WO2003091776A1 - Guide d'ondes optique en resine et son procede de fabrication - Google Patents
Guide d'ondes optique en resine et son procede de fabrication Download PDFInfo
- Publication number
- WO2003091776A1 WO2003091776A1 PCT/JP2003/005274 JP0305274W WO03091776A1 WO 2003091776 A1 WO2003091776 A1 WO 2003091776A1 JP 0305274 W JP0305274 W JP 0305274W WO 03091776 A1 WO03091776 A1 WO 03091776A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- core
- resin
- optical waveguide
- layer
- waveguide
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/125—Bends, branchings or intersections
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1221—Basic optical elements, e.g. light-guiding paths made from organic materials
Definitions
- the present invention relates to a low-loss, high-quality resin optical waveguide.
- optical communication technology permeates as a basic technology of information communication systems
- optical waveguides are becoming increasingly important as key devices for optical networks, and at the same time, are being applied to fields such as electronic circuit wiring boards.
- Development is under way.
- resin optical waveguides are being developed as promising candidates.
- Acrylic resin, epoxy resin, silicon resin, polycarbonate resin, siloxane resin, polyimide resin, etc. are used as resin materials for waveguides, and they are in the near-infrared optical communication wavelength band1.
- fluorinated polyimide resin In order to ensure transparency in the 3 to 1.5 micron band, a resin material in which C—H bonds are replaced by C—D bonds or C—F bonds is used. Above all, fluorinated polyimide resin has excellent transmission characteristics in the near-infrared region, and also has the highest heat resistance and the required strength, so it is the most suitable material for waveguides.
- a method for fabricating a fluorinated polyimide resin waveguide is the same as that for an optical waveguide made of a silicon glass material, that is, a lower cladding layer and a core of a fluorinated polyimide are formed on a substrate such as silicon.
- a method of forming a layer, forming a ridge-type core pattern by photolithography and reactive ion etching (RIE), and then forming an upper cladding to embed the waveguide. Is generally known.
- a fluorinated polyamic acid varnish for a clad is formed on a substrate such as silicon by a spin coating method or the like, and after heating, a core film is formed thereon.
- a ridged core pattern is formed by photolithography and reactive ion etching (RIE, reactive ion etching) after heating, forming a film of a fluorinated polyamic acid varnish by spin coating, etc.
- RIE reactive ion etching
- a ridged waveguide forming method is also formed in which a fluorinated polyamic acid varnish for a clad is similarly formed by a spin-coat method or the like and then heated.
- the present invention provides a resin optical waveguide in which a peripheral type core layer along a waveguide core is removed and a region adjacent to the core layer is left in a bridge type resin waveguide. I do.
- FIGS. 1A to 1E are diagrams showing an optical waveguide manufacturing process by a ridge method.
- FIG. 2A is a plan view of a conventional resin Y-branch optical waveguide.
- FIG. 2B is a cross-sectional view taken along line a in FIG. 2A.
- FIG. 2C is a sectional view taken along line b in FIG. 2A.
- FIG. 3A is a plan view of a resin Y-branch optical waveguide of the present invention.
- FIG. 3B is a sectional view taken along line a in FIG. 3A.
- FIG. 3C is a cross-sectional view taken along line b in FIG. 3A.
- FIG. 4 shows a photomask pattern of the Y-branch waveguide of the present invention.
- FIG. 5 shows a 1 ⁇ 8 split photomask pattern of the present invention.
- a lower cladding layer is formed on a substrate, a core layer is formed thereon, a mask pattern is formed by photolithography, and etching is performed using this as a mask. After forming the waveguide core pattern, the upper cladding is formed.
- the core layer other than the conventional core pattern is entirely removed by etching except for the surrounding frame and the like, and the core layer is buried with a cladding resin to form an upper cladding.
- the straight waveguide undulates, or when the core width is wider than 10 microns, the core interval is designed to be divided into two at the branch part such as the Y branch part. A phenomenon of deviation from the value occurred, causing an increase in loss and polarization dependence.
- the width of the peripheral portion of the core pattern to be removed by etching should be at least six times the core width, preferably at least 50 microns, away from the core pattern.
