WO2001045795A1 - Laser hair-remover - Google Patents

Laser hair-remover Download PDF

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Publication number
WO2001045795A1
WO2001045795A1 PCT/JP2000/009103 JP0009103W WO0145795A1 WO 2001045795 A1 WO2001045795 A1 WO 2001045795A1 JP 0009103 W JP0009103 W JP 0009103W WO 0145795 A1 WO0145795 A1 WO 0145795A1
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WO
WIPO (PCT)
Prior art keywords
laser
skin
semiconductor laser
light
incident end
Prior art date
Application number
PCT/JP2000/009103
Other languages
French (fr)
Japanese (ja)
Inventor
Iwao Yamazaki
Yoshihiro Izawa
Original Assignee
Yaman Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yaman Ltd. filed Critical Yaman Ltd.
Priority to AU24001/01A priority Critical patent/AU2400101A/en
Publication of WO2001045795A1 publication Critical patent/WO2001045795A1/en

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Classifications

    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
    • A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
    • A61B18/203—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser applying laser energy to the outside of the body
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B2018/00315—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body for treatment of particular body parts
    • A61B2018/00452—Skin
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B2018/00315—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body for treatment of particular body parts
    • A61B2018/00452—Skin
    • A61B2018/00476—Hair follicles
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B18/00—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body
    • A61B18/18—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves
    • A61B18/20—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser
    • A61B18/22—Surgical instruments, devices or methods for transferring non-mechanical forms of energy to or from the body by applying electromagnetic radiation, e.g. microwaves using laser the beam being directed along or through a flexible conduit, e.g. an optical fibre; Couplings or hand-pieces therefor
    • A61B2018/2255—Optical elements at the distal end of probe tips
    • A61B2018/2261—Optical elements at the distal end of probe tips with scattering, diffusion or dispersion of light
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
    • A61B90/00—Instruments, implements or accessories specially adapted for surgery or diagnosis and not covered by any of the groups A61B1/00 - A61B50/00, e.g. for luxation treatment or for protecting wound edges
    • A61B90/03—Automatic limiting or abutting means, e.g. for safety
    • A61B2090/033—Abutting means, stops, e.g. abutting on tissue or skin
    • A61B2090/036—Abutting means, stops, e.g. abutting on tissue or skin abutting on tissue or skin
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • A61N2005/065—Light sources therefor
    • A61N2005/0651—Diodes
    • A61N2005/0652—Arrays of diodes

Definitions

  • the present invention irradiates the skin with laser light from a semiconductor laser diode to cause protein degeneration in the dermal papilla and the sebaceous glands, suppresses the growth of hair in that part, and reduces the hair loss treatment. Do with laser epilator. Background art
  • the semiconductor laser used for hair removal treatment has a very small light emitting section area of several meters to several tens of meters per meter, it has high directivity like a He-Ne laser.
  • the beam does not become a narrow parallel straight beam but spreads widely at an angle of 30 ° to 45 °.
  • the light is focused by a focusing lens to concentrate the power density in a narrow range.
  • the beam near the focal point becomes as thin as 1-2 mm.
  • semiconductor diodes are arranged so that the distance between adjacent focal points is equal. Even if placed, light power is concentrated too much near the focal point, causing slight burns to the normal cells due to the photothermal reaction, and pain.
  • the present invention provides a hair removal treatment by irradiating the skin with one or two or more laser light beams to uniformly act on the skin by eliminating uneven energy density. It is designed to prevent burns and pain. Disclosure of the invention
  • the present invention is configured as follows. That is, according to the invention of claim 1, a laser transmitting portion made of a transparent dielectric material is installed at the head portion of the probe, and one of the opposed end surfaces is set as an incident end,
  • One or more laser light sources with a focusing lens arranged in front of the semiconductor laser die are provided on the surface facing the incident end, and
  • the invention according to claim 2 is the laser hair remover according to claim 1, wherein the laser light source mounting surface on which the laser light source is provided is curved in a concave curved shape.
  • the invention according to claim 3 is the laser epilator according to claim 1, wherein the laser transmitting portion is installed so as to be exchangeable.
  • the invention according to claim 4 is the laser epilator according to claim 1, wherein the laser transmitting portion is provided with cooling means.
  • FIG. 1 is a front view of a laser hair remover embodying the present invention.
  • FIG. 2 is a side view showing a main part of FIG. 1 in cross section.
  • FIG. 3 is an explanatory diagram showing a light propagation path in a laser transmitting section.
  • FIG. 1 and 2 show a laser hair remover embodying the present invention.
