WO2002029877A1 - Dispositif de traitement par depression - Google Patents

Dispositif de traitement par depression Download PDF

Info

Publication number
WO2002029877A1
WO2002029877A1 PCT/JP2001/008624 JP0108624W WO0229877A1 WO 2002029877 A1 WO2002029877 A1 WO 2002029877A1 JP 0108624 W JP0108624 W JP 0108624W WO 0229877 A1 WO0229877 A1 WO 0229877A1
Authority
WO
WIPO (PCT)
Prior art keywords
conveyance port
wall surface
gate liner
processing device
maintenance
Prior art date
Application number
PCT/JP2001/008624
Other languages
English (en)
French (fr)
Inventor
Kosuke Imafuku
Tsuyoshi Hida
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US10/398,031 priority Critical patent/US20040083970A1/en
Priority to JP2002533359A priority patent/JP4119747B2/ja
Priority to AU2001290329A priority patent/AU2001290329A1/en
Publication of WO2002029877A1 publication Critical patent/WO2002029877A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
PCT/JP2001/008624 2000-10-02 2001-10-01 Dispositif de traitement par depression WO2002029877A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/398,031 US20040083970A1 (en) 2000-10-02 2001-10-01 Vacuum processing device
JP2002533359A JP4119747B2 (ja) 2000-10-02 2001-10-01 真空処理装置
AU2001290329A AU2001290329A1 (en) 2000-10-02 2001-10-01 Vacuum processing device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000302124 2000-10-02
JP2000-302124 2000-10-02

Publications (1)

Publication Number Publication Date
WO2002029877A1 true WO2002029877A1 (fr) 2002-04-11

Family

ID=18783534

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/008624 WO2002029877A1 (fr) 2000-10-02 2001-10-01 Dispositif de traitement par depression

Country Status (6)

Country Link
US (1) US20040083970A1 (ja)
JP (1) JP4119747B2 (ja)
CN (1) CN1310292C (ja)
AU (1) AU2001290329A1 (ja)
TW (1) TWI290589B (ja)
WO (1) WO2002029877A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004100039A (ja) * 2002-07-19 2004-04-02 Shin Etsu Chem Co Ltd 希土類酸化物溶射部材および溶射用粉
JP2005531157A (ja) * 2002-06-27 2005-10-13 ラム　リサーチ　コーポレーション 生産性を向上するプラズマ反応器用溶射イットリア含有被膜
JP2007515060A (ja) * 2003-11-25 2007-06-07 アプライド　マテリアルズ　インコーポレイテッド 窒化ケイ素の熱化学気相堆積
JP2011176365A (ja) * 2003-12-17 2011-09-08 Tokyo Electron Ltd 化学的酸化物除去（ＣｈｅｍｉｃａｌＯｘｉｄｅＲｅｍｏｖａｌ）処理システム及び方法
JP2013168675A (ja) * 2013-05-08 2013-08-29 Tokyo Electron Ltd 処理容器およびプラズマ処理装置

