WO2003056637A3 - Verfahren zum herstellen von lichtleitenden led-körpern in zwei räumlich und zeitlich getrennten stufen - Google Patents

Verfahren zum herstellen von lichtleitenden led-körpern in zwei räumlich und zeitlich getrennten stufen Download PDF

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Publication number
WO2003056637A3
WO2003056637A3 PCT/DE2002/004738 DE0204738W WO03056637A3 WO 2003056637 A3 WO2003056637 A3 WO 2003056637A3 DE 0204738 W DE0204738 W DE 0204738W WO 03056637 A3 WO03056637 A3 WO 03056637A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
casting
injection moulding
spatially
producing light
Prior art date
Application number
PCT/DE2002/004738
Other languages
English (en)
French (fr)
Other versions
WO2003056637A8 (de
WO2003056637A2 (de
Inventor
Cem Olkay
Thorsten Ricking
Original Assignee
G L I Global Light Ind Gmbh
Cem Olkay
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by G L I Global Light Ind Gmbh, Cem Olkay filed Critical G L I Global Light Ind Gmbh
Priority to KR10-2004-7009951A priority Critical patent/KR20040093674A/ko
Priority to DE10296203T priority patent/DE10296203D2/de
Priority to US10/500,044 priority patent/US7232536B2/en
Priority to JP2003557051A priority patent/JP2005513816A/ja
Priority to AU2002360923A priority patent/AU2002360923A1/en
Priority to EP02795045A priority patent/EP1461835B1/de
Priority to DE50212034T priority patent/DE50212034D1/de
Publication of WO2003056637A2 publication Critical patent/WO2003056637A2/de
Publication of WO2003056637A3 publication Critical patent/WO2003056637A3/de
Publication of WO2003056637A8 publication Critical patent/WO2003056637A8/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
  • Led Device Packages (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

Verfahren zum Herstellen von lichtleitenden LED-Körpern aus vor dem endgültigen Erstarren fliessfähigen Werkstoff, in zwei giess- und/oder spritzgiesstechnischen Schritten, wobei zunächst die aus mindestens einem lichtemittierenden Chip und mindestens zwei elektrischen - mit dem Chip verbundenen - Anschlüssen bestehenden Elektronikteile umgossen oder umspritzt werden, um dann in einer grösseren LED-Endform wiederum zumindest bereichsweise umgossen oder umspritzt zu werden.
PCT/DE2002/004738 2001-12-24 2002-12-23 Verfahren zum herstellen von lichtleitenden led-körpern in zwei räumlich und zeitlich getrennten stufen WO2003056637A2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR10-2004-7009951A KR20040093674A (ko) 2001-12-24 2002-12-23 공간 및 시간적으로 분리된 2개의 단계로 광전도 발광다이오드 몸체를 제조하는 방법
DE10296203T DE10296203D2 (de) 2001-12-24 2002-12-23 Verfahren zum Herstellen von lichtleitenden LED-Körpern in zwei räumlich und zeitlich getrennten Stufen
US10/500,044 US7232536B2 (en) 2001-12-24 2002-12-23 Method for producing light-guiding LED bodies in two spatially and temporally separate steps
JP2003557051A JP2005513816A (ja) 2001-12-24 2002-12-23 導光式ｌｅｄモジュールの空間／時間的に分割した２工程による製造方法
AU2002360923A AU2002360923A1 (en) 2001-12-24 2002-12-23 Method for producing light-guiding led bodies in two spatially and temporally separate steps
EP02795045A EP1461835B1 (de) 2001-12-24 2002-12-23 Verfahren zum herstellen von leuchtdioden mit lichtleitenden körpern in zwei räumlich und zeitlich getrennten stufen
DE50212034T DE50212034D1 (de) 2001-12-24 2002-12-23 Verfahren zum herstellen von leuchtdioden mit lichtleitenden körpern in zwei räumlich und zeitlich getrennten stufen

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10163116.2 2001-12-24
DE10163116A DE10163116B4 (de) 2001-12-24 2001-12-24 Verfahren zum Herstellen von lichtleitenden LED-Körpern in zwei räumlich und zeitlich getrennten Stufen

Publications (3)

