WO2004003936A1 - 可動電気回路用導電体および振動式ジャイロ - Google Patents
可動電気回路用導電体および振動式ジャイロ Download PDFInfo
- Publication number
- WO2004003936A1 WO2004003936A1 PCT/JP2003/008065 JP0308065W WO2004003936A1 WO 2004003936 A1 WO2004003936 A1 WO 2004003936A1 JP 0308065 W JP0308065 W JP 0308065W WO 2004003936 A1 WO2004003936 A1 WO 2004003936A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductor
- electric circuit
- movable electric
- crystal grains
- sectional area
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/02—Alloys based on aluminium with silicon as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/12—Alloys based on aluminium with copper as the next major constituent
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
Definitions
- the present invention relates to a conductor used for an electric circuit (hereinafter, referred to as a movable electric circuit) disposed on a movable body on the assumption that its shape changes during operation, and a vibrating gyro mouth using the same for a wiring pattern.
- a conductor used for an electric circuit hereinafter, referred to as a movable electric circuit
- Silicon is used as the most typical substrate material in semiconductor devices, especially semiconductor integrated circuits (ICs), microelectronic devices, or precision measurement devices.
- ICs semiconductor integrated circuits
- microelectronic devices or precision measurement devices.
- a large number of devices are formed on a single silicon wafer in a state where they are electrically isolated from each other.
- the isolation required for this device characteristic is achieved by forming an oxide film of about 0.3 to 1.0 ⁇ m on the wafer.
- a ring-type vibrating gyroscope see, for example, Japanese Patent Application Laid-Open No. 10-267667.
- the ring-shaped vibrating gyro is sensitive to external stress, such as a piezoelectric gyro, which is a type of vibrating gyro. Since there is no fixed fulcrum, and elliptical vibration is hardly affected by external stress, it has the feature that angular velocity can be detected with high accuracy.
- FIG. 1 is a diagram showing a silicon substrate in a ring-shaped vibrating jar opening
- FIG. 2 is a diagram showing a wiring pattern provided on a ring.
- the silicon substrate 1 has a configuration in which, for example, a ring 1-1 in the center is suspended in a suspended state by eight suspensions 1-2.
- an insulating film 3 is formed on a single-crystal silicon wafer 2 which is thinner than that for an integrated circuit such as a normal CPU. Is used.
- the ring type vibrator forms a track (wiring pattern) 4 by photolithography and chemical etching after forming a conductive film for wiring such as A1-Si on the insulating film 3 by, for example, sputtering. It is manufactured by forming Ring 1-1 and Suspension 1-2 by ICP (Inductively Coupled Plasma) etching.
- ICP Inductively Coupled Plasma
- the track 4 provided on the ring 1-1 and the suspension 1-2 receives an alternating current in the circumferential direction and receives a magnetic field by a magnetic circuit (not shown) in the vertical direction, so that the Lorentz force is generated. Deforms it into an elliptical shape (this is called vibration mode 1).
- vibration mode 1 When an angular velocity is given to the elliptical vibration of the ring 1-1 by adjusting the phase of the current flowing through the suspension 1-2, Corioliser acts on the vibration mode 1 and a new 45 ° from vibration mode 1 Vibration mode 2 occurs at the shifted position. By monitoring the dead point (node) of vibration mode 1 where vibration mode 2 occurs, the angular velocity can be known.
- Drift means that the signal from the gyro mouth changes as if it were rotating, even though the ring is actually stationary. The smaller the drift, the better the gyro performance Is good. Drift The unit of is expressed by the apparent angular velocity [(deg / sec) / hr] detected as rotating per unit time (usually per hour). The appropriate value varies depending on the application, but is, for example, 0.05 (deg / sec) / hr or less in the case of a gyro used for vibration control or the like.
- Drift is an extremely important index for ensuring the performance according to the purpose of use of the gyro, but the value also varies in gyros made using the same material.
- the present inventor has found from research conducted on this cause that the crystal grain of the conductive film for wiring is relatively large in a sample having a large drift.
- FIG. 3 is a diagram showing a metal structure of a conductive film for wiring of a vibrating gyro
- FIG. 1 shows a structure diagram of a conductive film for wiring. This figure is a trace of an EBSP image of a part of each conductive film for wiring. As shown in Fig. 3, the grain size of the sample with small drift is smaller than that of the sample with large drift.
