WO2003094584A1 - Verfahren zur erzeugung einer grabenstruktur in einem polymer-substrat - Google Patents
Verfahren zur erzeugung einer grabenstruktur in einem polymer-substrat Download PDFInfo
- Publication number
- WO2003094584A1 WO2003094584A1 PCT/DE2003/001065 DE0301065W WO03094584A1 WO 2003094584 A1 WO2003094584 A1 WO 2003094584A1 DE 0301065 W DE0301065 W DE 0301065W WO 03094584 A1 WO03094584 A1 WO 03094584A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- laser
- substrate
- laser beam
- mask
- recesses
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 229920000307 polymer substrate Polymers 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 15
- 229920000642 polymer Polymers 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 claims 1
- 239000011151 fibre-reinforced plastic Substances 0.000 claims 1
- 239000003365 glass fiber Substances 0.000 abstract description 10
- 230000002787 reinforcement Effects 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
- B23K26/0661—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks disposed on the workpiece
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0216—Reduction of cross-talk, noise or electromagnetic interference
- H05K1/0218—Reduction of cross-talk, noise or electromagnetic interference by printed shielding conductors, ground planes or power plane
- H05K1/0219—Printed shielding conductors for shielding around or between signal conductors, e.g. coplanar or coaxial printed shielding conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0366—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement reinforced, e.g. by fibres, fabrics
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0388—Other aspects of conductors
- H05K2201/0394—Conductor crossing over a hole in the substrate or a gap between two separate substrate parts
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/09036—Recesses or grooves in insulating substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09981—Metallised walls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0548—Masks
- H05K2203/0554—Metal used as mask for etching vias, e.g. by laser ablation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
- H05K2203/108—Using a plurality of lasers or laser light with a plurality of wavelengths
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
- H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
Definitions
- the invention relates to a method for producing a Gra ⁇ b en Design in the surface of a polymer substrate by irradiation with a laser of a predetermined wavelength.
- WO 00/16443 discloses the production of hole and trench structures in printed circuit boards, such trench structures being used, for example, to form shielded conductor structures in the printed circuit boards.
- the use of a laser is generally mentioned as a means of producing such trenches in a circuit board.
- Object of the present invention is therefore to provide a method with which grave structures with clean pages ⁇ walls and an acceptable slope in polymer substrates, particularly those with glass fiber reinforcement, can be obtained.
- a conformal mask made of a material reflecting the laser radiation is arranged on the surface of the substrate and has cutouts corresponding to the trench structure to be produced, and then the laser beam is guided over the cutouts of the mask, at least once in such a manner overlapping over the Boundary edge of the respective recess is guided such that the energy density of the portion of the laser beam striking the polymer surface lies at every point above a threshold at which the substrate material is completely removed.
- a conforming mask is used in each case in the edge region of the one to be generated
- the invention can be used particularly advantageously in the production of trench structures in a substrate reinforced with glass fibers, the mask then shielding that edge region of the laser beam which is below the energy threshold necessary for the evaporation of the glass fiber material, which for example has a peak power density of about 1-10 MW / cm 2 , preferably 6-7 MW / cm 2 , depending on the material.
- a laser is preferably used for producing the trench structure, the wavelength of which is strongly reflected on the mask layer, preferably consisting of copper or a copper alloy. In this case, the laser beam can be focused directly on the surface of the substrate.
- Lasers with a wavelength of 9 .mu.m to 11 .mu.m are preferably used, in particular a Q-switched CO 2 laser with a pulse frequency of 10 to 200 kHz, preferably of approximately 100 kHz, and a pulse duration of 50 to 500 ns, preferably approximately 150 ns.
- a high-frequency (RF excited) pulsed C0 2 laser with a pulse frequency between 1 and 15 kHz, preferably between 3 and 5 kHz, and a pulse duration between 1 and 20 ⁇ s, preferably between 3 and 5 ⁇ s ,
- a TEA-CO 2 laser transversely excited atmospheric laser with a pulse frequency between 1 and 15 kHz and a pulse duration between 50 and 100 ns, preferably about 70 ns, can also be used.
- UV laser instead of the C0 2 laser, other lasers can also be used. It would even be possible to use a UV laser if it is available with sufficient power and an acceptable working speed. Since, for example, such a UV laser is only slightly reflected by a mask layer made of copper, it must not be focused directly on the level of the mask or the substrate surface.
- the mask used in the invention is preferably a metal layer applied to the surface of the substrate, which, as mentioned, preferably consists of copper or a copper alloy.