Publication Number Publication Date
WO2003056637A2 WO2003056637A2 (de) 2003-07-10
WO2003056637A3 true WO2003056637A3 (de) 2004-06-03
WO2003056637A8 WO2003056637A8 (de) 2004-08-05

Family

ID=7710270

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/004738 WO2003056637A2 (de) 2001-12-24 2002-12-23 Verfahren zum herstellen von lichtleitenden led-körpern in zwei räumlich und zeitlich getrennten stufen

Country Status (8)

Country Link
US (1) US7232536B2 (de)
EP (1) EP1461835B1 (de)
JP (1) JP2005513816A (de)
KR (1) KR20040093674A (de)
CN (1) CN1608325A (de)
AU (1) AU2002360923A1 (de)
DE (3) DE10163116B4 (de)
WO (1) WO2003056637A2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7695166B2 (en) * 2001-11-23 2010-04-13 Derose Anthony Shaped LED light bulb
US20050188569A1 (en) * 2001-11-23 2005-09-01 Derose Anthony Display signs and ornaments for holiday seasons
US20080084009A1 (en) * 2005-05-02 2008-04-10 Derose Anthony Method of Making Shaped LED Light Bulb
US10340424B2 (en) 2002-08-30 2019-07-02 GE Lighting Solutions, LLC Light emitting diode component
DE10242947B8 (de) * 2002-09-16 2009-06-18 Odelo Led Gmbh Verfahren zum Herstellen von LED-Körpern mit Hilfe einer Querschnittsverengung und Vorrichtung zur Durchführung des Herstellungsverfahrens
DE10345516B4 (de) * 2003-09-30 2012-03-01 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung aussendendes Halbleiterbauelement und Verfahren zu seiner Herstellung
DE10346452A1 (de) * 2003-10-03 2005-04-28 Schefenacker Vision Systems Leuchtelement mit Einlegelichtleitkörper
DE10347541B4 (de) * 2003-10-09 2012-02-16 Odelo Led Gmbh Verfahren zum Herstellen eines lichtleitenden LED-Körpers in mindestens zwei Fertigungsstufen
TWI230904B (en) * 2003-11-10 2005-04-11 Sunplus Technology Co Ltd Light guide module having an embedded LED
DE102005014584A1 (de) * 2004-04-16 2005-11-03 G.L.I. Global Light Industries Gmbh Verfahren zur Herstellung eines Lichtleitkörpers sowie Lichtleitkörper
DE102005041490A1 (de) * 2005-05-17 2006-11-23 Robert Bosch Gmbh Vorrichtung mit einem Kunststoffbauteil und mit einer Leuchtdiode
DE102007020418A1 (de) * 2007-04-27 2008-10-30 Hella Kgaa Hueck & Co. Verfahren und Vorrichtung zum Herstellen eines Lichtleitkörpers sowie ein Lichtleitkörper
CN102271887B (zh) * 2009-01-08 2014-03-05 旭硝子株式会社 脱模膜及发光二极管的制造方法
DE102009024614A1 (de) 2009-06-12 2010-12-16 Olsa S.P.A. Beleuchtungsvorrichtung für ein Fahrzeug
US8414151B2 (en) 2009-10-02 2013-04-09 GE Lighting Solutions, LLC Light emitting diode (LED) based lamp
US9103507B2 (en) 2009-10-02 2015-08-11 GE Lighting Solutions, LLC LED lamp with uniform omnidirectional light intensity output
CN107035977B (zh) * 2009-10-02 2021-01-22 Ge照明解决方案有限责任公司 发光设备
US8593040B2 (en) * 2009-10-02 2013-11-26 Ge Lighting Solutions Llc LED lamp with surface area enhancing fins
US9500355B2 (en) 2012-05-04 2016-11-22 GE Lighting Solutions, LLC Lamp with light emitting elements surrounding active cooling device
JP6091789B2 (ja) * 2012-05-28 2017-03-08 株式会社エンプラス 光束制御部材、発光装置および照明装置

Citations (12)

