CN1650678A - 用于在聚合物基底上产生沟状结构的方法 - Google Patents
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Abstract
为了在一个尤其由玻璃纤维强化的基底(1)中产生一个具有陡峭且无残渣的侧壁的沟状结构,使所述基底配有一个正形掩膜(10),该掩膜具有对应于要产生的沟状结构(3)的凹槽。在此激光辐射(15)如此穿过掩膜的凹槽进行导引,使得激光辐射(FL)的少能量的边缘区域(5)被屏蔽,并且使在聚合物表面上出现的激光辐射分量(4)在每个点上都具有一个在一个阈值(FG)以上的能量密度,其中将所述基底材料、包括必要时存在的玻璃纤维强化材料在内完全去除掉。
Description
本发明涉及一种用于在一个聚合物基底表面上利用一个给定波长的激光通过辐射来产生沟状结构的方法。
由WO 00/16443已知一种在印制电路板上产生孔结构和沟状结构的方法,其中这种沟状结构例如可以用于在印制电路板上形成屏蔽的线路结构。在那里提到,作为用于在一个印制电路板上产生这种沟的方法除了等离子腐蚀以外一般也使用激光。
但是在使用激光辐射去除聚合物材料时存在一个源自该实事的问题:在激光辐射内部的能量分布不是均匀的,而是产生一个高斯分布。这意味着,在激光辐射的边缘区域对基底发出的能量密度比在其中心区发出的能量密度低。其后果是,例如在加工一个沟状结构时不能以所期望的陡度产生沟的侧面。对于基底产生一个附加的问题,其中聚合物材料通过玻璃纤维或类似物质进行强化,其中去除这些强化材料比去除聚合物材料本身需要更高的能量密度。这导致在这样加工的沟边缘区域中玻璃纤维只部分地熔化,但是没有被去除并以滴状或球形粘附在侧壁上。因为这种玻璃球不能经济地机械地去除或通过化学腐蚀地去除,这产生一个严重的问题,因为它们干扰沟壁的表面并妨碍接着的涂敷。
因此本发明的目的是,提供一种方法,通过该方法能够在聚合物基底、尤其是在这种用玻璃纤维加强的聚合物基底中实现一个具有干净侧壁和一个可接受的陡度的沟状结构。
按照本发明这一点通过下面的工艺步骤实现:
-在基底表面上设置一种由反射激光辐射的材料制成的正形掩膜,该掩膜具有对应于要产生的沟状结构的凹槽,
-然后将激光辐射导引穿过掩膜的凹槽,其中激光辐射至少一次分别如此重叠地导引穿过每个凹槽的边界棱边,使得在聚合物表面上产生的激光辐射分量的激光密度在每个点上位于一个可以完全去除基底材料的阈值之上。
对于按照本发明的方法,借助于一个正形掩膜分别在要产生沟的边缘处切去通过掩膜反射的激光辐射的那个本来就不足以完全去除基底材料的分量。
本发明可以特别有利地用于在一个用玻璃纤维强化的基底上产生沟状结构,其中通过掩膜屏蔽激光辐射的那个边缘区域:该部位位于要蒸发玻璃纤维材料所需的能量阈值以下,该阈值例如根据材料对于峰值功率密度达到约1-10MW/cm2,最好是6-7MW/cm2。
为了产生沟状结构最好使用激光,其波长在最好由铜或铜合金制成的掩膜层上强烈反射。在这种情况下激光辐射可以直接聚焦在基底表面上。最好使用波长为9μm至11μm的激光,尤其是一个品质转换的CO2激光(guetegeschalter CO2 Laser),其脉冲频率为10至200kHz、最好是接近100kHz,而脉冲宽度为50至500ns、最好接近150ns。但是也可以使用高频激励的(RF excited)脉冲化的CO2激光,其脉冲频率在1至15kHz之间、最好是3至5kHz之间,而脉冲宽度在1至20μs之间、最好在3至5μs之间。
在另一优选的改进方案中也可以使用TEA-CO2激光(横向激励大气激光Transversly Excited Atmospheric Laser),其脉冲频率在1至15kHz之间,而脉冲宽度在50至100ns之间、最好约70ns。
代替CO2激光也可以使用其它激光。甚至也可以使用一个紫外辐射激光(UV-Laser),如果这样一种激光具有足够的功率和可接受的工作速度供使用的话。但是因为这种紫外辐射激光例如只能被铜制掩膜层较少地反射,因此它不能直接聚焦在掩膜或基底表面的平面上。
对于本发明所使用的掩膜是一个涂覆到基底表面上的金属层,它如所述那样最好由铜或铜合金制成。这个金属层可以通过化学或电镀沉积到基底表面上地构成,其中凹槽借助于化学腐蚀工艺或机械分离工艺局部去除这个金属层而产生。
