WO2001081010A1 - Improved anti-reflective coating compositions comprising polymerized aminoplasts - Google Patents

Improved anti-reflective coating compositions comprising polymerized aminoplasts Download PDF

Info

Publication number
WO2001081010A1
WO2001081010A1 PCT/US2000/024595 US0024595W WO0181010A1 WO 2001081010 A1 WO2001081010 A1 WO 2001081010A1 US 0024595 W US0024595 W US 0024595W WO 0181010 A1 WO0181010 A1 WO 0181010A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
polymer
reflective coating
group
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2000/024595
Other languages
English (en)
French (fr)
Inventor
Rama Puligadda
Runhui Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brewer Science Inc
Original Assignee
Brewer Science Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brewer Science Inc filed Critical Brewer Science Inc
Priority to KR1020027013840A priority Critical patent/KR100912975B1/ko
Priority to EP00961646A priority patent/EP1284829A4/en
Priority to JP2001578095A priority patent/JP4886146B2/ja
Priority to AU2000273568A priority patent/AU2000273568A1/en
Publication of WO2001081010A1 publication Critical patent/WO2001081010A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11Anti-reflection coatings
    • G02B1/111Anti-reflection coatings using layers comprising organic materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/20Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen
    • C08L61/26Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds
    • C08L61/28Condensation polymers of aldehydes or ketones with only compounds containing hydrogen attached to nitrogen of aldehydes with heterocyclic compounds with melamine
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31667Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31855Of addition polymer from unsaturated monomers
    • Y10T428/31859Next to an aldehyde or ketone condensation product
    • Y10T428/31862Melamine-aldehyde
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31942Of aldehyde or ketone condensation product