  • the laser epilator has a built-in control circuit and a power supply (not shown) that control the irradiation time ratio of pulsed laser light by a timer, and has a head section 1 on the front and a head section.
  • An LED lamp 2 and a push switch 3 are provided below the unit 1.
  • the laser light source mounting surface 4 in the head portion 1 is curved in a concave curved shape, and through holes are arranged concentrically from the center thereof, and a focusing lens 12 is fitted into these through holes. Put in.
  • the light diffusion rod 11 is made of a transparent dielectric material such as quartz glass or plastic and formed in a cylindrical shape. Then, of the opposing end surfaces, the side exposed from the head portion 1 and in contact with the skin is defined as an emission end a, and the side attached to the head portion 1 is defined as an incidence end b. By locating the incident end b at the center of the curved surface of the laser light source mounting surface 4, the distance between the incident end b and the spherical lens 12 can be made equal and close.
  • the light diffusion rod 11 also serves as a stirrer. By bringing the emission end a into contact with the skin, the light diffusion rod 11 can be disposed between the spherical lens 12 and the skin surface. It works to keep the distance constant.
  • Air can be blown onto the skin from the head surface or the Peltier element can be removed.
  • the light diffusion rod 11 is cooled down, the effect of cooling the skin and relieving pain can be expected.
  • a cylindrical heat sink 13 is attached to the back side of the spherical lens 12, and a metal package of the semiconductor laser diode 14 is inserted into the base of the heat sink 13 and fixed.
  • the optical axis of the semiconductor laser diode 14 coincides with the axis of the heat sink 13. If the heat sink 13 is mounted perpendicular to the back of the laser light source mounting surface 4, the optical axis will naturally converge at the incident end b.
  • the laser beam of the semiconductor laser diode 14 passes through the spherical lens 12 and is focused, and is focused on the incident end b of the light diffusion rod 11.
  • the focal point of all the semiconductor laser diodes 14 is formed at the incident end b, and the laser light is transmitted through the light diffusing port 11 and emitted from the emitting end a.
  • the number of the semiconductor laser diodes 14 arranged in the head section 1 may be one instead of a plurality.
  • the spherical lens 12 converges the laser beam from the semiconductor laser diode 14 to form a beam waist at the front focal point.
  • the focal length is shorter than that of a normal lens, the focal depth is small.
  • Optical power can be narrowed down to a narrow range.
  • the position of the focal point does not need to be exactly at the incident end b of the light diffusion rod 11, but may be formed approximately near the incident end b.
  • the heat sink 13 diffuses heat generated during operation of the semiconductor laser diode 14 by heat conduction, thereby suppressing a decrease in output due to heat inevitable in the semiconductor laser diode.
  • the heat sink 13 is preferably made of aluminum or an alloy thereof having high heat conduction efficiency, and is provided with several dummy through holes to enhance the heat radiation efficiency.
  • the semiconductor laser diode 14 is GaAs (gallium arsenide). Laser oscillation occurs when a current is directly applied to a PN junction diode using a compound semiconductor such as a semiconductor to excite it. This laser beam has a peak wavelength of 600 to 160 nm, an optical output of 5 mW to 3 W, and has good thermal efficiency. It has the property of causing a sufficient photothermal reaction to the skin.
  • GaAs gallium arsenide
  • photoelectric reactions in addition to thermal reactions, there are photoelectric reactions, magneto-optical reactions, photodynamic reactions, photochemical reactions, photoimmune reactions, photoenzymatic reactions, and the like. It promotes metabolism and enhances skin blood circulation, and has excellent skin penetration because it is hardly absorbed by water and blood.
  • the push switch 3 operates one switch to turn on / off the power and set the irradiation time.
  • the laser light repeatedly turns on and off in a pulsed manner.
  • the lighting time is variable and the pause time is fixed (for example, 1 second).
  • the lighting time is controlled by a timer to adjust the laser light irradiation time ratio during the entire energization period.
  • Pressing switch 3 first turns on the power and sets the irradiation time to 1 second. At this time, LED lamp 2 lights green. At this time, the semiconductor laser die repeats a cycle of lighting for 1 second and pausing for 1 second.
  • the irradiation time of 2 seconds is set, and then the LED lamp 2 blinks green.
  • the semiconductor laser diode repeats a cycle of turning on for 2 seconds and pausing for 1 second.
  • the irradiation time should be set to a very short count of 1 to 6 seconds in this way so as not to cause transient damage to the skin.
  • the laser hair remover of the present invention has the above-described configuration. When performing trimming, first, the push switch 3 is pressed to turn on the power.
  • the semiconductor laser diode 14 lights up for a predetermined time and then pauses for 1 second. Thereafter, the lighting and the pause are repeated.