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010062209A (ko) * 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
CN101250680B (zh) * 2000-12-12 2013-06-26 东京毅力科创株式会社 等离子体处理容器内部件以及等离子体处理装置
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7166166B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7780786B2 (en) * 2002-11-28 2010-08-24 Tokyo Electron Limited Internal member of a plasma processing vessel
WO2004095532A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited A barrier layer for a processing element and a method of forming the same
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
US20050199183A1 (en) * 2004-03-09 2005-09-15 Masatsugu Arai Plasma processing apparatus
JP4010314B2 (ja) * 2004-12-17 2007-11-21 東京エレクトロン株式会社 ゲートバルブ装置、処理システム及びシール部材の交換方法
JP4437743B2 (ja) * 2004-12-21 2010-03-24 東京エレクトロン株式会社 真空処理装置用開閉機構及び真空処理装置
JP4629545B2 (ja) * 2005-09-29 2011-02-09 株式会社日立ハイテクノロジーズ 真空処理装置
CN100423186C (zh) * 2005-10-31 2008-10-01 中芯国际集成电路制造(上海)有限公司 一种用于真空系统防止晶片颗粒缺陷的方法及其装置
JP4332748B2 (ja) * 2005-12-27 2009-09-16 セイコーエプソン株式会社 セラミックス膜の製造方法およびセラミックス膜製造装置
DE102006043813B4 (de) * 2006-02-21 2011-05-19 Von Ardenne Anlagentechnik Gmbh Schieberventil für eine Beschichtungsanlage und Beschichtungsanlage
JP2008192802A (ja) * 2007-02-05 2008-08-21 Spansion Llc 半導体製造装置およびその製造方法
US20100021273A1 (en) * 2008-07-28 2010-01-28 Applied Materials, Inc. Concrete vacuum chamber
CN102994977B (zh) * 2011-09-08 2015-01-14 北京北方微电子基地设备工艺研究中心有限责任公司 腔室装置和具有该腔室装置的基片处理设备
NL2007658C2 (nl) * 2011-10-26 2013-05-01 Smit Ovens Bv Inrichting voor het verhitten van een substraat.
JP6812264B2 (ja) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置
TW202302907A (zh) * 2021-05-12 2023-01-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 化學氣相沉積設備及膜形成方法
CN115354300B (zh) * 2022-08-25 2023-11-21 拓荆科技(上海)有限公司 薄膜沉积设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230125A (ja) * 1988-07-19 1990-01-31 Tokyo Electron Ltd プラズマ処理装置
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
US5769952A (en) * 1994-06-07 1998-06-23 Tokyo Electron, Ltd. Reduced pressure and normal pressure treatment apparatus

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4198442A (en) * 1977-10-31 1980-04-15 Howmet Turbine Components Corporation Method for producing elevated temperature corrosion resistant articles
US4593007A (en) * 1984-12-06 1986-06-03 The Perkin-Elmer Corporation Aluminum and silica clad refractory oxide thermal spray powder
JP2644309B2 (ja) * 1988-11-04 1997-08-25 株式会社東芝 半導体製造装置
US5891350A (en) * 1994-12-15 1999-04-06 Applied Materials, Inc. Adjusting DC bias voltage in plasma chambers
JP3362113B2 (ja) * 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
US6756082B1 (en) * 1999-02-05 2004-06-29 Siemens Westinghouse Power Corporation Thermal barrier coating resistant to sintering

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230125A (ja) * 1988-07-19 1990-01-31 Tokyo Electron Ltd プラズマ処理装置
US5769952A (en) * 1994-06-07 1998-06-23 Tokyo Electron, Ltd. Reduced pressure and normal pressure treatment apparatus
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005531157A (ja) * 2002-06-27 2005-10-13 ラム　リサーチ　コーポレーション 生産性を向上するプラズマ反応器用溶射イットリア含有被膜
JP2010283361A (ja) * 2002-06-27 2010-12-16 Lam Res Corp 生産性を向上するプラズマ反応器用溶射イットリア含有被膜
KR101030935B1 (ko) 2002-06-27 2011-04-28 램 리써치 코포레이션 플라즈마 반응기용 용사 이트리아 함유 코팅
JP2004100039A (ja) * 2002-07-19 2004-04-02 Shin Etsu Chem Co Ltd 希土類酸化物溶射部材および溶射用粉
JP2007515060A (ja) * 2003-11-25 2007-06-07 アプライド　マテリアルズ　インコーポレイテッド 窒化ケイ素の熱化学気相堆積
JP4801591B2 (ja) * 2003-11-25 2011-10-26 アプライド マテリアルズ インコーポレイテッド 窒化ケイ素の熱化学気相堆積
JP2011176365A (ja) * 2003-12-17 2011-09-08 Tokyo Electron Ltd 化学的酸化物除去（ＣｈｅｍｉｃａｌＯｘｉｄｅＲｅｍｏｖａｌ）処理システム及び方法
JP2013168675A (ja) * 2013-05-08 2013-08-29 Tokyo Electron Ltd 処理容器およびプラズマ処理装置

Also Published As

Publication number Publication date
JPWO2002029877A1 (ja) 2004-02-19
CN1468444A (zh) 2004-01-14
TWI290589B (en) 2007-12-01
JP4119747B2 (ja) 2008-07-16
US20040083970A1 (en) 2004-05-06
CN1310292C (zh) 2007-04-11
AU2001290329A1 (en) 2002-04-15

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