Definitions

  • the present invention is broadly concerned with anti-reflective compositions and methods of forming the compositions for use as anti-reflective coating (ARC) layers on substrates during integrated circuit manufacturing processes. More particularly, the inventive compositions are formed by polymerizing aminoplasts (e.g., tnelamine, benzoguanamine) in an acidic environment under elevated temperatures to yield cross-linkable, UV absorbing, fast etching compositions.
  • aminoplasts e.g., tnelamine, benzoguanamine
  • a frequent problem encountered by photoresists during the manufacturing of semiconductor devices is that activating radiation is reflected back into the photoresist by the substrate on which it is supported. Such reflectivity tends to cause blurred patterns which degrade the resolution of the photoresist. Degradation of the image in the processed photoresist is particularly problematic when the substrate is non-planar and/or highly reflective.
  • One approach to address this problem is the use of a bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer.
  • BARC bottom anti-reflective coating
  • the BARC compositions typically consist of an organic polymer which provides coating properties and a dye for absorbing light.
  • the dye is either blended into the composition or chemically bonded to the polymer.
  • Thermosetting BARC's contain a cross-linking agent in addition to the polymer and dye. Cross-linking must be initiated, and this is typically accomplished by an acid catalyst present in the composition. As a result of all these ingredients which are required to perform specific and different functions, prior art BARC compositions are fairly complex.
  • U.S. Patent No. 5,939,510 to Sato et al. discloses a BARC composition which comprises a UV absorber and a cross-linking agent.
  • the UV absorber is a benzophenone compound or an aromatic azomethine compound having at least one unsubstituted or alkyl-substituted amino group on the aryl groups.
  • the cross-linking agent disclosed by Sato et al. is a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms of the molecule.
  • the Sato et al. composition suffers from two major drawbacks. First, in the two-component composition disclosed, the Sato et al.
  • composition does not include a polymeric material thus resulting in insufficient coverage on the surfaces and edges of the substrate features.
  • the UV absorber disclosed by Sato et al. is physically mixed with the cross-linking agent rather than chemically bonded to some component of the composition. As a result, the UV absorber will often sublime, and in many cases sublime and diffuse into the subsequently applied photoresist layer.
  • the present invention overcomes these problems by broadly providing improved anti-reflective compositions which are formed from a minimal number of components (e.g., two or less) and which exhibit the properties necessary in an effective
  • anti-reflective compositions include polymers comprising monomers derived from compounds of Formula I and mixtures thereof.
  • each X is individually selected from the group consisting of NR 2 (with the nitrogen atom being bonded to the ring structure) and phenyl groups, where each R is individually selected from the group consisting of hydrogen, alkoxyalkyl groups, carboxyl groups, and hydroxymethyl groups.
  • Preferred compounds of Formula I include the following:
  • each X is individually selected from the group consisting of NR 2 (with the nitrogen atom being bonded to the ring structure) and phenyl groups, where each R is individually selected from the group consisting of hydrogen, alkoxyalkyl groups, carboxyl groups, and hydroxymethyl groups; and "M,” and “M 2 " represent a molecule (e.g., a chromophore or another monomer derived from the compound of Formula I) bonded to X' or X".
  • “monomers derived from the compounds of Formula I” would include those compounds where any of the constituents (i.e., any of the X groups, and preferably 1-2 of the X groups) is bonded to another molecule.
  • the polymerized monomers are preferably joined by linkage groups selected from the group consisting of -CH 2 -, -CH 2 -O-CH 2 , and mixtures thereof, with the linkage groups being bonded to nitrogen atoms on the respective monomers.
  • linkage groups selected from the group consisting of -CH 2 -, -CH 2 -O-CH 2 , and mixtures thereof, with the linkage groups being bonded to nitrogen atoms on the respective monomers.
  • linkage groups selected from the group consisting of -CH 2 -, -CH 2 -O-CH 2 , and mixtures thereof, with the linkage groups being bonded to nitrogen atoms on the respective monomers.
  • linkage groups selected from the group consisting of -CH 2 -, -CH 2 -O-CH 2 , and mixtures thereof, with the linkage groups being bonded to nitrogen atoms on the respective monomers.