  • the desired time is set in the range of 1 to 6 seconds while pressing the push switch 3 as described above.
  • the semiconductor laser diode 14 While the semiconductor laser diode 14 is on, the emission end a of the light diffusion rod 11 is pressed against the skin surface to be trimmed, and the laser beam is irradiated.
  • the semiconductor laser diode 14 When the semiconductor laser diode 14 is turned on, as shown in FIG. 3, the laser beam condensed by the spherical lens 12 is incident on the incident end b of the light diffusion rod 11. Some laser light travels straight along the axis of the light diffusion rod 11, but most of the rest propagates along the dielectric path while being totally reflected by the inner peripheral surface of the light diffusion rod 11, Radiates from the exit end a of the diffusion pad 11.
  • the path of the laser light propagating through the light diffusion rod 11 is diverse, and at the emission end a, the laser light is diffused almost evenly over the entire area. For this reason, the energy density of the laser beam at the emission end a is uneven ⁇ averaging in place, and since the energy density is high, it acts on the skin in contact with the emission end a at a depth ⁇ uniform.
  • the light diffusion rod 11 is replaceable.Use a small diameter when irradiating laser light to a narrow area with high density, and use a large diameter when irradiating laser light to a wide area with low density. Replace with Industrial applicability
  • the laser epilator of the present invention is provided at the head of the probe.
  • a large number of semiconductor laser die laser beams are radiated through the laser transmission part made of a transparent dielectric.
  • the optical power of the laser beam is diffused in the laser transmitting portion and the energy density is made uniform, the light beam is concentrated on a plurality of focal points as in the related art, and the skin is burned. The pain will not be felt.
  • the laser transmission part is brought into contact with the skin for treatment, the operation is easy and the irradiated part can be easily identified.
  • the laser transmitting portion keeps the distance between the laser light source and the skin constant, the safety is enhanced, and the laser transmitting portion also has an effect of cooling the skin and relieving pain.

Abstract

A hair removing treatment by irradiating the skin with a large number of laser beams without burning and hurting the skin. A light diffusing rod (11) made of a transparent dielectric such as quartz glass or plastic is disposed in front of each of semiconductor laser diodes. The laser beams from the semiconductor laser diodes are transmitted through the light diffusing rods (11) and applied to the skin. While the laser beams are transmitted through the light diffusing rods (11), each beam is reflected by the inner peripheral surface of the rod. As a result, the powers are dispersed and averaged at the output ends (a) on the output side, causing less stimulation of the skin. The light diffusing rods (11) also serve as spacers for maintaining the distance between each of the semiconductor laser diodes and the skin, so that insufficient irradiation due to too short or far distances between the laser sources and the skin is prevented.

Description

明 細 書  Specification
レ—ザ脱毛器 技術分野  Laser epilator Technical field
本発明は、 半導体レーザダイ 才ー ドのレーザ光を皮膚に照射して毛乳 頭や皮脂腺にたんばく 変性を起こ し、 その部分の毛の発育を抑制して脱 毛 ト リ ー トメ ン トを行う レ一ザ脱毛器に関する。 背景技術  The present invention irradiates the skin with laser light from a semiconductor laser diode to cause protein degeneration in the dermal papilla and the sebaceous glands, suppresses the growth of hair in that part, and reduces the hair loss treatment. Do with laser epilator. Background art
レーザ光を皮膚に照射して脱毛 ト リ ー トメ ン ト を行う場合、 わきの下 などのムダ毛の生えている部分に、 まんべんな く レーザ光を照射する必 要がある。  When performing hair removal treatment by irradiating the skin with laser light, it is necessary to irradiate the laser light evenly to parts with waste hair such as underarms.
ところが、 脱毛 ト リ ー ト メ ン トに使用する半導体レーザは、 発光部断 面積が数 m〜数十/ mと非常に小さいので、 H e — N e レーザなどの よう に高指向性を持つ平行な細い直線ビームにはな らず、 3 0 ° 〜 4 5 ° の角度でビームの先が大き く広がる。  However, since the semiconductor laser used for hair removal treatment has a very small light emitting section area of several meters to several tens of meters per meter, it has high directivity like a He-Ne laser. The beam does not become a narrow parallel straight beam but spreads widely at an angle of 30 ° to 45 °.
そこで、 パワー密度を狭い範囲に集中させるために集光レ ンズで集光 する。 集光すれば、 焦点付近における ビーム佳は 1 〜 2 m mとかな り細 く なる。  Therefore, the light is focused by a focusing lens to concentrate the power density in a narrow range. When condensed, the beam near the focal point becomes as thin as 1-2 mm.
