WO2001045795A1 - Epilateur laser - Google Patents

Epilateur laser Download PDF

Info

Publication number
WO2001045795A1
WO2001045795A1 PCT/JP2000/009103 JP0009103W WO0145795A1 WO 2001045795 A1 WO2001045795 A1 WO 2001045795A1 JP 0009103 W JP0009103 W JP 0009103W WO 0145795 A1 WO0145795 A1 WO 0145795A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
skin
semiconductor laser
light
incident end
Prior art date
Application number
PCT/JP2000/009103
Other languages
English (en)
Japanese (ja)
Inventor
Iwao Yamazaki
Yoshihiro Izawa
Original Assignee
Yaman Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yaman Ltd. filed Critical Yaman Ltd.
Priority to AU24001/01A priority Critical patent/AU2400101A/en
Publication of WO2001045795A1 publication Critical patent/WO2001045795A1/fr

Links

Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
    • A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
    • A61B18/203—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser applying laser energy to the outside of the body
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B2018/00315—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body for treatment of particular body parts
    • A61B2018/00452—Skin
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B2018/00315—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body for treatment of particular body parts
    • A61B2018/00452—Skin
    • A61B2018/00476—Hair follicles
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
    • A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
    • A61B18/22—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser the beam being directed along or through a flexible conduit, e.g. an optical fibre; Couplings or hand-pieces therefor
    • A61B2018/2255—Optical elements at the distal end of probe tips
    • A61B2018/2261—Optical elements at the distal end of probe tips with scattering, diffusion or dispersion of light
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B90/00—Instruments, implements or accessories specially adapted for surgery or diagnosis and not covered by any of the groups A61B1/00 - A61B50/00, e.g. for luxation treatment or for protecting wound edges
    • A61B90/03—Automatic limiting or abutting means, e.g. for safety
    • A61B2090/033—Abutting means, stops, e.g. abutting on tissue or skin
    • A61B2090/036—Abutting means, stops, e.g. abutting on tissue or skin abutting on tissue or skin
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/065—Light sources therefor
    • A61N2005/0651—Diodes
    • A61N2005/0652—Arrays of diodes

