WO2002075019A1 - Systeme de traitement pour semi-conducteur - Google Patents

Systeme de traitement pour semi-conducteur Download PDF

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Publication number
WO2002075019A1
WO2002075019A1 PCT/JP2002/000780 JP0200780W WO02075019A1 WO 2002075019 A1 WO2002075019 A1 WO 2002075019A1 JP 0200780 W JP0200780 W JP 0200780W WO 02075019 A1 WO02075019 A1 WO 02075019A1
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WO
WIPO (PCT)
Prior art keywords
processing chamber
weight
gas
lining film
tin
Prior art date
Application number
PCT/JP2002/000780
Other languages
English (en)
Japanese (ja)
Inventor
Toshio Takagi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2002075019A1 publication Critical patent/WO2002075019A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Definitions

  • the present invention relates to a semiconductor processing apparatus for performing processes such as film formation, etching, oxidation, and diffusion.
  • semiconductor processing refers to forming a semiconductor layer insulating layer, a conductive layer, and the like in a predetermined pattern on a substrate to be processed, such as a semiconductor wafer or an LCD substrate, so that the semiconductor substrate is It refers to various processes performed to manufacture semiconductor devices and structures including wiring, electrodes, and the like connected to the semiconductor devices.
  • a single-wafer heat treatment apparatus for processing wafers one by one is known.
  • a mounting table (susceptor) for mounting a wafer is disposed on the bottom of the processing chamber, and a shaver having a large number of holes for supplying a process gas is provided above the mounting table (susceptor).
  • a head is installed.
  • An exhaust pipe for exhausting the inside of the processing chamber is connected to the processing chamber.
  • a heater for heating the wafer is provided below the susceptor.
  • CVD processing for forming a thin film on the wafer surface
  • SiH 4 , NH 3 , TEOS (tetraethylorthosilicate), Ta (OC 2 H 5 ) 5 ( pentoethoxytantalum: PET) is used.
  • CVD processing In the process, a process gas provides a film material by thermal decomposition or the like on the wafer surface, and a thin film is deposited on the wafer surface by the film material.
  • the decomposition products of these process gases also form so-called by-products on the surface of the wafer support, such as the susceptor and the casing wall of the processing chamber. It adheres as a material film.
  • the film adhering to parts other than the wafer in the processing chamber is accumulated by repeating the CVD processing.
  • the thickness of the by-product film is increased, the film is cracked due to a temperature change in the processing chamber or the like, and the film is separated. As a result, the exfoliated by-product film becomes particle-like, adheres to the wafer, and causes device defects.
  • a process of introducing a cleaning gas into the processing chamber and periodically removing a by-product film attached to the processing chamber is performed.
  • a cleaning gas for example, a gas of C 1 F 3 or NF 3 is preferably used because a high etching effect is always exerted regardless of the type of a film to be formed. Since the above-mentioned cleaning gas is extremely reactive, not only the by-product film but also the component itself to which the by-product film adheres inevitably undergoes an etching action. For example, when chlorine (C 1) or fluorine (F) in the cleaning gas reacts with the metal of the component, it produces metal fluoride or metal chloride. These fluorides and chlorides are re-emitted and diffused into the atmosphere of the processing chamber as a pollutant in the CVD process performed after the cleaning process. As a result, these are The problem is that they become trapped and contaminate the membrane.
  • An object of the present invention is to provide a semiconductor processing apparatus that protects stainless steel components that are easily corroded by a cleaning process in a processing chamber.
  • a semiconductor processing apparatus comprising: a processing chamber for storing a substrate to be processed;
  • An air supply system for supplying a reactive feed gas containing a halogen element into the processing chamber
  • the exhaust system includes an exhaust pipe made of stainless steel for connecting the processing chamber and an exhaust pump, and the exhaust pipe has an inner surface covered with a lining film.
  • the lining film is substantially composed of a ternary alloy containing nickel, phosphorus, tin, or tungsten.
  • a second aspect of the present invention is a semiconductor processing apparatus, comprising: a processing chamber for storing a substrate to be processed; An air supply system for supplying a reactive feed gas containing a halogen element into the processing chamber;
  • a movable part capable of moving toward and away from the processing chamber, and a stainless steel bellows connecting the movable part and the processing chamber to surround an airtight space communicating with the processing chamber;
  • a ternary alloy comprising: nickel, a ring, and tin or tungsten;
  • FIG. 1 is a cross-sectional view showing a single-wafer CVD apparatus as a semiconductor processing according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view showing a part of an exhaust system used in the apparatus shown in FIG.
  • FIG. 3 is a sectional view showing a part of bellows used in the apparatus shown in FIG.
  • FIG. 1 is a sectional view showing a single-wafer CVD apparatus which is a semiconductor processing according to an embodiment of the present invention.