- the volume change of the cladding layer becomes large and the core pattern is deformed, so that the thickness is set to 500 microns or less, preferably 200 microns or less.
- an oven / hot plate can be used for the heat treatment of the resist in the film forming process and the photolithography process for forming the core pattern. If used, the resin substrate will warp or bend, causing the hot plate surface and the resin substrate not to adhere completely, and As a result, poor temperature uniformity and reduced film thickness uniformity may occur, and these deformations may remain even when cooled.
- a suction-type hot plate which is a heating device provided with a suction hole for sucking the resin substrate on the surface of the hot plate.
- FIGS. 1A-1E are diagrams for explaining a manufacturing process of a resin optical waveguide by a normal ridge method.
- the resin optical waveguide is manufactured by the following steps.
- a lower cladding layer 3, a core layer 2 and a mask layer 1 are formed on a fluorinated polyimide substrate 4, and in FIG. 1B, photolithography and reactive ion etching (RIE: R
- RIE reactive ion etching
- FIG. 1C the RIE technique forms a patterned core shape similar to a mask layer.
- the mask layer is removed using RIE and a stripper to expose the formed core 2.
- the upper clad layer 5 is formed to form an optical waveguide.
- FIGS. 3A, 3B, and 3C show straight-line and -branch optical waveguides according to the present invention.
- what is indicated by numeral 6 is a non-etched portion of the core layer other than the core pattern.
- the present invention is not limited to linear waveguides and ⁇ -branches, but is also effective in planar optical waveguide circuits such as AWGs and directional couplers. Further, the present invention is effective not only for a single-mode optical waveguide but also for a multi-mode optical waveguide.
- the resin used for the substrate and the optical waveguide is fluorinated polyimide.
- the substrate has a thickness of 0.5 mm, a diameter of 100 mm, and a refractive index of (1.51) at a wavelength of 1.3 microns.
- a fluorinated polyamic acid varnish for a clad is applied to this substrate by a spin coating device, and then fired in an oven maintained in an inert atmosphere to form a lower clad layer of 18 ⁇ m.
- a fluorinated polyamic acid varnish for a core was applied by a spin coating apparatus, and then fired using an oven maintained in an inert atmosphere to form a core layer of 8 microns.
- the refractive index of the core layer used was (1.52), and the relative refractive index difference between the core and the clad was 0.3%.
- a mask layer On the core layer, 0.5 ⁇ m of silicon was formed as a mask layer by magnetron sputtering. A resist layer was further formed on this mask layer, and an optical waveguide pattern was exposed by an aligner using a Y-branch photomask shown in FIG. 4 to form a patterned resist layer. In FIG. 4, what is indicated by numeral 7 is a non-etched portion of the photomask other than the core pattern.
- the mask layer silicon, which was not protected by the resist layer was etched using an RIE apparatus while flowing CF 4 gas.
- a core layer portion which is not allowed to flow into the ⁇ 2 gas subsequently protecting the silicon mask layer is removed by etching, the total length 1 0 mm, the core width of 8 microns, the core pattern and the non-height 8 microns Y branch A removed core layer portion was formed.
- the substrate was immersed in a stripping solution containing hydrofluoric acid to remove the mask layer. Furthermore, the same fluorinated polyamide varnish as the lower clad is applied by a spin coating device, and then fired using an oven maintained in an inert atmosphere to form an 18-micron thick upper clad layer. did.
- the resin used for the substrate and the optical waveguide is fluorinated polyimide.
- the substrate has a thickness of 0.5 mm, a diameter of 100 mm, and a refractive index of 1.3 micron (1.51).
- a fluorinated polyamic acid varnish for a clad is applied to this substrate by a spin coating device, and then fired in an oven maintained in an inert atmosphere to form a lower clad layer of 18 ⁇ m.
- a fluorinated polyamic acid varnish for a core was applied by a spin coating device, and then baked using an oven maintained in an inert atmosphere to form an 8 ⁇ m core layer.
- the refractive index of the core layer used was (1.52), and the relative refractive index difference between the core and the clad was 0.3%.