Definitions

  • the present invention irradiates the skin with laser light from a semiconductor laser diode to cause protein degeneration in the dermal papilla and the sebaceous glands, suppresses the growth of hair in that part, and reduces the hair loss treatment. Do with laser epilator. Background art
  • the semiconductor laser used for hair removal treatment has a very small light emitting section area of several meters to several tens of meters per meter, it has high directivity like a He-Ne laser.
  • the beam does not become a narrow parallel straight beam but spreads widely at an angle of 30 ° to 45 °.
  • the light is focused by a focusing lens to concentrate the power density in a narrow range.
  • the beam near the focal point becomes as thin as 1-2 mm.
  • semiconductor diodes are arranged so that the distance between adjacent focal points is equal. Even if placed, light power is concentrated too much near the focal point, causing slight burns to the normal cells due to the photothermal reaction, and pain.
  • the present invention provides a hair removal treatment by irradiating the skin with one or two or more laser light beams to uniformly act on the skin by eliminating uneven energy density. It is designed to prevent burns and pain. Disclosure of the invention
  • the present invention is configured as follows. That is, according to the invention of claim 1, a laser transmitting portion made of a transparent dielectric material is installed at the head portion of the probe, and one of the opposed end surfaces is set as an incident end,
  • One or more laser light sources with a focusing lens arranged in front of the semiconductor laser die are provided on the surface facing the incident end, and
  • the invention according to claim 2 is the laser hair remover according to claim 1, wherein the laser light source mounting surface on which the laser light source is provided is curved in a concave curved shape.
  • the invention according to claim 3 is the laser epilator according to claim 1, wherein the laser transmitting portion is installed so as to be exchangeable.
  • the invention according to claim 4 is the laser epilator according to claim 1, wherein the laser transmitting portion is provided with cooling means.
  • FIG. 1 is a front view of a laser hair remover embodying the present invention.
  • FIG. 2 is a side view showing a main part of FIG. 1 in cross section.
  • FIG. 3 is an explanatory diagram showing a light propagation path in a laser transmitting section.
  • FIG. 1 and 2 show a laser hair remover embodying the present invention.
  • the laser epilator has a built-in control circuit and a power supply (not shown) that control the irradiation time ratio of pulsed laser light by a timer, and has a head section 1 on the front and a head section.
  • An LED lamp 2 and a push switch 3 are provided below the unit 1.
  • the laser light source mounting surface 4 in the head portion 1 is curved in a concave curved shape, and through holes are arranged concentrically from the center thereof, and a focusing lens 12 is fitted into these through holes. Put in.
  • the light diffusion rod 11 is made of a transparent dielectric material such as quartz glass or plastic and formed in a cylindrical shape. Then, of the opposing end surfaces, the side exposed from the head portion 1 and in contact with the skin is defined as an emission end a, and the side attached to the head portion 1 is defined as an incidence end b. By locating the incident end b at the center of the curved surface of the laser light source mounting surface 4, the distance between the incident end b and the spherical lens 12 can be made equal and close.
  • the light diffusion rod 11 also serves as a stirrer. By bringing the emission end a into contact with the skin, the light diffusion rod 11 can be disposed between the spherical lens 12 and the skin surface. It works to keep the distance constant.
  • Air can be blown onto the skin from the head surface or the Peltier element can be removed.
  • the light diffusion rod 11 is cooled down, the effect of cooling the skin and relieving pain can be expected.
  • a cylindrical heat sink 13 is attached to the back side of the spherical lens 12, and a metal package of the semiconductor laser diode 14 is inserted into the base of the heat sink 13 and fixed.
  • the optical axis of the semiconductor laser diode 14 coincides with the axis of the heat sink 13. If the heat sink 13 is mounted perpendicular to the back of the laser light source mounting surface 4, the optical axis will naturally converge at the incident end b.
  • the laser beam of the semiconductor laser diode 14 passes through the spherical lens 12 and is focused, and is focused on the incident end b of the light diffusion rod 11.
  • the focal point of all the semiconductor laser diodes 14 is formed at the incident end b, and the laser light is transmitted through the light diffusing port 11 and emitted from the emitting end a.
  • the number of the semiconductor laser diodes 14 arranged in the head section 1 may be one instead of a plurality.
  • the spherical lens 12 converges the laser beam from the semiconductor laser diode 14 to form a beam waist at the front focal point.
  • the focal length is shorter than that of a normal lens, the focal depth is small.
  • Optical power can be narrowed down to a narrow range.
  • the position of the focal point does not need to be exactly at the incident end b of the light diffusion rod 11, but may be formed approximately near the incident end b.
  • the heat sink 13 diffuses heat generated during operation of the semiconductor laser diode 14 by heat conduction, thereby suppressing a decrease in output due to heat inevitable in the semiconductor laser diode.
  • the heat sink 13 is preferably made of aluminum or an alloy thereof having high heat conduction efficiency, and is provided with several dummy through holes to enhance the heat radiation efficiency.
  • the semiconductor laser diode 14 is GaAs (gallium arsenide). Laser oscillation occurs when a current is directly applied to a PN junction diode using a compound semiconductor such as a semiconductor to excite it. This laser beam has a peak wavelength of 600 to 160 nm, an optical output of 5 mW to 3 W, and has good thermal efficiency. It has the property of causing a sufficient photothermal reaction to the skin.
  • GaAs gallium arsenide
  • photoelectric reactions in addition to thermal reactions, there are photoelectric reactions, magneto-optical reactions, photodynamic reactions, photochemical reactions, photoimmune reactions, photoenzymatic reactions, and the like. It promotes metabolism and enhances skin blood circulation, and has excellent skin penetration because it is hardly absorbed by water and blood.
  • the push switch 3 operates one switch to turn on / off the power and set the irradiation time.
  • the laser light repeatedly turns on and off in a pulsed manner.
  • the lighting time is variable and the pause time is fixed (for example, 1 second).
  • the lighting time is controlled by a timer to adjust the laser light irradiation time ratio during the entire energization period.
  • Pressing switch 3 first turns on the power and sets the irradiation time to 1 second. At this time, LED lamp 2 lights green. At this time, the semiconductor laser die repeats a cycle of lighting for 1 second and pausing for 1 second.
  • the irradiation time of 2 seconds is set, and then the LED lamp 2 blinks green.
  • the semiconductor laser diode repeats a cycle of turning on for 2 seconds and pausing for 1 second.
  • the irradiation time should be set to a very short count of 1 to 6 seconds in this way so as not to cause transient damage to the skin.
  • the laser hair remover of the present invention has the above-described configuration. When performing trimming, first, the push switch 3 is pressed to turn on the power.
  • the semiconductor laser diode 14 lights up for a predetermined time and then pauses for 1 second. Thereafter, the lighting and the pause are repeated.
  • the desired time is set in the range of 1 to 6 seconds while pressing the push switch 3 as described above.
  • the semiconductor laser diode 14 While the semiconductor laser diode 14 is on, the emission end a of the light diffusion rod 11 is pressed against the skin surface to be trimmed, and the laser beam is irradiated.
  • the semiconductor laser diode 14 When the semiconductor laser diode 14 is turned on, as shown in FIG. 3, the laser beam condensed by the spherical lens 12 is incident on the incident end b of the light diffusion rod 11. Some laser light travels straight along the axis of the light diffusion rod 11, but most of the rest propagates along the dielectric path while being totally reflected by the inner peripheral surface of the light diffusion rod 11, Radiates from the exit end a of the diffusion pad 11.
  • the path of the laser light propagating through the light diffusion rod 11 is diverse, and at the emission end a, the laser light is diffused almost evenly over the entire area. For this reason, the energy density of the laser beam at the emission end a is uneven ⁇ averaging in place, and since the energy density is high, it acts on the skin in contact with the emission end a at a depth ⁇ uniform.
  • the light diffusion rod 11 is replaceable.Use a small diameter when irradiating laser light to a narrow area with high density, and use a large diameter when irradiating laser light to a wide area with low density. Replace with Industrial applicability
  • the laser epilator of the present invention is provided at the head of the probe.
  • a large number of semiconductor laser die laser beams are radiated through the laser transmission part made of a transparent dielectric.
  • the optical power of the laser beam is diffused in the laser transmitting portion and the energy density is made uniform, the light beam is concentrated on a plurality of focal points as in the related art, and the skin is burned. The pain will not be felt.
  • the laser transmission part is brought into contact with the skin for treatment, the operation is easy and the irradiated part can be easily identified.
  • the laser transmitting portion keeps the distance between the laser light source and the skin constant, the safety is enhanced, and the laser transmitting portion also has an effect of cooling the skin and relieving pain.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Surgery (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Molecular Biology (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Electromagnetism (AREA)
  • Biomedical Technology (AREA)
  • Heart & Thoracic Surgery (AREA)
  • Medical Informatics (AREA)
  • Otolaryngology (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Radiation-Therapy Devices (AREA)
  • Surgical Instruments (AREA)