  • Formula III demonstrates two methoxymethylated melamine moieties joined via a - CH
  • Formula IV illustrates two benzoguanamine moieties joined via CH 2 linkage groups.
  • Formula V illustrates two methoxymethylated melamine moieties having a chromophore (2,4-hexadienoic acid) bonded thereto and joined via CH 2 linkage groups.
  • the inventive compositions are formed by providing a dispersion of the compounds of Formula I in a dispersant (preferably an organic solvent such as ethyl lactate), and adding an acid (such as p-toluenesulfonic acid) to the dispersion either prior to or simultaneous to heating of the dispersion to a temperature of at least about 70°C, and preferably at least about 120°C.
  • a dispersant preferably an organic solvent such as ethyl lactate
  • an acid such as p-toluenesulfonic acid
  • the quantity of acid added should be from about 0.001-1 moles per liter of dispersant, and preferably from about 0.01-0.5 moles of acid per liter of dispersant.
  • the heating step should be carried out for at least about 2 hours, and preferably from about 4-6 hours. In applications where only benzoguanamine-based moieties are utilized, the heating step should be carried out for a time period of less than about 7 hours, and preferably from about 5.5
  • Heating the starting compounds under acidic conditions causes the compounds to polymerize by forming the previously described linkage groups.
  • the polymers resulting from the heating step should have an average molecular weight of at least about 1,000 Daltons, preferably at least about 5,000 Daltons, and more preferably at least about 5,000-20,000 Daltons.
  • the resulting anti-reflective composition should have a decrease of at least about 20%, preferably at least about 40%, and more preferably from about 40-70% in methoxymethylol (-CH 2 OCH 3 ) groups than were present in the starting dispersions of Formula I compounds, with the quantity of methoxymethylol groups being determined by the titration procedure as herein defined.
  • inventive polymer compositions provide significant advantages over prior art compositions in that the polymerized compositions alone act as conventional anti-reflective coating polymer binders, cross-linking agents, and chromophores, thus greatly simplifying the anti-reflective coating system.
  • a chromophore e.g., 2,4-hexadienoic acid, 3-hydroxy-2-naphthoic acid
  • a chromophore can be mixed with the starting dispersion prior to acid and heat treatment. During subsequent acid treatment, the chromophore will chemically bond to the monomers during polymerization.
  • the resulting polymerized composition is mixed with a solvent to form an anti- reflective coating composition.
  • Suitable solvents include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, and cyclohexanone.
  • the anti-reflective coating composition is subsequently applied to the surface of a substrate (e.g., silicon wafer) by conventional methods, such as by spin-coating, to form an anti-reflective coating layer on the substrate.
  • the substrate and layer combination is baked at temperatures of at least about 160°C.
  • the baked layer will generally have a thickness of anywhere from about 500A to about 200 ⁇ .
  • an anti-reflective composition is formed by preparing a dispersion including, in a dispersant (e.g., propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate), a quantity of the compound of Formula I and a polymer having cross-linking sites therein.
  • a dispersant e.g., propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate
  • the composition should comprise at least about 1.5% by weight of the polymer, and preferably from about 2.0-20% by weight of the polymer, based upon the total weight of the solids in the composition taken as 100% by weight.
  • the molecular weight of the polymer is at least about 2,000 Daltons, and preferably from about 5,000-100,000 Daltons.
  • the cross-linking sites on the polymer preferably comprise a cross-linking group selected from the group consisting of hydroxyl, carboxylic, and amide groups.
  • the most preferred polymers include cellulose acetate hydrogen phthalate, cellulose acetate butyrate, hydroxypropyl cellulose, ethyl cellulose, polyesters, polyacrylic acid, and hydroxypropyl methacrylate.
  • the composition preferably includes an acid such as -toluenesulfonic acid.
  • a chromophore to the composition as the compound of Formula I also functions as a light-absorber.
  • the composition is preferably essentially free (i.e., less than about 0.5% by weight, preferably less than about 0.1% by weight, and more preferably about 0% by weight) of any added chromophores.