在特别有利的改进方案中所述掩膜也通过金属层结构化借助于激光形成,其中为此使用另一种与在基底上产生沟状结构不同的激光。因此在此最好使用一种激光,其波长被掩膜材料良好地吸收;为此考虑一种激光,其波长在250至1100nm之间,例如一个波长为266或355nm的紫外辐射激光。在此可以是一个通过二极管或通过闪光灯泵浦的固体激光,它具有邻接的频率倍增器,该激光以高于1kHz直至200kHz的脉冲频率和1ns至200ns、最好在10至60ns之间的脉冲宽度工作。
根据基底中要产生的沟的宽度并取决于激光辐射的光斑宽度可以利用激光在掩膜凹槽上的一个唯一行程产生沟状结构,或者使激光以多个相邻的轨迹导引穿过掩膜凹槽。这些激光加工轨迹可以在沟的纵向方向上延伸,或者也可以横向于沟的线性膨胀部位蜿蜒地导引。
通过按照本发明使用掩膜此外还可以实现被去除沟的深度与宽度的不同比例。通常1∶1(深=宽)的比例(纵横比)是有意义的,但是也可以实现其它的比例,例如1∶3或更大,或者3∶1或更大,其中也可以实现一个较宽而较浅的或者一个较窄而较深的沟。
下面借助于附图的实施例详细描述本发明。附图示出:
图1一种激光辐射的能量分布和该激光辐射对在一个基底上所要产生的沟的作用的简图,
图2按照本发明方法的一个激光辐射的能量分布和该能量分布对在一个基底上的沟状结构的作用,
图3、4和5按照本发明产生一个掩膜和一个沟状结构的相互衔接的工艺状态,
图6以多次行程相邻导引的、用于产生一个比图2所示更宽的沟的激光辐射的能量分布,
图7一个激光辐射在多次纵向轨迹中导引的简图,
图8一个激光辐射在一个蜿蜒轨迹中导引的简图。
图1示出一种激光辐射的能量密度FL的一般高斯分布。在此可以看出,能量密度只在一个阈值FG以上才足以蒸发例如玻璃纤维。因此在一个配有一个位于底面上的金属层2的基底1中进行对于玻璃纤维强化的基底材料的完全蒸发,为的是只在一个宽度为D的中心区4内部形成一个沟3,在该中心区所述能量密度在一个阈值FG以上。在侧面区域5中能量密度不足以完全蒸发玻璃纤维材料。因此出现一个平缓的沟边缘7,在该边缘上形成且粘附玻璃球8(在附图中超大示出)。
图2示出按照本发明的用于解决上述问题的方案。在基底1上设置一个由铜或铜合金制成的掩膜层10,它具有一个在对应于所期望的沟3的尺寸上的凹槽11。在这种情况下所述沟宽、或者说凹槽11的宽度等于能量分布FL中心区4的宽度D。通过掩膜10保证只有位于阈值FG以上的激光能量分量才能到达基底,并在所期望的沟处也完全去除包括玻璃纤维强化物在内的基底。
在图3至5中示出通过两种不同的激光在产生一个掩膜并接着产生一个沟状结构时的工艺过程。玻璃纤维强化的基底1在其底面上具有所述金属层2,而在其顶面上具有一个金属层12,其中应该由金属层12构成掩膜10。为此利用一个由于其波长而被金属层良好地吸收的激光辐射13产生一个对应于在该基底中所期望的沟状结构的凹槽14。该激光辐射在这种情况下最好是一个波长例如为355nm的紫外辐射-激光辐射。这样产生的凹槽14在图4中示出。
然后利用一个激光辐射15、最好是9250nm的CO2激光辐射如此来产生所期望的沟状结构:该激光辐射15穿过凹槽14对准基底1,直到产生沟16(见图5)。如上所述,在此必需根据要产生的沟16的宽度和所使用的激光辐射的光斑宽度、使激光辐射一次或多次穿过凹槽14移动。在此重要的是,所述激光辐射15至少要一次如此靠近地沿着凹槽14的边缘导引,使激光辐射的那个有效能量密度不足以完全去除玻璃纤维强化的基底材料的边缘范围被掩膜10反射。只有这样才能保证沟16产生干净的、无玻璃球的、具有可接受斜度的侧壁。
如上所述,为了产生比激光辐射光斑宽度更宽的沟就要求在相邻的轨迹中多次地辐射基底。图6示出例如三个相邻的激光辐射轨迹在具有一个掩膜20的基底1上的能量分布的叠加,该掩膜具有一个相对较宽的凹槽21,因此产生一个相应宽度的沟22。分别具有相同能量分布F1L,F2L,F3L的相邻激光辐射轨迹起到使一个位于阈值FG以上的能量密度作用于要产生的沟的每个点上的作用。
按照图7,所述不同的激光辐射轨迹、例如23、24和25可以在掩膜-凹槽21的纵向上移动。但是也可以使一个蜿蜒移动的轨迹26按照图8在凹槽21的边缘之间往复导引。
Claims (14)
1.用于在一个聚合物—基底(1)的表面中通过以一个给定波长的激光的辐射来产生一个沟状结构的方法,该方法具有下列步骤:
—在基底(1)的表面上设置一个由一种对于激光辐射进行反射的材料所制成的正形掩膜(10;20),该掩膜具有对应于要产生的沟状结构(3;16;22)的凹槽(11;21),