Abstract

Traitement d'épilation qui consiste à irradier la peau avec un grand nombre de faisceaux laser sans brûler ni blesser la peau. Une baguette (11) diffusant la lumière réalisée dans un matériau diélectrique transparent tel que du verre de silice ou du plastique est disposée à l'avant de chaque diode laser à semi-conducteurs. Les faisceaux laser provenant des diodes laser à semi-conducteurs sont transmis par les baguettes (11) diffusant la lumière et appliqués sur la peau. Lorsque les faisceaux laser sont transmis par les baguettes (11) diffusant la lumière, chaque faisceau est réfléchi par la surface périphérique interne de la baguette. De cette manière, la puissance des faisceaux lasers est dispersée et moyennée au niveau des extrémités (a) de sortie situées sur le côté sortie, ce qui a pour effet de stimuler moins fortement la peau. Les baguettes (11) diffusant la lumière font également office d'éléments d'espacement pour maintenir la distance entre chaque diode laser à semi-conducteurs et la peau, de manière à éviter l'irradiation insuffisante provoquée par des distances trop courtes ou trop importantes entre les sources laser et la peau.
PCT/JP2000/009103 1999-12-21 2000-12-21 Epilateur laser WO2001045795A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU24001/01A AU2400101A (en) 1999-12-21 2000-12-21 Laser hair-remover

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11/363290 1999-12-21
JP36329099A JP2004159666A (ja) 1999-12-21 1999-12-21 レーザ脱毛器

Publications (1)

Publication Number Publication Date
WO2001045795A1 true WO2001045795A1 (fr) 2001-06-28

Family

ID=18478967

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/009103 WO2001045795A1 (fr) 1999-12-21 2000-12-21 Epilateur laser

Country Status (3)