- the conductivity of wiring used in a semiconductor device is better when crystal grains are larger.
- the main reason for this is that if the crystal grains of the wiring are small, the number of grain boundaries increases, which becomes a resistance and hinders the movement of free electrons.
- the present invention provides a conductor that is optimal for an electric circuit disposed on a movable body on the assumption that the shape of the electric circuit itself changes during circuit operation, and a vibrating gyro using this conductor as a wiring pattern. It is intended to provide.
- the present inventor has completed studies on a movable electric circuit, particularly a vibrating gyro, in order to reduce the crystal grains of the wiring pattern thereof, and as a result, completed the present invention.
- the gist of the present invention is a conductor for a movable electric circuit shown in (1) below and a vibrating gyro mouth shown in (2).
- This conductor preferably contains N + O: 550 to 20000 ppm in atomic concentration. It is also desirable to contain one or more of S: 0.5 to 5.0%, Ta: 0.5 to 5.0%, and Cu: 0.5 to 5.0% in atomic concentration. Particularly desirable are those containing 0.5 to 5.0% Nd in atomic concentration.
- FIG. 1 is a diagram showing a silicon substrate in a ring-type vibrating gyro.
- FIG. 2 is a diagram showing a wiring pattern provided on the ring.
- FIG. 3 is a diagram showing the metallographic structure of the wiring conductive film of the vibrating gyro.
- A shows the structure of the wiring conductive film of the sample having a small drift.
- (b) shows an organization diagram of a wiring conductive film of a sample having a large drift.
- FIG. 4 is a diagram showing the relationship between the average cross-sectional area of crystal grains and drift.
- Fig. 5 is a backscattered electron diffraction image (EBSP) of the upper surface of the conductor mainly composed of A1.
- A shows a conductor containing 1.0% of Si and 499ppm of N + O.
- B shows a conductor containing 1.0% of Si and 4817ppm of N + O
- (c) shows a conductor containing 2.0% of Nd.
- EBSP backscattered electron diffraction image
- Figure 6 is a structural photograph obtained by photographing the thickness direction of the cross section of the conductor consisting mainly of A1 using a transmission electron microscope (TEM),
- TEM transmission electron microscope
- (a) is Si: a 499ppm: 1.0% and N + O
- (B) shows a conductor containing Si: 1.0% and N + O: 4817 ppm
- (c) shows a conductor containing Nd: 2.0%.
- the subject of the present invention is a conductor for a movable electric circuit mainly composed of A1.
- This movable electric circuit conductor is effective, for example, when used as a wiring pattern of a vibrating gyro.
- the conductor for a movable electric circuit mainly composed of A1 means an A1-based conductor used for an electric circuit disposed on the movable body on the assumption that its shape changes during operation.
- ⁇ is the proportionality constant
- d is the crystal It means the diameter of a grain.
- FIG. 4 is a diagram showing the relationship between the average cross-sectional area of the crystal grains and the drift.
- the average cross-sectional area of the crystal grains when the average cross-sectional area of the crystal grains is less than 1 mu m z, it is possible to control the drilling oice below 0.05 (deg / sec) / hr . Therefore, the average cross-sectional area of the crystal grains was limited to 1 ⁇ m 2 or less. From the viewpoint of the drift, the smaller the average cross-sectional area of the crystal grains, the better, and particularly, 0.5 m 2 or less.
- the lower limit of the average cross-sectional area of the crystal grains is not particularly defined, in the case of less than 0.00008 m 2 is conductivity resistivity becomes too large to degradation. For this reason, it is desirable that the average cross-sectional area of the crystal grains be 0.00008 ⁇ 2 or more.
- Average cross-sectional area of crystal grains can be determined by the following procedure.
- N and O are elements present as impurities in a conductor, and when these elements are present in a conductor in a large amount, the crystal grain size is reduced and the grain boundaries are increased, so that the electric resistance is increased. For this reason, it is desired to reduce the content of these elements as much as possible in conductors used in ordinary electric circuits. Therefore, in a general semiconductor wiring in which the shape of the electric circuit itself does not change during circuit operation, the content of N or O is 10 ppm or less.