- This metal layer can be formed by chemical or galvanic deposition on the surface of the substrate, the cutouts then being made by partial Removal of this metal layer can be generated by chemical etching processes or mechanical separation processes.
- the mask is also formed by structuring the metal layer by means of a laser, a different laser being used for this than the generation of the trench structure in the substrate.
- a laser is therefore preferably used here, the wavelength of which is well absorbed by the material of the mask;
- This can be a solid-state laser pumped with diodes or with a flash lamp and subsequent frequency multiplication, which is operated with a pulse frequency above 1 kHz up to 200 kHz and with a pulse duration between one ns and 200 ns, preferably between 10 and 60 ns.
- either a single pass with the laser via the mask cutout can be sufficient to produce the trench structure, or the laser beam is guided in several adjacent tracks through the cutouts of the mask.
- These laser processing traces can run in the longitudinal direction of the trenches or can be guided in a channel shape transversely to the longitudinal extension of the trenches.
- FIG. 1 shows schematically the energy distribution of a laser beam and its effect on a trench to be produced in a substrate
- FIG. 2 shows the energy distribution of a laser beam and whose IMPACT a grave structure in a substrate according to the inventive method
- Figure 3, 4 and 5 the generation of a mask according to the invention and a grave structure in successive phases of the process
- FIG. 6 shows the energy distribution of a laser beam guided next to one another in several passes in order to produce a trench which is wider in comparison to FIG. 2
- FIG. 7 shows the schematic representation of the guidance of a laser beam in several longitudinal tracks
- Figure 8 is a schematic representation of the guidance of a laser beam in a meandering track.
- Figure 1 generally shows the Gaussian distribution of the energy density F L of a laser beam. It can be seen that the energy density is only sufficient above a threshold F G to vaporize glass fibers, for example.
- a threshold F G to vaporize glass fibers
- complete evaporation of the glass fiber-reinforced substrate material to form a trench 3 therefore only takes place within a central region 4 with a width D, where the energy density lies above a threshold value F G.
- the energy density is not sufficient to completely vaporize the glass fiber material.
- FIGS. 3 to 5 show the process sequence for the creation of a mask and the subsequent creation of a trench structure with two different lasers.
- the glass fiber-reinforced substrate 1 is provided on its underside with the metal layer 2 and on its top with a metal layer 12, the mask 10 being to be formed from the latter.
- cutouts 14 corresponding to a desired trench structure in the substrate 1 are generated with a laser radiation 13, which is well absorbed by the metal layer 12 due to its wavelength.
- the laser radiation is preferably UV laser radiation with a wavelength of, for example, 355 nm.
- the desired trench structure is then generated with laser radiation 15, preferably a CO 2 laser radiation of 9250 nm, in that the laser beam 15 is directed through the cutouts 14 onto the substrate 1 until the trenches 16 are produced (see FIG. 5).
- laser radiation 15 preferably a CO 2 laser radiation of 9250 nm
- the laser beam must be moved through the recesses one or more times, as previously described. It is essential that the laser beam 15 is guided at least once so close to the edges of the recesses 14 that those edge regions of the laser beam whose effective energy density is not sufficient to completely remove the glass fiber-reinforced substrate material are reflected by the mask 10. Only then is ensures that the trenches 16 each receive clean walls free of glass beads with an acceptable inclination.
- FIG. 6 shows the superimposition of the energy distribution of, for example, three laser beam tracks lying next to one another over a substrate 1 with a mask 20 which has a relatively wide recess 21, so that a correspondingly wide trench 22 is produced.
- the adjacent laser beam tracks each with the same energy distribution F1 L , F2 L and F3 L, have the effect that an energy density acts on each point of the trench to be produced which lies above the threshold F G.