Country Link
JP (1) JP2004159666A (fr)
AU (1) AU2400101A (fr)
WO (1) WO2001045795A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002051327A1 (fr) * 2000-12-22 2002-07-04 Icn Photonics Limited Systeme d'application d'energie lumineuse pour ameliorer l'aspect de la peau
US6645230B2 (en) 2000-03-23 2003-11-11 Photo Therapeutics Ltd. Therapeutic light source and method
AU2003240301B2 (en) * 2002-06-25 2008-02-14 Acrux Dds Pty Ltd Transdermal delivery rate control using amorphous pharmaceutical compositions
EP2550925A1 (fr) 2011-07-28 2013-01-30 Eduardo Antonio Gomez de Diego Appareil d'épilation laser portable polyvalent
CN111298303A (zh) * 2020-03-09 2020-06-19 成都石墨烯应用产业技术研究院有限公司 石墨烯理疗组件及其应用

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US9132031B2 (en) 2006-09-26 2015-09-15 Zeltiq Aesthetics, Inc. Cooling device having a plurality of controllable cooling elements to provide a predetermined cooling profile
US8192474B2 (en) 2006-09-26 2012-06-05 Zeltiq Aesthetics, Inc. Tissue treatment methods
US20080077201A1 (en) 2006-09-26 2008-03-27 Juniper Medical, Inc. Cooling devices with flexible sensors
US20080287839A1 (en) 2007-05-18 2008-11-20 Juniper Medical, Inc. Method of enhanced removal of heat from subcutaneous lipid-rich cells and treatment apparatus having an actuator
US8523927B2 (en) 2007-07-13 2013-09-03 Zeltiq Aesthetics, Inc. System for treating lipid-rich regions
JP5474791B2 (ja) 2007-08-21 2014-04-16 ゼルティック エステティックス インコーポレイテッド 脂肪組織の冷却のような皮下脂質リッチ細胞の冷却の監視
JP2011509732A (ja) * 2008-01-17 2011-03-31 シネロン メディカル リミテッド 個人的使用のための体毛除去装置及びその使用方法
US8603073B2 (en) 2008-12-17 2013-12-10 Zeltiq Aesthetics, Inc. Systems and methods with interrupt/resume capabilities for treating subcutaneous lipid-rich cells
JP5519000B2 (ja) 2009-04-30 2014-06-11 ゼルティック エステティックス インコーポレイテッド 脂肪が豊富な皮下細胞から熱を除去するためのデバイス、システム、及び方法
CN102791227A (zh) 2010-01-25 2012-11-21 斯尔替克美学股份有限公司 用于通过相变冷却剂从皮下富脂细胞无创去除热量的家用施用器以及相关的装置、系统和方法
US8676338B2 (en) 2010-07-20 2014-03-18 Zeltiq Aesthetics, Inc. Combined modality treatment systems, methods and apparatus for body contouring applications
WO2012103242A1 (fr) 2011-01-25 2012-08-02 Zeltiq Aesthetics, Inc. Dispositifs, systèmes d'application et procédés avec zones de flux thermique localisées permettant de retirer la chaleur de cellules sous-cutanées riches en lipides
US9545523B2 (en) 2013-03-14 2017-01-17 Zeltiq Aesthetics, Inc. Multi-modality treatment systems, methods and apparatus for altering subcutaneous lipid-rich tissue
US9844460B2 (en) 2013-03-14 2017-12-19 Zeltiq Aesthetics, Inc. Treatment systems with fluid mixing systems and fluid-cooled applicators and methods of using the same
CN105848515A (zh) * 2013-12-27 2016-08-10 雅萌股份有限公司 美容器
WO2015117032A1 (fr) 2014-01-31 2015-08-06 Zeltiq Aesthestic, Inc. Systèmes de traitement permettant le traitement des glandes par refroidissement
US10675176B1 (en) 2014-03-19 2020-06-09 Zeltiq Aesthetics, Inc. Treatment systems, devices, and methods for cooling targeted tissue
USD777338S1 (en) 2014-03-20 2017-01-24 Zeltiq Aesthetics, Inc. Cryotherapy applicator for cooling tissue
US10952891B1 (en) 2014-05-13 2021-03-23 Zeltiq Aesthetics, Inc. Treatment systems with adjustable gap applicators and methods for cooling tissue
US10935174B2 (en) 2014-08-19 2021-03-02 Zeltiq Aesthetics, Inc. Stress relief couplings for cryotherapy apparatuses
US10568759B2 (en) 2014-08-19 2020-02-25 Zeltiq Aesthetics, Inc. Treatment systems, small volume applicators, and methods for treating submental tissue
US20160089550A1 (en) * 2014-09-25 2016-03-31 Zeltiq Aesthetics, Inc. Treatment systems, methods, and apparatuses for altering the appearance of skin
WO2017070112A1 (fr) 2015-10-19 2017-04-27 Zeltiq Aesthetics, Inc. Systèmes de traitement vasculaire, dispositifs de refroidissement et procédés pour refroidir des structures vasculaires
US10524956B2 (en) 2016-01-07 2020-01-07 Zeltiq Aesthetics, Inc. Temperature-dependent adhesion between applicator and skin during cooling of tissue
US10765552B2 (en) 2016-02-18 2020-09-08 Zeltiq Aesthetics, Inc. Cooling cup applicators with contoured heads and liner assemblies
US11382790B2 (en) 2016-05-10 2022-07-12 Zeltiq Aesthetics, Inc. Skin freezing systems for treating acne and skin conditions
US10682297B2 (en) 2016-05-10 2020-06-16 Zeltiq Aesthetics, Inc. Liposomes, emulsions, and methods for cryotherapy
US10555831B2 (en) 2016-05-10 2020-02-11 Zeltiq Aesthetics, Inc. Hydrogel substances and methods of cryotherapy
US11076879B2 (en) 2017-04-26 2021-08-03 Zeltiq Aesthetics, Inc. Shallow surface cryotherapy applicators and related technology
AU2019315940A1 (en) 2018-07-31 2021-03-04 Zeltiq Aesthetics, Inc. Methods, devices, and systems for improving skin characteristics
CA3157967A1 (fr) * 2019-08-09 2021-02-18 Dejin DUAN Dispositif d'epilation portable
CN112533554B (zh) * 2020-04-02 2023-09-22 深圳市予一电子科技有限公司 一种脱毛仪以及半导体制冷片