- the ⁇ N + 0 '' contained in the conductor mainly composed of A1 is less than 550 ppm, the generation of A1 nitride and A1 oxide is insufficient, so that the size of the crystal grains is sufficiently small. Can not do it. For this reason, although the conductivity is good, the mechanical strength of the conductor itself tends to change during the operation of the circuit. If “N + 0” exceeds 20000 ppm, A1 nitrides are formed and the specific resistance tends to increase. In addition, it is necessary to increase the concentration of N 2 and O 2 mixed with Ar introduced into the vacuum deposition chamber, which is disadvantageous in terms of process efficiency.
- the smooth operability of the conductor itself is likely to be impaired.
- this conductor when this conductor is used for a wiring pattern of a vibrating gyroscope, the drift increases. Such a vibrating gyro may not be used for applications requiring high accuracy.
- the conductor for a movable electric circuit of the present invention contains N + O: 550 to 20000 ppm in atomic concentration. More desirable is N + O: 600 to 18000 ppm.
- the conductor for a movable electric circuit according to the present invention is mainly composed of A1; + O: 550 to 20000 ppm, and may further contain one or more of Si: 0.5 to 5.0%, Ta: 0.5 to 5.0%, and Cu: 0.5 to 5.0%.
- Si, Ta and Cu are all effective elements for strengthening the solid solution. This effect is remarkable when all elements are contained in 0.5% or more. On the other hand, if any of the elements is contained in excess of 5.0%, precipitates may increase and the mechanical strength may become non-uniform. Therefore, when one or more of these elements are contained, the content is desirably 0.5 to 5.0%, respectively.
- the conductor for a movable electric circuit mainly comprising A1 of the present invention contains Nd: 0.5 to 5.0%.
- Nd is an element that alone has the effect of reducing the size of the crystal grains of A1, and if a conductor containing an appropriate amount of Nd is used, regardless of the content of N (nitrogen) or O (oxygen),
- the average cross section can be 1 ⁇ 2 or less.
- a conductor containing an appropriate amount of Nd is more excellent in that the size of crystal grains in the thickness direction can be reduced as described below. The following is a description with reference to the drawings.
- Fig. 5 is a backscattered electron diffraction image (EBSP) of the upper surface of the conductor mainly composed of A1.
- Fig. 6 shows the thickness of the conductor mainly composed of A1 using a transmission electron microscope (TEM). This is a tissue photograph of a section taken in the vertical direction.
- TEM transmission electron microscope
- a conductor mainly composed of A1 and containing Nd is desirable, and its content is desirably 0.5 to 5.0%. That is, if the Nd content is less than 0.5%, the refinement of A1 crystal grains by Nd is not sufficient, and if it exceeds 5.0%, precipitates are excessively formed and the mechanical strength becomes non-uniform. Therefore, when Nd is contained, its content is desirably 0.5 to 5.0%.
- the crystal grains of the conductor can be made fine regardless of the content of N (nitrogen) and O (oxygen). However, even if N + O is contained in the range of 550 to 20000 ppm, the above effects are not lost. Further, the conductor of the present invention may contain 0.5 to 5.0% of one or more of Si, Ta and Cu together with Nd.
- SIMS secondary ion mass spectrometry
- primary concentration oxygen ion or cesium ion
- concentration is determined in advance.
- a conductor for an electric circuit is produced by depositing a conductor film on a substrate surface using a sputtering device or the like.
- the conductor for a movable electric circuit of the present invention is desirably produced using a DC magnetron sputtering apparatus.
- DC magnetron sputtering is a vacuum formation with a cathode and an anode. With Ar gas or the like sealed in the membrane chamber, cationized Ar or other gas molecules collide with the target (A1 alloy) at high speed by applying a DC voltage of (400 to 500 V) to both electrodes. It is allowed to A1 particles (or, more Si particles, Ta particles, Cu particles or Nd particles) is scattered, (actually, Si O 2 film) silicon substrate silicon substrate A1 alloy film by adhering to the This is a method of vapor deposition on top.
- the concentration of ⁇ and ⁇ in the mixed gas may be set to about 600 to 20000 ppm.
- the heat treatment it is not necessary to perform the heat treatment because the crystal grains may be coarsened.