しかし、 このように細いビーム径では、 わきの下などの広い範囲を レ 一ザ照射するのに、 手間と時間がかかり 、 根気を要する面倒な作業にな o  However, with such a small beam diameter, it takes time and effort to irradiate a large area such as the armpit with a laser, and it takes time and labor to perform.
そこで、 プローブのへヅ ドに多数の半導体レーザを設けて一度に照射 できる面積を拡げ、脱毛 卜 リ 一 トメ ン 卜の効率を向上させるものがある。  Therefore, there is a method in which a large number of semiconductor lasers are provided on the head of the probe to increase the area that can be irradiated at a time, thereby improving the efficiency of hair removal and trimming.
と ころが、 焦点と焦点以外の部分ではエネルギー密度の格差が大きい ため、 隣り合う焦点間の距離が等し く なるように半導体ダイオー ドを配 置しても、 焦点付近では光パワーが集中 し過ぎて正常細胞に光熱反応に よる軽い火傷が起きて、 痛みを感じる。 However, since there is a large difference in energy density between the focal point and the part other than the focal point, semiconductor diodes are arranged so that the distance between adjacent focal points is equal. Even if placed, light power is concentrated too much near the focal point, causing slight burns to the normal cells due to the photothermal reaction, and pain.
このため、 火傷や痛みによる恐怖感ゃ不安感が先にたち、 レーザ光を 長時間照射して皮膚に十分な光熱反応を起こすことができず、 脱毛 ト リ - トメ ン 卜を有効に行う ことが困難になる。  For this reason, fear or anxiety caused by burns or pain comes first, and it is not possible to cause a sufficient photothermal reaction to the skin by irradiating laser light for a long time, and hair removal treatment should be performed effectively. Becomes difficult.
そこで本発明は、 1 または 2以上のレーザ光源のビームを皮膚に照射 して脱毛 ト リ ー ト メ ン トを行う際、 エネルギー密度のむらをな く して皮 膚に均一に作用させる ことによ り、 火傷や痛みを感じる ことのないよう にすることを目的になされたものである。 発明の開示  Accordingly, the present invention provides a hair removal treatment by irradiating the skin with one or two or more laser light beams to uniformly act on the skin by eliminating uneven energy density. It is designed to prevent burns and pain. Disclosure of the invention
かかる目的を達成するために、 本発明は以下のように構成した。 すなわち、 請求項 1 の発明は、 プローブのへッ ド部に透明な誘電体か らできたレーザ透過部を設置して、 その相対する端面の一方を入射端と し、  In order to achieve such an object, the present invention is configured as follows. That is, according to the invention of claim 1, a laser transmitting portion made of a transparent dielectric material is installed at the head portion of the probe, and one of the opposed end surfaces is set as an incident end,
半導体レーザダイ才一 ドの正面に集光レ ンズを配したレーザ光源を前 記入射端の対向面に 1 または複数個配備し、  One or more laser light sources with a focusing lens arranged in front of the semiconductor laser die are provided on the surface facing the incident end, and
入射端とは反対側のレーザ透過部の出射端をへッ ド部よ り露出 して皮 膚に接触できるように したレ一ザ脱毛器である。  This is a laser epilator that exposes the emission end of the laser transmission part opposite to the incidence end from the head so that it can contact the skin.
請求項 2の発明は、 前記レーザ光源を配備する レ一ザ光源取付け面を 凹曲面状に湾曲させて成る請求項 1 記載のレーザ脱毛器である。  The invention according to claim 2 is the laser hair remover according to claim 1, wherein the laser light source mounting surface on which the laser light source is provided is curved in a concave curved shape.
請求項 3の発明は、 前記レーザ透過部を交換可能に設置して成る請求 項 1 記載のレ一ザ脱毛器である。  The invention according to claim 3 is the laser epilator according to claim 1, wherein the laser transmitting portion is installed so as to be exchangeable.
請求項 4の発明は、 前記レーザ透過部に冷却手段を備えて成る請求項 1 記載のレーザ脱毛器である。 図面の簡単な説明 The invention according to claim 4 is the laser epilator according to claim 1, wherein the laser transmitting portion is provided with cooling means. BRIEF DESCRIPTION OF THE FIGURES
第 1 図は、本発明を実施したレーザ脱毛器の正面図である。第 2 図は、 第 1 図の要部を断面で示す側面図である。 第 3図は、 レーザ透過部にお ける光の伝搬経路を示す説明図である。 発明を実施するための最良の形態  FIG. 1 is a front view of a laser hair remover embodying the present invention. FIG. 2 is a side view showing a main part of FIG. 1 in cross section. FIG. 3 is an explanatory diagram showing a light propagation path in a laser transmitting section. BEST MODE FOR CARRYING OUT THE INVENTION
以下に図面を参照して本発明の実施の形態について説明する。  Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第 1 図と第 2図に、 本発明を実施したレーザ脱毛器を示す。  1 and 2 show a laser hair remover embodying the present invention.
