WO2002029493A1 - Composition de resine photosensible servant a creer une couche isolante, couche isolante d'elements electroluminescents organiques et procede de creation - Google Patents

Composition de resine photosensible servant a creer une couche isolante, couche isolante d'elements electroluminescents organiques et procede de creation Download PDF

Info

Publication number
WO2002029493A1
WO2002029493A1 PCT/JP2001/004883 JP0104883W WO0229493A1 WO 2002029493 A1 WO2002029493 A1 WO 2002029493A1 JP 0104883 W JP0104883 W JP 0104883W WO 0229493 A1 WO0229493 A1 WO 0229493A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulation film
photoresist composition
forming
organic electroluminescence
electroluminescence element
Prior art date
Application number
PCT/JP2001/004883
Other languages
English (en)
French (fr)
Inventor
Motofumi Kashiwagi
Noriyuki Mitao
Original Assignee
Nippon Zeon Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Zeon Co., Ltd. filed Critical Nippon Zeon Co., Ltd.
Priority to KR10-2003-7004427A priority Critical patent/KR20040004383A/ko
Priority to EP01936938A priority patent/EP1321821A4/en
Priority to US10/381,432 priority patent/US7008883B2/en
Publication of WO2002029493A1 publication Critical patent/WO2002029493A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Materials For Photolithography (AREA)
PCT/JP2001/004883 2000-09-29 2001-06-08 Composition de resine photosensible servant a creer une couche isolante, couche isolante d'elements electroluminescents organiques et procede de creation WO2002029493A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR10-2003-7004427A KR20040004383A (ko) 2000-09-29 2001-06-08 절연막형성용 포토레지스트 조성물, 유기 엘렉트로루미네센스 소자용 절연막 및 그 제조방법
EP01936938A EP1321821A4 (en) 2000-09-29 2001-06-08 PHOTORESIST COMPOSITION FOR TRAINING AN INSULATION FILM, INSULATION FILM FOR AN ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR ITS TRAINING
US10/381,432 US7008883B2 (en) 2000-09-29 2001-06-08 Photoresist composition for forming an insulation film, insulation film for organic electroluminescence devices and process for producing the insulation film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-298678 2000-09-29
JP2000298678 2000-09-29

Publications (1)

Publication Number Publication Date
WO2002029493A1 true WO2002029493A1 (fr) 2002-04-11

Family

ID=18780609

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2001/004883 WO2002029493A1 (fr) 2000-09-29 2001-06-08 Composition de resine photosensible servant a creer une couche isolante, couche isolante d'elements electroluminescents organiques et procede de creation

Country Status (5)

Country Link
US (1) US7008883B2 (ja)
EP (1) EP1321821A4 (ja)
KR (1) KR20040004383A (ja)
TW (1) TW594395B (ja)
WO (1) WO2002029493A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003100524A1 (fr) * 2002-05-27 2003-12-04 Zeon Corporation Composition de resine sensible au rayonnement, procede de production d'un substrat comprenant couche de resine a motifs, et utilisation de la composition de resine
GB2395358B (en) * 2002-09-17 2006-08-02 Dainippon Printing Co Ltd Method of manufacturing a light emitting display panel and a light emitting display panel