  • low molecular weight (e.g., less than about 13,000 Daltons) polymeric binders can be utilized in the dispersion (after heating and acidification steps in the case of the first embodiment) to assist in forming highly planar layers.
  • a high molecular weight polymeric binder e.g., acrylics, polyester, or cellulosic polymer such as cellulose acetate hydrogen phthalate, hydroxypropyl cellulose, and ethyl cellulose
  • a molecular weight of at least about 100,000 Daltons can be mixed with the starting dispersion (also after heating and acidification steps in the case of the first embodiment) to assist in forming conformal layers.
  • an anti-reflective layer having a percent conformality of at least about 60%, even on topographic surfaces (i.e., surfaces having raised features of 1000 ⁇ or greater and/or having contact or via holes formed therein having hole depths of from about 1000-15,000 ⁇ ).
  • percent conformality is defined as:
  • A is the centerpoint of the top surface of a target feature when the target feature is a raised feature, or the centerpoint of the bottom surface of the target feature when the target feature is a contact or via hole; and "B” is the halfway point between the edge of the target feature and the edge of the feature nearest the target feature.
  • Feature and target feature is intended to refer to raised features as well as contact or via holes.
  • anti-reflective layers formed according to the invention will absorb at least about 90%, and preferably at least about 95%, of light at wavelengths of from about 190- 260 nm.
  • the anti-reflective layers have a k value (i.e., the imaginary component of the complex index of refraction) of at least about 0.2, and preferably at least about 0.5, at the wavelength of interest.
  • the anti-reflective layers have high etch rates, particularly when melamine is utilized.
  • the etch selectivity to resist will be at least about 1.5, and preferably at least about 2.0 when CF 4 is used as the etchant.
  • Figure 1 is a graph depicting the molecular weight distribution of polymerized Cymel ® 303 as a function of reaction time
  • Fig. 2 is a graph depicting the molecular weight distribution of polymerized Cymel ® 303 having 3-hydroxy-2-naphthoic acid bonded thereto as a function of reaction time;
  • Fig. 3 is a graph depicting the change in the methylol and methoxymethylol groups over time.
  • a stripping test was performed to determine the resistance of the experimental anti-reflective coating (ARC) to photoresist solvents.
  • ARC anti-reflective coating
  • an ARC formulation was spin-coated onto a silicon wafer at a spin speed of 2,500 rpm for 60 seconds and at an acceleration of 20,000 rpm/second.
  • the film was baked on a hotplate at 205 °C for 60 seconds.
  • the ARC film thickness was then measured at multiple points on the wafer using ellipsometry.
  • Ethyl lactate was puddled onto the silicon wafer for 10 seconds, followed by spin drying at 3,500 rpm for 30 seconds to remove the solvent. The film was then baked on a hotplate at 100°C for 30 seconds. The ARC film thickness was again measured at multiple points on the wafer using ellipsometry. The amount of stripping W as determined to be the difference between the initial and final average film thicknesses, with the uncertainty in the stripping measurement being the sum of the two average thickness measurement uncertainties.
  • the degree of intermixing between the sample ARC and the photoresist was determined.
  • an ARC formulation was spin- coated onto a silicon wafer at a spin speed of 2,500 rpm for 60 seconds and at an acceleration of 20,000 rpm/second.
  • the film was baked on a hotplate at 205 °C for 60 0 seconds.
  • the ARC film thickness was then measured at multiple points on the wafer using ellipsometry.
  • a photoresist (UN6, available from Shipley) was spin-coated on top of the ARC film at a spin speed of 3250 rpm for 30 seconds and at an acceleration of 20,000 rpm/second under ambient conditions. The wafer was then baked on a hotplate for ⁇ 1 0°C for 60 seconds and exposed to 20 mJ of exposure energy, after which a post- exposure bake was performed on the wafer at 130°C for 90 seconds.
  • the photoresist was developed with Shipley LDD26W developer for 40 seconds. The sample was then rinsed with distilled water and spun dry at 2,000 rpm for
  • 2Q thickness was again measured at multiple points on the wafer using ellipsometry.
  • the difference in the two film thickness averages (A) was recorded as the interlayer stripping result with the uncertainty in the interlayer measurement being the sum of the two average thickness measurement uncertainties.