  • the CVD apparatus 10 has an airtight processing chamber 11 for accommodating a semiconductor wafer W as a substrate to be processed.
  • Processing chamber 1 1 is made of conductive material, e.g. For example, it is made of aluminum and has a substantially cylindrical shape as a whole.
  • a susceptor 12 which is a mounting table on which the wafer W is mounted, is disposed in a state supported by a support member 13.
  • the susceptor 12 is made of, for example, aluminum nitride (A 1 N) or silicon carbide (SiC).
  • a 1 N aluminum nitride
  • SiC silicon carbide
  • a shower head 20 for introducing a feed gas such as a film forming gas or a cleaning gas is provided above the susceptor 12.
  • the shower head 20 is mounted so as to hermetically close the opening 15 formed in the ceiling 11 A of the processing chamber 11.
  • the lower surface of the head 2 0 to Shah Wa one faces the concentrically against the wafer W supported by the susceptor 1 2.
  • the shower head 20 is made of a conductive material, for example, aluminum, and has a substantially cylindrical shape as a whole. Inside the shower head 20, two independent gas flow paths 21A and 21B are formed. On a lower surface of the shower head 20, a plurality of gas discharge holes 22A and 22B connected to the respective gas flow paths 21A and 2IB are formed.
  • the first gas flow path 21 A is connected to a PET (T a (OC 2 H 2) via a stainless steel gas introduction pipe 24 A connected to the upper part of the shower head 20. 5) 5) Connected to gas source 25A.
  • the first gas flow path 21A is connected to the first gas introduction space 23A in the shower head 20, and communicates with the processing chamber 11 via the gas discharge hole 22A.
  • the second gas flow path 21 B is connected to an oxygen (O 2 ) gas source 25 B via a stainless copper gas inlet pipe 24 B connected to the upper part of the shower head 20. Connected.
  • the second gas channel 2 1 B is connected to the second gas introducing space 2 3 B in the head 2 0 to sheet catcher Wa of all, this is a processing chamber 1 1 and through the gas discharge holes 2 2 B Communicate.
  • the PET gas and the oxygen gas are introduced into the processing chamber 11 from the different gas discharge holes 22A and 22B, and are mixed in the processing chamber 11.
  • a cleaning gas for example, a chlorine trifluoride gas (C 1 F 3 ) gas source 25 C is connected to the second gas flow path 21 B via a valve.
  • the cleaning gas is introduced into the processing chamber 11 by switching a valve.
  • a plurality of, for example, four exhaust ports 19 are formed concentrically around the bottom of the processing chamber 11.
  • a stainless steel exhaust pipe 30 is connected to each exhaust port 19 so as to extend downward.
  • FIG. 1 for convenience, the exhaust port 1 on the side wall 11 B side is shown. Only 9 is shown.
  • Each exhaust pipe 30 is connected to a stainless steel common exhaust chamber 32 that collects gas exhausted from the processing chamber 11.
  • the exhaust chamber 32 is connected to exhaust means such as a vacuum pump 33 via a stainless steel common pipe 34 extending downward.
  • the common piping 34 is provided with a pressure regulator 35, a valve 36 having a stainless steel valve box, a PET trap 37, and the like.
  • a stainless steel bypass pipe 38 is connected to the common pipe 34 in parallel with the trap 37 (bypass valves are not shown).
  • a transfer port 26 through which the wafer W is loaded and unloaded is formed on the side wall 11 c of the processing chamber 11. The transfer port 26 is opened and closed by a gate valve 27 disposed outside the side wall 11C.
  • a light-transmitting window 40 is provided on the bottom plate 11D of the processing chamber 11 so as to face the susceptor 12.
  • the light transmission window 40 is disposed so as to hermetically close the opening 28 formed in the bottom plate 11D.
  • a light source chamber 41 On the lower side of the processing chamber 11, a light source chamber 41, which is separated from the processing chamber 11 by a light transmitting window 40, is formed.
  • a plurality of heating lamps 42 for heating the wafer W are provided in the light source room 41.
  • the heating lamp 42 is mounted on a turntable 44 that is rotatable at a predetermined speed by a rotation drive mechanism 43 such as a motor.
  • a plurality of, for example, three vertical lifter pins 52 made of quartz are arranged below the susceptor 12.
  • the lifter pin 52 extends upward from a lifter hole 58 formed in the susceptor 12 and can support the wafer W.
  • the lifter pins 52 are connected to each other at their bases by an annular connecting member 54 made of, for example, quartz so that they can move up and down together.
  • the connecting member 54 is fixed to the upper end of a push-up bar 56 that extends vertically through the bottom plate 11D. By lifting and lowering the push-up bar 56, the lifter pin 52 moves up and down with respect to the susceptor 12, and assists in loading and unloading of the wafer W with respect to the susceptor 12. .
  • the lower end of the push rod 56 is connected via a flange to the piston rod 63 of the actuator 62 which can reciprocate with respect to the processing chamber 11.
  • Actuator 62 is fixed to bottom plate 11D by attachment 64.
  • a stretchable stainless steel bellows 60 is provided at a portion where the push-up bar 56 passes through the bottom plate 11D.
  • the bellows 60 connects the flange at the lower end of the push-up bar 56 to the processing chamber 11, and surrounds an airtight space communicating with the processing chamber 11. With the use of the bellows 60, the push-up bar 56 can be moved up and down while the inside of the processing chamber 11 is kept airtight.