- the core layer On the core layer, 0.5 ⁇ m of silicon was formed as a mask layer by magnetron sputtering. A resist layer is further formed on this mask layer, and the optical waveguide pattern is exposed by an aligner by a photolithography technique using a 1 ⁇ 8 split photo mask shown in FIG. In the evening, the resist layer was formed. Next, the mask layer silicon, which was not protected by the resist layer, was etched using an RIE apparatus while flowing CF 4 gas.
- a layer 2 of a Y-branch having a total length of 10 mm, a core width of 8 ⁇ m, and a height of 8 ⁇ m and a core pattern of 8 ⁇ m and a height of 8 ⁇ m were removed by etching the mask layer portion which was not protected by silicon in the mask layer by flowing a gas 2.
- An unremoved core layer was formed.
- the substrate was immersed in a stripping solution containing hydrofluoric acid to remove the mask layer.
- spin the same fluorinated polyamide varnish as the lower clad After being applied by a coating apparatus, it was baked using an oven maintained in an inert atmosphere to form an 18-micron thick upper cladding layer.
- the resin used for the substrate and the optical waveguide is fluorinated polyimide.
- the substrate has a thickness of 0.5 mm, a diameter of 100 mm, and a refractive index (1.31) at a wavelength of 1.3 microns.
- a fluorinated polyamic acid varnish for a clad is applied to this substrate by a spin coating device, and then fired in an oven maintained in an inert atmosphere to form a lower clad layer of 18 ⁇ m.
- a fluorinated polyamic acid varnish for a core was applied using a spin coating apparatus, and then fired using an oven maintained in an inert atmosphere to form a core layer of 8 microns.
- the core layer used had a refractive index of (1.52), and the relative refractive index difference of the core clad was 0.3%.
- the core layer On the core layer, 0.5 ⁇ m of silicon was formed as a mask layer by magnetron sputtering. A resist layer was further formed on this mask layer, and an optical waveguide pattern was exposed by an aligner using a photomask having a blank at 7 in FIG. 4 to form a patterned resist layer.
- the silicon of the mask layer which was not protected by the resist layer, was etched using a RIE apparatus while flowing CF 4 gas. Allowed to flow into subsequent 0 2 gas of the silicon core layer portions not protected in the mask layer is removed by etching, to form the full length 1 O mm, the core width of 8 microns, the Koapata down height 8 microns Y branch .
- a pattern with no core layer was obtained.
- the substrate was immersed in a stripping solution containing hydrofluoric acid to remove the mask layer.
- the same fluorinated polyamide varnish as that of the lower clad was applied by a spin coating device, and then baked using an oven maintained in an inert atmosphere to form an upper clad layer having a thickness of 18 ⁇ m.
- the deformation of the core butter was observed at the y-branch.
- the insertion loss at 1.3 ⁇ m was 7 dB, and the PDL (polarization dependence) was 2 dB, which was unsuitable as an optical waveguide.