  • a 10% ⁇ a 2 SO 3 (aq) solution was prepared by mixing 50 g of Na 2 SO 3 with 450 g of water. A few drops of rosolic acid was added to this solution until it turned red after which IN HCl (aq) was added to the solution until it turned to a color o between pale pink and colorless. The shelf life of the resulting solution is 2-3 days.
  • the sample to be tested was prepared by mixing 1.5 g of the sample with 10 ml of 1 ,4-dioxane. Next, 20 g of the previously prepared 10% Na 2 SO 3 solution was added to the flask and the flask was agitated with a magnetic stirrer. While stirring, IN HCl
  • A is the amount (in ml) titrated for a blank (i.e., 1,4-dioxane only)
  • B is the amount (in ml) of titrated 0.
  • X is the total free formaldehyde weight determined as described in part (a) above.
  • % -CH 2 OCH 3 (B-A)*0.1 *(1.502/weight of sample in g)-X,
  • A is the amount (in ml) titrated for a blank (i.e., 1,4-dioxane only)
  • B is the amount (in ml) of titrated 0.
  • X is the total free formaldehyde weight determined as described in part (a) above.
  • Cymel ® 303 (40.0 g, available from Cytec Industries, Inc., New Jersey) was dissolved in 180.0 g of ethyl lactate in a 500 ml round-bottomed flask. In a 50 ml beaker, 1.0 g ofp-toluenesulfonic acid (pTSA) was dissolved in 20 g of ethyl lactate.
  • pTSA p-toluenesulfonic acid
  • ⁇ _ The round-bottomed flask was fitted with a nitrogen source, a water condenser, and a thermometer, and the contents of the flask heated to 120° C in an oil bath.
  • the pTSA solution was added to the beaker via an addition funnel.
  • the resulting solution was maintained at a temperature of 120°F for 12 hours. During this 12-hour time period, 50 g aliquots of the solution were collected at 0 hours, 4 hours, 6 hours, 8 hours, and
  • Silicon wafers were spin-coated with each of the above formulations at 2500 rpm for 60 seconds followed by drying and baking at 205 °C for 60 seconds. The film thickness was measured, and the optical parameters of the film were determined. This data is reported in Table 1.
  • Cymel ® 303 (40.0 g) and 8.0 g of 3-hydroxy 2-naphthoic acid were dissolved in 180.0 g of ethyl lactate in a 500 ml round-bottomed flask.
  • 1.0 g of pTSA was dissolved in 20 g of ethyl lactate.
  • the round-bottomed flask was fitted with a nitrogen source, a water condenser, and a thermometer, and the contents of the 5 flask heated to 120° C in an oil bath.
  • the pTSA solution was added to the beaker via an addition funnel.
  • the resulting solution was maintained at a temperature of 120°F for 12 hours.
  • Silicon wafers were spin-coated with each of the above formulations at 2500 rpm for 60 seconds followed by drying and baking at 205 °C for 60 seconds. The film thickness was measured, and the optical parameters of the film were determined. This data is reported in Table 2.
  • the etch selectivity to resist (DUN42) with CF 4 as the 0 etchant was 1.40. Table 2
  • Cymel ® 303 and Cymel ® 1123 were dissolved along with 0.75 g of pTSA were dissolved in 150.0 g of ethyl lactate in a 500 ml round- bottomed flask.
  • the flask was fitted with a nitrogen source, a water condenser, and a thermometer after which the flask contents were heated to 120°C in an oil bath and maintained at this temperature for 12 hours.
  • the sample was filtered through a 0.1 micron filter.
  • An anti-reflective coating was formulated by adding PGME, p- toluenesulfonate or pyridine, and pyridinium tosylate (pPTS) to the prepared sample in the amounts indicated in Table 3.
  • EXAMPLE 4 Cellulose acetate hydrogen phthalate (3.0 g and having an average molecular weight of about 100,000 Daltons) was dissolved in 130.5 g of PGME. Next, 11.5 g of Cymel ® 1125, 5.0 g of Cymel ® 303, 150 g of propylene glycol monomethyl ether acetate (PGMEA), and 1.15 g of pTSA was added to the prepared solution and allowed to dissolve completely. The resulting solution was then filtered through a 0.1 micron. The prepared formulation was spin-coated on silicon wafers at 2500 rpm for 60 seconds followed by drying and baking at 205 °C for 60 seconds. The film thickness was measured, and the optical properties determined. This data is reported in Table 5. The percent conformality of the film was determined to be 60%.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
PCT/US2000/024595 2000-03-09 2000-09-06 Improved anti-reflective coating compositions comprising polymerized aminoplasts Ceased WO2001081010A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020027013840A KR100912975B1 (ko) 2000-03-09 2000-09-06 중합 아미노플라스트를 함유하는 개선된 반사 방지액 조성물
EP00961646A EP1284829A4 (en) 2000-04-19 2000-09-06 IMPROVED ANTI-REFLECTIVE COATING COMPOSITIONS COMPRISING POLYMERIZED AMINOPLASTS
JP2001578095A JP4886146B2 (ja) 2000-04-19 2000-09-06 アミノプラスト重合物を含む改良された反射防止コーティング組成物
AU2000273568A AU2000273568A1 (en) 2000-04-19 2000-09-06 Improved anti-reflective coating compositions comprising polymerized aminoplasts