- the various laser beam traces for example 23, 24 and 25, can run in the longitudinal direction of the mask recess 21 according to FIG. However, it is also possible that a meandering track 26 according to FIG. 8 is guided back and forth between the edges of the recess 21.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03722247A EP1500316A1 (de) | 2002-04-30 | 2003-04-01 | Verfahren zur erzeugung einer grabenstruktur in einem polymer-substrat |
JP2004502686A JP2005532677A (ja) | 2002-04-30 | 2003-04-01 | ポリマー基板中にトレンチ構造を作成する方法 |
KR10-2004-7017426A KR20040104667A (ko) | 2002-04-30 | 2003-04-01 | 폴리머 기판에 트렌치 구조를 형성하는 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10219388A DE10219388A1 (de) | 2002-04-30 | 2002-04-30 | Verfahren zur Erzeugung einer Grabenstruktur in einem Polymer-Substrat |
DE10219388.6 | 2002-04-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003094584A1 true WO2003094584A1 (de) | 2003-11-13 |
Family
ID=29224939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2003/001065 WO2003094584A1 (de) | 2002-04-30 | 2003-04-01 | Verfahren zur erzeugung einer grabenstruktur in einem polymer-substrat |
Country Status (7)
Country | Link |
---|---|
US (1) | US6822191B2 (de) |
EP (1) | EP1500316A1 (de) |
JP (1) | JP2005532677A (de) |
KR (1) | KR20040104667A (de) |
CN (1) | CN1650678A (de) |
DE (1) | DE10219388A1 (de) |
WO (1) | WO2003094584A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005193278A (ja) * | 2004-01-08 | 2005-07-21 | Sumitomo Heavy Ind Ltd | レーザ加工方法 |
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JP2006101631A (ja) * | 2004-09-29 | 2006-04-13 | Fanuc Ltd | 静電モータ及びその製造方法 |
DE102004052142B4 (de) * | 2004-10-22 | 2009-05-28 | Rolls-Royce Deutschland Ltd & Co Kg | Laserschweißverfahren zur Herstellung von aus einem Blechmantel und einem Faserverbund bestehenden Verdichterschaufeln für ein Gasturbinentriebwerk |
JP2006278683A (ja) * | 2005-03-29 | 2006-10-12 | Japan Aviation Electronics Industry Ltd | 接続部材、及びその製造方法 |
CA2624200A1 (en) * | 2005-10-03 | 2007-04-12 | Aradigm Corporation | Method and system for laser machining |
US20080127484A1 (en) * | 2006-12-05 | 2008-06-05 | Viasystems Group, Inc. | Selective filling of through holes |
US8232502B2 (en) * | 2008-07-08 | 2012-07-31 | Acme Services Company, Llp | Laser engraving of ceramic articles |
EP2335862B1 (de) * | 2008-08-26 | 2016-10-19 | Hamamatsu Photonics K.K. | Laserbearbeitungsvorrichtung und laserbearbeitungsverfahren |
JP2012517620A (ja) * | 2009-09-02 | 2012-08-02 | ダブリュアイ−エー・コーポレーション | レーザ反射型マスク及びその製造方法 |
JP4941532B2 (ja) * | 2009-09-30 | 2012-05-30 | 富士通株式会社 | 電子部品のリードの製造方法及び電子部品のリードの製造装置 |
US9190390B2 (en) | 2012-08-22 | 2015-11-17 | Freescale Semiconductor Inc. | Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof |
US9064977B2 (en) | 2012-08-22 | 2015-06-23 | Freescale Semiconductor Inc. | Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof |
US9093457B2 (en) | 2012-08-22 | 2015-07-28 | Freescale Semiconductor Inc. | Stacked microelectronic packages having patterned sidewall conductors and methods for the fabrication thereof |
US9520323B2 (en) | 2012-09-11 | 2016-12-13 | Freescale Semiconductor, Inc. | Microelectronic packages having trench vias and methods for the manufacture thereof |
US9299670B2 (en) | 2013-03-14 | 2016-03-29 | Freescale Semiconductor, Inc. | Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof |
CN103253851A (zh) * | 2013-04-27 | 2013-08-21 | 北京工业大学 | 一种掩膜贴片选区co2激光辐照制作玻璃微透镜的方法 |
US9524950B2 (en) | 2013-05-31 | 2016-12-20 | Freescale Semiconductor, Inc. | Stacked microelectronic packages having sidewall conductors and methods for the fabrication thereof |
US9036363B2 (en) | 2013-09-30 | 2015-05-19 | Freescale Semiconductor, Inc. | Devices and stacked microelectronic packages with parallel conductors and intra-conductor isolator structures and methods of their fabrication |
US9025340B2 (en) | 2013-09-30 | 2015-05-05 | Freescale Semiconductor, Inc. | Devices and stacked microelectronic packages with in-trench package surface conductors and methods of their fabrication |
