WO2003035925A1 - Dispositif et procede de metallisation sous vide, element electroluminescent organique produit par ledit dispositif et procede associe - Google Patents

Dispositif et procede de metallisation sous vide, element electroluminescent organique produit par ledit dispositif et procede associe Download PDF

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Publication number
WO2003035925A1
WO2003035925A1 PCT/JP2002/011193 JP0211193W WO03035925A1 WO 2003035925 A1 WO2003035925 A1 WO 2003035925A1 JP 0211193 W JP0211193 W JP 0211193W WO 03035925 A1 WO03035925 A1 WO 03035925A1
Authority
WO
WIPO (PCT)
Prior art keywords
deposited
evaporation source
substances
tubular body
vacuum deposition
Prior art date
Application number
PCT/JP2002/011193
Other languages
English (en)
French (fr)
Inventor
Junji Kido
Taisuke Nishimori
Yasuo Kishi
Yukihiro Kondo
Teruo Nakagawa
Yuuji Yanagi
Eiichi Matsumoto
Syuuji Maki
Original Assignee
Matsushita Electric Works, Ltd.
Tokki Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001329674A external-priority patent/JP3735287B2/ja
Priority claimed from JP2002218624A external-priority patent/JP4174257B2/ja
Application filed by Matsushita Electric Works, Ltd., Tokki Corporation filed Critical Matsushita Electric Works, Ltd.
Priority to US10/493,587 priority Critical patent/US20050005857A1/en
Priority to EP02777982A priority patent/EP1457582B1/en
Priority to KR1020047005798A priority patent/KR100958682B1/ko
Priority to ES02777982T priority patent/ES2391051T3/es
Priority to AT02777982T priority patent/ATE555228T1/de
Publication of WO2003035925A1 publication Critical patent/WO2003035925A1/ja
Priority to US12/032,832 priority patent/US20080156267A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
PCT/JP2002/011193 2001-10-26 2002-10-28 Dispositif et procede de metallisation sous vide, element electroluminescent organique produit par ledit dispositif et procede associe WO2003035925A1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US10/493,587 US20050005857A1 (en) 2001-10-26 2002-10-28 Device and method for vacuum deposition, and organic electroluminescent element provided by the device and the method
EP02777982A EP1457582B1 (en) 2001-10-26 2002-10-28 Device for vacuum deposition
KR1020047005798A KR100958682B1 (ko) 2001-10-26 2002-10-28 진공증착장치, 진공증착방법 및 이들로부터 얻어지는 유기el 소자
ES02777982T ES2391051T3 (es) 2001-10-26 2002-10-28 Dispositivo de deposición al vacio
AT02777982T ATE555228T1 (de) 2001-10-26 2002-10-28 Vorrichtung zur vakuumabscheidung
US12/032,832 US20080156267A1 (en) 2001-10-26 2008-02-18 Device and method for vacuum deposition, and organic electroluminescent element provided by the device and the method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001329674A JP3735287B2 (ja) 2001-10-26 2001-10-26 真空蒸着装置及び真空蒸着方法
JP2001-329674 2001-10-26
JP2002-218624 2002-07-26
JP2002218624A JP4174257B2 (ja) 2002-07-26 2002-07-26 真空蒸着方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/032,832 Continuation US20080156267A1 (en) 2001-10-26 2008-02-18 Device and method for vacuum deposition, and organic electroluminescent element provided by the device and the method

Publications (1)

Publication Number Publication Date
WO2003035925A1 true WO2003035925A1 (fr) 2003-05-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011193 WO2003035925A1 (fr) 2001-10-26 2002-10-28 Dispositif et procede de metallisation sous vide, element electroluminescent organique produit par ledit dispositif et procede associe

Country Status (8)

Country Link
US (2) US20050005857A1 (ja)
EP (1) EP1457582B1 (ja)
KR (1) KR100958682B1 (ja)
CN (1) CN1302149C (ja)
AT (1) ATE555228T1 (ja)
ES (1) ES2391051T3 (ja)
TW (1) TWI264473B (ja)
WO (1) WO2003035925A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100363532C (zh) * 2004-01-29 2008-01-23 三菱日立制铁机械株式会社 真空蒸镀机
TWI607103B (zh) * 2016-11-08 2017-12-01 財團法人工業技術研究院 蒸鍍源及應用所述蒸鍍源的蒸鍍裝置