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
L'invention concerne un guide d'ondes optique en résine de type à nervures. Ce guide d'ondes est fabriqué selon un procédé consistant à ne retirer qu'une couche de base périphérique le long d'un noyau du guide d'ondes, à enfouir une résine revêtue, et à laisser intactes les autres zones adjacentes à la couche de base.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-125790 | 2002-04-26 | ||
JP2002125790A JP2003315573A (ja) | 2002-04-26 | 2002-04-26 | 樹脂光導波路とその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003091776A1 true WO2003091776A1 (fr) | 2003-11-06 |
Family
ID=29267575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/005274 WO2003091776A1 (fr) | 2002-04-26 | 2003-04-24 | Guide d'ondes optique en resine et son procede de fabrication |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2003315573A (fr) |
WO (1) | WO2003091776A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005181959A (ja) * | 2003-12-22 | 2005-07-07 | Rohm & Haas Electronic Materials Llc | 光ファイバーをプリント配線板の埋め込み型導波路に連結する方法および構造体 |
JP2005338467A (ja) | 2004-05-27 | 2005-12-08 | Nhk Spring Co Ltd | 光分岐器及びその製造方法 |
JP2006133300A (ja) * | 2004-11-02 | 2006-05-25 | Mitsumi Electric Co Ltd | 光学装置及びその製造方法 |
JP2006184773A (ja) * | 2004-12-28 | 2006-07-13 | Mitsui Chemicals Inc | 光導波路およびこれを備えた光電気混載基板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03265802A (ja) * | 1990-03-16 | 1991-11-26 | Nippon Telegr & Teleph Corp <Ntt> | 埋め込み型石英系光導波路およびその製造方法 |
JPH08286064A (ja) * | 1995-04-19 | 1996-11-01 | Nippon Telegr & Teleph Corp <Ntt> | 高分子光導波路の作製方法 |
JPH09230155A (ja) * | 1996-02-27 | 1997-09-05 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路の製造方法 |
JP2001116940A (ja) * | 1999-10-21 | 2001-04-27 | Fujitsu Ltd | 光学装置 |
-
2002
- 2002-04-26 JP JP2002125790A patent/JP2003315573A/ja active Pending
-
2003
- 2003-04-24 WO PCT/JP2003/005274 patent/WO2003091776A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03265802A (ja) * | 1990-03-16 | 1991-11-26 | Nippon Telegr & Teleph Corp <Ntt> | 埋め込み型石英系光導波路およびその製造方法 |
JPH08286064A (ja) * | 1995-04-19 | 1996-11-01 | Nippon Telegr & Teleph Corp <Ntt> | 高分子光導波路の作製方法 |
JPH09230155A (ja) * | 1996-02-27 | 1997-09-05 | Nippon Telegr & Teleph Corp <Ntt> | 光導波路の製造方法 |
JP2001116940A (ja) * | 1999-10-21 | 2001-04-27 | Fujitsu Ltd | 光学装置 |
Non-Patent Citations (1)
Title |
---|
IMAMURA S. ET AL.: "Polymer channel waveguides with low loss at 1.3mum", ELECTRONICS LETTERS, vol. 27, no. 15, 1991, pages 1342 - 1343, XP000240780 * |
Also Published As
Publication number | Publication date |
---|---|
JP2003315573A (ja) | 2003-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003091776A1 (fr) | Guide d'ondes optique en resine et son procede de fabrication | |
US7444050B2 (en) | S-shaped curved optical waveguide and optical device | |
JP2001281479A (ja) | 高分子光導波路素子およびその製造方法 | |
JP4449075B2 (ja) | 光導波路及びその製造方法 | |
JP2001108854A (ja) | ポリマー光導波路 | |
JP2002311276A (ja) | 樹脂光導波路の作製方法 | |
US20220413220A1 (en) | Optical waveguides and methods for producing | |
US7450803B2 (en) | Optical waveguide | |
JP2006343516A (ja) | 光導波路およびその形成法 | |
WO2005038502A1 (fr) | Dispositif servant a modifier un trajet optique a voies multiples et son procede de fabrication | |
JP2007133026A (ja) | V溝付き光導波路の製造方法 | |
EP1536254B1 (fr) | Dispositif de guide d'ondes optiques | |
JP4253828B2 (ja) | コア位置を顕現化する被覆層を備えた光導波路、その製造方法および光部品 | |
JP2005208187A (ja) | 導波路構造を有する光学デバイスとその製造方法 | |
JP2001318257A (ja) | 高分子光導波路製造方法 | |
JP4759813B2 (ja) | 光配線層の製造方法、光配線層および光・電気配線基板 | |
JPH09101425A (ja) | 光導波路及びその製造方法 | |
JP2002311278A (ja) | 樹脂光導波路の作製方法 | |
JP2002236231A (ja) | 樹脂導波路の作成方法 | |
JPH06347658A (ja) | プラスチック光導波路 | |
KR100491053B1 (ko) | 폴리머 광소자 제조방법 | |
JP2002311274A (ja) | ポリイミド光導波路の作成方法 | |
JP2005114746A (ja) | 樹脂光導波路 | |
JP4218068B2 (ja) | 光導波路デバイス | |
US20030116530A1 (en) | Method for forming a groove and method for manufacturing an optical waveguide element |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
122 | Ep: pct application non-entry in european phase |