レーザ脱毛器は、 パルス的な レーザ光の照射時間比率をタイ マによつ て制御する制御回路と電源 （図示しない） を内蔵する一方、 正面にへッ ド部 1 を有し、 へッ ド部 1 の下方に L E Dラ ンプ 2 と押しスィ ッチ 3 が 設けてある。  The laser epilator has a built-in control circuit and a power supply (not shown) that control the irradiation time ratio of pulsed laser light by a timer, and has a head section 1 on the front and a head section. An LED lamp 2 and a push switch 3 are provided below the unit 1.
へッ ド部 1 の中央に突き出るように、 レーザ透過部と しての光拡散口 ッ ド 1 1 を交換可能に取り付ける。 へッ ド部 1 内のレーザ光源取付け面 4は凹曲面状に湾曲 していて、 その中心から同心円状に通孔を配列 し、 これらの通孔に集光用の球レ ンズ 1 2 を嵌め込む。  Attach the light-diffusing port 11 as a laser-transmitting part so as to protrude to the center of the head part 1 so as to be replaceable. The laser light source mounting surface 4 in the head portion 1 is curved in a concave curved shape, and through holes are arranged concentrically from the center thereof, and a focusing lens 12 is fitted into these through holes. Put in.
光拡散ロ ッ ド 1 1 は、 石英ガラスやプラスチックなどの透明な誘電体 で円柱形に形成する。 そ して、 その相対する両端面のうち、 へッ ド部 1 よ り露出 して皮膚に接触する側を出射端 a と し、 へッ ド部 1 に取り付け る側を入射端 b とする。 この入射端 bを レーザ光源取付け面 4の湾曲面 の中心に位置する ことによ り 、 入射端 b と球レ ンズ 1 2の距離を等し く しかも近く に配置できる。  The light diffusion rod 11 is made of a transparent dielectric material such as quartz glass or plastic and formed in a cylindrical shape. Then, of the opposing end surfaces, the side exposed from the head portion 1 and in contact with the skin is defined as an emission end a, and the side attached to the head portion 1 is defined as an incidence end b. By locating the incident end b at the center of the curved surface of the laser light source mounting surface 4, the distance between the incident end b and the spherical lens 12 can be made equal and close.
光拡散ロ ッ ド 1 1 は、 また、 スぺ一ザと しての役割も果た し、 出射端 aを皮膚に接触させる ことによ り 、 球レ ンズ 1 2 と皮膚面との間の距離 を一定に保つ働きがある。  The light diffusion rod 11 also serves as a stirrer. By bringing the emission end a into contact with the skin, the light diffusion rod 11 can be disposed between the spherical lens 12 and the skin surface. It works to keep the distance constant.
なお、 へッ ド面からエアを皮膚に吹き付けたり 、 ペルチェ素子を取り 付けて光拡散ロ ッ ド 1 1 を冷却すると、 皮膚を冷やして鎮痛する効果が 期待できる。 Air can be blown onto the skin from the head surface or the Peltier element can be removed. When the light diffusion rod 11 is cooled down, the effect of cooling the skin and relieving pain can be expected.
球レンズ 1 2の裏側に円筒状のヒー ト シンク 1 3 を取り付け、 このヒ — 卜 シンク 1 3の基部に半導体レーザダイオー ド 1 4の金属パッケージ を挿入して固定する。 これによ り半導体レーザダイオー ド 1 4の光軸を ヒ一 卜シンク 1 3の軸心に一致させる。 ヒ一 卜シンク 1 3 を レーザ光源 取付け面 4の裏面に対し垂直に取付ければ、 光軸は自然に入射端 bに集 まるよつになる。  A cylindrical heat sink 13 is attached to the back side of the spherical lens 12, and a metal package of the semiconductor laser diode 14 is inserted into the base of the heat sink 13 and fixed. As a result, the optical axis of the semiconductor laser diode 14 coincides with the axis of the heat sink 13. If the heat sink 13 is mounted perpendicular to the back of the laser light source mounting surface 4, the optical axis will naturally converge at the incident end b.