- the silicon substrate on which the wiring pattern has been formed by the above-described method and the pedestal glass it is necessary to bond the silicon substrate on which the wiring pattern has been formed by the above-described method and the pedestal glass, and this bonding is usually performed using anodic bonding technology.
- the silicon substrate and the base glass are heated to about 420 ° C, and a DC voltage of 600 V is applied for about 30 minutes. For this reason, the conductor is in a state of being subjected to a kind of heat treatment, but a desired crystal grain size can be obtained even after such heat is applied.
- the vibrating gyroscope of the present invention can be manufactured, for example, as follows.
- the vibrating gyro of the present invention has a 7500 After forming a SiO 2 film with a thickness of about A, a conductive film such as an A1-Si alloy is formed on the SiO 2 film according to the method described above, and then, using photolithography and chemical etching, It can be manufactured by forming a wiring pattern of this type and further etching the silicon wafer by ICP etching.
- an A1 alloy conductive film with the chemical composition shown in Table 1 was formed on the SiO 2 film by DC magnetron sputtering. .
- the N and O concentrations in the conductive film were adjusted by changing the N 2 and O 2 concentrations in the mixed gas introduced into the vacuum film formation chamber. .
- Inventive Examples 9 to 11 and Comparative Examples 1 to 3, 7, and 9 were formed by introducing a normal Ar gas.
- a predetermined wiring pattern is formed on a silicon substrate on which conductive films having various chemical compositions are formed using photolithography and chemical etching, and the silicon layer is etched by ICP etching.
- a ring-type vibrator was fabricated, and these were joined and die-bonded under the same conditions to produce a vibrating gyroscope. Twenty-five vibrating gyroscopes were manufactured for each condition.
- the N and O concentrations were measured using the above-described SIMS. Soak drift is 50.
- a vibratory gyroscope was placed in the constant temperature chamber of C, the initial value of the angular velocity output in the stationary state and the value after 4 hours were measured, and the difference was obtained by dividing by 4.
- the crystal grain size was determined as “average cross-sectional area of crystal grains” according to the following procedure.
- Table 1 shows the results.
- ⁇ —J means that Si, Ta, Cu and Nd were not added
- the average cross-sectional area of the crystal grains was ⁇ 2 or less, and the drift force S was 0.012 to 0.048 (deg / sec) / hr.
- the drift was 0.03 (deg / sec) / hr or less, which is more favorable.
- the movable electric circuit conductor of the present invention can increase the degree of freedom of displacement of the electric circuit itself, it is disposed on the movable body on the assumption that the shape of the electric circuit itself changes during circuit operation. It is the best conductor for electrical circuits. In particular, if this conductor is used as a wiring pattern of a vibrating gyro, soak drift can be reduced, and a high-performance vibrating gyro can be provided.
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- Chemical & Material Sciences (AREA)
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- Organic Chemistry (AREA)
- Radar, Positioning & Navigation (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Remote Sensing (AREA)
- Gyroscopes (AREA)