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1459393A1 (en) * 2001-12-10 2004-09-22 Koninklijke Philips Electronics N.V. El display device and method of manufacturing the same
US7221095B2 (en) * 2003-06-16 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method for fabricating light emitting device
KR100653265B1 (ko) * 2004-04-19 2006-12-06 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광 소자 및 그 제조방법
JP4556757B2 (ja) * 2004-06-23 2010-10-06 日立電線株式会社 半導体装置の製造方法
KR100682905B1 (ko) * 2004-12-01 2007-02-15 삼성전자주식회사 단방향 투명 광학계의 제조 방법
DE102004063416A1 (de) * 2004-12-23 2006-07-06 Az Electronic Materials (Germany) Gmbh Verfahren zur Herstellung einer Photoresistlösung
KR100729256B1 (ko) * 2005-01-13 2007-06-15 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 포토레지스트 패턴의형성 방법 및 반도체 소자의 보호막 형성방법
KR101142999B1 (ko) * 2005-02-03 2012-05-08 주식회사 삼양이엠에스 포토레지스트 조성물, 상기 포토레지스트 조성물을 이용한패턴의 형성 방법 및 상기 포토레지스트 조성물을 이용한박막 트랜지스터 표시판의 제조 방법
KR100858823B1 (ko) * 2007-05-30 2008-09-17 삼성에스디아이 주식회사 유기 발광 표시 장치
KR101113063B1 (ko) * 2008-05-22 2012-02-15 주식회사 엘지화학 폴리이미드와 노볼락 수지를 포함하는 감광성 수지 조성물
CN102047178B (zh) * 2008-05-29 2014-05-28 旭化成电子材料株式会社 感光性树脂组合物
KR101249605B1 (ko) * 2008-05-29 2013-04-03 아사히 가세이 이-매터리얼즈 가부시키가이샤 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법 및 반도체 장치
TWI475124B (zh) 2009-05-22 2015-03-01 Samsung Display Co Ltd 薄膜沉積設備
JP5620146B2 (ja) 2009-05-22 2014-11-05 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置
KR101074792B1 (ko) * 2009-06-12 2011-10-19 삼성모바일디스플레이주식회사 박막 증착 장치
JP5328726B2 (ja) * 2009-08-25 2013-10-30 三星ディスプレイ株式會社 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法
JP5677785B2 (ja) * 2009-08-27 2015-02-25 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法
US20110052795A1 (en) * 2009-09-01 2011-03-03 Samsung Mobile Display Co., Ltd. Thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same
US8876975B2 (en) * 2009-10-19 2014-11-04 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101084184B1 (ko) * 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 박막 증착 장치
KR101174875B1 (ko) * 2010-01-14 2012-08-17 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101193186B1 (ko) 2010-02-01 2012-10-19 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101156441B1 (ko) * 2010-03-11 2012-06-18 삼성모바일디스플레이주식회사 박막 증착 장치
KR101202348B1 (ko) 2010-04-06 2012-11-16 삼성디스플레이 주식회사 박막 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조 방법
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101223723B1 (ko) 2010-07-07 2013-01-18 삼성디스플레이 주식회사 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101738531B1 (ko) 2010-10-22 2017-05-23 삼성디스플레이 주식회사 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치
KR101723506B1 (ko) 2010-10-22 2017-04-19 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR20120045865A (ko) 2010-11-01 2012-05-09 삼성모바일디스플레이주식회사 유기층 증착 장치
KR20120065789A (ko) 2010-12-13 2012-06-21 삼성모바일디스플레이주식회사 유기층 증착 장치
KR101760897B1 (ko) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 증착원 및 이를 구비하는 유기막 증착 장치
KR101852517B1 (ko) 2011-05-25 2018-04-27 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101840654B1 (ko) 2011-05-25 2018-03-22 삼성디스플레이 주식회사 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법
KR101857249B1 (ko) 2011-05-27 2018-05-14 삼성디스플레이 주식회사 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치
KR101826068B1 (ko) 2011-07-04 2018-02-07 삼성디스플레이 주식회사 유기층 증착 장치
CN103988127B (zh) 2011-12-09 2019-04-19 旭化成株式会社 感光性树脂组合物、固化浮雕图案的制造方法、半导体装置及显示体装置
JP5851307B2 (ja) * 2012-03-29 2016-02-03 東京応化工業株式会社 遮光層形成用感光性基材組成物の製造方法
TWI490653B (zh) * 2013-09-10 2015-07-01 Chi Mei Corp 正型感光性樹脂組成物及其圖案形成方法
KR102602193B1 (ko) * 2016-08-12 2023-11-15 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR20210014966A (ko) * 2019-07-31 2021-02-10 엘지디스플레이 주식회사 기판 홀을 포함하는 디스플레이 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04352101A (ja) * 1991-05-30 1992-12-07 Japan Synthetic Rubber Co Ltd マイクロレンズ用感放射線性樹脂組成物
JPH07140648A (ja) * 1993-11-18 1995-06-02 Tosoh Corp 熱硬化型感光材料
JP2000256565A (ja) * 1999-03-08 2000-09-19 Idemitsu Kosan Co Ltd 蛍光変換膜用樹脂組成物、蛍光変換膜およびカラー化有機エレクトロルミネッセンス素子
JP2001005175A (ja) * 1999-06-23 2001-01-12 Victor Co Of Japan Ltd 情報記録媒体用フォトレジスト