—然后将激光辐射(15)导引穿过掩膜(10;20)的凹槽,其中激光辐射至少分别有一次重叠地这样导引穿过每个凹槽(11;14;21)的边界棱边,使得在聚合物表面上出现的激光辐射(15)分量的能量密度在每个点上位于一个可以完全去除基底材料的阈值(FG)之上。
2.如权利要求1所述的方法,其中,所述基底由一种通过玻璃纤维强化了的聚合物材料制成。
3.如权利要求1或2所述的方法,其中,为了产生沟状结构(3;16;22)使用一种波长在9至11μm之间的激光、尤其是一种CO2激光。
4.如权利要求3所述的方法,其中,使用一个品质转换的CO2激光,其波长在9μm至11μm之间,脉冲频率为10至200kHz、最好是接近100kHz,而脉冲宽度为50至5000ns、最好接近150ns。
5.如权利要求3所述的方法,其中,使用一个高频激励的(RF激励的)脉冲的CO2激光,其波长在9μm至11μm之间,脉冲频率在1至15kHz之间、最好是3至5kHz之间,而脉冲宽度在1至20μs之间、最好在3至5μs之间。
6.如权利要求3所述的方法,其中,使用一个TEA-CO2激光(横向激励大气激光),其波长在9μm至11μm之间,脉冲频率在1至15kHz之间,而脉冲宽度在50至100ns之间、最好约70ns。
7.如权利要求3至6中任一项所述的方法,其中,所述激光辐射在掩膜(10;20)的凹槽(11;14;21)中如此导引,使一个对应于脉冲峰值功率达到约1-10MW/cm2、最好是6-7MW/cm2的能量密度分别作用于凹槽内部中的每个点上。
8.如权利要求1至7中任一项所述的方法,其中,所述掩膜通过一个涂覆到基底(1)表面上的、最好是由铜或铜合金制成的金属层(12)构成。
9.如权利要求8所述的方法,其中,所述金属层(12)通过化学或电镀沉积到基底(1)的表面上,其中凹槽(11;14;21)分别通过借助于化学腐蚀工艺或机械分离工艺局部地去除所述金属层而产生。
10.如权利要求8所述的方法,其中,在金属层中的所述凹槽(11;14;21)通过使用另一激光(13)的辐射而产生,其波长被掩膜(10)的材料良好地吸收,其波长最好在250至1100nm之间。
11.如权利要求10所述的方法,其中,使用一个通过二极管或通过闪光灯泵浦的紫外辐射激光作为另一激光,其脉冲频率在1kHz以上,而脉冲宽度在1ns至200ns之间、最好在10ns至60ns之间。
12.如权利要求1至11中任一项所述的方法,其中,所述激光辐射(15)为了产生沟状结构在多个相邻的且相互间这样重叠的轨迹(23,24,25;26)中导引穿过凹槽,使有效的能量密度在凹槽处的每个点上位于阈值(FG)以上。
13.如权利要求12所述的方法,其中,所述激光辐射在多个相邻的轨迹(23,24,25)中在沟(3;16;22)的纵向上导引。
14.如权利要求12所述的方法,其中,所述激光辐射在凹槽(21)的部位处分别蜿蜒地横向于要产生的沟(22)的纵向进行导引。
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DE10219388A DE10219388A1 (de) | 2002-04-30 | 2002-04-30 | Verfahren zur Erzeugung einer Grabenstruktur in einem Polymer-Substrat |
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JP (1) | JP2005532677A (zh) |
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- 2003-04-01 EP EP03722247A patent/EP1500316A1/de not_active Withdrawn
- 2003-04-01 CN CNA038098547A patent/CN1650678A/zh active Pending
- 2003-04-01 WO PCT/DE2003/001065 patent/WO2003094584A1/de not_active Application Discontinuation
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US6822191B2 (en) | 2004-11-23 |
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