- Pressure Sensors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Audible-Bandwidth Dynamoelectric Transducers Other Than Pickups (AREA)
- Micromachines (AREA)
- Switches Operated By Changes In Physical Conditions (AREA)
- Moving Of Heads (AREA)
- Supporting Of Heads In Record-Carrier Devices (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03738512A EP1521274B1 (en) | 2002-06-28 | 2003-06-25 | Conductor for movable electric circuit and vibration type gyro |
AT03738512T ATE477577T1 (de) | 2002-06-28 | 2003-06-25 | Leiter für eine bewegliche elektrische schaltung und kreisel des vibrationstyps |
AU2003246190A AU2003246190A1 (en) | 2002-06-28 | 2003-06-25 | Conductor for movable electric circuit and vibration type gyro |
JP2004517279A JP3643116B2 (ja) | 2002-06-28 | 2003-06-25 | 可動電気回路用導電膜および振動式ジャイロ |
DE60333756T DE60333756D1 (de) | 2002-06-28 | 2003-06-25 | Leiter für eine bewegliche elektrische schaltung und kreisel des vibrationstyps |
US10/902,592 US7188524B2 (en) | 2002-06-28 | 2004-07-29 | Conductive element for a movable electric circuit and a vibration gyroscope |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-189677 | 2002-06-28 | ||
JP2002189677 | 2002-06-28 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/902,592 Continuation US7188524B2 (en) | 2002-06-28 | 2004-07-29 | Conductive element for a movable electric circuit and a vibration gyroscope |
Publications (1)
Publication Number | Publication Date |
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WO2004003936A1 true WO2004003936A1 (ja) | 2004-01-08 |
Family
ID=29996856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/008065 WO2004003936A1 (ja) | 2002-06-28 | 2003-06-25 | 可動電気回路用導電体および振動式ジャイロ |
Country Status (9)
Country | Link |
---|---|
US (1) | US7188524B2 (ja) |
EP (1) | EP1521274B1 (ja) |
JP (1) | JP3643116B2 (ja) |
CN (1) | CN1272805C (ja) |
AT (1) | ATE477577T1 (ja) |
AU (1) | AU2003246190A1 (ja) |
DE (1) | DE60333756D1 (ja) |
TW (1) | TWI270894B (ja) |
WO (1) | WO2004003936A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007063671A (ja) * | 2006-09-25 | 2007-03-15 | Sumitomo Chemical Co Ltd | 冷間加工材 |
JP2007070733A (ja) * | 2006-10-06 | 2007-03-22 | Sumitomo Chemical Co Ltd | 冷間加工材 |
WO2008078770A1 (ja) * | 2006-12-27 | 2008-07-03 | Dai Nippon Printing Co., Ltd. | 力学量センサおよびその製造方法 |
JP2011528103A (ja) * | 2008-07-12 | 2011-11-10 | アトランティック・イナーシャル・システムズ・リミテッド | 振動構造ジャイロスコープの、又は振動構造ジャイロスコープに関する改良 |
JP2014182138A (ja) * | 2013-03-15 | 2014-09-29 | Analog Devices Inc | 直角位相エラーおよび面外感知モードを検出するための電極構成を備えているxy−軸ジャイロスコープ |
Families Citing this family (6)
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US7281426B1 (en) | 2006-06-15 | 2007-10-16 | Innalabs Technologies, Inc. | Stemless hemispherical resonator gyroscope |
JP4924238B2 (ja) * | 2007-06-26 | 2012-04-25 | 大日本印刷株式会社 | 角速度センサの製造方法 |
JP2009008438A (ja) * | 2007-06-26 | 2009-01-15 | Dainippon Printing Co Ltd | 角速度センサおよびその製造方法 |
EP2163848A1 (en) * | 2008-07-12 | 2010-03-17 | Atlantic Inertial Systems Limited | Improvements in or relating to vibrating structure gyroscopes |
CN109295349A (zh) * | 2018-11-08 | 2019-02-01 | 广东迪奥应用材料科技有限公司 | 一种用于制备高导电率薄膜的铝基合金 |
CN110058041A (zh) * | 2019-04-08 | 2019-07-26 | 瑞声科技(新加坡)有限公司 | 陀螺仪 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0598377A (ja) * | 1991-10-03 | 1993-04-20 | Furukawa Alum Co Ltd | マグネトロン放熱条用アルミニウム合金およびその製造方法 |
JPH11118490A (ja) * | 1997-10-09 | 1999-04-30 | Tokai Rika Co Ltd | Pzt薄膜を備えた振動ジャイロ |
JP2000212664A (ja) * | 1999-01-22 | 2000-08-02 | Furukawa Electric Co Ltd:The | Al合金製自動車用導電体 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1475330A (en) * | 1970-07-13 | 1977-06-01 | Southwire Co | Aluminum alloy used for electrical conductors and other articles and method of making same |
