WO2002097880A3 - Leistungsalbleitermodul und verfahren zum herstellen eines leistungshalbleitermoduls - Google Patents
Leistungsalbleitermodul und verfahren zum herstellen eines leistungshalbleitermoduls Download PDFInfo
- Publication number
- WO2002097880A3 WO2002097880A3 PCT/EP2002/005520 EP0205520W WO02097880A3 WO 2002097880 A3 WO2002097880 A3 WO 2002097880A3 EP 0205520 W EP0205520 W EP 0205520W WO 02097880 A3 WO02097880 A3 WO 02097880A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- power semiconductor
- semiconductor module
- module
- carrier
- production
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Das Leistungshalbleitermodul umfasst aktive Halbleiterbauelemente (5 bis 10), die sich auf einer Trägeranordnung befinden, und ein Modulgehäuse (20), das durch Kunststoffumspritzen der aktiven Halbleiterbauelemente (5 bis 10) erzeugt ist. Um infolge der mechanischen Spannungen beim Umspritzvorgang und der Kunstsoffschrumpfung auftretenden Deformationen zu vermindern bzw. Zu kompensieren, bestecht die Trägeranordnung aus mehreren Trägerelementen (1, 2, 3), die unabhängig voneinander in verschiedenen Ebenen in der Gussform derart positioniert werden Können, dass ein Modulgehäuse (20) mit einer ebenen Modulunterseite (25) entsteht.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003500964A JP4780268B2 (ja) | 2001-05-25 | 2002-05-18 | 電力半導体モジュール、および電力半導体モジュールの製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10125697.3A DE10125697B4 (de) | 2001-05-25 | 2001-05-25 | Leistungshalbleitermodul und Verfahren zum Herstellen eines Leistungshalbleitermoduls |
DE10125697.3 | 2001-05-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002097880A2 WO2002097880A2 (de) | 2002-12-05 |
WO2002097880A3 true WO2002097880A3 (de) | 2003-09-25 |
Family
ID=7686238
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/005520 WO2002097880A2 (de) | 2001-05-25 | 2002-05-18 | Leistungsalbleitermodul und verfahren zum herstellen eines leistungshalbleitermoduls |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP4780268B2 (de) |
DE (1) | DE10125697B4 (de) |
WO (1) | WO2002097880A2 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003071601A2 (de) * | 2002-02-18 | 2003-08-28 | Infineon Technologies Ag | Schaltungsmodul und verfahren zu seiner herstellung |
DE102005061772B4 (de) * | 2005-12-23 | 2017-09-07 | Danfoss Silicon Power Gmbh | Leistungshalbleitermodul |
JP5565147B2 (ja) * | 2010-06-30 | 2014-08-06 | 株式会社デンソー | 半導体モジュールの製造方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710951A (en) * | 1980-06-25 | 1982-01-20 | Rohm Co Ltd | Semiconductor device |
DE3508456A1 (de) * | 1985-03-09 | 1986-09-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungshalbleitermodul |
EP0292059A2 (de) * | 1987-05-18 | 1988-11-23 | STMicroelectronics S.r.l. | Harzumhüllter Mehrchip-Modul und Verfahren zur Herstellung desselben |
EP0381054A2 (de) * | 1989-01-30 | 1990-08-08 | Kabushiki Kaisha Toshiba | Packung für eine Halbleiteranordnung |
US5083189A (en) * | 1987-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Resin-sealed type IC device |
US5194933A (en) * | 1990-10-05 | 1993-03-16 | Fuji Electric Co., Ltd. | Semiconductor device using insulation coated metal substrate |
US5245216A (en) * | 1990-09-11 | 1993-09-14 | Kabushiki Kaisha Toshiba | Plastic-molded type semiconductor device |
US5245215A (en) * | 1982-01-11 | 1993-09-14 | Kabushiki Kaisha Toshiba | Multichip packaged semiconductor device and method for manufacturing the same |
US5373188A (en) * | 1992-11-04 | 1994-12-13 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device including multiple semiconductor chips and cross-over lead |
EP1122778A2 (de) * | 2000-01-31 | 2001-08-08 | Sanyo Electric Co., Ltd. | Schaltungsanordnung und Verfahren zum Herstellen derselben |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5075759A (en) | 1989-07-21 | 1991-12-24 | Motorola, Inc. | Surface mounting semiconductor device and method |
DE3940933C2 (de) * | 1989-12-12 | 1996-08-01 | Eupec Gmbh & Co Kg | Verfahren zum Verformen einer Basisplatte für Halbleitermodule und Vorrichtung zum Durchführen des Verfahrens |
JP3206717B2 (ja) * | 1996-04-02 | 2001-09-10 | 富士電機株式会社 | 電力用半導体モジュール |
US6404065B1 (en) | 1998-07-31 | 2002-06-11 | I-Xys Corporation | Electrically isolated power semiconductor package |
-
2001
- 2001-05-25 DE DE10125697.3A patent/DE10125697B4/de not_active Expired - Fee Related
-
2002
- 2002-05-18 WO PCT/EP2002/005520 patent/WO2002097880A2/de active Application Filing
- 2002-05-18 JP JP2003500964A patent/JP4780268B2/ja not_active Expired - Fee Related
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710951A (en) * | 1980-06-25 | 1982-01-20 | Rohm Co Ltd | Semiconductor device |
US5245215A (en) * | 1982-01-11 | 1993-09-14 | Kabushiki Kaisha Toshiba | Multichip packaged semiconductor device and method for manufacturing the same |
DE3508456A1 (de) * | 1985-03-09 | 1986-09-11 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungshalbleitermodul |
US5083189A (en) * | 1987-03-31 | 1992-01-21 | Kabushiki Kaisha Toshiba | Resin-sealed type IC device |
EP0292059A2 (de) * | 1987-05-18 | 1988-11-23 | STMicroelectronics S.r.l. | Harzumhüllter Mehrchip-Modul und Verfahren zur Herstellung desselben |
EP0381054A2 (de) * | 1989-01-30 | 1990-08-08 | Kabushiki Kaisha Toshiba | Packung für eine Halbleiteranordnung |
US5245216A (en) * | 1990-09-11 | 1993-09-14 | Kabushiki Kaisha Toshiba | Plastic-molded type semiconductor device |
US5194933A (en) * | 1990-10-05 | 1993-03-16 | Fuji Electric Co., Ltd. | Semiconductor device using insulation coated metal substrate |
US5373188A (en) * | 1992-11-04 | 1994-12-13 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor device including multiple semiconductor chips and cross-over lead |
EP1122778A2 (de) * | 2000-01-31 | 2001-08-08 | Sanyo Electric Co., Ltd. | Schaltungsanordnung und Verfahren zum Herstellen derselben |
Non-Patent Citations (2)
Title |
---|
HINCHLEY D A ET AL: "Innovative low-cost power module", IEE PROCEEDINGS: CIRCUITS DEVICES AND SYSTEMS, INSTITUTION OF ELECTRICAL ENGINEERS, STENVENAGE, GB, vol. 148, no. 2, 6 April 2001 (2001-04-06), pages 85 - 88, XP006016213, ISSN: 1350-2409 * |
PATENT ABSTRACTS OF JAPAN vol. 006, no. 072 (E - 105) 7 May 1982 (1982-05-07) * |
Also Published As
Publication number | Publication date |
---|---|
DE10125697B4 (de) | 2019-01-03 |
WO2002097880A2 (de) | 2002-12-05 |
JP4780268B2 (ja) | 2011-09-28 |
JP2004532529A (ja) | 2004-10-21 |
DE10125697A1 (de) | 2002-12-05 |
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