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JP2005029895A (ja) * 2003-07-04 2005-02-03 Agfa Gevaert Nv 蒸着装置
US20050241585A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company System for vaporizing materials onto a substrate surface
JP5268249B2 (ja) * 2005-12-14 2013-08-21 キヤノン株式会社 有機発光素子の製造方法
US7645483B2 (en) 2006-01-17 2010-01-12 Eastman Kodak Company Two-dimensional aperture array for vapor deposition
JP4815447B2 (ja) * 2006-05-19 2011-11-16 株式会社アルバック 有機蒸着材料用蒸着装置、有機薄膜の製造方法
JP2008019477A (ja) * 2006-07-13 2008-01-31 Canon Inc 真空蒸着装置
JP2009149916A (ja) * 2006-09-14 2009-07-09 Ulvac Japan Ltd 真空蒸気処理装置
JP2008196032A (ja) * 2007-02-15 2008-08-28 Fujifilm Corp 蒸着材料蒸発装置
FI20085547A0 (fi) * 2008-06-04 2008-06-04 Dca Instr Oy Höyrystyslaite, höyrystysupokas sekä menetelmä kalvon kasvattamiseksi substraatin pinnalle
CN101619446A (zh) * 2008-06-30 2010-01-06 鸿富锦精密工业(深圳)有限公司 镀膜蒸发载具及使用该镀膜蒸发载具的真空镀膜装置
EP2230703A3 (en) * 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
JP5567905B2 (ja) * 2009-07-24 2014-08-06 株式会社日立ハイテクノロジーズ 真空蒸着方法及びその装置
JP4924707B2 (ja) * 2009-12-25 2012-04-25 株式会社日立プラントテクノロジー 被検出物捕集具及びその使用方法
TWI452157B (zh) * 2010-02-09 2014-09-11 Ind Tech Res Inst 一種面型蒸鍍源及其蒸鍍方法與系統
CN101880856B (zh) * 2010-07-30 2012-03-21 汕头万顺包装材料股份有限公司 一种在印材上进行局部真空蒸镀的设备
TWI447246B (zh) * 2011-07-07 2014-08-01 Panasonic Corp 真空蒸鍍裝置
WO2013111600A1 (ja) * 2012-01-27 2013-08-01 パナソニック株式会社 有機エレクトロルミネッセンス素子製造装置及び有機エレクトロルミネッセンス素子の製造方法
CN102969110B (zh) * 2012-11-21 2016-07-06 烟台正海磁性材料股份有限公司 一种提高钕铁硼磁力矫顽力的装置及方法
RU2521939C1 (ru) * 2013-04-24 2014-07-10 Общество с ограниченной ответственностью "Специальное Конструкторско-Технологическое Бюро КАСКАД" Устройство для получения электродного материала
DE102014014970B4 (de) * 2014-10-14 2020-01-02 NICE Solar Energy GmbH Vorrichtung und Verfahren zur Schichtdickenmessung für Dampfabscheideverfahren
CN104962865A (zh) * 2015-07-07 2015-10-07 京浜光学制品(常熟)有限公司 一种离子源辅助ito膜热蒸镀工艺
CN105088145B (zh) * 2015-08-19 2017-03-29 京东方科技集团股份有限公司 用于oled蒸发源的坩埚及其制造方法
CN106676476B (zh) * 2015-11-11 2019-10-25 清华大学 真空蒸镀方法
CN105695956B (zh) * 2016-03-30 2018-08-24 同济大学 一种气相沉积装置的使用方法
CN107012434A (zh) * 2017-05-27 2017-08-04 武汉天马微电子有限公司 一种蒸发源及真空蒸镀装置
KR20210028314A (ko) * 2019-09-03 2021-03-12 삼성디스플레이 주식회사 증착 장치
CN110670025B (zh) * 2019-11-13 2021-04-30 江苏实为半导体科技有限公司 一种便于组装的oled蒸镀源

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JPH09272703A (ja) * 1996-04-05 1997-10-21 Ulvac Japan Ltd 有機化合物用蒸発源及びこれを用いた蒸着重合装置
EP0865229A2 (en) * 1997-03-10 1998-09-16 Idemitsu Kosan Co., Ltd. Method for producing organic electroluminescent device
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JP2003013203A (ja) * 2001-07-04 2003-01-15 Matsushita Electric Ind Co Ltd 樹脂蒸着ユニットおよび成膜装置

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EP0652302A1 (en) * 1993-11-09 1995-05-10 General Vacuum Equipment Limited Vacuum web coating
JPH09272703A (ja) * 1996-04-05 1997-10-21 Ulvac Japan Ltd 有機化合物用蒸発源及びこれを用いた蒸着重合装置
EP0865229A2 (en) * 1997-03-10 1998-09-16 Idemitsu Kosan Co., Ltd. Method for producing organic electroluminescent device
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100363532C (zh) * 2004-01-29 2008-01-23 三菱日立制铁机械株式会社 真空蒸镀机
TWI607103B (zh) * 2016-11-08 2017-12-01 財團法人工業技術研究院 蒸鍍源及應用所述蒸鍍源的蒸鍍裝置

Also Published As

Publication number Publication date
US20050005857A1 (en) 2005-01-13
ATE555228T1 (de) 2012-05-15
TWI264473B (en) 2006-10-21
KR20040066104A (ko) 2004-07-23
EP1457582B1 (en) 2012-04-25
CN1575349A (zh) 2005-02-02
KR100958682B1 (ko) 2010-05-20
US20080156267A1 (en) 2008-07-03
EP1457582A1 (en) 2004-09-15
CN1302149C (zh) 2007-02-28
ES2391051T3 (es) 2012-11-21
EP1457582A4 (en) 2007-11-07

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