  • FIG. 2 is a sectional view showing a part of an exhaust system used in the apparatus shown in FIG.
  • FIG. 3 is a sectional view showing a part of a bellows 60 used in the apparatus shown in FIG.
  • the lining film provided for the exhaust pipe 30 and the bellows 60 is indicated by reference numeral 70.
  • the lining film 70 is substantially made of a ternary alloy including nickel (N i), ring (P), and soot (S n) or tungsten (W).
  • a ternary alloy including nickel (N i), ring (P), and soot (S n) or tungsten (W).
  • Into Ternary alloy of this is, 8 0% by weight or more of the two Tsu Kell, 1 to 5 weight 0/0 or less of Li emissions, 5 weight 0 /.
  • the lining film 70 is:! It has a thickness of ⁇ 30 ⁇ , preferably 10 ⁇ 20 ⁇ . With the thickness in this range, the effect of preventing corrosion of the cleaning gas is reliably exerted.
  • a method of forming the lining film 70 for example, a chemical plating (electroless plating) can be used.
  • a predetermined film thickness by performing the treatment a plurality of times.
  • the gate valve 27 is opened, and the wafer W is transferred from the transfer port 26 into the processing chamber 11 by the transfer device (not shown) and placed on the susceptor 12.
  • the heating lamp 32 is operated to heat the wafer W to a predetermined temperature, for example, a temperature of 400 to 500 ° C.
  • the exhaust pump 33 is operated, and the processing chamber 11 is brought into a reduced pressure state, for example, 13.3 to 667 Pa (0 :! to 5 Torr).
  • PET gas and 0 2 gas and force S Shah Wahe' de 2 0 different gas discharge holes 2 2 A, 2 2 are introduced into the processing chamber 1 1 from B processing chamber 1 1 of the exhaust during this is continued. In this way, CVD processing is performed on wafer W.
  • C 1 F 3 gas which is a cleaning gas, is used instead of the processing gas for CVD.
  • the cleaning gas is introduced into the processing chamber 11 through the gas discharge hole 22 B through the gas passage 21 B of the shower head 20, and during this time, the exhaust of the processing chamber 11 is exhausted. Is continued. At this time, the exhaust system is switched to the bypass piping 38 so that the taring gas does not pass through the PET trap 37.
  • the susceptor 12 is heated and maintained at, for example, about 200 to 300 ° C. by the heating lamp 42.
  • the lining film 70 has higher corrosion resistance than a normal nickel alloy, that is, a nickel-line binary alloy. Actuals to be described later As is evident from the experimental examples, the lining film 70 prevents chlorine (C 1) and fluorine (F) of the cleaning gas from penetrating deep inside. It can be effectively prevented.
  • the lining film 70 is made of a ternary alloy containing nickel, phosphorus, and tin, the alloy is deposited with high uniformity during the formation of the lining film. Therefore, a uniform lining film can be formed even for a member having a complicated shape, for example, a gas supply hole of bellows 60 or shower head 20.
  • the friction coefficient of the surface of the lining film becomes small. For this reason, it is possible to effectively prevent particles and the like from adhering to the surface of the lining film.
  • specimens A and B were prepared in which a nickel alloy coating was formed on the surface of a substrate made of aluminum.
  • the test piece, B was exposed to C 1 F 3 gas, which is a cleaning gas, under the conditions shown in Table 2.
  • C 1 F 3 gas which is a cleaning gas, under the conditions shown in Table 2.
  • the degree of penetration of fluorine (F) and chlorine (C1) in the thickness direction of the nickel alloy coating in the test pieces A and B after the treatment was evaluated by measuring the concentrations thereof. was done. Coating conditions
  • these nickel alloys have corrosion resistance not only to C 1 F 3 gas but also to other reactive gases containing a halogen element.
  • Such other reactive gases include etching gases and Includes NF 3 , CF 3 , HC 1 HF, F 2 , Cl 2, etc. used as cleaning gas.
  • components such as exhaust pipes 30 and bellows 60 are used instead. It can also be used as its own material.
  • the present invention can be applied to a semiconductor processing apparatus other than the CVD apparatus exemplified in the above embodiment, for example, an etching apparatus, a polishing apparatus, a sputter apparatus, and the like. Further, the present invention can be applied to a substrate to be processed other than a semiconductor wafer, for example, an LCD substrate, a glass substrate, and the like.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Cette invention porte sur un système de traitement pour semi-conducteur, comprenant une chambre de traitement (11) servant à stocker un substrat (W) à traiter. Un système d'alimentation en gaz est utilisé pour alimenter la chambre de traitement (11) en gaz d'alimentation réactif contenant un élément halogène. Un système d'échappement est utilisé afin de vider la chambre de traitement (11). Ce système d'échappement comprend un tuyau d'échappement (30) en acier inoxydable, couplant la chambre de traitement (11) et une pompe d'échappement (33). Le tuyau d'échappement (30) présente une surface interne revêtue d'une pellicule de revêtement (70). Cette pellicule de revêtement (70) comprend sensiblement un alliage ternaire composé de nickel, de phosphore et d'étain ou de tungstène.
PCT/JP2002/000780 2001-03-19 2002-01-31 Systeme de traitement pour semi-conducteur WO2002075019A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001078709A JP5001489B2 (ja) 2001-03-19 2001-03-19 処理装置
JP2001-78709 2001-03-19