このよう にして、 半導体レーザダイ オー ド 1 4のレーザ光は球レ ンズ 1 2 を透過して集光し、 光拡散ロ ッ ド 1 1 の入射端 bに焦点を結ぶ。 こ の入射端 bに全部の半導体レーザダイオー ド 1 4の焦点が形成され、 そ のレーザ光が光拡散口 ッ ド 1 1 を透過して出射端 aよ り放射する。  In this way, the laser beam of the semiconductor laser diode 14 passes through the spherical lens 12 and is focused, and is focused on the incident end b of the light diffusion rod 11. The focal point of all the semiconductor laser diodes 14 is formed at the incident end b, and the laser light is transmitted through the light diffusing port 11 and emitted from the emitting end a.
へッ ド部 1 に配置する半導体レーザダイオー ド 1 4は、 光パワーが大 きい場合は複数個でな く 1 個でもよい。  If the optical power is large, the number of the semiconductor laser diodes 14 arranged in the head section 1 may be one instead of a plurality.
球レンズ 1 2は、 半導体レーザダイオー ド 1 4のレーザ光を集光して 前方の焦点にビ一厶ウェス 卜を形成するが、 焦点距離が通常のレンズよ り短いので、 焦点深度もわずかで狭い範囲に光パワーを絞り込むことが できる。 また、 焦点を過ぎた位置からは逆に同 じ角度で広がり 、 広い範 囲に光パワーが分散する。 焦点の位置は厳密に光拡散ロ ッ ド 1 1 の入射 端 bである必要はな く 、 おおよそ入射端 b付近に形成されればよい。  The spherical lens 12 converges the laser beam from the semiconductor laser diode 14 to form a beam waist at the front focal point. However, since the focal length is shorter than that of a normal lens, the focal depth is small. Optical power can be narrowed down to a narrow range. Conversely, from the position beyond the focal point, the light spreads at the same angle and the optical power is dispersed over a wide range. The position of the focal point does not need to be exactly at the incident end b of the light diffusion rod 11, but may be formed approximately near the incident end b.
ヒー 卜 シンク 1 3は、 半導体レーザダイオー ド 1 4の動作時の発熱を 熱伝導によって拡散する ことによ り 、 半導体レーザダイオー ドに不可避 の熱による出力低下を抑制できる。 この観点から、 ヒ一 卜 シンク 1 3は 熱伝導効率のよいアルミあるいはその合金で錶造し、 ダミーの通孔をい く つか設けて放熱効率を高めるとよい。  The heat sink 13 diffuses heat generated during operation of the semiconductor laser diode 14 by heat conduction, thereby suppressing a decrease in output due to heat inevitable in the semiconductor laser diode. From this viewpoint, the heat sink 13 is preferably made of aluminum or an alloy thereof having high heat conduction efficiency, and is provided with several dummy through holes to enhance the heat radiation efficiency.
半導体レ—ザダイオー ド 1 4は、 G a A s (ガリ ウムァルセナイ ド） などの化合物半導体を用いた P N接合ダイォ一 ドに直接電流を流して励 起することによ り レーザ発振する。 このレーザ光は、 ピーク波長 6 0 0 〜 1 6 0 0 n m、 光出力 5 m W〜 3 Wで、 熱効率が良 〈 皮膚に十分な光 熱反応を起こす性質がある。 The semiconductor laser diode 14 is GaAs (gallium arsenide). Laser oscillation occurs when a current is directly applied to a PN junction diode using a compound semiconductor such as a semiconductor to excite it. This laser beam has a peak wavelength of 600 to 160 nm, an optical output of 5 mW to 3 W, and has good thermal efficiency. It has the property of causing a sufficient photothermal reaction to the skin.
さ らに、 熱反応のほか、 光電気反応、 光磁気反応、 光力学反応、 光化 学反応、 光免疫反応、 光酵素反応などがあ り 、 光生物学的活性化によ り 生体組織の新陳代謝を促して皮膚血行を高め、 水分や血液に吸収されに < いため、 優れた皮膚深達性を持つ。  Furthermore, in addition to thermal reactions, there are photoelectric reactions, magneto-optical reactions, photodynamic reactions, photochemical reactions, photoimmune reactions, photoenzymatic reactions, and the like. It promotes metabolism and enhances skin blood circulation, and has excellent skin penetration because it is hardly absorbed by water and blood.
押 しスィ ツチ 3 は、 1 つのスィ ツチを操作して電源のオン · オフ と照 射時間の設定を行う。 ここではレ一ザ光がパルス的に点灯と休止を繰り 返す。 点灯時間は可変で、 休止時間は固定 （例えば 1 秒） である。 この 点灯時間をタ イマによ り制御して、 全通電期間のレーザ光の照射時間比 率を調整する。  The push switch 3 operates one switch to turn on / off the power and set the irradiation time. Here, the laser light repeatedly turns on and off in a pulsed manner. The lighting time is variable and the pause time is fixed (for example, 1 second). The lighting time is controlled by a timer to adjust the laser light irradiation time ratio during the entire energization period.
