WO2003054939A1 - Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat - Google Patents
Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat Download PDFInfo
- Publication number
- WO2003054939A1 WO2003054939A1 PCT/EP2002/014096 EP0214096W WO03054939A1 WO 2003054939 A1 WO2003054939 A1 WO 2003054939A1 EP 0214096 W EP0214096 W EP 0214096W WO 03054939 A1 WO03054939 A1 WO 03054939A1
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- WO
- WIPO (PCT)
- Prior art keywords
- layer
- iii
- substrate
- masking
- particular according
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02792976A EP1456872A1 (de) | 2001-12-21 | 2002-12-11 | Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat |
KR10-2004-7009668A KR20040070255A (ko) | 2001-12-21 | 2002-12-11 | 비 ⅲ-ⅴ 기판상의 ⅲ-ⅴ 반도체층 증착방법 |
AU2002358678A AU2002358678A1 (en) | 2001-12-21 | 2002-12-11 | Method for depositing iii-v semiconductor layers on a non iii-v substrate |
JP2003555567A JP2005513799A (ja) | 2001-12-21 | 2002-12-11 | Iii−v半導体皮膜を非iii−v基板に沈積する方法 |
US10/872,914 US7128786B2 (en) | 2001-12-21 | 2004-06-21 | Process for depositing III-V semiconductor layers on a non-III-V substrate |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10163715.2 | 2001-12-21 | ||
DE10163715 | 2001-12-21 | ||
DE10206751A DE10206751A1 (de) | 2001-12-21 | 2002-02-19 | Verfahren zum Abscheiden von III-V-Halbleiterschichten auf einem Nicht -III-V-Substrat |
DE10206751.1 | 2002-02-19 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/872,914 Continuation US7128786B2 (en) | 2001-12-21 | 2004-06-21 | Process for depositing III-V semiconductor layers on a non-III-V substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003054939A1 true WO2003054939A1 (de) | 2003-07-03 |
Family
ID=26010858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2002/014096 WO2003054939A1 (de) | 2001-12-21 | 2002-12-11 | Verfahren zum abscheiden von iii-v-halbleiterschichten auf einem nicht-iii-v-substrat |
Country Status (6)
Country | Link |
---|---|
US (1) | US7128786B2 (de) |
EP (1) | EP1456872A1 (de) |
JP (1) | JP2005513799A (de) |
AU (1) | AU2002358678A1 (de) |
TW (1) | TW561526B (de) |
WO (1) | WO2003054939A1 (de) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7327036B2 (en) | 2003-12-22 | 2008-02-05 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing a group III-nitride material on a silicon substrate and device therefor |
WO2010089623A1 (en) * | 2009-02-05 | 2010-08-12 | S.O.I.Tec Silicon On Insulator Technologies | Epitaxial methods and structures for forming semiconductor materials |
US7896965B2 (en) * | 2003-07-31 | 2011-03-01 | Osram Opto Semiconductors Gmbh | Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip |
US8017416B2 (en) | 2003-07-31 | 2011-09-13 | Osram Opto Semiconductors Gmbh | Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip |
WO2014019752A1 (de) * | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip |
EP2171747B1 (de) * | 2007-07-26 | 2016-07-13 | Soitec | Verfahren zur herstellung verbesserter epitaktischer materialien |
EP2314732B2 (de) † | 2009-10-21 | 2016-08-03 | VON ARDENNE GmbH | Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle |
EP3696300A1 (de) * | 2019-02-18 | 2020-08-19 | Aixatech GmbH | Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen |
Families Citing this family (19)
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US7172745B1 (en) * | 2003-07-25 | 2007-02-06 | Chien-Min Sung | Synthesis of diamond particles in a metal matrix |
US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
JP5287240B2 (ja) | 2006-03-29 | 2013-09-11 | 富士通株式会社 | 多結晶SiC基板を有する化合物半導体ウエハの製造方法 |
TWI334164B (en) * | 2006-06-07 | 2010-12-01 | Ind Tech Res Inst | Method of manufacturing nitride semiconductor substrate and composite material substrate |
TWI325641B (en) | 2006-09-04 | 2010-06-01 | Huga Optotech Inc | Light emitting device and methods for forming the same |
US20080083431A1 (en) * | 2006-10-06 | 2008-04-10 | Mark Schwarze | Device and method for clearing debris from the front of a hood in a mechanized sweepers |
US7825432B2 (en) * | 2007-03-09 | 2010-11-02 | Cree, Inc. | Nitride semiconductor structures with interlayer structures |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
EP2126141A4 (de) * | 2007-03-15 | 2010-08-11 | Univ Cleveland Hospitals | Screening, diagnose, behandlung und prognose pathophysiologischer zustände durch rna-regulation |
EP2168146A2 (de) * | 2007-07-10 | 2010-03-31 | Nxp B.V. | Einzelkristallwachstum auf einem nicht zusammenpassenden substrat |
CN101802254B (zh) | 2007-10-11 | 2013-11-27 | 瓦伦斯处理设备公司 | 化学气相沉积反应器 |
US8803189B2 (en) * | 2008-08-11 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-V compound semiconductor epitaxy using lateral overgrowth |
CN101853808B (zh) | 2008-08-11 | 2014-01-29 | 台湾积体电路制造股份有限公司 | 形成电路结构的方法 |