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/552,236 2000-04-19
US09/552,236 US6323310B1 (en) 2000-04-19 2000-04-19 Anti-reflective coating compositions comprising polymerized aminoplasts

Publications (1)

Publication Number Publication Date
WO2001081010A1 true WO2001081010A1 (en) 2001-11-01

Family

ID=24204467

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/024595 Ceased WO2001081010A1 (en) 2000-03-09 2000-09-06 Improved anti-reflective coating compositions comprising polymerized aminoplasts

Country Status (8)

Country Link
US (7) US6323310B1 (https=)
EP (1) EP1284829A4 (https=)
JP (1) JP4886146B2 (https=)
CN (1) CN1248787C (https=)
AU (1) AU2000273568A1 (https=)
MY (1) MY133726A (https=)
TW (1) TWI247968B (https=)
WO (1) WO2001081010A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8361695B2 (en) 2007-12-13 2013-01-29 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition and method for forming resist pattern

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
JP4117871B2 (ja) * 2000-11-09 2008-07-16 東京応化工業株式会社 反射防止膜形成用組成物
TW576859B (en) 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
US6893684B2 (en) * 2001-06-05 2005-05-17 Brewer Science Inc. Anti-reflective coating compositions for use with low k dielectric materials
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US20030215736A1 (en) * 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
EP1560070B1 (en) * 2002-10-09 2009-12-30 Nissan Chemical Industries, Ltd. Composition for forming antireflection film for lithography
US7038328B2 (en) * 2002-10-15 2006-05-02 Brewer Science Inc. Anti-reflective compositions comprising triazine compounds
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
EP1422565A3 (en) * 2002-11-20 2005-01-05 Shipley Company LLC Multilayer photoresist systems
US7018779B2 (en) * 2003-01-07 2006-03-28 International Business Machines Corporation Apparatus and method to improve resist line roughness in semiconductor wafer processing
US7291293B2 (en) * 2003-02-28 2007-11-06 Northwestern University Vapor deposited electro-optic films self-assembled through hydrogen bonding
US8461234B2 (en) * 2003-03-14 2013-06-11 Eastman Chemical Company Refinish coating compositions comprising low molecular weight cellulose mixed esters
US8039531B2 (en) * 2003-03-14 2011-10-18 Eastman Chemical Company Low molecular weight cellulose mixed esters and their use as low viscosity binders and modifiers in coating compositions
US7893138B2 (en) * 2003-03-14 2011-02-22 Eastman Chemical Company Low molecular weight carboxyalkylcellulose esters and their use as low viscosity binders and modifiers in coating compositions
US8124676B2 (en) * 2003-03-14 2012-02-28 Eastman Chemical Company Basecoat coating compositions comprising low molecular weight cellulose mixed esters
US20050074688A1 (en) * 2003-10-03 2005-04-07 Toukhy Medhat A. Bottom antireflective coatings
US7795369B2 (en) * 2004-10-12 2010-09-14 Nissan Chemical Industries, Ltd. Sulfur atom-containing anti-reflective coating forming composition for lithography
KR101248826B1 (ko) * 2004-11-01 2013-03-29 닛산 가가쿠 고교 가부시키 가이샤 시클로덱스트린 화합물을 함유하는 리소그라피용 하층막 형성 조성물
US8137895B2 (en) * 2005-08-09 2012-03-20 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for improving photoresist pattern adhesion
US20080085953A1 (en) * 2006-06-05 2008-04-10 Deepanjan Bhattacharya Coating compositions comprising low molecular weight cellulose mixed esters and their use to improve anti-sag, leveling, and 20 degree gloss
US20070282038A1 (en) * 2006-06-05 2007-12-06 Deepanjan Bhattacharya Methods for improving the anti-sag, leveling, and gloss of coating compositions comprising low molecular weight cellulose mixed esters
WO2008026468A1 (fr) * 2006-08-28 2008-03-06 Nissan Chemical Industries, Ltd. Composition servant à créer une sous-couche de réserve et contenant un additif liquide
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
CN102203951A (zh) 2008-10-31 2011-09-28 日产化学工业株式会社 形成光电转换装置用波长转换膜的组合物、光电转换装置用波长转换膜以及光电转换装置
WO2010150748A1 (ja) 2009-06-23 2010-12-29 日産化学工業株式会社 光配向性を有する熱硬化膜形成組成物
CN102471629B (zh) * 2009-07-21 2015-09-09 日产化学工业株式会社 形成具有光取向性的热固化膜的组合物
US8507192B2 (en) * 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
EP2557119B1 (en) 2010-04-08 2015-12-09 Nissan Chemical Industries, Ltd. Composition forming heat-cured film having photo-alignment properties
CN103261273B (zh) * 2010-11-01 2015-09-16 日产化学工业株式会社 含三嗪环的聚合物和含有该聚合物的成膜用组合物
EP2753662B1 (en) 2011-09-07 2020-06-24 MicroChem Corp. Epoxy formulations and processes for fabrication of relief patterns on low surface energy substrates
US9244199B2 (en) 2011-10-11 2016-01-26 Nissan Chemical Industries, Ltd. Cured film formation composition, orientation material, and retardation material
US9962430B2 (en) 2012-02-15 2018-05-08 Chirhoclin, Inc. Methods for treating pain associated with chronic pancreatitis
US11635688B2 (en) 2012-03-08 2023-04-25 Kayaku Advanced Materials, Inc. Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates
US11406718B2 (en) 2012-05-29 2022-08-09 Chirhoclin, Inc. Methods of detecting pancreobiliary ductal leaks
KR102641678B1 (ko) * 2016-02-09 2024-02-28 닛산 가가쿠 가부시키가이샤 트라이아진환 함유 중합체 및 그것을 포함하는 조성물
US11744878B2 (en) 2020-08-19 2023-09-05 Chirhoclin, Inc. Methods for treatment of COVID-19 syndrome