US9263420B2 (en) | 2013-12-05 | 2016-02-16 | Freescale Semiconductor, Inc. | Devices and stacked microelectronic packages with package surface conductors and methods of their fabrication |
US9305911B2 (en) | 2013-12-05 | 2016-04-05 | Freescale Semiconductor, Inc. | Devices and stacked microelectronic packages with package surface conductors and adjacent trenches and methods of their fabrication |
FR3019074B1 (fr) * | 2014-04-01 | 2016-04-15 | Snecma | Procede de marquage en surface d'une piece mecanique par une representation graphique predefinie avec effet de type holographique |
US10388607B2 (en) | 2014-12-17 | 2019-08-20 | Nxp Usa, Inc. | Microelectronic devices with multi-layer package surface conductors and methods of their fabrication |
DE102014119075B8 (de) * | 2014-12-18 | 2017-04-20 | Bayerische Motoren Werke Ag | Verfahren zum Laserstrahlschneiden eines textilen Halbzeugs |
CN104841751B (zh) * | 2015-01-30 | 2017-06-27 | 江苏大学 | 一种激光冲击微冲裁装置 |
KR101913563B1 (ko) * | 2016-07-07 | 2018-10-31 | 손금숙 | 레이져에칭법을 이용한 고휘도 발광직물의 제조방법 |
JP6821261B2 (ja) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | 被加工物の加工方法 |
CN108436308B (zh) * | 2018-03-16 | 2020-03-27 | 中国电子科技集团公司第三十八研究所 | 一种用于微波陶瓷基板上微孔的co2激光加工方法 |
EP3624571A1 (de) * | 2018-09-14 | 2020-03-18 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Verfahren zur herstellung gedruckter leiterbahnen auf einem objekt und 3d-gedruckte elektronik |
CN110052674B (zh) * | 2019-04-29 | 2020-03-27 | 青岛华超兴业交通设备有限公司 | 碳纤维增强复合材料微孔的加工系统及加工工艺 |
CN110539070A (zh) * | 2019-10-14 | 2019-12-06 | 颀中科技(苏州)有限公司 | 激光加工方法及激光加工装置 |
KR20210049250A (ko) * | 2019-10-24 | 2021-05-06 | 삼성디스플레이 주식회사 | 기판 가공 장치 및 기판 가공 방법 |
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DE19719700A1 (de) * | 1997-05-09 | 1998-11-12 | Siemens Ag | Verfahren zur Herstellung von Sacklöchern in einer Leiterplatte |
WO2000072645A1 (fr) * | 1999-05-24 | 2000-11-30 | Nippon Steel Chemical Co., Ltd. | Usinage au laser de films plastiques d'une carte a circuits, et procede de fabrication d'une telle carte a circuit |
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2002
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2003
- 2003-03-05 US US10/378,600 patent/US6822191B2/en not_active Expired - Fee Related
- 2003-04-01 CN CNA038098547A patent/CN1650678A/zh active Pending
- 2003-04-01 EP EP03722247A patent/EP1500316A1/de not_active Withdrawn
- 2003-04-01 JP JP2004502686A patent/JP2005532677A/ja active Pending
- 2003-04-01 WO PCT/DE2003/001065 patent/WO2003094584A1/de not_active Application Discontinuation
- 2003-04-01 KR KR10-2004-7017426A patent/KR20040104667A/ko not_active Application Discontinuation
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EP0164564A1 (de) * | 1984-05-18 | 1985-12-18 | Siemens Aktiengesellschaft | Anordnung zur Sacklocherzeugung in einem laminierten Aufbau |
JPH08241984A (ja) * | 1995-03-03 | 1996-09-17 | Hitachi Ltd | 半導体装置の製造方法 |
US20020033387A1 (en) * | 1995-08-07 | 2002-03-21 | Mitsubishi Denki Kabushiki Kaisha | Laser beam machining method for wiring board, laser beam machining apparatus for wiring board, and carbonic acid gas laser oscillator for machining wiring board |
WO1998006243A1 (de) * | 1996-07-31 | 1998-02-12 | Dyconex Patente | Verfahren zur herstellung von verbindungsleitern |
WO2000016443A1 (en) * | 1998-09-10 | 2000-03-23 | Viasystems Group, Inc. | Non-circular micro-via |
DE10149559A1 (de) * | 2000-10-06 | 2002-04-11 | Hitachi Via Mechanics Ltd | Verfahren und Vorrichtung zum Bohren gedruckter Verdrahtungsplatten |
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JP2005193278A (ja) * | 2004-01-08 | 2005-07-21 | Sumitomo Heavy Ind Ltd | レーザ加工方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20040104667A (ko) | 2004-12-10 |
US6822191B2 (en) | 2004-11-23 |
CN1650678A (zh) | 2005-08-03 |
US20030201258A1 (en) | 2003-10-30 |
JP2005532677A (ja) | 2005-10-27 |
EP1500316A1 (de) | 2005-01-26 |
DE10219388A1 (de) | 2003-11-20 |
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