始めに押 しスィ ツチ 3 を押すと、 電源がオンとな り 、 照射時間 1 秒が 設定される。 このとき L E Dラ ンプ 2 が緑色点灯する。 このとき半導体 レーザダイ才一 ドは 1 秒点灯し 1 秒休止するサイ クルを繰り返す。  Pressing switch 3 first turns on the power and sets the irradiation time to 1 second. At this time, LED lamp 2 lights green. At this time, the semiconductor laser die repeats a cycle of lighting for 1 second and pausing for 1 second.
次に押 しスィ ッチ 3 を押すと、 照射時間 2秒が設定され、 し E Dラ ン プ 2 が緑色点滅する。 このとき半導体レーザダイ 才一 ドは 2秒点灯し 1 秒休止するサイ クルを繰り返す。  Next, when push switch 3 is pressed, the irradiation time of 2 seconds is set, and then the LED lamp 2 blinks green. At this time, the semiconductor laser diode repeats a cycle of turning on for 2 seconds and pausing for 1 second.
さ らに押 しスィ ッチ 3 を押してい 〈 と、 照射時間 3〜 6秒が順次設定 され、 L E Dランプ 2 が設定秒数に応じて橙色点灯、 橙色点滅、 赤色点 灯、 赤色点滅に切換わる。 これらの点灯状態で照射時間が識別できる。 最後に押 しスィ ッチ 3 をロ ングオン （ 1 . 5秒） すると、 電源がオフ になる。  Press switch 3 again, and then <and the irradiation time 3 to 6 seconds will be set in sequence, and LED lamp 2 will switch to orange light, orange light, red light, and red light according to the set number of seconds. Be replaced. The irradiation time can be identified by these lighting states. Finally, push switch 3 long (1.5 seconds) to turn off the power.
照射時間の設定は、 皮膚に一過性のダメージを与えないために、 この ようにタイ マにご く短い 1 〜 6秒のカ ウ ン 卜値を設定する。 本発明のレーザ脱毛器は以上のような構成で、 卜 リ 一 トメ ン 卜を行う ときは、 まず、 押しスィ ッチ 3 を押して電源をオンにする。 The irradiation time should be set to a very short count of 1 to 6 seconds in this way so as not to cause transient damage to the skin. The laser hair remover of the present invention has the above-described configuration. When performing trimming, first, the push switch 3 is pressed to turn on the power.
電源をオンにすると、 半導体レーザダイオー ド 1 4 が既定の時間点灯 し、 その後 1 秒間休止する。 以後この点灯と休止を繰り返す。  When the power is turned on, the semiconductor laser diode 14 lights up for a predetermined time and then pauses for 1 second. Thereafter, the lighting and the pause are repeated.
照射時間を変更する場合は、 前記のとおり 、 押しスィ ッチ 3 を押しな がら 1 〜 6秒の範囲で所望の時間を設定する。  When changing the irradiation time, the desired time is set in the range of 1 to 6 seconds while pressing the push switch 3 as described above.
半導体レーザダイ オー ド 1 4 が点灯中、 光拡散ロ ッ ド 1 1 の出射端 a を 卜 リ 一 トメ ン 卜すべき皮膚面に押し当て、 レーザ光を照射する。  While the semiconductor laser diode 14 is on, the emission end a of the light diffusion rod 11 is pressed against the skin surface to be trimmed, and the laser beam is irradiated.
レ一ザ光が休止している時間を選んで出射端 aの位置を移動し、 皮膚 の広い範囲を次々 と ト リ 一 卜メ ン 卜する。  Select the time when the laser light is at rest, move the position of the emission end a, and trim the wide area of the skin one after another.
半導体レーザダイオー ド 1 4 が点灯すると、 第 3図に示すように、 球 レ ンズ 1 2で集光したレーザ光が光拡散ロッ ド 1 1 の入射端 bに入射す る。 一部のレーザ光は光拡散ロ ッ ド 1 1 の軸に沿って直進するが、 残り の大半は光拡散ロ ッ ド 1 1 の内周面で全反射しながら誘電体経路を伝搬 し、 光拡散口 ッ ド 1 1 の出射端 aから放射する。  When the semiconductor laser diode 14 is turned on, as shown in FIG. 3, the laser beam condensed by the spherical lens 12 is incident on the incident end b of the light diffusion rod 11. Some laser light travels straight along the axis of the light diffusion rod 11, but most of the rest propagates along the dielectric path while being totally reflected by the inner peripheral surface of the light diffusion rod 11, Radiates from the exit end a of the diffusion pad 11.