US8178427B2 (en) * | 2009-03-31 | 2012-05-15 | Commissariat A. L'energie Atomique | Epitaxial methods for reducing surface dislocation density in semiconductor materials |
JP6655389B2 (ja) * | 2012-03-21 | 2020-02-26 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングFreiberger Compound Materials Gmbh | Iii−nテンプレートの製造方法およびiii−nテンプレート |
KR101464854B1 (ko) * | 2013-01-14 | 2014-11-25 | 주식회사 엘지실트론 | 반도체 기판 |
DK3274692T3 (da) | 2015-03-24 | 2022-08-29 | Illumina Inc | Fremgangsmåder til billeddannelse af prøver til biologisk eller kemisk analyse |
US9520394B1 (en) | 2015-05-21 | 2016-12-13 | International Business Machines Corporation | Contact structure and extension formation for III-V nFET |
KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6325850B1 (en) * | 1997-10-20 | 2001-12-04 | CENTRE NATIONAL DE LA RECHERCHé SCIENTIFIQUE (CNRS) | Method for producing a gallium nitride epitaxial layer |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3321369B2 (ja) * | 1996-09-27 | 2002-09-03 | 日本碍子株式会社 | 表面弾性波装置およびその基板およびその製造方法 |
EP0942459B1 (de) * | 1997-04-11 | 2012-03-21 | Nichia Corporation | Wachstumsmethode für einen nitrid-halbleiter |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
US6160833A (en) * | 1998-05-06 | 2000-12-12 | Xerox Corporation | Blue vertical cavity surface emitting laser |
JP3550070B2 (ja) * | 1999-03-23 | 2004-08-04 | 三菱電線工業株式会社 | GaN系化合物半導体結晶、その成長方法及び半導体基材 |
JP4145437B2 (ja) * | 1999-09-28 | 2008-09-03 | 住友電気工業株式会社 | 単結晶GaNの結晶成長方法及び単結晶GaN基板の製造方法と単結晶GaN基板 |
US6475882B1 (en) * | 1999-12-20 | 2002-11-05 | Nitride Semiconductors Co., Ltd. | Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device |
US6841808B2 (en) * | 2000-06-23 | 2005-01-11 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for producing the same |
-
2002
- 2002-10-24 TW TW091124715A patent/TW561526B/zh not_active IP Right Cessation
- 2002-12-11 AU AU2002358678A patent/AU2002358678A1/en not_active Abandoned
- 2002-12-11 EP EP02792976A patent/EP1456872A1/de not_active Withdrawn
- 2002-12-11 WO PCT/EP2002/014096 patent/WO2003054939A1/de active Application Filing
- 2002-12-11 JP JP2003555567A patent/JP2005513799A/ja active Pending
-
2004
- 2004-06-21 US US10/872,914 patent/US7128786B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6325850B1 (en) * | 1997-10-20 | 2001-12-04 | CENTRE NATIONAL DE LA RECHERCHé SCIENTIFIQUE (CNRS) | Method for producing a gallium nitride epitaxial layer |
Non-Patent Citations (4)
Title |
---|
CHEN Y ET AL: "DISLOCATION REDUCTION IN GAN FILMS VIA LATERAL OVERGROWTH FROM TRENCHES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 75, no. 14, 4 October 1999 (1999-10-04), pages 2062 - 2064, XP000875610, ISSN: 0003-6951 * |
See also references of EP1456872A1 * |
STRITTMATTER A ET AL: "MASKLESS EPITAXIAL LATERAL OVERGROWTH OF GAN LAYERS ON STRUCTURED SI(111) SUBSTRATES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 78, no. 6, 5 February 2001 (2001-02-05), pages 727 - 729, XP001001018, ISSN: 0003-6951 * |
ZHELEVA T S ET AL: "DISLOCATION DENSITY REDUCTION VIA LATERAL EPITAXY IN SELECTIVELY GROWN GAN STRUCTURES", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 71, no. 17, 27 October 1997 (1997-10-27), pages 2472 - 2474, XP000726159, ISSN: 0003-6951 * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7896965B2 (en) * | 2003-07-31 | 2011-03-01 | Osram Opto Semiconductors Gmbh | Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip |
US8017416B2 (en) | 2003-07-31 | 2011-09-13 | Osram Opto Semiconductors Gmbh | Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip |
US7327036B2 (en) | 2003-12-22 | 2008-02-05 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing a group III-nitride material on a silicon substrate and device therefor |
EP2171747B1 (de) * | 2007-07-26 | 2016-07-13 | Soitec | Verfahren zur herstellung verbesserter epitaktischer materialien |
WO2010089623A1 (en) * | 2009-02-05 | 2010-08-12 | S.O.I.Tec Silicon On Insulator Technologies | Epitaxial methods and structures for forming semiconductor materials |
EP2314732B2 (de) † | 2009-10-21 | 2016-08-03 | VON ARDENNE GmbH | Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle |
WO2014019752A1 (de) * | 2012-07-31 | 2014-02-06 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip |
US9293640B2 (en) | 2012-07-31 | 2016-03-22 | Osram Opto Semiconductors Gmbh | Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
EP3696300A1 (de) * | 2019-02-18 | 2020-08-19 | Aixatech GmbH | Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen |
Also Published As
Publication number | Publication date |
---|---|
US20050022725A1 (en) | 2005-02-03 |
US7128786B2 (en) | 2006-10-31 |
TW561526B (en) | 2003-11-11 |
AU2002358678A1 (en) | 2003-07-09 |
JP2005513799A (ja) | 2005-05-12 |
EP1456872A1 (de) | 2004-09-15 |
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