of the substrate, but can be considered substantially equal to the temperature of the Group A4 metal layer. (Example 3) This example relates to a magnetic recording medium utilizing the aforementioned noble metal oriented film.
  • a glass substrate for a hard disk on which a soft magnetic layer was formed with a thickness of 300 nm and a MgO (001) layer was formed thereon with a thickness of 3 nm. Then a Ti layer of a thickness of 0.45 nm and a Pt layer of a thickness of 5 nm were formed under the sputtering conditions of the substrate temperature of 250°C in Example 2, thereby obtaining a noble metal oriented film.
  • the cylinders of Ll 0 :FePt in the recording layer had a diameter of 5 to 6 nm.
  • the recording layer was formed by a method of electroplating with FePt the silicon oxide film with fine pores of 5 to 6 nm utilizing Pt of the noble metal oriented film as an electrode layer, and then executing thermal treatment to obtain a finely dispersed cylinders of Ll 0 :FePt.
  • the cylinders of Ll 0 :FePt were also oriented in the (001) direction.
  • a similar medium was also prepared utilizing a Pt layer of (111) orientation instead of the noble metal oriented film.
  • the cylinders of Ll 0 :FePt were oriented in the (111) direction.
  • the sample utilizing the noble metal oriented film of Pt (001) showed a high vertical magnetic anisotropy in ' the direction perpendicular to the substrate, with a squareness ratio of 0.95 in an M-H curve, but the sample utilizing the Pt (111) film showed a squareness ratio of about 0.5 in the M-H curve, both in the in-plate and in the vertical directions. It was therefore confirmed that the sample employing the noble metal oriented film of Pt (001) was usable as a vertical magnetic recording medium.
  • the formation of the recording layer is not limited to the method explained in the foregoing, but can also be attained for example by sputtering a multi-layered film of Co/Pt or Co/Pd in an oriented state on a noble metal oriented film. It is also possible to form a granular film of Ll 0 :FePt or Ll 0 :CoPt.
  • Example 4 provides a magnetic recording apparatus of a configuration as schematically shown in Fig. 4.
  • a magnetic material in the recording layer is oriented by the noble metal oriented film, and information can be recorded by the magnetizing direction of a plurality of cylindrical magnetic materials.
  • a magnetic recording apparatus can be constructed by incorporating the recording medium of the present invention in an apparatus including a magnetic medium driving section 42, a magnetic head 43, a magnetic head drive section 44 and a signal processing section 45.
  • the present example does not limit the drive of the magnetic recording medium to a rotational motion only, nor the drive of the magnetic head to a circumferential sliding motion only.
  • the present example relates to an information processing apparatus.
  • the magnetic recording/reproducing apparatus described in Example 4 is capable of information input and output, it is possible to construct an information processing apparatus including, within a casing 51, the aforementioned magnetic recording/reproducing apparatus section 52, a memory section 54, a processing section 53, an external input/output section 56, a power source 55 and connecting wirings 57. Also it is naturally possible to construct an information processing apparatus by externally (or internally) connecting the aforementioned magnetic recording/reproducing apparatus with a computer including a CPU.
  • the present invention allows to provide, in forming a noble metal oriented layer including a noble metal and having a (001) orientation, an oriented layer which can be formed at a low temperature less than 600°C by providing a layer including a Group 4A metal.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
PCT/JP2003/013471 2002-10-23 2003-10-22 Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus Ceased WO2004038702A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003274736A AU2003274736A1 (en) 2002-10-23 2003-10-22 Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus
US10/532,232 US7510780B2 (en) 2002-10-23 2003-10-22 Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus
US12/401,677 US8003238B2 (en) 2002-10-23 2009-03-11 Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002-308367 2002-10-23
JP2002308367A JP4136590B2 (ja) 2002-10-23 2002-10-23 配向膜、配向膜を利用した磁気記録媒体、及び磁気記録再生装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10532232 A-371-Of-International 2003-10-22
US12/401,677 Division US8003238B2 (en) 2002-10-23 2009-03-11 Structured material, magnetic recording medium utilizing the same, and magnetic recording/reproducing apparatus

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JP (1) JP4136590B2 (enExample)
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WO (1) WO2004038702A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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EP1801790A1 (en) 2005-12-21 2007-06-27 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording disk with ultrathin nucleation film and method for making the disk
US7386200B2 (en) 2002-12-11 2008-06-10 Canon Kabushiki Kaisha Photonic circuit board
US7892664B2 (en) * 2007-11-28 2011-02-22 Seagate Technology Llc Magnetic recording media having a chemically ordered magnetic layer

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JP4405485B2 (ja) 2006-08-02 2010-01-27 株式会社東芝 磁性体膜および磁性体膜の製造方法
US20080057350A1 (en) * 2006-09-01 2008-03-06 Heraeus, Inc. Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds
JP2008159141A (ja) * 2006-12-22 2008-07-10 Canon Inc 磁気記録再生装置及び情報処理装置
CN103534757B (zh) * 2011-05-17 2016-08-17 昭和电工株式会社 磁记录介质及其制造方法以及磁记录再生装置
US8609263B1 (en) * 2011-05-20 2013-12-17 WD Media, LLC Systems and methods for forming magnetic media with an underlayer

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JP2001023140A (ja) * 1999-07-06 2001-01-26 Hitachi Ltd 垂直磁気記録媒体および磁気記憶装置
EP1186580A2 (en) * 2000-08-31 2002-03-13 Sumitomo Electric Industries, Ltd. A cutting tool of a surface-coated boron nitride sintered compact
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7386200B2 (en) 2002-12-11 2008-06-10 Canon Kabushiki Kaisha Photonic circuit board
EP1801790A1 (en) 2005-12-21 2007-06-27 Hitachi Global Storage Technologies Netherlands B.V. Perpendicular magnetic recording disk with ultrathin nucleation film and method for making the disk
US7892664B2 (en) * 2007-11-28 2011-02-22 Seagate Technology Llc Magnetic recording media having a chemically ordered magnetic layer

Also Published As

Publication number Publication date
AU2003274736A1 (en) 2004-05-13
US20060040118A1 (en) 2006-02-23
JP4136590B2 (ja) 2008-08-20
US7510780B2 (en) 2009-03-31
US8003238B2 (en) 2011-08-23
JP2004145946A (ja) 2004-05-20
US20090176128A1 (en) 2009-07-09

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