GB1510940A (en) * | 1975-12-09 | 1978-05-17 | Southwire Co | Aluminium-iron-nickel alloy electrical conductor |
JPH04128336A (ja) | 1990-09-18 | 1992-04-28 | Kobe Steel Ltd | 高強度高導電性アルミニウム合金およびその製造方法 |
KR960001601B1 (ko) * | 1992-01-23 | 1996-02-02 | 삼성전자주식회사 | 반도체 장치의 접촉구 매몰방법 및 구조 |
FR2732467B1 (fr) * | 1995-02-10 | 1999-09-17 | Bosch Gmbh Robert | Capteur d'acceleration et procede de fabrication d'un tel capteur |
US5942054A (en) * | 1995-12-22 | 1999-08-24 | Texas Instruments Incorporated | Micromechanical device with reduced load relaxation |
GB2322196B (en) * | 1997-02-18 | 2000-10-18 | British Aerospace | A vibrating structure gyroscope |
US6592812B1 (en) * | 1999-08-19 | 2003-07-15 | Mitsui Mining & Smelting Co., Ltd. | Aluminum alloy thin film target material and method for forming thin film using the same |
US6555204B1 (en) * | 2000-03-14 | 2003-04-29 | International Business Machines Corporation | Method of preventing bridging between polycrystalline micro-scale features |
-
2003
- 2003-06-25 CN CNB038008025A patent/CN1272805C/zh not_active Expired - Lifetime
- 2003-06-25 DE DE60333756T patent/DE60333756D1/de not_active Expired - Lifetime
- 2003-06-25 AT AT03738512T patent/ATE477577T1/de not_active IP Right Cessation
- 2003-06-25 AU AU2003246190A patent/AU2003246190A1/en not_active Abandoned
- 2003-06-25 JP JP2004517279A patent/JP3643116B2/ja not_active Expired - Lifetime
- 2003-06-25 WO PCT/JP2003/008065 patent/WO2004003936A1/ja active Application Filing
- 2003-06-25 EP EP03738512A patent/EP1521274B1/en not_active Expired - Lifetime
- 2003-06-27 TW TW092117722A patent/TWI270894B/zh not_active IP Right Cessation
-
2004
- 2004-07-29 US US10/902,592 patent/US7188524B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0598377A (ja) * | 1991-10-03 | 1993-04-20 | Furukawa Alum Co Ltd | マグネトロン放熱条用アルミニウム合金およびその製造方法 |
JPH11118490A (ja) * | 1997-10-09 | 1999-04-30 | Tokai Rika Co Ltd | Pzt薄膜を備えた振動ジャイロ |
JP2000212664A (ja) * | 1999-01-22 | 2000-08-02 | Furukawa Electric Co Ltd:The | Al合金製自動車用導電体 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007063671A (ja) * | 2006-09-25 | 2007-03-15 | Sumitomo Chemical Co Ltd | 冷間加工材 |
JP2007070733A (ja) * | 2006-10-06 | 2007-03-22 | Sumitomo Chemical Co Ltd | 冷間加工材 |
WO2008078770A1 (ja) * | 2006-12-27 | 2008-07-03 | Dai Nippon Printing Co., Ltd. | 力学量センサおよびその製造方法 |
JPWO2008078770A1 (ja) * | 2006-12-27 | 2010-04-30 | 大日本印刷株式会社 | 力学量センサおよびその製造方法 |
US8216870B2 (en) | 2006-12-27 | 2012-07-10 | Dai Nippon Printing Co., Ltd. | Mechanical quantity sensor and method of manufacturing the same |
JP5176965B2 (ja) * | 2006-12-27 | 2013-04-03 | 大日本印刷株式会社 | 力学量センサの製造方法 |
JP2011528103A (ja) * | 2008-07-12 | 2011-11-10 | アトランティック・イナーシャル・システムズ・リミテッド | 振動構造ジャイロスコープの、又は振動構造ジャイロスコープに関する改良 |
JP2014182138A (ja) * | 2013-03-15 | 2014-09-29 | Analog Devices Inc | 直角位相エラーおよび面外感知モードを検出するための電極構成を備えているxy−軸ジャイロスコープ |
Also Published As
Publication number | Publication date |
---|---|
US7188524B2 (en) | 2007-03-13 |
TW200401308A (en) | 2004-01-16 |
US20050000285A1 (en) | 2005-01-06 |
TWI270894B (en) | 2007-01-11 |
CN1272805C (zh) | 2006-08-30 |
EP1521274B1 (en) | 2010-08-11 |
EP1521274A1 (en) | 2005-04-06 |
AU2003246190A1 (en) | 2004-01-19 |
DE60333756D1 (de) | 2010-09-23 |
EP1521274A4 (en) | 2006-06-21 |
ATE477577T1 (de) | 2010-08-15 |
JP3643116B2 (ja) | 2005-04-27 |
JPWO2004003936A1 (ja) | 2005-11-04 |
CN1545710A (zh) | 2004-11-10 |
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