Publications (1)

Publication Number Publication Date
WO2002075019A1 true WO2002075019A1 (fr) 2002-09-26

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PCT/JP2002/000780 WO2002075019A1 (fr) 2001-03-19 2002-01-31 Systeme de traitement pour semi-conducteur

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WO (1) WO2002075019A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3872027B2 (ja) 2003-03-07 2007-01-24 株式会社東芝 クリーニング方法及び半導体製造装置
JP2009057264A (ja) * 2007-09-03 2009-03-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造用の排気部材
DE202017104061U1 (de) * 2017-07-07 2018-10-09 Aixtron Se Beschichtungseinrichtung mit beschichteter Sendespule

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0243353A (ja) * 1988-08-04 1990-02-13 Tadahiro Omi 金属酸化処理装置及び金属酸化処理方法
JPH0250993B2 (fr) * 1984-06-06 1990-11-06 Uemura Kogyo Kk
JPH05295547A (ja) * 1992-04-20 1993-11-09 Shin Etsu Chem Co Ltd 高純度炭化ケイ素製造装置
JPH09152154A (ja) * 1995-11-30 1997-06-10 Hitachi Ltd 排気方法および装置ならびにそれを用いて構成された半導体製造装置
JPH1079380A (ja) * 1996-07-12 1998-03-24 Tokyo Electron Ltd 改質方法及びその装置
JPH10189488A (ja) * 1996-12-20 1998-07-21 Tokyo Electron Ltd Ｃｖｄ成膜方法
JPH11236971A (ja) * 1997-12-02 1999-08-31 Tadahiro Omi 表面処理が施されたベローズ
JP2954716B2 (ja) * 1990-03-08 1999-09-27 三菱アルミニウム株式会社 フッ化不働態膜を形成した工業材料およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59140389A (ja) * 1983-01-31 1984-08-11 Nippon Steel Corp ステンレス薄板の製造法
JP3094000B2 (ja) * 1997-09-12 2000-10-03 昭和電工株式会社 フッ化表面層を有する金属材料もしくは金属皮膜ならびにフッ化方法
JPH11335842A (ja) * 1998-05-22 1999-12-07 Hitachi Ltd Ｃｖｄ装置及びその装置のクリ−ニング方法
JP2002004066A (ja) * 2000-06-22 2002-01-09 Osaka Gas Co Ltd 耐熱部材およびその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0250993B2 (fr) * 1984-06-06 1990-11-06 Uemura Kogyo Kk
JPH0243353A (ja) * 1988-08-04 1990-02-13 Tadahiro Omi 金属酸化処理装置及び金属酸化処理方法
JP2954716B2 (ja) * 1990-03-08 1999-09-27 三菱アルミニウム株式会社 フッ化不働態膜を形成した工業材料およびその製造方法
JPH05295547A (ja) * 1992-04-20 1993-11-09 Shin Etsu Chem Co Ltd 高純度炭化ケイ素製造装置
JPH09152154A (ja) * 1995-11-30 1997-06-10 Hitachi Ltd 排気方法および装置ならびにそれを用いて構成された半導体製造装置
JPH1079380A (ja) * 1996-07-12 1998-03-24 Tokyo Electron Ltd 改質方法及びその装置
JPH10189488A (ja) * 1996-12-20 1998-07-21 Tokyo Electron Ltd Ｃｖｄ成膜方法
JPH11236971A (ja) * 1997-12-02 1999-08-31 Tadahiro Omi 表面処理が施されたベローズ

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Publication number Publication date
JP5001489B2 (ja) 2012-08-15
JP2002275632A (ja) 2002-09-25

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