このように、 光拡散ロ ッ ド 1 1 を伝播する レーザ光の経路は多様で、 出射端 aでは、 その全面積に亘つてほぼ平均的にレ一ザ光が拡散する。 このため出射端 aにおける レーザ光のエネルギー密度は、 場所的にむら な 〈 平均化され、 しかも密度が高いため、 出射端 aに接触する皮膚に対 し深〈均一に作用する。  As described above, the path of the laser light propagating through the light diffusion rod 11 is diverse, and at the emission end a, the laser light is diffused almost evenly over the entire area. For this reason, the energy density of the laser beam at the emission end a is uneven <averaging in place, and since the energy density is high, it acts on the skin in contact with the emission end a at a depth <uniform.
光拡散ロ ッ ド 1 1 は交換可能で、 レーザ光を狭い範囲に高密度に照射 するときは径の細いものを使用 し、 レーザ光を広い範囲に疎密度に照射 するときは径の太いものに交換する。 産業上の利用可能性  The light diffusion rod 11 is replaceable.Use a small diameter when irradiating laser light to a narrow area with high density, and use a large diameter when irradiating laser light to a wide area with low density. Replace with Industrial applicability
以上説明したように本発明のレーザ脱毛器は、 プローブのへッ ド部に 設置した透明な誘電体よ り成る レーザ透過部を介して、 多数の半導体レ —ザダイ才一 ドのレ一ザ光を照射する。 As described above, the laser epilator of the present invention is provided at the head of the probe. A large number of semiconductor laser die laser beams are radiated through the laser transmission part made of a transparent dielectric.
従って、 本発明によれば、 レーザ光の光パワーがレーザ透過部で拡散 してエネルギー密度が均一化するので、 従来のように複数の焦点に光パ ヮ一が集中して皮膚を火傷した り、 痛みを感じさせるようなことがな く なる。  Therefore, according to the present invention, since the optical power of the laser beam is diffused in the laser transmitting portion and the energy density is made uniform, the light beam is concentrated on a plurality of focal points as in the related art, and the skin is burned. The pain will not be felt.
また、 レーザ透過部を皮膚に当てて ト リ ー ト メ ン トするので、 操作が 楽にな り、 照射部分の見極めも し易く なる。  In addition, since the laser transmission part is brought into contact with the skin for treatment, the operation is easy and the irradiated part can be easily identified.
また、 レーザ透過部がレーザ光源と皮膚との間の距離を一定に保つの で、安全性が高ま り 、レーザ透過部が皮膚を冷して鎮痛する効果もある。  In addition, since the laser transmitting portion keeps the distance between the laser light source and the skin constant, the safety is enhanced, and the laser transmitting portion also has an effect of cooling the skin and relieving pain.

Claims

請求の範囲 The scope of the claims
1 . プローブのへッ ド部に透明な誘電体よ り成る レーザ透過部を設置 して、 その相対する端面の一方を入射端と し、 1. A laser transmission part made of a transparent dielectric is installed on the head of the probe, and one of the opposite end faces is used as the incident end.
半導体レーザダイ才ー ドの正面に集光レンズを配したレーザ光源を前 記入射端の対向面に 1 個または複数個配備し、  One or more laser light sources with a condensing lens arranged in front of the semiconductor laser diode are provided on the surface facing the incident end, and
入射端に相対する レーザ透過部の出射端をへッ ド部よ り露出 して皮膚 に接触できるようにして成る レーザ脱毛器。  A laser epilator that exposes the emission end of the laser transmitting part, facing the incident end, from the head so that it can contact the skin.
2 . 前記入射端に対向する レ一ザ光源取付け面を凹曲面状に湾曲させ て成る請求項 1 記載のレーザ脱毛器。  2. The laser epilator according to claim 1, wherein the laser light source mounting surface facing the incident end is curved into a concave curved shape.
3 . 前記レ一ザ透過部を交換可能に設置して成る請求項 1 または 2記 載のレーザ脱毛器。  3. The laser epilator according to claim 1 or 2, wherein the laser transmitting portion is exchangeably installed.
4 . 前記レーザ透過部に冷却手段を備えて成る請求項 1 または 2記載 のレーザ脱毛器。  4. The laser hair remover according to claim 1 or 2, further comprising cooling means in the laser transmitting portion.
PCT/JP2000/009103 1999-12-21 2000-12-21 Laser hair-remover WO2001045795A1 (en)

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