TW561526B - Method for depositing III-V semiconductor layers on a non-III-V substrate - Google Patents

Method for depositing III-V semiconductor layers on a non-III-V substrate Download PDF

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Publication number
TW561526B
TW561526B TW091124715A TW91124715A TW561526B TW 561526 B TW561526 B TW 561526B TW 091124715 A TW091124715 A TW 091124715A TW 91124715 A TW91124715 A TW 91124715A TW 561526 B TW561526 B TW 561526B
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Taiwan
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layer
scope
patent application
item
substrate
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TW091124715A
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English (en)
Chinese (zh)
Inventor
Holger Jurgensen
Alois Krost
Armin Dadgar
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Aixtron Ag
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Priority claimed from DE10206751A external-priority patent/DE10206751A1/de
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Publication of TW561526B publication Critical patent/TW561526B/zh

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
TW091124715A 2001-12-21 2002-10-24 Method for depositing III-V semiconductor layers on a non-III-V substrate TW561526B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10163715 2001-12-21
DE10206751A DE10206751A1 (de) 2001-12-21 2002-02-19 Verfahren zum Abscheiden von III-V-Halbleiterschichten auf einem Nicht -III-V-Substrat

Publications (1)

Publication Number Publication Date
TW561526B true TW561526B (en) 2003-11-11

Family

ID=26010858

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091124715A TW561526B (en) 2001-12-21 2002-10-24 Method for depositing III-V semiconductor layers on a non-III-V substrate

Country Status (6)

Country Link
US (1) US7128786B2 (de)
EP (1) EP1456872A1 (de)
JP (1) JP2005513799A (de)
AU (1) AU2002358678A1 (de)
TW (1) TW561526B (de)
WO (1) WO2003054939A1 (de)

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US7172745B1 (en) * 2003-07-25 2007-02-06 Chien-Min Sung Synthesis of diamond particles in a metal matrix
DE10335081A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip
DE10335080A1 (de) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
EP1583139A1 (de) 2004-04-02 2005-10-05 Interuniversitaire Microelectronica Centrum vzw ( IMEC) Verfahren zur Abscheidung von einem Gruppe III-Nitrid-Material auf ein Siliziumsubstrat und entsprechende Vorrichtung
US9406505B2 (en) * 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
WO2007122669A1 (ja) 2006-03-29 2007-11-01 Fujitsu Limited 多結晶ＳｉＣ基板を有する化合物半導体ウエハ、化合物半導体装置とそれらの製造方法
TWI334164B (en) * 2006-06-07 2010-12-01 Ind Tech Res Inst Method of manufacturing nitride semiconductor substrate and composite material substrate
TWI325641B (en) 2006-09-04 2010-06-01 Huga Optotech Inc Light emitting device and methods for forming the same
US20080083431A1 (en) * 2006-10-06 2008-04-10 Mark Schwarze Device and method for clearing debris from the front of a hood in a mechanized sweepers
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
EP2126141A4 (de) * 2007-03-15 2010-08-11 Univ Cleveland Hospitals Screening, diagnose, behandlung und prognose pathophysiologischer zustände durch rna-regulation
US8962453B2 (en) * 2007-07-10 2015-02-24 Nxp B.V. Single crystal growth on a mis-matched substrate
US7732306B2 (en) * 2007-07-26 2010-06-08 S.O.I.Tec Silicon On Insulator Technologies Methods for producing improved epitaxial materials
CN101802254B (zh) 2007-10-11 2013-11-27 瓦伦斯处理设备公司 化学气相沉积反应器
US8803189B2 (en) * 2008-08-11 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. III-V compound semiconductor epitaxy using lateral overgrowth
US8377796B2 (en) 2008-08-11 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. III-V compound semiconductor epitaxy from a non-III-V substrate
EP2412006A1 (de) * 2009-02-05 2012-02-01 S.O.I.Tec Silicon on Insulator Technologies Epitaxialverfahren und strukturen zur bildung von halbleitermaterialien
US8178427B2 (en) * 2009-03-31 2012-05-15 Commissariat A. L'energie Atomique Epitaxial methods for reducing surface dislocation density in semiconductor materials
DE102009050234A1 (de) † 2009-10-21 2011-05-05 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer TCO-Schicht und Dünnschichtsolarzelle
PL2815421T3 (pl) * 2012-03-21 2018-06-29 Freiberger Compound Materials Gmbh SPOSÓB WYTWARZANIA MATRYC lll-N I ICH DALSZEJ OBÓRKI I MATRYCA lll-N
DE102012107001A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
KR101464854B1 (ko) * 2013-01-14 2014-11-25 주식회사 엘지실트론 반도체 기판
EP3274692B1 (de) 2015-03-24 2022-08-10 Illumina, Inc. Verfahren zur bildgebung von proben zur biologischen oder chemischen analyse
US9520394B1 (en) 2015-05-21 2016-12-13 International Business Machines Corporation Contact structure and extension formation for III-V nFET
KR102369676B1 (ko) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 표시 장치의 제조장치 및 표시 장치의 제조방법
EP3696300A1 (de) * 2019-02-18 2020-08-19 Aixatech GmbH Verfahren zur herstellung eines verbundmaterialkörpers insbesondere für die verwendung bei der herstellung von elektronischen oder optoelektronischen bauelementen

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Also Published As

Publication number Publication date
AU2002358678A1 (en) 2003-07-09
WO2003054939A1 (de) 2003-07-03
JP2005513799A (ja) 2005-05-12
US20050022725A1 (en) 2005-02-03
US7128786B2 (en) 2006-10-31
EP1456872A1 (de) 2004-09-15

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