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0704718B1 (en) 1989-12-01 2002-03-20 Tosoh Corporation Positive photosensitive composition for forming lenses
US5362597A (en) 1991-05-30 1994-11-08 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester
JPH09143420A (ja) * 1995-09-21 1997-06-03 Asahi Glass Co Ltd 低誘電率樹脂組成物
JPH09278849A (ja) 1996-04-12 1997-10-28 Nippon Kayaku Co Ltd 樹脂組成物、レジストインキ樹脂組成物及びこれらの硬化物
JPH09325210A (ja) 1996-05-31 1997-12-16 Nippon Kayaku Co Ltd 樹脂組成物、カラーフィルター保護膜用樹脂組成物及びその硬化物
JP3228183B2 (ja) * 1996-12-02 2001-11-12 日本電気株式会社 絶縁膜ならびにその絶縁膜を有する半導体装置とその製造方法
US6104092A (en) * 1997-04-02 2000-08-15 Nec Corporation Semiconductor device having amorphous carbon fluoride film of low dielectric constant as interlayer insulation material
JP2001234163A (ja) * 2000-02-25 2001-08-28 Sony Corp 発光性結晶粒子、発光性結晶粒子組成物、表示用パネル及び平面型表示装置
US6984476B2 (en) * 2002-04-15 2006-01-10 Sharp Kabushiki Kaisha Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device
JP2004152920A (ja) * 2002-10-30 2004-05-27 Fujitsu Ltd 半導体装置の製造方法及び半導体製造工程の管理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04352101A (ja) * 1991-05-30 1992-12-07 Japan Synthetic Rubber Co Ltd マイクロレンズ用感放射線性樹脂組成物
JPH07140648A (ja) * 1993-11-18 1995-06-02 Tosoh Corp 熱硬化型感光材料
JP2000256565A (ja) * 1999-03-08 2000-09-19 Idemitsu Kosan Co Ltd 蛍光変換膜用樹脂組成物、蛍光変換膜およびカラー化有機エレクトロルミネッセンス素子
JP2001005175A (ja) * 1999-06-23 2001-01-12 Victor Co Of Japan Ltd 情報記録媒体用フォトレジスト

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1321821A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003100524A1 (fr) * 2002-05-27 2003-12-04 Zeon Corporation Composition de resine sensible au rayonnement, procede de production d'un substrat comprenant couche de resine a motifs, et utilisation de la composition de resine
GB2395358B (en) * 2002-09-17 2006-08-02 Dainippon Printing Co Ltd Method of manufacturing a light emitting display panel and a light emitting display panel
US7404751B2 (en) 2002-09-17 2008-07-29 Dai Nippon Printing Co., Ltd. Method of manufacturing a light emitting display panel and a light emitting display panel

Also Published As

Publication number Publication date
US7008883B2 (en) 2006-03-07
EP1321821A4 (en) 2004-06-23
EP1321821A1 (en) 2003-06-25
TW594395B (en) 2004-06-21
US20040096771A1 (en) 2004-05-20
KR20040004383A (ko) 2004-01-13

Similar Documents

Publication Publication Date Title
WO2002029493A1 (fr) Composition de resine photosensible servant a creer une couche isolante, couche isolante d'elements electroluminescents organiques et procede de creation
EP1107307A4 (en) SEMICONDUCTOR HOUSING, SEMICONDUCTOR DEVICE, ELECTRONIC ELEMENT AND PRODUCTION OF A SEMICONDUCTOR HOUSING
CA2249062A1 (en) Electronic device and method for fabricating the same
TW329539B (en) The semiconductor device and its manufacturing method
EP1333483A4 (en) DOUBLE DAMASCELLING STRUCTURE ATTACK METHOD
WO2008114644A1 (ja) レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物
EP1427007A3 (en) Electrodes for semiconductor device and method for manufacturing the same
WO2002080239A3 (en) Process for forming sub-lithographic photoresist features
WO2005013320A3 (en) A semiconductor device having an organic anti-reflective coating (arc) and method therefor
TW353775B (en) Production of semiconductor device
EP1653789A4 (en) PRINTED BOARD AND PROCESS FOR PRODUCING THE SAME
WO2003023865A1 (fr) Dispositif a semi-conducteurs et son procede de fabrication
TW200501852A (en) Method for producing wired circuit board
WO2003036686A3 (en) Method of patterning electrically conductive polymers
WO2007001653A3 (en) Reticle alignment technique
TW200736838A (en) Substrate, method for producing the same, and patterning process using the same
WO2003010814A1 (fr) Procede de fabrication d'un composant a semiconducteur
WO2001099164A3 (en) Patterning method using a removable inorganic antireflection coating
WO2004055593A3 (en) Process for producing a heat resistant relief structure
WO2004102277A3 (en) Method providing an improved bi-layer photoresist pattern
TW346664B (en) Mixed-mode IC separated spacer structure and process for producing the same
JPS5710926A (en) Manufacture of semiconductor device
WO2003026018A1 (fr) Dispositif a semi-conducteur et son procede de production
EP0978869A3 (en) Method for forming a minute resist pattern and method for forming a gate electrode
TW329044B (en) Method for defining via pattern

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): KR US

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020037004427

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 10381432

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2001936938

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2001936938

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020037004427

Country of ref document: KR

WWW Wipo information: withdrawn in national office

Ref document number: 2001936938

Country of ref document: EP