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63200750A (ja) * 1987-02-16 1988-08-19 株式会社モリタ製作所 特殊レ−ザメスチツプ
JPH0415050A (ja) * 1990-05-09 1992-01-20 Olympus Optical Co Ltd レーザプローブ
JPH0467860A (ja) * 1990-07-09 1992-03-03 Ya Man Ltd 局所照射のできる光脱毛用の光照射プローブ
JPH05345039A (ja) * 1992-06-16 1993-12-27 Matsushita Electric Ind Co Ltd レーザプローブ
JPH11332879A (ja) * 1998-05-29 1999-12-07 Ya Man Ltd レーザ脱毛装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63200750A (ja) * 1987-02-16 1988-08-19 株式会社モリタ製作所 特殊レ−ザメスチツプ
JPH0415050A (ja) * 1990-05-09 1992-01-20 Olympus Optical Co Ltd レーザプローブ
JPH0467860A (ja) * 1990-07-09 1992-03-03 Ya Man Ltd 局所照射のできる光脱毛用の光照射プローブ
JPH05345039A (ja) * 1992-06-16 1993-12-27 Matsushita Electric Ind Co Ltd レーザプローブ
JPH11332879A (ja) * 1998-05-29 1999-12-07 Ya Man Ltd レーザ脱毛装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6645230B2 (en) 2000-03-23 2003-11-11 Photo Therapeutics Ltd. Therapeutic light source and method
WO2002051327A1 (fr) * 2000-12-22 2002-07-04 Icn Photonics Limited Systeme d'application d'energie lumineuse pour ameliorer l'aspect de la peau
AU2003240301B2 (en) * 2002-06-25 2008-02-14 Acrux Dds Pty Ltd Transdermal delivery rate control using amorphous pharmaceutical compositions
EP2550925A1 (fr) 2011-07-28 2013-01-30 Eduardo Antonio Gomez de Diego Appareil d'épilation laser portable polyvalent
CN111298303A (zh) * 2020-03-09 2020-06-19 成都石墨烯应用产业技术研究院有限公司 石墨烯理疗组件及其应用

Also Published As

Publication number Publication date
AU2400101A (en) 2001-07-03
JP2004159666A (ja) 2004-06-10

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