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997007145A1 (en) * 1995-08-21 1997-02-27 Flaim Tony D Thermosetting anti-reflective coatings and method for making same
WO1999017161A1 (en) * 1997-09-30 1999-04-08 Brewer Science, Inc. Improved thermosetting anti-reflective coatings at deep ultraviolet
WO1999056178A1 (en) * 1998-04-29 1999-11-04 Brewer Science, Inc. Fast-etching, thermosetting anti-reflective coatings derived from cellulosic binders

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4197392A (en) * 1978-08-21 1980-04-08 General Electric Company Melamine coatings
CA1264880A (en) 1984-07-06 1990-01-23 John Brooke Gardiner Viscosity index improver - dispersant additive useful in oil compositions
JPH0713127B2 (ja) * 1986-01-22 1995-02-15 大日精化工業株式会社 紫外線反射材料
US5094765A (en) 1990-04-30 1992-03-10 Texaco Inc. Lubricating oil composition
US5536835A (en) * 1993-11-26 1996-07-16 Ppg Industries, Inc. Etherified alkyl or arylcarbamylmethylated aminotriazines and curable compositions containing the same
US5731385A (en) * 1993-12-16 1998-03-24 International Business Machines Corporation Polymeric dyes for antireflective coatings
JP2953562B2 (ja) * 1994-07-18 1999-09-27 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いた多層レジスト材料
JP3436843B2 (ja) 1996-04-25 2003-08-18 東京応化工業株式会社 リソグラフィー用下地材及びそれを用いたリソグラフィー用レジスト材料
TW406215B (en) * 1996-08-07 2000-09-21 Fuji Photo Film Co Ltd Composition for anti-reflective coating material in lithographic process, and process for forming resist pattern
JPH1090908A (ja) * 1996-09-17 1998-04-10 Fuji Photo Film Co Ltd 反射防止膜材料用組成物
JPH10120940A (ja) * 1996-10-18 1998-05-12 Fuji Photo Film Co Ltd 反射防止膜用組成物
JP3506357B2 (ja) * 1996-12-13 2004-03-15 東京応化工業株式会社 リソグラフィー用下地材
US5948847A (en) * 1996-12-13 1999-09-07 Tokyo Ohka Kogyo Co., Ltd. Undercoating composition for photolithographic patterning
JP3851414B2 (ja) * 1997-06-04 2006-11-29 富士写真フイルム株式会社 反射防止膜材料組成物及びこれを用いたレジストパターン形成方法
JPH1165125A (ja) 1997-08-21 1999-03-05 Tokyo Ohka Kogyo Co Ltd パターン形成方法
US6156479A (en) * 1997-09-30 2000-12-05 Brewer Science, Inc. Thermosetting anti-refective coatings
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
TW476865B (en) 1999-01-28 2002-02-21 Tokyo Ohka Kogyo Co Ltd Undercoating composition for photolithographic resist
JP3456937B2 (ja) * 1999-01-28 2003-10-14 東京応化工業株式会社 リソグラフィー用下地材組成物
JP4117871B2 (ja) * 2000-11-09 2008-07-16 東京応化工業株式会社 反射防止膜形成用組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997007145A1 (en) * 1995-08-21 1997-02-27 Flaim Tony D Thermosetting anti-reflective coatings and method for making same
WO1999017161A1 (en) * 1997-09-30 1999-04-08 Brewer Science, Inc. Improved thermosetting anti-reflective coatings at deep ultraviolet
WO1999056178A1 (en) * 1998-04-29 1999-11-04 Brewer Science, Inc. Fast-etching, thermosetting anti-reflective coatings derived from cellulosic binders