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Publication number Priority date Publication date Assignee Title
DE2722291A1 (de) * 1976-05-17 1977-11-24 Int Vibration Engineer Leuchtanzeigetafel
DE8707850U1 (de) * 1987-06-02 1987-08-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
JPS63129680A (ja) * 1986-11-20 1988-06-02 Nissei Plastics Ind Co 発光ダイオ−ドの樹脂封止方法
JPS63318173A (ja) * 1987-06-19 1988-12-27 New Japan Radio Co Ltd 光半導体装置の製造方法
JPS6469020A (en) * 1987-09-10 1989-03-15 Nissei Plastics Ind Co Method of sealing light-emitting diode with resin
JPH0590645A (ja) * 1991-09-30 1993-04-09 Victor Co Of Japan Ltd 発光装置及びその製造方法
DE4232644A1 (de) * 1992-09-29 1994-03-31 Siemens Ag Optoelektronisches Halbleiterbauelement
JPH06216412A (ja) * 1993-01-20 1994-08-05 Stanley Electric Co Ltd Ｌｅｄの製造方法
EP0635744A2 (de) * 1993-07-23 1995-01-25 Solari Udine S.P.A. Optisches System für LED
GB2282700A (en) * 1993-10-01 1995-04-12 John Herbert Brown Optical element for use with an LED
JPH1065220A (ja) * 1996-08-23 1998-03-06 Sharp Corp 半導体発光装置及びその製造方法
JP2000223748A (ja) * 1999-01-27 2000-08-11 Stanley Electric Co Ltd Ｌｅｄランプおよびその製造方法

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EP0290697A3 (de) * 1987-05-12 1989-03-15 Shen-Yuan Chen Lichtemittierende Diode, Lampe und schnelles Herstellungsverfahren
JPS6469019A (en) * 1987-09-10 1989-03-15 Nissei Plastics Ind Co Method of sealing light-emitting diode with resin

Patent Citations (12)

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DE2722291A1 (de) * 1976-05-17 1977-11-24 Int Vibration Engineer Leuchtanzeigetafel
JPS63129680A (ja) * 1986-11-20 1988-06-02 Nissei Plastics Ind Co 発光ダイオ−ドの樹脂封止方法
DE8707850U1 (de) * 1987-06-02 1987-08-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
JPS63318173A (ja) * 1987-06-19 1988-12-27 New Japan Radio Co Ltd 光半導体装置の製造方法
JPS6469020A (en) * 1987-09-10 1989-03-15 Nissei Plastics Ind Co Method of sealing light-emitting diode with resin
JPH0590645A (ja) * 1991-09-30 1993-04-09 Victor Co Of Japan Ltd 発光装置及びその製造方法
DE4232644A1 (de) * 1992-09-29 1994-03-31 Siemens Ag Optoelektronisches Halbleiterbauelement
JPH06216412A (ja) * 1993-01-20 1994-08-05 Stanley Electric Co Ltd Ｌｅｄの製造方法
EP0635744A2 (de) * 1993-07-23 1995-01-25 Solari Udine S.P.A. Optisches System für LED
GB2282700A (en) * 1993-10-01 1995-04-12 John Herbert Brown Optical element for use with an LED
JPH1065220A (ja) * 1996-08-23 1998-03-06 Sharp Corp 半導体発光装置及びその製造方法
JP2000223748A (ja) * 1999-01-27 2000-08-11 Stanley Electric Co Ltd Ｌｅｄランプおよびその製造方法

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PATENT ABSTRACTS OF JAPAN vol. 013, no. 166 (E - 746) 20 April 1989 (1989-04-20) *
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PATENT ABSTRACTS OF JAPAN vol. 2000, no. 11 3 January 2001 (2001-01-03) *

Also Published As

Publication number Publication date
EP1461835A2 (de) 2004-09-29
DE10163116A1 (de) 2003-07-17
US7232536B2 (en) 2007-06-19
KR20040093674A (ko) 2004-11-06
DE10296203D2 (de) 2004-07-01
CN1608325A (zh) 2005-04-20
JP2005513816A (ja) 2005-05-12
US20050127543A1 (en) 2005-06-16
DE10163116B4 (de) 2008-04-10
WO2003056637A8 (de) 2004-08-05
EP1461835B1 (de) 2008-04-02
DE50212034D1 (de) 2008-05-15
AU2002360923A1 (en) 2003-07-15
WO2003056637A2 (de) 2003-07-10

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