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1284829A4 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8361695B2 (en) 2007-12-13 2013-01-29 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition and method for forming resist pattern

Also Published As

Publication number Publication date
US20020007038A1 (en) 2002-01-17
AU2000273568A1 (en) 2001-11-07
US6403152B1 (en) 2002-06-11
TWI247968B (en) 2006-01-21
CN1452521A (zh) 2003-10-29
US20020061408A1 (en) 2002-05-23
MY133726A (en) 2007-11-30
US6399686B1 (en) 2002-06-04
JP2003531252A (ja) 2003-10-21
JP4886146B2 (ja) 2012-02-29
US20020161175A1 (en) 2002-10-31
CN1248787C (zh) 2006-04-05
US6524708B2 (en) 2003-02-25
EP1284829A1 (en) 2003-02-26
US6323310B1 (en) 2001-11-27
EP1284829A4 (en) 2003-07-02
US6512084B2 (en) 2003-01-28
US6432611B1 (en) 2002-08-13

Similar Documents

Publication Publication Date Title
US6323310B1 (en) Anti-reflective coating compositions comprising polymerized aminoplasts
US6653411B2 (en) Anti-reflective coating compositions comprising polymerized aminoplasts
EP1573785B1 (en) Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
US20040229158A1 (en) Thermally curable middle layer for 193-NM trilayer resist process
US20060057501A1 (en) Antireflective compositions for photoresists
EP2000852B1 (en) Halogenated anti-reflective coatings
WO2002071155A1 (en) Thermosetting anti-reflective coatings comprising aryl urethanes of hydroxypropyl cellulose
KR20000068028A (ko) 광흡수성 중합체, 광흡수막 형성용 조성물, 광흡수막 및 이를
US6495305B1 (en) Halogenated anti-reflective coatings
TWI509037B (zh) 抗反射塗料組合物及其方法
EP3497520B1 (en) Bottom antireflective coating forming composition
US7754818B2 (en) Gap fill materials and bottom anti-reflective coatings comprising hyperbranched polymers
KR100912975B1 (ko) 중합 아미노플라스트를 함유하는 개선된 반사 방지액 조성물
JP2007114245A (ja) 付加重合性樹脂を含むリソグラフィー用反射防止膜形成組成物

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 1020027013840

Country of ref document: KR

ENP Entry into the national phase

Ref country code: JP

Ref document number: 2001 578095

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 008194416

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2000961646

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020027013840

Country of ref document: KR

WWP Wipo information: published in national office

Ref document number: 2000961646

Country of ref document: EP